CN105463373A - Preparation method of n type copper oxide thin film - Google Patents
Preparation method of n type copper oxide thin film Download PDFInfo
- Publication number
- CN105463373A CN105463373A CN201511027613.5A CN201511027613A CN105463373A CN 105463373 A CN105463373 A CN 105463373A CN 201511027613 A CN201511027613 A CN 201511027613A CN 105463373 A CN105463373 A CN 105463373A
- Authority
- CN
- China
- Prior art keywords
- copper oxide
- substrate
- type copper
- thin film
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 239000005751 Copper oxide Substances 0.000 title claims abstract description 59
- 229910000431 copper oxide Inorganic materials 0.000 title claims abstract description 59
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 32
- 239000011521 glass Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 238000009423 ventilation Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 238000000151 deposition Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 7
- 230000005355 Hall effect Effects 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000004549 pulsed laser deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
技术领域technical field
本发明属于半导体薄膜材料制备技术领域，具体涉及一种n型氧化铜薄膜的制备方法。The invention belongs to the technical field of semiconductor film material preparation, and in particular relates to a preparation method of an n-type copper oxide film.
背景技术Background technique
氧化铜是一种非常重要的半导体材料，由于本征缺陷铜空位的存在，绝大多数氧化铜呈p型导电。由于良好的电学和光学特性，加上低的材料成本、无毒等优点而受到越来越多的关注。一直以来氧化铜广泛应用于气敏、晶体管和光电仪器。氧化铜的带隙为1.2～1.9eV，非常适合做光伏材料，并且在理论上氧化铜p-n结太阳能电池的转换效率可以达到31％，所以在太阳能电池应用上也受到越来越多的关注。寻求能制备出n型氧化铜的方法对于氧化铜在电子和光电子器件应用方面具有非常重要的意义。Copper oxide is a very important semiconductor material. Due to the existence of intrinsic defect copper vacancies, most of copper oxide is p-type conductive. Due to good electrical and optical properties, low material cost, non-toxicity and other advantages, it has attracted more and more attention. Copper oxide has been widely used in gas sensors, transistors and optoelectronic instruments. The band gap of copper oxide is 1.2-1.9eV, which is very suitable for photovoltaic materials. In theory, the conversion efficiency of copper oxide p-n junction solar cells can reach 31%, so it has also received more and more attention in the application of solar cells. Finding a way to prepare n-type copper oxide is of great significance for the application of copper oxide in electronic and optoelectronic devices.
目前，氧化铜薄膜材料的制备方法主要有：磁控溅射、热蒸发、脉冲激光沉积(PLD)、化学浴沉积等。上述的这些方法中，虽然都能制备氧化铜薄膜材料，但还存在很多不足之处，例如：磁控溅射的沉积速率较小；热蒸发得到的薄膜对衬底的附着力小；化学浴沉积操作简单但是易引入杂质；脉冲激光沉积作为一种新型材料制备的方法，高能的激光可用于制备具有复杂成分和高熔点的薄膜，并且等离子体输送机制决定了这种技术制取的薄膜具有和靶材相近的化学成分，并且沉积速率高，但现有采用脉冲激光沉积法制备的氧化铜薄膜为p型氧化铜薄膜。At present, the preparation methods of copper oxide thin film materials mainly include: magnetron sputtering, thermal evaporation, pulsed laser deposition (PLD), chemical bath deposition, etc. In the above-mentioned methods, although copper oxide thin film materials can be prepared, there are still many shortcomings, such as: the deposition rate of magnetron sputtering is small; the film obtained by thermal evaporation has little adhesion to the substrate; chemical bath The deposition operation is simple but it is easy to introduce impurities; as a new material preparation method, pulsed laser deposition can be used to prepare films with complex components and high melting points, and the plasma transport mechanism determines that the films produced by this technology have The chemical composition is similar to the target material, and the deposition rate is high, but the existing copper oxide film prepared by pulsed laser deposition is a p-type copper oxide film.
发明内容Contents of the invention
本发明所要解决的技术问题在于克服现有氧化铜薄膜制备方法的不足，提供一种操作简单，结晶性好，纯度高、重复性好且仅需要一步即可制备得到n型氧化铜薄膜的方法。The technical problem to be solved by the present invention is to overcome the deficiencies of the existing methods for preparing copper oxide thin films, and provide a method for preparing n-type copper oxide thin films with simple operation, good crystallinity, high purity and good repeatability, and only one step is required .
解决上述技术问题所采用的技术方案是：将衬底和氧化铜靶放入激光脉冲沉积设备的沉积室内，将沉积室抽真空至2×10-4Pa以下，加热衬底至500～700℃，打开氧气通气阀，向沉积室通入氧气，调节沉积室的压强为8～12Pa，然后用KrF准分子脉冲激光轰击氧化铜靶，在衬底上沉积氧化铜薄膜，脉冲激光的频率为3～8Hz，沉积时间为1～2小时，沉积结束后，自然冷却至室温，得到n型氧化铜薄膜。The technical solution adopted to solve the above technical problems is: put the substrate and copper oxide target into the deposition chamber of the laser pulse deposition equipment, evacuate the deposition chamber to below 2×10 -4 Pa, and heat the substrate to 500-700°C , open the oxygen ventilation valve, feed oxygen into the deposition chamber, adjust the pressure of the deposition chamber to 8-12Pa, and then use the KrF excimer pulse laser to bombard the copper oxide target to deposit the copper oxide film on the substrate. The frequency of the pulse laser is 3 ～8Hz, the deposition time is 1～2 hours, after the deposition is completed, it is naturally cooled to room temperature to obtain an n-type copper oxide film.
上述的衬底与氧化铜靶的距离为4～8cm；所述的脉冲激光的能量模式为恒能模式，激光能量密度为150mJ/Plus；所述的衬底为单晶硅片、普通玻璃、石英玻璃、氧化铟锡导电玻璃、掺氟氧化锡导电玻璃中的任意一种。The distance between the above-mentioned substrate and the copper oxide target is 4-8 cm; the energy mode of the pulsed laser is a constant energy mode, and the laser energy density is 150mJ/Plus; the above-mentioned substrate is a single crystal silicon wafer, ordinary glass, Any one of quartz glass, indium tin oxide conductive glass, and fluorine-doped tin oxide conductive glass.
本发明采用脉冲激光沉积法，通过改变沉积腔室的氧气压强和衬底温度，一步法在衬底上制备n型氧化铜薄膜。本发明操作简单，n型氧化铜结晶性好、纯度高，方法可重复性好。The invention adopts the pulse laser deposition method to prepare the n-type copper oxide film on the substrate in one step by changing the oxygen pressure of the deposition chamber and the substrate temperature. The invention has the advantages of simple operation, good crystallinity and high purity of the n-type copper oxide, and good repeatability of the method.
附图说明Description of drawings
图1是实施例1制备的n型氧化铜薄膜的X射线衍射图。FIG. 1 is an X-ray diffraction pattern of the n-type copper oxide film prepared in Example 1.
图2是实施例1制备的n型氧化铜薄膜的XPS图。FIG. 2 is an XPS diagram of the n-type copper oxide film prepared in Example 1. FIG.
图3是实施例2制备的n型氧化铜薄膜的X射线衍射图。3 is an X-ray diffraction pattern of the n-type copper oxide film prepared in Example 2.
图4是实施例3制备的n型氧化铜薄膜的X射线衍射图。4 is an X-ray diffraction pattern of the n-type copper oxide film prepared in Example 3.
图5是实施例4制备的n型氧化铜薄膜的X射线衍射图。5 is an X-ray diffraction pattern of the n-type copper oxide thin film prepared in Example 4.
具体实施方式detailed description
下面结合附图和实施例对本发明进一步详细说明，但本发明的保护范围不仅限于这些实施例。The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments, but the protection scope of the present invention is not limited to these embodiments.
实施例1Example 1
将普通玻璃衬底依次在丙酮、乙醇、去离子水中超声清洗5分钟，用氮气吹干。称取2g氧化铜粉末(含量≥99.9％)，放于直径为2cm的金属模具中用压片机压靶，得到氧化铜靶。将清洗干净的普通玻璃衬底和氧化铜靶通过机械手传送至激光脉冲沉积设备的沉积室内，用机械泵和分子泵将沉积室抽真空至1×10-4Pa，调节玻璃衬底和氧化铜靶的距离为6cm，然后将玻璃衬底加热至500℃，接着打开氧气通气阀，向沉积室通入氧气，并打开质量流量计，控制氧气流量为18sccm，调节沉积室压强至8Pa。用波长为248nm的KrF准分子脉冲激光在能量密度为50mJ/Plus下进行光路调节，将光斑聚焦到氧化铜靶上，然后用波长为248nm的KrF准分子脉冲激光在能量密度为150mJ/Plus下轰击氧化铜靶，并同时旋转靶材和衬底，在玻璃衬底上沉积氧化铜薄膜，脉冲激光的频率为5Hz，能量模式为恒能模式，脉冲次数为18000次，沉积时间为2小时，沉积结束后，自然冷却至室温，得到厚度为230nm的n型氧化铜薄膜。Ordinary glass substrates were ultrasonically cleaned in acetone, ethanol, and deionized water for 5 minutes in sequence, and dried with nitrogen. Weigh 2 g of copper oxide powder (content ≥ 99.9%), put it in a metal mold with a diameter of 2 cm and press the target with a tablet press to obtain a copper oxide target. Transfer the cleaned ordinary glass substrate and copper oxide target to the deposition chamber of the laser pulse deposition equipment by a robot, and vacuum the deposition chamber to 1×10 -4 Pa with a mechanical pump and a molecular pump to adjust the glass substrate and copper oxide The target distance is 6cm, then the glass substrate is heated to 500°C, and then the oxygen vent valve is opened to feed oxygen into the deposition chamber, and the mass flow meter is turned on to control the oxygen flow rate to 18sccm, and adjust the deposition chamber pressure to 8Pa. Use a KrF excimer pulse laser with a wavelength of 248nm to adjust the optical path at an energy density of 50mJ/Plus, focus the spot on the copper oxide target, and then use a KrF excimer pulse laser with a wavelength of 248nm at an energy density of 150mJ/Plus Bombard the copper oxide target, rotate the target and the substrate at the same time, deposit the copper oxide thin film on the glass substrate, the frequency of the pulsed laser is 5Hz, the energy mode is the constant energy mode, the number of pulses is 18000 times, and the deposition time is 2 hours. After the deposition, it was naturally cooled to room temperature to obtain an n-type copper oxide film with a thickness of 230 nm.
所制备的膜采用X-射线衍射仪和X射线光电子能谱分析仪进行表征，结果见图1～2。由图1可见，所制备的氧化铜薄膜为单斜晶系结构，晶体在XYZ三个坐标轴方向上的晶胞参数分别为4.658nm、3.430nm和5.139nm；由图2可见，有振激峰，说明铜离子显示+2价，Cu2p1/2与Cu2p2/3的能量差为19.9eV，说明该薄膜的物质为氧化铜。由霍尔效应测量仪测得该氧化铜薄膜的电子浓度为8.4×1015cm-3、迁移率为1.9cm2/Vs、电阻率为4.5×102Ω·cm，且其霍尔系数为负，说明该薄膜为n型氧化铜薄膜。The prepared film was characterized by X-ray diffractometer and X-ray photoelectron energy spectrum analyzer, and the results are shown in Figures 1-2. It can be seen from Figure 1 that the prepared copper oxide film has a monoclinic crystal structure, and the unit cell parameters of the crystal in the directions of the three coordinate axes of XYZ are 4.658nm, 3.430nm and 5.139nm respectively; peak, indicating that copper ions show +2 valence, and the energy difference between Cu2p 1/2 and Cu2p 2/3 is 19.9eV, indicating that the substance of the film is copper oxide. The electron concentration of the copper oxide thin film measured by the Hall effect meter is 8.4×10 15 cm -3 , the mobility is 1.9cm 2 /Vs, the resistivity is 4.5×10 2 Ω·cm, and the Hall coefficient is Negative, indicating that the film is an n-type copper oxide film.
实施例2Example 2
本实例中，调节沉积室压强至12Pa，其他步骤与实施例1相同，得到厚度为220nm的n型氧化铜薄膜(见图3)。由霍尔效应测量仪测得该氧化铜薄膜的电子浓度为5.5×1015cm-3、迁移率为1.0cm2/Vs、电阻率为7.9×102Ω·cm，且其霍尔系数为负，说明该薄膜为n型氧化铜薄膜。In this example, the pressure of the deposition chamber was adjusted to 12 Pa, and other steps were the same as in Example 1 to obtain an n-type copper oxide film with a thickness of 220 nm (see FIG. 3 ). The electron concentration of the copper oxide thin film measured by the Hall effect meter is 5.5×10 15 cm -3 , the mobility is 1.0cm 2 /Vs, the resistivity is 7.9×10 2 Ω·cm, and the Hall coefficient is Negative, indicating that the film is an n-type copper oxide film.
实施例3Example 3
本实施例中，所用衬底为石英玻璃衬底，衬底加热温度为600℃，其他步骤与实施例1相同，得到厚度为250nm的n型氧化铜薄膜(见图4)。由霍尔效应测量仪测得该氧化铜薄膜的电子浓度为2.8×1015cm-3、迁移率为3.9cm2/Vs、电阻率为6.4×102Ω·cm，且其霍尔系数为负，说明该薄膜为n型氧化铜薄膜。In this embodiment, the substrate used is a quartz glass substrate, and the heating temperature of the substrate is 600° C. The other steps are the same as in Embodiment 1 to obtain an n-type copper oxide film with a thickness of 250 nm (see FIG. 4 ). The electron concentration of the copper oxide thin film measured by the Hall effect meter is 2.8×10 15 cm -3 , the mobility is 3.9cm 2 /Vs, the resistivity is 6.4×10 2 Ω·cm, and the Hall coefficient is Negative, indicating that the film is an n-type copper oxide film.
实施例4Example 4
本实施例中，所用衬底为石英玻璃衬底，衬底加热温度为700℃，其他步骤与实施例1相同，得到厚度为275nm的n型氧化铜薄膜(见图5)。由霍尔效应测量仪测得该氧化铜薄膜的电子浓度为1.4×1015cm-3、迁移率为2.0cm2/Vs、电阻率为2.4×102Ω·cm，且其霍尔系数为负，说明该薄膜为n型氧化铜薄膜。In this embodiment, the substrate used is a quartz glass substrate, and the heating temperature of the substrate is 700° C. The other steps are the same as in Embodiment 1 to obtain an n-type copper oxide film with a thickness of 275 nm (see FIG. 5 ). The electron concentration of the copper oxide thin film measured by the Hall effect meter is 1.4×10 15 cm -3 , the mobility is 2.0cm 2 /Vs, the resistivity is 2.4×10 2 Ω·cm, and the Hall coefficient is Negative, indicating that the film is an n-type copper oxide film.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511027613.5A CN105463373B (en) | 2015-12-31 | 2015-12-31 | A kind of preparation method of n-type CuO film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511027613.5A CN105463373B (en) | 2015-12-31 | 2015-12-31 | A kind of preparation method of n-type CuO film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105463373A true CN105463373A (en) | 2016-04-06 |
| CN105463373B CN105463373B (en) | 2017-10-20 |
Family
ID=55601526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511027613.5A Expired - Fee Related CN105463373B (en) | 2015-12-31 | 2015-12-31 | A kind of preparation method of n-type CuO film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105463373B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107988629A (en) * | 2017-11-30 | 2018-05-04 | 山东大学 | A kind of preparation method of low resistivity p-type cuprous oxide epitaxial film |
| CN119233549A (en) * | 2024-10-10 | 2024-12-31 | 江西五阳新材料有限公司 | DBC ceramic copper-clad plate and preparation process thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE369082B (en) * | 1970-05-20 | 1974-08-05 | Triplex Safety Glass Co | |
| JPH07165492A (en) * | 1993-12-14 | 1995-06-27 | Mitsubishi Chem Corp | Method of manufacturing ferroelectric thin film |
| US6074768A (en) * | 1994-03-25 | 2000-06-13 | Kyocera Corporation | Process for forming the oxide superconductor thin film and laminate of the oxide superconductor thin films |
| JP2002068779A (en) * | 2000-08-31 | 2002-03-08 | Asahi Glass Co Ltd | Method for producing optically amplified glass thin film |
| CN101660128A (en) * | 2009-09-27 | 2010-03-03 | 南京大学 | Gate dielectric material cubical phase HfO2 film and preparation method thereof |
| CN101864556A (en) * | 2010-05-14 | 2010-10-20 | 南京大学 | A kind of high dielectric constant titanium aluminum oxide thin film and preparation method and application thereof |
| CN102418070A (en) * | 2011-09-22 | 2012-04-18 | 上海大学 | Preparation method of tin dioxide gas-sensitive fractal material |
| CN101851741B (en) * | 2009-04-03 | 2012-06-27 | 复旦大学 | Method for preparing metal oxide thin film without transition layer on silicon substrate |
| US20140030449A1 (en) * | 2012-07-26 | 2014-01-30 | Applied Materials, Inc. | Electrochemical device fabrication process with low temperature anneal |
-
2015
- 2015-12-31 CN CN201511027613.5A patent/CN105463373B/en not_active Expired - Fee Related
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE369082B (en) * | 1970-05-20 | 1974-08-05 | Triplex Safety Glass Co | |
| JPH07165492A (en) * | 1993-12-14 | 1995-06-27 | Mitsubishi Chem Corp | Method of manufacturing ferroelectric thin film |
| US6074768A (en) * | 1994-03-25 | 2000-06-13 | Kyocera Corporation | Process for forming the oxide superconductor thin film and laminate of the oxide superconductor thin films |
| JP2002068779A (en) * | 2000-08-31 | 2002-03-08 | Asahi Glass Co Ltd | Method for producing optically amplified glass thin film |
| CN101851741B (en) * | 2009-04-03 | 2012-06-27 | 复旦大学 | Method for preparing metal oxide thin film without transition layer on silicon substrate |
| CN101660128A (en) * | 2009-09-27 | 2010-03-03 | 南京大学 | Gate dielectric material cubical phase HfO2 film and preparation method thereof |
| CN101864556A (en) * | 2010-05-14 | 2010-10-20 | 南京大学 | A kind of high dielectric constant titanium aluminum oxide thin film and preparation method and application thereof |
| CN102418070A (en) * | 2011-09-22 | 2012-04-18 | 上海大学 | Preparation method of tin dioxide gas-sensitive fractal material |
| US20140030449A1 (en) * | 2012-07-26 | 2014-01-30 | Applied Materials, Inc. | Electrochemical device fabrication process with low temperature anneal |
| WO2014018855A1 (en) * | 2012-07-26 | 2014-01-30 | Applied Materials, Inc. | Electrochemical device fabrication process with low temperature anneal |
| TW201404902A (en) * | 2012-07-26 | 2014-02-01 | Applied Materials Inc | Electrochemical device fabrication process with low temperature anneal |
| JP2015529748A (en) * | 2012-07-26 | 2015-10-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Electrochemical device manufacturing process using low temperature annealing |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107988629A (en) * | 2017-11-30 | 2018-05-04 | 山东大学 | A kind of preparation method of low resistivity p-type cuprous oxide epitaxial film |
| CN119233549A (en) * | 2024-10-10 | 2024-12-31 | 江西五阳新材料有限公司 | DBC ceramic copper-clad plate and preparation process thereof |
| CN119233549B (en) * | 2024-10-10 | 2025-05-30 | 江西五阳新材料有限公司 | DBC ceramic copper-clad plate and preparation process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105463373B (en) | 2017-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103021805B (en) | Sputtering and vaporization function is used to form the method and system of sulfur family compound semiconductor material | |
| CN102646759A (en) | A kind of preparation method of transparent conductive oxide thin film | |
| CN101740358A (en) | Method for preparing P type poly-silicon thin film on glass substrate | |
| CN105777800B (en) | The method that lead oxide film prepares organic perovskite methylamino lead iodide films | |
| CN105244416A (en) | Low-temperature deposition process of copper-antimony-selenium solar cell light absorption layer film | |
| CN105951045A (en) | Cubic-structured MgZnO film and preparation method thereof, ultraviolet detector and preparation method thereof | |
| CN104934490B (en) | A kind of method that large area in situ synthesizes stannous oxide semiconductor optoelectronic thin-film material | |
| CN103400895B (en) | A kind of preparation method of copper-zinc-tin-sulfur solar battery obsorbing layer film | |
| CN105463373B (en) | A kind of preparation method of n-type CuO film | |
| CN100432284C (en) | Production of tin-doped indium oxide ITO thin film by electronic beam evaporation | |
| CN103985783B (en) | Utilize the method that magnetron sputtering method prepares copper-zinc-tin-sulfur film on flexible substrates | |
| CN105779939B (en) | A kind of low-resistivity, high carrier concentration p-type CuO film preparation method | |
| CN103938156B (en) | A kind of bismuth ferrite thin film of europium doping and its preparation method and application | |
| CN102751178B (en) | Method for preparing thin-film solar cell p-n junction | |
| CN101413102A (en) | Method for preparing NiO transparent conductive film by two steps | |
| CN102544213B (en) | The method manufacturing cadmium sulfide layer | |
| CN102021519A (en) | Preparation method of stannous oxide polycrystalline film | |
| CN107419235A (en) | Zinc oxide micron/nano line chemical gas-phase deposition process for preparing under a kind of low temperature | |
| CN105428212A (en) | Method for preparing copper-zinc-tin-selenide thin film absorber layer by single target sputtering | |
| CN112071941B (en) | Functional module and preparation method and application thereof | |
| CN105621487B (en) | A kind of preparation method of Molybdenum Oxide Thin Films by Sol-Gel and the photoelectric device of preparation | |
| CN103147061B (en) | Method for preparing amorphous transparent zinc oxide film | |
| CN106637204A (en) | Depositing method for Ag/ZnO/Mg photoelectric transparent conducting thin film | |
| CN102163630A (en) | Ternary compound solar cell film and preparation method thereof | |
| US20200312659A1 (en) | Method for the preparation of gallium oxide/copper gallium oxide heterojunction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171020 Termination date: 20201231 |