CN105621353B - A kind of large-area nano graphic method based on multi-layered anode alumina formwork - Google Patents

Abstract

The invention discloses a large-area nano-patterning method based on a multi-layer anodic aluminum oxide template. Firstly, the multi-layer double-pass AAO template is stacked together and transferred to the target substrate; and then the multi-layer AAO template is covered. The materials required for the preparation of nanostructures are evaporated on the surface of the substrate; then the multi-layer AAO template is removed to obtain a patterned nanostructure array. The method of the present invention can be through the selection of different types of double-pass AAO templates, by controlling the structure, relative position, pore/wall size, relative displacement, and relative rotation angle of the upper and lower AAO porous membranes of the upper and lower layers of AAO, or by adjusting multiple Layer double-pass AAO templates are stacked in such a way that different large-area (square centimeter-scale) structures are very rich in nanostructures with complex patterns of nanoscale dimensions. Moreover, the method has simple preparation conditions, low cost, does not require complex equipment, is easy to operate, and is suitable for large-scale industrial applications.

Description

A method for large-area nanopatterning based on multilayer anodized aluminum templates

technical field

The invention belongs to the technical field of nanometer material preparation. More specifically, it relates to a method for large-area nanopatterning based on multilayer anodized aluminum templates.

Background technique

Patterning technology is an important part of micro-nano processing. In the existing patterning method, the equipment required by photolithography technology is extremely expensive, and is limited by the wavelength of light, and its resolution is difficult to achieve patterning with a feature size below 100nm. E-beam etching and ion beam etching are also very expensive to achieve 10nm feature size. Although the equipment requirements of nanoimprint technology have been reduced, the production of its 10nm-level mother board is also very expensive, and as the feature size decreases, the demolding process becomes more and more difficult.

Single-layer porous anodized aluminum oxide (AAO) is commonly used in various deposition masks, and can prepare hemispherical/columnar hexagonal arrays with a characteristic size of about 20nm; its production cost is low, and it is easy to achieve large-area preparation. However, the pattern produced is too simple, and only hemispherical/columnar hexagonal arrays can be prepared; at the same time, its feature size is limited by the wall thickness of the porous membrane (about 20nm), and thinner walls will reduce the strength of the template to be inoperable.

Contents of the invention

The technical problem to be solved by the present invention is to provide a micro-nano patterning method for the problem that the photolithography, EBL, FIB and other nano-patterning methods in the prior art are difficult to separate from the expensive investment in ultra-clean rooms and complex equipment. It provides a method for preparing and regulating double-layer AAO templates and its application in large-area nano-patterning. This method is a low-cost large-area nanopatterning method that does not require clean room equipment. By stacking double-layer AAO porous membranes and adjusting the displacement and angle between the membranes, the nanostructure shape and size, The gap size, symmetry and period are adjustable; the minimum gap size can be 1nm, which is a new technology with easy operation and strong scalability, so it is very promising.

The purpose of the present invention is to provide a large-area nanopatterning method based on a double-layer anodized aluminum template.

Another object of the present invention is to provide the application of the large-area nanopatterning method based on the multi-layer anodized aluminum template in the preparation of nanomaterials and nanostructures.

Another object of the present invention is to provide nanomaterials or nanostructures prepared according to the above method.

The above object of the present invention is achieved through the following technical solutions:

A method for large-area nanopatterning based on a multilayer anodized aluminum template, comprising the steps of:

S1. Stack the multi-layer double-pass AAO templates and transfer them to the target substrate;

S2. Evaporating materials required for preparing nanostructures on the surface of the substrate covered with multi-layer AAO templates;

S3. Removing the multi-layer AAO template to obtain a patterned nanostructure array.

By selecting different types of double-pass AAO templates, by controlling the structure and relative position of the upper and lower layers of AAO, or by adjusting the stacking method of multi-layer double-pass AAO templates, different complex and rich patterned nanostructures can be obtained. structure.

For example, when the double-pass AAO template used is an AAO template with long-range ordered holes, the patterned structure finally obtained on the substrate is obtained by independently adjusting the size, period, and template thickness of the upper and lower AAO holes, etc. Structural parameters, and adjusting the relative position of the upper and lower layer AAO to achieve. The control method of the relative position includes controlling the relative rotation angle and relative displacement of the two layers of AAO. Complex patterns similar to kaleidoscopes can be obtained in this simple way.

When the double-pass AAO template used is an AAO template with a long-range order of pores or an AAO template with a short-range order of pores, the distribution density can be obtained on the substrate surface by controlling the thickness of the hole wall of the upper AAO template to be about 10 nm. Extremely high nanostructures with gaps smaller than 10nm, and a large fraction with gaps smaller than 5nm.

As a preferred embodiment, the multi-layer in step S1 is two layers. specifically is:

S1. Stack two layers of double-pass AAO templates together and transfer them to the target substrate;

S2. Evaporating materials required for preparing nanostructures on the substrate surface covered with two layers of AAO templates;

S3. The two layers of AAO templates are removed to obtain a patterned nanostructure array.

Wherein, the preparation method of the AAO template may be a traditional two-step oxidation method or a nanoimprint-assisted one-step oxidation method.

In addition, since the AAO template is very thin, in order to improve the success rate of transfer, a layer of organic polymer material support layer can be coated on the surface of the AAO template as a support. The typical polymer material is polymethyl methacrylate. Two layers of AAO thin films with supporting layers are stacked together and placed on the substrate, and then the polymer supporting layer is removed to obtain a double-layer AAO template that is close to the surface of the substrate. The methods for removing the polymer support layer are mainly organic solvent dissolution method and thermal decomposition method. For example, when polymethyl methacrylate is used, it can be placed in a nitrogen protective atmosphere and kept at 400° C. for 10 minutes. Here, the diameters, arrangements, periods, and template thicknesses of the holes of the two layers of AAO templates may be the same or different.

Preferably, the transfer method described in step S1 is: coating a layer of organic polymer material support layer on the surface of the AAO template as a support, cutting and stacking the ultra-thin double-pass AAO template with the organic polymer material support layer , placed on the target substrate; then the organic polymer support layer is removed by organic solvent or heating in an inert atmosphere, leaving multiple layers of AAO tightly attached to the substrate surface.

Preferably, the support layer of organic polymer material is polymethyl methacrylate or polystyrene; the organic solvent is at least one of acetone, methylene chloride or chloroform.

Preferably, the support layer of the organic polymer material is polymethyl methacrylate, and the method for removing the support layer of the organic polymer material is heating to 400-1000° C. in a nitrogen atmosphere and keeping the temperature for 10-60 minutes.

More preferably, the method for removing the support layer of the organic polymer material is heating to 400° C. for 10 minutes in a nitrogen atmosphere.

Preferably, the substrate in step S1 is ordinary glass, ITO glass, FTO glass, quartz glass, silicon, sapphire, silicon carbide or gallium nitride.

Preferably, the evaporation method in step S2 is electron beam evaporation, vacuum thermal evaporation or magnetron sputtering.

Preferably, the required material in step S2 may be metal. However, it is not limited to metal materials, and may also be compound semiconductor or insulator materials.

Preferably, the thickness of the AAO template in step S1 is 50-1000 nm; the diameter, arrangement, period and template thickness of the pores of the multi-layer AAO template can be the same or different.

In addition, as a preferred embodiment, the AAO used in the lower layer can be replaced by other porous templates, such as organic porous membranes.

In addition, for the control of the relative rotation angle and relative position translation of the upper and lower layers of AAO, long-range ordered AAO can be prepared first, and then two layers can be stacked at will to prepare a patterned nanomaterial array and then classified and selected. When the metal nanoarray is prepared by the double-layer AAO method, as mentioned above, if the wall thickness of the upper layer AAO is about 10nm, a gap smaller than 10nm can be obtained. If the gap smaller than 10nm is not required, the wall thickness of the upper layer AAO can be thicker.

The nanostructures prepared according to the above method should also fall within the protection scope of the present invention.

The main innovation of the present invention lies in the superposition of multi-layer (double-layer) AAO porous membranes to construct a variety of kaleidoscope-like nano-patterns, which can be used as templates to realize the preparation of rich nano-structures. In particular, the ratio of nano-metal particles and high-density arrays thereof with large long diameters and extremely sharp tips can be prepared. Moreover, due to the suspension effect of the upper layer, extremely small gaps of 1 to 5 nm can be realized. Such gaps exist in large numbers in the above-mentioned high-density arrays, which can obtain a great local electric field enhancement and various excellent and peculiar nonlinear optical / Electrical effects. More importantly, by using this method, these high-density arrays can be fabricated in a large area and at low cost, making it easy to realize large-scale applications.

Therefore, without departing from the essence, idea and spirit of the present invention, combinations, substitutions and improvements made by those skilled in the art should also fall within the protection scope of the present invention. For example, it can be extended to the preparation of multilayer porous AAO films to achieve more applications, including: filling all the voids inside the multilayer AAO to obtain a three-dimensional mesoporous metal nanostructure, which may be useful in metamaterials. applied. Another example is not necessarily a metal nanostructure, multilayer AAO can be extended to other nanostructures. With multi-layer AAO as the skeleton, other nanomaterials are deposited or coated on the inner wall surface to form a porous structure. For example, a layer of carbon is deposited to be used as a supercapacitor electrode.

The present invention has the following beneficial effects:

(1) The present invention can realize kaleidoscope-like rich nano-patterns by adjusting the pore/wall size, relative displacement, and relative rotation angle of the upper and lower AAO porous membranes. If AAO with long-range order is used, and the relative position and relative angle of the upper and lower layers of AAO can be controlled, because the pore structure of AAO is nanoscale, it will be very convenient to obtain large-area (square centimeter-scale) structures. The complex patterns with nanoscale dimensions, as shown in Figures 1 to 3, give several typical pattern structures. If these patterns are prepared by EBL or FIB, it is very time-consuming, the area is small, and the cost is very high; however, AAO templates can be prepared quickly and at low cost.

(2) In the present invention, a multi-layer (double-layer) AAO porous film is used as a mask, and a large-area and high-density special-shaped nanoparticle array can be realized by deposition or evaporation. Different from the spherical particles obtained by the single-layer AAO porous membrane, the aspect ratio of the particles obtained by the double-layer AAO porous membrane is greatly improved, and the tip is extremely sharp, which has an obvious effect on improving the local electric field. As shown in Figure 4 and Figure 5.

(3) The present invention uses the lower layer of AAO porous membrane as support, and can make the pore wall of the upper layer membrane thinner than that of a single layer while still maintaining the transferability of the entire template. The upper film has two characteristics of thinner pore wall and suspension, and can cooperate with electron beam evaporation or deposition to obtain nanostructures with large-area gaps between 1 and 5 nm. As shown in Figure 4 and Figure 5, the gap between the nanoparticles is due to the blocking of the upper AAO pore wall held up by the lower AAO close to the substrate surface when the metal vapor is deposited on the substrate, and part of the metal vapor bypasses The bottom end of the suspended AAO pore wall forms an extremely narrow gap on the substrate that is smaller than the thickness of the upper AAO pore wall. Such a small gap will also generate a very strong local electric field, and unlike the extremely strong local electric field formed by the tip or edge of the particle, which is confined to a very small space at the tip or edge, this small gap local electric field will spread throughout the gap There are distributions in the middle, which increases the effective area.

(4) The method of the present invention has simple preparation conditions, low cost, does not require complex equipment, is easy to operate, and is suitable for large-scale industrial applications.

Description of drawings

Figure 1 shows some very typical examples of patterned nanostructures prepared by bilayer AAO thin films. (a) is a three-dimensional schematic diagram of superimposed double-layer AAO templates. In the figure, the aperture, hole spacing, hole arrangement, and template thickness of the upper and lower AAO layers are the same. The hole spacing is a, and all the holes in the two-layer template There is no relative rotation and translation. When a certain relative rotation or translation is performed, complex kaleidoscope-like patterns can be obtained. The white areas of the pattern are the substrate surface leaked through the bilayer AAO template, and nanostructures will be formed in these areas during the subsequent nanomaterial growth. For an AAO with the same upper and lower layers of structure, relative to the lower layer AAO, the upper layer template (b) is not translated, (c) is translated to the right by a/3, (d) is translated to the right by a/2, and down is translated by a/√3a , (e) 15° clockwise rotation, (f) 30° clockwise rotation, and (g) 45° clockwise rotation. When the pore size of the upper AAO is slightly smaller than that of the lower layer, the upper AAO is rotated 30° clockwise relative to the lower AAO (h), and (i) the obtained pattern is not translated or rotated. (k) When the pore diameter of the upper layer AAO is less than 1/3 of the lower layer pore size, the pattern obtained by the upper layer AAO does not translate or rotate relative to the lower layer AAO.

(b) in Figure 2 is the SEM image of the parallel silver nanoparticle pair array prepared on the silicon wafer by the double-layer AAO template combined with the electron beam evaporation method, (a) is the SEM image of the double-layer AAO template corresponding to the pattern; The two layers of AAO have the same structure, and the upper layer of AAO is translated by about a/2 distance relative to the lower layer of AAO.

Figure 3 (c) is the SEM image of the silver nanoparticle pair array with a petal-like pattern prepared on a silicon wafer by double-layer AAO template combined with electron beam evaporation method, and (a) is the corresponding double-layer AAO template. SEM image: The two layers of AAO have the same structure, and the upper AAO is rotated about 30° clockwise relative to the lower AAO.

Figure 4 is a TEM image of two typical silver particle pairs in a silver nanoparticle pair array prepared on a silicon wafer by the double-layer AAO template method; the gap size of the particle pairs can be more accurately measured by using TEM testing. (a,b) The particle-pair gaps shown are 5 nm and 1 nm, respectively.

Fig. 5 is a TEM image of a structure composed of three silver nanoparticles prepared on a silicon wafer by the double-layer AAO template method, here referred to as "trimer". The three gaps in this trimer are 7nm, 4nm and 3nm, respectively.

detailed description

The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but the embodiments do not limit the present invention in any form. Unless otherwise specified, the reagents, methods and equipment used in the present invention are conventional reagents, methods and equipment in the technical field.

Unless otherwise specified, the reagents and materials used in the present invention are commercially available.

The method of the present invention can prepare various patterned nanostructures through double-layer AAO thin films, as shown in FIG. 1 , which is some very typical examples of preparation of patterned nanostructures through double-layer AAO thin films. In the figure, (a) is a three-dimensional schematic diagram of superimposed double-layer AAO templates. In the figure, the aperture, hole spacing, hole arrangement, and template thickness of the upper and lower AAO layers are the same, and the hole spacing is a, and the two-layer template All the holes are facing right, there is no relative rotation and translation, when a certain relative rotation or translation is performed, complex patterns similar to kaleidoscopes can be obtained. The white areas of the pattern are the substrate surface leaked through the bilayer AAO template, and nanostructures will be formed in these areas during the subsequent nanomaterial growth. For an AAO with the same upper and lower layers of structure, relative to the lower layer AAO, the upper layer template (b) is not translated, (c) is translated to the right by a/3, (d) is translated to the right by a/2, and down is translated by a/√3a , (e) 15° clockwise rotation, (f) 30° clockwise rotation, and (g) 45° clockwise rotation. When the pore size of the upper AAO is slightly smaller than that of the lower layer, the upper AAO is rotated 30° clockwise relative to the lower AAO (h), and (i) the obtained pattern is not translated or rotated. (k) When the pore diameter of the upper layer AAO is less than 1/3 of the lower layer pore size, the pattern obtained by the upper layer AAO is not translated or rotated relative to the lower layer AAO.

The method of the present invention is illustrated below with specific examples.

Example 1

In this embodiment, silver nanoparticle arrays are prepared, and the steps are as follows:

S1. Stack two layers of the same AAO porous film and attach it to a clean silicon substrate. Among them, the AAO porous film is a double-pass porous film with long-range orderly pore arrangement prepared by nanoimprinting combined with anodic oxidation. The pore diameter, pore spacing and template thickness are 90nm, 100nm and 150nm respectively. The surface of the AAO template is covered with a layer of polyformaldehyde. Methyl acrylate film was used as support. When stacking, the upper AAO is translated relative to the lower AAO by approximately half the length of the aperture period.

S2. Put the silicon substrate covered with polymethyl methacrylate film/AAO film prepared in S1 in a nitrogen-protected rapid annealing furnace and heat it at 400°C for 10 min. The polymethyl methacrylate on the surface of AAO The ester is completely removed, and its SEM image is shown in Figure 2(a).

S3. Put the substrate covered with a double-layer porous template on the sample stage in the growth chamber of the electron beam evaporator, and after placing, ensure that the normal of the substrate plane is facing the crucible where the metal evaporation source is placed. Put the silver material with a purity of not less than 99.99% in the crucible, and the vacuum in the growth chamber is lower than 8×10 ^-6 Torr; the deposition rate is 0.1nm/s, and the deposition thickness is 25nm; after the deposition is completed, remove the porous template with adhesive tape Finally, the silver nanoparticle array is obtained, and the pattern is shown in Fig. 2(b). What is obtained is an array of silver nano-pairs parallel to each other.

Example 2

In this embodiment, silver nanoparticle arrays are prepared, and the steps are as follows:

S1. Stack two layers of the same AAO porous film and attach it to a clean silicon substrate. Among them, the AAO porous film is a double-pass porous film with long-range orderly pore arrangement prepared by nanoimprinting combined with anodic oxidation. The pore diameter, pore spacing and template thickness are 90nm, 100nm and 130nm respectively. The surface of the AAO template is covered with a layer of polyformaldehyde. Methyl acrylate film was used as support. When stacking, rotate the upper AAO about 30° relative to the lower AAO.

S2. Put the silicon substrate covered with polymethyl methacrylate film/AAO film prepared in S1 in acetone, and the polymethyl methacrylate on the surface of AAO is completely removed. The SEM image is shown in Figure 3(a) shown.

S3. Put the substrate covered with a double-layer porous template on the sample stage in the growth chamber of the electron beam evaporator, and after placing, ensure that the normal of the substrate plane is facing the crucible where the metal evaporation source is placed. Put the silver material with a purity of not less than 99.99% in the crucible, and the vacuum in the growth chamber is lower than 8×10 ^-6 Torr; the deposition rate is 0.1nm/s, and the deposition thickness is 20nm; after the deposition, remove the porous template with adhesive tape Finally, the silver nanoparticle array is obtained, and the pattern is shown in Fig. 3(b). What was obtained was an array of silver nanoparticles with a petal-like arrangement.

Example 3

In this embodiment, silver nanoparticle arrays are prepared, and the steps are as follows:

S1. Stack two layers of the same AAO porous film and attach it to a clean quartz glass substrate. Among them, the AAO porous film is a double-pass porous film with long-range orderly pore arrangement prepared by nanoimprinting combined with anodic oxidation. The pore diameter, pore spacing and template thickness are 90nm, 100nm and 130nm respectively. The surface of the AAO template is covered with a layer of polyformaldehyde. Methyl acrylate film was used as support. When stacking, the upper AAO is translated relative to the lower AAO by approximately half the length of the aperture period.

S2. Put the silicon substrate covered with polymethyl methacrylate film/AAO film prepared in S1 in acetone, and the polymethyl methacrylate on the surface of AAO is completely removed.

S3. Put the substrate covered with a double-layer porous template on the sample stage in the growth chamber of the electron beam evaporator, and after placing, ensure that the normal of the substrate plane is facing the crucible where the metal evaporation source is placed. Put the silver material with a purity of not less than 99.99% in the crucible, and the vacuum in the growth chamber is lower than 8×10 ^-6 Torr; the deposition rate is 0.1nm/s, and the deposition thickness is 25nm; after the deposition is completed, remove the porous template with adhesive tape Finally, the array of silver nanoparticle pairs is obtained. The gap between each pair of silver nanoparticles is less than 10nm, about 5nm, as shown in Figure 4(a), and some gaps are 1nm, as shown in Figure 4(b).

Example 4

In this embodiment, silver nanoparticle arrays are prepared, and the steps are as follows:

S1. Stack two layers of the same AAO porous film and attach it to a clean silicon substrate. Among them, the AAO porous film is a double-pass porous film with long-range orderly pore arrangement prepared by nanoimprinting combined with anodic oxidation. The pore diameter, pore spacing and template thickness are 90nm, 100nm and 130nm respectively. The surface of the AAO template is covered with a layer of polyformaldehyde. Methyl acrylate film was used as support. When stacking, rotate the upper AAO about 30° relative to the lower AAO.

S2. Put the silicon substrate covered with polymethyl methacrylate film/AAO film prepared in S1 in a nitrogen-protected rapid annealing furnace and heat it at 400°C for 10 min. The polymethyl methacrylate on the surface of AAO The ester is completely removed.

S3. Put the substrate covered with a double-layer porous template on the sample stage in the growth chamber of the electron beam evaporator, and after placing, ensure that the normal of the substrate plane is facing the crucible where the metal evaporation source is placed. Put the silver material with a purity of not less than 99.99% in the crucible, and the vacuum in the growth chamber is lower than 8×10 ^-6 Torr; the deposition rate is 0.1nm/s, and the deposition thickness is 25nm; after the deposition is completed, remove the porous template with adhesive tape Finally, silver nanoparticle arrays are obtained. In the resulting array, there are many structures composed of three particles, referred to as "trimers". There are three extremely narrow gaps in the silver trimer structure, as shown in Figure 5, which is a TEM image of a typical trimer, and the gaps are all below 10nm.

Example 5

In this embodiment, silver nanoparticle arrays are prepared, and the steps are as follows:

S1. Stack two layers of the same AAO porous film and attach it to a clean silicon substrate. Among them, the AAO porous film is a double-pass porous film with short-range and orderly pore arrangement prepared by the traditional two-step oxidation method. The pore diameter, pore spacing and template thickness are 90nm, 100nm and 200nm respectively. The surface of the AAO template is covered with a layer of polymethyl Methyl acrylate film was used as support.

S2. Put the silicon substrate covered with polymethyl methacrylate film/AAO film prepared in S1 in a nitrogen-protected rapid annealing furnace and heat it at 400°C for 10 min. The polymethyl methacrylate on the surface of AAO The ester is completely removed.

S3. Put the substrate covered with a double-layer porous template on the sample stage in the growth chamber of the electron beam evaporator, and after placing, ensure that the normal of the substrate plane is facing the crucible where the metal evaporation source is placed. Put the silver material with a purity of not less than 99.99% in the crucible, and the vacuum in the growth chamber is lower than 8×10 ^-6 Torr; the deposition rate is 0.1nm/s, and the deposition thickness is 20nm; after the deposition, remove the porous template with adhesive tape Finally, silver nanoparticle arrays are obtained. Since the upper and lower layers of AAO holes are arranged in short-range order, the pattern of the formed silver nanoparticle array is a combination similar to the structure shown in Figure 1b-h, and the distribution area of each pattern is several square microns to tens of square meters Microns. The arrangement of the patterns does not affect the size of the gaps in the silver nano-pairs and silver trimers, and the internal gaps of the obtained silver nanostructures are all below 10 nm, and some are as narrow as 1 nm.

Example 6

In this embodiment, silver nanoparticle arrays are prepared, and the steps are as follows:

S1. Stack two layers of the same AAO porous film and bond it to a clean ITO glass substrate. Among them, the AAO porous film is a double-pass porous film with long-range orderly pore arrangement prepared by nanoimprinting combined with anodic oxidation. The pore diameter, pore spacing and template thickness are 80nm, 100nm and 300nm respectively. Vinyl for support. When stacking, the upper AAO is translated relative to the lower AAO by approximately half the length of the aperture period.

S2. Put the silicon substrate covered with polystyrene film/AAO film prepared in S1 in acetone, and the polystyrene on the surface of AAO is completely removed.

S3. Put the substrate covered with a double-layer porous template on the sample stage in the growth chamber of the electron beam evaporator, and after placing, ensure that the normal of the substrate plane is facing the crucible where the metal evaporation source is placed. Put the gold material with a purity of not less than 99.99% in the crucible, and the vacuum in the growth chamber is lower than 8×10 ^-6 Torr; the deposition rate is 0.1nm/s, and the deposition thickness is 25nm; after the deposition, remove the porous template with tape A gold nanoparticle array is obtained.

Claims (8)

1. a kind of large-area nano graphic method based on multi-layered anode alumina formwork, it is characterised in that including following step Suddenly：

S1. two-layer bilateral AAO template is stacked, is transferred on target substrate；

S2. the material prepared needed for nanostructured is deposited with to the substrate surface for covering two-layer AAO template；

S3. two-layer AAO template is removed, that is, obtains the nano-structure array for patterning；

In preparation process, by the selection to different types of bilateral AAO template, by control levels AAO structure and Relative position, or by way of adjusting two-layer bilateral AAO template stacking, so as to obtain different complicated and abundant patterns Change nanostructured.

2. method according to claim 1, it is characterised in that the method shifted described in step S1 is：In AAO template surfaces One layer of high-molecular organic material supporting layer of coating will carry the bilateral AAO template of high-molecular organic material supporting layer as support After shearing, two is stacked together, is positioned on target substrate；Then pass through organic solvent or heat in an inert atmosphere Method removes high-molecular organic material supporting layer, leaves two-layer AAO and is close to substrate surface.

3. method according to claim 2, it is characterised in that the high-molecular organic material supporting layer is polymethyl Sour methyl ester or polystyrene；The organic solvent is at least one in acetone, dichloromethane or chloroform.

4. method according to claim 2, it is characterised in that the high-molecular organic material supporting layer is polymethyl Sour methyl ester, the method for the removing high-molecular organic material supporting layer are that 400～1000 DEG C are heated in nitrogen atmosphere, insulation 10～60 minutes.

5. method according to claim 1, it is characterised in that the method being deposited with described in step S2 be electron-beam vapor deposition method, Vacuum sublimation or magnetron sputtering method.

6. method according to claim 1, it is characterised in that substrate described in step S1 is simple glass, ito glass, FTO Glass, quartz glass, silicon, sapphire, carborundum or gallium nitride.

7. method according to claim 1, it is characterised in that the thickness of AAO templates described in step S1 is 50～1000nm； The lower floor AAO in two-layer bilateral AAO template described in step S1 can be substituted with organic porous films.

8. the nanostructured for being prepared according to the arbitrary methods described of claim 1～7.