CN105502282A - Method for manufacturing MEMS humidity sensor - Google Patents
Method for manufacturing MEMS humidity sensor Download PDFInfo
- Publication number
- CN105502282A CN105502282A CN201510854729.XA CN201510854729A CN105502282A CN 105502282 A CN105502282 A CN 105502282A CN 201510854729 A CN201510854729 A CN 201510854729A CN 105502282 A CN105502282 A CN 105502282A
- Authority
- CN
- China
- Prior art keywords
- metal
- humidity sensor
- interdigital electrode
- layer
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 238000002360 preparation method Methods 0.000 claims abstract description 16
- 238000000059 patterning Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 25
- 239000000428 dust Substances 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000006263 metalation reaction Methods 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000012271 agricultural production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00103—Structures having a predefined profile, e.g. sloped or rounded grooves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
- G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention belongs to the technical field of the manufacturing process of semiconductor integrated circuits, and discloses a method for manufacturing an MEMS humidity sensor. The method comprises the following steps: at first, providing a substrate with an insulating layer, forming a metal connecting line in the insulating layer, and forming metal interdigital electrode layers, a metal bonding pad and a passivation layer on the upper surface of the insulating layer; then, patterning the passivation layer and the insulating layer, and exposing the metal connecting line and the upper surface of the metal bonding pad; and finally, forming humidity sensitive material layers between the metal interdigital electrode layers and on the upper surface of the passivation layer to prepare the MEMS humidity sensor. According to the method disclosed by the invention, in a preparation process of the humidity sensor, only two mask plates are needed to prepare the humidity sensor, compared with the existing manufacturing process of interdigital electrode humidity sensors, by adopting the method disclosed the invention, the manufacturing cost of the sensor does not need to be additionally added, the manufacturing process is simple, the production cost is reduced, and the preparation method is completely compatible with the traditional CMOS process.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing process technology field, relate to a kind of manufacture method of MEMS humidity sensor.
Background technology
Humidity, typically refers to the content of water vapor in air, and it is used for reflecting the dry wet degree of air.Mankind's daily life, industrial and agricultural production activity, and vegeto-animal existence and growth all have close relationship with the ambient humidity of surrounding.Moisture measurement needs to adopt humidity sensor, its be can there is the physical effect relevant with humidity or chemical reaction based on humidity functional material basis on manufacture, there is function humidity physical quantity being converted to electric signal.
Humidity sensor can be divided into telescopic, vaporation-type, dew point instrument, electronic type, electromagnetic type etc., wherein based on the investigation and application of electronic type according to the difference of its operation principle.What Recent study was more is capacitive based electronic type humidity sensor, this kind of humidity sensor main operational principle is: during the vapour molecule of wet sensitive dielectric material in adsorption and desorption air, its dielectric constant changes, thus cause device capacitance value to change, be converted into the signal of telecommunication relevant to humidity through treatment circuit and be read out.
Capacitance type humidity sensor mainly can be divided into vertical flat plate capacitor type and horizontal plate capacitor type structure.As its name suggests, vertical flat plate capacitor type refers to that the positive-negative electrode plate of humidity sensor is relative in vertical mode, electric pole plate has the electric pole plate of through hole or employing porous material, external environment needs to have an effect through electric pole plate and humidity-sensitive material, causes electric capacity to change; Horizontal plate electric capacity is also referred to as interdigital capacitor, and its positive-negative electrode plate is on same level direction, and humidity-sensitive material is filled between interdigital electrode, can directly contact with external environment.
Refer to Fig. 1 a-1e, Fig. 1 a-1e is the structural representation in prior art in interdigital capacitor type MEMS humidity sensor preparation process.As shown in Figure 1a, this interdigital capacitor type humidity sensor comprises metal contact wires 103 in substrate 101, insulating barrier 102, insulating barrier from bottom to top, formed and the interdigital electrode layer 104 of metal of insulating barrier upper surface, and the passivation layer 105 of covering metal interdigital electrode layer 104 and insulating barrier 102; As shown in Figure 1 b, adopt the first mask plate to etch passivation layer 105 and insulating barrier 102, and expose the upper surface of metal contact wires 103 and the upper surface of the interdigital electrode layer 104 of metal and side; As illustrated in figure 1 c, at the upper surface of the interdigital electrode layer 104 of metal and side deposit one deck for isolating the spacer medium layer 106 of steam; As shown in Figure 1 d, adopt the second mask plate to etch spacer medium layer 106, and expose the metal pad 107 for follow-up packaging and routing; As shown in fig. le, last deposit humidity-sensitive material layer 108, and adopt the 3rd mask plate to humidity-sensitive material layer 108 patterning, complete the preparation of humidity sensor.
In above-mentioned existing interdigital capacitor type MEMS humidity sensor preparation process, what complete humidity sensor at least needs three mask plates, and cause the complex manufacturing technology of existing humidity sensor, production cost is higher.Therefore, those skilled in the art need badly provides manufacture method that is a kind of and the MEMS humidity sensor of CMOS technology compatibility, simplification of flowsheet, reduces production cost.
Summary of the invention
For above problem, for overcoming the deficiencies in the prior art, the object of the present invention is to provide manufacture method that is a kind of and the MEMS humidity sensor of CMOS technology compatibility, simplification of flowsheet, reducing production cost.
In order to solve the problems of the technologies described above, the invention provides a kind of manufacture method of MEMS humidity sensor, comprising the following steps:
Step S01, the substrate that one has an insulating barrier is provided, in described insulating barrier, form metal contact wires, the upper surface of described insulating barrier forms the interdigital electrode layer of metal and metal pad, and the upper surface of the interdigital electrode layer of described metal and metal pad is coated with passivation layer;
Step S02, carries out patterning to described passivation layer and insulating barrier, and exposes the upper surface of described metal contact wires and metal pad, and the upper surface of the interdigital electrode layer of the coated described metal of described passivation layer and sidewall;
Step S03, between the interdigital electrode layer of described metal and passivation layer upper surface form humidity-sensitive material layer, complete the preparation of MEMS humidity sensor.
Preferably, in described step S01, the interdigital electrode layer of described metal comprises the positive electrode plate of the interdigital electrode layer of metal and the negative electrode plate of the interdigital electrode layer of metal, and the positive electrode plate of the interdigital electrode layer of described metal and the negative electrode plate of the interdigital electrode layer of metal are arranged in the same level on described insulating barrier interlacedly.
Preferably, in described step S02, photoetching and etching technics is adopted to carry out patterning to described passivation layer and insulating barrier, to expose the upper surface of described metal contact wires and metal pad.
Preferably, the thickness of the passivation layer that the sidewall of the interdigital electrode layer of described metal is coated is 200 dust ~ 1500 dusts.
Preferably, the thickness of the passivation layer that the upper surface of the interdigital electrode layer of described metal is coated is 200 dust ~ 10000 dusts.
Preferably, in step S03, described humidity-sensitive material layer is heat-treated described humidity-sensitive material layer after being formed.
Preferably, in step S03, chemical vapor deposition method or spin coating proceeding is adopted to form described humidity-sensitive material layer.
Preferably, the thickness of described humidity-sensitive material layer is 500nm ~ 10 μm.
Preferably, described humidity-sensitive material layer is organic polymer or porous media material.
Preferably, described humidity-sensitive material layer is polyimides.
The invention provides a kind of manufacture method of MEMS humidity sensor, two mask plates are only needed in the preparation process of humidity sensor, first mask plate is used for carrying out patterning to passivation layer and insulating barrier, second mask plate is used for carrying out patterning to humidity-sensitive material layer, the preparation of humidity sensor can be completed, compare existing interdigital electrode type humidity sensor manufacturing process, the present invention is without the need to additionally increasing sensor manufacturing cost, manufacturing process is simple, reduce production cost, and preparation method and traditional CMOS technology completely compatible.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 a-1e is the cross-sectional view of formation interdigital capacitor type humidity sensor of the prior art;
Fig. 2 is the schematic flow sheet of the manufacture method of the MEMS humidity sensor that the present invention proposes;
Fig. 3 a-3c is the cross-sectional view of the processing step of the MEMS humidity sensor that the present invention proposes.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.Those skilled in the art the content disclosed by this description can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by detailed description of the invention different in addition, and the every details in this description also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Above-mentioned and other technical characteristic and beneficial effect, by conjunction with the embodiments and the manufacture method of accompanying drawing to the MEMS humidity sensor that the present invention proposes be described in detail.Fig. 2 is the schematic flow sheet of the manufacture method of the MEMS humidity sensor that the present invention proposes; Fig. 3 a-3c is the cross-sectional view of the processing step of the MEMS humidity sensor that the present invention proposes.
Refer to Fig. 2, the invention provides a kind of manufacture method of MEMS humidity sensor, comprise the following steps:
Step S01, the substrate 201 that one has an insulating barrier 202 is provided, metal contact wires 203 is formed in insulating barrier 202, form at the upper surface of insulating barrier 202 the interdigital electrode layer 204 of metal and the metal pad 206 that are positioned at same level, the upper surface of the interdigital electrode layer 204 of metal and metal pad 206 is coated with passivation layer 205.
Concrete, refer to Fig. 3 a, the interdigital electrode layer of metal 204 comprises the positive electrode plate of the interdigital electrode layer of metal and the negative electrode plate of the interdigital electrode layer of metal, and the positive electrode plate of the interdigital electrode layer of metal and the negative electrode plate of the interdigital electrode layer of metal are arranged in the same level on insulating barrier 202 interlacedly.As an optional embodiment, the wafer substrate of one 8 inches can be adopted, and adopt known CMOS technology, silicon chip is formed conventional cmos device structure (figure slightly), after completing cmos circuit manufacture, continue on silicon chip, complete follow-up MEMS humidity sensor technique as a substrate-transfer to MEMS production line (manufactory), namely MEMS humidity sensor and cmos circuit adopt Single-Chip Integration, to improve chip overall performance, reduce costs.
Step S02, carries out patterning to passivation layer 205 and insulating barrier 202, and exposes the upper surface of metal contact wires 203 and metal pad 206, and the upper surface of passivation layer 205 clad metal interdigital electrode layer 204 and sidewall.
Concrete, refer to Fig. 3 b, utilize the first mask plate to adopt photoetching and etching technics to carry out patterning, to expose the upper surface of metal contact wires 203 and metal pad 206 to passivation layer 205 and insulating barrier 202.Wherein, the thickness of the passivation layer 205 that the sidewall of the interdigital electrode layer of metal 204 is coated is preferably 200 dust ~ 1500 dusts, and the thickness of the passivation layer 205 that its upper surface is coated is 200 dust ~ 10000 dusts.In the present embodiment, the thickness of the passivation layer 205 that the sidewall of the interdigital electrode layer of metal 204 is coated is 700 dusts, thickness 2000 dust of the passivation layer 205 that its upper surface is coated.
Step S03, between the interdigital electrode layer 204 of metal and passivation layer 205 upper surface form humidity-sensitive material layer 207, complete the preparation of MEMS humidity sensor.
Concrete, refer to Fig. 3 c, chemical vapor deposition method or spin coating proceeding is adopted to form humidity-sensitive material layer 207, the thickness of humidity-sensitive material layer 207 is 500nm ~ 10 μm, humidity-sensitive material layer 207 is organic polymer or porous media material, in the present embodiment, humidity-sensitive material layer 207 is the poly-polyimides that 1.5um is thick, preparation technology is first spin-on polyimide predecessor, and then utilize the second mask to pass through photoetching, develop graphical polyimides predecessor, to expose the upper surface of routing metal pad 206, and then form the thick Kapton of 1.5um through Overheating Treatment, form humidity-sensitive material layer 207, complete humidity sensor preparation.
In sum, the invention provides a kind of manufacture method of MEMS humidity sensor, two mask plates are only needed in the preparation process of humidity sensor, first mask plate is used for carrying out patterning to passivation layer and insulating barrier, second mask plate is used for carrying out patterning to humidity-sensitive material layer, the preparation of humidity sensor can be completed, compare existing interdigital electrode type humidity sensor manufacturing process, the present invention is without the need to additionally increasing sensor manufacturing cost, manufacturing process is simple, reduce production cost, and preparation method and traditional CMOS technology completely compatible.
Above-mentioned explanation illustrate and describes some preferred embodiments of the present invention, but as previously mentioned, be to be understood that the present invention is not limited to the form disclosed by this paper, should not regard the eliminating to other embodiments as, and can be used for other combinations various, amendment and environment, and can in invention contemplated scope described herein, changed by the technology of above-mentioned instruction or association area or knowledge.And the change that those skilled in the art carry out and change do not depart from the spirit and scope of the present invention, then all should in the protection domain of claims of the present invention.
Claims (10)
1. a manufacture method for MEMS humidity sensor, is characterized in that, comprises the following steps:
Step S01, the substrate that one has an insulating barrier is provided, in described insulating barrier, form metal contact wires, the upper surface of described insulating barrier forms the interdigital electrode layer of metal and metal pad, and the upper surface of the interdigital electrode layer of described metal and metal pad is coated with passivation layer;
Step S02, carries out patterning to described passivation layer and insulating barrier, and exposes the upper surface of described metal contact wires and metal pad, and the upper surface of the interdigital electrode layer of the coated described metal of described passivation layer and sidewall;
Step S03, between the interdigital electrode layer of described metal and passivation layer upper surface form humidity-sensitive material layer, complete the preparation of MEMS humidity sensor.
2. the manufacture method of MEMS humidity sensor according to claim 1, it is characterized in that, in described step S01, the interdigital electrode layer of described metal comprises the positive electrode plate of the interdigital electrode layer of metal and the negative electrode plate of the interdigital electrode layer of metal, and the positive electrode plate of the interdigital electrode layer of described metal and the negative electrode plate of the interdigital electrode layer of metal are arranged in the same level on described insulating barrier interlacedly.
3. the manufacture method of MEMS humidity sensor according to claim 1, it is characterized in that, in described step S02, photoetching and etching technics is adopted to carry out patterning to described passivation layer and insulating barrier, to expose the upper surface of described metal contact wires and metal pad.
4. the manufacture method of MEMS humidity sensor according to claim 3, is characterized in that, the thickness of the passivation layer that the sidewall of the interdigital electrode layer of described metal is coated is 200 dust ~ 1500 dusts.
5. the manufacture method of MEMS humidity sensor according to claim 3, is characterized in that, the thickness of the passivation layer that the upper surface of the interdigital electrode layer of described metal is coated is 200 dust ~ 10000 dusts.
6. the manufacture method of MEMS humidity sensor according to claim 1, is characterized in that, in step S03, described humidity-sensitive material layer is heat-treated described humidity-sensitive material layer after being formed.
7. the manufacture method of MEMS humidity sensor according to claim 1, is characterized in that, in step S03, adopts chemical vapor deposition method or spin coating proceeding to form described humidity-sensitive material layer.
8. the manufacture method of MEMS humidity sensor according to claim 7, is characterized in that, the thickness of described humidity-sensitive material layer is 500nm ~ 10 μm.
9. the manufacture method of MEMS humidity sensor according to claim 7, is characterized in that, described humidity-sensitive material layer is organic polymer or porous media material.
10. the manufacture method of MEMS humidity sensor according to claim 9, is characterized in that, described humidity-sensitive material layer is polyimides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510854729.XA CN105502282B (en) | 2015-11-30 | 2015-11-30 | A kind of manufacture method of MEMS humidity sensors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510854729.XA CN105502282B (en) | 2015-11-30 | 2015-11-30 | A kind of manufacture method of MEMS humidity sensors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105502282A true CN105502282A (en) | 2016-04-20 |
| CN105502282B CN105502282B (en) | 2017-05-31 |
Family
ID=55710669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510854729.XA Active CN105502282B (en) | 2015-11-30 | 2015-11-30 | A kind of manufacture method of MEMS humidity sensors |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105502282B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109283224A (en) * | 2018-11-16 | 2019-01-29 | 东南大学 | A kind of MEMS humidity sensor and its operating method |
| CN110108762A (en) * | 2019-04-08 | 2019-08-09 | 浙江省北大信息技术高等研究院 | A kind of humidity sensor and its manufacturing method |
| CN110118807A (en) * | 2019-04-08 | 2019-08-13 | 浙江省北大信息技术高等研究院 | A kind of MEMS humidity sensor and its manufacturing method |
| CN110873738A (en) * | 2018-09-04 | 2020-03-10 | 英飞凌科技股份有限公司 | Humidity Sensor |
| WO2021109999A1 (en) * | 2019-12-04 | 2021-06-10 | 杭州未名信科科技有限公司 | Humidity sensor and manufacturing method therefor |
| CN113176309A (en) * | 2021-05-17 | 2021-07-27 | 福建师范大学 | Humidity sensor manufactured by semiconductor packaging based on RDL (remote description language) process |
| CN113380549A (en) * | 2021-06-03 | 2021-09-10 | 宁波中车时代传感技术有限公司 | Humidity-sensitive capacitor, manufacturing method thereof and humidity measuring equipment |
| CN114152360A (en) * | 2021-10-27 | 2022-03-08 | 贵州航天智慧农业有限公司 | MEMS temperature, humidity and pressure three-in-one sensor chip and manufacturing process thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075816A (en) * | 1989-08-11 | 1991-12-24 | Vaisala Oy | Capacitive humidity sensor construction and method for manufacturing the sensor |
| CN1455251A (en) * | 2003-06-12 | 2003-11-12 | 东南大学 | Miniature Humidity Sensor |
| CN102209892A (en) * | 2008-09-10 | 2011-10-05 | 马来西亚微电子系统有限公司 | Improved capacitive sensor and method for making the same |
| CN102646644A (en) * | 2011-02-22 | 2012-08-22 | Nxp股份有限公司 | Integrated circuit with sensor and method of manufacturing such an integrated circuit |
| CN102692432A (en) * | 2012-05-29 | 2012-09-26 | 上海丽恒光微电子科技有限公司 | Integrated humidity sensor and manufacturing method |
| US20140291778A1 (en) * | 2013-03-28 | 2014-10-02 | Stmicroelectronics (Crolles 2) Sas | Integrated device of a capacitive type for detecting humidity, in particular manufactured using a cmos technology |
| CN104849325A (en) * | 2014-02-18 | 2015-08-19 | 无锡华润上华半导体有限公司 | MEMS humidity sensor compatible with CMOS process, and manufacturing method thereof |
-
2015
- 2015-11-30 CN CN201510854729.XA patent/CN105502282B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075816A (en) * | 1989-08-11 | 1991-12-24 | Vaisala Oy | Capacitive humidity sensor construction and method for manufacturing the sensor |
| CN1455251A (en) * | 2003-06-12 | 2003-11-12 | 东南大学 | Miniature Humidity Sensor |
| CN102209892A (en) * | 2008-09-10 | 2011-10-05 | 马来西亚微电子系统有限公司 | Improved capacitive sensor and method for making the same |
| CN102646644A (en) * | 2011-02-22 | 2012-08-22 | Nxp股份有限公司 | Integrated circuit with sensor and method of manufacturing such an integrated circuit |
| CN102692432A (en) * | 2012-05-29 | 2012-09-26 | 上海丽恒光微电子科技有限公司 | Integrated humidity sensor and manufacturing method |
| US20140291778A1 (en) * | 2013-03-28 | 2014-10-02 | Stmicroelectronics (Crolles 2) Sas | Integrated device of a capacitive type for detecting humidity, in particular manufactured using a cmos technology |
| CN104849325A (en) * | 2014-02-18 | 2015-08-19 | 无锡华润上华半导体有限公司 | MEMS humidity sensor compatible with CMOS process, and manufacturing method thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110873738A (en) * | 2018-09-04 | 2020-03-10 | 英飞凌科技股份有限公司 | Humidity Sensor |
| US11754522B2 (en) | 2018-09-04 | 2023-09-12 | Infineon Technologies Ag | Moisture sensor |
| CN109283224A (en) * | 2018-11-16 | 2019-01-29 | 东南大学 | A kind of MEMS humidity sensor and its operating method |
| CN110108762A (en) * | 2019-04-08 | 2019-08-09 | 浙江省北大信息技术高等研究院 | A kind of humidity sensor and its manufacturing method |
| CN110118807A (en) * | 2019-04-08 | 2019-08-13 | 浙江省北大信息技术高等研究院 | A kind of MEMS humidity sensor and its manufacturing method |
| WO2021109999A1 (en) * | 2019-12-04 | 2021-06-10 | 杭州未名信科科技有限公司 | Humidity sensor and manufacturing method therefor |
| CN113176309A (en) * | 2021-05-17 | 2021-07-27 | 福建师范大学 | Humidity sensor manufactured by semiconductor packaging based on RDL (remote description language) process |
| CN113380549A (en) * | 2021-06-03 | 2021-09-10 | 宁波中车时代传感技术有限公司 | Humidity-sensitive capacitor, manufacturing method thereof and humidity measuring equipment |
| CN114152360A (en) * | 2021-10-27 | 2022-03-08 | 贵州航天智慧农业有限公司 | MEMS temperature, humidity and pressure three-in-one sensor chip and manufacturing process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105502282B (en) | 2017-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105502282A (en) | Method for manufacturing MEMS humidity sensor | |
| CN105510404A (en) | Rapidly-responsive humidity sensor and manufacturing method thereof | |
| KR101093612B1 (en) | Capacitive humidity sensor and its manufacturing method | |
| CN104458835B (en) | A kind of humidity sensor and preparation method thereof | |
| CN103438936B (en) | Based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method | |
| KR101367887B1 (en) | Capacitance Type Humidity Sensor | |
| CN103434999B (en) | The integrated manufacturing method of a kind of temperature, humidity, air pressure and acceleration transducer | |
| CN104634832B (en) | CMOS MEMS capacitive humidity sensors and preparation method thereof | |
| CN110108762A (en) | A kind of humidity sensor and its manufacturing method | |
| CN105116019A (en) | Inductance type MEMS humidity sensor and preparation method thereof | |
| CN105181764B (en) | A kind of humidity sensor and manufacture method | |
| CN109060229B (en) | Capacitive pressure sensor and manufacturing method thereof | |
| CN1327215C (en) | Relative humidity sensor compatible of CMOS process | |
| CN103236429B (en) | With the Miniature carbon nano pipe humidity sensor chip of heating unit | |
| CN207798140U (en) | A kind of integrating device of chip | |
| CN109904243A (en) | Paper-like flexible UV light detector based on interface optimization and preparation method thereof | |
| KR100676088B1 (en) | Capacitive humidity sensor and its manufacturing method | |
| CN105241927B (en) | A kind of humidity sensor and preparation method | |
| CN112730537B (en) | Capacitive hydrogen sensor and preparation method thereof | |
| CN103308569B (en) | Singlechip integrated type carbon nano tube humidity sensor based on sine wave stimulation | |
| CN103076372A (en) | Capacitive-type humidity sensor | |
| CN209689645U (en) | A kind of tandem flexible sensor based on resonator and nanofiber | |
| CN113340950A (en) | Capacitive humidity sensor and manufacturing method thereof | |
| CN112710706A (en) | Humidity sensor | |
| CN207066640U (en) | A kind of MEMS pressure sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |