CN105511065B - Illumination optics, lighting system, projection exposure apparatus and assembly manufacture method - Google Patents
Illumination optics, lighting system, projection exposure apparatus and assembly manufacture method Download PDFInfo
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- 238000005286 illumination Methods 0.000 title claims abstract description 164
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
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- 230000005855 radiation Effects 0.000 claims abstract description 5
- 238000003384 imaging method Methods 0.000 claims description 148
- 230000003287 optical effect Effects 0.000 claims description 60
- 239000002086 nanomaterial Substances 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 description 16
- 210000001747 pupil Anatomy 0.000 description 14
- 230000008901 benefit Effects 0.000 description 10
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0652—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention relates to illumination optics, lighting system, the methods of projection exposure apparatus and manufacturing structured component.Illumination optics (7 for Lithographic projection exposure；28), for having guiding without beam splitter for object (12) of the light beam of the illumination light (3) of the wavelength less than 193nm from radiation source (2) in object field (4) in object plane (5), the object (12) is reflective for the illumination light (3), it is characterized in that it is designed so that at least one point for the object field (4), the light beam of the illumination light (3) makes up less than 3 ° of angle to the incident direction (13) of energy weighting light and the normal (14) of the object plane (5) of the object field (4).
Description
The application be the applying date be on December 3rd, 2010, application No. is 201080063805.0 (international application no PCT/
EP2010/068782), the divisional application of the application for a patent for invention of entitled " imaging optics ".
The content of U.S. Provisional Application US 61/286,066 is incorporated herein by quoting.
Technical field
The present invention relates to the illumination optics exposed for Lithographic projection, include the type imaging optics and such
The lighting system of type illumination optics, the projection exposure apparatus comprising the type lighting system are projected by the type and are exposed
The micro-structure of equipment and the manufacturing method of nanostructure component, and the micro-structure and nanostructure that are manufactured according to the type method
Component.
Background technique
From 2009/0073392 A1 of US, thrown from 2008/0170310 A1 of US, and from known to 6 894 834 B2 of US
Penetrate exposure sources.
Summary of the invention
One aspect of the present invention is related to imaging optics, allows that reflective object is imaged with high imaging quality.
In accordance with the present invention it has been found that the chief ray angle of the object field point less than 3 ° leads to the occlusion effect on reflective object
The reduction of (shading effect) avoids completely.The chief ray of object field point is defined as in each object field point and image optics
Line between the pupil centre of component, even if for example since pupil obscuration (obscuration) is without actual imaging light
Imaging optics can be passed through along chief ray.The chief ray of object field point in at least half of range of entire object field
Angle is smaller than 3 °.The chief ray angle of property site is also smaller than 3 °.Chief ray angle of the invention is smaller than 2 °, can be small
It in 1 °, and particularly can be 0 °.Therefore it can avoid occurring not in the legacy system with 6 ° or 8 ° of chief ray angle
Desirable occlusion issue.Allow to change with advantageous small CD (critical dimension) imaging that reflective object is imaged to generate
Department of the Chinese Academy of Sciences's part.The maximum reflection angle of object space imaging ray in large aperture imaging optical system with chief ray angle of the present invention
As small as possible, as a result occlusion issue is minimized.Imaging optics of the invention are designed to no beam splitter (beam-
Splitter-free it) is imaged.In imaging optical path, therefore not such as in specific prior art illumination (such as in basis
In the illumination of Fig. 6 of US 6,894,834B2) use, for couple (couple in) illumination light and for pass through imaging
The beam splitter of light.Near field reflections mirror M of the invention is set in the case where meeting the following conditions:
P (M)=D (SA)/(D (SA)+D (CR))≤0.9
In party's formula, D (SA) is the sub-aperture diameter of the light shafts that issue from object field point at reflecting mirror M, and D (CR)
For maximum distance of the chief ray on the surface of reflecting mirror M for the effective object field being imaged by imaging optics, in optical system
It is measured in the reference planes of system.Reference planes can be the symmetrical plane or meridian plane of imaging optics.The definition of parameter P (M)
It is consistent with the parameter P (M) that illustrates in 20,09/,024 164 A1 of WO.
In plane on the scene, P (M) is 0.In pupil plane, P (M) is 1.
In the embodiment of 6 894 834 B2 of US, for all reflecting mirrors, P (M) is greater than 0.9.
At least one reflecting mirror of imaging optics can have no more than 0.8, be not more than 0.7, no more than 0.65 or
Even no greater than 0.61 P (M) value.Several reflecting mirrors can also have less than 0.9, less than 0.8 or even less than 0.7 P (M)
Value.
The near field reflections mirror of the type can be used for aberration correction.Especially in field (extended) of expansion, near field is anti-
Penetrating mirror allows the aberration correction on the field entirely expanded.Particularly, telecentricity correction can be performed by near field reflections mirror.Image optics
The diminution ratio of the imaging scale of component, the especially imaging from object field to image field can be 2x, 3x or even 4x.Imaging ratio
Example can absolutely be less than 8x.Numerical aperture near image field is in the case where restriction, and sufficiently small imaging scale leads to object field
Corresponding biggish numerical aperture nearby, and lead to corresponding lesser object field in the image Held dimension of restriction.This can be used for
Reduce masking, and the width of the through-hole in the reflecting mirror especially for reducing imaging optics.
Imaging optics, which can have, is absolutely less than 8x, be less than 6x, be less than 5x, be less than 4x, less than 3x and can be for 2x
Drawdown ratio.Absolutely small imaging scale is easier the guidance of the light beam in imaging optics.The image field of imaging optics
Size can be greater than 1mm2, and it can be particularly greater than 1mm x 5mm, 5mm x 5mm can be greater than, and can in particular 10mm
X 10mm or 20mm x20mm.If imaging optics are used for photoetching purpose, it ensure that high productive capacity (throughput).
If detection of the imaging optics for mask or the chip being exposed, above-mentioned " image field " are used as on mask or on chip
The field to be detected.In the additional application field of imaging optical system for testing goal, therefore above-mentioned image field is detection
Object field.
First reflecting mirror of the imaging optics can be one of the first masking reflection microscope group according to another aspect,
Point；The through-hole of second reflecting mirror can be used for coupled illumination light.Similarly, last anti-in the imaging optical path between object field and image field
The through-hole passed through for imaging ray can be had by penetrating mirror.Final reflection mirror in imaging optical path is so as to being another masking reflecting mirror
A part of group, can lead to the large-numerical aperture of the image space of imaging optics.With it is continuous or it is closed (in other words
Say, through-hole be not provided) reflecting mirrors of the imaging optics of reflecting surface allows the telecentricity errors of correction imaging optical component.
At least one reflecting mirror for being equipped with the type on continuous reflection surface may be arranged near field, and be disposed particularly in image optics
In the region of the intermediate image plane of component.Imaging optics can be equipped with the first masking reflection microscope group and imaging is imaged
The second masking reflection microscope group into image field, and it is positioned there between without other masking reflection microscope groups.Equipped at
As at least one reflecting mirror of the closing reflecting surface of the reflection of light can have parameter P (M) as defined above, parameter P (M)
0.9 can be not more than, less than in 0.8, be not more than 0.7, be not more than 0.65, and can be even only 0.61.The near field of the type is anti-
The advantages of penetrating mirror is consistent with the above.
According to another aspect, only with +/- 1 order of diffraction and/or more high diffracting grade for being imaged.
Only with +/- 1 order of diffraction and/or the imaging of more high diffracting grade, allow for be used in the region for generating Zero-order diffractive
Coupled illumination light.Using at least +/- 1 order of diffraction and the even higher order of diffraction (if necessary), due to not using zero
Grade diffraction, generates the image with good contrast.Particularly, this is suitable for only +/- 1 order of diffraction for being imaged.
Particularly, when imaging optical system of the invention is installed in pupil-masking optical system, it is of the invention at
As optical system can particularly have through-hole (through-opening or through-bore).Including the type reflecting mirror
Imaging optics pupil plane in, exist be not intended to imaging imaging light beam interior zone.In this region,
It can arrange the coupled mirrors of illumination optics.
Imaging optics of the invention may include the combination of the feature of above-mentioned imaging optical system.With the illumination light department of the Chinese Academy of Sciences
Part (wherein, illumination light is guided via small illumination numerical aperture to reflective object with small incidence angle) cooperation this seed type at
As reaching resolution limit in optical component, without arranging multipole and/or using the incidence angle of maximum possible inclination
Illumination, do not need bipolar or quadrupole illuminating particularly.In addition, for the different structures on reflective object to be imaged
Arrangement does not need to convert between different multi-polar illuminations arrangement.Reflective object can be exposed to static illumination, and can be used to
Few diaphragm illumination and/or the illumination of usable varifocus objective.Illumination optics are designed to no special pupil shape
At component.Particularly, illumination optics are designed to do not have facet reflecting mirror (faceted mirror).
First reflecting mirror in the imaging optical path between the object field and the image field can be recessed according to another aspect,
, and second reflecting mirror in the imaging optical path between the object field and the image field can be it is convex.This design promotees
Into the illumination light being irradiated on reflective object with very low energy weighting incidence angle coupling.
The object of the present invention is to provide the illumination optics exposed for Lithographic projection, in order to obtain high quality graphic
And ensure the illumination of reflective object.
According to the present invention, which is realized by the illumination optics device exposed for Lithographic projection, the light optics
Component is used for the nothing of object of the light beam of the illumination light with the wavelength less than 193nm from radiation source in object field into object plane
Beam splitter guidance, the object is reflective for the illumination light, it is characterised in that it is designed so that for described
The energy of at least one point of object field, light beam to the object field of the illumination light weights the incident direction of light and the object is put down
The normal in face makes up less than 3 ° of angle.
The incident direction of energy weighting of the invention or central ray to a little less, can enter object field with about 0 °
Centered on firing angle.At this point, illuminating ray is irradiated on reflective object with low incidence angle, occur during imaging so that avoiding
Occlusion issue.The advantage of acquisition with illustrate above with respect to imaging optical system of the invention it is consistent.Energy weights light
Angle between incident direction and the normal of object plane is smaller than 2 °, less than 1 °, and can just be 0 °.Illumination light harness its
He can have biggish incidence angle by energy weighting light.The guidance of the light beam of illumination light may begin to be approximately parallel under object field first
The direction of the guidance of the imaging ray of trip or approximately perpendicular to object field downstream imaging ray guidance direction, if vertically
Imaging ray is guided, then said two devices are referred to as " vertically into " and " horizontally entering into " of illuminating ray.It substitutes light optics
Component is exposed for Lithographic projection, and illumination optics of the invention can also be used for checking the detection system of object flaw.Especially
Ground, detection of the detection system of the type for reticle (reticle) and/or chip.
In above-mentioned illumination optics, the light beam of the illumination light to the maximum incident angle of the object field can be made to be less than
10°.The maximum incident angle greatly reduces blocking for the structure on reflective object.Moreover, if being arranged on reflective object
Reflectance coating, which ensure that the advantageous high reflectance of reflective object, and thereby, it is ensured that illumination light or the high of imaging pass through
Amount.Maximum incident angle is smaller than 8 °, is smaller than 6 °, and is also smaller than 5 °.
In above-mentioned illumination optics, the illumination optics are last in the illumination path before the object field
Reflecting mirror may include through-hole.Imaging that is that the design of the light optics reflecting mirror allows to be issued by object field and being reflected by object
Line is conducted through the through-hole of the final reflection mirror (that is, coupled mirrors) of illumination light.The type illumination is also referred to as dark field and shines
It is bright.In this case, object can be exposed only to the light outside imaging aperture.Particularly, when object edge is imaged, dark-ground illumination
Better than other traditional lightings.Moreover, low-angle between the center incident light of illumination light and the normal of object field is above-mentioned
Advantage can be combined with the advantages of traditional and unsheltered imaging optics.Particularly, when illumination optics are for examining
When in examining system, dark-ground illumination can be advantageous, because the type illumination allows impurity, scratch or dust in object field with non-
Often high contrast imaging.
The advantages of including the lighting system of above-mentioned imaging optics and above-mentioned illumination optics with above with respect to this hair
Bright imaging optics are consistent with the advantage illustrated by illumination optics of the invention.
In said lighting system, the coupled mirrors of the illumination optics can be via through-hole by the illumination light
One be coupled into the reflecting mirror of the imaging optics.The through-hole of coupled illumination light can limit imaging optics simultaneously
The pupil obscuration of part.
In said lighting system, the coupled mirrors of the illumination optics may include the imaging described
The through-hole passed through in the imaging optical path of imaging optics.Its advantage with above with respect to the illumination optics in the object field
The final reflection mirror in illumination path before includes that advantage illustrated by through-hole is consistent.
Include said lighting system projection exposure apparatus, using the projection exposure apparatus manufacturing method the advantages of with
On the advantages of illustrating about lighting system of the invention it is consistent.Light source can be EUV (extreme ultraviolet) light source, such as (laser generates LPP
Plasma) light source or GDP (plasma that gas discharge generates) light source.Imaging optics of the invention can be not only
For in projection exposure apparatus, it can also be used in detection device, especially for detecting reflective type photomask mask or for detecting
The wafer substrate being exposed.To which the above-mentioned image field of imaging optics is the detection object field of detection device.
Detailed description of the invention
The figure embodiment that the present invention will be described in detail will be passed through below, in which:
Fig. 1 is the imaging optics with the projection exposure apparatus shown with meridional section, throwing for EUV lithography
Penetrate the schematic diagram of exposure sources；
Fig. 2 is will be by throwing in the region of the reflective object of the reticle form of projection exposure image, according to Fig. 1
That penetrates the illumination light of exposure sources and the optical path of imaging puts heavy in section another schematic diagram (" vertically into "), with Fig. 1 phase
Than disproportionate；
Fig. 3 is the illumination of the optical module of the deformation of illumination optics similar to Fig. 2, by projection exposure apparatus
The schematic diagram (" horizontally entering into ") of the substitution guidance of light；
Figure 4 and 5 are for the deformation according to the imaging optics of the projection exposure apparatus of Fig. 1；
Fig. 6 is in object area and in the projection exposure apparatus as in region, Fig. 1 mode at chip
The high-level schematic of optical path；And
Fig. 7 is the view of the optical path relationship similar to Fig. 6, object substitution illumination and the substitution picture being adapted to it.
Specific embodiment
The projection exposure apparatus 1 that Lithographic projection for manufacturing micro-structure or nanostructure component exposes has for illuminating
The light source 2 of light or imaging 3.Light source 2 is EUV light source, is generated between such as 5nm and 30nm, especially 5nm and 10nm it
Between wave-length coverage in light.Particularly, light source 2 can be the light source of the wavelength with 6.9nm or 13.5nm.Other EUV wavelength
It is also to be contemplated that.For photoetching and there are other available wavelength of suitable sources, for the photograph guided in projection exposure apparatus 1
Mingguang City and imaging 3 are contemplated that.It very diagrammatically show very much the optical path of illumination light 3 in Fig. 1.
Illumination optics 7 are used for will be in the object field 4 that the illumination light 3 of light source 2 guides into object plane 5.By light source
Or the illumination light 3 that radiation source 2 issues is assembled by condenser 6 first.Intermediate focus point 8 (focus) is typically disposed at condenser 6
In the illumination path in downstream.Illumination path is also designed to no intermediate focus point 8 so that illumination light 3 in the form of collimation from
Open condenser.The spectral filtering of illumination light 3 can occur in the region of condenser 6 or intermediate focus point 8.Illumination optics 7
First reflecting mirror 9 be arranged in the illumination path in 8 downstream of intermediate focus point.First light optics reflecting mirror 9 can
For field facet mirror.Second reflecting mirror 10 of illumination optics 7 is arranged in first 9 downstream of light optics reflecting mirror
In illumination path.Second light optics reflecting mirror can be pupil facet reflecting mirror.
Alternatively, it is contemplated that using no facet reflecting mirror illumination optics.The type illumination optics can have
With the consistent illumination path of illumination path according to the illumination optics 7 of Fig. 1.
The coupled mirrors 11 of illumination optics 7 are arranged in the illumination path in second 10 downstream of light optics reflecting mirror
In.Coupled mirrors 11 can be by the consistent supporter of supporter learnt with Fig. 1 k, 11 and 1m by 2006/069725 A of WO
Support.
11 guiding illumination light 3 of coupled mirrors is disposed with reticle or mask form to object field 4 at object field 4
Reflective object 12.
Partial illumination optical path between condenser 6 and first light optics reflecting mirror 9 in second light optics
Partial illumination optical path intersection between reflecting mirror 10 and coupled mirrors 11.
The incident direction 13 of the energy weighting or central ray that are irradiated to the light beam of the illumination light 3 on reticle 12 is accurate
The normal 14 of ground and object plane 5 is consistent.Therefore, the angle that the incident direction 13 of energy weighting light is formed with normal 14 is less than
3 °, and in the embodiment in accordance with fig. 1, accurate is 0 °.If the design of illumination optics 7 is slightly modified, it is contemplated that
Energy weight light incident direction 13 and normal 14 between other angles, such as energy weighting light incident direction 13 with
Angle between normal 14 is 2.5 °, 2 °, 1.5 °, 1 ° or 0.5 °.It is irradiated to the side of the light beam of the illumination light 3 on reticle 12
Edge light 15 (referring to Fig. 2) forms the angle less than 3 ° with normal 14.Therefore it is irradiated to the light of the illumination light 3 on reticle 12
Beam has the maximum incident angle less than 3 ° in object field 4.
For guiding illumination light 3 and by reticle 12 imaging to as in the image field 17 in plane 18 with projection optics portion
The imaging optics 16 of part form are disposed in the optical path in 4 downstream of object field of projection exposure apparatus 1.In imaging optics
In 16, as the angle of about 15 ° of plane 18 and the formation of object plane 5.The angle promotes imaging optics 16 in entire image field
On 17 correct image error in terms of, particularly correction telecentricity and aberration in terms of design.
Occurred on the surface of the substrate in the form of chip 19 by the imaging of imaging optics 16.12 He of reticle
Chip 19 is supported by supporter (not shown).Projection exposure apparatus 1 is scanning exposure machine (scanner).When projection exposure apparatus 1
When in use, on the one hand in object plane 5, both reticle 12 and chip 19 on the other hand are scanned in as plane 18.
Projection exposure apparatus 1 using stepping exposure machine (stepper) form is also to be contemplated that, in stepping exposure machine, in chip
(in steps) moves reticle 12 on the one hand and chip on the other hand 19 step by step between 19 independent illumination.
Fig. 1 shows the optical design of the first embodiment of imaging optics 16.The figure shows sent out by central point
The optical path of the ten independent light 20 in total of imaging 3 out.
Reflecting mirror there are six being had in total according to the imaging optics 16 of Fig. 1, the list of six reflecting mirrors to start from object field 4
The sequence of the optical path of only light 20 is numbered as M1 to M6.Fig. 1 shows the calculated reflection when being designed like optical component
The reflecting surface of mirror M1 to M6.However, actually only used the part area of these reflecting mirrors (especially reflecting mirror M3, M4)
Domain, as shown in Figure 1.
Reflecting mirror M1 be it is recessed, reflecting mirror M2 be it is convex, reflecting mirror M3 be it is recessed, reflecting mirror M4 be convex, reflecting mirror M5
To be convex, reflecting mirror M6 is recessed.
Reflecting mirror M1 and M2 are respectively provided with through-hole 21,22, for passing through imaging 3.Therefore, reflecting mirror M1 and M2 is masking
Reflecting mirror.Due to this masking, the light beam of imaging 3 has interior zone in the nearly pupil area of imaging optics 16,
Without independent light 20 at the interior zone.The type freely (free) interior zone 23 be disposed in reflecting mirror M1 and M2 it
Between, normal 14 and center incident light 13 pass through the interior zone 23.Coupled mirrors 11 are arranged in the free space 23.Coupling
It closes reflecting mirror 11 and illumination light 3 is coupled into system via the through-hole 23 in the reflecting mirror M2 of imaging optics 16.
Due to masking, the chief ray of center object field point is not a part of optical path, the chief ray of the center object field point at
As the chief ray angle α in optical component 16 with 0 °.This means that the normal of the chief ray of the center object field point and object plane 5
14 are overlapped.The definition of chief ray angle α is become apparent by the illustration in Fig. 1, the illustration be when Ref. No. be 20b master
The schematic diagram of relationship when light is irradiated on the reflection mask mother matrix 12 in object field 4.Chief ray angle α is for normal 14 and through object
Angle between the chief ray 20b of 4 reflection of field.
Two reflecting mirrors M3 and M4 being arranged in the imaging optical path in the downstream reflecting mirror M2 have the reflection for imaging 3
Continuous or closed reflecting surface, in other words, they do not have through-hole.The area of imaging optical path near reflecting mirror M3 and M4
The intermediary image 24 of imaging optics 16 is arranged in domain.Therefore, reflecting mirror M3 and M4 is near field reflections mirror, and it is suitable for imagings
The telecentricity of optical component 16 corrects.
The reflecting mirror M5 and M6 being arranged in the imaging optical path of the imaging optics 16 in the downstream reflecting mirror M4 are also equipped with
Through-hole 25,26.
Therefore, reflecting mirror M5 and M6 is also the reflecting mirror of masking.Between reflecting mirror M5 and M6, in the light beam of illumination light 3
In there is also free space 27, free space 27 is the picture of free space 23.
Reflecting mirror M1 and M2 form the first masking reflection microscope group of imaging optics 16.Reflecting mirror M3 and M4 form imaging
Optical component 16 reflects microscope group without masking.Reflecting mirror M5 and M6 form the second masking reflection microscope group of imaging optics 16.
Fig. 2 is the office of the amplification of the optical path relationship of the illumination and imaging 3 before and after reflection at reticle 12
Portion's view.First reflecting mirror 9 of illumination optics 7 is arranged so that intermediate focus point 8 and relative to intermediate focus point 8
The optical path of illumination light 3 between one light optics reflecting mirror 9 is substantially parallel with the optical path of illumination light 3 in 4 downstream of object field.Cause
This, the guidance of the light beam of illumination light starts from the direction for being approximately parallel to the guidance of imaging 3 in 4 downstream of object field first.Therefore, exist
Between intermediate focus point 8 and first light optics reflecting mirror 9 of illumination optics 7, the illuminating bundle relative normal of part
14 are extended with low-angle towards object plane 5.If normal 14 extends vertically, be referred to as illumination optics 7 it is vertical into
Enter.
Fig. 3 shows the deformation of the reflecting mirror arrangement of guiding illumination light 3, is in other words the another of illumination optics 28
Embodiment.With the consistent component of the component Ref. No. having the same illustrated above by reference to Fig. 1 and 2, and no longer discuss.
In the embodiment according to Fig. 3, first reflecting mirror 29 of illumination optics 28 is relative to 8 cloth of intermediate focus point
It is set to so that the optical path of the illumination light 3 between intermediate focus point 8 and light optics reflecting mirror 29 and the imaging 3 in 4 downstream of object field
Light beam guidance it is vertical.Therefore, the part imaging beam between intermediate focus point 8 and first light optics reflecting mirror 29 at
As the beam crosses of light 3.The guidance of the light beam of illumination light 3 starts from the guidance for being approximately orthogonal to the imaging in 4 downstream of object field first
Direction.Partial illumination light in illumination optics 28, between intermediate focus point 8 and first light optics reflecting mirror 29
Beam relative normal 14 is extended with about right angle towards object plane 5.If normal 14 be it is vertical, this is referred to as illumination optics
28 horizontally enter into.
About the light beam of illumination light 3, second reflecting mirror 30 of illumination optics 28 is arranged in the same of intermediate focus point
On side.Therefore, the partial illumination light beam between first light optics reflecting mirror 29 and second light optics reflecting mirror 30 is again
The secondary beam crosses between reflecting mirror M1 and M2 with imaging 3.Coupled mirrors 11 are again arranged at second light optics
In the optical path in 30 downstream of reflecting mirror.
Light optics reflecting mirror 29,30 is arranged according to Fig. 3, causes illumination light 3 on the light optics reflecting mirror 29,30
Incidence angle is smaller, this provides the high reflectance of light optics reflecting mirror 29,30.First light optics reflecting mirror 29 can be field
Facet reflecting mirror.Second light optics reflecting mirror 30 can be pupil facet reflecting mirror.
By Fig. 4, another embodiment of imaging optics 31 is described below, alternative imaging optics 16 are used for
In projection exposure apparatus 1.With the consistent component of the component Ref. No. having the same illustrated above by reference to Fig. 1 and 2, and not
It discusses again.Fig. 4 shows three independent light 20a, 20b, the 20c issued by the three object field points separated vertically in Fig. 4
Respective optical path.Three independent light 20a, 20b, 20c (belonging to one in these three object field points) are respectively and for three objects
Three different illumination directions of site are related.Independent light 20a and 20c are two coma (comma) light at edge, and single
Only light 20b is the chief ray issued by each object field point.The chief ray, which is drawn in Fig. 4, is only used for schematical purpose,
Because they extend through the center of the pupil of imaging optics 31 and due to the central obscuration of imaging optics 31 and
It is not the actual imaging optical path of imaging optics 31.
In the imaging optical path of imaging optics 31, the first pupil plane 32 of imaging optics 31 is arranged as and object
Field 4 is adjacent.Reflecting mirror M2 is arranged between object field 4 and the first pupil plane 32.First intermediate image plane 33 is arranged in reflecting mirror
In the level (level) of through-hole 21 in M1.In optical path between reflecting mirror M2 and M3, during another pupil plane 34 is arranged in
Between as 33 downstream of plane.Another intermediate image plane 35 is arranged in the illumination path between reflecting mirror M4 and M5.Intermediate image plane
35 are arranged between reflecting mirror M4 and reflecting mirror M6.
Another pupil plane 36 is arranged in the illumination path of imaging optics 31 and about in the level of reflecting mirror M6
On.
Reflecting mirror M1 and M4 are arranged as back-to-back.Reflecting mirror M3 and M6 are also arranged as back-to-back.
Imaging optics 31 also have the first masking reflection microscope group comprising reflecting mirror M1 and M2, comprising reflecting mirror M3 and
Microscope group is reflected without masking in the subsequent of M4, and microscope group is reflected in the subsequent masking comprising reflecting mirror M5 and M6.
In imaging optics 31, reflecting mirror M1, M2, M3 and M4 are near field reflections mirror, and in other words, they have ginseng
Number:
P (M)=D (SA)/(D (SA)+D (CR))
The parameter has the value no more than 0.9.
D (SA) is the diameter of sub-aperture of the object field point at the position reflecting mirror M.D (CR) be reference planes in, effective object field
Maximum distance of the chief ray 20b on the surface of reflecting mirror M, the drawing face reference planes, that is, Fig. 4 is also imaging simultaneously
The mirror surface symmetrical plane of department of the Chinese Academy of Sciences's part 31.
Following table includes the value of the P (M) of six reflecting mirror M1 to M6 for imaging optics 31:
| Reflecting mirror | P(M) |
| M1 | 0.70 |
| M2 | 0.67 |
| M3 | 0.76 |
| M4 | 0.61 |
| M5 | 0.97 |
| M6 | 0.98 |
In imaging optics 31, object plane 5 with as plane 18 it is parallel relative to each other.
Here is comprising by optical design software CodeThe obtained optical design data for imaging optics 31
Table.
The reflecting mirror M1 to M6 of imaging optics 31 is cannot be by free shape surface that rotational symmetry function describes.At
As other designs (wherein free shape reflecting surface of at least one of reflecting mirror M1 to M6 with the type) of optical component 31
It is also to be contemplated that.
The free shape surface of the type can be obtained by the rotational symmetry plane of reference.Throwing for microlithographic projection exposure apparatus
The type free shape surface for penetrating the reflecting surface of the reflecting mirror of optical system discloses in US2007/0058269A1.
Free shape surface can mathematically be described by following equation:
Wherein
Z is free shape surface in point x, y (x2+y2=r2) at sagittal heights.
C is the constant corresponding to corresponding aspherical vertex curvature.K corresponds to the corresponding aspherical constant of the cone.CjFor
Monomial XmYnCoefficient.C, k and CjValue will be typically based on the reflecting mirror in projection optics component 7 expectation optical characteristics it is true
It is fixed.The level m+n of monomial can be selected arbitrarily.Higher level monomial can lead to the projection optics for allowing preferable aberration correction
Component, however calculate therefore more complicated.M+n can be used 3 and greater than 20 between value.
It is also recognized that for example, by optical design software CodeHandbook in the zernike polynomial that illustrates
(Zernike polynomials) mathematically describes free shape surface.Alternatively, it can be used such as Bezier (B é zier) bent
The two-dimensional spline surface description free shape surface of line or non-uniform rational B-spline (NURBS).It two-dimensional spline surface for example can be by
The grid of point in x/y plane and the description of associated z value, or described by these points and associated slope.Dependent on spline surfaces
Type, function by using such as multinomial or in terms of continuity and defferentiality with specific feature mesh point it
Interpolation and obtain whole surface.Its example is analytical function.
Reflecting mirror M1 to M6 has the multilayer reflective layers of the reflection of optimization incidence EUV illumination light 3.When independent light 20 irradiates
When to mirror surface, for the incidence angle of independent light 20 closer to vertical incidence, it is better to reflect.
The vertex curvature of each optical surface of first of below table comprising optical module and aperture diaphragm falls
Number (radius), and the distance value (thickness) of the z distance corresponding to the adjacent elements in the optical path for starting from object plane.Second table
Lattice include above for the monomial X in the free shape surface equation of reflecting mirror M1 to M6mYnCoefficient Cj, wherein Nradius
For normalization factor.Third table includes distance (unit mm), along this apart from each reflecting mirror from reflecting mirror Reference Design
Eccentric (Y- is eccentric) and rotation (X- rotation).This corresponds to the parallel translation in the direction y- executed when design free shape surface
With the rotation about x- axis.Tilt angle unit is degree.
Between object field 4 and image field 17, imaging optics 31 have the minification of 2x.The object space of imaging optics 31
Numerical aperture is 0.15.Object field 4 has the size of 20mm x 20mm.The image-side numerical aperture of imaging optics 31 is 0.3.
Image field 17 in imaging optics 31 has the size of 10mm x 10mm.
Based on Fig. 5, another embodiment of imaging optics 37 is described below, alternative imaging optics 16 are used for
In projection exposure apparatus 1.With the consistent component of the component Ref. No. having the same illustrated above by reference to Fig. 1 and 2, and not
It discusses again.
The explanation of imaging optical path comprising independent light 20a, 20b, 20c is consistent with according to the explanation of Fig. 4.
In imaging optics 37, object plane 5 and as plane 18 is parallel to each other.
Fig. 6 and 7 outline two of coupled illumination light 3 substantially may, the wherein side of the incident central ray 13 of illumination light 3
To when being irradiated on reticle 12, substantially insignificant angle is formed with the normal 14 of object plane 5.Imaging in Fig. 6 and 7
Light is denoted as 3 ', to allow to distinguish the imaging 3 ' and illumination light 3.
In the illumination example according to Fig. 6 and 7, when illumination light 3 is reflected by coupled mirrors 11 and is irradiated to reticle
When on 12, the direction of the incident central ray 13 of the normal 14 and light beam of illumination light 3 of object plane 5 is overlapped.
Fig. 6 is shown when illumination light 3 is coupled to relationship when being irradiated on reticle 12, the relationship with above by reference to
The relationship consistency that Fig. 1 to 5 illustrates.In this case, coupled mirrors 11 are arranged in the free zone inside the light beam of imaging 3 '
In domain 23.Inside (inner) numerical aperture of the radiation beam of imaging 3 ' in free space 23 is slightly larger than in coupled mirrors
The numerical aperture of the light beam of the illumination light 3 on reticle 12 is irradiated in after reflecting at 11.Had according to the imaging optics of Fig. 6
There is image-side numerical aperture NA 'Abb.In the illumination example according to Fig. 6, mask mother is irradiated in after reflecting at coupled mirrors 11
Version 12 on illumination light 3 light beam have small maximum incident angle, the maximum incident angle be for example smaller than 5 °, less than 4 °, be less than
3 °, less than 2 ° or less than 1 °.Maximum incident angle is the normal 14 by one of independent light of light beam of illumination light 3 and object plane 5
The maximum angle of formation.The light beam of illumination light 3 can also be substantially parallel independent light be irradiated on reticle 12.
Fig. 7 shows another illumination of the reticle 12 opposite with the illumination according to Fig. 6.According to the coupling optical of Fig. 7
The coupled mirrors 38 (other aspects are consistent with the coupled mirrors 11 of above-described embodiment) of component have annular reflection surface 39
(plan view illustrated by the illustration of Fig. 7 is shown).Annular reflection surface 39 surrounds the interior bone 40 of coupled mirrors 38.
In the illumination example according to Fig. 7, reticle 12 be exposed to illumination light 3 annular (ring-shaped or
Annular) light beam.The inside free space 41 for being irradiated in the light beam of the illumination light 3 in coupled mirrors 38 has slightly larger than logical
The width (from the point of view of the illumination beam of the illumination light 3) of the projection in hole 40, so as to be coupled reflecting mirror 38 complete for the light beam of illumination light 3
Reticle 12 is reflexed to entirely.
Alternative above-mentioned imaging optical system is for the imaging optics (being not shown in Fig. 7) in projection exposure apparatus 1
The object-side numerical aperture having is slightly less than the object for limiting the rim ray of the inner boundary of the free space 41 of light beam of illumination light 3
Side numerical aperture.The object-side numerical aperture of imaging 3 ' be so it is small so that imaging 3 ' can pass through through-hole 40 completely, in other words
It says, when imaging 3 ' passes through the through-hole 40 of coupled mirrors 38, without the loss of imaging 3 '.
In image space, also there is numerical aperture NA ' according to the imaging optics of Fig. 7Abb。
In the illumination example according to such as Fig. 6, it can be used only by reticle 12 (that is, structure to be imaged)
At least +/- 1 order of diffraction generate imaging 3 ' be imaged.In this case, therefore Zero-order diffractive is not used in imaging.
All embodiments of above-mentioned imaging optics are respectively provided with the reflecting mirror M of at least one P (M)≤0.9.
Micro-structure or nanostructure component are manufactured as follows by projection exposure apparatus 1: in the first step, reticle is set
12 and chip 19.Then, by projection exposure apparatus 1 by the photosensitive layer on the arrangement projects on reticle 12 to chip 19.
Then develop photosensitive layer, with the micro-structure or nanostructure formed on chip 19, to obtain for example with high integrated circuit shape
The microstructure elements of the semiconductor subassembly of formula.
Claims (13)
1. the illumination optics (7 for Lithographic projection exposure；28), for having the illumination light (3) of the wavelength less than 193nm
Object (12) of the light beam from radiation source (2) in object field (4) in object plane (5) guided without beam splitter, the object
It (12) is reflective, the final reflection mirror (38) in the illumination path before the object field (4) for the illumination light (3)
Comprising through-hole (40),
It is characterized in that it is designed so that at least one point for the object field (4), the light beam of the illumination light (3) is extremely
The incident direction (13) of energy weighting light and the normal (14) of the object plane (5) of the object field (4) make up less than 3 °
Angle.
2. illumination optics according to claim 1, it is characterised in that: the light beam of the illumination light (3) to the object
The maximum incident angle of field (4) is less than 10 °.
3. illumination optics according to claim 1, it is characterised in that: first of the illumination optics (7)
Reflecting mirror (9) is arranged so that the intermediate focus point (8) and described relative to the intermediate focus point (8) of the illumination light (3)
The optical path of the illumination light (3) between first reflecting mirror (9) of illumination optics (7) substantially with the object field
(4) optical path of the illumination light (3) in downstream is parallel.
4. illumination optics according to claim 1, it is characterised in that: first of the illumination optics (28)
Reflecting mirror (29) is arranged so that the intermediate focus point (8) and described relative to the intermediate focus point (8) of the illumination light (3)
The optical path of the illumination light (3) between first reflecting mirror (29) of illumination optics (28) and the object field (4)
The light beam guidance of the illumination light (3) in downstream is vertical.
5. illumination optics (28) according to claim 4, it is characterised in that: the intermediate focus point (8) and described
The light beam of part imaging beam and the imaging (3) between first reflecting mirror (29) of illumination optics (28)
Intersect.
6. illumination optics according to claim 1, it is characterised in that: the normal (14) of the object plane (5) and institute
The incident direction (13) for stating the energy weighting light of illumination light (3) is consistent.
7. lighting system includes:
Imaging optics (16 for Lithographic projection exposure；31；37), for passing through multiple reflecting mirrors (M1 to M6) guidance tool
There is the light beam of the imaging (3) of the wavelength less than 193nm, to carry out the reflective object in the object field (4) in object plane (5)
(12) to being imaged without beam splitter as the image field (17) in plane (18), wherein object field point has the chief ray angle less than 3 °
(α), and (at least one of M1 to M6) is designed near field reflections mirror to the reflecting mirror；
Illumination optics (7 according to claim 1 or 2；28).
8. lighting system according to claim 7, it is characterised in that: the illumination optics (7；28) coupled reflection
The illumination light (3) is coupled into the imaging optics (16 via through-hole (22) by mirror (11)；31；37) in reflecting mirror
One (M2).
9. lighting system according to claim 7, it is characterised in that: the illumination optics (7；28) coupled reflection
Mirror (38) includes the through-hole (40) that the imaging (3 ') passes through in the imaging optical path of the imaging optics.
10. lighting system according to claim 7, it is characterised in that: the free space inside the light beam of imaging (3)
(23) the arrangement illumination optics (7 in；28) coupled mirrors (11).
11. lighting system according to claim 7, it is characterised in that: coupled mirrors (11) have annular reflection surface
(39)。
12. projection exposure apparatus (1), includes:
According to lighting system described in one in claim 7 to 11；
For generating the light source (2) of the illumination and imaging (3).
13. the method for manufacturing structured component, the method comprise the steps of:
Reticle (12) and chip (19) are set；
By projection exposure apparatus according to claim 12 (1), by the arrangement projects on the reticle (12) to described
On the photosensitive layer of chip (19)；
Micro-structure or nanostructure are generated on the chip (19).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28606609P | 2009-12-14 | 2009-12-14 | |
| US61/286,066 | 2009-12-14 | ||
| CN201080063805.0A CN102754009B (en) | 2009-12-14 | 2010-12-03 | imaging optics |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080063805.0A Division CN102754009B (en) | 2009-12-14 | 2010-12-03 | imaging optics |
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| CN105511065A CN105511065A (en) | 2016-04-20 |
| CN105511065B true CN105511065B (en) | 2019-04-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610034283.0A Active CN105511065B (en) | 2009-12-14 | 2010-12-03 | Illumination optics, lighting system, projection exposure apparatus and assembly manufacture method |
| CN201080063805.0A Active CN102754009B (en) | 2009-12-14 | 2010-12-03 | imaging optics |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201080063805.0A Active CN102754009B (en) | 2009-12-14 | 2010-12-03 | imaging optics |
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| US (1) | US20120274917A1 (en) |
| EP (1) | EP2513697B1 (en) |
| JP (2) | JP5756121B2 (en) |
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| DE102010041623A1 (en) * | 2010-09-29 | 2012-03-29 | Carl Zeiss Smt Gmbh | mirror |
| KR102330570B1 (en) | 2012-02-06 | 2021-11-25 | 가부시키가이샤 니콘 | Reflective image-forming optical system, exposure apparatus, and device manufacturing method |
| DE102012209412A1 (en) * | 2012-06-04 | 2013-12-05 | Carl Zeiss Smt Gmbh | Optical method for measuring angular position of facet of facet mirror for extreme UV (EUV) lithography, involves detecting actual angular positions of facets in preset spectrum of angular positions with respect to reference axis |
| US9442387B2 (en) * | 2013-02-01 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet lithography process |
| DE102013223935A1 (en) * | 2013-11-22 | 2015-05-28 | Carl Zeiss Smt Gmbh | Illumination system for EUV exposure lithography |
| DE102014223811B4 (en) | 2014-11-21 | 2016-09-29 | Carl Zeiss Smt Gmbh | Imaging optics for EUV projection lithography, projection exposure apparatus and method for producing a structured component |
| US11099483B2 (en) | 2016-05-19 | 2021-08-24 | Nikon Corporation | Euv lithography system for dense line patterning |
| CN110753882B (en) * | 2017-04-19 | 2024-06-28 | 株式会社尼康 | Optical imaging, reflection system, exposure tool, apparatus, and device manufacturing method |
| TWI825014B (en) * | 2017-04-19 | 2023-12-11 | 日商尼康股份有限公司 | Optical objective for operation in euv spectral region |
| US11934105B2 (en) | 2017-04-19 | 2024-03-19 | Nikon Corporation | Optical objective for operation in EUV spectral region |
| CN110892328B (en) * | 2017-04-26 | 2022-04-29 | 株式会社尼康 | Reflection system, extreme ultraviolet exposure tool, lithography exposure tool, and optical system |
| US11054745B2 (en) | 2017-04-26 | 2021-07-06 | Nikon Corporation | Illumination system with flat 1D-patterned mask for use in EUV-exposure tool |
| US11300884B2 (en) | 2017-05-11 | 2022-04-12 | Nikon Corporation | Illumination system with curved 1d-patterned mask for use in EUV-exposure tool |
| CN109521652B (en) * | 2018-12-11 | 2020-04-10 | 中国科学院光电技术研究所 | Super-resolution photoetching device based on prismatic table light splitting |
| EP4152266A1 (en) * | 2021-09-16 | 2023-03-22 | Koninklijke Philips N.V. | Dark-field and phase-contrast tomography reconstruction algorithm |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2011073039A3 (en) | 2011-09-29 |
| EP2513697A2 (en) | 2012-10-24 |
| WO2011073039A2 (en) | 2011-06-23 |
| JP5756121B2 (en) | 2015-07-29 |
| JP2013513957A (en) | 2013-04-22 |
| JP6132319B2 (en) | 2017-05-24 |
| CN102754009A (en) | 2012-10-24 |
| EP2513697B1 (en) | 2019-08-07 |
| JP2015158694A (en) | 2015-09-03 |
| US20120274917A1 (en) | 2012-11-01 |
| CN102754009B (en) | 2016-02-17 |
| CN105511065A (en) | 2016-04-20 |
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