CN105529451A - Preparation method for porous monatomic silicon - Google Patents
Preparation method for porous monatomic silicon Download PDFInfo
- Publication number
- CN105529451A CN105529451A CN201510953072.2A CN201510953072A CN105529451A CN 105529451 A CN105529451 A CN 105529451A CN 201510953072 A CN201510953072 A CN 201510953072A CN 105529451 A CN105529451 A CN 105529451A
- Authority
- CN
- China
- Prior art keywords
- silicon
- porous
- preparation
- soft
- elemental silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 230000009467 reduction Effects 0.000 claims abstract description 5
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 3
- 239000011856 silicon-based particle Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 229910021426 porous silicon Inorganic materials 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052749 magnesium Inorganic materials 0.000 abstract description 7
- 239000011777 magnesium Substances 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000004964 aerogel Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 235000014676 Phragmites communis Nutrition 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010902 straw Substances 0.000 description 2
- 241000195493 Cryptophyta Species 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000006253 efflorescence Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 206010037844 rash Diseases 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention discloses a preparation method for porous monatomic silicon, relating to the technical field of a battery material. The monatomic silicon is obtained by taking soft silicon as a raw material and magnesium powder as a reducing agent and carrying out reduction in an inert environment, wherein the grain size of the soft silicon is 1 to 10 micrometers, the specific surface area is 180-230m<2>/g, and the porous monatomic silicon has a porous hollow structure. According to the preparation method, the soft silicon is taken as the raw material and has ellipsoidal appearance; compared with solid silicon dioxide sphere used in the method, magnesium can easily enter the interior of porous silicon dioxide when the soft silicon reacts the magnesium; moreover, with the adoption of heating according to temperature regions, more uniform heating is achieved; and compared with aerogel, the porous silicon structure is preserved better and more stably, and the wall thickness of the porous silicon can be maintained over 100 nanometers.
Description
Technical field:
The present invention relates to battery material technical field, be specifically related to a kind of preparation method of porous elemental silicon.
Background technology:
At present, along with mobile electronic equipment to high power capacity, long-life batteries demand growing, the performance of people to lithium ion battery is had higher requirement.Capacity of lithium ion battery is on the low side has become a bottleneck of restriction battery industry development, and the negative material finding more height ratio capacity has become an important development direction in battery material field.Current commercialization negative material is carbon, and since lithium ion battery commercialization, the research of material with carbon element obtains significant progress, close to the theoretical value of 372mAh/g, is difficult to the space having lifting again.Thus find and substitute the negative material of carbon and become an important developing direction.In numerous selectable negative material, silicon has higher specific capacity (theoretical value: 4200mAh/g) and lower removal lithium embedded voltage because of it and gets most of the attention.
But because elemental silicon change in volume higher than 300%, and can produce efflorescence material phenomenon in charge and discharge process, cause capacity to reduce rapidly, the internal resistance of cell increases suddenly, thus limit its application in field of lithium ion battery.Porous elemental silicon inside has pore passage structure, and relative to the solid elemental silicon of same particle diameter, according to there being higher specific area, density is lower.Inner space may be used for alleviating elemental silicon volumetric expansion in charge and discharge process.
Production porous elemental silicon has very important significance for lithium cell cathode material, and the method that tradition prepares porous elemental silicon has anodic attack method, stain etch, spark-discharge method, hydrothermal etching, pulsed etching method etc.The aperture of porous elemental silicon surface corrosion prepared by these methods is less, and between several nanometer to tens nanometers, and longitudinal degree of depth of etch pit is lower, can not meet the requirement of lithium cell negative pole material.Utilize magnesium thermit by reed, straw, the reducing silica in silicon ball algae etc. becomes porous elemental silicon, good effect is achieved on electrochemistry cycle performance, but these discarded object impurities such as reed, straw are more, especially inorganic salts, amorphous carbon etc., during volume production, be difficult to removing.The nano simple substance silicon of the preparation such as aeroge, although have loose structure, wall thickness is limited, easily caves in actual applications.
Summary of the invention:
Technical problem to be solved by this invention is to provide a kind of reduces fully, technical process is simple and have the preparation method of the porous elemental silicon of bending pore passage structure.
Technical problem to be solved by this invention adopts following technical scheme to realize:
A preparation method for porous elemental silicon, with soft silicon for raw material, magnesium powder is reducing agent, and in inert environments, reduction obtains porous elemental silicon;
Described soft silicon particle diameter is 1-10um, and specific area is 180-230m
2/ g and there is porous hollow.
Described porous elemental silicon particle diameter is 1-10um, and wall thickness is 50-150nm.
A kind of preparation method of porous elemental silicon; concrete steps are: first soft silicon and magnesium powder are mixed, then are added by mixture in iron crucible with cover, then crucible are placed in the atmosphere furnace of argon shield; in 600-700 DEG C, step heat preservation 2-7h, namely obtain porous elemental silicon finally by salt acid attack.
Operation principle of the present invention:
With particle diameter at 1-10um, specific area is 180-230m
2/ g and the soft silicon with porous hollow is raw material, adopt a point warm area insulation magnesium reduction process, porous silicon and magnesium powder are mixed, be placed in atmosphere furnace and calcine, regulate calcining heat, heat stepwise, makes the elemental silicon in microballoon fully reduce.This technical process is simple, be easy to operation controls, and prepared elemental silicon has bending pore passage structure.
The invention has the beneficial effects as follows: the present invention is with particle diameter at 1-10um, and specific area is 180-230m
2/ g and the soft silicon with porous hollow is raw material, its profile is elliposoidal, relative to the solid silica spheres of use, when soft silicon and reactive magnesium, magnesium can be easy to the inside entering into porous silica, and adopts a point warm area heating, make reaction more even, relative to aeroge, it is more intact and stable that Porous Silicon structures is preserved, and the wall thickness of porous silicon can remain on more than 100nm.
Accompanying drawing illustrates:
Fig. 1 is the SEM shape appearance figure of the soft silicon of raw material;
Fig. 2 is that at 600 DEG C, be incubated 1h, 620 DEG C of insulation 2h, the samples after 650 DEG C of insulation 2h, through the porous silicon SEM shape appearance figure that overpickling prepares with the soft silicon of 30.48g and 25.46g magnesium powder for raw material;
Fig. 3 is that the sample be incubated 4h at 650 DEG C after, through the porous silicon SEM shape appearance figure that overpickling prepares with the soft silicon of 61.04g and 52.39g for raw material;
Fig. 4 is that at 600 DEG C, be incubated 1h, 620 DEG C of insulation 2h, the samples after 650 DEG C of insulation 3h, through the porous silicon SEM shape appearance figure that overpickling prepares with the soft silicon of 167.82g and 142.56g magnesium powder for raw material;
Fig. 5 is with the soft silicon of 110.39g and 93.77g magnesium powder for raw material, and the samples after 650 DEG C of insulation 6h, through the porous silicon SEM shape appearance figure that overpickling prepares.
Embodiment:
The technological means realized to make the present invention, creation characteristic, reaching object and effect is easy to understand, below in conjunction with specific embodiment, setting forth the present invention further.
Embodiment 1
With the soft silicon of 30.48g and 25.46g magnesium powder for raw material, at 600 DEG C, be incubated 1h, 620 DEG C of insulation 2h, the samples after 650 DEG C of insulation 2h, prepare porous silicon through overpickling.As seen from Figure 2, the porous silicon after reduction maintains the loose structure of raw material well, and compared with raw material, there is the trend of expansion in hole.
Embodiment 2
With the soft silicon of 61.04g and 52.39g for raw material, the sample be incubated 4h at 650 DEG C after, prepares porous silicon through overpickling, and as seen from Figure 3, the Porous Silicon structures part after a step reduction is caved in.
Embodiment 3
With the soft silicon of 167.82g and 142.56g magnesium powder for raw material, at 600 DEG C, be incubated 1h, 620 DEG C of insulation 2h, the samples after 650 DEG C of insulation 3h, prepare porous silicon through overpickling.Find out from accompanying drawing 4, the aperture of gained porous silicon is about 100-200nm, and porosity is very high, and the wall thickness of elemental silicon is less than 100nm, and duct is curve.
From above case study on implementation, the present invention for silicon source, utilizes magnesium thermit to prepare skeleton shape porous elemental silicon with soft silicon; The particle diameter of porous silicon is at 3 microns, and products therefrom maintains the pore passage structure of raw material substantially, and wall thickness, at about 100nm, through removal of impurities process, can obtain porous elemental silicon product.By the porous elemental silicon material regulating temperature processing procedure and material rate can obtain tactical rule.
More than show and describe general principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is defined by appending claims and equivalent thereof.
Claims (3)
1. a preparation method for porous elemental silicon, is characterized in that: with soft silicon for raw material, and magnesium powder is reducing agent, and in inert environments, reduction obtains porous elemental silicon;
Described soft silicon particle diameter is 1-10um, and specific area is 180-230m
2/ g and there is porous hollow.
2. the preparation method of a porous elemental silicon, it is characterized in that, concrete steps are: first soft silicon and magnesium powder are mixed, again mixture is added in iron crucible with cover, then crucible is placed in the atmosphere furnace of argon shield, in 600-700 DEG C, step heat preservation 2-7h, namely obtain porous elemental silicon finally by salt acid attack;
Described soft silicon particle diameter is 1-10um, and specific area is 180-230m
2/ g and there is porous hollow.
3. the preparation method of porous elemental silicon according to claim 1 and 2, is characterized in that: described porous elemental silicon particle diameter is 1-10um, and wall thickness is 50-150nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510953072.2A CN105529451A (en) | 2016-03-07 | 2016-03-07 | Preparation method for porous monatomic silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510953072.2A CN105529451A (en) | 2016-03-07 | 2016-03-07 | Preparation method for porous monatomic silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105529451A true CN105529451A (en) | 2016-04-27 |
Family
ID=55771545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510953072.2A Pending CN105529451A (en) | 2016-03-07 | 2016-03-07 | Preparation method for porous monatomic silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105529451A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684364A (en) * | 2017-01-26 | 2017-05-17 | 南京大学 | Nano porous material and preparation method thereof |
| US11069885B2 (en) | 2017-09-13 | 2021-07-20 | Unifrax I Llc | Silicon-based anode material for lithium ion battery |
| CN114074942A (en) * | 2021-11-17 | 2022-02-22 | 青岛科技大学 | Method for preparing simple substance silicon by using joule heat |
| US20230086351A1 (en) * | 2021-09-17 | 2023-03-23 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing negative electrode active material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208634A (en) * | 2011-05-06 | 2011-10-05 | 北京科技大学 | Porous silicon/carbon composite material and preparation method thereof |
| CN102976341A (en) * | 2012-11-21 | 2013-03-20 | 蚌埠鑫源石英材料有限公司 | Preparation method of hollow silicon dioxide spherical powdery material |
| CN105070890A (en) * | 2015-07-20 | 2015-11-18 | 北京化工大学 | Titanium oxide-coated porous hollow silicon ball composite electrode material and preparation method therefor |
-
2016
- 2016-03-07 CN CN201510953072.2A patent/CN105529451A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208634A (en) * | 2011-05-06 | 2011-10-05 | 北京科技大学 | Porous silicon/carbon composite material and preparation method thereof |
| CN102976341A (en) * | 2012-11-21 | 2013-03-20 | 蚌埠鑫源石英材料有限公司 | Preparation method of hollow silicon dioxide spherical powdery material |
| CN105070890A (en) * | 2015-07-20 | 2015-11-18 | 北京化工大学 | Titanium oxide-coated porous hollow silicon ball composite electrode material and preparation method therefor |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684364A (en) * | 2017-01-26 | 2017-05-17 | 南京大学 | Nano porous material and preparation method thereof |
| CN106684364B (en) * | 2017-01-26 | 2020-04-24 | 南京大学 | Nano porous material and preparation method thereof |
| US11069885B2 (en) | 2017-09-13 | 2021-07-20 | Unifrax I Llc | Silicon-based anode material for lithium ion battery |
| US11652201B2 (en) | 2017-09-13 | 2023-05-16 | Unifrax I Llc | Silicon-based anode material for lithium ion battery |
| US12132193B2 (en) | 2017-09-13 | 2024-10-29 | Unifrax I Llc | Silicon-based anode material for lithium ion battery |
| US20230086351A1 (en) * | 2021-09-17 | 2023-03-23 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing negative electrode active material |
| CN114074942A (en) * | 2021-11-17 | 2022-02-22 | 青岛科技大学 | Method for preparing simple substance silicon by using joule heat |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103956473B (en) | A kind of CuO-Cu2O/graphene nanocomposite material and preparation method thereof | |
| Zhao et al. | Thermal induced strain relaxation of 1D iron oxide for solid electrolyte interphase control and lithium storage improvement | |
| CN103236520B (en) | Preparation method of lithium ion battery silicon oxide/carbon composite negative pole material | |
| CN108493438A (en) | A kind of lithium ion battery SiOxBase composite negative pole material and preparation method thereof | |
| CN103000906B (en) | Preparation method of foamy copper/carbon nanophase composite negative electrode material for lithium ion battery | |
| CN103236534B (en) | A kind of preparation method of lithium ion battery silicon oxide/carbon composite negative pole material | |
| Ma et al. | Self-organized sheaf-like Fe 3 O 4/C hierarchical microrods with superior lithium storage properties | |
| WO2018161742A1 (en) | Nanoporous copper-zinc-aluminum shape memory alloy and preparation method and application thereof | |
| CN105680013A (en) | Preparation method for silicon/graphite/carbon composite negative electrode material of lithium ion battery | |
| CN105529451A (en) | Preparation method for porous monatomic silicon | |
| CN109860593A (en) | A kind of iron-nickel sulfide and preparation method thereof and sodium-ion battery using the same as negative electrode | |
| CN107464923A (en) | A kind of compound high-capacity lithium ion cell material of nano zine oxide/porous carbon in situ and preparation method thereof | |
| Zhou et al. | Optimizing the function of SiOx in the porous Si/SiOx network via a controllable magnesiothermic reduction for enhanced lithium storage | |
| Mao et al. | 3D highly oriented metal foam: a competitive self-supporting anode for high-performance lithium-ion batteries | |
| Dong et al. | Rational design of hollow Ti2Nb10O29 nanospheres towards High-Performance pseudocapacitive Lithium-Ion storage | |
| CN106276910A (en) | A kind of lithium ion battery low temperature graphite cathode material preparation method | |
| CN106207150A (en) | A kind of atomizing freeze drying prepares the method for lithium cell negative pole material lithium titanate | |
| CN105489885B (en) | A kind of rodlike cobaltosic oxide of multi-pore micron and the preparation method and application thereof | |
| Deng et al. | Silicon anode modification strategies in solid-state lithium-ion batteries | |
| CN109473634B (en) | Solid-phase co-thermal synthesis of molybdenum diselenide/nitrogen-doped carbon rods | |
| CN105070897B (en) | Lithium titanate material and preparation method thereof, the electrode plates using it, battery | |
| CN105322161A (en) | Carbon-supported lithium vanadate and preparation method and application thereof | |
| CN112186151A (en) | Cobalt phosphide nanoparticle inlaid carbon nanosheet array material and preparation and application thereof | |
| CN105047915B (en) | Mesoporous-macroporous nanofiber Li2FeSiO4 cathode active material | |
| Chen et al. | Advanced electrode materials for lithium-ion battery: Silicon-based anodes and Co-less-Ni-rich cathodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160427 |