CN105590941A - Method for improving photoelectric sensor and light-sensitive material weak light detection ability - Google Patents
Method for improving photoelectric sensor and light-sensitive material weak light detection ability Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000001514 detection method Methods 0.000 title claims abstract description 15
- 238000005286 illumination Methods 0.000 claims abstract description 9
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 claims abstract description 4
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- JKFYKCYQEWQPTM-UHFFFAOYSA-N 2-azaniumyl-2-(4-fluorophenyl)acetate Chemical compound OC(=O)C(N)C1=CC=C(F)C=C1 JKFYKCYQEWQPTM-UHFFFAOYSA-N 0.000 claims 1
- 229910021607 Silver chloride Inorganic materials 0.000 claims 1
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- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 claims 1
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- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 claims 1
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- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims 1
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- 229910052709 silver Inorganic materials 0.000 abstract description 8
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/192—Colour image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
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Abstract
本发明涉及光电信号检测；光电图像成像；银盐感光材料成像；非银感光材料成像技术领域。当使用光电或光化学传感器对微弱光信号或高动态范围光信号的弱光部分进行检测时，检测设备受到光传感器或图像传感器及感光材料本身弱光检测和记录性能的局限而造成的不利影响十分明显。本发明提出一种提高光电传感器或感光材料弱光检测能力的方法。通过实施一束或多束照射于光电传感器或感光材料的补充光，通过适当增加作用于传感器的光子数量，使其输入和输出均适度提高。令补充光的光强或者超出传感器最低照度进入其可测量范围，或者处于其光照特性曲线线性区域的合适位置，从而提高其弱光检测能力。
The invention relates to the technical field of photoelectric signal detection; photoelectric image imaging; silver salt photosensitive material imaging; non-silver photosensitive material imaging. When photoelectric or photochemical sensors are used to detect weak light signals or weak light parts of high dynamic range light signals, the detection equipment is adversely affected by the limitations of the light sensor or image sensor and the weak light detection and recording performance of the photosensitive material itself. obvious. The invention proposes a method for improving the weak light detection ability of a photoelectric sensor or a photosensitive material. By implementing one or more beams of supplementary light irradiated on the photoelectric sensor or photosensitive material, by appropriately increasing the number of photons acting on the sensor, both its input and output are moderately improved. Make the light intensity of the supplementary light either exceed the minimum illuminance of the sensor and enter its measurable range, or be at a suitable position in the linear region of its illumination characteristic curve, thereby improving its weak light detection capability.
Description
Technical field
The present invention relates to photosignal detects; Photoelectric image imaging; Silver sensitive material imaging; Photosensitive non-silver material imagingTechnical field.
Background technology
Optical pickocff, common comprising utilizes inner photoeffect (photoconduction, photogenic voltage, photoelectromagnetic, photon traction)Sensor, for example: the electro-optical imaging sensors such as photodiode, photo resistance and CCD, CMOS, CIS, infrared imaging device;The photomultiplier of external photoeffect; Various photochemistry detection record including silver sensitive material and photosensitive non-silver materialMedium.
Detection to faint optical signal and the photography and vedio recording of low light environment, all have a lot of demands in each field. For thisA lot of New-type detector parts are opened up, for example: avalanche photodide; Low-light (level) cmos image sensor; Electronics bombardment EBCCD;Electron multiplication EMCCD; And the infrared focal plane array such as InSb, PtSi.
Although the technology of optical pickocff is constantly progressive, determines at the optical acquisition device such as incident optical signal and camera lensTime, all there is different dynamic ranges, sensitivity (also claiming minimal illumination) and different non-linear in certain device.
The linearity of photodiode (comprising PIN and snowslide pipe) is best, and other is followed successively by photocell, phototriode, lightThe linearity of quick resistance is the poorest. Dynamic range is divided into linear dynamic range and Nonlinear Dynamic scope. Aspect linear dynamic range,The photodiode dynamic range of reverse-bias state is best, and photocell, phototriode, composite photoelectric triode are better, lightQuick resistance is the poorest. The Nonlinear Dynamic scope of photo resistance is wider than other photoelectric device. The sensitivity of photo resistance is the highest, otherBe followed successively by avalanche photodide, composite photoelectric triode, phototriode, the sensitivity of photodiode is minimum. Photoelectricity twoDark current and the noise of utmost point pipe are minimum.
Typical CCD(is TTL technique CCD) and CMOS(be CMOS technique CCD) imageing sensor is with having photogenic voltageThe photodiode of the reverse-bias state of effect, as the quick unit of picture, generally has good dynamic range and the linearity, spiritSensitivity is lower. The relation (spectral response curve) of the current sensitivity of CCD and incident radiation wavelength is very complicated, to different faceThe light of look has different sensitivity curves.
The linearity of silver sensitive material and sensitivity difference are very large. The characteristic curve of negative film relatively tilts, toe, straight linePortion and shoulder feature are obvious, and its speed is higher, and less light exposure just can produce suitable optical density (OD). The characteristic of positiveCurve is more steep, and toe is shorter, and shoulder is not obvious, and speed is low, needs more light exposure could obtain suitable imageDensity. Three color sensitive layers of colour positive or negative film also have different sensitivity curves to the light of different colours. Diazonium etc.Non-silver salt photosensitive material resolving power is high, has sensitivity spectrum separately and non-linear.
Summary of the invention
Technical problem
When using photoelectricity or Optochemical sensor to detect the low light level part of faint optical signal or HDR optical signalTime, checkout equipment is subject to the limitation of the own Dim light measurement of optical sensor or imageing sensor and photosensitive material and record performance and makesThe adverse effect becoming is fairly obvious. Show highlightedly, when enough faint optical signal arrives by optical acquisition devices such as camera lensesWhen optical pickocff or photosensitive material, light signal strength may be still lower than the minimal illumination of optical sensor, (sensitivity is generally usedMinimal illumination represents), or nonlinear area (under-exposed Under-exposure) in its output characteristic curve bottomTime, see Fig. 1, Fig. 2, Fig. 3, Fig. 4, exist the signal of low light level part to mix as a slice; The pixel that is much used for describing dim environment does not haveHave time enough to receive enough photon amounts, the detected value drawing be 0 or detected value extremely low. Will cause so dim partLoss of learning, or signal level resolving power reduces, the shortcoming of poor linearity. And this shortcoming is difficult to the signal place after detectionIn reason or image processing process, obtain substantial improvement. A kind of solution is to expose to the sun by improving camera lens clear aperture or prolongationThereby between the light time, increase light exposure and solve this problem. But under definite optical signal dynamic range condition, improve light letterNumber intensity has the limit, and excessively raising easily causes high light part to exceed sensor detection range, forms over-exposed. AndIncrease optical lens bore increase system weight and manufacturing cost thereby need to pay, and too much prolonging exposure time causes fuzzyWith costs such as sluggishnesses. Concerning digital photography, digital camera, another kind of solution is that to utilize equipment component to record harmlessThe ability of compression RAW form initial data or high code stream HDR data, by post-digital image processing techniques from formerIn beginning data, recover a part of low light level image data. But this processing mode had both been brought extra cost, be difficult to again faint lightThe situation that signal fails properly to be detected and record is substantially improved, more difficult for real-time video monitoring systemTo realize.
To the solution of technical problem
In view of above problem, the present invention proposes a kind of method that improves photoelectric sensor or photosensitive material Dim light measurement ability. LogicalCross and implement a branch of or multi beam and irradiate the supplementary light in photoelectric sensor or photosensitive material, by suitable increasing action in sensorPhoton numbers, makes all appropriateness raisings of its input and output. Order supplements the light intensity of light or exceeds sensor minimal illumination and enters itMeasurable range, or correct position in its light characteristics curve linear region.
In the time window of measuring at flashlight, make described supplementary light common according to intensity and the tested optical signal setIrradiate in photoelectric sensor or photosensitive material, jointly participate in the photochemistry of photoelectric conversion process or the photosensitive material of photoelectric sensorProcess. Make luminous intensity that sensor receives be greater than the luminous intensity from signal source merely, and be operated in can detection range or defeatedGo out the range of linearity of characteristic, thereby improve its Dim light measurement ability. After this, measured through analog and digital signal processing procedureResult data.
By carrying out the photo measure process of independently supplementing. Shutdown signal optical channel, measures, records above-mentioned supplementary light light is passed" affecting data set " that the output of sensor or photosensitive material brings. Can measure comprehensively and record the supplementary light of varying strength with notSame shutter speed, " the affecting data set " under the various combined situation of different system data processing parameters. Also can only surveyThe data of measuring a few exposure combination, the data of other combination obtain according to the calculated with mathematical model of this light sensor system.Record is also reused this and is mended " filling influence of light data set " in measurement, until it need to remeasure and revise.
Can be according to the use needs to measurement data, select to utilize known " supplementing influence of light data set ", through letterNumber process or digital image processing method is eliminated and supplemented the light higher impact of measurement result data value that may cause. This was processedJourney can itself be processed by optical signal detecting equipment, also can be by miscellaneous equipment processing after measurement finishes, and obtain revising and mendFill the result data after influence of light. To rely on its light characteristics separately to process to the correction of various nonlinear transducers. RightLinear transducer, the simplest linear revise algorithm is that measurement data is deducted and supplements influence of light data:
Ｆ(Ls)＝F(LsLr)－F(Lr)
If: in the time that other exposure parameter is identical, Ls is flashlight signal; Lr is for supplementing optical signal; F (Lr) is what measure" supplement influence of light data "; The measurement result that F (LsLr) is " supplement light and flashlight acting in conjunction " that measure; F (Ls)For revising the result data supplementing after influence of light; "-" operator is the subtraction fortune of corresponding locus pixel value or color valueCalculate.
For known specific electro-optical imaging sensors or photosensitive material, can know in advance its light characteristics curve and lightSpectrum response curve. Can use luminous intensity stable, high s/n ratio, that luminous intensity is adjustable, arrive photosensitive sensor planeEach several part light field uniformly and have applicable spectrum (visible ray, infrared ray, ultraviolet ray, X-ray) single source, multiple separatelyThe combination of the light source of light source, multiple different spectrum radiant as a supplement. There is certain width the time response of optical sensor,Time average has been made in the strong instantaneous fluctuating of width interior focusing; The window that enters of sensor has certain area, at this area interior focusingDistribution done the average of space. To not too weak supplementary light, can think desirable signal.
The irradiation target of supplementing radiant is the sense that photoelectric sensor enters window, electro-optical imaging sensors or photosensitive material egative filmOptical plane, can be by multiple light sources, according to the characteristic of sensor from any direction or angle that can reach above-mentioned light filling effectIrradiation is come.
Supplement light and flashlight and should distinguish direct irradiation in sensor of interest, or through optical lens, reflection separatelyAfter mirror, irradiate in sensor of interest. But supplement light and flashlight and should not have signal through devices such as semi-permeable and semi-reflecting mirrorThe mixing of loss, in order to avoid affect signal light intensity and signal to noise ratio.
The difference of signal integration characteristic, shutter type and the application demand of the different optical sensors of foundation, described in not requiringSupplement light and flashlight window illumination sensor at one time. Supplement the time window of light action, can with flashlight effectTime window identical, also can be different.
Supplementing the luminous intensity of light should adjust and close, and this will be conducive to different optical signal environment and differenceUnder exposure parameter, adjust meticulously the detection performance of different sensors, and ensure suitable detection dynamic range.
Unless needed, should be stable and high s/n ratio otherwise supplement the luminous intensity of light, be conducive to like this formallyBefore measuring, record and supplement " affecting data set " that light brings the output of optical sensor or photosensitive material. And reuse this" affect data set " and revise many parts of measurement data results.
Supplement light action in the time of imageing sensor, the complexity to spectral response due to CCD/CMOS or photosensitive material,May need to supplement the luminous intensity difference of the each color of light in light; For multiple sensor, multilayer coloured silks that irradiate through spectroscopeThe optical sensor of color sensation luminescent material, Heterolamellar photovoltaic element, because the optical signal that each color sensor devices or color photosensitive layer obtainDecay is different, may need equally to supplement the luminous intensity difference of the each color of light in light, to ensure supplementing light to each pixel listThe even action of unit's (or each color measurement unit) and consistent.
Described photoelectric sensor comprises: various photodiodes; Phototriode; Photocell; Photomultiplier; PhotosensitiveResistance; Single photosensitive layer or many photosensitive layers array electro-optical imaging sensors (all kinds of CCD, CMOS, infrared focal plane array, non-systemCold Infrared Detectors).
Described photosensitive material comprises: silver salt and non-silver salt photosensitive material.
Described flashlight and supplementary light spectral region are ultraviolet ray; Visible ray; Infrared ray; X-ray.
Brief description of the drawings
Fig. 1 is the schematic diagram of linear photoconductor sensor, electro-optical imaging sensors light characteristics curve.
Fig. 2 is the schematic diagram of silver sensitive material light characteristics curve.
Fig. 3 is silver sensitive material photographic negative positive and the schematic diagram that contrasts of the light characteristics curve of negative film.
Fig. 4 is that in photoelectric digital photography, picture pick-up device, sensor output, after the conversion of device interior signal processing circuit, isThe schematic diagram of the light characteristics curve of system output.
Fig. 5 is the structure drawing of device of one embodiment of the invention.
Fig. 6 is the workflow diagram of one embodiment of the invention.
Detailed description of the invention
Below, by reference to the accompanying drawings embodiments of the present invention are described. In following enforcement, as of the present invention oneIndividual application example, utilizes the photographic process of reflector-free type digital electronic camera (cmos image sensor, electronic shutter) to enterRow explanation.
Fig. 5 is the structure drawing of device of the present embodiment. As shown in Figure 5,1 is tested optical signal Ls; 5 for supplementing optical signal Lr.This camera installation possesses: optical male set of lenses 2, aperture 3, supplementary lighting sources 4, photography and vedio recording photometry element cmos image sensor 6,And other optics, machinery, electronic unit. The workflow diagram of the present embodiment as shown in Figure 6.
First the partial content that " supplements photo measure pattern " in execution graph 6 flow processs in the present embodiment. Close 1 flashlight Ls logicalRoad, by without flashlight camera lens 2, is independently irradiated to the supplementary light 5 signal Lr on cmos image sensor 6 focal planesMeasurement exposes. Measure the combination of many group exposure shutter speed, ISO parameter and multiple supplementary light Lr intensity, and be recorded as " benefitFill influence of light data set ". Choose the measurement image of identical parameters in wherein taking with next step is formal as " F (Lr) ".
In the time that formal measurement (photography) starts, " screening-mode " partial content in execution graph 6 flow processs. Establish according to camera parameterDetermine to be judged whether to open by photometric system supplement optical signal and set the supplementary light Lr intensity needing, or by camera userSupplementary light Lr intensity is opened and is set in selection. The setting that the present embodiment supplements light Lr by Artificial Control is (with above-mentioned supplementary light F (Lr)When measurement, set identical), remaining exposure parameter is all identical. After photometry setting, open camera electronic shutter and start exposure, quiltPhotometry (image) signal Ls is through optical male set of lenses 2, and focusedimage optical signal is on the focal plane of cmos image sensing 6. WithTime supplement optical signal Lr also open and be irradiated on the focal plane of cmos image sensor 6. After end exposure, close electronic shutter,The effect of disabling signal light Ls and supplementary light Lr simultaneously, and close and supplement radiant 4. Cmos image sensor is opened the phase at shutterBetween above-mentioned Ls and Lr optical signal are measured simultaneously, and process by camera circuitry, data handling system, it is right to save asThe measurement image " F (LsLr) " that flashlight Ls image and supplementary light Lr are common.
Eliminate alternatively supplementary light Lr and irradiate the impact on result data. In this example, by a personal computer and onSpecial-purpose software process. To measure the common measurement image " F (LsLr) " of gained flashlight Ls image and supplementary light Lr and mendThe individual element color value that fills the respective coordinates of photo measure image " F (Lr) " subtracts each other, and is eliminated and supplements the image after influence of light" F (Ls) ", is and revises the result images data of supplementing after influence of light.
Take the photograph if do not open supplementary photo-beat, keep supplementing light closed condition, carry out the original shooting process of camera.
Claims (10)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300438A (en) * | 2018-11-12 | 2019-02-01 | 青岛海信移动通信技术股份有限公司 | A kind of method and apparatus adjusting screen intensity |
| CN109916514A (en) * | 2019-03-19 | 2019-06-21 | 谱诉光电科技（苏州）有限公司 | A kind of photon injection type Dim light measurement method and device |
| CN112710616A (en) * | 2020-12-31 | 2021-04-27 | 中国电子科技集团公司第五十五研究所 | Threshold-adjustable near-range array correlation infrared sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008123767A (en) * | 2006-11-10 | 2008-05-29 | Kowa Co | Photomultiplier tube and light measurement method and apparatus using the photomultiplier tube |
| CN101464188A (en) * | 2008-12-29 | 2009-06-24 | 天津大学 | Method for improving photoelectric sensor sensibility |
| CN102564580A (en) * | 2012-02-24 | 2012-07-11 | 天津大学 | Device for improving sensitivity of image sensor and applying forming light |
| CN103163639A (en) * | 2011-12-09 | 2013-06-19 | 索尼公司 | Light detection apparatus and light detection method |
-
2016
- 2016-03-04 CN CN201610122614.6A patent/CN105590941B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008123767A (en) * | 2006-11-10 | 2008-05-29 | Kowa Co | Photomultiplier tube and light measurement method and apparatus using the photomultiplier tube |
| CN101464188A (en) * | 2008-12-29 | 2009-06-24 | 天津大学 | Method for improving photoelectric sensor sensibility |
| CN103163639A (en) * | 2011-12-09 | 2013-06-19 | 索尼公司 | Light detection apparatus and light detection method |
| CN102564580A (en) * | 2012-02-24 | 2012-07-11 | 天津大学 | Device for improving sensitivity of image sensor and applying forming light |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300438A (en) * | 2018-11-12 | 2019-02-01 | 青岛海信移动通信技术股份有限公司 | A kind of method and apparatus adjusting screen intensity |
| CN109300438B (en) * | 2018-11-12 | 2020-07-10 | 青岛海信移动通信技术股份有限公司 | Method and equipment for adjusting screen brightness |
| CN109916514A (en) * | 2019-03-19 | 2019-06-21 | 谱诉光电科技（苏州）有限公司 | A kind of photon injection type Dim light measurement method and device |
| CN112710616A (en) * | 2020-12-31 | 2021-04-27 | 中国电子科技集团公司第五十五研究所 | Threshold-adjustable near-range array correlation infrared sensor |
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| CN105590941B (en) | 2018-12-28 |
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