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CN105470177A - Wafer cleaning and drying apparatus - Google Patents

Wafer cleaning and drying apparatus Download PDF

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Publication number
CN105470177A
CN105470177A CN201610010190.4A CN201610010190A CN105470177A CN 105470177 A CN105470177 A CN 105470177A CN 201610010190 A CN201610010190 A CN 201610010190A CN 105470177 A CN105470177 A CN 105470177A
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China
Prior art keywords
wafer
fluid
spray orifice
disc
wafer cleaning
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CN201610010190.4A
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CN105470177B (en
Inventor
许振杰
王同庆
李昆
路新春
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Tsinghua University
Huahaiqingke Co Ltd
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Tianjin Hwatsing Technology Co Ltd (hwatsing Co Ltd)
Tsinghua University
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Priority to CN201610010190.4A priority Critical patent/CN105470177B/en
Publication of CN105470177A publication Critical patent/CN105470177A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本发明公开了一种晶圆清洗干燥装置,晶圆清洗干燥装置包括:转盘,晶圆适于固定在转盘上;第一流体盘,第一流体盘设置在转盘和晶圆之间;第二流体盘,第二流体盘与第一流体盘关于晶圆相对设置,其中,第一流体盘和第二流体盘的朝向晶圆的表面上均设置有适于喷射流体的多个喷孔,流体包括氮气。通过设置第一流体盘和第二流体盘,第一流体盘内的流体可以通过相应的喷孔喷射在晶圆的下表面上,第二流体盘内的流体可以通过相应的喷孔喷射在晶圆的上表面上,从而可以有效清洗晶圆。当第一流体盘和第二流体盘内喷出的流体为氮气时,可以有效干燥晶圆的上表面和下表面,而且氮气可以有效去除晶圆的上表面和下表面上的残留水痕。

The invention discloses a wafer cleaning and drying device. The wafer cleaning and drying device comprises: a turntable, on which the wafer is suitable for being fixed; a first fluid plate, the first fluid plate is arranged between the turntable and the wafer; The fluid plate, the second fluid plate and the first fluid plate are arranged opposite to the wafer, wherein, the surfaces of the first fluid plate and the second fluid plate facing the wafer are all provided with a plurality of nozzle holes suitable for injecting fluid, and the fluid Includes nitrogen. By setting the first fluid plate and the second fluid plate, the fluid in the first fluid plate can be sprayed on the lower surface of the wafer through the corresponding nozzle holes, and the fluid in the second fluid plate can be sprayed on the wafer through the corresponding nozzle holes. On the upper surface of the circle, the wafer can be cleaned effectively. When the fluid ejected from the first fluid plate and the second fluid plate is nitrogen, the upper and lower surfaces of the wafer can be effectively dried, and the nitrogen can effectively remove residual water marks on the upper and lower surfaces of the wafer.

Description

晶圆清洗干燥装置Wafer cleaning and drying equipment

技术领域technical field

本发明涉及晶圆干燥技术领域,尤其涉及一种晶圆清洗干燥装置。The invention relates to the technical field of wafer drying, in particular to a wafer cleaning and drying device.

背景技术Background technique

大规模集成电路生产过程中,晶圆需要进行多道工艺加工。许多工艺完成后,晶圆要进行清洗和干燥,才能使晶圆进入下一道工艺加工。干燥是所述加工工艺中的最后一道工序,晶圆干燥的效果直接影响产品的产率和良率。In the production process of large-scale integrated circuits, wafers need to be processed in multiple processes. After many processes are completed, the wafer must be cleaned and dried before the wafer can enter the next process. Drying is the last process in the processing technology, and the effect of wafer drying directly affects the yield and yield of products.

现有的设备中常用的一种方法,是通过干燥装置高速度旋转,对晶圆表面的残留液体进行甩干,同时辅以气体吹扫,提高干燥效率。但是干燥装置存在以下问题:1、晶圆正面不吹氮气,仅通过高速转动的离心力甩干晶圆表面液体,容易出现残留水痕;2、喷气孔布置在旋转卡盘上,与晶圆间没有相对运动,只能吹扫到布置喷气孔的区域,不能吹扫整个晶圆表面,容易出现沿晶圆径向的水痕;3、随着晶圆特征尺寸不断变小,线宽不断变窄,仅仅通过甩干和吹扫很难干燥布线沟槽内的液体;4、干燥气体进行加热吹到晶圆表面,使晶圆表面温度升高,会加速布线的氧化,影响产品性能和良率。A method commonly used in existing equipment is to dry the residual liquid on the surface of the wafer through high-speed rotation of the drying device, and at the same time, it is supplemented by gas purging to improve the drying efficiency. However, the drying device has the following problems: 1. No nitrogen is blown on the front of the wafer, and the liquid on the surface of the wafer is only dried by the centrifugal force of high-speed rotation, which is prone to residual water marks; Without relative movement, it can only be blown to the area where the jet holes are arranged, but not the entire wafer surface, and water marks along the radial direction of the wafer are prone to appear; 3. As the feature size of the wafer continues to decrease, the line width continues to change Narrow, it is difficult to dry the liquid in the wiring groove only by drying and purging; 4. The drying gas is heated and blown to the surface of the wafer, which will increase the surface temperature of the wafer, which will accelerate the oxidation of the wiring, affecting product performance and yield .

发明内容Contents of the invention

本发明旨在至少在一定程度上解决相关技术中的技术问题之一。为此,本发明提出一种可以去除晶圆上表面残留水痕的晶圆清洗干燥装置。The present invention aims to solve one of the technical problems in the related art at least to a certain extent. For this reason, the present invention proposes a wafer cleaning and drying device capable of removing residual water marks on the upper surface of the wafer.

根据本发明的晶圆清洗干燥装置,包括:转盘,所述晶圆适于固定在所述转盘上;第一流体盘,所述第一流体盘设置在所述转盘和所述晶圆之间;第二流体盘,所述第二流体盘与所述第一流体盘关于所述晶圆相对设置,其中,所述第一流体盘和所述第二流体盘的朝向所述晶圆的表面上均设置有适于喷射流体的多个喷孔,所述流体包括氮气。The wafer cleaning and drying device according to the present invention includes: a turntable, on which the wafer is adapted to be fixed; a first fluid plate, and the first fluid plate is arranged between the turntable and the wafer a second fluid plate, the second fluid plate is disposed opposite to the first fluid plate with respect to the wafer, wherein the surfaces of the first fluid plate and the second fluid plate face the wafer Each is provided with a plurality of nozzle holes suitable for injecting fluid, the fluid including nitrogen.

根据本发明的晶圆清洗干燥装置,通过设置第一流体盘和第二流体盘,第一流体盘内的流体可以通过相应的喷孔喷射在晶圆的下表面上,第二流体盘内的流体可以通过相应的喷孔喷射在晶圆的上表面上,从而可以有效清洗晶圆的上表面和下表面。当第一流体盘和第二流体盘内喷出的流体为氮气时,氮气可以有效干燥晶圆的上表面和下表面,而且氮气可以有效去除晶圆的上表面和下表面上的残留水痕,还可以提升晶圆的干燥效果和干燥效率。According to the wafer cleaning and drying device of the present invention, by setting the first fluid plate and the second fluid plate, the fluid in the first fluid plate can be sprayed on the lower surface of the wafer through the corresponding nozzle holes, and the fluid in the second fluid plate can be sprayed on the lower surface of the wafer through the corresponding nozzle holes. The fluid can be sprayed on the upper surface of the wafer through the corresponding nozzle holes, so that the upper surface and the lower surface of the wafer can be effectively cleaned. When the fluid ejected from the first fluid plate and the second fluid plate is nitrogen, nitrogen can effectively dry the upper and lower surfaces of the wafer, and nitrogen can effectively remove residual water marks on the upper and lower surfaces of the wafer , It can also improve the drying effect and drying efficiency of the wafer.

另外,根据本发明的晶圆清洗干燥装置还可以具有以下区别技术特征:In addition, the wafer cleaning and drying device according to the present invention may also have the following distinguishing technical features:

在本发明的一些示例中,所述第一流体盘和所述第二流体盘相对所述转盘固定不动。In some examples of the present invention, the first fluid plate and the second fluid plate are fixed relative to the turntable.

在本发明的一些示例中,所述第一流体盘和所述第二流体盘均包括:流体盘主体和固定轴,所述多个喷孔形成在所述流体盘主体的表面上,所述固定轴内形成由沿轴向延伸的第一通道,所述流体盘主体内形成有与所述第一通道连通的第二通道,所述第二通道与所述多个喷孔相连通。In some examples of the present invention, both the first fluid plate and the second fluid plate include: a fluid plate body and a fixed shaft, the plurality of spray holes are formed on the surface of the fluid plate body, the A first channel extending in the axial direction is formed in the fixed shaft, a second channel communicating with the first channel is formed in the fluid disk body, and the second channel communicates with the plurality of spray holes.

在本发明的一些示例中,所述转盘的中心形成有沿所述轴向贯穿所述转盘的通孔,所述第一流体盘的所述固定轴伸入所述通孔内。In some examples of the present invention, a through hole penetrating through the turntable along the axial direction is formed at the center of the turntable, and the fixed shaft of the first fluid plate protrudes into the through hole.

在本发明的一些示例中,在所述轴向上,所述第二通道沿所述流体盘主体的半径方向向所述流体盘主体的边缘方向延伸。In some examples of the present invention, in the axial direction, the second channel extends along the radial direction of the fluid plate main body to the edge direction of the fluid plate main body.

在本发明的一些示例中,所述多个喷孔包括第一喷孔,所述第一喷孔设置在所述流体盘主体的中心处且沿所述轴向延伸。In some examples of the present invention, the plurality of spray holes include a first spray hole disposed at the center of the fluid disk main body and extending along the axial direction.

在本发明的一些示例中,所述多个喷孔包括第二喷孔,多个所述第二喷孔围绕所述第一喷孔且呈环形设置,所述第二喷孔的朝向所述第二通道的一端邻近所述第一通道和所述第二通道的连通处。In some examples of the present invention, the plurality of injection holes include second injection holes, the plurality of second injection holes surround the first injection hole and are arranged in a ring shape, and the second injection holes face toward the One end of the second channel is adjacent to the junction of the first channel and the second channel.

在本发明的一些示例中,多个所述喷孔包括第三喷孔,多个所述第三喷孔呈放射状从所述流体盘主体的中心向外分布。In some examples of the present invention, the plurality of injection holes include third injection holes, and the plurality of third injection holes are radially distributed from the center of the fluid plate body to the outside.

在本发明的一些示例中,位于最外侧的所述第三喷孔从所述第二通道的外边缘倾斜延伸至所述流体盘主体的表面的外边缘。In some examples of the present invention, the third nozzle hole located on the outermost side extends obliquely from the outer edge of the second channel to the outer edge of the surface of the fluid disk main body.

在本发明的一些示例中,所述第三喷孔与所述第一喷孔之间的夹角大于所述第二喷孔与所述第一喷孔之间的夹角。In some examples of the present invention, the angle between the third injection hole and the first injection hole is greater than the angle between the second injection hole and the first injection hole.

在本发明的一些示例中,位于最外侧的所述第三喷孔的延伸线与所述晶圆的边缘相交。In some examples of the present invention, the extension line of the third injection hole located on the outermost side intersects the edge of the wafer.

在本发明的一些示例中,所述晶圆清洗干燥装置还包括:多个喷头,所述多个喷头设置在所述晶圆的外侧且所述多个喷头的出水口朝向所述晶圆的边缘。In some examples of the present invention, the wafer cleaning and drying apparatus further includes: a plurality of shower heads, the plurality of shower heads are arranged on the outside of the wafer and the water outlets of the plurality of shower heads face the edge.

在本发明的一些示例中,所述晶圆开始转动时,所述第一流体盘和所述第二流体盘的第一通道内通入去离子水;通入所述第一流体一段时间后,所述第一流体盘和所述第二流体盘的第一通道内通入IPA溶液或蒸汽;所述晶圆旋转且所述第一通道通入所述第二流体一段时间后,第一流体盘和第二流体盘的第一通道内通入氮气。In some examples of the present invention, when the wafer starts to rotate, deionized water is introduced into the first channels of the first fluid plate and the second fluid plate; , the IPA solution or steam is passed into the first channel of the first fluid plate and the second fluid plate; after the wafer is rotated and the first channel is passed into the second fluid for a period of time, the first Nitrogen gas is passed into the first channel of the fluid plate and the second fluid plate.

附图说明Description of drawings

图1是夹持有晶圆的晶圆清洗干燥装置的剖视图;1 is a cross-sectional view of a wafer cleaning and drying device holding a wafer;

图2是图1中的晶圆清洗干燥装置的转盘的示意图;Fig. 2 is a schematic diagram of the turntable of the wafer cleaning and drying device in Fig. 1;

图3图1中的晶圆清洗干燥装置的第一流体盘的剖视图;Fig. 3 is a cross-sectional view of the first fluid plate of the wafer cleaning and drying device in Fig. 1;

图4是设置有喷头的晶圆清洗干燥装置的剖视图。4 is a cross-sectional view of a wafer cleaning and drying device provided with a shower head.

附图标记:Reference signs:

晶圆清洗干燥装置100;Wafer cleaning and drying device 100;

转盘10;Turntable 10;

第一流体盘20;第二流体盘20a;first fluid plate 20; second fluid plate 20a;

流体盘主体21;第二通道21a;固定轴22;第一通道22a;通孔23;Fluid disk main body 21; second channel 21a; fixed shaft 22; first channel 22a; through hole 23;

喷孔30;第一喷孔31;第二喷孔32;第三喷孔33;喷头40;Nozzle 30; first nozzle 31; second nozzle 32; third nozzle 33; nozzle 40;

晶圆200。Wafer 200.

具体实施方式detailed description

下面详细描述本发明的实施例,所述实施例的示例在附图中示出。下面通过参考附图描述的实施例是示例性的,旨在用于解释本发明,而不能理解为对本发明的限制。Embodiments of the invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

下面参考附图详细描述根据本发明实施例的晶圆清洗干燥装置100。The wafer cleaning and drying apparatus 100 according to an embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

根据本发明实施例的晶圆清洗干燥装置100可以包括:转盘10、第一流体盘20和第二流体盘20a。晶圆200适于固定在转盘10上,转盘10上可以设置有卡爪,多个卡爪可以将晶圆200固定在转盘10上。当转盘10转动时,晶圆200可以随着转盘10转动。The wafer cleaning and drying apparatus 100 according to the embodiment of the present invention may include: a turntable 10 , a first fluid plate 20 and a second fluid plate 20a. The wafer 200 is suitable to be fixed on the turntable 10 , the turntable 10 may be provided with claws, and a plurality of claws may fix the wafer 200 on the turntable 10 . When the turntable 10 rotates, the wafer 200 may rotate along with the turntable 10 .

如图1所示,第一流体盘20设置在转盘10和晶圆200之间,第二流体盘20a与第一流体盘20关于晶圆200相对设置,其中,第一流体盘20和第二流体盘20a的朝向晶圆200的表面上均设置有适于喷射流体的多个喷孔30,流体包括氮气。可以理解的是,当晶圆清洗干燥装置100正常工作时,第一流体盘20内的流体可以通过相应的喷孔30喷射在晶圆200的下表面上,第二流体盘20a内的流体可以通过相应的喷孔30喷射在晶圆200的上表面上,从而晶圆清洗干燥装置100可以有效清洗晶圆200的上表面和下表面。当第一流体盘20和第二流体盘20a内喷出的流体为氮气时,氮气可以有效干燥晶圆200的上表面和下表面,而且氮气可以有效去除晶圆200的上表面和下表面上的残留水痕,还可以提升晶圆200的干燥效果和干燥效率。As shown in FIG. 1, the first fluid plate 20 is arranged between the turntable 10 and the wafer 200, and the second fluid plate 20a and the first fluid plate 20 are arranged opposite to the wafer 200, wherein the first fluid plate 20 and the second The surface of the fluid plate 20 a facing the wafer 200 is provided with a plurality of nozzle holes 30 suitable for injecting fluid, and the fluid includes nitrogen. It can be understood that, when the wafer cleaning and drying apparatus 100 works normally, the fluid in the first fluid plate 20 can be sprayed on the lower surface of the wafer 200 through the corresponding nozzle holes 30, and the fluid in the second fluid plate 20a can be The spraying is sprayed on the upper surface of the wafer 200 through the corresponding spray holes 30 , so that the wafer cleaning and drying apparatus 100 can effectively clean the upper surface and the lower surface of the wafer 200 . When the fluid ejected in the first fluid plate 20 and the second fluid plate 20a is nitrogen, the nitrogen can effectively dry the upper surface and the lower surface of the wafer 200, and the nitrogen can effectively remove the upper surface and the lower surface of the wafer 200. The remaining water marks can also improve the drying effect and drying efficiency of the wafer 200.

由此,根据本发明实施例的晶圆清洗干燥装置100,通过设置第一流体盘20和第二流体盘20a,第一流体盘20内的流体可以通过相应的喷孔30喷射在晶圆200的下表面上,第二流体盘20a内的流体可以通过相应的喷孔30喷射在晶圆200的上表面上,从而可以有效清洗晶圆200的上表面和下表面。当第一流体盘20和第二流体盘20a内喷出的流体为氮气时,氮气可以有效干燥晶圆200的上表面和下表面,而且氮气可以有效去除晶圆200的上表面和下表面上的残留水痕,还可以提升晶圆200的干燥效果和干燥效率。Thus, according to the wafer cleaning and drying apparatus 100 of the embodiment of the present invention, by setting the first fluid plate 20 and the second fluid plate 20a, the fluid in the first fluid plate 20 can be sprayed on the wafer 200 through the corresponding nozzle holes 30 On the lower surface of the wafer 200, the fluid in the second fluid plate 20a can be sprayed on the upper surface of the wafer 200 through the corresponding nozzle holes 30, so that the upper surface and the lower surface of the wafer 200 can be effectively cleaned. When the fluid ejected in the first fluid plate 20 and the second fluid plate 20a is nitrogen, the nitrogen can effectively dry the upper surface and the lower surface of the wafer 200, and the nitrogen can effectively remove the upper surface and the lower surface of the wafer 200. The remaining water marks can also improve the drying effect and drying efficiency of the wafer 200.

根据本发明的一个优选实施例,第一流体盘20和第二流体盘20a可以相对转盘10固定不动。由此,当晶圆200随着转盘10同步转动时,从第一流体盘20上的喷孔30喷出的流体可以喷射到转动的晶圆200的整个上表面,从第二流体盘20a上的喷孔30喷出的流体可以喷射到转动的晶圆200的整个下表面,从而可以增加第一流体盘20和第二流体盘20a的清洗和干燥晶圆200的有效面积,避免清洗死角的产生,可以保证晶圆200的洁净度。According to a preferred embodiment of the present invention, the first fluid plate 20 and the second fluid plate 20 a can be fixed relative to the turntable 10 . Thus, when the wafer 200 rotates synchronously with the turntable 10, the fluid ejected from the nozzle hole 30 on the first fluid plate 20 can be sprayed onto the entire upper surface of the rotating wafer 200, and the fluid ejected from the second fluid plate 20a The fluid ejected from the spray holes 30 can be sprayed onto the entire lower surface of the rotating wafer 200, thereby increasing the effective area of cleaning and drying the wafer 200 of the first fluid plate 20 and the second fluid plate 20a, and avoiding cleaning dead ends. produced, the cleanliness of the wafer 200 can be guaranteed.

在本发明的一些示例中,如图1和图3所示,第一流体盘20和第二流体盘20a可以均包括:流体盘主体21和固定轴22,多个喷孔30形成在流体盘主体21的表面上,固定轴22内形成由沿轴向(即图1所示的上下方向)延伸的第一通道22a,流体盘主体21内形成有与第一通道22a连通的第二通道21a,第二通道21a与多个喷孔30相连通。可以理解的是,流体可以从第一通道22a流入第二通道21a,第二通道21a通过喷孔30喷射到晶圆200的表面上。In some examples of the present invention, as shown in FIG. 1 and FIG. 3 , the first fluid plate 20 and the second fluid plate 20a may both include: a fluid plate main body 21 and a fixed shaft 22, and a plurality of nozzle holes 30 are formed in the fluid plate On the surface of the main body 21, the fixed shaft 22 is formed with a first passage 22a extending in the axial direction (that is, the up and down direction shown in FIG. 1 ), and the fluid plate main body 21 is formed with a second passage 21a communicating with the first passage 22a. , the second channel 21a communicates with a plurality of injection holes 30 . It can be understood that the fluid can flow from the first channel 22 a into the second channel 21 a, and the second channel 21 a is sprayed onto the surface of the wafer 200 through the nozzle hole 30 .

可选地,如图2所示,转盘10的中心形成有沿轴向贯穿转盘10的通孔23,第一流体盘20的固定轴22伸入通孔23内。通孔23可以便于固定轴22的穿过,从而可以增加第一流体盘20的布置便利性。优选地,通孔23的周壁与固定轴22的外周壁之间保留预定距离,从而可以进一步地便于固定轴22的布置。Optionally, as shown in FIG. 2 , a through hole 23 penetrating through the turntable 10 in the axial direction is formed in the center of the turntable 10 , and the fixed shaft 22 of the first fluid plate 20 protrudes into the through hole 23 . The through hole 23 can facilitate the passage of the fixed shaft 22 , thereby increasing the convenience of arrangement of the first fluid plate 20 . Preferably, there is a predetermined distance between the peripheral wall of the through hole 23 and the peripheral wall of the fixed shaft 22 , so that the arrangement of the fixed shaft 22 can be further facilitated.

可选地,第二通道21a沿流体盘主体21的半径方向向流体盘主体21的边缘方向延伸。由此,流体可以在第二通道21a自由扩散,第二通道21a可以为多个喷孔30充分提供流体。Optionally, the second channel 21a extends along the radial direction of the fluid plate main body 21 to the edge direction of the fluid plate main body 21 . Thus, the fluid can diffuse freely in the second channel 21a, and the second channel 21a can fully provide the fluid for the plurality of nozzle holes 30 .

多个喷孔30可以在流体盘主体21的表面上间隔开设置,下面详细介绍可选的喷孔30的类型。A plurality of spray holes 30 can be arranged at intervals on the surface of the fluid plate body 21 , and the types of optional spray holes 30 will be described in detail below.

如图3所示,多个喷孔30可以包括第一喷孔31、第二喷孔32和第三喷孔33。第一喷孔31可以设置在流体盘主体21的中心处,而且第一喷孔31沿轴向延伸。可以理解的是,从第一通道22a流向第二通道21a内的流体可以直接通过第一喷孔31喷射到晶圆200的表面上,从而可以保证流体的喷射力度,可以保证晶圆200的洁净度。可选地,第一通孔23可以与晶圆200的中心正对。As shown in FIG. 3 , the plurality of injection holes 30 may include a first injection hole 31 , a second injection hole 32 and a third injection hole 33 . The first spray hole 31 may be disposed at the center of the fluid disc body 21, and the first spray hole 31 extends in an axial direction. It can be understood that the fluid flowing from the first channel 22a to the second channel 21a can be directly sprayed onto the surface of the wafer 200 through the first nozzle hole 31, thereby ensuring the injection force of the fluid and ensuring the cleanliness of the wafer 200 Spend. Optionally, the first through hole 23 may be directly aligned with the center of the wafer 200 .

如图3所示,多个第二喷孔32围绕第一喷孔31且呈环形设置,第二喷孔32的朝向第二通道21a的一端邻近第一通道22a和第二通道21a的连通处。可以理解的是,从第二喷孔32喷出的流体倾斜向晶圆200的表面喷射,从而可以有效增加多个第二喷孔32的喷射面积,而且多个第二喷孔32还可以与第一喷孔31相配合,从而第一喷孔31的喷射范围与第二喷孔32的喷射范围相邻接,避免死角的产生。As shown in Figure 3, a plurality of second nozzle holes 32 are arranged in a ring around the first nozzle hole 31, and one end of the second nozzle hole 32 facing the second passage 21a is adjacent to the connection between the first passage 22a and the second passage 21a . It can be understood that the fluid ejected from the second nozzle holes 32 is sprayed obliquely toward the surface of the wafer 200, thereby effectively increasing the injection area of the plurality of second nozzle holes 32, and the plurality of second nozzle holes 32 can also be combined with The first spray holes 31 are matched, so that the spray range of the first spray hole 31 is adjacent to the spray range of the second spray hole 32 , so as to avoid the generation of dead angles.

如图3所示,多个第三喷孔33呈放射状从流体盘主体21的中心向外分布。多个第三喷孔33的喷射面积彼此邻接,从而可以有效避免喷射死角的产生,进而可以提升晶圆200的洁净度。优选地,位于最外侧的第三喷孔33从第二通道21a的外边缘倾斜延伸至流体盘主体21的表面的外边缘。可以理解的是,位于最外侧的第三喷孔33的喷射范围可以覆盖至流体盘主体21的外边缘,从而可以使得多个喷孔30的喷射范围可以覆盖晶圆200的整个表面,可以提升晶圆200的洁净度。As shown in FIG. 3 , a plurality of third nozzle holes 33 are radially distributed from the center of the fluid plate main body 21 to the outside. The injection areas of the plurality of third injection holes 33 are adjacent to each other, so that the generation of injection dead angle can be effectively avoided, and the cleanliness of the wafer 200 can be improved. Preferably, the outermost third spray hole 33 extends obliquely from the outer edge of the second channel 21 a to the outer edge of the surface of the fluid plate main body 21 . It can be understood that the injection range of the third nozzle hole 33 located on the outermost side can cover the outer edge of the fluid plate main body 21, so that the injection range of the plurality of nozzle holes 30 can cover the entire surface of the wafer 200, which can improve The cleanliness of the wafer 200.

进一步地,位于最外侧的第三喷孔33的延伸线与晶圆200的边缘相交。由此,可以进一步地保证位于最外侧的第三喷孔33的喷射范围可以覆盖晶圆200的外边缘。Further, the extension line of the outermost third injection hole 33 intersects the edge of the wafer 200 . Thus, it can be further ensured that the injection range of the third injection hole 33 located on the outermost side can cover the outer edge of the wafer 200 .

根据本发明的一个优选实施例,第三喷孔33与第一喷孔31之间的夹角大于第二喷孔32与第一喷孔31之间的夹角。由此,当第一喷孔31、第二喷孔32和第三喷孔33同时喷射液体时,液体可以覆盖整个晶圆200的表面。当第一喷孔31、第二喷孔32和第三喷孔33同时喷射气体(例如氮气)时,第一喷孔31向外吹晶圆200表面上的液体时,第二喷孔32和第三喷孔33可以将液体吹向晶圆200的边缘,从而可以更好地干燥晶圆200。According to a preferred embodiment of the present invention, the angle between the third injection hole 33 and the first injection hole 31 is greater than the angle between the second injection hole 32 and the first injection hole 31 . Thus, when the first spray hole 31 , the second spray hole 32 and the third spray hole 33 spray liquid simultaneously, the liquid can cover the entire surface of the wafer 200 . When the first injection hole 31, the second injection hole 32 and the third injection hole 33 inject gas (such as nitrogen) simultaneously, when the first injection hole 31 blows the liquid on the wafer 200 surface outwards, the second injection hole 32 and the third injection hole 32 The third spray hole 33 can blow the liquid toward the edge of the wafer 200 , so that the wafer 200 can be dried better.

在本发明的一些具体示例中,如图4所示,晶圆清洗干燥装置100还可以包括:多个喷头40,多个喷头40设置在晶圆200的外侧,而且多个喷头40的出水口朝向晶圆200的边缘。多个喷头40相对转盘10位置固定,多个喷头40可以向晶圆200的侧边和外边缘喷射流体,从而多个喷头40可以与流体盘主体21上的多个喷孔30相配合,进一步地可以避免死角的产生,可以提升晶圆200的洁净度。In some specific examples of the present invention, as shown in FIG. 4 , the wafer cleaning and drying apparatus 100 may further include: a plurality of shower heads 40 arranged on the outside of the wafer 200 , and the water outlets of the plurality of shower heads 40 towards the edge of the wafer 200 . The positions of the plurality of nozzles 40 are fixed relative to the turntable 10, and the plurality of nozzles 40 can inject fluid to the side and outer edge of the wafer 200, so that the plurality of nozzles 40 can cooperate with the plurality of nozzle holes 30 on the fluid plate main body 21, further The ground can avoid the generation of dead angles, and can improve the cleanliness of the wafer 200 .

其中,在对晶圆200进行清洗干燥的过程中,第一流体盘20和第二流体盘20a可以向晶圆200喷射多次流体,流体的类型可以不同,下面详细介绍一种可选的流体喷射方式。Wherein, in the process of cleaning and drying the wafer 200, the first fluid plate 20 and the second fluid plate 20a can spray fluids to the wafer 200 multiple times, and the types of fluids can be different. An optional fluid is introduced in detail below Jetting method.

当晶圆200开始转动时,第一流体盘20和第二流体盘20a的第一通道22a内通入去离子水,通入第一流体一段时间后,第一流体盘20和第二流体盘20a的第一通道22a内通入IPA(IsoPropylAlcohol-异丙醇)溶液或蒸汽,第一通道22a通入第二流体一段时间后,第一流体盘20和第二流体盘20a的第一通道22a内通入氮气。通过向晶圆200表面喷洒IPA溶液或蒸汽,可以有效降低去离子水在晶圆200表面的表面张力,在离心力、氮气吹扫以及溶解IPA蒸发的作用下,布线沟槽内的残留液体可以被有效去除,从而可以有效提升晶圆200的洁净度。When the wafer 200 starts to rotate, deionized water is introduced into the first channel 22a of the first fluid plate 20 and the second fluid plate 20a, and after passing through the first fluid for a period of time, the first fluid plate 20 and the second fluid plate Pass into IPA (IsoPropylAlcohol-isopropanol) solution or steam in the first passage 22a of 20a, after the first passage 22a passes into the second fluid for a period of time, the first passage 22a of the first fluid plate 20 and the second fluid plate 20a Introduce nitrogen gas. By spraying the IPA solution or steam on the surface of the wafer 200, the surface tension of the deionized water on the surface of the wafer 200 can be effectively reduced, and under the action of centrifugal force, nitrogen purging and the evaporation of dissolved IPA, the residual liquid in the wiring groove can be eliminated. Effective removal, so that the cleanliness of the wafer 200 can be effectively improved.

在本发明的描述中,需要理解的是,术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。In describing the present invention, it is to be understood that the terms "central", "upper", "lower", "front", "rear", "left", "right", "axial", "radial" , "Circumferential" and other indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific Orientation, construction and operation in a particular orientation, therefore should not be construed as limiting the invention.

此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include at least one of these features. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

在本发明中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接或彼此可通讯;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系,除非另有明确的限定。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。In the present invention, unless otherwise clearly specified and limited, terms such as "installation", "connection", "connection" and "fixation" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , or integrated; can be mechanically connected, can also be electrically connected or can communicate with each other; can be directly connected, can also be indirectly connected through an intermediary, can be the internal communication of two components or the interaction relationship between two components, Unless expressly defined otherwise. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention according to specific situations.

在本发明中,除非另有明确的规定和限定,第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触,或第一和第二特征通过中间媒介间接接触。而且,第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方,或仅仅表示第一特征水平高度小于第二特征。In the present invention, unless otherwise clearly specified and limited, the first feature may be in direct contact with the first feature or the first and second feature may be in direct contact with the second feature through an intermediary. touch. Moreover, "above", "above" and "above" the first feature on the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. "Below", "beneath" and "beneath" the first feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is less horizontally than the second feature.

在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the description of this specification, descriptions referring to the terms "one embodiment", "some embodiments", "example", "specific examples", or "some examples" mean that specific features described in connection with the embodiment or example , structure, material or characteristic is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the described specific features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples and features of different embodiments or examples described in this specification without conflicting with each other.

尽管上面已经示出和描述了本发明的实施例,可以理解的是,上述实施例是示例性的,不能理解为对本发明的限制,本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and those skilled in the art can make the above-mentioned The embodiments are subject to changes, modifications, substitutions and variations.

Claims (13)

1. a wafer cleaning drying device, is characterized in that, comprising:
Rotating disk, described wafer is suitable for being fixed on described rotating disk;
First-class body disc, described first-class body disc is arranged between described rotating disk and described wafer;
Second body disc, described second body disc and described first-class body disc are oppositely arranged about described wafer, wherein, described first-class body disc and described second body disc on the surface of described wafer, be provided with the multiple spray orifices being suitable for spraying fluid, described fluid comprises nitrogen.
2. wafer cleaning drying device according to claim 1, is characterized in that, described first-class body disc described rotating disk relative to described second body disc maintains static.
3. wafer cleaning drying device according to claim 1, it is characterized in that, described first-class body disc and described second body disc include: fluid disc main body and fixed axis, described multiple spray orifice is formed on the surface of described fluid disc main body, formed by the first passage extended vertically in described fixed axis, be formed with the second channel be communicated with described first passage in described fluid disc main body, described second channel is connected with described multiple spray orifice.
4. wafer cleaning drying device according to claim 3, is characterized in that, the center of described rotating disk is formed with the through hole running through described rotating disk along described axis, and the described fixed axis of described first-class body disc stretches in described through hole.
5. wafer cleaning drying device according to claim 3, is characterized in that, described second channel extends along the radial direction of described fluid disc main body to the edge direction of described fluid disc main body.
6. wafer cleaning drying device according to claim 3, is characterized in that, described multiple spray orifice comprises the first spray orifice, and described first spray orifice is arranged on the center of described fluid disc main body and axially extends along described.
7. wafer cleaning drying device according to claim 6, it is characterized in that, described multiple spray orifice comprises the second spray orifice, multiple described second spray orifice is around described first spray orifice and arrange ringwise, the contiguous described first passage in the one end towards described second channel of described second spray orifice and the connectivity part of described second channel.
8. wafer cleaning drying device according to claim 7, is characterized in that, multiple described spray orifice comprises the 3rd spray orifice, and multiple described 3rd spray orifice radially outwards distributes from the center of described fluid disc main body.
9. wafer cleaning drying device according to claim 8, is characterized in that, is positioned at outermost described 3rd spray orifice tilts to extend to the surface of described fluid disc main body outward flange from the outward flange of described second channel.
10. wafer cleaning drying device according to claim 9, is characterized in that, the angle between described 3rd spray orifice and described first spray orifice is greater than the angle between described second spray orifice and described first spray orifice.
11. wafer cleaning drying devices according to claim 9, is characterized in that, are positioned at the outermost described line stretcher of the 3rd spray orifice and the edges intersect of described wafer.
12. wafer cleaning drying devices according to claim 1, is characterized in that, also comprise: multiple shower nozzle, described multiple shower nozzle be arranged on the outside of described wafer and the delivery port of described multiple shower nozzle towards the edge of described wafer.
13. wafer cleaning drying devices according to claim 1, is characterized in that, when described wafer starts to rotate, pass into deionized water in the first passage of described first-class body disc and described second body disc;
After passing into described first fluid a period of time, in the first passage of described first-class body disc and described second body disc, pass into IPA solution or steam;
Described wafer rotates and after described first passage passes into described second fluid a period of time, pass into nitrogen in the first passage of first-class body disc and second body disc.
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CN112345785A (en) * 2020-10-23 2021-02-09 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) Wafer rotating speed detection device
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