CN105419236B - A kind of epoxy molding plastic for packaging semiconductor - Google Patents
A kind of epoxy molding plastic for packaging semiconductor Download PDFInfo
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- CN105419236B CN105419236B CN201510952561.6A CN201510952561A CN105419236B CN 105419236 B CN105419236 B CN 105419236B CN 201510952561 A CN201510952561 A CN 201510952561A CN 105419236 B CN105419236 B CN 105419236B
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- 239000004593 Epoxy Substances 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000000465 moulding Methods 0.000 title claims abstract description 26
- 239000004033 plastic Substances 0.000 title claims abstract description 25
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 10
- 239000004005 microsphere Substances 0.000 claims abstract description 19
- 239000003822 epoxy resin Substances 0.000 claims abstract description 16
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 16
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 10
- 239000011256 inorganic filler Substances 0.000 claims abstract description 9
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 9
- 239000005011 phenolic resin Substances 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- -1 amino, sulfydryl Chemical group 0.000 claims description 2
- 239000011325 microbead Substances 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 238000005336 cracking Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 4
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- DCTOHCCUXLBQMS-UHFFFAOYSA-N 1-undecene Chemical compound CCCCCCCCCC=C DCTOHCCUXLBQMS-UHFFFAOYSA-N 0.000 description 1
- 150000004941 2-phenylimidazoles Chemical class 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 239000011805 ball Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- VOOLKNUJNPZAHE-UHFFFAOYSA-N formaldehyde;2-methylphenol Chemical compound O=C.CC1=CC=CC=C1O VOOLKNUJNPZAHE-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000004693 imidazolium salts Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011806 microball Substances 0.000 description 1
- 239000000206 moulding compound Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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- Chemical & Material Sciences (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of epoxy molding plastic for packaging semiconductor, including component：Epoxy resin 4.7wt 7.7wt%, phenolic resin 3.9wt 6.9wt%, curing accelerator 0.1wt 0.5wt%, inorganic filler 80.0% 86.0%, porous microsphere 0.1wt% 10wt%, wherein, the d50 particle diameters of above-mentioned porous microsphere be 1 20 μm, the aperture in porous microsphere duct be that 10 800 nm, the BET specific surface area of porous microsphere are 300 1000 m2/g.Advantages of the present invention has：Epoxy molding plastic as obtained by the present invention is as encapsulating material, when being produced applied to semiconductor devices, with mobility and the characteristics of excellent anti-weld cracking, and resulting semiconductor devices has the advantages that excellent mouldability and proper alignment are reflow.
Description
Technical field
The present invention relates to epoxy molding plastic field, more particularly to a kind of epoxy molding plastic for packaging semiconductor.
Background technology
In electronic instrument miniaturization in recent years, lightweight, the market trends of high performance, the high collection of semiconductor element
It is evolving into change, in addition, in the surface installation of semiconductor device is promoted, to semiconductor epoxy moulding compound for packaging
It is required that also more and more stricter.Along with the miniaturization of semiconductor device, slimming, to semiconductor sealing composition epoxy resin
It is required that becoming increasingly strict.The miniaturization of semiconductor devices, lightweight, integrated require that epoxy molding plastic has higher flowing
Property, stomata, defect are otherwise easily produced in encapsulation process；Semiconductor devices is installed in 260 DEG C of surface reflow temperature
During processing, the easy generation interface peel or semiconductor device of the solidfied material of semiconductor element or lead frame and epoxy molding plastic
Crack, the impaired unfavorable condition of semiconductor device reliability is considerably increased, therefore it is required that epoxy molding plastic possesses more
High proper alignment is reflow.Considered based on above-mentioned background, the latest developments direction of epoxy molding plastic is the tree using more low viscosity
Fat, coordinate more inorganic fillers to reach purpose that high fluidity, high proper alignment are reflow.It is low during shaping in order to reduce
Viscosity and keep mobility, it is known to using the method for the low epoxy resin of melt viscosity and phenolic resin, in addition, in order to improve
The use level of inorganic filler, it is known to the method being surface-treated using silane coupling agent to inorganic filler.The above method can
The soldering resistance of epoxy molding plastic is obviously improved, cracking is reduced, but has a problem in that with the increase of inorganic filler amount, mobility becomes
It is short, cause easily to produce stomata and defect in encapsulation process, meanwhile, the production of epoxy molding plastic also becomes difficult, easily goes out
Now dead material, has a strong impact on production efficiency.Therefore, only with these methods, it is impossible at the same reach high fluidity and high soldering resistance,
Resistance to cracking.
The content of the invention
It is an object of the invention to provide a kind of epoxy molding plastic for packaging semiconductor, to overcome above-mentioned existing skill
The deficiency mentioned in art.
To achieve the above object, the present invention is achieved through the following technical solutions：
A kind of epoxy molding plastic for packaging semiconductor, including component：
Epoxy resin 4.7wt-7.7wt%
Phenolic resin 3.9wt-6.9wt%
Curing accelerator 0.1wt-0.5wt%
Inorganic filler 80.0%-86.0%
Porous microsphere 0.1wt%-10wt%,
Wherein, the d50 particle diameters of above-mentioned porous microsphere be 1-20 μm, the aperture in porous microsphere duct be 10-800 nm, it is many
The BET specific surface area of hole microballoon is 300-1000 m2/g。
It is preferred that, the epoxy resin is included selected from least one of group being made up of flowing epoxy：Orthoresol
Formaldehyde epoxy resin, biphenyl type epoxy resin；The phenolic resin is included in the group being made up of following phenolic resin at least
It is a kind of：Phenol aralkyl type resin, novolac resin with biphenylene skeleton structure.
It is preferred that, the preferred o-cresol formaldehyde epoxy resin of epoxy resin, the phenolic resin preferably has biphenylene
The phenol aralkyl type resin of skeleton structure.
It is preferred that, the preferred biphenyl type epoxy resin of epoxy resin, the preferred novolac resin of phenolic resin.
It is preferred that, the porous microsphere refers to that porous silica microballoon, Woelm Alumina microballoon, poriferous titanium dioxide are micro-
One or more in ball.
It is preferred that, the porous microsphere, its duct is one kind in unordered duct, parallel channels, vertical channel, 3D ducts
Or it is a variety of.
It is preferred that, the porous microsphere refers to that channel surfaces pass through any one or more in amino, sulfydryl, epoxy radicals
The porous microsphere of base group modification.
The inorganic filler used in the present invention is not particularly limited, its can selected from ball-shaped silicon micro powder, crystallization silicon powder,
Silicon powder, aluminum oxide, aluminium hydroxide, Firebrake ZB etc. are melted, in order to reach excellent mobility, particularly preferred ball-shaped silicon micro powder.
The curing accelerator used in the present invention is not particularly limited, as long as they promote between epoxy radicals and phenolic hydroxyl group
Reaction.The example of accelerator is organophosphor such as triphenylphosphine, imidazolium compounds such as 2-methylimidazole and 2- phenylimidazoles,
Diazacyclo alkene such as 1,8- diazabicyclos（5,4,0）Hendecene -7 and its derivative, these can be with individually or jointly two
Kind or a variety of use.
In the epoxy molding plastic of the present invention, by epoxy resin, phenolic resin, inorganic filler, curing accelerator, porous micro-
Ball is as neccessary composition, in addition, can also suitably coordinate as needed the pigment such as silane coupler, wax class releasing agent, carbon black,
The fire retardants such as Firebrake ZB.
The epoxy molding plastic of the present invention fully can uniformly mix all substances by using high mixer, then pass through double roller
The melt kneading such as machine or kneader, the mixture after kneading is through cooling down, crushing, be obtained by mixing.
The epoxy molding plastic of the present invention can encapsulate various semiconductor elements to produce by methods such as die casting, compression moulding and injections
Semiconductor devices.
The beneficial effects of the present invention are：Epoxy molding plastic as obtained by the present invention as encapsulating material, applied to
Semiconductor devices produce when, with mobility and anti-weld cracking it is excellent the characteristics of, resulting semiconductor devices has
The reflow advantage of excellent mouldability and proper alignment.
Embodiment
The present invention will be described in more detail by embodiment below, but the present invention is not limited only to what is be made up of following experimental examples
Embodiment.
Epoxy resin, phenolic resin and porous microsphere that all embodiments below include, are expressed as follows：
E-1：Orthoresol type epoxy resin（102 DEG C of softening point）
E-2：Biphenyl type epoxy resin（93 DEG C of fusing point）
P-1：Phenol aralkyl type resin with biphenylene skeleton structure（63 DEG C of softening point）
P-2：Novolac resin（76 DEG C of softening point）
W-1：Porous silica microballoon（d50=5μm）
W-2：Woelm Alumina microballoon（d50=11μm）
W-3：Channel surfaces are through amido modified porous silica microballoon（d50=6μm）
W-4：Porous titania microbead（d50=15μm）
Embodiment 1
Embodiment 1 includes following component：
E-1：6.0 parts by weight
P-1：5.1 parts by weight
W-1：4.5 parts by weight
Ball-shaped silicon micro powder：83.0 parts by weight
2-methylimidazole：0.2 parts by weight
Firebrake ZB：0.4 parts by weight
Silane coupler：0.3 parts by weight
Wax class releasing agent：0.2 parts by weight
Carbon black：0.3 parts by weight
Above-mentioned substance is uniform in high-speed mixer and mixing at room temperature, then enter by double screw extruder at 80-100 DEG C
Row melting mixing, cooling, then crushes, epoxy molding plastic is obtained after mixing.Epoxy molding plastic is evaluated in following manner.Comment
Valency the results are shown in Table 1.
Spiral flow length：Tested on transfer moIding machine by EMMI-1-66 helical flows metal die, test condition
For：Temperature：175 DEG C, pressure：7.0 MPa, dwell time：120 s.Spiral flow length is the parameter of test and appraisal mobility, the value
Bigger expression mobility is better, and unit is cm.
Proper alignment is reflow：Using low pressure transfer moIding machine, make its bond the 14cm of 7cm × 7cm × 0.5cm silicons ×
The pQFP lead frames of 20cm × 2.7cm80 sizes（Copper）Shaping, condition of molding：175 DEG C of temperature, injection time：10s, during solidification
Between：90s, injection pressure：9.8 MPa.After solidifying 8 hours at 175 DEG C, the humidifying 168 hours under 85 DEG C and 85% damp condition,
Then flowed back by IR, maximum temperature is 260 DEG C, is continued through three times（Three times, carried out every time under 225 DEG C or higher temperature
10s）.Then, internal crack and delamination are detected using ultrasonic Flaw Detection device.According to 10 packaging part chips hierarchy numbers
Evaluated with internal crack number.
Embodiment 2-10 and comparing embodiment 11-13
Embodiment 2-10 and comparing embodiment 11-13 is according to the component and content included by table 1, with preparing embodiment 1
Same procedure prepare epoxy molding plastic, and carry out according to evaluation method same as Example 1 being evaluated.As a result
As shown in table 1.
Table 1
| 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | |
| E-1 | 6.0 | 6.0 | 6.0 | 6.0 | 7.7 | 4.7 | 2.9 | 0 | 0 | 6.2 | 6.0 | 8.5 | 6.2 |
| E-2 | 0 | 0 | 0 | 0 | 0 | 0 | 2.8 | 5.7 | 6.1 | 0 | 0 | 0 | 0 |
| P-1 | 5.1 | 5.1 | 5.1 | 5.1 | 6.9 | 3.9 | 5.4 | 5.4 | 0 | 0 | 5.1 | 7.1 | 0 |
| P-2 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 5.0 | 4.9 | 0 | 0 | 4.9 |
| W-1 | 4.5 | 0 | 0 | 0 | 1.0 | 7.0 | 4.5 | 4.5 | 4.5 | 0 | 0 | 0 | 0 |
| W-2 | 0 | 4.5 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| W-3 | 0 | 0 | 4.5 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| W-4 | 0 | 0 | 0 | 4.5 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| Ball-shaped silicon micro powder | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 87.5 | 83 | 87.5 |
| 2-methylimidazole | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 |
| Firebrake ZB | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 |
| Silane coupler | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 |
| Wax class releasing agent | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 |
| Carbon black | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 |
| Spiral flow length cm | 97 | 96 | 108 | 90 | 106 | 92 | 105 | 116 | 91 | 75 | 80 | 95 | 65 |
| The reflow n/10 of proper alignment | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 3 | 4 | 8 |
The epoxy molding plastic for packaging semiconductor of the present invention, the excellent properties of performance are to ensure high filling
Meanwhile, mobility is high, stress is small, and proper alignment is reflow good.When carrying out semiconductor component packing using the epoxy molding plastic, into
Shape sex expression is excellent, and the adhesiveness with lead frame is also very excellent, can obtain the excellent semiconductor device of proper alignment backflow sex expression
Part.Therefore, the epoxy molding plastic is advantageously used for semiconductor component packing.
Claims (1)
1. a kind of epoxy molding plastic for packaging semiconductor, it is characterised in that：Including component：
Epoxy resin 4.7wt-7.7wt%
Phenolic resin 3.9wt-6.9wt%
Curing accelerator 0.1wt-0.5wt%
Inorganic filler 80.0%-86.0%
Porous microsphere 0.1wt%-10wt%,
Wherein, the d50 particle diameters of above-mentioned porous microsphere be 1-20 μm, the aperture in porous microsphere duct be 10-800 nm, it is porous micro-
The BET specific surface area of ball is 300-1000 m2/g；
Wherein described porous microsphere refers in porous silica microballoon, Woelm Alumina microballoon, porous titania microbead
It is one or more；
The porous microsphere, its duct is the one or more in unordered duct, parallel channels, vertical channel, 3D ducts；
The porous microsphere refers to any one or more base group modification that channel surfaces pass through in amino, sulfydryl, epoxy radicals
Porous microsphere.
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| CN201510952561.6A CN105419236B (en) | 2015-12-18 | 2015-12-18 | A kind of epoxy molding plastic for packaging semiconductor |
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|---|---|---|---|
| CN201510952561.6A CN105419236B (en) | 2015-12-18 | 2015-12-18 | A kind of epoxy molding plastic for packaging semiconductor |
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| CN105419236B true CN105419236B (en) | 2017-11-07 |
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| WO2017122952A1 (en) * | 2016-01-13 | 2017-07-20 | 주식회사 엘지화학 | Thermosetting resin composition for semiconductor package and prepreg using same |
| TWI723211B (en) * | 2016-09-23 | 2021-04-01 | 日商住友電木股份有限公司 | Thermosetting resin composition, resin encapsulating substrate and electronic device |
| CN116884941B (en) * | 2023-06-19 | 2024-04-09 | 浙江嘉辰半导体有限公司 | Structure for packaging chip and packaging process |
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| CN1217972C (en) * | 2000-04-06 | 2005-09-07 | 日东电工株式会社 | Epoxy resin composition for semi-conductor packaging and semi-conductor device using the composition |
| JP2005089710A (en) * | 2003-09-19 | 2005-04-07 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JP2009057393A (en) * | 2007-08-08 | 2009-03-19 | Shin Etsu Chem Co Ltd | Epoxy resin composition having latent curing accelerator and semiconductor device |
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