CN105610415B - A kind of information processing method and electronic equipment - Google Patents
A kind of information processing method and electronic equipment Download PDFInfo
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- CN105610415B CN105610415B CN201510952518.XA CN201510952518A CN105610415B CN 105610415 B CN105610415 B CN 105610415B CN 201510952518 A CN201510952518 A CN 201510952518A CN 105610415 B CN105610415 B CN 105610415B
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- 230000010365 information processing Effects 0.000 title claims abstract description 13
- 238000003672 processing method Methods 0.000 title claims abstract description 13
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 claims abstract description 103
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000003321 amplification Effects 0.000 claims abstract description 21
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 21
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 230000035755 proliferation Effects 0.000 claims 1
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- 239000003990 capacitor Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 210000001367 artery Anatomy 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 210000003462 vein Anatomy 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000004069 differentiation Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
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Abstract
This application discloses a kind of information processing method and electronic equipment, the method includes：Receive rf pulse sequence to be amplified；Determine control sequence of voltage pulses corresponding with the rf pulse sequence；Based on the control sequence of voltage pulses, the control voltage of radio-frequency pulse amplifier is adjusted, power amplification is carried out to the rf pulse sequence, so that unevenness meets a preset condition at the top of the sequence of amplified rf pulse sequence.The application provides above-mentioned technical proposal, for solving to exist in the prior art pulse signal the technical issues of after the amplification of radio-frequency pulse amplifier, unevenness is difficult to ensure at the top of the sequence of output signal, realizes and eliminates technique effect uneven at the top of sequence.
Description
Technical field
The present invention relates to electronic technology field, more particularly to a kind of information processing method and electronic equipment.
Background technology
In the prior art, signal power is amplified usually using power amplifier.The type of power amplifier has very
More, from the point of view of frequency domain, in microwave radio field, power amplifier is referred to as radio-frequency power amplifier；From institute's amplified signal when
From the point of view of the characteristic of domain, power amplifier can be divided into pulse power amplifier (amplified signal is pulse-modulated signal) and continuous wave amplification
Device.When institute's amplified signal is the pulse-modulated signal of microwave radio frequency range, power amplifier can be described as radio-frequency pulse amplifier.
When in the prior art, using power amplifier, LDMOS (Laterally Diffused Metal are such as used
Oxide Semiconductor, lateral diffusion metal oxide semiconductor) power tube, usually the grid voltage of power tube is set
It is set to a fixed DC level, and the signal of input is amplified.
When being amplified to pulse signal using radio-frequency pulse amplifier, when output power is larger, such as in hectowatt magnitude
When above, due to the influence of the factors such as the transient thermal response of radio-frequency pulse amplifier and power supply power supply, the pulse train of transmitting
The power of middle single pulse will produce differentiation, i.e., the power of the pulse output in sequence more rearward is smaller.As it can be seen that in the prior art
There are pulse signals in the technology that after the amplification of radio-frequency pulse amplifier, unevenness is difficult to ensure at the top of the sequence of output signal
Problem.
Invention content
Pulse exists in the prior art for solving in a kind of information processing method of the embodiment of the present application offer and electronic equipment
Signal is real the technical issues of after the amplification of radio-frequency pulse amplifier, unevenness is difficult to ensure at the top of the sequence of output signal
Show and has eliminated technique effect uneven at the top of sequence.
On the one hand the embodiment of the present application provides a kind of information processing method, including：
Receive rf pulse sequence to be amplified；
Determine control sequence of voltage pulses corresponding with the rf pulse sequence；
Based on the control sequence of voltage pulses, the control voltage of radio-frequency pulse amplifier is adjusted, to the radio-frequency pulse
Sequence carries out power amplification, so that unevenness meets a preset condition at the top of the sequence of amplified rf pulse sequence.
Optionally, the radio-frequency pulse amplifier is that voltage controls power tube, the determination and the rf pulse sequence
Corresponding control sequence of voltage pulses, including：
Determine gate voltage pulse sequence corresponding with voltage control power tube.
Optionally, at the top of the sequence unevenness be the amplified rf pulse sequence in one cycle, wrapped
The difference of the peak-pulse power value and minimum pulse performance number that contain.
Optionally, determination control sequence of voltage pulses corresponding with the rf pulse sequence, including：
Determine synchronizing pulse train, wherein the time of occurrence of each pulse signal of the synchronizing pulse train in advance in
The pulse width of the time of occurrence of each pulse of the rf pulse sequence, the synchronizing pulse train is more than the RF pulse-to-pulse
Rush the pulse width of sequence；
Determine control voltage value corresponding with each pulse in the synchronizing pulse train；
Based on the synchronizing pulse train and the control voltage value, the control sequence of voltage pulses is generated.
Optionally, determination control voltage value corresponding with each pulse in the synchronizing pulse train, including：
The synchronizing pulse train is divided into N sections of pulse trains, N is positive integer；
Determine N number of control voltage value corresponding with the N sections of pulse train；
Based on N number of control voltage value, control voltage corresponding with each pulse in the synchronizing pulse train is determined
Value.
On the other hand the application provides a kind of electronic equipment, including：
Radio-frequency pulse amplifier；
Voltage generation circuit is controlled, is connected with the radio-frequency pulse amplifier, for generating the radio-frequency pulse amplifier
Control sequence of voltage pulses；
Wherein, the radio-frequency pulse amplifier receives rf pulse sequence to be amplified and control sequence of voltage pulses,
And it is based on the control sequence of voltage pulses, the control voltage of the radio-frequency pulse amplifier is adjusted, to the radio-frequency pulse sequence
Row carry out power amplification, so that unevenness meets a preset condition at the top of the sequence of amplified rf pulse sequence.
Optionally, the radio-frequency pulse amplifier is that voltage controls power tube, and the control sequence of voltage pulses is grid
Sequence of voltage pulses, the gate voltage pulse sequence are used to control the grid voltage of the voltage control power tube.
Optionally, the electronic equipment further includes：
Clock-pulse generator, for generating synchronizing pulse train, wherein each pulse of the synchronizing pulse train is believed
Number time of occurrence shift to an earlier date in the rf pulse sequence each pulse time of occurrence, the pulse of the synchronizing pulse train
Width is more than the pulse width of the rf pulse sequence；
Processor, for determining control voltage value corresponding with each pulse in the synchronizing pulse train；
Wherein, the control voltage generation circuit is based on the synchronizing pulse train and the control voltage value, generates institute
State control sequence of voltage pulses.
Optionally, the electronic equipment further includes：
Counter, for the synchronizing pulse train to be divided into N sections of pulse trains, N is positive integer；
Wherein, the processor is for determining N number of control voltage value corresponding with the N sections of pulse train, and is based on
N number of control voltage value determines control voltage value corresponding with each pulse in the synchronizing pulse train.
Optionally, the voltage control power tube is lateral diffusion metal oxide semiconductor power tube or gallium nitride work(
Put pipe.
Said one in the embodiment of the present application or multiple technical solutions at least have following one or more technology effects
Fruit：
One, the scheme in the embodiment of the present application adjusts the control of radio-frequency pulse amplifier using control sequence of voltage pulses
Voltage processed changes the gain of amplifier to the pulse train of different periods using different control voltage.Such as in pulse train
Initial stage, control voltage can select smaller voltage value, and in pulse train latter stage, control voltage can select larger voltage
Value.And in the prior art, control voltage is changeless.Therefore, the scheme in the embodiment of the present application can solve existing skill
There are pulse signals in art after the amplification of radio-frequency pulse amplifier, and unevenness is difficult to ensure at the top of the sequence of output signal
Technical problem realizes and eliminates technique effect uneven at the top of sequence.
Two, in the prior art in order to solve the problems, such as unevenness at the top of sequence, using amplifier and large capacity storage capacitor
Mode in parallel, but for the sequence of continuous hundreds of pulses, need capacity for the capacitance of 20000 μ F, and large capacity in parallel
After storage capacitor, unevenness is still undesirable at the top of sequence, greatly differs from each other with index is required.In addition, large capacity storage capacitor
Volume, weight are larger, and price is high, and the addition of large capacity storage capacitor makes booting surge increased clearly, to power supply
Reliability bring larger negative effect.Scheme in the embodiment of the present application, by controlling sequence of voltage pulses to radio frequency
The control voltage of pulse amplifier is adjusted, uneven at the top of sequence to eliminate, without using large capacity storage capacitor.Therefore,
Scheme in the embodiment of the present application realizes design simply, at low cost, and the technique effect of holding meanss miniaturization.
Three, the scheme in the embodiment of the present application, by synchronizing pulse train come make control sequence of voltage pulses with it is to be amplified
Rf pulse sequence synchronize.Meanwhile the pulse width of synchronizing pulse train is set greater than rf pulse sequence width, it protects
Card radio-frequency pulse amplifier has just adjusted control voltage before the arrival of each radio-frequency pulse, realizes guarantee radio-frequency pulse
The technique effect that will not be deformed after amplification.
Description of the drawings
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Apply embodiment, for those of ordinary skill in the art, without creative efforts, can also basis carry
The attached drawing of confession obtains other attached drawings.
Fig. 1 is a kind of flow chart of the information processing method provided in the embodiment of the present application one；
Fig. 2 is the schematic diagram of rf pulse sequence in the embodiment of the present application one；
Fig. 3 is that unevenness meets the amplified rf pulse sequence of preset condition at the top of sequence in the embodiment of the present application one
Schematic diagram；
Fig. 4 is the schematic diagram that sequence of voltage pulses is controlled in the embodiment of the present application one；
Fig. 5 is the mechanism block diagram of a kind of electronic equipment provided in the embodiment of the present application two；
Fig. 6 is a kind of hardware realization structure chart provided in the embodiment of the present application two.
Specific implementation mode
Pulse exists in the prior art for solving in a kind of information processing method of the embodiment of the present application offer and electronic equipment
Signal is real the technical issues of after the amplification of radio-frequency pulse amplifier, unevenness is difficult to ensure at the top of the sequence of output signal
Show and has eliminated technique effect uneven at the top of sequence.
In order to solve the above technical problems, general thought is as follows for technical solution in the embodiment of the present application：
Receive rf pulse sequence to be amplified；Determine control voltage pulse sequence corresponding with the rf pulse sequence
Row；Based on the control sequence of voltage pulses, adjust the control voltage of radio-frequency pulse amplifier, to the rf pulse sequence into
Row power amplification, so that unevenness meets a preset condition at the top of the sequence of amplified rf pulse sequence.
In the above-mentioned technical solutions, the control voltage of radio-frequency pulse amplifier is adjusted using control sequence of voltage pulses,
The gain of amplifier is changed using different control voltage to the pulse train of different periods.Such as in pulse train initial stage, control
Voltage processed can select smaller voltage value, and in pulse train latter stage, control voltage can select larger voltage value.And it is existing
In technology, control voltage is changeless.Therefore, the scheme in the embodiment of the present application can solve that arteries and veins exists in the prior art
Signal is rushed the technical issues of after the amplification of radio-frequency pulse amplifier, unevenness is difficult to ensure at the top of the sequence of output signal,
It realizes and eliminates technique effect uneven at the top of sequence.
In order to better understand the above technical scheme, below by attached drawing and specific embodiment to technical solution of the present invention
It is described in detail, it should be understood that the specific features in the embodiment of the present application and embodiment are to the detailed of technical solution of the present invention
Thin explanation, rather than to the restriction of technical solution of the present invention, in the absence of conflict, the embodiment of the present application and embodiment
In technical characteristic can be combined with each other.
Embodiment one
Referring to FIG. 1, the embodiment of the present application provides a kind of information processing method, including：
S10：Receive rf pulse sequence to be amplified；
S20：Determine control sequence of voltage pulses corresponding with the rf pulse sequence；
S30：Based on the control sequence of voltage pulses, the control voltage of radio-frequency pulse amplifier is adjusted, to the radio frequency
Pulse train carries out power amplification, so that unevenness meets a preset condition at the top of the sequence of amplified rf pulse sequence.
In specific implementation process, the radio-frequency pulse amplifier is specially voltage control power tube, such as LDMOS power amplifiers
Pipe, GaN (Gallium Nitride, gallium nitride) power tubes or other voltage-controlled amplifiers just differ at one stroke herein
Example.It in the embodiment of the present application, will be by taking radio-frequency pulse amplifier be LDMOS power tubes as an example, in the embodiment of the present application
Realization process be described in detail.
LDMOS power tubes are a kind of voltage-controlled type amplifying devices, can pass through the grid voltage of change LDMOS power tubes
To change the opening degree of conducting channel, and then the gain of change amplifier.Specifically, power tube inner conductive raceway groove opens journey
Degree is bigger, and gain is higher.There are many models for LDMOS power tubes, by taking the LDMOS power tubes of model ILD1044 as an example, the work(
Output power of the pipe with 400W or more in working band is put, gain amplifier reaches 16dB, and grid-control voltage is -5V~+3V.Its
In, when grid voltage is less than or equal to -3V, which, which has, is more than 20dB isolations, and inner conductive raceway groove, which is in, closes shape
State.When grid voltage is between 13V~+3V, gain and the grid voltage of power tube have preferable linear relationship, i.e., with grid
The gain of the increase of pole tension, power tube increases therewith.Therefore, can utilize the linear relationship, by adjust grid voltage come
Adjust the output power of power tube.
In the embodiment of the present application, first, step S10 is executed：Receive rf pulse sequence to be amplified.
Specifically, rf pulse sequence can include in one cycle any number of pulses, as wrapped in each period
Containing 500 pulses, or include 600 pulses etc. in each period.The amplitude of each pulse is theoretically to be consistent.Separately
Outside, the pulse width of each pulse can also be configured according to actual needs, such as 5 μ s of each pulse persistance, 7 μ s.Ability
Rf pulse sequence to be amplified can be arranged in the technical staff in domain according to actual operating mode, and the application does not do specific limit
It is fixed.In the embodiment of the present application, it includes the pulse that 500 width are 7 μ s in each period to be with rf pulse sequence to be amplified
For illustrate, as shown in Figure 2.When needing to be amplified rf pulse sequence, radio-frequency pulse amplifier first is wanted
First receive rf pulse sequence to be amplified.
Next, executing step S20：Determine control sequence of voltage pulses corresponding with the rf pulse sequence.
Specifically, every in order to make by taking above-mentioned each period includes the rf pulse sequence to be amplified of 500 pulses as an example
The amplitude of pulse in a period reaches requirement, can be directed to each pulse, be both provided with corresponding control voltage.This
Sample, control sequence of voltage pulses can be the sequence for also including 500 pulses in each period.In control sequence of voltage pulses
In, the amplitude of pulse is voltage value, i.e., is corresponding with 500 voltage values with radio-frequency pulse to be amplified, and specific voltage value can be with
It is configured according to actual needs.
Further, due to the early period in rf pulse sequence, the properties of radio-frequency pulse amplifier are more excellent, amplifier
Amplification effect it is preferable, therefore to first reaching the rf pulse sequence of amplifier it is not necessary that higher control voltage is arranged.And it is penetrating
The later stage of frequency pulse train is caused due to the influence of the factors such as the fuel factor of amplifier and power supply power supply in rf pulse sequence
Pulse output power rearward reduces, at this point it is possible to increase control voltage, increases the gain of amplifier, so that the pulse in later stage
Amplitude keeps or error identical as impulse amplitude early period smaller.
In specific implementation process, when the radio-frequency pulse amplifier is that voltage controls power tube, determination is penetrated with described
The corresponding control sequence of voltage pulses of frequency pulse train is specially：Determine grid corresponding with voltage control power tube
Sequence of voltage pulses.
Next, executing step S30：Based on the control sequence of voltage pulses, the control of radio-frequency pulse amplifier is adjusted
Voltage carries out power amplification to the rf pulse sequence, so that unevenness at the top of the sequence of amplified rf pulse sequence
Meet a preset condition.
Specifically, radio-frequency pulse amplifier is receiving rf pulse sequence to be amplified and control sequence of voltage pulses
Afterwards, the control voltage of amplifier is adjusted based on control sequence of voltage pulses.It is false still by taking above-mentioned LDMOS power tubes as an example
If control sequence of voltage pulses be 1,1.5,2 ..., then power tube rf pulse sequence first pulse reach when, by grid
Pole tension is adjusted to 1V, when second pulse of rf pulse sequence reaches, grid voltage is adjusted to 1.5V, in RF pulse-to-pulse
When rushing the third pulse arrival of sequence, grid voltage is adjusted to 2V, so as to carry out work under the voltage of power tube after the adjustment
Make.Due to the difference of grid voltage, the gain of power tube is also different, therefore, can amplify to control by adjusting grid voltage
Impulse amplitude afterwards.
Further, in specific implementation process, amplified rf pulse sequence is controlled by adjusting grid voltage
Sequence at the top of unevenness.Unevenness is specially the amplified rf pulse sequence in a cycle at the top of the sequence
It is interior, including peak-pulse power value and minimum pulse performance number difference.In the prior art, using increase large capacity energy storage
The method of capacitance, sequence top unevenness can only be controlled in 1.8dB, be greatly differed from each other with desired index.
Specifically, in the ideal situation, the unevenness at the top of sequence should be 0dB, but in practical applications, in radio-frequency pulse
When sequence is longer, it is extremely difficult that unevenness at the top of sequence, which is controlled in 0dB,.Therefore, in the embodiment of the present application, as long as sequence
Row top unevenness meets a preset condition, as unevenness is less than or equal to unevenness at the top of 1.2dB or sequence at the top of sequence
Less than or equal to 1dB etc., those skilled in the art can be configured according to specific needs, and the application is not specifically limited, this
By taking unevenness is less than or equal to 1.2dB at the top of sequence as an example, amplified rf pulse sequence is as shown in Figure 3 for application.
Further, in order to ensure rf pulse sequence with control sequence of voltage pulses it is synchronous, step S20 specifically include with
Lower step：
Determine synchronizing pulse train, wherein the time of occurrence of each pulse signal of the synchronizing pulse train in advance in
The pulse width of the time of occurrence of each pulse of the rf pulse sequence, the synchronizing pulse train is more than the RF pulse-to-pulse
Rush the pulse width of sequence；
Determine control voltage value corresponding with each pulse in the synchronizing pulse train；
Based on the synchronizing pulse train and the control voltage value, the control sequence of voltage pulses is generated.
Specifically, synchronizing pulse train can be that the clock-pulse generator in the electronic equipment using this method generates
, can also be the signal synchronous with radiofrequency signal being sent by electronic device exterior, those skilled in the art can basis
It is actually needed to be configured, the application is not specifically limited.
In order to make each pulse in control sequence of voltage pulses and each pulse in rf pulse sequence to be amplified
It corresponds, the number of pulses for including of synchronizing pulse train is identical as the number of pulses that rf pulse sequence includes.Such as, at this
Apply in embodiment, rf pulse sequence each period includes 500 pulses, then synchronizing pulse train each period also includes
500 pulses.Further, control sequence of voltage pulses each period also includes 500 pulses.Certainly, rf pulse sequence
Can also be aperiodic, the number that pulse train is included may be other values, as long as ensureing synchronizing pulse train and penetrating
Frequency pulse train synchronizes, and the application is not specifically limited.
In addition, in order to ensure that power tube turns on conducting channel before being amplified to radio-frequency pulse, RF pulse-to-pulse is avoided
Signal skew is rushed, each pulse of synchronizing pulse train will shift to an earlier date each pulse appearance in rf pulse sequence.Such as in synchronization
After 1 μ s occurs in the pulse signal of pulse train, the pulse signal of rf pulse sequence reaches again.It is of course also possible in synchronization
Occurring after 1.5 μ s, 2 μ s occurs in the pulse signal of pulse train, and the application is not specifically limited.Further, due to synchronization
Pulse train occurs relatively early, so the pulse width of synchronizing pulse train is greater than the pulse width of rf pulse sequence.Such as,
The pulse width of rf pulse sequence is 7 μ s, and the pulse width of synchronizing pulse train can be 8 μ s, 9 μ s etc..It thus can be with
Ensure that each pulse in rf pulse sequence of each pulse advancing in control sequence of voltage pulses reaches.For example, together
The pulse width of pace pulse sequence is 8 μ s, and the pulse width of rf pulse sequence is 7 μ s, then controls the arteries and veins of sequence of voltage pulses
It is 8 μ s to rush width also.In this way, in specific implementation process, after each pulse for controlling sequence of voltage pulses reaches 1 μ s, penetrate
Each pulse of frequency pulse train can just reach, i.e., after the conducting channel of power tube opens 1 μ s, just carried out to rf pulse sequence
Enhanced processing.
In order to determine control sequence of voltage pulses, control corresponding with each pulse in the synchronizing pulse train is also obtained
Voltage value processed.It is corresponding with each pulse in synchronizing pulse train according to the difference of rf pulse sequence in specific implementation process
Control voltage value also have corresponding variation.When as longer such as rf pulse sequence, need to increase amplifier in the sequence later stage
Gain compensates, then voltage value may be higher.Or it is different according to the amplification factor of rf pulse sequence, control voltage value
It also can be corresponding different.
Further, specific voltage value can be debugged for different rf pulse sequences, if being directed to certain
A kind of rf pulse sequence finds that the power after some pulse amplifying is relatively low during debugging, leads to amplified pulse
Unevenness is larger at the top of the sequence of sequence, then increases the corresponding grid-control voltage value of the pulse.It is corresponding, if debugging
It finds that the power after some pulse amplifying is higher in journey, causes sequence top unevenness larger, then reduce the corresponding control of the pulse
Voltage value processed.In this way, by debugging, for different types of rf pulse sequence, there is corresponding one group of control voltage
Value can pre-save these control voltage values in memory, and the rf pulse sequence so as to next time in same type arrives
When, directly invoke this corresponding group control voltage value.It is of course also possible to determine control electricity in real time according to rf pulse sequence
Pressure value directly generates control voltage value that is, without calling.Those skilled in the art can select according to actual needs
It selects, the application is not specifically limited.
Further, it is determined that synchronizing pulse train and control voltage value, it can be so that each of synchronizing pulse train
Pulse carries corresponding control voltage value, generates control sequence of voltage pulses, as shown in Figure 4.Such as by by lock-out pulse
Sequence is multiplied with control voltage value or other realization methods, the application are not specifically limited.
Further, specific to wrap in order to determine control voltage value corresponding with each pulse in the synchronizing pulse train
Include following steps：
The synchronizing pulse train is divided into N sections of pulse trains, N is positive integer；
Determine N number of control voltage value corresponding with the N sections of pulse train；
Based on N number of control voltage value, control voltage corresponding with each pulse in the synchronizing pulse train is determined
Value.
Specifically, rf pulse sequence can be segmented according to number of pulses, still with it is above-mentioned include 500 pulses
Rf pulse sequence for.Pulse can be divided into 5 sections, every section includes 100 pulses, or pulse is divided into 6 sections, every section
Including umber of pulse can arbitrarily be configured, the application is not specifically limited.According to the rf pulse sequence of segmentation, segmentation is defeated
Go out to control voltage value, Discrete control is carried out to the grid voltage of power tube.If rf pulse sequence is divided into 5 sections, can will control
Sequence of voltage pulses is also classified into 5 sections, and every section of voltage value can be identical or different.
In specific implementation process, due to synchronizing pulse train with rf pulse sequence be it is one-to-one, can be with
Rf pulse sequence is divided into N sections using synchronizing pulse train is divided into N Duan Lai representatives.For example, if by lock-out pulse
Sequence is divided into 5 sections, and every section includes 100 pulses, can be realized by counter.Specifically, when the of synchronizing pulse train
When one pulse reaches, counter starts timing, when counter reaches 100, shows that first segment pulse train is over, this
Hour counter reclocking since 1 shows that second end pulse train is over when counter reaches 100 herein.
For every section of pulse train, there are matched control voltage value, voltage value such as corresponding with 5 sections of pulse trains
Respectively 1V, 1.3V, 2V, 2.5V, 2.8V.Then counter controls 100 of sequence of voltage pulses when reaching first 100
Pulse amplitude is 1V, and when counter is when reaching second 100,100 pulse amplitudes for controlling sequence of voltage pulses are
1.3V, and so on, the specific sequence of voltage pulses that controls please refers to Fig.4.Certainly, every section of voltage value can be according to practical need
It is configured, the application is not specifically limited.
Embodiment two
Based on inventive concept same as information processing method in the embodiment of the present application one, the embodiment of the present application provides a kind of
Electronic equipment, referring to FIG. 5, the electronic equipment includes：
Radio-frequency pulse amplifier 50；
Voltage generation circuit 51 is controlled, is connected with the radio-frequency pulse amplifier 50, is put for generating the radio-frequency pulse
The control sequence of voltage pulses of big device 50；
Wherein, the radio-frequency pulse amplifier 50 receives rf pulse sequence to be amplified and control voltage pulse sequence
Row, and it is based on the control sequence of voltage pulses, the control voltage of the radio-frequency pulse amplifier 50 is adjusted, to the RF pulse-to-pulse
It rushes sequence and carries out power amplification, so that unevenness meets a preset condition at the top of the sequence of amplified rf pulse sequence.
Specifically, the radio-frequency pulse amplifier 50 is that voltage controls power tube, and the control sequence of voltage pulses is
Gate voltage pulse sequence, the gate voltage pulse sequence are used to control the grid voltage of the voltage control power tube.
In specific implementation process, the voltage control power tube can be lateral diffusion metal oxide semiconductor power tube (LDMOS work(
Put pipe) or gallium nitride power tube (GaN) power tube.
By taking LDMOS power tubes as an example, opening for conducting channel can be changed by changing the grid voltage of LDMOS power tubes
Degree of leaving, and then change the gain of amplifier.Specifically, power tube inner conductive raceway groove opening degree is bigger, gain is higher.
There are many models for LDMOS power tubes, and by taking the LDMOS power tubes of model ILD1044 as an example, which has in working band
The output power of 400W or more, gain amplifier reach 16dB, and grid-control voltage is -5V~+3V.Wherein, it is less than in grid voltage
When equal to -3V, which, which has, is more than 20dB isolations, and inner conductive raceway groove is closed.When grid voltage is in 13V
When between~+3V, gain and the grid voltage of power tube have preferable linear relationship, i.e., with the increase of grid voltage, power amplifier
The gain of pipe increases therewith.Therefore, the linear relationship can be utilized, the output work of power tube is adjusted by adjusting grid voltage
Rate.
Fig. 6 illustrates a kind of hardware realization structure chart of the embodiment of the present application, with the electronic equipment includes two in figure
For a power tube PA1, PA2, to be illustrated to the scheme of the present embodiment.
Control voltage generation circuit in Fig. 6 is connected with PA1 and PA2 respectively, the control of control voltage generation circuit output
Sequence of voltage pulses respectively controls the grid voltage of PA1 and PA2.Specifically, the control voltage arteries and veins of control PA1 and PA2
It can be identical to rush sequence, can also be different, the application is not specifically limited.
Using the hardware configuration in Fig. 6, rf pulse sequence first passes around the amplification of driving amplifier, is then passed to
Power divider is divided into two paths of signals, is amplified operation by PA1 and PA2 respectively.In specific implementation process, power distribution
Mode can be configured according to actual needs, in this application, using Wilkinson formula.Next, PA1 and PA2 roots
The control sequence of voltage pulses generated according to control voltage generation circuit believes two-way to be adjusted to respective grid voltage
Number it is amplified operation respectively.Finally, amplified two paths of signals is combined into signal all the way by power combiner and carries out defeated
Go out.
Further, the electronic equipment further includes：
Clock-pulse generator, for generating synchronizing pulse train, wherein each pulse of the synchronizing pulse train is believed
Number time of occurrence shift to an earlier date in the rf pulse sequence each pulse time of occurrence, the pulse of the synchronizing pulse train
Width is more than the pulse width of the rf pulse sequence；
Processor, for determining control voltage value corresponding with each pulse in the synchronizing pulse train；
Wherein, the control voltage generation circuit is based on the synchronizing pulse train and the control voltage value, generates institute
State control sequence of voltage pulses.
Further, the electronic equipment further includes：
Counter, for the synchronizing pulse train to be divided into N sections of pulse trains, N is positive integer；
Wherein, the processor is for determining N number of control voltage value corresponding with the N sections of pulse train, and is based on
N number of control voltage value determines control voltage value corresponding with each pulse in the synchronizing pulse train.
Specifically, the processor can be that (Field Programmable Gate Array, scene can compile FPGA
Journey gate array), electronic equipment can also include memory, for storing the control voltage value.In specific implementation process,
FPGA receives the synchronizing pulse train sent from clock-pulse generator, and unison counter starts timing, is based on counter pair
Synchronizing pulse train is segmented, and it is one section such as often to count 100 numbers, and the quantity that either often meter 150 is one section or every section is not
Identical, those skilled in the art can be configured according to actual needs.FPGA calls storage in memory according to segmentation situation
Voltage value, such as first voltage value of the first segment call, the second voltage value of segment call second, by the above-mentioned means, generate control
Sequence of voltage pulses processed.
Various change mode in information processing method and specific example in 1 embodiment of earlier figures are equally applicable to this reality
The electronic equipment for applying example, by the aforementioned detailed description to information processing method, those skilled in the art are clear that
The implementation of electronic equipment in the present embodiment, so in order to illustrate the succinct of book, this will not be detailed here.
Said one in the embodiment of the present application or multiple technical solutions at least have following one or more technology effects
Fruit：
One, the scheme in the embodiment of the present application adjusts the control of radio-frequency pulse amplifier using control sequence of voltage pulses
Voltage processed changes the gain of amplifier to the pulse train of different periods using different control voltage.Such as in pulse train
Initial stage, control voltage can select smaller voltage value, and in pulse train latter stage, control voltage can select larger voltage
Value.And in the prior art, control voltage is changeless.Therefore, the scheme in the embodiment of the present application can solve existing skill
There are pulse signals in art after the amplification of radio-frequency pulse amplifier, and unevenness is difficult to ensure at the top of the sequence of output signal
Technical problem realizes and eliminates technique effect uneven at the top of sequence.
Two, in the prior art in order to solve the problems, such as unevenness at the top of sequence, using amplifier and large capacity storage capacitor
Mode in parallel, but for the sequence of continuous hundreds of pulses, need capacity for the capacitance of 20000 μ F, and large capacity in parallel
After storage capacitor, unevenness is still undesirable at the top of sequence, greatly differs from each other with index is required.In addition, large capacity storage capacitor
Volume, weight are larger, and price is high, and the addition of large capacity storage capacitor makes booting surge increased clearly, to power supply
Reliability bring larger negative effect.Scheme in the embodiment of the present application, by controlling sequence of voltage pulses to radio frequency
The control voltage of pulse amplifier is adjusted, uneven at the top of sequence to eliminate, without using large capacity storage capacitor.Therefore,
Scheme in the embodiment of the present application realizes design simply, at low cost, and the technique effect of holding meanss miniaturization.
Three, the scheme in the embodiment of the present application, by synchronizing pulse train come make control sequence of voltage pulses with it is to be amplified
Rf pulse sequence synchronize.Meanwhile the pulse width of synchronizing pulse train is set greater than rf pulse sequence width, it protects
Card radio-frequency pulse amplifier has just adjusted control voltage before the arrival of each radio-frequency pulse, realizes guarantee radio-frequency pulse
The technique effect that will not be deformed after amplification.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (8)
1. a kind of information processing method, including：
Receive rf pulse sequence to be amplified；
Determine synchronizing pulse train, wherein the time of occurrence of each pulse signal of the synchronizing pulse train is in advance in described
The pulse width of the time of occurrence of each pulse of rf pulse sequence, the synchronizing pulse train is more than the radio-frequency pulse sequence
The pulse width of row；
Determine control voltage value corresponding with each pulse in the synchronizing pulse train；
Based on the synchronizing pulse train and the control voltage value, control sequence of voltage pulses is generated；
Based on the control sequence of voltage pulses, the control voltage of radio-frequency pulse amplifier is adjusted, to the rf pulse sequence
Power amplification is carried out, so that unevenness meets a preset condition at the top of the sequence of amplified rf pulse sequence.
2. the method as described in claim 1, which is characterized in that the radio-frequency pulse amplifier is that voltage controls power tube, institute
It is gate voltage pulse sequence corresponding with voltage control power tube to state control sequence of voltage pulses.
3. the method as described in claim 1, which is characterized in that unevenness is the amplified RF pulse-to-pulse at the top of the sequence
Rush sequence in one cycle, including peak-pulse power value and minimum pulse performance number difference.
4. the method as described in any claims of claim 1-3, which is characterized in that in the determination and the synchronizing pulse train
The corresponding control voltage value of each pulse, including：
The synchronizing pulse train is divided into N sections of pulse trains, N is positive integer；
Determine N number of control voltage value corresponding with the N sections of pulse train；
Based on N number of control voltage value, control voltage value corresponding with each pulse in the synchronizing pulse train is determined.
5. a kind of electronic equipment, including：
Radio-frequency pulse amplifier for receiving rf pulse sequence to be amplified and control sequence of voltage pulses, and is based on institute
Control sequence of voltage pulses is stated, the control voltage of the radio-frequency pulse amplifier is adjusted, work(is carried out to the rf pulse sequence
Rate is amplified, so that unevenness meets a preset condition at the top of the sequence of amplified rf pulse sequence；
Clock-pulse generator, for generating synchronizing pulse train, wherein each pulse signal of the synchronizing pulse train
Time of occurrence shifts to an earlier date in the time of occurrence of each pulse of the rf pulse sequence, the pulse width of the synchronizing pulse train
More than the pulse width of the rf pulse sequence；
Processor, for determining control voltage value corresponding with each pulse in the synchronizing pulse train；
Voltage generation circuit is controlled, is connected with the radio-frequency pulse amplifier, the control for generating the radio-frequency pulse amplifier
Sequence of voltage pulses processed, wherein the control voltage generation circuit is based on the synchronizing pulse train and the control voltage value,
Generate the control sequence of voltage pulses.
6. electronic equipment as claimed in claim 5, which is characterized in that the radio-frequency pulse amplifier is that voltage controls power amplifier
Pipe, the control sequence of voltage pulses are gate voltage pulse sequence, and the gate voltage pulse sequence is for controlling the electricity
The grid voltage of voltage-controlled power tube processed.
7. electronic equipment as claimed in claim 5, which is characterized in that the electronic equipment further includes：
Counter, for the synchronizing pulse train to be divided into N sections of pulse trains, N is positive integer；
Wherein, the processor is for determining N number of control voltage value corresponding with the N sections of pulse train, and is based on the N
A control voltage value determines control voltage value corresponding with each pulse in the synchronizing pulse train.
8. electronic equipment as claimed in claim 5, which is characterized in that the voltage control power tube is horizontal proliferation metal oxygen
Compound semiconductor power amplifier pipe or gallium nitride power tube.
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| CN201510952518.XA CN105610415B (en) | 2015-12-17 | 2015-12-17 | A kind of information processing method and electronic equipment |
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| US6304145B1 (en) * | 2000-02-02 | 2001-10-16 | Nokia Networks Oy | Large signal amplifier gain compensation circuit |
| US6784740B1 (en) * | 2002-12-20 | 2004-08-31 | Atheros Communications, Inc. | Power amplifier |
| CN101030760A (en) * | 2006-12-27 | 2007-09-05 | 京信通信技术(广州)有限公司 | Self-adaptive grid-voltage compensator and its compensation |
| CN101702618A (en) * | 2008-07-08 | 2010-05-05 | SiGe半导体公司 | Gain control of radio frequency linear power amplifier |
| CN102594264A (en) * | 2012-02-22 | 2012-07-18 | 刘轶 | Radio frequency power amplifier and input matching circuit thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6304145B1 (en) * | 2000-02-02 | 2001-10-16 | Nokia Networks Oy | Large signal amplifier gain compensation circuit |
| US6784740B1 (en) * | 2002-12-20 | 2004-08-31 | Atheros Communications, Inc. | Power amplifier |
| CN101030760A (en) * | 2006-12-27 | 2007-09-05 | 京信通信技术(广州)有限公司 | Self-adaptive grid-voltage compensator and its compensation |
| CN101702618A (en) * | 2008-07-08 | 2010-05-05 | SiGe半导体公司 | Gain control of radio frequency linear power amplifier |
| CN102594264A (en) * | 2012-02-22 | 2012-07-18 | 刘轶 | Radio frequency power amplifier and input matching circuit thereof |
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