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CN105629545A - 触摸面板以及其制造方法 - Google Patents

触摸面板以及其制造方法 Download PDF

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Publication number
CN105629545A
CN105629545A CN201610033720.7A CN201610033720A CN105629545A CN 105629545 A CN105629545 A CN 105629545A CN 201610033720 A CN201610033720 A CN 201610033720A CN 105629545 A CN105629545 A CN 105629545A
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Prior art keywords
touch
layer
control
electrode layer
electrode
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Inventor
郝思坤
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201610033720.7A priority Critical patent/CN105629545A/zh
Priority to PCT/CN2016/074506 priority patent/WO2017124604A1/zh
Priority to US15/029,256 priority patent/US20180059830A1/en
Publication of CN105629545A publication Critical patent/CN105629545A/zh
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    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

本发明公开一种种触摸面板,其包括:基板;第一金属层,位于所述基板上,用来形成薄膜晶体管的栅极;栅级绝缘层,位于所述第一金属层上;第二金属层,位于所述栅级绝缘层上,用来形成触控控制线、所述薄膜晶体管的源极和漏极,所述触控控制线用于传送触控信号以及公共电压;隔离层,位于所述第二金属层上,并设置贯穿所述隔离层的第一通孔和第二通孔,所述第一通孔对准所述源极或漏极,所述第二通孔对准所述触控控制线;像素电极层,通过所述第一通孔与所述源极或漏极连接;触控电极层,通过所述第二通孔与所述触控控制线连接。所述触控电极层同时作为公共电极层。

Description

触摸面板以及其制造方法
【技术领域】
本发明涉及电容式感应技术领域,特别是涉及使用电容式感应组件的触摸面板以及其制造方法。
【背景技术】
液晶显示器具有低功耗、低闪烁度、画面色彩逼真等优点,被广泛应用于移动电话、相机、计算机屏幕、电视机等电子产品中,为目前主流的显示器。
触摸屏具有坚固耐用、反应速度快、节省空间、易于交流等优点,利用触控技术,用户只需要用手指轻碰触摸屏幕上的图形符号或文字即可实现对主机的操作,从而使得人机交互更为直截了当,极大方便对电脑操作不熟悉的用户。
目前,许多电子设备的屏幕都是将液晶显示技术和触控技术相结合,不仅具有液晶显示器的优点,同时实现触控操作,备受消费者欢迎。然而,现有的具有触摸功能的液晶显示器中,受液晶显示器本身结构的影响,用于实现触摸功能的触控电极通常是位于液晶显示面板的像素电极之下,如此一来容易导致触控电极难以感测用户的触摸操作,降低了触控的灵敏度。
此外,传统的电容式感应组件是把透明的第一导电线路和第二导电线路做成横竖交叠的类似菱形的形状,第一导电线路和第二导电线路分别与沿横向排列的驱动线和沿纵向排列的感测线连接。驱动线和感测线在彼此交叉的位置会产生寄生电容,因此会影响像素的开口率。另外,大量的驱动线设置在面板主动区(Activearea)的一侧会增加显示器的边框宽度,因此不利于窄边框的显示器。
【发明内容】
因此,本发明的目的是提供一种内嵌式触摸面板,将自容式触控面板和水平切换式(Inplaneswitching,IPS)面板整合在一起,以解决上述技术问题。
本发明提供一种触摸面板,其包括:基板;第一金属层,位于所述基板上,用来形成薄膜晶体管的栅极;栅级绝缘层,位于所述第一金属层上;第二金属层,位于所述栅级绝缘层上,用来形成触控控制线、所述薄膜晶体管的源极和漏极,所述触控控制线用于传送触控信号以及公共电压;隔离层,位于所述第二金属层上,并设置贯穿所述隔离层的第一通孔和第二通孔,所述第一通孔对准所述源极或漏极,所述第二通孔对准所述触控控制线;像素电极层,通过所述第一通孔与所述源极或漏极连接;触控电极层,通过所述第二通孔与所述触控控制线连接。所述触控电极层同时作为公共电极层。
依据本发明的实施例,所述像素电极层和所述触控电极层是由一导电层同时所形成。
依据本发明的实施例,所述导电层是氧化铟锡或是金属构成。
依据本发明的实施例,所述第二金属层还包括数据线,所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层。
依据本发明的实施例,当所述触控控制线传送所述公共电压至所述触控电极层时,所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层。
依据本发明的实施例,当所述触控控制线传送所述触控信号至所述触控电极层时,所述数据线停止通过所述薄膜晶体管传递数据电压至所述像素电极层。
本发明还提供一种制造触摸面板的方法,其包括:形成第一金属层于基板上;蚀刻所述第一金属层以形成薄膜晶体管的栅极;形成栅级绝缘层于所述薄膜晶体管的栅极上;形成第二金属层于所述栅级绝缘层上;蚀刻所述第二金属层以形成触控控制线、所述薄膜晶体管的源极和漏极;形成隔离层于所述触控控制线、所述薄膜晶体管的源极和漏极之上;蚀刻所述隔离层以形成贯穿所述隔离层的第一通孔和第二通孔,所述第一通孔对准所述源极或漏极,所述第二通孔对准所述触控控制线;沉积导电层于所述隔离层、所述触控控制线、所述源极或漏极上;蚀刻所述导电层以形成像素电极层和触控电极层,所述像素电极层通过所述第一通孔与所述源极或漏极连接,所述触控电极层通过所述第二通孔与所述触控控制线连接;其中,所述触控电极层同时作为所述阵列基板的公共电极层。
依据本发明的实施例,所述导电层是氧化铟锡或是金属构成。
依据本发明的实施例,蚀刻所述第二金属层以形成触控控制线、所述薄膜晶体管的源极和漏极的步骤包含:蚀刻所述第二金属层以形成数据线,所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层。
依据本发明的实施例,在形成所述第二金属层于所述栅级绝缘层上的步骤之前,所述方法另包含:形成非晶硅层于所述栅级绝缘层上;及蚀刻所述非晶硅层以形成所述薄膜晶体管的半导体层。
相较于现有技术,本发明的触摸面板的阵列基板的触控控制线可以传输公共电压和触控信号,因此不需额外增设驱动信号线来传输触控信号。所以可以避免现有技术的触控面板因设置驱动信号线而增加边框宽度的问题。另外,由于触控控制线、薄膜晶体管的源/漏极和数据线皆利用第二金属层完成,因此简化制程和减少成本,并有效减少因额外设置驱动信号线而产生寄生电容的问题。此外,触控电极层是由氧化铟锡或是金属构成,可以增加触控灵敏度。
为让本发明的上述内容能更明显易懂,下文特举较佳实施例,并配合所附图式,作详细说明如下:
【附图说明】
图1是本发明实施例的显示设备的示意图。
图2绘示本发明实施例显示设备的触控区的触控电容的分布示意图。
图3是本发明第一实施例的触摸面板的剖面图。
图4-图9绘示制造图3的触摸面板的阵列基板的示意图。
【具体实施方式】
以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施之特定实施例。本发明所提到的方向用语,例如“上”、“下”、“前”、“后”、“左”、“右”、“顶”、“底”、“水平”、“垂直”等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。
请参阅图1和图2,图1是本发明实施例的显示设备10的示意图,图2绘示本发明实施例显示设备10的触控区50的触控电容的分布示意图。显示设备10包含触摸面板100,其为具有触控功能的液晶显示面板。触摸面板100包含显示区30以及触控区50。显示区30用来显示影像,触控区50用来侦测手指接触面板的位置。显示设备10包含栅极驱动器12、时序控制器14以及源极驱动器(sourcedriver)16。显示区30设置数个呈矩阵排列的像素(pixel),而每一个像素包含三个分别代表红绿蓝(RGB)三原色的像素单元20构成。栅极驱动器12每隔一固定间隔输出扫描信号使得每一行的晶体管22依序开启,同时源极驱动器16则输出对应的数据信号至一整列的像素单元20使其充电到各自所需的电压,使得像素单元20依据数据信号和公共电压Vcom的压差以显示不同的灰阶。当同一行充电完毕后,栅极驱动器12便将该行的扫描信号关闭,然后栅极驱动器12再输出扫描信号将下一行的晶体管22打开,再由源极驱动器16对下一行的像素单元20进行充放电。如此依序下去,直到所有像素单元20都充电完成,再从第一行开始充电。
参阅图2。触控区50是由触控电极层52和触控控制线53组成。触控电极层52包括多个相互绝缘的自电容式触控电极521。多个自电容式触控电极521呈阵列分布。每个自电容式触控电极521的形状还可以是圆形、三角形或其他形状。
每个自电容式触控电极521与相应的一条触控控制线53连接,触控控制线53连接至控制器14,以将自电容式触控电极521所感应到的触控信号传输至控制器14。多个自电容式触控电极521实现触控的原理是:当人体未触碰屏幕时,各自电容式触控电极521所感知的电容为一固定值,当人体触碰屏幕,例如手指在屏幕上操作时,手指触碰屏幕的位置所对应的自电容式触控电极感知的电容受人体的影响而发生变化,由此通过检测各自容式触控电极521的电容值变化即可判断出手指触摸的位置,从而实现触控功能。
请参阅图3,图3是本发明第一实施例的触摸面板100的剖面图。触摸面板100包括阵列基板200、彩膜基板202和液晶层204。阵列基板200用来设置数个像素电极层112、薄膜晶体管22以及触控电极层52。阵列基板200包括玻璃基板102、第一金属层104、栅级绝缘层106、第二金属层108、隔离层110、像素电极层112及触控电极层52。第一金属层104位于基板102上,用来形成薄膜晶体管22的栅极22g。栅级绝缘层106位于第一金属层104上。第二金属层108位于栅级绝缘层106上,用来形成触控控制线53、数据线114、薄膜晶体管22的源极22s和漏极22d。触控控制线53用于传送由控制器14产生的触控信号以及公共电压Vcom。隔离层110位于第二金属层108上,并设置贯穿隔离层110的第一通孔141和第二通孔142,第一通孔141对准源极22s或漏极22d,第二通孔142对准触控控制线53。像素电极层112通过第一通孔141与源极22s或漏极22d连接。触控电极层52通过第二通孔142与触控控制线53连接。触控电极层52与像素电极层112是由一导电层同时所形成。
本实施例中,触控电极层52同时作为公共电极层。一方面,当控制器14通过触控控制线53传送公共电压至触控电极层52时,源极驱动器16会通过数据线114和薄膜晶体管22传递数据电压至像素电极层112。此时施加于像素电极层112的数据电压和施加于触控电极层52的公共电压差会导致像素电极层112和触控电极层52之间的液晶层204的液晶分子转动,因而呈现不同的灰阶。另一方面,当控制器14通过触控控制线53传送触控信号至触控电极层52时,数据线114停止传递数据电压至像素电极层112。此时,当触控电极层52的触控电极521会将所感应到的触控信号传输至控制器54,像素电极层112和触控电极层52之间的液晶分子仍会保持之前的转动状态。也就是说,本实施例的触控电极层52在显示影像阶段时,会做为公共电极以接收公共电压;在触控侦测阶段时,会做为触控电极以传输触控信号。
本实施例的彩膜基板202包括彩色滤光层116、黑色矩阵层118和玻璃基板120。彩色滤光层116用来滤出不同颜色的光线。黑色矩阵层118用来遮挡漏光。间隙子206用来维持阵列基板200和彩膜基板202之间的间隔,以收容液晶层204。触控控制线53位于彩膜基板202上的黑色矩阵层118在阵列基板200上的垂直投影区域内,以减小触控控制线53对开口率的影响。
请参阅图4-图9,图4-图9绘示制造图3的触摸面板100的阵列基板200的示意图。如图4所示,首先提供一个玻璃基板102,接着进行一金属薄膜沉积制程,以于玻璃基板102表面形成第一金属层(未显示),并利用第一掩膜来进行第一微影蚀刻,以蚀刻得到薄膜晶体管22的栅极22g以及扫描线(未图示)。虽然图4并未标示出扫描线,但本领域的技术人员可以了解栅极22g实质上是扫描线的一部分。
请参阅图5,接着沉积以氮化硅(SiNx)为材质的栅级绝缘层106而覆盖栅极22g。
请参阅图6,于栅级绝缘层106上沉积非晶硅(a-Si,AmorphousSi)层于栅极22g上方。接着利用第二掩膜以蚀刻非晶硅层以构成半导体层22c。半导体层22c作为薄膜晶体管22的通道。
请参阅图7,于栅级绝缘层106上沉积第二金属层(未图示),并利用第三掩膜进行微影蚀刻,蚀刻该第二金属层以形成薄膜晶体管22的源极22s、漏极22d、触控控制线53以及数据线114。数据线114是直接连接到源极22s,本领域的技术人员可以了解源极22s实质上是数据线114的一部分。此外,源极22s和漏极22d的位置也可以对调。
请参阅图8,接着沉积以可溶性聚四氟乙烯(Polyfluoroalkoxy,PFA)为材质的隔离层110,并覆盖源极22s及漏极22d、数据线114和触控控制线53,再利用第四掩膜蚀刻隔离层110,用以去除漏极22d上方以及触控控制线53上方的部份隔离层110,直至漏极22d和触控控制线53表面,以于漏极22d上方形第一通孔141,于触控控制线53上方形成第二通孔142。也就是说,第一通孔141对准漏极22d,第二通孔142对准触控控制线53。
请参阅图9,在隔离层110上形成以氧化铟锡物(Indiumtinoxide,ITO)或石墨烯或金属为材质的导电层(未图示),接着利用第五掩膜蚀刻该导电层以同时形成像素电极层112和触控电极层52。像素电极层112通过预先形成的第一通孔141与薄膜晶体管22的漏极22d电性连接。触控电极层52通过预先形成的第二通孔142与触控控制线53连接。像素电极层112构成数个像素电极,触控电极层52构成数个触控电极,数个像素电极和数个触控电极交替形成于隔离层110上。
至此,本实施例的阵列基板200已完成。之后在将彩膜基板202和液晶层204组合后,便可以形成本实施例的触摸面板100。
在其他实施方式中,触摸面板100还可以是具有触控功能的有机发光二极管(OLED)显示面板或其他显示面板。
相较于现有技术,本发明的触摸面板的阵列基板的触控控制线可以传输公共电压和触控信号,因此不需额外增设驱动信号线来传输触控信号。所以可以避免现有技术的触控面板因设置驱动信号线而增加边框宽度的问题。另外,由于触控控制线、薄膜晶体管的源/漏极和数据线皆利用第二金属层完成,因此简化制程和减少成本,并有效减少因额外设置驱动信号线而产生寄生电容的问题。此外,触控电极层是由氧化铟锡或是金属构成,可以增加触控灵敏度。
综上所述,虽然本发明已以较佳实施例揭露如上,但该较佳实施例并非用以限制本发明,该领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种触摸面板,其包括:
基板;
第一金属层,位于所述基板上,用来形成薄膜晶体管的栅极;
栅级绝缘层,位于所述第一金属层上;
其特征在于,所述阵列基板另包含:
第二金属层,位于所述栅级绝缘层上,用来形成触控控制线、所述薄膜晶体管的源极和漏极,所述触控控制线用于传送触控信号以及公共电压;
隔离层,位于所述第二金属层上,并设置贯穿所述隔离层的第一通孔和第二通孔,所述第一通孔对准所述源极或漏极,所述第二通孔对准所述触控控制线;
像素电极层,通过所述第一通孔与所述源极或漏极连接;
触控电极层,通过所述第二通孔与所述触控控制线连接,
其中,所述触控电极层同时作为公共电极层。
2.根据权利要求1所述的触摸面板,其特征在于,所述像素电极层和所述触控电极层是由一导电层同时所形成。
3.根据权利要求2所述的触摸面板,其特征在于,所述导电层是氧化铟锡或是金属构成。
4.根据权利要求1所述的触摸面板,其特征在于,所述第二金属层还包括数据线,所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层。
5.根据权利要求4所述的触摸面板,其特征在于,当所述触控控制线传送所述公共电压至所述触控电极层时,所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层。
6.根据权利要求4所述的触摸面板,其特征在于,当所述触控控制线传送所述触控信号至所述触控电极层时,所述数据线停止通过所述薄膜晶体管传递数据电压至所述像素电极层。
7.一种制造触摸面板的方法,其包括:
形成第一金属层于基板上;
蚀刻所述第一金属层以形成薄膜晶体管的栅极;
形成栅级绝缘层于所述薄膜晶体管的栅极上;
形成第二金属层于所述栅级绝缘层上;
蚀刻所述第二金属层以形成触控控制线、所述薄膜晶体管的源极和漏极;
形成隔离层于所述触控控制线、所述薄膜晶体管的源极和漏极之上;
蚀刻所述隔离层以形成贯穿所述隔离层的第一通孔和第二通孔,所述第一通孔对准所述源极或漏极,所述第二通孔对准所述触控控制线;
沉积导电层于所述隔离层、所述触控控制线、所述源极或漏极上;以及
蚀刻所述导电层以形成像素电极层和触控电极层,所述像素电极层通过所述第一通孔与所述源极或漏极连接,所述触控电极层通过所述第二通孔与所述触控控制线连接,其中,所述触控电极层同时作为所述阵列基板的公共电极层。
8.根据权利要求7所述的方法,其特征在于,所述导电层是氧化铟锡或是金属构成。
9.根据权利要求7所述的方法,其特征在于,蚀刻所述第二金属层以形成触控控制线、所述薄膜晶体管的源极和漏极的步骤包含:蚀刻所述第二金属层以形成数据线,所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层。
10.根据权利要求9所述的方法,其特征在于,在形成所述第二金属层于所述栅级绝缘层上的步骤之前,所述方法另包含:
形成非晶硅层于所述栅级绝缘层上;及
蚀刻所述非晶硅层以形成所述薄膜晶体管的半导体层。
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WO2018040478A1 (zh) * 2016-08-31 2018-03-08 深圳市华星光电技术有限公司 一种触控面板及其制作方法
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