CN105470284B - A kind of OLED screen body of thin-film package and preparation method thereof - Google Patents
A kind of OLED screen body of thin-film package and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention relates to OLED screen bodies of thin-film package and preparation method thereof, the OLED screen body of the thin-film package includes electrically-conductive backing plate and thin-film encapsulation layer, organic function layer is set in the confined space that the electrically-conductive backing plate and the thin-film encapsulation layer are formed, the second electrode lay is provided with above the organic function layer, adjacent the second electrode lay is insulated from each other, planarization layer is provided between the thin-film encapsulation layer and the second electrode lay, the planarization layer forms continuous level structure far from the side of the second electrode lay, the thin-film encapsulation layer fitting is arranged in the continuous level structure.Since thin-film encapsulation layer is formed in the side of the opposite continuous level of the planarization layer, can be fitted closely with planarization layer, caliper uniformity is good.Not only packaging effect is good, and can thin-film encapsulation layer it is not easily damaged.
Description
Technical field
The present invention relates to organic electroluminescence device technical fields, and in particular to a kind of OLED screen body of thin-film package and its
Preparation method.
Background technique
By nearly development in 30 years, (full name in English is Organic Light to the OLED screen body of thin-film package
Emitting Device, referred to as OLED) as next-generation illumination and display technology, have colour gamut is wide, response is fast, wide viewing angle,
The advantages that pollution-free, high contrast, planarization, a degree of application is obtained in illumination and display.Typical film
The OLED screen body of encapsulation generally comprises transparent substrate, transparent anode, reflecting electrode and setting between two electrodes organic
Functional layer.The cathode of usual bottom illuminating OLED is planar metal, has good reflecting effect.
The OLED screen body (OLED) of thin-film package includes active electroluminescent device (AMOLED) and passive electroluminescent device
Part (PMOLED), wherein passive electroluminescent device (PMOLED) has Ka band, organic one functional layer and anode strap.
PMOLED is used to efficiency highest when display text and icon, is suitable for production the small screen (2-3 inches of diagonal line), often application and movement
Phone, palm PC and MP3 player.With popularizing for intelligence wearing product, market proposes PMOLED display screen super
Thin, flexible demand.For shielding body generally for bending, need just to be able to achieve its bending using thin-film package.
However since there are insulated column (Separator or rib) knots in the OLED screen body PMOLED of passive film encapsulation
Structure, the upper end are uneven, therefore when use thin film encapsulation technology, thin-film encapsulation layer, which is easy to appear thicknesses of layers, discontinuously to be caused
The problem of poor sealing effect.
Summary of the invention
The technical problem to be solved by the present invention is to existing passive electroluminescent devices (PMOLED) using thin-film package is
It is easy to appear the damaged problem for causing encapsulation not tight, so that a kind of OLED screen body of thin-film package is provided, the thin-film package
OLED screen body by setting there is the planarization layer of continuous level structure can fit closely thin-film encapsulation layer with it, so as to
Enough prevent the damaging problem of thin-film encapsulation layer.
In order to solve the above technical problems, the present invention is achieved by the following technical solutions:
A kind of OLED screen body of thin-film package, including electrically-conductive backing plate and thin-film encapsulation layer, the electrically-conductive backing plate and described
Organic function layer is set in the confined space that thin-film encapsulation layer is formed, is provided with second electrode above the organic function layer
Layer, adjacent the second electrode lay is insulated from each other, is provided with planarization layer between the thin-film encapsulation layer and the second electrode lay,
The planarization layer forms continuous level structure far from the side of the second electrode lay, and the thin-film encapsulation layer fitting setting exists
In the continuous level structure.
Insulated from each other, the upper end of the planarization layer and institute are realized between the adjacent the second electrode lay by insulated column
Continuous level structure is collectively formed in the top for stating insulated column, and the thin-film encapsulation layer fitting is arranged in the continuous level structure
On.
Realized by insulated column insulated from each other between the adjacent the second electrode lay, the planarization layer is filled in isolation
Between column and after covering the insulated column, the upper end forms continuous level structure, and the thin-film encapsulation layer fitting is arranged described
In continuous level structure.
The electrically-conductive backing plate includes the first electrode layer of substrate and setting on the substrate, is set in the first electrode layer
Several pixel confining layers for forming continuous grids structure are equipped with, fill organic function layer, the pixel in the network
It is provided with insulated column above confining layers, the second electrode lay on adjacent organic function layer is isolated from each other insulation by the insulated column.
Light transmittance > 70% of the planarization layer, refractive index 1.4-2.3, the planarization layer is by organic material
And/or inorganic material is prepared.
The planarization layer is by NPB, ALq3, one of TBD, PBD, CBP or a variety of be prepared；For or
Such as one of acrylic, Tai Fulong, polyimides a variety of are prepared.
The planarization layer and encapsulated layer is by poly- hydrogen silazane class material, its derivative or poly- hydrogen silazane class material
The integral structure that composition is prepared.
Poly- hydrogen silazane class material compositions include poly- hydrogen silazane class material, light curing agent and photoinitiator.
A kind of preparation method of the OLED screen body of thin-film package, includes the following steps:
S1, production coats organic photoresist layer on electrically-conductive backing plate, and exposure development forms it into picture having an open structure
Plain confining layers；
S2, insulated column is prepared by the technique of gluing, exposure, development, etching in the top of pixel confining layer, using vapor deposition
Mask plate deposits organic function layer in pixel confining layer having an open structure, in the second electricity of disposed thereon of organic function layer
Pole layer, the insulated column keep the adjacent the second electrode lay insulated from each other；
S3, the planarization layer that organic material or inorganic material are made above the second electrode lay, the planarization layer
It being filled between the insulated column, the upper end and insulated column upper end form continuous level structure, or,
After the planarization layer is filled between insulated column and covers the insulated column, the upper end forms continuous level knot
Structure；
S4, it is deposited to form thin-film encapsulation layer in the continuous level superstructure.
The preparation method of the OLED screen body of another thin-film package, includes the following steps:
S1, production coats organic photoresist layer on electrically-conductive backing plate, and exposure development forms it into picture having an open structure
Plain confining layers；
S2, insulated column is prepared by the technique of gluing, exposure, development, etching in the top of pixel confining layer, using vapor deposition
Mask plate deposits organic function layer in pixel confining layer having an open structure, in the second electricity of disposed thereon of organic function layer
Pole layer, the insulated column keep the adjacent the second electrode lay insulated from each other；
S3, above the second electrode lay wet coating or the poly- hydrogen silazane class material of silk-screen printing or derivatives thereof,
Or poly- hydrogen silazane class material compositions, after being filled between insulated column and covering the insulated column, solidification can form one
The planarization layer and thin-film encapsulation layer of structure.
Poly- hydrogen silazane class material compositions in the step S3 include poly- hydrogen silazane class material, light curing agent and light
Initiator.
The above technical solution of the present invention has the following advantages over the prior art:
A kind of OLED screen body of thin-film package of the invention, including electrically-conductive backing plate and thin-film encapsulation layer, the conductive base
Organic function layer is set in the confined space that plate and the thin-film encapsulation layer are formed, is provided with above the organic function layer
The second electrode lay, adjacent the second electrode lay is insulated from each other, is provided between the thin-film encapsulation layer and the second electrode lay
Planarization layer, the planarization layer form continuous level structure, the thin-film encapsulation layer far from the side of the second electrode lay
Fitting is arranged in the continuous level structure.Since thin-film encapsulation layer is formed in the one of the continuous level of the planarization layer
Side, therefore can be fitted closely with planarization layer, and form a film that continuity is good, and packaging effect is good, and thin-film encapsulation layer do not allow it is fragile
Damage.In addition, the planarization layer that uses of the present invention is prepared using organic material and/or inorganic material, preferably light transmittance >
70%, refractive index is the transparent material of 1.4-2.3, is applicable to transparent screen body or back side illuminated layer.
As another embodiment, the planarization layer and encapsulated layer are by poly- hydrogen silazane class material, its derivative
The integral structure that object or poly- hydrogen silazane class material compositions are prepared.This integral structure has excellent sealing effect,
Extend the service life of device.
Detailed description of the invention
In order to make the content of the present invention more clearly understood, with reference to the accompanying drawing, the present invention is made further detailed
Thin explanation, wherein
Fig. 1 is the OLED screen body structural schematic diagram of thin-film package of the present invention；
Fig. 2 is the structural schematic diagram of another embodiment of OLED screen body of thin-film package of the present invention；
Appended drawing reference indicates in figure are as follows:
101- substrate, 102- first electrode layer, 103- organic function layer, 104- the second electrode lay, 105- insulated column, 106-
Planarization layer, 107- thin-film encapsulation layer.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.
On the contrary, providing these embodiments, so that the disclosure will be thorough and complete, and design of the invention will be fully conveyed to
Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, the area Ceng He can be exaggerated
The size and relative size in domain.It should be understood that when element such as layer, region or substrate are referred to as " being formed in " or " setting
" another element "upper" when, which can be arranged directly on another element, or there may also be intermediary elements.
On the contrary, intermediary element is not present when element is referred to as on " being formed directly into " or " being set up directly on " another element.
As shown in Figure 1, a kind of OLED screen body of thin-film package of the invention, including electrically-conductive backing plate and thin-film encapsulation layer 107,
Organic function layer 103 is set in the confined space that the electrically-conductive backing plate and the thin-film encapsulation layer 107 are formed, described is organic
The top of functional layer 103 is provided with the second electrode lay 104, and adjacent the second electrode lay 104 is insulated from each other, the thin-film encapsulation layer
Planarization layer 106 is provided between 107 and the second electrode lay 104, the planarization layer 106 is far from the second electrode lay
104 side forms continuous level structure, and the fitting of thin-film encapsulation layer 107 is arranged in the continuous level structure.
Specifically, as shown in Fig. 2, it is exhausted each other by the realization of insulated column 105 between the adjacent the second electrode lay 104
Continuous level structure, the film envelope is collectively formed in the top of edge, the upper end of the planarization layer 106 and the insulated column 105
The fitting of layer 107 is filled to be arranged in the continuous level structure.
As another embodiment, it is realized between the adjacent the second electrode lay 104 by insulated column 105 exhausted each other
Edge, after the planarization layer 106 is filled between insulated column 105 and covers the insulated column 105, the upper end forms continuous level
Structure, the fitting of thin-film encapsulation layer 107 are arranged in the continuous level structure.
The electrically-conductive backing plate includes substrate 101 and the first electrode layer 102 that is arranged on the substrate 101, and described first
It is provided with several pixel confining layers 108 for forming continuous grids structure on electrode layer 102, is filled in the network organic
Functional layer 103, is provided with insulated column 105 above the pixel confining layer 108, and the insulated column 105 is by adjacent organic function layer
The second electrode lay 104 on 103 is isolated from each other insulation.
Light transmittance > 70% of the planarization layer 106, refractive index 1.4-2.3, the planarization layer 106 is by having
Machine material and/or inorganic material are prepared.
The planarization layer can be Small molecule organic materials: preferred molecular weight is between 500-1000, material forbidden band
Width is between 2.0-3.0eV.Such as NPB, ALq3, TBD, PBD, CBP etc., such material can pass through the side of vacuum thermal evaporation
It is prepared by formula.
The planarization layer can be polymer material: such as acrylic, Tai Fulong, polyimides.Such material can
It is prepared in a manner of through printing, silk-screen, heat deposition etc..
The planarization layer can be inorganic material: such as ZnSe, MoO3、WO3One of or a variety of be prepared.Such
Material can be prepared by modes such as vacuum thermal evaporation, sputterings.
The planarization layer can be by poly- hydrogen silazane class material, its derivative or poly- hydrogen silazane class material compositions
The integral structure being prepared.Poly- hydrogen silazane molecular formula are as follows: [SiH2NH]n；The poly- hydrogen silazane class material compositions packet
Include poly- hydrogen silazane class material, light curing agent and photoinitiator.
According to the difference of the thickness of planarization layer 106 and the material used, there are following embodiments.
Embodiment 1
As shown in Figure 1, the OLED screen body of the thin-film package of the present embodiment, including substrate 101 and setting are in the substrate 101
On first electrode layer 102 (anode), several pixels limits for forming continuous grids structures are provided in the first electrode layer 102
Given layer 108 fills organic function layer 103 in the network, is provided with insulated column above the pixel confining layer 108
105, the second electrode lay 104 (cathode) on adjacent organic function layer 103 is isolated from each other insulation by the insulated column 105.It is shown
Organic function layer 103 include stack setting hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electronics note
Enter layer, wherein hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer can be omitted one or more layers.
The top of the second electrode lay 104 is provided with planarization layer 106, and the planarization layer 106 is filled in described
Insulated column 105 between and after covering the insulated column 105, the upper end forms continuous level structure, the thin-film encapsulation layer 107
Fitting is arranged in the continuous level structure.The planarization layer is the material forbidden band by molecular weight between 500-1000
Width is between 2.0-3.0eV, such as NPB, ALq3, TBD, PBD, CBP etc., such material can pass through the side of vacuum thermal evaporation
It is prepared by formula；Can be polymer material: such as acrylic, Tai Fulong, polyimides, such material can be by beating
It is prepared by the modes such as print, silk-screen, heat deposition.
The preparation method of the OLED screen body of the thin-film package of the present embodiment, includes the following steps:
S1, first electrode layer 102 being made on the substrate 101, being coated with organic photoresist layer, exposure development forms it into tool
There is the pixel confining layer 108 of hatch frame；
S2, insulated column 105 is prepared by the technique of gluing, exposure, development, etching in the top of pixel confining layer, used
Vapor deposition mask plate deposits organic function layer 103 in pixel confining layer having an open structure, in the top of organic function layer 103
The second electrode lay 104 is deposited, the insulated column 105 keeps the adjacent the second electrode lay 104 insulated from each other；
S3, inorganic material formation planarization layer 106, the planarization layer 106 are deposited above the second electrode lay 104
After being filled between the insulated column and covering the insulated column 105, the upper end forms continuous level structure；Or by beating
The modes such as print, silk-screen, heat deposition prepare the planarization layer 106 of the materials such as acrylic, Tai Fulong, polyimides；
S4, thin-film encapsulation layer 107 is formed by the SiN of CVD silence 1um thickness in the continuous level superstructure.
The thin-film encapsulation layer of the present embodiment is formed in the side of the continuous level of the planarization layer, thus can with it is flat
Smoothization layer fits closely, and film forming continuity is good, and packaging effect is good, and thin-film encapsulation layer is not easily damaged.In addition, the present invention adopts
The planarization layer is prepared using organic material and/or inorganic material, and preferably light transmittance > 70%, refractive index are
The transparent material of 1.4-2.3 is applicable to transparent screen body or back side illuminated layer.
Embodiment 2
As shown in Fig. 2, the OLED screen body structure of the thin-film package of the present embodiment is with embodiment 1, wherein planarization layer 106 is filled out
It fills between insulated column 105, continuous level structure, the film envelope is collectively formed in the top of the upper end and the insulated column 105
The fitting of layer 107 is filled to be arranged in the continuous level structure.
Preparation method is with the OLED screen body of the thin-film package of embodiment 1, wherein step S3 are as follows:
Planarization layer 106, the planarization layer 106 are formed in vapor deposition inorganic material above the second electrode lay 104
It is filled between the insulated column, continuous level structure is collectively formed in the upper end and insulated column upper end；Or pass through printing, silk
The modes such as print, heat deposition prepare the planarization layer 106 of organic Material texture, and the upper end and insulated column upper end are collectively formed continuous flat
Face structure；
Selected inorganic material is NPB, ALq in the embodiment3, one of TBD, PBD, CBP or a variety of, organic material is
Acrylic, Tai Fulong, polyimides.The encapsulating film 107 is prepared using Sputter alumina layer.
The thin-film encapsulation layer of the present embodiment is formed in the side of the continuous level of the planarization layer, thus can with it is flat
Smoothization layer fits closely, and film forming continuity is good, and packaging effect is good, and thin-film encapsulation layer is not easily damaged.In addition, the present invention adopts
The planarization layer is prepared using organic material and/or inorganic material, and preferably light transmittance > 70%, refractive index are
The transparent material of 1.4-2.3 is applicable to transparent screen body or back side illuminated layer.
Embodiment 3
As shown in Figure 1, the OLED screen body structure of the thin-film package of the present embodiment is with embodiment 1, wherein 106 He of planarization layer
Thin-film encapsulation layer 107 is the integral structure being prepared by poly- hydrogen silazane class material.Silazane class material molecule formula is such as
[SiH2NH], such material is prepared on the second electrode lay by way of wet coating or silk-screen printing, the poly- hydrogen silicon nitrogen
Alkanes material is reacted with the moisture of air and oxygen becomes cured film, forms the planarization layer 106 of integral structure.Pass through CVD later
Mode silence SiN or SiO as thin-film encapsulation layer 107.
Wherein silazane encounters water, the reaction mechanism is as follows for oxygen, and final padded coaming is silicon dioxide layer.
-[SiH2NH]n-+O2→SiO2+NH3
and
-[SiH2NH]n-+H2O→SiO2+NH3+H2
The preparation method of the OLED screen body of the thin-film package of the present embodiment, includes the following steps:
S1, production coats organic photoresist layer on electrically-conductive backing plate, and exposure development forms it into picture having an open structure
Plain confining layers 108；
S2, insulated column 105 is prepared by the technique of gluing, exposure, development, etching in the top of pixel confining layer, used
Vapor deposition mask plate deposits organic function layer 103 in pixel confining layer having an open structure, in the top of organic function layer 103
The second electrode lay 104 is deposited, the insulated column 105 keeps the adjacent the second electrode lay 104 insulated from each other；
S3, wet coating or the poly- hydrogen silazane class material of silk-screen printing or its derivative above the second electrode lay 104
Object solidifies the planarization layer that can form integral structure after being filled between insulated column 105 and covering the insulated column 105
106.Depositing inorganic films encapsulated layer 107 later.
The planarization layer 106 of the present embodiment is reacted by poly- hydrogen silazane class material with water, oxygen in air, final product
It is Si oxide.This integral structure has excellent sealing effect, extends the service life of device.
Embodiment 4
As shown in Figure 1, the OLED screen body structure of the thin-film package of the present embodiment is with embodiment 2, wherein 106 He of planarization layer
Thin-film encapsulation layer 107 is the integral structure being prepared by poly- hydrogen silazane class material compositions.The poly- hydrogen silazane class material
Feed composition includes following components:
100 parts of derivative material of dimerization hydrogen silazane are radix:
Crosslinking agent is that 5wt%-50wt%, the photoinitiator of dimerization hydrogen silazane derivative material are crosslinking agent
5wt%-50wt% mass parts；
Levelling agent is the 0wt%-10wt% of resin；
The crosslinking agent preferably is three acrylic acid trihydroxy methyl propyl ester, three acrylic acid trihydroxy methyls of ethylene oxide modification
Propyl ester or three acrylic acid trihydroxy methyl propyl ester of propylene oxide modification, specially pentaerythritol triacrylate, pentaerythrite four
Acrylate, dipentaerythritol hexaacrylate, Dipentaerythritol Pentaacrylate, dipentaerythritol tetraacrylate, in oneself
The sour two trihydroxy methyl propyl ester of dipentaerythritol hexaacrylate, tetrapropylene of ester modification.
The photoinitiator is acetophenone based compound or diimidazole based compound.
The acetophenone based compound be to dimethylamine acetophenone (p-dimethylamino-acetophen-one), a,
A' dimethoxy azoxy acetophenone (a, a '-dimethoxyazoxyacetophen-one), 2,2'- dimethyl -2- phenyl
Acetophenone (2,2'-dimethyl-2-phenylaceto-phen-one), acetanisole (p-
Methoxyacetophenone), 2- methyl-1-(4- methylthiophenyi)-2- morpholino-1- acetone (2-methyl-l- (4-
Methylthio phenyl) -2-morp-holino-propane-l-one), 2- benzyl -2-N, TMSDMA N dimethylamine -1- (4- morpholine
For phenyl)-l- butanone (2-benzyl-2-N, N-dimethylamino-1- (4-morpholinophenyl) -1-
butanone)。
Diimidazole based compound (biimidazole) is bis- (o- the chlorphenyl) -4,4' of 2,2'-, two miaow of 5,5'- tetraphenyl
Azoles [2,2'-bis (o-chlorophenyl) -4,4', 5,5'-tetraphenyl-biimida-zole], bis- (the adjacent first of 2,2'-
Base phenyl) -4,4', 5,5'- tetraphenyl diimidazole [2,2'-bis (o-fluoro-phenyl) -4,4', 5,5'-
tetraphenylbiimidazole]。
Photoinitiator preferred 2- benzyl -2-N, TMSDMA N dimethylamine -1- (4- morphlinophenyl) -1- butanone and bis- (the 2- chlorine of 2,2'-
Phenyl) -4,4', 5,5'- tetraphenyl diimidazoles mixture, the two mass ratio be 30-50%:50-70%.
Levelling agent is acrylic acid modified fluorine carbon levelling agent (manufacturer is Efka, model EFKA3600).Solvent is
Propylene glycol methyl ether acetate or 3- ethoxyl ethyl propionate.
The preparation method of the present embodiment with embodiment 3, wherein it is described the step of S3 in solidification be using ultraviolet light
The cross-linking polymerization for causing poly- hydrogen silazane class material compositions forms the planarization layer (106) and thin-film package of integral structure
Layer (107).
The planarization layer 106 and encapsulated layer 107 of the present embodiment are by poly- hydrogen silazane class material, its derivative or poly- hydrogen silicon
The integral structure that azane class material compositions are prepared.This integral structure has excellent sealing effect, extends device
Service life.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (9)
1. a kind of passive electroluminescent screen body (PMOLED) of thin-film package, including electrically-conductive backing plate and thin-film encapsulation layer (107), institute
Organic function layer (103) are set in the confined space that the electrically-conductive backing plate and the thin-film encapsulation layer (107) stated are formed, described has
It is provided with above machine functional layer (103) the second electrode lay (104), adjacent the second electrode lay (104) is insulated from each other, feature
It is,
It is provided between the thin-film encapsulation layer (107) and the second electrode lay (104) planarization layer (106), it is described adjacent
The second electrode lay (104) between by insulated column (105) realize it is insulated from each other, the planarization layer (106) is filled in
Between insulated column (105) and after covering the insulated column (105), the upper end forms continuous level structure, the thin-film encapsulation layer
(107) fitting is arranged in the continuous level structure.
2. the passive electroluminescent screen body (PMOLED) of thin-film package according to claim 1, which is characterized in that described to lead
Electric substrate includes the first electrode layer (102) of substrate (101) and setting on the substrate (101), the first electrode layer
(102) it is provided with several pixel confining layers (108) for forming continuous grids structure on, fills organic function in the network
Ergosphere (103), pixel confining layer (108) top are provided with insulated column (105), and the insulated column (105) will be adjacent organic
The second electrode lay (104) in functional layer (103) is isolated from each other insulation.
3. the passive electroluminescent screen body (PMOLED) of thin-film package according to claim 1, which is characterized in that described flat
Light transmittance > 70% of smoothization layer (106), refractive index 1.4-2.3, the planarization layer (106) be by organic material and/or
Inorganic material is prepared.
4. the passive electroluminescent screen body (PMOLED) of thin-film package according to claim 3, which is characterized in that described
Planarization layer is by NPB, ALq3, one of TBD, PBD, CBP or a variety of be prepared, or be acrylic, Tai Fulong, poly-
One of acid imide a variety of is prepared.
5. the passive electroluminescent screen body (PMOLED) of thin-film package according to claim 1, which is characterized in that described
Planarization layer and encapsulated layer are prepared by poly- hydrogen silazane class material, its derivative or poly- hydrogen silazane class material compositions
Integral structure.
6. the passive electroluminescent screen body (PMOLED) of thin-film package according to claim 5, which is characterized in that poly- hydrogen silicon
Azane class material compositions include photoinitiator.
7. a kind of preparation method of thin-film package passive electroluminescent screen body (PMOLED), includes the following steps:
S1, production coats organic photoresist layer on electrically-conductive backing plate, and exposure development forms it into pixel limit having an open structure
Given layer (108)；
S2, insulated column (105) are prepared by the technique of gluing, exposure, development, etching in the top of pixel confining layer, using steaming
Plating mask plate deposits organic function layer (103) in pixel confining layer having an open structure, in the upper of organic function layer (103)
Side's deposition the second electrode lay (104), the insulated column (105) keep the adjacent the second electrode lay (104) insulated from each other；
S3, production organic material or the planarization layer (106) of inorganic material above the second electrode lay (104) are described flat
Smoothization layer (106) is filled between the insulated column, and the planarization layer (106) is filled between insulated column (105) and covers
After the insulated column (105), the upper end forms continuous level structure；
S4, formed in the continuous level superstructure by chemical vapor deposition (CVD) or magnetron sputtering or vacuum evaporation it is thin
Film encapsulated layer (107).
8. a kind of preparation method of thin-film package passive electroluminescent screen body (PMOLED), includes the following steps:
S1, production coats organic photoresist layer on electrically-conductive backing plate, and exposure development forms it into pixel limit having an open structure
Given layer (108)；
S2, insulated column (105) are prepared by the technique of gluing, exposure, development, etching in the top of pixel confining layer, using steaming
Plating mask plate deposits organic function layer (103) in pixel confining layer having an open structure, in the upper of organic function layer (103)
Side's deposition the second electrode lay (104), the insulated column (105) keep the adjacent the second electrode lay (104) insulated from each other；
S3, above the second electrode lay (104) wet coating or the poly- hydrogen silazane class material of silk-screen printing or derivatives thereof,
Or poly- hydrogen silazane class material compositions, after being filled between insulated column (105) and covering the insulated column (105), solidification is
The planarization layer (106) and thin-film encapsulation layer (107) of integral structure can be formed.
9. the preparation method of the passive electroluminescent screen body (PMOLED) of thin-film package, feature exist according to claim 8
In the poly- hydrogen silazane class material compositions in the step S3 include photoinitiator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511027773.XA CN105470284B (en) | 2015-12-31 | 2015-12-31 | A kind of OLED screen body of thin-film package and preparation method thereof |
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| CN107565040A (en) * | 2017-08-30 | 2018-01-09 | 深圳市华星光电半导体显示技术有限公司 | Oled substrate and preparation method thereof |
| CN107910292B (en) | 2017-11-14 | 2020-04-10 | 京东方科技集团股份有限公司 | Preparation method of cathode isolation retaining wall, display panel and preparation method of display panel |
| CN108288680B (en) * | 2017-12-29 | 2020-09-08 | 信利（惠州）智能显示有限公司 | Flexible AMOLED display screen packaging structure and packaging method thereof |
| CN110767690B (en) * | 2018-10-31 | 2023-09-22 | 云谷（固安）科技有限公司 | Display panel, display screen, method for manufacturing display panel and display terminal |
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| CN111755622B (en) * | 2020-06-17 | 2021-12-28 | 武汉华星光电半导体显示技术有限公司 | Display panel |
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