[go: up one dir, main page]

CN105470346A - Method for testing anti-PID performance of semi-finished product cell - Google Patents

Method for testing anti-PID performance of semi-finished product cell Download PDF

Info

Publication number
CN105470346A
CN105470346A CN201510794622.0A CN201510794622A CN105470346A CN 105470346 A CN105470346 A CN 105470346A CN 201510794622 A CN201510794622 A CN 201510794622A CN 105470346 A CN105470346 A CN 105470346A
Authority
CN
China
Prior art keywords
semi
finished product
cell piece
product cell
pid performance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510794622.0A
Other languages
Chinese (zh)
Inventor
侯玥玥
蒋方丹
金井升
金浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
Original Assignee
Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Jinko Solar Co Ltd, Jinko Solar Co Ltd filed Critical Zhejiang Jinko Solar Co Ltd
Priority to CN201510794622.0A priority Critical patent/CN105470346A/en
Publication of CN105470346A publication Critical patent/CN105470346A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)

Abstract

本申请公开了一种半成品电池片抗PID性能的测试方法,包括:将半成品电池片水平放置;在所述半成品电池片的表面上的多个位置点滴上去离子水;观察所述去离子水自然扩散之后的形态;根据所述形态判断所述半成品电池片的抗PID性能。本申请提供的上述半成品电池片抗PID性能的测试方法,能够有效的测量半成品电池片的抗PID性能,且操作方便。

This application discloses a test method for the anti-PID performance of a semi-finished cell, which includes: placing the semi-finished cell horizontally; dripping deionized water on multiple positions on the surface of the semi-finished cell; observing the natural state of the deionized water Form after diffusion; judge the anti-PID performance of the semi-finished cell according to the form. The method for testing the anti-PID performance of the semi-finished cell provided in the present application can effectively measure the anti-PID performance of the semi-finished cell and is easy to operate.

Description

一种半成品电池片抗PID性能的测试方法A test method for anti-PID performance of semi-finished cells

技术领域technical field

本发明涉及太阳能电池制造技术领域,特别是涉及一种半成品电池片抗PID性能的测试方法。The invention relates to the technical field of solar cell manufacturing, in particular to a method for testing the anti-PID performance of semi-finished cells.

背景技术Background technique

PID效应(PotentialInducedDegradation)是一种高强度负电压诱发的组件性能降低现象,指组件在偏压、高温和高湿度的恶劣环境中出现功率衰减的效应,由于光伏组件使用时间长达25年,极有可能遇上较为恶劣的气候环境,PID情况严重时可造成电站输出功率大幅下降,甚至衰减高达90%以上,严重损害运营者和电站投资者的利益。上述失效的原理如下:在系统中,组件串联工作时产生的高输出电压使组件相对铝边框处于高的负电位,在这种负电位的作用下,从铝边框有痕量的正电荷(主要为Na+)通过玻璃、EVA和硅胶等媒介流入电池片表面,在电池片表面的SiNx膜上聚集,中和PN结,从而损害电池片的电性能。目前的电池片的抗PID方式如下:在电池PN结表面与减反膜之间形成一层超薄的氧化层,即二氧化硅层,二氧化硅层可以阻挡正离子对PN结的侵蚀,从而减小PID效应的影响,半成品表面生成的二氧化硅,不做其他特殊的处理,仍带有亲水基团的羟基。PID effect (Potential Induced Degradation) is a phenomenon of component performance degradation induced by high-intensity negative voltage. It refers to the power attenuation effect of components in harsh environments with bias voltage, high temperature and high humidity. Since photovoltaic components have been used for as long as 25 years, they are extremely It is possible to encounter a relatively harsh climate environment. When the PID situation is severe, the output power of the power station may drop sharply, or even attenuate by more than 90%, which seriously damages the interests of operators and power station investors. The principle of the above failure is as follows: In the system, the high output voltage generated when the components work in series puts the components at a high negative potential relative to the aluminum frame. Under the action of this negative potential, there is a trace of positive charge from the aluminum frame (mainly Na + ) flows into the surface of the cell through glass, EVA, silica gel and other media, accumulates on the SiN x film on the surface of the cell, neutralizes the PN junction, and damages the electrical properties of the cell. The current anti-PID method of the cell is as follows: an ultra-thin oxide layer, that is, a silicon dioxide layer, is formed between the surface of the PN junction of the battery and the anti-reflection film. The silicon dioxide layer can block the erosion of the PN junction by positive ions. In order to reduce the influence of PID effect, the silicon dioxide formed on the surface of semi-finished products still has hydroxyl groups of hydrophilic groups without any other special treatment.

现有技术中的一种确认半成品抗PID性能的测试方法如下:取半成品电池片,将去离子饱和水滴在抗PID半成品电池表面,共设置5个点,四角分别设置一个点,中心处具有一点;将该抗PID半成品电池片倾斜成与水平面有一定角度的倾斜状,倾斜度为45度;通过去离子水在抗PID半成品电池片的形态决定,若去离子水在PID半成品电池片上有扩散趋势并且能够沿着倾斜方向顺势流下,则该抗PID半成品电池片的抗PID性能合格。A test method for confirming the anti-PID performance of semi-finished products in the prior art is as follows: take a semi-finished battery, drop deionized saturated water on the surface of the anti-PID semi-finished battery, set a total of 5 points, set a point at the four corners, and a point at the center ;The anti-PID semi-finished cell is inclined to a certain angle with the horizontal plane, and the inclination is 45 degrees; it is determined by the shape of the deionized water on the anti-PID semi-finished cell. If the deionized water diffuses on the PID semi-finished cell trend and can flow down along the inclined direction, the anti-PID performance of the anti-PID semi-finished cell is qualified.

然而,上述检验电池片抗PID性能的方法具有如下缺点:由于将滴去离子水后的半成品倾斜处理,只要有氧化层去离子水都会顺势流下,不能确认硅片表面氧化层的均匀性,例如出现由于某些原因导致部分小区域氧化层相对较薄的情况,则不能进行有效的判断,且该方法需要到特定的地点将滴去离子水后的半成品倾斜处理,操作也有所不便。However, the above-mentioned method for testing the anti-PID performance of the cell has the following disadvantages: since the semi-finished product after dripping deionized water is tilted, as long as there is an oxide layer, the deionized water will flow down, and the uniformity of the oxide layer on the surface of the silicon wafer cannot be confirmed, for example If the oxide layer in some small areas is relatively thin due to some reasons, effective judgment cannot be made, and this method needs to go to a specific place to tilt the semi-finished product after dripping deionized water, and the operation is also inconvenient.

发明内容Contents of the invention

为解决上述问题,本发明提供了一种半成品电池片抗PID性能的测试方法,能够有效的测量半成品电池片的抗PID性能,且操作方便。In order to solve the above problems, the present invention provides a method for testing the anti-PID performance of semi-finished cells, which can effectively measure the anti-PID performance of semi-finished cells and is easy to operate.

本发明提供的一种半成品电池片抗PID性能的测试方法,包括:A kind of test method of anti-PID performance of semi-finished battery sheet provided by the present invention, comprises:

将半成品电池片水平放置;Place semi-finished cells horizontally;

在所述半成品电池片的表面上的多个位置点滴上去离子水;dripping deionized water on multiple positions on the surface of the semi-finished cell;

观察所述去离子水自然扩散之后的形态;Observe the form after the natural diffusion of the deionized water;

根据所述形态判断所述半成品电池片的抗PID性能。Judging the anti-PID performance of the semi-finished cell according to the shape.

优选的,在上述半成品电池片抗PID性能的测试方法中,在所述半成品电池片的表面上的多个位置点滴上去离子水为:Preferably, in the test method of the anti-PID performance of the above-mentioned semi-finished battery sheet, deionized water is dripped at multiple positions on the surface of the semi-finished battery sheet:

利用滴管吸取至少1毫升去离子水,在所述半成品电池片的表面上的多个位置点以上1厘米的位置滴上所述去离子水。Use a dropper to draw at least 1 milliliter of deionized water, and drop the deionized water on the surface of the semi-finished battery sheet at a position 1 cm above multiple points.

优选的,在上述半成品电池片抗PID性能的测试方法中,在所述半成品电池片的表面上的多个位置点滴上去离子水为:Preferably, in the test method of the anti-PID performance of the above-mentioned semi-finished battery sheet, deionized water is dripped at multiple positions on the surface of the semi-finished battery sheet:

在所述半成品电池片的表面上的25个位置点滴上去离子水,且所述25个位置点在所述半成品电池片的表面均匀分布。Deionized water was dripped on 25 positions on the surface of the semi-finished cell, and the 25 points were uniformly distributed on the surface of the semi-finished cell.

优选的,在上述半成品电池片抗PID性能的测试方法中,在所述半成品电池片的表面上的多个位置点滴上去离子水为:Preferably, in the test method of the anti-PID performance of the above-mentioned semi-finished battery sheet, deionized water is dripped at multiple positions on the surface of the semi-finished battery sheet:

在所述半成品电池片的表面上的每个所述位置点滴一滴去离子水,且所述一滴去离子水的体积范围为0.04毫升至0.05毫升。A drop of deionized water is dripped at each of the positions on the surface of the semi-finished cell, and the volume of the drop of deionized water ranges from 0.04 milliliters to 0.05 milliliters.

优选的,在上述半成品电池片抗PID性能的测试方法中,所述根据所述形态判断所述半成品电池片的抗PID性能为:Preferably, in the above-mentioned test method for the anti-PID performance of the semi-finished cell, the judgment of the anti-PID performance of the semi-finished cell according to the shape is:

当所述去离子水的水滴直径不变,则判断所述半成品电池片的抗PID性能不合格。When the diameter of the deionized water droplet remains unchanged, it is judged that the anti-PID performance of the semi-finished cell is unqualified.

优选的,在上述半成品电池片抗PID性能的测试方法中,所述根据所述形态判断所述半成品电池片的抗PID性能为:Preferably, in the above-mentioned test method for the anti-PID performance of the semi-finished cell, the judgment of the anti-PID performance of the semi-finished cell according to the shape is:

当所述去离子水的水滴具有扩散形态,且所述水滴的边缘为锯齿状,则判断所述半成品电池片的抗PID性能不合格。When the water droplet of the deionized water has a diffuse shape and the edge of the water droplet is jagged, it is judged that the anti-PID performance of the semi-finished cell is unqualified.

优选的,在上述半成品电池片抗PID性能的测试方法中,所述根据所述形态判断所述半成品电池片的抗PID性能为:Preferably, in the above-mentioned test method for the anti-PID performance of the semi-finished cell, the judgment of the anti-PID performance of the semi-finished cell according to the shape is:

当所述去离子水的水滴具有扩散形态,且在5秒至10秒之后,各个所述位置点的所述水滴的直径不同,则判断所述半成品电池片的抗PID性能不合格。When the water droplets of the deionized water have a diffuse form, and after 5 seconds to 10 seconds, the diameters of the water droplets at each of the positions are different, it is judged that the anti-PID performance of the semi-finished battery sheet is unqualified.

优选的,在上述半成品电池片抗PID性能的测试方法中,所述根据所述形态判断所述半成品电池片的抗PID性能为:Preferably, in the above-mentioned test method for the anti-PID performance of the semi-finished cell, the judgment of the anti-PID performance of the semi-finished cell according to the shape is:

当各个所述位置点的所述水滴具有扩散形态,且扩散直径相同,边缘平滑,则判断所述半成品电池片的抗PID性能合格。When the water droplets at each of the positions have a diffusion shape, the diffusion diameter is the same, and the edges are smooth, it is judged that the anti-PID performance of the semi-finished cell is qualified.

通过上述描述可知,本发明提供的上述半成品电池片抗PID性能的测试方法,由于将半成品电池片水平放置,在所述半成品电池片的表面上的多个位置点滴上去离子水,观察所述去离子水自然扩散之后的形态,根据所述形态判断所述半成品电池片的抗PID性能,因此避免了倾斜设置的麻烦,也能实时测试,节省测试时间,从而能够有效的测量半成品电池片的抗PID性能,且操作方便。It can be seen from the above description that the test method for the anti-PID performance of the semi-finished battery sheet provided by the present invention, since the semi-finished battery sheet is placed horizontally, deionized water is dripped on multiple positions on the surface of the semi-finished battery sheet, and the deionized water is observed. According to the form after the natural diffusion of ionized water, the anti-PID performance of the semi-finished cell can be judged, thus avoiding the trouble of inclined setting, and can also test in real time, saving test time, so that the anti-PID performance of the semi-finished cell can be effectively measured. PID performance, and easy to operate.

附图说明Description of drawings

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention, and those skilled in the art can also obtain other drawings according to the provided drawings without creative work.

图1为本申请实施例提供的第一种半成品电池片抗PID性能的测试方法的示意图;Fig. 1 is the schematic diagram of the test method of the anti-PID performance of the first kind of semi-finished cell that the embodiment of the present application provides;

图2为本申请实施例提供的第二种半成品电池片抗PID性能的测试方法的示意图。FIG. 2 is a schematic diagram of a second test method for the anti-PID performance of a semi-finished cell provided in an embodiment of the present application.

具体实施方式detailed description

本发明的核心思想在于提供一种半成品电池片抗PID性能的测试方法,能够有效的测量半成品电池片的抗PID性能,且操作方便。The core idea of the present invention is to provide a method for testing the anti-PID performance of semi-finished cells, which can effectively measure the anti-PID performance of semi-finished cells and is easy to operate.

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

本申请实施例提供的第一种半成品电池片抗PID性能的测试方法如图1所示,图1为本申请实施例提供的第一种半成品电池片抗PID性能的测试方法的示意图。该方法包括如下步骤:The first test method for the anti-PID performance of a semi-finished cell provided in the embodiment of the present application is shown in FIG. 1 , which is a schematic diagram of the first test method for the anti-PID performance of a semi-finished cell provided in the embodiment of the present application. The method comprises the steps of:

S1:将半成品电池片水平放置;S1: place the semi-finished cells horizontally;

在该步骤中,只需将电池片水平放置,且在后续步骤中也一直水平放置即可,寻找操作平台更为便捷快速,无需像现有技术中那样倾斜电池片,从而避免了不必要的麻烦。In this step, it is only necessary to place the battery slices horizontally, and it can be placed horizontally all the time in the subsequent steps. It is more convenient and fast to find the operating platform, and there is no need to tilt the battery slices as in the prior art, thus avoiding unnecessary trouble.

S2:在所述半成品电池片的表面上的多个位置点滴上去离子水;S2: dripping deionized water on multiple positions on the surface of the semi-finished cell;

在该步骤中,位置点的选取要依据实际情况,且在电池片的表面上均匀分布,以使测试更为全面。In this step, the location points should be selected according to the actual situation, and they should be evenly distributed on the surface of the battery sheet, so as to make the test more comprehensive.

S3:观察所述去离子水自然扩散之后的形态;S3: observing the form of the deionized water after natural diffusion;

S4:根据所述形态判断所述半成品电池片的抗PID性能。S4: Judging the anti-PID performance of the semi-finished cell according to the shape.

该步骤的测试原理为:抗PID半成品电池片表面生成的二氧化硅,不做其他特殊的处理,仍带为亲水基团的羟基,具有亲水性,而不具有抗PID半成品电池片表面不具有亲水性。一滴液体落在水平固体表面上,当达到平衡时形成的接触角与各界面张力之间符合杨氏公式,以此来判断抗PID半成品电池片正表面亲水性优劣,从而确定抗PID半成品电池片是否合格。The test principle of this step is: the silicon dioxide generated on the surface of the anti-PID semi-finished cell, without other special treatment, still has a hydroxyl group as a hydrophilic group, which is hydrophilic, and does not have the surface of the anti-PID semi-finished cell Not hydrophilic. When a drop of liquid falls on a horizontal solid surface, when the balance is reached, the contact angle and the interfacial tension are in line with Young's formula, so as to judge the hydrophilicity of the front surface of the anti-PID semi-finished cell, so as to determine the anti-PID semi-finished product Whether the battery sheet is qualified.

通过上述描述可知,本申请实施例提供的上述半成品电池片抗PID性能的测试方法,由于将半成品电池片水平放置,在所述半成品电池片的表面上的多个位置点滴上去离子水,观察所述去离子水自然扩散之后的形态,根据所述形态判断所述半成品电池片的抗PID性能,因此避免了倾斜设置的麻烦,能实时测试,节省测试时间,从而能够有效的测量半成品电池片的抗PID性能,且操作方便。It can be seen from the above description that the test method for the anti-PID performance of the above-mentioned semi-finished battery sheet provided in the embodiment of the present application, since the semi-finished battery sheet is placed horizontally, deionized water is dripped on multiple positions on the surface of the semi-finished battery sheet, and the observed The shape after the natural diffusion of deionized water is described, and the anti-PID performance of the semi-finished cell is judged according to the shape, so the trouble of inclined setting is avoided, real-time testing can be performed, and test time is saved, so that the semi-finished cell can be effectively measured. Anti-PID performance, and easy to operate.

本申请实施例提供的第二种半成品电池片抗PID性能的测试方法如图2所示,图2为本申请实施例提供的第二种半成品电池片抗PID性能的测试方法的示意图。该方法包括如下步骤:The second test method for the anti-PID performance of the semi-finished cell provided in the embodiment of the present application is shown in Figure 2, which is a schematic diagram of the second test method for the anti-PID performance of the semi-finished cell provided in the embodiment of the present application. The method comprises the steps of:

A1:将半成品电池片水平放置;A1: Place the semi-finished cells horizontally;

A2:利用滴管吸取至少1毫升去离子水,在所述半成品电池片的表面上的25个位置点以上1厘米的位置滴上所述去离子水,且所述25个位置点在所述半成品电池片的表面均匀分布,而且在所述半成品电池片的表面上的每个所述位置点滴一滴去离子水,且所述一滴去离子水的体积范围为0.04毫升至0.05毫升;A2: Use a dropper to draw at least 1 milliliter of deionized water, and drop the deionized water at a position 1 cm above 25 points on the surface of the semi-finished cell, and the 25 points are on the surface of the semi-finished cell. The surface of the semi-finished battery sheet is evenly distributed, and a drop of deionized water is dripped at each of the positions on the surface of the semi-finished battery sheet, and the volume of the drop of deionized water ranges from 0.04 ml to 0.05 ml;

A3:观察所述去离子水自然扩散之后的形态;A3: observe the form after the natural diffusion of the deionized water;

A4:根据所述形态判断所述半成品电池片的抗PID性能。A4: Judging the anti-PID performance of the semi-finished cell according to the shape.

在该步骤中,可以具体的分为如下四种情况:In this step, it can be specifically divided into the following four situations:

(1)当所述去离子水的水滴直径不变,则判断所述半成品电池片的抗PID性能不合格;(1) When the droplet diameter of the deionized water is constant, it is judged that the anti-PID performance of the semi-finished cell is unqualified;

(2)当所述去离子水的水滴具有扩散形态,且水滴边缘扩散的速度不一致,导致所述水滴的边缘为锯齿状,则该抗PID半成品电池片表面抗PID性能均匀性差,判断所述半成品电池片的抗PID性能不合格;(2) When the water droplet of the deionized water has a diffusion form, and the speed of diffusion of the edge of the water droplet is inconsistent, causing the edge of the water droplet to be jagged, then the anti-PID performance uniformity of the surface of the anti-PID semi-finished cell is poor, and it is judged that the The anti-PID performance of semi-finished cells is unqualified;

(3)当所述去离子水的水滴具有扩散形态,且一滴水在5秒至10秒之后,各个所述位置点的所述水滴的直径不同,则该抗PID半成品电池片表面抗PID性能均匀性差,判断所述半成品电池片的抗PID性能不合格;(3) When the water droplets of the deionized water have a diffuse form, and after a drop of water is 5 seconds to 10 seconds, the diameters of the water droplets at each of the positions are different, then the anti-PID performance of the surface of the anti-PID semi-finished cell If the uniformity is poor, it is judged that the anti-PID performance of the semi-finished cell is unqualified;

(4)当各个所述位置点的所述水滴具有扩散形态,且水滴边缘扩散的速度基本一致,扩散直径相同,边缘平滑,水滴近似圆形,则判断所述半成品电池片的抗PID性能合格。(4) When the water droplets at each of the position points have a diffusion form, and the diffusion speed of the water droplet edge is basically the same, the diffusion diameter is the same, the edge is smooth, and the water droplet is approximately circular, then it is judged that the anti-PID performance of the semi-finished cell is qualified .

上述实施例采用一直水平放置的方法处理待测试的抗PID半成品电池片,水滴在抗PID半成品电池片表面不受外力,自由扩散,若半成品电池片表面氧化层厚度不均匀,可以根据水滴扩散的形态对其抗PID性能进行有效的判断,从而测试半成品电池片抗PID性能均匀性,如果某个局部均匀性差,则利于进一步排查抗PID设备故障,上述实施例提供的方法,由于水平测试平台更简易,更容易获得,因此测试更为便捷。The above-described embodiment adopts the method of always horizontally placing the anti-PID semi-finished battery sheet to be tested. The water droplets are not subjected to external force on the surface of the anti-PID semi-finished battery sheet and can freely diffuse. The shape can effectively judge its anti-PID performance, so as to test the uniformity of anti-PID performance of semi-finished cells. If the uniformity of a certain part is poor, it will help to further troubleshoot the anti-PID equipment failure. Simpler, easier to obtain, and therefore easier to test.

对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (8)

1. a method of testing for the anti-PID performance of semi-finished product cell piece, is characterized in that, comprising:
By semi-finished product cell piece horizontal positioned;
Multiple positions drop on the surface of described semi-finished product cell piece gets on ionized water;
Observe the form after described deionized water natural diffuseness;
The anti-PID performance of described semi-finished product cell piece is judged according to described form.
2. the method for testing of the anti-PID performance of semi-finished product cell piece according to claim 1, is characterized in that, the ionized water that gets on of the multiple positions drop on the surface of described semi-finished product cell piece is:
Utilize dropper to draw at least 1 ml deionized water, more than the multiple location points on the surface of described semi-finished product cell piece described deionized water is dripped in the position of 1 centimetre.
3. the method for testing of the anti-PID performance of semi-finished product cell piece according to claim 2, is characterized in that, the ionized water that gets on of the multiple positions drop on the surface of described semi-finished product cell piece is:
25 position drops on the surface of described semi-finished product cell piece get on ionized water, and described 25 location points distribute at the surface uniform of described semi-finished product cell piece.
4. the method for testing of the anti-PID performance of semi-finished product cell piece according to claim 3, is characterized in that, the ionized water that gets on of the multiple positions drop on the surface of described semi-finished product cell piece is:
Each described position drop deionized water on the surface of described semi-finished product cell piece, and the volume range of a described deionized water is 0.04 milliliter to 0.05 milliliter.
5. the method for testing of the anti-PID performance of the semi-finished product cell piece according to any one of claim 1-4, is characterized in that, describedly judges that the anti-PID performance of described semi-finished product cell piece is according to described form:
When the drop diameter of described deionized water is constant, then judge the anti-PID performance inconsistency lattice of described semi-finished product cell piece.
6. the method for testing of the anti-PID performance of semi-finished product cell piece according to claim 5, is characterized in that, describedly judges that the anti-PID performance of described semi-finished product cell piece is according to described form:
When the water droplet of described deionized water has spreading morphology, and the edge of described water droplet is zigzag, then judge the anti-PID performance inconsistency lattice of described semi-finished product cell piece.
7. the method for testing of the anti-PID performance of semi-finished product cell piece according to claim 6, is characterized in that, describedly judges that the anti-PID performance of described semi-finished product cell piece is according to described form:
When the water droplet of described deionized water has spreading morphology, and after 5 seconds to 10 seconds, the diameter of the described water droplet of location point described in each is different, then judge the anti-PID performance inconsistency lattice of described semi-finished product cell piece.
8. the method for testing of the anti-PID performance of semi-finished product cell piece according to claim 7, is characterized in that, describedly judges that the anti-PID performance of described semi-finished product cell piece is according to described form:
When the described water droplet of location point described in each has spreading morphology, and diffusion diameter is identical, edge-smoothing, then judge that the anti-PID performance of described semi-finished product cell piece is qualified.
CN201510794622.0A 2015-11-18 2015-11-18 Method for testing anti-PID performance of semi-finished product cell Pending CN105470346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510794622.0A CN105470346A (en) 2015-11-18 2015-11-18 Method for testing anti-PID performance of semi-finished product cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510794622.0A CN105470346A (en) 2015-11-18 2015-11-18 Method for testing anti-PID performance of semi-finished product cell

Publications (1)

Publication Number Publication Date
CN105470346A true CN105470346A (en) 2016-04-06

Family

ID=55607867

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510794622.0A Pending CN105470346A (en) 2015-11-18 2015-11-18 Method for testing anti-PID performance of semi-finished product cell

Country Status (1)

Country Link
CN (1) CN105470346A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1878888A (en) * 2004-06-04 2006-12-13 应用微型构造公司 Controlled vapor deposition of multilayered coatings adhered by an oxide layer
CN103336236A (en) * 2013-06-14 2013-10-02 晶澳(扬州)太阳能科技有限公司 Monitoring testing method of long-time photo induced deterioration property of solar battery
CN103956974A (en) * 2014-05-21 2014-07-30 常州天合光能有限公司 Testing method for determining PID-resisting performance of semi-finished battery piece

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1878888A (en) * 2004-06-04 2006-12-13 应用微型构造公司 Controlled vapor deposition of multilayered coatings adhered by an oxide layer
CN103336236A (en) * 2013-06-14 2013-10-02 晶澳(扬州)太阳能科技有限公司 Monitoring testing method of long-time photo induced deterioration property of solar battery
CN103956974A (en) * 2014-05-21 2014-07-30 常州天合光能有限公司 Testing method for determining PID-resisting performance of semi-finished battery piece

Similar Documents

Publication Publication Date Title
CN104681657B (en) The manufacture method of solar cell and obtained solar cell
CN101976702B (en) Manufacturing process and structure of selective emitter solar cell
CN107394009A (en) A kind of wet etching method, double-side solar cell and preparation method thereof
CN107904663A (en) A kind of crystalline silicon polishing additive and its application method for crystal silicon polishing
CN116031148A (en) PN junction preparation method of solar cell and solar cell
CN104993014A (en) Individual remaking method of diffused defective sheets
CN111370341B (en) Method for testing interface recombination rate of crystalline silicon cell
Gou et al. PID testing method suitable for process control of solar cells mass production
CN111337389A (en) Silicon wafer hydrophilicity detection device and detection method
CN105470346A (en) Method for testing anti-PID performance of semi-finished product cell
CN102437240A (en) Solar cell edge etching method
CN105304758B (en) A method of it reduces and leaks electricity at back contacts photovoltaic cell perforation electrode
CN105245187B (en) Method and test device for monitoring solar cell piece anti-PID performance
JPWO2014024297A1 (en) Manufacturing method of solar cell
CN103018564B (en) Method for testing diffused layer resistance of finished cell
CN105720134A (en) Production technology of solar cell panel
CN103956974A (en) Testing method for determining PID-resisting performance of semi-finished battery piece
CN105406819B (en) Method for testing reverse breakdown performance of solar cell
CN109037375B (en) Solar cell and solar cell module
CN109932337B (en) Device and method for evaluating compactness of silicon-based back sealing film
JP2018016511A (en) Composition for protective layer formation, solar cell element, method for producing solar cell element and solar cell
CN105914239B (en) A kind of preparation method of N-type double-side cell
JP6270889B2 (en) Manufacturing method of solar cell
CN106783575A (en) The wet etching method of silicon chip and the production method of solar cell
CN113745369B (en) A method to improve the welding tension of crystalline silicon solar cells with unqualified welding tension

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20160406