CN105489511B - Mark the preparation method and mold of diameter BGA package metal soldered ball - Google Patents
Mark the preparation method and mold of diameter BGA package metal soldered ball Download PDFInfo
- Publication number
- CN105489511B CN105489511B CN201510854262.9A CN201510854262A CN105489511B CN 105489511 B CN105489511 B CN 105489511B CN 201510854262 A CN201510854262 A CN 201510854262A CN 105489511 B CN105489511 B CN 105489511B
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- China
- Prior art keywords
- bga package
- template
- soldered ball
- ball
- package metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 61
- 239000002184 metal Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 239000002994 raw material Substances 0.000 claims abstract description 19
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 230000001681 protective effect Effects 0.000 claims abstract description 10
- 230000009471 action Effects 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000011236 particulate material Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000004809 Teflon Substances 0.000 claims description 4
- 229920006362 Teflon® Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 239000000498 cooling water Substances 0.000 claims description 3
- 238000005485 electric heating Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- VKDJIPBMRCGQMQ-UHFFFAOYSA-N argon krypton xenon Chemical compound [Ar].[Kr].[Xe] VKDJIPBMRCGQMQ-UHFFFAOYSA-N 0.000 description 1
- 238000009690 centrifugal atomisation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011378 shotcrete Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses a kind of preparation methods and mold for marking diameter BGA package metal soldered ball; by in the environment of protective gas is protected; molten metal raw material are scraped in the array through-hole of mold with scraper; the molten metal raw material in array through-hole are made to shrink balling-up under the action of surface tension by cooling again; and for the ease of balling-up and demoulding, high temperature resistant antistick layer is coated on the surface of mold.Mark diameter BGA package metal soldered ball is prepared by this method and mold, the mark diameter BGA package metal soldered ball out of roundness that high production efficiency, production cost are low, bulb diameter is controllable and obtained is high, sphere diameter uniformity is good, ball surface quality is good.It is widely applied and plants ball, the technical field of electronic encapsulation such as Flip Chip with BGA.
Description
Technical field
The present invention relates to a kind of preparation methods and mold for marking diameter BGA package metal soldered ball.
Background technique
In electronics industry, with the annual global increase year by year to electronic product demand, to mark diameter BGA (ball bar battle array
Column) demand of package metals soldered ball is also increasing year by year.Since the quality of soldered ball directly influences the package level and property of chip
Can, therefore produce mark diameter BGA (ball grid array) the package metals weldering that out of roundness is high, sphere diameter uniformity is good, ball surface quality is good
Ball becomes the research focus of each research institution.The method of conventionally manufactured BGA (ball grid array) package metals soldered ball mainly has gas
Atomization, centrifugal atomization, chopping remelting process, the symmetrical liquid drop method of forming, pulse small hole gunite etc..These existing technical sides
Method, production cost is higher, low efficiency, and the out of roundness of soldered ball, uniformity and surface quality are also not satisfactory.With BGA package skill
The development of art is eliminated at last based on the considerations of the factors tradition playing skill art such as production cost, efficiency, product quality, therefore
Application field receives certain limitation, is difficult to preferably develop in electronic technology encapsulation field.
Summary of the invention
To solve the above-mentioned problems, the purpose of the present invention is to provide a kind of preparation sides for marking diameter BGA package metal soldered ball
Method and mold, high production efficiency, production cost are low and bulb diameter is controllable, and mark diameter BGA package metal soldered ball obtained has proper circle
The advantages that degree is high, sphere diameter uniformity is good, ball surface quality is good.
In order to reach the goals above, the technical solution adopted by the present invention is that: it is a kind of mark diameter BGA package metal soldered ball preparation
Method, comprising the following steps:
A. several through-holes to form array, and the upper table for carrying ball plate with one in the upper surface of the template are opened up in a template
Face is respectively adopted fluorine-containing silicate particulate material and coats to form antistick layer, and template is separatably superimposed on and carries above ball plate and makes
The two fits;
B. the raw material of preparation mark diameter BGA package metal soldered ball are placed in template, under the protection of protective gas, are passed through
Heating makes raw material become molten condition;
C. the raw material of the molten condition in template are scraped in through-hole with scraper;
D. it is shunk on carrying ball plate under the action of surface tension by the cooling raw material for making the molten condition in through-hole
Balling-up, and harden and to form mark diameter BGA package metal soldered ball.
Further, in step a, quantity and position several arcs corresponding with the through-hole in template are opened up on carrying ball plate
Shape pit, then antistick layer is coated in the upper surface for carrying ball plate.
Further, fluorine-containing silicate particulate material is Teflon.
Further, the radius for marking diameter BGA package metal soldered ball is 0.1~1mm.
Further, the cross-sectional shape of through-hole is circle, triangle, rectangular or polygon.
Further, template and load ball plate use stainless steel plate or ceramic wafer.
Further, protective gas is the combination of one or more of nitrogen and inert gas.
Further, the heating means in step b are electric heating, radio frequency heating or infrared heating.
Further, the cooling means in step d is by cryogenic box cooling or by cooling water cooling.
The present invention also provides another technical solutions: a kind of preparation side for above-mentioned mark diameter BGA package metal soldered ball
The mold of method, it includes the template from top to bottom set gradually and carries ball plate, offers several through-holes to form array in template,
And the upper surface of template and the upper surface of load ball plate are respectively adopted fluorine-containing silicate particulate material and coat the antistick layer to be formed, template
It separatably fits with ball plate is carried.
By adopting the above-described technical solution, the preparation method and mold of mark diameter BGA package metal soldered ball of the present invention, pass through
In the environment of protective gas protection, molten metal raw material are scraped in the array through-hole of mold with scraper, then by cold
But so that the molten metal raw material in array through-hole is shunk balling-up under the action of surface tension, and for the ease of balling-up and take off
Mould is coated with high temperature resistant antistick layer on the surface of mold.Mark diameter BGA package metal soldered ball is prepared by this method and mold, it is raw
It is equal to produce high-efficient, production cost is low, bulb diameter is controllable and obtained mark diameter BGA package metal soldered ball out of roundness height, sphere diameter
Even property is good, ball surface quality is good.It is widely applied and plants ball, the technical field of electronic encapsulation such as Flip Chip with BGA.
Detailed description of the invention
Attached drawing 1 is the preparation method of present invention mark diameter BGA package metal soldered ball and the structural schematic diagram of the template in mold;
Attached drawing 2 is the structural representation of the preparation method of present invention mark diameter BGA package metal soldered ball and the load ball plate in mold
Figure;
Structural schematic diagram when attached drawing 3 is heating in the preparation method and mold of present invention mark diameter BGA package metal soldered ball;
Structure when attached drawing 4 is soldered ball molding in the preparation method and mold of present invention mark diameter BGA package metal soldered ball is shown
It is intended to.
Figure label are as follows:
1, template;2, through-hole;3, ball plate is carried;4, antistick layer;5, protective gas delivery pipe;6, scraper;7, arc pit;8,
Heating device;9, diameter BGA package metal soldered ball is marked;10, cooling device.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art.
Structural schematic diagram from attached drawing 1 to attached drawing 4, which can be seen that, present embodiments provides a kind of mark diameter BGA package metal
The preparation method of soldered ball, comprising the following steps:
A. several through-holes 2 to form array are opened up in a template 1, and carry ball plate 3 with one in the upper surface of the template 1
Upper surface is respectively adopted fluorine-containing silicate particulate material and coats to form antistick layer 4 resistant to high temperature, and template 1 is separatably superimposed on
It carries 3 top of ball plate and the two is made to fit.Preferably, template 1 is identical as the size and shape of ball plate 3 are carried, and material uses resistance to height
The indeformable stainless steel plate of temperature or ceramic wafer.Fluorine-containing silicate particulate material used in the present embodiment is Teflon resistant to high temperature
Imperial material.
B. the raw material (being not drawn into attached drawing) of preparation mark diameter BGA package metal soldered ball are placed in template 1, in protection gas
Under the protection of body, raw material are made to become molten condition by heating, as shown in Fig. 3, protective gas is conveyed by protective gas
Pipe 5 conveys, and wherein the arrow in attached drawing 3 indicates gas outflow direction.Protective gas is nitrogen and inert gas (including He-Ne
Argon krypton xenon, preferably helium) one or more of combination.The raw material of preparation mark diameter BGA package metal soldered ball can be
The low melting point metal material of the single material such as In, Sn, is also possible to the low of the multiple materials such as Sn-Pb, Sn-Cu, Sn-Ag, Bi-Sb
Fusing point synthesizes metal material.
C. the raw material of the molten condition in template 1 are scraped in through-hole 2 with scraper 6.
D. it is received on carrying ball plate 3 under the action of surface tension by the cooling raw material for making the molten condition in through-hole 2
It shortens ball into, and hardens and to form mark diameter BGA package metal soldered ball 9.
In a kind of highly preferred embodiment, in step a, quantity and position and mould are first opened up on carrying ball plate 3
The corresponding several arc pits 7 of through-hole 2 on plate 1, then antistick layer 4 is coated in the upper surface for carrying ball plate 3.The arc pit 7
The out of roundness for helping to improve mark diameter BGA package metal soldered ball prevents mark diameter BGA package metal soldered ball 9 and carries 3 contact position of ball plate
Form plane.
More preferably, it is provided with positioning device between template 1 and load ball plate 3, template 1 and load ball plate 3 can either be made superimposed
When fitting, through-hole 2 accurately can be corresponded mutually with arc pit 7, additionally it is possible to be made template 1 and be carried ball plate 2 in superposition fitting
When relative position fix, will not be disengaged because of the collision of external force.Positioning device can be the cooperation knot of positioning pin and location hole
Structure, or the fit structure or other suitable structures in the prior art of fixture block and card slot.
The radius for marking diameter BGA package metal soldered ball 9 is 0.1~1mm, the depth of the cross sectional dimensions of above-mentioned through-hole 2, through-hole 2
The size and depth of (i.e. the thickness of template 1) and above-mentioned arc pit 7 are spent, all according to practical mark diameter BGA package to be prepared
The sphere diameter of metal soldered ball determines.The number of through-hole 2 is not reference with number in attached drawing, is arranged according to the actual situation.
Since mark diameter BGA package metal soldered ball 9 shrinks balling-up under the action of surface tension, so the shape of through-hole 2
It will not influence the out of roundness of mark diameter BGA package metal soldered ball 9, the cross-sectional shape of through-hole 2 can be circle, triangle, rectangular
Or polygon.
In a kind of highly preferred embodiment, the heating means in step b can be electric heating, radio frequency heating or red
External heat.As shown in Fig. 3, heating device 8 can also carry ball plate 3 using the electric heater for carrying 3 lower section of ball plate is set to
Inside setting heater strip.
In a kind of highly preferred embodiment, the cooling means in step d is cooling by cryogenic box or passes through cold
But water is cooling, cooling by other high-efficiency coolants, such as freon.As shown in Fig. 4, cooling device 10 is to be set to carry ball plate
The cooling water system of 3 lower sections.
The present embodiment also provides a kind of mold of preparation method for above-mentioned mark diameter BGA package metal soldered ball, it includes
The template 1 that from top to bottom sets gradually and ball plate 3 is carried, offers several through-holes 2 to form array in template 1, and template 1 is upper
Surface and the upper surface for carrying ball plate 3 are respectively adopted fluorine-containing silicate particulate material and coat the antistick layer 4 to be formed, template 1 and load ball
Plate 3 separatably fits.
Preferably, template 1 is identical as the size and shape of ball plate 3 are carried, and material uses the indeformable stainless steel plate of high temperature resistant
Or ceramic wafer.Fluorine-containing silicate particulate material used in the present embodiment is Teflon material resistant to high temperature.
In a kind of highly preferred embodiment, the through-hole in quantity and position and template 1 is first opened up on carrying ball plate 3
2 corresponding several arc pits 7, then antistick layer 4 is coated in the upper surface for carrying ball plate 3.The arc pit 7 helps to improve mark
The out of roundness of diameter BGA package metal soldered ball prevents mark diameter BGA package metal soldered ball 9 and carries 3 contact position of ball plate to form plane.
More preferably, it is provided with positioning device (being not drawn into attached drawing) between template 1 and load ball plate 3,1 He of template can either be made
When carrying the 3 superimposed fitting of ball plate, through-hole 2 accurately can be corresponded mutually with arc pit 7, additionally it is possible to be made template 1 and be carried ball
Relative position of the plate 2 when being superimposed fitting is fixed, and will not be disengaged because of the collision of external force.Positioning device can be positioning pin and determine
The fit structure in position hole, or the fit structure or other suitable structures in the prior art of fixture block and card slot.
The radius for marking diameter BGA package metal soldered ball 9 is 0.1~1mm, the depth of the cross sectional dimensions of above-mentioned through-hole 2, through-hole 2
The size and depth of (i.e. the thickness of template 1) and above-mentioned arc pit 7 are spent, all according to practical mark diameter BGA package to be prepared
The sphere diameter of metal soldered ball determines.
Since mark diameter BGA package metal soldered ball 9 shrinks balling-up under the action of surface tension, so the shape of through-hole 2
It will not influence the out of roundness of mark diameter BGA package metal soldered ball 9, the cross-sectional shape of through-hole 2 can be circle, triangle, rectangular
Or polygon.
The preparation method and mold of mark diameter BGA package metal soldered ball of the present invention, by the environment of protective gas is protected,
Molten metal raw material are scraped in the array through-hole of mold with scraper, then pass through the cooling molten metal made in array through-hole
Raw material shrink balling-up under the action of surface tension, and for the ease of balling-up and demoulding, are coated with resistance to height on the surface of mold
Warm antistick layer.Mark diameter BGA package metal soldered ball is prepared by this method and mold, high production efficiency, production cost are low, ball is straight
Diameter is controllable, and obtained mark diameter BGA package metal soldered ball out of roundness is high, sphere diameter uniformity is good, ball surface quality is good.Extensively
Ball, the technical field of electronic encapsulation such as Flip Chip are planted using with BGA.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (8)
1. a kind of preparation method for marking diameter BGA package metal soldered ball, it is characterised in that: the following steps are included:
A opens up several through-holes (2) to form array on a template (1), the cross-sectional shape of the through-hole (2) be it is round or
Polygon, the polygon include triangle and rectangular, are opened up on quantity and position and the template (1) on carrying ball plate (3)
The corresponding several arc pits (7) of through-hole (2), and the upper surface of the template (1) and it is described carry ball plate (3) upper surface
Fluorine-containing silicate particulate material is respectively adopted to coat to form antistick layer (4), the template (1) is separatably superimposed on the load
Above ball plate (3) and the two is made to fit;
The raw material of preparation mark diameter BGA package metal soldered ball are placed on the template (1) by b, under the protection of protective gas,
The raw material are made to become molten condition by heating;
C is scraped the raw material of the molten condition on the template (1) into the through-hole (2) with scraper (6);
D makes the raw material of the molten condition in the through-hole (2) under the action of surface tension by cooling, in the load ball
Plate shrinks balling-up on (3), and hardens and to form mark diameter BGA package metal soldered ball (9).
2. the preparation method of mark diameter BGA package metal soldered ball according to claim 1, it is characterised in that: described is fluorine-containing
Silicate particles material is Teflon material.
3. the preparation method of mark diameter BGA package metal soldered ball according to claim 1, it is characterised in that: the mark diameter
The radius of BGA package metal soldered ball (9) is 0 .1~1mm.
4. the preparation method of mark diameter BGA package metal soldered ball according to claim 1, it is characterised in that: the template
(1) and ball plate (3) are carried using stainless steel plate or ceramic wafer.
5. the preparation method of mark diameter BGA package metal soldered ball according to claim 1, it is characterised in that: the protection
Gas is the combination of one or more of nitrogen and inert gas.
6. the preparation method of mark diameter BGA package metal soldered ball according to claim 1, it is characterised in that: the step b
In heating means be electric heating, radio frequency heating or infrared heating.
7. the preparation method of mark diameter BGA package metal soldered ball according to claim 1, it is characterised in that: the step d
In cooling means be cooling by cryogenic box or cooled down by cooling water.
8. a kind of mold of the preparation method for mark diameter BGA package metal soldered ball described in claim 1, it is characterised in that:
It include the template (1) from top to bottom set gradually and carry ball plate (3), the template (1) if on offer to form array
Dry through-hole (2), and fluorine-containing silicate particles are respectively adopted in the upper surface of the template (1) and the upper surface for carrying ball plate (3)
Material coats the antistick layer to be formed (4), and the template (1) separatably fits with ball plate (3) are carried.
Priority Applications (1)
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CN201510854262.9A CN105489511B (en) | 2015-11-30 | 2015-11-30 | Mark the preparation method and mold of diameter BGA package metal soldered ball |
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CN201510854262.9A CN105489511B (en) | 2015-11-30 | 2015-11-30 | Mark the preparation method and mold of diameter BGA package metal soldered ball |
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CN105489511B true CN105489511B (en) | 2019-01-25 |
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CN105750764B (en) * | 2016-05-13 | 2018-02-02 | 北京工业大学 | A kind of BGA reinforced by nanoparticles solder ball preparation methods |
CN106181130B (en) * | 2016-07-08 | 2018-06-29 | 北京工业大学 | Laboratory BGA nano reinforcement solder balls and the preparation method of thermal fatigue resistance bga device |
CN111001961A (en) * | 2019-12-23 | 2020-04-14 | 北京工业大学 | Method for preparing micro solder balls for electronic packaging in batch based on ball forming paste printing technology and automatic device |
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TW273638B (en) * | 1994-01-20 | 1996-04-01 | Fujitsu Ltd | |
CN1132570A (en) * | 1993-09-30 | 1996-10-02 | 美国3M公司 | Patterned array of uniform metal microbeads |
CN1257607A (en) * | 1997-05-23 | 2000-06-21 | 美国3M公司 | Method for making a patterned array of solder bumps |
TWI239799B (en) * | 1999-09-06 | 2005-09-11 | Micro Tec Co Ltd | A method for forming a solder ball |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8277922B2 (en) * | 1998-10-05 | 2012-10-02 | 3M Innovative Properties Company | Stem web |
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2015
- 2015-11-30 CN CN201510854262.9A patent/CN105489511B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1132570A (en) * | 1993-09-30 | 1996-10-02 | 美国3M公司 | Patterned array of uniform metal microbeads |
TW273638B (en) * | 1994-01-20 | 1996-04-01 | Fujitsu Ltd | |
CN1257607A (en) * | 1997-05-23 | 2000-06-21 | 美国3M公司 | Method for making a patterned array of solder bumps |
TWI239799B (en) * | 1999-09-06 | 2005-09-11 | Micro Tec Co Ltd | A method for forming a solder ball |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: LA25, Room 801, 8th Floor, Building 6, No. 27, Zigang Road, Science and Education New City, Taicang City, Suzhou City, Jiangsu Province 215400 Patentee after: SUZHOU RUIERMEI PHOTOELECTRIC TECHNOLOGY CO.,LTD. Address before: Room 101-1, Building 6, Huangyangdun, Xitang Street, Pingwang Town, Wujiang District, Suzhou City, Jiangsu Province, 215221 Patentee before: SUZHOU RUIERMEI PHOTOELECTRIC TECHNOLOGY CO.,LTD. |