CN105448768B - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN105448768B CN105448768B CN201410277390.7A CN201410277390A CN105448768B CN 105448768 B CN105448768 B CN 105448768B CN 201410277390 A CN201410277390 A CN 201410277390A CN 105448768 B CN105448768 B CN 105448768B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000009826 distribution Methods 0.000 claims abstract description 22
- 239000010453 quartz Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 32
- 230000008569 process Effects 0.000 claims description 20
- 238000009413 insulation Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 7
- 150000002736 metal compounds Chemical class 0.000 claims description 6
- 229910010037 TiAlN Inorganic materials 0.000 claims description 5
- 239000004575 stone Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 238000000227 grinding Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004836 empirical method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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Abstract
Semiconductor processing equipment provided by the invention, it includes reaction chamber and the heating device that is provided at its inner portion, the heating device includes heating lamp group, the quartz cover above the heating lamp group, at least one heat insulating member and control unit, wherein, the quantity for heating lamp group is at least two groups, and the different zones for corresponding to workpiece to be machined are intervally arranged；The heat that at least one heat insulating member is used to that each group heating lamp group to be made to generate is mutually isolated；Control unit is used for when carrying out technique, according to the corresponding relationship of the temperature and sheet resistance of the distribution of the sheet resistance for the workpiece to be machined different zones being obtained ahead of time and workpiece to be machined different zones, adjust the power being applied in each group heating lamp group, to adjust the film resistor Distribution value of workpiece to be machined different zones, semiconductor processing equipment provided by the invention, it can improve sheet resistance uniformity under the premise of not influencing film gauge uniformity.
Description
Technical field
The present invention relates to semiconductor processing technology fields, and in particular, to a kind of semiconductor processing equipment.
Background technique
Physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) technology is in semi-conductor industry using most wide
General a kind of film fabrication techniques.Physical gas phase deposition technology can be applied in many technology fields, such as copper interconnecting line technology, envelope
Silicon perforation (Through Silicon Via, TSV) in dress field etc..
As semiconductor technology continues to develop, the size of integrated circuit is smaller and smaller, and Low-k (low-k) material is made
It is appeared in interconnection process for inter-level dielectric.In the technique of etching Low-k material, in order to protect Low-k material, to obtain more
Good etch topography, usually in Low-k deposited on materials metal compound film (such as TiAlN thin film), as etching Low-k material
The metal hard mask of material.Currently, the depositing operation of metal compound film has become in 32nm node copper wiring technique below
An indispensable process flow.
The depositing operation of metal compound film needs the parameter paid close attention to mainly to have: the thickness uniformity, the resistance value of film
Uniformity and stress.Wherein, different from deposited metal (non-compound), in depositing metallic compounds, the thickness and electricity of film
The product of resistance value is not a constant, in other words, keeps the thickness of film each region identical, and resistance value is also not necessarily the same,
This is because the deposition of metal is direct sputtering (being only passed through the sputter gas such as Ar into PVD chamber), and the deposition of TiAlN thin film is then
It is that reactive sputtering (other than being passed through the sputter gas such as Ar into PVD chamber, while being also passed through O2Or N2Deng reaction gas),
In reactive sputtering process, the component ratio of Ti and N in the distribution of substrate surface each region and uneven, and Ti and N at
Point ratio has a certain impact to the resistance value tool of film, lower so as to cause homogeneity of electrical resistance, and then (such as to postchannel process
Wet-cleaning (wet clean), CMP grinding) uniformity bring adverse effect.It as depicted in figs. 1 and 2, is the resistance of film
It is worth the relational graph with wet-cleaning rate and CMP grinding rate respectively.Wherein, abscissa indicates on substrate from center to edge
13 sample points；Left ordinate scale indicates resistance value (Rs) in Fig. 1, and right ordinate scale indicates wet-cleaning rate (WER)；Fig. 2
Middle ordinate indicates CMP grinding rate.As shown in Figure 1, if the resistance value of 13 sample points has differences, wet-cleaning rate
Also it changes therewith, to show that homogeneity of electrical resistance has a certain impact to wet-cleaning uniformity tool.As shown in Figure 2,
CMP grinding rate is uniform when the obvious specific resistance value uniformity of CMP grinding rate is 3% when homogeneity of electrical resistance is 2.4%, thus
Show that homogeneity of electrical resistance is smaller, then CMP grinding rate is more uniform.
Fig. 3 is a kind of existing PVD equipment.As shown in figure 3, PVD equipment includes reaction chamber 100, in reaction chamber 100
Top be provided with target 102, target 102 is electrically connected with DC power supply or radio-frequency power supply (not shown)；Also, it is reacting
In chamber 100, and the lower section for being located at target 102 is provided with pedestal 101, and carrying workpiece to be machined 103, and heating is added
Work workpiece 103, with temperature needed for reaching technique.Moreover, it is additionally provided with exhaust outlet 104 in the bottom of reaction chamber 100,
Exhaust system (not shown) vacuumizes reaction chamber 100 via exhaust outlet 104.For example, in depositing TiN thin film
In the process, Ar and N are passed through simultaneously into reaction chamber 1002, and radio-frequency power supply is opened, the N being ionized at this time and Ti target occur
Reaction forms TiN, then is sputtered out and be deposited on the surface of workpiece to be machined 103, to obtain TiAlN thin film.
In order to improve the homogeneity of electrical resistance of metal compound film, generallys use and adjust between pedestal 101 and target 102
Vertical spacing (spacing), chamber pressure and Baking (baking) etc. mode.But due to pedestal 101 and target
Vertical spacing between 102 respectively has an impact to the homogeneity of electrical resistance of film and the thickness uniformity, that is to say, that this is vertical
Spacing has corresponding relationship with the homogeneity of electrical resistance of film and the thickness uniformity respectively, it may be assumed that the vertical spacing is bigger, resistance value
Uniformity is better, and the thickness uniformity is then poorer；Opposite, the vertical spacing is smaller, and homogeneity of electrical resistance is poorer, and thickness is equal
Even property is then better.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, proposes a kind of semiconductor machining and set
It is standby, sheet resistance uniformity can be improved under the premise of not influencing film gauge uniformity, so as to road work after improving
The uniformity of skill.
A kind of semiconductor processing equipment is provided to achieve the purpose of the present invention, including reaction chamber and is provided at its inner portion
Heating device, the heating device include heat lamp group and positioned at it is described heating lamp group above quartz cover, the quartz cover
For carrying workpiece to be machined；The heating lamp group, which is used to radiate to the workpiece to be machined through the quartz cover, to be added
The quantity of heat, the heating lamp group is at least two groups, and the different zones for corresponding to the workpiece to be machined are intervally arranged；And
The heating device further includes at least one heat insulating member, and the heat generate each group heating lamp group is mutually isolated；It is described
Heating device further includes control unit, and described control unit is used for when carrying out technique, described processed according to what is be obtained ahead of time
The distribution of the sheet resistance of workpiece different zones and the temperature of workpiece to be machined different zones are corresponding with sheet resistance
Relationship adjusts the power being applied in each group heating lamp group, to adjust the film resistor of the workpiece to be machined different zones
Distribution value.
Preferably, the acquisition pattern of the film resistor Distribution value of the workpiece to be machined different zones are as follows: carry out a work
Skill, and the power being applied in each group heating lamp group is adjusted using described control unit in technical process, so as to be processed work
The temperature of part different zones is identical；After this process is completed, the film of the workpiece to be machined different zones is obtained by detection
The distribution of resistance value.
Preferably, every group of heating lamp group uses ring structure, and at least two groups heating lamp group is looped around respectively and institute
It states at the circumference of workpiece to be machined different radii at corresponding position.
Preferably, the heat insulating member is heat insulation loop, and the heat insulation loop is looped around between two groups of adjacent heating lamp groups, is used
So that the two is mutually isolated.
Preferably, every group of heating lamp group includes multiple light bulbs, and being provided at circumferentially spaced along the workpiece to be machined.
Preferably, every group of heating lamp group include one or more along the workpiece to be machined circumferentially around circular lamp
Pipe, and the more annular lamp tubes are mutually nested.
Preferably, circumferentially-spaced arrangement of at least two groups heating lamp group along the workpiece to be machined.
Preferably, the heat insulating member is thermal insulation board, and the thermal insulation board is arranged radially along the workpiece to be machined, and position
Between two groups of adjacent heating lamps, to keep the two mutually isolated.
Preferably, every group of heating lamp group includes at least one light bulb or fluorescent tube.
Preferably, the semiconductor processing equipment is Pvd equipment, and for carrying out TiN to workpiece to be machined
The depositing operation of film.
The invention has the following advantages:
Semiconductor processing equipment provided by the invention, heating device are added by corresponding at least one set of heating lamp group
The different zones of work workpiece are intervally arranged, and mutually isolated by the heat that heat insulating member generates each group heating lamp group, can be with
It realizes and partition heating is carried out to workpiece to be machined.Moreover, being added by control unit when carrying out technique according to what is be obtained ahead of time
Pair of the distribution of the sheet resistance of work workpiece different zones and the temperature of workpiece to be machined different zones and sheet resistance
It should be related to, realize that on-line control is applied to the power in each group heating lamp group in technical process, and then adjustable processed
The film resistor Distribution value of workpiece different zones, so as to improve sheet resistance uniformity, and then can be improved postchannel process
Uniformity.Further, since the temperature of workpiece to be machined only has corresponding relationship between sheet resistance, thus it is right based on this
The adjustment process that should be related to will not influence film thickness, thereby may be ensured that film gauge uniformity is unaffected.
Detailed description of the invention
Fig. 1 is the resistance value of film and the relational graph of wet-cleaning rate；
Fig. 2 is the resistance value of film and the relational graph of CMP grinding rate；
Fig. 3 is a kind of existing PVD equipment；
Fig. 4 is the cross-sectional view for the semiconductor processing equipment that first embodiment of the invention provides；
Fig. 5 A is the cross-sectional view of the heating device for the semiconductor processing equipment that first embodiment of the invention provides；
Fig. 5 B is the cross-sectional view of the line A-A along Fig. 5 A；
Fig. 5 C is the corresponding relationship of sheet resistance and temperature；
Fig. 5 D is the distribution map for the sheet resistance that heating device obtains under two kinds of temperature settings；
Fig. 5 E is the vertical view of the heating device for the semiconductor processing equipment that a modification of first embodiment of the invention provides
Figure；
Fig. 6 A is a kind of top view of the heating device for the semiconductor processing equipment that second embodiment of the invention provides；And
Fig. 6 B is the top view of another heating device for the semiconductor processing equipment that second embodiment of the invention provides.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The semiconductor processing equipment of offer is described in detail.
First embodiment
Fig. 4 is the cross-sectional view for the semiconductor processing equipment that first embodiment of the invention provides.Referring to Fig. 4, the present invention is real
The semiconductor processing equipment for applying example offer, is Pvd equipment, specifically includes reaction chamber 200 and sets within it
The heating device 201 in portion.Wherein, the top of reaction chamber 200 is provided with target 202, target 202 and DC power supply or radio frequency
The electrical connection of power supply (not shown).Preferably, above-mentioned Pvd equipment can be applied to carry out TiN to workpiece to be machined
The depositing operation of film, target 202 is Ti target at this time, specifically, is passed through Ar and N simultaneously into reaction chamber 2002, and open
Power supply is opened, the N being ionized at this time and Ti target react to form TiN, then are sputtered out and are deposited on to be placed in and heat dress
The workpiece to be machined surface on 201 is set, to obtain TiAlN thin film.
Heating device 201 is described in detail below.Specifically, Fig. 5 A is the heating that first embodiment of the invention provides
The cross-sectional view of device.Fig. 5 B is the cross-sectional view of the line A-A along Fig. 5 A.Also referring to Fig. 5 A and Fig. 5 B, heating device 201 includes
It heats lamp group, the quartz cover 2 above the heating lamp group, at least one heat insulating member and heats lamp group, stone for carrying
The promotion pedestal 1 of English lid 2 and heat insulating member.Wherein, quartz cover 2 is for carrying workpiece to be machined 3；Lamp group is heated to be used to penetrate stone
English lid 2 carries out radiant heating to workpiece to be machined 3；The quantity for heating lamp group is at least two groups, and corresponds to workpiece to be machined 3
Different zones are intervally arranged；The heat that heat insulating member is used to that each group heating lamp group to be made to generate is mutually isolated.
In the present embodiment, as shown in Figure 5 B, the quantity for heating lamp group is two groups, that is, two groups of heating lamp groups (41,42),
And every group of heating lamp group uses ring structure, the annular-heating lamp group is by being provided at circumferentially spaced multiple lamps along workpiece to be machined 3
Bubble composition；Also, two groups of heating lamp groups (41,42) are looped around corresponding at the circumference of 3 different radii of workpiece to be machined respectively
Position at, wherein heating lamp group 41 correspond to workpiece to be machined 3 fringe region；It heats lamp group 42 and corresponds to processed work
The central area of part 3.In addition, heat insulating member be heat insulation loop 51, the heat insulation loop 51 be looped around two groups of heating lamp groups (41,42) it
Between, to keep the two mutually isolated.It is so-called mutually isolated, refer to two adjacent groups heating lamp group respectively to respectively corresponding quilt
When some region of workpieces processing 3 carries out radiant heating, heat that the two gives off because by heat insulating member blocked without
It influences each other, that is, utilize heat insulation loop 51, the heat that every group of heating lamp group can be made to give off will not be irradiated to workpiece to be machined
Other regions, so as to realize that every group of heating lamp group can individually adjust corresponding 3 some region of workpiece to be machined
Temperature.
It is film as shown in Figure 5 C since the temperature of workpiece to be machined only has corresponding relationship between sheet resistance
The corresponding relationship of resistance value and temperature.The temperature of abscissa expression workpiece to be machined；Ordinate indicates sheet resistance (Rs).
As seen from the figure, the temperature of workpiece to be machined is higher, and sheet resistance is smaller；Conversely, the temperature of workpiece to be machined is lower, thin-film electro
Resistance value is bigger.
Based on the above principles, in the present embodiment, heating device 201 further includes control unit (not shown), the control
Unit processed is used for when carrying out technique, according to the distribution of the sheet resistance for the workpiece to be machined different zones being obtained ahead of time and
The temperature of workpiece to be machined different zones and the corresponding relationship of sheet resistance adjust the function being applied in each group heating lamp group
To adjust the film resistor Distribution value of workpiece to be machined different zones, and then sheet resistance uniformity can be improved in rate, improves
The uniformity of postchannel process.Moreover, because the temperature of workpiece to be machined only has corresponding relationship between sheet resistance, thus
It will not influence film thickness during adjusting the sheet resistance of workpiece to be machined different zones, thereby may be ensured that film
The thickness uniformity is unaffected.
Fig. 5 D is the distribution map for the sheet resistance that heating device provided in this embodiment obtains under two kinds of temperature settings.
As shown in Figure 5 D, abscissa indicates the radial position of workpiece to be machined, wherein the abscissa at workpiece to be machined center is 0, is added
The abscissa of the work edge of work is respectively -147 and+147；Ordinate indicates sheet resistance.Being arranged 1 is the defeated of heating lamp group 42
Power accounts for 30% out, and the output power for heating lamp group 41 accounts for 70%；Be arranged 1 be heat lamp group 42 output power account for 70%,
And the output power for heating lamp group 41 accounts for 30%.It as seen from the figure, can be with by carrying out two kinds of entirely different temperature settings
Obtain antipodal two sheet resistance curves.In practical applications, if the central area and marginal zone of workpiece to be machined
The sheet resistance in domain has differences, for example, if the sheet resistance of central area is higher than the sheet resistance of fringe region,
Control unit can be applied to each group heating lamp group with reference to above-mentioned setting 2 adjusting during semiconductor equipment carries out technique
On power, that is, by reduce be applied to central area heating lamp group power reduction workpiece to be machined central area temperature
Degree, while the power by increasing the heating lamp group for being applied to fringe region improves the temperature of fringe region；If central area
Sheet resistance is lower than the sheet resistance of fringe region, then control unit can be in the process of semiconductor equipment progress technique
In, the power being applied in each group heating lamp group is adjusted with reference to above-mentioned setting 1, that is, improve the temperature of workpiece to be machined central area
Degree, while reducing the temperature of fringe region.
Preferably, the distribution of the sheet resistance of workpiece to be machined different zones can obtain in the following ways: first
One-time process is carried out, and adjusts the power being applied in each group heating lamp group using control unit in technical process, so that by
The temperature of workpieces processing different zones is identical；After this process is completed, a workpiece to be machined sample is obtained；Then, pass through
Detection obtains the distribution of the sheet resistance of the workpiece to be machined sample different zones.It is readily appreciated that, which is to carry out just
The pre- technique carried out before normal technique, the distribution of the sheet resistance of workpiece to be machined different zones can be obtained ahead of time.
Certainly, in practical applications, workpiece to be machined different zones can also be obtained ahead of time using the other methods such as empirical method
Sheet resistance distribution.
In the present embodiment, pedestal 1 is promoted other than having the function of that lamp group and quartz cover 2 are heated in carrying, it can be with
So that quartz cover 2 is risen to process station by making lifting linear motion or drop to loading position.So-called process station is
Refer to that the upper surface position of quartz cover 2, workpiece to be machined 3 is placed in the upper of quartz cover 2 when carrying out technique to workpiece to be machined 3
On surface.So-called loading position, when referring to that the transmitting devices such as manipulator take out workpiece to be machined 3 from quartz cover 2, quartz cover 2
Upper surface position.Preferably, pedestal 1 can be promoted using the driving of hoisting mechanism 6 make lifting linear motion.
Preferably, on the upper surface for promoting pedestal 1, and its edge is provided with annular support member, to support
Quartz cover 2, and multiple air bleed slots 11 are arranged at intervals on the top of the annular support member, to prevent annular support member and stone
The air pressure for the inner space that English lid 2 is formed and temperature are excessively high.
As a variant embodiment of the present embodiment, in every group of heating lamp group, replace forming using annular lamp tube
Multiple light bulbs of annular.Specifically, as shown in fig. 5e, every group of heating lamp group include one along workpiece to be machined circumferentially around
Annular lamp tube, wherein annular lamp tube 43 corresponds to the fringe region of workpiece to be machined；Annular lamp tube 44 corresponds to workpiece to be machined
Central area.
In practical applications, two or more annular lamp tubes, and more circular lamps can also be set in every group of heating lamp group
It manages mutually nested.
It should be noted that in the present embodiment, the quantity for heating lamp group is two groups, but the invention is not limited to
This, in practical applications, the quantity for heating lamp group can be three groups or more, and be arranged between each adjacent two heating lamp group
One heat insulation loop.
It should also be noted that, in the above-described embodiments, every group of heating lamp group is by multiple light bulbs or at least one annular
Light tube group circularizes structure, but the present invention is not limited thereto, and in practical applications, every group of heating lamp group can also be by other
The heating lamp of arbitrary shape forms, as long as it can form ring structure, to realize each group heating lamp group to workpiece to be machined difference
The circumferential area of radius carries out radiant heating.
Second embodiment
Heating device provided in this embodiment is compared with above-mentioned first embodiment, and difference is only that: the subregion of heating is not
Together, and to the structure of heat insulating member it is adaptively adjusted.
Specifically, Fig. 6 A is a kind of vertical view of the heating device for the semiconductor processing equipment that second embodiment of the invention provides
Figure.As shown in Figure 6A, in the present embodiment, the quantity for heating lamp group is six groups, and along the circumferentially-spaced arrangement of workpiece to be machined；
Every group of heating lamp group includes two light bulbs 45.Heat insulating member is thermal insulation board 52, which sets along the radial direction of workpiece to be machined
It sets, and between two groups of adjacent heating lamp groups, the heat generate the two is mutually isolated.It is readily appreciated that, first is real
The technical solution for applying example is radial subregion along workpiece to be machined 3, and the technical solution of second embodiment is along workpiece to be machined 3
Circumferencial direction subregion.In addition, the structure and function and above-mentioned first of quartz cover 2 and promotion pedestal 1 in the present embodiment is in fact
It is identical to apply example, details are not described herein.
It should be noted that in the present embodiment, every group of heating lamp group is made of at least one light bulb 45, but of the invention
It is not limited thereto, it in practical applications, can also be using the heating lamp composition heating lamp group of any other structure, for example, such as
Shown in Fig. 6 B, every group of heating lamp group includes two mutually nested annular lamp tubes 46.
Also need to illustrate, in the present embodiment, the quantity for heating lamp group is six groups, but the invention is not limited to
This, in practical applications, it can be more than two for heating the quantity of lamp group, and accordingly to the quantity of thermal insulation board and heating lamp
The size and position of group make adaptability design.
Explanation is needed further exist for, the partitioned mode of heating device is not limited in above-mentioned first, second embodiment
The two ways of proposition can also select other partitioned modes in practical applications as the case may be, and should according to point
The difference of area's mode, quantity, structure and the arrangement mode of applicability design heating lamp group and heat insulating member.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (8)
1. a kind of semiconductor processing equipment forms metal compound film, including reaction chamber for depositing on workpiece to be machined
Room and the heating device being provided at its inner portion, the heating device include heating lamp group and the stone above the heating lamp group
English lid, the quartz cover is for carrying the workpiece to be machined；The heating lamp group is used for through the quartz cover to the quilt
Workpieces processing carries out radiant heating, which is characterized in that the quantity of the heating lamp group is at least two groups, and corresponds to described added
The different zones of work workpiece are intervally arranged；Wherein, every group of heating lamp group uses ring structure, and at least two groups heat lamp group
Be looped around respectively at the circumference of the workpiece to be machined different radii at corresponding position or at least two groups heat
Lamp group is processed along the circumferentially-spaced arrangement of the workpiece to be machined with realizing to adjust in metal compound film deposition process
The film resistor Distribution value of workpiece different zones；And the heating device further includes at least one heat insulating member, each to make
The heat that group heating lamp group generates is mutually isolated；
The heating device further includes control unit, and described control unit is used for when carrying out technique, according to the institute being obtained ahead of time
State the distribution of the sheet resistance of workpiece to be machined different zones and the temperature and film resistor of workpiece to be machined different zones
The corresponding relationship of value adjusts the power being applied in each group heating lamp group, to adjust the workpiece to be machined different zones
Film resistor Distribution value.
2. semiconductor processing equipment according to claim 1, which is characterized in that the workpiece to be machined different zones it is thin
The acquisition pattern of electric resistance value distribution are as follows:
One-time process is carried out, and adjusts the function being applied in each group heating lamp group using described control unit in technical process
Rate, so that the temperature of workpiece to be machined different zones is identical；
After this process is completed, the distribution of the sheet resistance of the workpiece to be machined different zones is obtained by detection.
3. semiconductor processing equipment according to claim 1, which is characterized in that the heat insulating member is heat insulation loop, described
Heat insulation loop is looped around between two groups of adjacent heating lamp groups, to keep the two mutually isolated.
4. semiconductor processing equipment according to claim 1, which is characterized in that every group of heating lamp group includes multiple light bulbs,
And being provided at circumferentially spaced along the workpiece to be machined.
5. semiconductor processing equipment according to claim 1, which is characterized in that every group of heating lamp group includes one or more
Along the workpiece to be machined circumferentially around annular lamp tube, and the more annular lamp tubes are mutually nested.
6. semiconductor processing equipment according to claim 1, which is characterized in that the heat insulating member is thermal insulation board, described
Thermal insulation board is arranged radially along the workpiece to be machined, and between two groups of adjacent heating lamps, to both make mutually every
From.
7. semiconductor processing equipment according to claim 1, which is characterized in that every group of heating lamp group includes at least one lamp
Bubble or fluorescent tube.
8. semiconductor processing equipment according to claim 1, which is characterized in that the semiconductor processing equipment is physics gas
Phase depositing device, and the depositing operation for carrying out TiAlN thin film to workpiece to be machined.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410277390.7A CN105448768B (en) | 2014-06-19 | 2014-06-19 | Semiconductor processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410277390.7A CN105448768B (en) | 2014-06-19 | 2014-06-19 | Semiconductor processing equipment |
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| CN105448768A CN105448768A (en) | 2016-03-30 |
| CN105448768B true CN105448768B (en) | 2019-10-11 |
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| CN201410277390.7A Active CN105448768B (en) | 2014-06-19 | 2014-06-19 | Semiconductor processing equipment |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107723673A (en) * | 2016-08-12 | 2018-02-23 | 北京北方华创微电子装备有限公司 | Magnetically controlled sputter method and magnetic control sputtering device |
| CN107845589A (en) * | 2017-10-27 | 2018-03-27 | 德淮半导体有限公司 | Heating pedestal and semiconductor processing equipment |
| CN111074242A (en) * | 2018-10-19 | 2020-04-28 | 长鑫存储技术有限公司 | Adjusting method of heating device, heating device and chemical vapor deposition equipment |
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