CN105489519B - In-situ temperature detection device, chip and the abatement detecting method of high resistance structure - Google Patents
In-situ temperature detection device, chip and the abatement detecting method of high resistance structure Download PDFInfo
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Abstract
This application provides in-situ temperature detection device, chip and the abatement detecting methods of a kind of high resistance structure.The in-situ temperature detection device of the high resistance structure includes: diode, has positive terminal and negative terminal；Plain conductor is connected with the negative terminal of diode.The trend of diode control electric current, plain conductor is used to incude the heat that high resistance structure gives off, utilize the particular kind of relationship between the temperature and resistance of plain conductor, i.e. the resistance value of plain conductor and the product of temperature-coefficient of electrical resistance are constant, the temperature value of high resistance structure generated after Joule heat can be detected by the in-situ temperature detection device of the application, and then obtains accurate failure detection result.
Description
Technical field
This application involves semiconductor fields, in particular to a kind of in-situ temperature detection device of high resistance structure, core
Piece and abatement detecting method.
Background technique
With the continuous development of sub-micro CMOS technology technology, various failure mechanisms start to display, hot current-carrying
Sub- injection effect (HCI, Hot Carrier Injection), gate dielectric breakdown (TDDB, Time related to time
Dependent Dielectric Breakdown) effect, metallization electromigration (EM, Electro migration) effect, Europe
Nurse contacts pore chain and degenerates and PMOSFET negative bias thermal instability (NBTI, Negative Bias Temperature
It Instability) is the main failure mechanism occurred in super large-scale integration, these failure mechanisms are related with temperature,
Especially electromigration effect.Therefore it in electromigration reliability measurement, needs accurately to know the actual temperature of measurement device, makes
Reliable life is accurately calculated.
It is all to be measured using measurement structure as shown in Figure 1 to the electromigration reliability of IC device at present, the measurement
Structure is typical four-end method (kelvin) measurement structure, and wherein first node F1 is the first current terminal (galvanization), the second section
Point F2 is the second current terminal (galvanization)；Third node S1 is the first measurement end (voltage measurement), and fourth node S2 is the second survey
It measures end (voltage measurement).In measurement, IC device 100 ' to be measured is heated using heating device, when being heated to predetermined temperature
When, make electric current by the first current terminal, the circuit of IC device 100 ' and the second current terminal, while measuring the first measurement end and second
Voltage drop between measurement end, so that the resistance of the IC device 100 ' under a certain environment temperature, root be calculated using voltammetry
Detect whether device makes resistance become larger and fail because of electromigration effect according to the resistance of measurement.When calculating averagely failure
Between in, the temperature of device under test be all directly with environment temperature (i.e. the temperature of heating device) substitute.
But high resistance structure (High resistance device, High-R) is in IC device in the prior art
Using more and more extensive, therefore the reliability of high resistance structure has increasing need for paying attention to, especially the reliability of electromigration effect
Problem.The electro-migration testing of high resistance structure still uses four-end method as shown in Figure 1 (kelvin) at present, and the service life is straight when calculating
It connects with environment temperature (i.e. the temperature of heating device) and replaces the temperature of tested high resistance structure.But due to high resistance structure
Joule heat effect to be far longer than traditional metal device, therefore the heating effect of high resistance structure itself cannot in testing
Simply ignore again, according to Black electromigration equation:
t50For mean time to failure, MTTF, A is constant, and j is current density, and n is the Activation Energy, and Ea is atomic migration activation
Can, k is Boltzmann constant, and T is the temperature of high resistance structure, and wherein T is the key factor for influencing mean time to failure, MTTF.In benefit
When with above-mentioned Black electromigration equation calculation mean time to failure, MTTF, if directly using environment temperature (i.e. the temperature of heating device)
It calculates, the actual temperature due to the temperature well below high resistance structure in testing, this will lead to the longevity of Calculation of Reliability
Life is significantly larger than actual life.Therefore a kind of installation method is needed, it is reliable in electromigration can accurately measures high resistance structure
Property test in actual temperature.
Summary of the invention
The application is intended to provide in-situ temperature detection device, chip and the abatement detecting method of a kind of high resistance structure, with
It solves the problems, such as accurately measure high resistance structure temperature in the prior art.
To achieve the goals above, according to the one aspect of the application, a kind of in-situ temperature of high resistance structure is provided
Detection device, the device include: diode, have positive terminal and negative terminal；Plain conductor, the negative terminal with diode
It is connected.
Further, above-mentioned plain conductor includes: the first plain conductor, is connected with above-mentioned negative terminal；A plurality of parallel connection
The second plain conductor, one end of each above-mentioned second plain conductor is connected with above-mentioned first plain conductor；Third plain conductor,
The other end of each above-mentioned second plain conductor is connected with above-mentioned third plain conductor.
Further, the spacing of adjacent above-mentioned second plain conductor is 0.05~0.5 μm.
Further, above-mentioned plain conductor is the plain conductor of a bending.
Further, do not intersect between plain conductor each section of an above-mentioned bending.
Further, above-mentioned plain conductor is copper conductor or aluminum conductor.
According to another aspect of the present invention, a kind of chip is provided, which includes: high resistance structure；And it is above-mentioned
In-situ temperature detection device, which is disposed adjacent with high resistance structure, for detecting high resistance structure
Operating temperature.
Further, the positive terminal of the diode of above-mentioned in-situ temperature detection device and the first of the high resistance structure
End is electrically connected；The second end of one end and the high resistance structure far from the diode of the plain conductor electrically connects
It connects.
According to another aspect of the present invention, a kind of abatement detecting method of high resistance structure is provided, the method is by upper
The in-situ temperature detection device stated is implemented, and includes: step S1, obtains the plain conductor of above-mentioned in situ detection device in predetermined temperature
Spend T0With the resistance value R of plain conductor when predetermined voltageT0With temperature-coefficient of electrical resistance TCRT0；Step S2, by above-mentioned plain conductor
The top of above-mentioned high resistance structure is set, incudes the heat that above-mentioned high resistance structure is radiated using above-mentioned plain conductor；Step
Rapid S3 applies voltage at the both ends of above-mentioned high resistance structure, and the high resistant electric current of above-mentioned high resistance structure is flowed through in detection；Step S4,
Apply predetermined voltage identical with step S1, utilizes resistance value RT0And TCRT0Obtain the temperature value T of above-mentioned plain conductor2；S5, benefit
With above-mentioned high resistant electric current, above-mentioned temperature value T2With the mean time to failure, MTTF of the above-mentioned high resistance structure of Black electromigration equation calculation.
Further, in above-mentioned steps S2, above-mentioned plain conductor is suspended in the top of above-mentioned high resistance structure, or upper
It states and insulating layer is set on the surface of high resistance structure, above-mentioned plain conductor is arranged on above-mentioned insulating layer.
Further, the positive terminal of the diode of above-mentioned in-situ temperature detection device and the first of above-mentioned high resistance structure
End is electrically connected；The second end of one end and above-mentioned high resistance structure far from above-mentioned diode of above-mentioned plain conductor electrically connects
It connects.
Further, above-mentioned steps S1 includes: step S11, and above-mentioned high resistance structure is heated to above-mentioned predetermined temperature T0；
Step S12, in above-mentioned predetermined temperature T0Under, in the positive terminal and above-mentioned plain conductor of the diode of above-mentioned in situ detection device
Second end between apply above-mentioned predetermined voltage, the electric current of above-mentioned plain conductor is flowed through in detection, is calculated according to voltammetry
State the resistance value R of plain conductorT0；Step S13, repeat the above steps S11 and above-mentioned steps S12, and obtaining predetermined temperature is T1Under
Resistance value RT1, by above-mentioned T0、T1、RT0And RT1It substitutes into above-mentionedIn, wherein △ R=RT1-RT0, △
T=T1-T0, R (T)=RT0, it is T that above-mentioned predetermined temperature, which is calculated,0When above-mentioned plain conductor temperature-coefficient of electrical resistance TCRT0。
Further, above-mentioned steps S4 includes: step S41, in the positive terminal of the diode of above-mentioned in situ detection device
Apply above-mentioned predetermined voltage identical with step S1 between the second end of above-mentioned plain conductor, above-mentioned plain conductor is flowed through in detection
Electric current, the resistance R of above-mentioned plain conductor is obtained according to voltammetryT2；Step S42, by RT0、TCRT0And RT2Substitute into RT2*TCRT2
=RT0*TCRT0In, T is calculated2At a temperature of TCRT2；Step S43, by RT2、R0、T0And TCRT2Substitute into formulaWherein, △ R=RT2-R0, △ T=T2-T0, R (T)=RT2, temperature value T is calculated2。
Using the technical solution of the application, diode controls the trend of electric current, and plain conductor is used to incude high resistance structure
The heat given off utilizes the particular kind of relationship between the temperature and resistance of plain conductor, the i.e. resistance value and resistance of plain conductor
The product of temperature coefficient is constant, and the generation that high resistance structure can be detected by the in-situ temperature detection device of the application is burnt
Temperature value after having burning ears, and then obtain accurate failure detection result.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 shows the structural schematic diagram of four-wire method measurement structure in the prior art；
Fig. 2 shows the in-situ temperature detection devices of high resistance structure provided by a kind of preferred embodiment of the application
Structural schematic diagram；
Fig. 3 shows the in-situ temperature detection device of high resistance structure provided by another preferred embodiment of the application
Structural schematic diagram；
Fig. 4 shows a kind of calibrating using in-situ temperature detection device shown in Fig. 2 for preferred embodiment of the application
The current flow diagram of journey and detection process；And
Fig. 5 shows a kind of the heated using in-situ temperature detection device shown in Fig. 2 of preferred embodiment of the application
The current flow diagram of journey.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also be intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
It should be noted that the description and claims of this application and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so that presently filed embodiment described herein for example can be in addition to herein
Sequence other than those of diagram or description is implemented.In addition, term " includes " and " having " and their any deformation, it is intended that
Be to cover it is non-exclusive include, for example, containing the process, method, system, product or equipment of a series of steps or units not
Those of be necessarily limited to be clearly listed step or unit, but may include be not clearly listed or for these processes, side
The intrinsic other step or units of method, product or equipment.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, being described as if the device in attached drawing is squeezed " in other devices
It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " may include " ... top " and
" in ... lower section " two kinds of orientation.The device can also be positioned with other different modes and (is rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
As background technique is introduced, the prior art carries out failure analysis in detection IC device and its high resistance structure
When, generally using the environment temperature locating for it as the foundation of its failure judgement, but high resistance structure generates in the detection process
A large amount of Joule heat, so that therefore the temperature of high resistance structure is made with environment temperature to high resistance knot much higher than environment temperature
The error of the failure judgement of structure is larger, and as above in order to solve the problems, such as, present applicant proposes a kind of in-situ temperatures of high resistance structure
Detection device.
Now, the illustrative embodiments according to the application are more fully described with reference to the accompanying drawings.However, these are exemplary
Embodiment can be implemented by many different forms, and should not be construed to be limited solely to embodiment party set forth herein
Formula.It should be understood that it is thoroughly and complete to these embodiments are provided so that disclosure herein, and these are shown
The design of example property embodiment is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expands layer
With the thickness in region, and make that identical device is presented with like reference characters, thus description of them will be omitted.
In a kind of preferred embodiment of the application, a kind of in-situ temperature detection device of high resistance structure is provided,
As shown in Figure 2 or Figure 3, which includes diode 1 and plain conductor 2, and diode 1 has positive terminal 11
With negative terminal 12；Plain conductor 2 is connected with the negative terminal 12 of diode 1.
In-situ temperature detection device with above structure, diode 1 control the trend of electric current, and plain conductor 2 is used to feel
The heat for answering high resistance structure 100 to give off, using the particular kind of relationship between the temperature and resistance of plain conductor 2, i.e. metal is led
The resistance value of line 2 and the product of temperature-coefficient of electrical resistance are constant, can be detected by the in-situ temperature detection device of the application
The temperature value of high resistance structure generated after Joule heat, and then obtain accurate failure detection result.
The plain conductor 2 of the application is primarily to the Joule heat that induction high resistance structure 100 gives off, therefore its structure
It is not particularly limited, the application is in order to obtain better inductive effects, as shown in Fig. 2, it is preferred that above-mentioned plain conductor 2 includes
One the first plain conductor 21, multiple second plain conductors 22 and a third plain conductor 23, the first plain conductor 21 with it is negative
Extreme son 12 is connected；One end of each second plain conductor 22 is connected with the first plain conductor 21；Each second plain conductor 22
The other end be connected with third plain conductor 23.In the structure of above-mentioned plain conductor 2, multiple second plain conductors 22 are simultaneously
Connection, enables plain conductor 2 to sense lesser temperature change, therefore can be sensitiveer, the resistance accurately measured
Variation, and then the temperature of high resistance structure 100 can be measured more accurately.
In addition, as shown in figure 3, the plain conductor 2 of the application can also for bending plain conductor 2, be more advantageous in this way
The connection of 2 each section of plain conductor, the connection with diode 1, enable the in-situ temperature detection device of the application more convenient
Be measured.
In plain conductor of the plain conductor as the in-situ temperature detection device of the application for selecting bending, in order to avoid
The Joule heat that the plain conductor of bending is generated in galvanization itself influences detection effect too much, a preferably above-mentioned bending
Do not intersect between plain conductor each section.
The plain conductor 2 of the application can select this field conventional technique conducting wire, preferably copper conductor or aluminum conductor.
In another preferred embodiment of the application, a kind of chip is provided, which includes high resistance structure 100
With above-mentioned in-situ temperature detection device, which is arranged in the top of high resistance structure 100, for detecting height
The operating temperature of electric resistance structure 100.
Chip with above structure, including high resistance structure 100 and in-situ temperature detection device, can be to chip structure
In the temperature of high resistance structure 100 accurately detected, and then solve the high resistance structure for being difficult to detect in existing chip
The problem of 100 temperature, may further accurately calculate in electromigration effect according to the temperature of high resistance structure 100 and averagely fail
Time.
When by the setting of in-situ temperature detection device in the chips, in order to more easily carry out high resistance structure 100
Temperature detection, the first end of the positive terminal 11 of the diode 1 of above-mentioned in-situ temperature detection device and above-mentioned high resistance structure 100
It is electrically connected；The second end of one end and above-mentioned high resistance structure 100 far from above-mentioned diode 1 of above-mentioned plain conductor 2 is electrical
Connection.
In another preferred embodiment of the application, the abatement detecting method of high resistance structure, the method are provided
Implemented by above-mentioned in-situ temperature detection device, and include: step S1, the plain conductor 2 for obtaining above-mentioned in situ detection device exists
Predetermined temperature T0With the resistance value R of the plain conductor 2 when predetermined voltageT0With temperature-coefficient of electrical resistance TCRT0；Step S2, by above-mentioned gold
Belong to the top that above-mentioned high resistance structure 100 is arranged in conducting wire 2, incudes above-mentioned 100 institute of high resistance structure using above-mentioned plain conductor 2
The heat of radiation；Step S3 applies voltage at the both ends of above-mentioned high resistance structure 100, and above-mentioned high resistance structure 100 is flowed through in detection
High resistant electric current；Step S4 applies predetermined voltage identical with step S1, utilizes resistance value RT0And TCRT0Obtain above-mentioned metal
The temperature value T of conducting wire 22；S5 utilizes above-mentioned high resistant electric current, above-mentioned temperature value T2With the electricity of height described in Black electromigration equation calculation
Hinder the mean time to failure, MTTF of structure 100.
Above-mentioned abatement detecting method, diode 1 control the trend of electric current, utilize the in-situ temperature detection device of the application
Plain conductor 2 incudes the heat that high resistance structure 100 gives off, and utilizes the specific pass between the temperature and resistance of plain conductor 2
System, i.e. resistance value RT0With temperature-coefficient of electrical resistance TCRT0Product value be constant C, therefore, utilize the particular kind of relationship and the application
In-situ temperature detection device can be detected the temperature value T of high resistance structure generated after Joule heat2, and then moved using Black electricity
It moves equation and obtains accurate failure detection result.
In order to make those skilled in the art more fully understand above-mentioned abatement detecting method, below with reference to attached drawing to above-mentioned mistake
Effect detection method is illustrated.
Firstly, step S1 is executed, by taking structure as shown in Figure 2 as an example, as shown in figure 4, wherein arrow direction is electricity
Stream flow direction, obtains the plain conductor 2 of above-mentioned in situ detection device in predetermined temperature T0With the resistance value R under predetermined voltageT0And electricity
Hinder temperature coefficient TCRT0, so as to calculate resistance value RT0With temperature-coefficient of electrical resistance TCRT0Constant product value C.The application
In-situ temperature detection device can be connect with the high resistance structure 100 of the application setting and also be separately provided, be separately provided
When, it is the detection of leakage current, mutually unaffected to the induction of temperature and by the current detecting of high resistance structure 100, so that
Above-mentioned in-situ temperature detection device being capable of flexible Application；When the two connection, Fig. 4 can refer to, wherein the positive terminal of diode 1
11 are electrically connected with the first end of above-mentioned high resistance structure 100；Above-mentioned plain conductor 2 far from above-mentioned diode 1 one end with
The second end of above-mentioned high resistance structure 100 is electrically connected.It is possible thereby to which in-situ temperature detection device and high resistance structure 100 are total to
It is same to be produced in IC process devices.And since diode 1 has unilateral conduction, apply voltage in first node F1,
When second node F2 is grounded, electric current flows to second node F2 through plain conductor 2 along the first positive terminal 12, ensure that detected
Electric current be the electric current of plain conductor 2, and then ensure that the resistance value R that can finally obtain plain conductor 2T0, resistance temperature
Coefficient T CRT0。
It is T to accurately calculate predetermined temperature0When plain conductor 2 resistance and temperature-coefficient of electrical resistance, it is preferably above-mentioned
Step S1 includes: step S11, and high resistance structure 100 is heated to predetermined temperature T0；Step S12, in above-mentioned predetermined temperature T0Under,
Apply the predetermined voltage between the positive terminal 11 of the diode 1 of detection device and the second end of plain conductor 2 in situ, i.e.,
It is grounded second node F2 and applies the predetermined voltage in first node F1, can make electric current along the first positive terminal 12 through metal
Conducting wire 2 flows to second node F2, and then is able to detect to obtain the electric current for flowing through plain conductor 2, is calculated according to voltammetry
State the resistance value R of plain conductor 2T0；Step S13 repeats step S11 and above-mentioned steps S12, and obtaining predetermined temperature is T1Under electricity
Resistance value RT1, by T0、T1、RT0And RT1It substitutes into above-mentionedIn, wherein △ R=RT1-RT0, △ T=T1-T0,
R (T)=RT0, it is T that predetermined temperature, which is calculated,0When plain conductor 2 temperature-coefficient of electrical resistance TCRT0。
Then, step S2 is executed, above-mentioned plain conductor 2 is arranged in the top of above-mentioned high resistance structure 100, such as Fig. 2 institute
Show, incudes the heat that the high resistance structure 100 is radiated using above-mentioned plain conductor 2, plain conductor 2 is sensing high resistance
Temperature can change after the heat that structure 100 is radiated, and the temperature which can directly react high resistance structure 100 becomes
Change, that is, the temperature value of the plain conductor 2 measured is equal to the temperature value of high resistance structure 100.
The positional relationship of above-mentioned plain conductor 2 and high resistance structure 100 can use following set-up mode: metal is led
Line 2 is suspended in the top of high resistance structure 100, or insulating layer is arranged on the surface of high resistance structure 100, plain conductor 2
Setting is on the insulating layer.Above two set-up mode can be avoided plain conductor 2 to the electrical property of of high resistance structure 100 itself
The influence of energy.
Step S3 is executed, using structure shown in Fig. 5, is grounded in the first end of high resistance structure 100, second end applies electricity
Pressure applies forward voltage in second node F2, is grounded first node F1, detection passes through the electric current of high resistance structure 100.This
The diode 1 of application has unilateral conduction, therefore electric current can only be by high resistance structure 100, without flowing to plain conductor
2, and then be easier to detect the high resistant electric current by high resistance structure 100.
Step S4 is executed, also with structure shown in Fig. 4, applies predetermined voltage identical with step S1, i.e., second
Node F2 applies forward voltage, and first node F1 ground connection detects the electric current of plain conductor 2, according to the calculating of voltammetry, above-mentioned step
The resistance value R that rapid S1 is obtainedT0With temperature-coefficient of electrical resistance TCRT0Obtain the temperature value T of plain conductor 22。
In order to more accurately obtain the temperature T of plain conductor 22, preferably above-mentioned steps S4 includes: step S41, in above-mentioned original
It is identical pre- to apply step S1 between the positive terminal 11 of the diode 1 of level detecting apparatus and the second end of the plain conductor 2
Constant voltage applies forward voltage in second node F2, is grounded first node F1, the electricity of above-mentioned plain conductor 2 is flowed through in detection
Stream, the resistance R of above-mentioned plain conductor 2 is calculated according to voltammetryT2；Step S42, by RT2The R obtained with step S1T0、TCRT0
Substitute into formula RT2*TCRT2=C, wherein C=RT0*TCRT0, T is calculated2At a temperature of TCRT2；Step S43, by what is obtained
RT2、R0、T0And TCRT2Substitute into formulaIn, wherein △ R=RT2-R0, △ T=T2-T0, R (T)=
RT2, the temperature value T of above-mentioned plain conductor 2 is calculated2, and then obtain the temperature value of high resistance structure.
After the detection for completing above steps, above-mentioned high resistant electric current, temperature value T are utilized2With Black electromigration equation meter
Calculate the mean time to failure, MTTF of high resistance structure 100.Black electromigration equation therein is equation mentioned by background technique:
It is well known by those skilled in the art that the electric current by high resistance structure 100 that the application detects is divided by high electricity
The current density in above-mentioned equation can be obtained in the sectional area of resistance structure 100；After the material of high resistance structure 100 determines, electricity
Current density index and atomic migration activation energy are constant, and those skilled in the art are detected by conventionally known method,
This is repeated no more；Therefore, the electric current (or current density) that the application is detected, the Activation Energy, atomic migration activation energy,
The temperature of high resistance structure 100, which substitutes into above-mentioned equation, can be calculated mean time to failure, MTTF.
The diode 1 of in-situ temperature detection structure with above structure controls the trend of electric current, and plain conductor 2 is used to feel
The heat for answering high resistance structure 100 to give off；The electricity of the plain conductor 2 when due to having obtained any predetermined temperature in advance
Resistance value RT0, temperature-coefficient of electrical resistance TCRT0And thus obtain the resistance value R of above-mentioned plain conductor 2T0With temperature-coefficient of electrical resistance TCRT0
Constant product value C, therefore by detection under a certain voltage by the size of current of plain conductor 2, further according to voltammetry meter
Calculating obtains the resistance value R of plain conductor 2T2, the temperature-coefficient of electrical resistance of plain conductor 2 at this voltage can be calculated
TCRT2, and then the temperature value of plain conductor 2 at this voltage is obtained according to the temperature-coefficient of electrical resistance calculation formula of plain conductor 2
T2, it follows that temperature value of the high resistance structure 100 after galvanization, and then solve and be difficult to Accurate Determining height in the prior art
The problem of 100 temperature of electric resistance structure.By temperature that above-mentioned detection obtains, electric current substitutes into Black electromigration equation can obtain standard
True mean time to failure, MTTF.
It can be seen from the above description that the above-mentioned embodiment of the application realizes following technical effect:
1), the trend of the diode control electric current of the application in-situ temperature detection device, plain conductor are used to incude high electricity
The heat that structural radiation goes out is hindered, the particular kind of relationship between the temperature and resistance of plain conductor, the i.e. resistance value of plain conductor are utilized
Product with temperature-coefficient of electrical resistance is constant, can detect high resistance structure by the in-situ temperature detection device of the application
Temperature value after generating Joule heat, and then solve the problems, such as to be difficult to Accurate Determining high resistance structure temperature in the prior art.
2), the application in-situ temperature detection structure and abatement detecting method are all relatively simple, are conducive to promote and apply.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (13)
1. a kind of in-situ temperature detection device of high resistance structure characterized by comprising
Diode (1) has positive terminal (11) and negative terminal (12)；The diode (1) is used to control the trend of electric current；
Plain conductor (2) is connected with the negative terminal (12) of the diode (1)；The plain conductor (2) is for incuding height
The heat that electric resistance structure gives off.
2. in-situ temperature detection device according to claim 1, which is characterized in that the plain conductor (2) includes:
First plain conductor (21) is connected with the negative terminal (12)；
The second plain conductor (22) of a plurality of parallel connection, one end of each second plain conductor (22) and first plain conductor
(21) it is connected；
The other end of third plain conductor (23), each second plain conductor (22) is connected with the third plain conductor (23)
It connects.
3. in-situ temperature detection device according to claim 2, which is characterized in that adjacent second plain conductor (22)
Spacing be 0.05~0.5 μm.
4. in-situ temperature detection device according to claim 1, which is characterized in that the plain conductor (2) is one curved
The plain conductor of folding.
5. in-situ temperature detection device according to claim 4, which is characterized in that the plain conductor of a bending is each
Do not intersect between part.
6. in-situ temperature detection device according to any one of claim 1 to 5, which is characterized in that the plain conductor
It (2) is copper conductor or aluminum conductor.
7. a kind of chip characterized by comprising
High resistance structure (100)；And
In-situ temperature detection device described in any one of claims 1 to 6 is set above the high resistance structure (100)
It sets, for detecting the operating temperature of the high resistance structure (100).
8. chip according to claim 7, which is characterized in that the diode (1) of the in-situ temperature detection device is just
The first end of extreme son (11) and the high resistance structure (100) is electrically connected；Separate two pole of the plain conductor (2)
The second end of one end and the high resistance structure (100) for managing (1) is electrically connected.
9. a kind of abatement detecting method of high resistance structure, which is characterized in that the abatement detecting method using claim 1 to
In-situ temperature detection device described in any one of 6 is implemented, and includes:
Step S1, in predetermined temperature T0Under predetermined voltage, the plain conductor (2) of the in situ detection device is obtained described pre-
Determine temperature T0When resistance value RT0With temperature-coefficient of electrical resistance TCRT0；
The plain conductor (2) are arranged in the top of the high resistance structure (100), utilize the plain conductor by step S2
(2) incude the heat that the high resistance structure (100) is radiated；
Step S3 applies voltage at the both ends of the high resistance structure (100), and detection passes through the high resistance structure (100)
High resistant electric current；
Step S4 applies the predetermined voltage identical with step S1, utilizes resistance value RT0And TCRT0Obtain the plain conductor
(2) temperature value T2；
Step S5 utilizes the high resistant electric current, the temperature value T2With high resistance structure described in Black electromigration equation calculation
(100) mean time to failure, MTTF.
10. abatement detecting method according to claim 9, which is characterized in that in the step S2, the plain conductor
(2) it is suspended in the top of the high resistance structure (100), or insulation is set on the surface of the high resistance structure (100)
Layer, the plain conductor (2) are arranged on the insulating layer.
11. abatement detecting method according to claim 9, which is characterized in that two poles of the in-situ temperature detection device
The first end of the positive terminal (11) and the high resistance structure (100) of managing (1) is electrically connected；The plain conductor (2) it is remote
The second end of one end and the high resistance structure (100) from the diode (1) is electrically connected.
12. the abatement detecting method according to any one of claim 9 to 11, which is characterized in that the step S1 includes:
The high resistance structure (100) is heated to the predetermined temperature T by step S110；
Step S12, in the predetermined temperature T0Under, positive terminal (11) and institute in the diode (1) of the in situ detection device
It states and applies the predetermined voltage between the second end of plain conductor (2), the electric current of the plain conductor (2) is flowed through in detection, according to
The resistance value R of the plain conductor (2) is calculated in voltammetryT0；
Step S13, repeating said steps S11 and the step S12, obtaining predetermined temperature is T1Under resistance value RT1, will be described
T0、T1、RT0And RT1Described in substitutionIn, wherein △ R=RT1-RT0, △ T=T1-T0, R (T)=RT0,
It is T that the predetermined temperature, which is calculated,0When the plain conductor (2) temperature-coefficient of electrical resistance TCRT0。
13. the abatement detecting method according to any one of claim 9 to 11, which is characterized in that the step S4 includes:
Step S41, the diode (1) of the in situ detection device positive terminal (11) and the plain conductor (2) the
Apply the predetermined voltage identical with step S1 between two ends, the electric current of the plain conductor (2) is flowed through in detection, according to volt-ampere
Method obtains the resistance R of the plain conductor (2)T2；
Step S42, by RT0、TCRT0And RT2Substitute into RT2*TCRT2=RT0*TCRT0In, T is calculated2At a temperature of TCRT2；
Step S43, by RT2、R0、T0And TCRT2Substitute into formulaWherein, △ R=RT2-R0, △ T=
T2-T0, R (T)=RT2, temperature value T is calculated2。
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| CN1982906A (en) * | 2005-12-13 | 2007-06-20 | 上海华虹Nec电子有限公司 | Structure and method for testing metal interconnecting charge transfer |
| CN103808425A (en) * | 2012-11-08 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Method for measuring polycrystalline silicon temperature change |
| CN103824839A (en) * | 2012-11-16 | 2014-05-28 | 中芯国际集成电路制造(上海)有限公司 | Testing structure for reliability analysis in integrated circuit and testing method thereof |
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| US6603321B2 (en) * | 2001-10-26 | 2003-08-05 | International Business Machines Corporation | Method and apparatus for accelerated determination of electromigration characteristics of semiconductor wiring |
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| CN1982906A (en) * | 2005-12-13 | 2007-06-20 | 上海华虹Nec电子有限公司 | Structure and method for testing metal interconnecting charge transfer |
| CN103808425A (en) * | 2012-11-08 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Method for measuring polycrystalline silicon temperature change |
| CN103824839A (en) * | 2012-11-16 | 2014-05-28 | 中芯国际集成电路制造(上海)有限公司 | Testing structure for reliability analysis in integrated circuit and testing method thereof |
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