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CN105392297A - Method for manufacturing copper foil with carrier, method for manufacturing copper-clad laminate, method for manufacturing printed wiring board and method for manufacturing electronic device, and products thereof - Google Patents

Method for manufacturing copper foil with carrier, method for manufacturing copper-clad laminate, method for manufacturing printed wiring board and method for manufacturing electronic device, and products thereof Download PDF

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Publication number
CN105392297A
CN105392297A CN201510535361.0A CN201510535361A CN105392297A CN 105392297 A CN105392297 A CN 105392297A CN 201510535361 A CN201510535361 A CN 201510535361A CN 105392297 A CN105392297 A CN 105392297A
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carrier
layer
copper foil
ultra
copper
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CN105392297B (en
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森山晃正
永浦友太
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • H05K3/025Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/384Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0147Carriers and holders
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0264Peeling insulating layer, e.g. foil, or separating mask
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0723Electroplating, e.g. finish plating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Laminated Bodies (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The invention provides a method for manufacturing copper foil with carrier. The method comprises the following heating and processing steps: a copper foil with a carrier comprises a carrier, a middle layer, a ultrathin copper layer and a surface processing layer comprising a silane coupling processing layer, the copper foil with the carrier is performed a heating process for 1 hour to 8 hours at the heating temperature of 100 DEG C to 220 DEG C, or a heating process for 1 hour to 6 hours at the heating temperature of 100 DEG C to 220 DEG C, or a heating process for 2 hour to 4 hours at the heating temperature of 160 DEG C to 220 DEG C.

Description

附载体铜箔的制法、覆铜积层板的制法、印刷配线板的制法、电子机器的制法及它们的制品Manufacturing method of copper foil with carrier, manufacturing method of copper-clad laminated board, manufacturing method of printed wiring board, manufacturing method of electronic equipment and their products

技术领域 technical field

本发明涉及一种附载体铜箔的制造方法、覆铜积层板的制造方法、印刷配线板的制造方法、及电子机器的制造方法、附载体铜箔、积层体、印刷配线板以及电子机器。 The present invention relates to a method of manufacturing copper foil with a carrier, a method of manufacturing a copper-clad laminate, a method of manufacturing a printed wiring board, a method of manufacturing an electronic device, a copper foil with a carrier, a laminate, and a printed wiring board and electronic machines.

背景技术 Background technique

印刷配线板通常经下述步骤而制造:在使绝缘基板与铜箔接着而制成覆铜积层板之后,通过蚀刻而在铜箔面形成导体图案。随着近年来电子机器的小型化、高性能化需求的增大而推展搭载零件的高密度构装化或信号的高频化,从而对印刷配线板要求有导体图案的细微化(窄间距化)或高频应对等。 A printed wiring board is usually produced through a process of forming a conductor pattern on the copper foil surface by etching after bonding an insulating substrate and copper foil to form a copper-clad laminate. In recent years, with the miniaturization of electronic equipment and the increase in the demand for high performance, the high-density packaging of mounted parts and the high frequency of signals have been promoted, and the miniaturization of conductor patterns (narrow pitch) is required for printed wiring boards. ) or high-frequency response, etc.

与窄间距化相对应,近来要求厚度在9μm以下、甚至是厚度在5μm以下的铜箔,然而,这种极薄的铜箔其机械强度低,在印刷配线板的制造时易破裂或产生皱折,因此发展出将具有厚度的金属箔用作为载体并隔着剥离层将极薄铜层电沉积在其上而成的附载体铜箔。在将极薄铜层的表面贴合于绝缘基板并进行热压接后,经由剥离层将载体剥离去除。在所露出的极薄铜层上通过抗蚀剂而形成电路图案后,利用硫酸-过氧化氢系蚀刻液来蚀刻去除极薄铜层,通过此手法(MSAP:Modified-Semi-Additive-Process)来形成细微电路。 Corresponding to the narrow pitch, copper foil with a thickness of 9 μm or less, and even a thickness of 5 μm or less has recently been required. However, such extremely thin copper foil has low mechanical strength and is prone to cracking or cracking during the manufacture of printed wiring boards. Therefore, a copper foil with a carrier is developed, which uses a thick metal foil as a carrier and deposits an extremely thin copper layer on it through a peeling layer. After bonding the surface of the ultra-thin copper layer to the insulating substrate and performing thermocompression bonding, the carrier is peeled and removed through the release layer. After forming a circuit pattern with a resist on the exposed ultra-thin copper layer, the ultra-thin copper layer is etched and removed with a sulfuric acid-hydrogen peroxide-based etchant (MSAP: Modified-Semi-Additive-Process) to form microscopic circuits.

此处,对于成为与树脂的接着面的附载体铜箔的极薄铜层的表面主要要求极薄铜层与树脂基材的剥离强度充足,且此剥离强度在高温加热、湿式处理、焊接、化学药剂处理等之后也保持为充足。提高极薄铜层与树脂基材间的剥离强度的方法,一般而言是以下述方法为代表:使大量的粗化粒子附着于表面的轮廓(凹凸、粗糙)增大后的极薄铜层上。 Here, for the surface of the ultra-thin copper layer of the copper foil with a carrier to be the bonding surface with the resin, it is mainly required that the peel strength between the ultra-thin copper layer and the resin base material is sufficient, and the peel strength is high temperature heating, wet processing, welding, Chemical agent treatment etc. are also kept sufficient afterward. The method of improving the peel strength between the ultra-thin copper layer and the resin base material is generally represented by the method of attaching a large number of roughening particles to the ultra-thin copper layer after the surface contour (concave-convex, roughness) is enlarged superior.

然而,即便是在印刷配线板中,若在具有形成特别细微的电路图案的需要的半导体封装基板使用这种轮廓(凹凸、粗糙)大的极薄铜层,则在电路蚀刻时会残留不需要的铜粒子,会产生电路图案间的绝缘不良等问题。 However, even in printed wiring boards, if such an ultra-thin copper layer with a large outline (concave-convex, roughness) is used on a semiconductor package substrate required to form a particularly fine circuit pattern, undesired copper will remain during circuit etching. Necessary copper particles cause problems such as poor insulation between circuit patterns.

因此,在WO2004/005588号(专利文献1)中尝试了使用未在极薄铜层的表面施加粗化处理的附载体铜箔作为以半导体封装基板为首的用于细微电路的附载体铜箔。由于其低轮廓(凹凸、粗糙度、粗糙)的影响,这种未施加粗化处理的极薄铜层与树脂的密合性(剥离强度)与一般的印刷配线板用铜箔相比,有降低的倾向。因此,要求对附载体铜箔作进一步的改善。 Therefore, WO2004/005588 (Patent Document 1) attempted to use a copper foil with a carrier that did not roughen the surface of the ultra-thin copper layer as a copper foil with a carrier for fine circuits including semiconductor package substrates. Due to its low profile (concave-convex, roughness, roughness), the adhesion (peel strength) of this ultra-thin copper layer without roughening treatment to resin is lower than that of general copper foil for printed wiring boards. tends to decrease. Therefore, further improvement of the copper foil with a carrier is required.

因此,在日本特开2007-007937号公报(专利文献2)及日本特开2010-006071号公报(专利文献3)中,记载有在附载体极薄铜箔的与聚酰亚胺系树脂基板接触(接着)的面,设置Ni层或/及Ni合金层、设置铬酸盐层、设置Cr层或/及Cr合金层、设置Ni层及铬酸盐层、设置Ni层及Cr层。通过设置该等表面处理层,聚酰亚胺系树脂基板与附载体极薄铜箔的密合强度可不经粗化处理或是降低粗化处理的程度(细微化)即可得到所欲的接着强度。此外,也记载有利用硅烷偶合剂来进行表面处理或施加防锈处理。 Therefore, in Japanese Patent Application Laid-Open No. 2007-007937 (Patent Document 2) and Japanese Patent Laid-Open No. 2010-006071 (Patent Document 3), it is described that an ultra-thin copper foil with a carrier and a polyimide-based resin substrate On the contacting (adhering) surface, a Ni layer or/and Ni alloy layer, a chromate layer, a Cr layer or/and Cr alloy layer, a Ni layer and a chromate layer, a Ni layer and a Cr layer are provided. By providing these surface treatment layers, the adhesion strength between the polyimide-based resin substrate and the ultra-thin copper foil with a carrier can be obtained without roughening or by reducing the degree of roughening (micronization). strength. In addition, it is also described that surface treatment or antirust treatment is performed using a silane coupling agent.

[专利文献1]WO2004/005588号 [Patent Document 1] WO2004/005588

[专利文献2]日本特开2007-007937号公报 [Patent Document 2] Japanese Unexamined Patent Publication No. 2007-007937

[专利文献3]日本特开2010-006071号公报。 [Patent Document 3] Japanese Unexamined Patent Publication No. 2010-006071.

发明内容 Contents of the invention

在附载体铜箔的开发中,至今为止确保极薄铜层与树脂基材的剥离强度一直被视为重点。因此,仍未对极薄铜层的电路形成性进行充分探讨,其仍有改善的空间。 In the development of copper foil with a carrier, securing the peel strength between the ultra-thin copper layer and the resin substrate has been regarded as an important point until now. Therefore, the circuit formability of the ultra-thin copper layer has not yet been fully studied, and there is still room for improvement.

对极薄铜层形成电路,通常是以下述方式进行:在将极薄铜层积层在树脂基材后去除载体,然后,在在极薄铜层上设置有特定图案的光阻的状态下,利用特定的蚀刻液进行蚀刻处理,去除未被光阻覆盖的部分的铜层。之后,通过去除光阻,制作具有所欲的导体图案的电路。 Forming a circuit on an ultra-thin copper layer is usually performed by removing the carrier after laminating the ultra-thin copper layer on a resin base, and then placing a photoresist with a specific pattern on the ultra-thin copper layer , using a specific etchant for etching to remove the copper layer not covered by the photoresist. After that, by removing the photoresist, a circuit with a desired conductor pattern is fabricated.

此处,在利用特定的蚀刻液进行蚀刻处理时,若极薄铜层的与树脂基材的界面附近部分对于蚀刻液的润湿性差,则蚀刻液的润湿范围不足。在此情形,与树脂基材的界面附近部分会产生蚀刻不均匀的部分,电路直线性变得不良。本发明提供对于极薄铜层的电路形成性良好的附载体铜箔的制造方法。又,提供蚀刻液的润湿性良好的附载体铜箔。 Here, when the etching process is performed with a specific etching solution, if the wettability of the ultra-thin copper layer and the resin substrate near the interface with the etching solution is poor, the wettability of the etching solution will be insufficient. In this case, non-uniform etching occurs in the vicinity of the interface with the resin substrate, resulting in poor circuit linearity. This invention provides the manufacturing method of the copper foil with a carrier favorable to the circuit formability of an ultra-thin copper layer. Moreover, the copper foil with a carrier favorable in the wettability of an etchant is provided.

以上述见解为基础所完成的本发明在一方面中,是一种附载体铜箔的制造方法,其包含下述加热处理步骤:对依序具备载体、中间层、极薄铜层、包含硅烷偶合处理层的表面处理层的附载体铜箔,进行1小时~8小时的加热温度为100℃~220℃的加热处理,或1小时~6小时的加热温度为100℃~220℃的加热处理,或2小时~4小时的加热温度为160℃~220℃的加热处理。 The present invention completed on the basis of the above knowledge is, in one aspect, a method for producing copper foil with a carrier, which includes the following heat treatment step: The copper foil with a carrier of the surface treatment layer of the coupling treatment layer is subjected to a heat treatment at a heating temperature of 100°C to 220°C for 1 hour to 8 hours, or a heat treatment at a heating temperature of 100°C to 220°C for 1 hour to 6 hours , or heat treatment at a heating temperature of 160° C. to 220° C. for 2 hours to 4 hours.

本发明在另一个方面中,是一种附载体铜箔的制造方法,其包含下述加热处理步骤:对依序具备载体、中间层、极薄铜层、表面处理层的附载体铜箔,将到达加热温度为止的升温速度设为超过50℃/小时,进行1小时~8小时的加热温度为100℃~220℃的加热处理,或1小时~6小时的加热温度为100℃~220℃的加热处理,或2小时~4小时的加热温度为160℃~220℃的加热处理。 In another aspect of the present invention, it is a method of manufacturing copper foil with a carrier, which includes the following heat treatment step: for the copper foil with a carrier sequentially provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer, The heating rate until reaching the heating temperature is set to exceed 50°C/hour, and the heating temperature is 100°C to 220°C for 1 hour to 8 hours, or the heating temperature is 100°C to 220°C for 1 hour to 6 hours heat treatment, or heat treatment at a heating temperature of 160°C to 220°C for 2 hours to 4 hours.

本发明的附载体铜箔的制造方法在一实施方案中,上述加热处理中的上述升温速度为200℃/小时以下。 In one Embodiment, the manufacturing method of the copper foil with a carrier which concerns on this invention WHEREIN: The said temperature increase rate in the said heat process is 200 degreeC/hour or less.

本发明的附载体铜箔的制造方法在另一实施方案中,上述加热处理步骤后在常温下所测得的载体的拉伸强度为300MPa以上。 In another embodiment of the manufacturing method of the copper foil with a carrier of this invention, the tensile strength of the carrier measured at normal temperature after the said heat treatment process is 300 MPa or more.

本发明的附载体铜箔的制造方法在再另一实施方案中,在上述加热处理步骤中,是在非活性气体环境下进行加热处理。 In yet another embodiment of the manufacturing method of the copper foil with a carrier of this invention, in the said heat treatment process, it heat-processes in an inert gas atmosphere.

本发明的附载体铜箔的制造方法在再另一实施方案中,在上述加热处理步骤中,在将附载体铜箔卷入至金属制的中空管中的状态下进行加热处理。 In still another embodiment, the manufacturing method of the copper foil with a carrier of this invention heat-processes in the state which wound the copper foil with a carrier in the metal hollow tube in the said heat treatment process.

本发明的附载体铜箔的制造方法在再另一实施方案中,在上述加热处理步骤中,将把附载体铜箔卷入至金属制的中空管中时的张力设为5~100kgf/m或20~100kgf/m从而进行加热处理。 In yet another embodiment of the method for producing copper foil with a carrier according to the present invention, in the heat treatment step, the tension at the time of winding the copper foil with a carrier into a metal hollow tube is 5 to 100 kgf/ m or 20 to 100kgf/m for heat treatment.

本发明的附载体铜箔的制造方法在再另一实施方案中,在上述加热处理步骤中,在将附载体铜箔卷入至金属制的中空管中的状态下,一边以0.01~600旋转/小时的速度旋转上述中空管一边进行加热处理。 In yet another embodiment of the method for producing copper foil with a carrier according to the present invention, in the heat treatment step, while the copper foil with a carrier is wrapped in a metal hollow tube, heat is heated at a temperature of 0.01 to 600 The heat treatment was performed while rotating the above-mentioned hollow tube at a speed of rotation/hour.

本发明的附载体铜箔的制造方法在再另一实施方案中,上述加热处理前的附载体铜箔进一步在上述载体侧的表面依序具备中间层、极薄铜层。 In still another embodiment of the manufacturing method of the copper foil with a carrier which concerns on this invention, the copper foil with a carrier before the said heat process further has an intermediate|middle layer and an ultra-thin copper layer in this order on the surface by the said carrier side.

本发明的附载体铜箔的制造方法在再另一实施方案中,上述加热处理前的附载体铜箔进一步在上述载体侧的表面具有表面处理层。 In yet another one Embodiment of the manufacturing method of the copper foil with a carrier which concerns on this invention, the copper foil with a carrier before the said heat process has a surface treatment layer further in the surface by the side of the said carrier.

本发明的附载体铜箔的制造方法在再另一实施方案中,上述表面处理层包含粗化处理层。 In yet another one Embodiment of the manufacturing method of the copper foil with a carrier which concerns on this invention, the said surface treatment layer contains a roughening treatment layer.

本发明的附载体铜箔的制造方法在再另一实施方案中,在上述表面处理层为粗化处理层的表面进一步具有选自由耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层所构成的群中的一种以上的层。 In yet another embodiment of the method for producing copper foil with a carrier according to the present invention, the surface of the above-mentioned surface treatment layer that is a roughening treatment layer further has a layer selected from a heat-resistant layer, an antirust layer, a chromate treatment layer, and a silane coupling layer. Processes one or more layers in a group of layers.

本发明的附载体铜箔的制造方法在再另一实施方案中,上述加热处理前的附载体铜箔在上述极薄铜层的表面具有选自由粗化处理层、耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层所组成的群中的一层以上的层来作为表面处理层。 In yet another embodiment of the method for producing copper foil with a carrier according to the present invention, the copper foil with a carrier before the heat treatment has a surface selected from a roughening treatment layer, a heat-resistant layer, and a rust-proof layer on the surface of the above-mentioned ultra-thin copper layer. One or more layers in the group consisting of the chromate treatment layer and the silane coupling treatment layer are used as the surface treatment layer.

本发明的附载体铜箔的制造方法在再另一实施方案中,上述加热处理前的附载体铜箔在上述表面处理层上具备树脂层。 In yet another one Embodiment of the manufacturing method of the copper foil with a carrier which concerns on this invention, the copper foil with a carrier before the said heat process is equipped with a resin layer on the said surface treatment layer.

本发明在再另一方面中,是一种覆铜积层板的制造方法,其使用有通过本发明的方法所制得的附载体铜箔。 In still another aspect, the present invention is a method for manufacturing a copper-clad laminate using the copper foil with a carrier produced by the method of the present invention.

本发明在再另一方面中,是一种印刷配线板的制造方法,其使用有通过本发明的方法所制得的附载体铜箔。 In still another aspect, this invention is the manufacturing method of a printed wiring board using the copper foil with a carrier obtained by the method of this invention.

本发明在再另一方面中,是一种印刷配线板的制造方法,其包含以下步骤: In yet another aspect, the present invention is a method of manufacturing a printed wiring board, which includes the following steps:

准备通过本发明的方法而制得的附载体铜箔与绝缘基板; Copper foil with carrier and insulating substrate prepared by the method of the present invention;

将上述附载体铜箔与绝缘基板积层;及 Laminate the above-mentioned copper foil with carrier and insulating substrate; and

在将上述附载体铜箔与绝缘基板积层后,经将上述附载体铜箔的载体剥离的步骤而形成覆铜积层板, After laminating the above-mentioned copper foil with a carrier and an insulating substrate, the step of peeling the carrier of the above-mentioned copper foil with a carrier is performed to form a copper-clad laminate,

其后,通过半加成法、减成法、部分加成法或改进半加成法(ModifiedSemiAdditive)中的任一方法形成电路。 Thereafter, a circuit is formed by any method of semi-additive method, subtractive method, partial additive method, or modified semi-additive method (Modified SemiAdditive).

本发明在再另一方面中,是一种印刷配线板的制造方法,其包含以下步骤: In yet another aspect, the present invention is a method of manufacturing a printed wiring board, which includes the following steps:

在通过本发明的方法而制得的附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成电路; Forming a circuit on the above-mentioned ultra-thin copper layer side surface or the above-mentioned carrier side surface of the copper foil with a carrier produced by the method of the present invention;

以埋没上述电路的方式在上述附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成树脂层; Forming a resin layer on the surface of the ultra-thin copper layer side of the copper foil with a carrier or the surface of the carrier side so as to bury the circuit;

在上述树脂层上形成电路; forming a circuit on the above-mentioned resin layer;

在上述树脂层上形成电路后,剥离上述载体或上述极薄铜层;及 After forming a circuit on the above resin layer, peeling off the above carrier or the above ultra-thin copper layer; and

在剥离上述载体后,去除上述极薄铜层或上述载体,由此使形成在上述极薄铜层侧表面或上述载体侧表面的埋没于上述树脂层的电路露出。 After peeling off the carrier, the ultra-thin copper layer or the carrier is removed, thereby exposing the circuit formed on the ultra-thin copper layer-side surface or the carrier-side surface buried in the resin layer.

本发明在再另一方面中,是一种电子机器的制造方法,其使用有通过本发明的方法所制得的印刷配线板。 This invention is another aspect. It is the manufacturing method of the electronic equipment using the printed wiring board manufactured by the method of this invention.

本发明在再另一方面中,是一种附载体铜箔,其是通过本发明的方法而制得。 In still another aspect, this invention is copper foil with a carrier manufactured by the method of this invention.

本发明在再另一方面中,是一种附载体铜箔,其依序具备载体、中间层、极薄铜层、包含硅烷偶合处理层的表面处理层,在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔(除了具备树脂层者以外),使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%(剩余部分为水)的组成的蚀刻液,放置30秒后擦掉蚀刻液后,蚀刻液的痕迹的最大直径与最小直径的差为10mm以下。 In yet another aspect of the present invention, it is a copper foil with a carrier, which sequentially includes a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer including a silane coupling treatment layer, with the ultra-thin copper foil side on the horizontal plane Place the copper foil with the carrier (except those with the resin layer) with the surface treatment layer on the top, and use a pipette to drop 30 μL of sulfuric acid 24% by weight-hydrogen peroxide 15% by weight (the rest is water) ) composition of the etchant, after leaving the etchant for 30 seconds and wiping off the etchant, the difference between the maximum diameter and the minimum diameter of the trace of the etchant is 10 mm or less.

本发明在再另一方面中,是一种附载体铜箔,其依序具备载体、中间层、极薄铜层、包含硅烷偶合处理层的表面处理层,在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔(除了具备树脂层者以外),使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%(剩余部分为水)的组成的蚀刻液,放置30秒后擦掉蚀刻液后,蚀刻液的痕迹的最大直径为25mm以上。 In yet another aspect of the present invention, it is a copper foil with a carrier, which sequentially includes a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer including a silane coupling treatment layer, with the ultra-thin copper foil side on the horizontal plane Place the copper foil with the carrier (except those with the resin layer) with the surface treatment layer on the top, and use a pipette to drop 30 μL of sulfuric acid 24% by weight-hydrogen peroxide 15% by weight (the rest is water) ) of the composition of the etching solution, after wiping off the etching solution after leaving it for 30 seconds, the maximum diameter of the trace of the etching solution is 25 mm or more.

本发明在再另一方面中,是一种附载体铜箔,其依序具备载体、中间层、极薄铜层、表面处理层,在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔(除了具备树脂层者以外),使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%(剩余部分为水)的组成的蚀刻液,放置30秒后擦掉蚀刻液后,蚀刻液的痕迹的最大直径与最小直径的差为10mm以下。 In yet another aspect of the present invention, it is a copper foil with a carrier, which sequentially includes a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer, and the surface treatment layer on the side of the ultra-thin copper foil is on the horizontal plane. Place copper foil with carrier (except those with resin layer) in the same way, and use a pipette to drop 30 μL of etching solution consisting of 24% by weight of sulfuric acid - 15% by weight of hydrogen peroxide (the rest is water) , after wiping off the etchant after standing for 30 seconds, the difference between the maximum diameter and the minimum diameter of the trace of the etchant is 10 mm or less.

本发明在再另一方面中,是一种附载体铜箔,其依序具备载体、中间层、极薄铜层、表面处理层,在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔(除了具备树脂层者以外),使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%(剩余部分为水)的组成的蚀刻液,放置30秒后擦掉蚀刻液后,蚀刻液的痕迹的最大直径为25mm以上。 In yet another aspect of the present invention, it is a copper foil with a carrier, which sequentially includes a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer, and the surface treatment layer on the side of the ultra-thin copper foil is on the horizontal plane. Place copper foil with carrier (except those with resin layer) in the same way, and use a pipette to drop 30 μL of etching solution consisting of 24% by weight of sulfuric acid - 15% by weight of hydrogen peroxide (the rest is water) , After wiping off the etching solution after leaving it for 30 seconds, the maximum diameter of the trace of the etching solution is more than 25mm.

本发明的附载体铜箔在再另一方面中,上述蚀刻液的痕迹的最大直径与最小直径的差为5mm以下。 In yet another aspect of the copper foil with a carrier of the present invention, the difference between the maximum diameter and the minimum diameter of the trace of the etching solution is 5 mm or less.

本发明的附载体铜箔在再另一方面中,上述蚀刻液的痕迹的最大直径为35mm以上。 In yet another aspect of the copper foil with a carrier of the present invention, the maximum diameter of the trace of the etching solution is 35 mm or more.

本发明在再另一方面中,是一种积层体,其是使用本发明的附载体铜箔而制得。 In still another aspect, this invention is a laminate manufactured using the copper foil with a carrier of this invention.

本发明在再另一方面中,是一种积层体,其含有本发明的附载体铜箔与树脂,上述附载体铜箔的端面的一部分或全部被上述树脂所覆盖。 In still another aspect, the present invention is a laminate comprising the copper foil with a carrier of the present invention and a resin, wherein part or all of the end faces of the copper foil with a carrier are covered with the resin.

本发明在再另一方面中,是一种积层体,其是将一个本发明的附载体铜箔自上述载体侧或上述表面处理层侧积层于另一个本发明的附载体铜箔的上述载体侧或上述表面处理层侧而成。 Still another aspect of the present invention is a laminate in which one copper foil with a carrier of the present invention is laminated on another copper foil with a carrier of the present invention from the carrier side or the surface treatment layer side. The above-mentioned carrier side or the above-mentioned surface treatment layer side is formed.

本发明的积层体在一实施方案中,上述一个附载体铜箔的上述载体侧表面或上述表面处理层侧表面与上述另一个附载体铜箔的上述载体侧表面或上述表面处理层侧表面视需要经由接着剂直接积层而被构成。 In one embodiment of the laminate of the present invention, the carrier-side surface or the surface-treated layer-side surface of the one copper foil with a carrier and the carrier-side surface or the surface-treated layer-side surface of the other copper foil with a carrier are If necessary, it can be constructed by direct lamination via an adhesive.

本发明的积层体在另一实施方案中,上述一个附载体铜箔的上述载体或上述表面处理层与上述另一个附载体铜箔的上述载体或上述表面处理层接合。 In another embodiment of the laminate of the present invention, the carrier or the surface treatment layer of the one copper foil with a carrier is bonded to the carrier or the surface treatment layer of the other copper foil with a carrier.

本发明的积层体在再另一实施方案中,上述积层体的端面的一部分或全部被树脂覆盖。 In yet another embodiment of the laminate of the present invention, part or all of the end faces of the laminate are covered with a resin.

本发明在再另一方面中,是一种印刷配线板,其是使用本发明的附载体铜箔制造而成的。 This invention is another one side. It is a printed wiring board manufactured using the copper foil with a carrier of this invention.

本发明在再另一方面中,是一种电子机器,其是使用本发明的印刷配线板制造而成的。 In still another aspect, the present invention is an electronic device manufactured using the printed wiring board of the present invention.

本发明在再另一方面中,是一种印刷配线板的制造方法,其包含以下步骤: In yet another aspect, the present invention is a method of manufacturing a printed wiring board, which includes the following steps:

准备本发明的附载体铜箔与绝缘基板; Prepare the copper foil with carrier and insulating substrate of the present invention;

将上述附载体铜箔与绝缘基板积层;及 Laminate the above-mentioned copper foil with carrier and insulating substrate; and

在将上述附载体铜箔与绝缘基板积层后,经将上述附载体铜箔的载体剥离的步骤而形成覆铜积层板, After laminating the above-mentioned copper foil with a carrier and an insulating substrate, the step of peeling the carrier of the above-mentioned copper foil with a carrier is performed to form a copper-clad laminate,

其后,通过半加成法、减成法、部分加成法或改进半加成法中的任一方法形成电路。 Thereafter, a circuit is formed by any one of semi-additive method, subtractive method, partial additive method, or modified semi-additive method.

本发明在再另一方面中,是一种印刷配线板的制造方法,其包含以下步骤: In yet another aspect, the present invention is a method of manufacturing a printed wiring board, which includes the following steps:

在本发明的附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成电路; A circuit is formed on the side surface of the above-mentioned ultra-thin copper layer or the surface of the above-mentioned carrier side of the copper foil with a carrier of the present invention;

以埋没上述电路的方式在上述附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成树脂层; Forming a resin layer on the surface of the ultra-thin copper layer side of the copper foil with a carrier or the surface of the carrier side so as to bury the circuit;

在形成上述树脂层后,剥离上述载体或上述极薄铜层;及 After forming the above-mentioned resin layer, peeling off the above-mentioned carrier or the above-mentioned ultra-thin copper layer; and

在剥离上述载体或上述极薄铜层后,去除上述极薄铜层或上述载体,由此使形成在上述极薄铜层侧表面或上述载体侧表面的埋没于上述树脂层的电路露出。 After the carrier or the ultra-thin copper layer is peeled off, the ultra-thin copper layer or the carrier is removed, thereby exposing the circuit formed on the ultra-thin copper layer side surface or the carrier-side surface buried in the resin layer.

本发明在再另一方面中,是一种印刷配线板的制造方法,其包含以下步骤: In yet another aspect, the present invention is a method of manufacturing a printed wiring board, which includes the following steps:

在本发明的附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成电路; A circuit is formed on the side surface of the above-mentioned ultra-thin copper layer or the surface of the above-mentioned carrier side of the copper foil with a carrier of the present invention;

以埋没上述电路的方式在上述附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成树脂层; Forming a resin layer on the surface of the ultra-thin copper layer side of the copper foil with a carrier or the surface of the carrier side so as to bury the circuit;

在上述树脂层上形成电路; forming a circuit on the above-mentioned resin layer;

在上述树脂层上形成电路后,剥离上述载体或上述极薄铜层;及 After forming a circuit on the above resin layer, peeling off the above carrier or the above ultra-thin copper layer; and

在剥离上述载体或上述极薄铜层后,去除上述极薄铜层或上述载体,由此使形成在上述极薄铜层侧表面或上述载体侧表面的埋没于上述树脂层的电路露出。 After the carrier or the ultra-thin copper layer is peeled off, the ultra-thin copper layer or the carrier is removed, thereby exposing the circuit formed on the ultra-thin copper layer side surface or the carrier-side surface buried in the resin layer.

本发明在再另一方面中,是一种印刷配线板的制造方法,其包含以下步骤: In yet another aspect, the present invention is a method of manufacturing a printed wiring board, which includes the following steps:

将本发明的附载体铜箔的上述极薄铜层侧表面或上述载体侧表面与树脂基板进行积层; The above-mentioned ultra-thin copper layer side surface or the above-mentioned carrier side surface of the copper foil with a carrier of the present invention is laminated with a resin substrate;

在与上述附载体铜箔的积层有树脂基板的侧为相反侧的上述极薄铜层侧表面或上述载体侧表面至少设置1次树脂层和电路此两层;及 At least one resin layer and a circuit are provided on the side surface of the ultra-thin copper layer or the surface of the carrier side opposite to the side of the copper foil with carrier on which the resin substrate is laminated; and

在形成上述树脂层及电路此两层后,从上述附载体铜箔剥离上述载体或上述极薄铜层。 After forming two layers of the said resin layer and a circuit, the said carrier or the said ultra-thin copper layer are peeled from the said copper foil with a carrier.

本发明在再另一方面中,是一种印刷配线板的制造方法,其包含以下步骤: In yet another aspect, the present invention is a method of manufacturing a printed wiring board, which includes the following steps:

将本发明的附载体铜箔的上述载体侧表面与树脂基板进行积层; The above-mentioned carrier-side surface of the copper foil with a carrier of the present invention is laminated with a resin substrate;

在与上述附载体铜箔的积层有树脂基板的侧为相反侧的极薄铜层侧表面至少设置1次树脂层和电路此两层;及 Provide at least two layers of a resin layer and a circuit on the surface of the ultra-thin copper layer side opposite to the side of the above-mentioned copper foil with a carrier on which the resin substrate is laminated; and

在形成上述树脂层及电路此两层后,从上述附载体铜箔剥离上述极薄铜层。 After forming two layers of the said resin layer and a circuit, the said ultra-thin copper layer is peeled from the said copper foil with a carrier.

通过本发明,可提供一种对极薄铜层的电路形成性良好的附载体铜箔的制造方法。又,提供蚀刻液的润湿性良好的附载体铜箔。 According to this invention, the manufacturing method of the copper foil with a carrier favorable to the circuit formability of an ultra-thin copper layer can be provided. Moreover, the copper foil with a carrier favorable in the wettability of an etchant is provided.

附图说明 Description of drawings

图1A~图1C是使用了本发明的附载体铜箔的印刷配线板的制造方法的具体实施例的自曝光-显影至电路镀敷-去除光阻剂为止的步骤中的配线板剖面的示意图。 1A to 1C are cross sections of the printed wiring board in the steps from exposure-development to circuit plating-photoresist removal in a specific example of the method of manufacturing a printed wiring board using copper foil with a carrier according to the present invention. schematic diagram.

图2D~图2F是使用了本发明的附载体铜箔的印刷配线板的制造方法的具体实施例的自积层树脂及第2层附载体铜箔至雷射开孔为止的步骤中的配线板剖面的示意图。 2D to 2F are the steps from the build-up resin and the second layer of copper foil with a carrier to the laser opening of the specific embodiment of the manufacturing method of the printed wiring board using the copper foil with a carrier of the present invention. Schematic diagram of a patch panel cutaway.

图3G~图3I是使用了本发明的附载体铜箔的印刷配线板的制造方法的具体实施例的自形成通孔填充物至剥离第1层载体为止的步骤中的配线板剖面的示意图。 3G to 3I are cross-sectional diagrams of the wiring board in the steps from the formation of the through-hole filling to the peeling of the first layer carrier in the specific embodiment of the method of manufacturing the printed wiring board using the copper foil with carrier of the present invention. schematic diagram.

图4J~图4K是使用了本发明的附载体铜箔的印刷配线板的制造方法的具体实施例的自快速蚀刻至形成凸块-铜柱为止的步骤中的配线板剖面的示意图。 4J to 4K are schematic diagrams of a cross section of a wiring board in steps from flash etching to bump-copper pillar formation in a specific example of the method of manufacturing a printed wiring board using copper foil with a carrier according to the present invention.

图5:是电路的俯视观察照片,其表示实验例中的自电路上面进行观察而得到的电路下端宽度的最大值与最小值的差(μm)的测定方法。 FIG. 5 : is a top view photograph of the circuit, showing the method of measuring the difference (μm) between the maximum and minimum width of the lower end of the circuit observed from the top of the circuit in the experimental example.

具体实施方式 detailed description

<附载体铜箔的制造方法> <Manufacturing method of copper foil with carrier>

作为依序具备有载体、中间层、极薄铜层的附载体铜箔的使用形态,首先,将极薄铜层的表面贴合于绝缘基板并进行热压接后,剥离载体。接着,在已和绝缘基板接着的极薄铜层设置特定图案的光阻。接着,利用特定的蚀刻液进行蚀刻处理,通过去除未被光阻所覆盖的部分的极薄铜层,而形成作为目的的导体图案,例如,制作具有特定电路的印刷配线板等。此处,通过特定的蚀刻液来进行蚀刻处理时,若极薄铜层的与树脂基材的界面附近部分对于蚀刻液的润湿性差,则蚀刻液的润湿范围变得不足。在此情形时,在与树脂基材的界面附近部分会产生蚀刻不均匀的部分,而使电路直线性变得不良。 As a usage form of the copper foil with a carrier provided with a carrier, an intermediate layer, and an ultra-thin copper layer in this order, first, the surface of the ultra-thin copper layer is bonded to an insulating substrate and thermocompression-bonded, and then the carrier is peeled off. Next, a photoresist with a specific pattern is placed on the ultra-thin copper layer that has been bonded to the insulating substrate. Next, etching is performed with a specific etchant to remove the ultra-thin copper layer not covered by the photoresist to form a target conductor pattern, for example, to produce a printed wiring board with a specific circuit. Here, when etching is performed with a specific etchant, if the wettability of the ultra-thin copper layer near the interface with the resin base material to the etchant is poor, the wetting range of the etchant becomes insufficient. In this case, uneven etching occurs in the vicinity of the interface with the resin substrate, resulting in poor circuit linearity.

对此,本发明的附载体铜箔的制造方法在一方面中,是在准备依序具备载体、中间层、极薄铜层、包含硅烷偶合处理层的表面处理层的附载体铜箔后,对该附载体铜箔进行1小时~8小时的加热温度为100℃~220℃的加热处理。再者,上述100℃~220℃是表示加热装置内的环境温度。如此,通过进行1小时~8小时的加热温度为100℃~220℃的加热处理,由于硅烷偶合处理层中的未反应的氢基会进行脱水缩合反应,因此该处理层除了会变得更牢固而提高与树脂基材的密合性之外,还会使极薄铜层与表面处理层之间的界面附近,及在具有多层表面处理层的情形时该多层之间的界面附近的原子组成不连续部分通过相互扩散而形成为连续的原子组成分布,因此极薄铜层的与树脂基材的界面附近部分对于蚀刻液的润湿性变得良好,在与树脂基材的界面附近部分蚀刻均匀,而使极薄铜层的电路直线性变得良好。再者,典型而言,极薄铜层主要由铜构成。又,表面处理层也可依序具有粗化处理层及/或耐热层及/或防锈层及/或铬酸盐处理层及硅烷偶合处理层,也可以任意的顺序来具有这些层。粗化处理层优选为主要由合金,例如铜合金或镍合金或钴合金等构成。粗化处理层主要也可由铜构成。铬酸盐处理层优选为主要由金属氧化物构成。硅烷偶合处理层优选为由有机硅化合物构成。 On the other hand, in one aspect of the manufacturing method of the copper foil with a carrier of the present invention, after preparing the copper foil with a carrier sequentially provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer including a silane coupling treatment layer, This copper foil with a carrier is heat-processed at the heating temperature of 100 degreeC - 220 degreeC for 1 hour - 8 hours. In addition, the said 100 degreeC - 220 degreeC represent the ambient temperature in a heating apparatus. In this way, by performing heat treatment at a heating temperature of 100° C. to 220° C. for 1 hour to 8 hours, since the unreacted hydrogen groups in the silane coupling treatment layer undergo dehydration condensation reaction, the treatment layer will become stronger. In addition to improving the adhesion to the resin base material, it will also make the vicinity of the interface between the ultra-thin copper layer and the surface treatment layer, and in the case of a multi-layer surface treatment layer, the vicinity of the interface between the multilayers. The discontinuous part of the atomic composition is formed into a continuous atomic composition distribution by interdiffusion, so the wettability of the ultra-thin copper layer near the interface with the resin substrate becomes good for the etchant, and near the interface with the resin substrate Partial etching is uniform, and the circuit linearity of the ultra-thin copper layer becomes good. Furthermore, typically, the ultra-thin copper layer is mainly composed of copper. In addition, the surface treatment layer may have a roughening treatment layer and/or a heat-resistant layer and/or a rust-proof layer and/or a chromate treatment layer and a silane coupling treatment layer in this order, and these layers may be provided in any order. It is preferable that the roughening treatment layer mainly consists of an alloy, for example, a copper alloy, a nickel alloy, or a cobalt alloy. The roughening layer can also mainly consist of copper. The chromate treatment layer is preferably composed mainly of metal oxides. The silane coupling treatment layer is preferably composed of an organosilicon compound.

通常,由于将附载体铜箔与树脂基材贴合时进行50~120分钟左右的温度为160~220℃的加热压接,因此虽然在此时上述的相互扩散也会在某种程度上进行,但是视条件也会有相互扩散不足的情形。因此,通过将上述加热处理在与树脂基材接着前进行,可使蚀刻性及其均匀性的提高效果更为确实。 Usually, when the copper foil with a carrier is bonded to the resin substrate, heat-compression bonding at a temperature of 160 to 220°C is performed for about 50 to 120 minutes, so although the above-mentioned interdiffusion also proceeds to some extent , but depending on the conditions, there may be insufficient mutual diffusion. Therefore, by performing the above-mentioned heat treatment before bonding to the resin base material, the effect of improving the etching property and its uniformity can be made more reliable.

再者,在附载体铜箔的极薄铜层侧表面检测到Si的情形时,可通过XPS等表面分析来判断存在硅烷偶合处理层。 In addition, when Si is detected on the surface of the ultra-thin copper layer side of the copper foil with a carrier, the presence of the silane coupling treatment layer can be judged by surface analysis such as XPS.

在该加热处理中,在温度未达100℃,或加热时间未达1小时的情形时,各处理层间的界面附近的相互扩散变得不足。又,在该加热处理中,在温度超过220℃,或加热时间超过8小时的情形时,会有可能生成载体与极薄铜箔的剥离强度产生变化,或发生极薄铜层的晶粒成长从而使机械强度下降等其他的问题。在该加热处理步骤中,优选为进行1小时~6小时的加热温度为100℃~220℃的加热处理,优选为进行1小时~6小时的加热温度为120℃~220℃的加热处理,更优选为进行2小时~4小时的加热温度为160℃~220℃的加热处理。 In this heat treatment, when the temperature is less than 100° C. or the heating time is less than 1 hour, mutual diffusion in the vicinity of the interface between the respective treatment layers becomes insufficient. In addition, in this heat treatment, when the temperature exceeds 220°C or the heating time exceeds 8 hours, the peel strength between the carrier and the ultra-thin copper foil may change, or the grain growth of the ultra-thin copper layer may occur. Thereby reducing the mechanical strength and other problems. In this heat treatment step, it is preferable to carry out heat treatment at a heating temperature of 100°C to 220°C for 1 hour to 6 hours, preferably to carry out heat treatment at a heating temperature of 120°C to 220°C for 1 hour to 6 hours, and more preferably It is preferable to perform heat treatment at a heating temperature of 160° C. to 220° C. for 2 hours to 4 hours.

本发明的附载体铜箔的制造方法在另一方面中,包含下述加热处理步骤:对依序具备载体、中间层、极薄铜层、表面处理层的附载体铜箔,将到达加热温度为止的升温速度设为超过50℃/小时,进行1小时~8小时的加热温度为100℃~220℃的加热处理。此处,该升温速度是从加热开始至第一次到达加热温度为止的升温速度。在升温速度为50℃/小时以下的情形,有加热处理的生产性下降的情况,又,由于加热处理的时间长,因此有附载体铜箔表面被氧化的情况。又,升温速度优选为200℃/小时以下。在升温速度超过200℃/小时的情形,会有因卷芯与附载体铜箔之间的热膨胀率的差异而造成伸长程度不同,从而产生皱折的情形。又,在超过200℃/小时的情形,有附载体铜箔对于蚀刻液的润湿性恶化的情形。其原因并不清楚,但有可能是因为由于附载体铜箔剧烈地膨胀,导致卷成线圈状时接触的表面处理层与载体之间发生摩擦或偏移,或是产生对表面处理层的应力集中,该摩擦/偏移/应力集中等和表面处理层中的部分的移位的产生有所关联,该移位会对表面处理层的元素的扩散状态造成影响。 In another aspect, the method of manufacturing copper foil with a carrier of the present invention includes a heat treatment step of heating the copper foil with a carrier sequentially provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer to the heating temperature. The rate of temperature increase up to this point was set to exceed 50° C./hour, and heat treatment was performed at a heating temperature of 100° C. to 220° C. for 1 hour to 8 hours. Here, the temperature increase rate is the temperature increase rate from the start of heating until reaching the heating temperature for the first time. When the rate of temperature increase is 50° C./hour or less, the productivity of the heat treatment may decrease, and since the time of the heat treatment is long, the surface of the copper foil with a carrier may be oxidized. Also, the rate of temperature increase is preferably 200° C./hour or less. When the temperature increase rate exceeds 200°C/hour, the degree of elongation may vary due to the difference in thermal expansion coefficient between the winding core and the copper foil with carrier, resulting in wrinkles. Moreover, when exceeding 200 degreeC/hour, the wettability of the copper foil with a carrier with respect to etchant may deteriorate. The reason for this is not clear, but it may be that the copper foil with a carrier expands violently, causing friction or misalignment between the surface treatment layer and the carrier that come into contact with the coil, or stress on the surface treatment layer. Concentration, this friction, displacement, stress concentration, etc. are related to generation of partial displacement in the surface treatment layer, and this displacement affects the diffusion state of elements in the surface treatment layer.

上述到达加热温度为止的升温速度更优选为70℃/小时~200℃/小时,再更优选为100℃/小时~200℃/小时,再更优选为150℃/小时~200℃/小时。 The temperature increase rate until reaching the heating temperature is more preferably 70°C/hour to 200°C/hour, still more preferably 100°C/hour to 200°C/hour, still more preferably 150°C/hour to 200°C/hour.

在本发明的附载体铜箔的制造方法中,在该加热处理步骤中,优选为在不含有会造成载体表面及极薄铜层表面氧化或恶化的氧、水蒸气等气体的环境下进行加热处理,例如优选为在氦、氖、氩、氮等及该等的混合气体的非活性气体环境下进行加热处理。 In the method for producing copper foil with a carrier of the present invention, in the heat treatment step, heating is preferably performed in an environment that does not contain gases such as oxygen and water vapor that may cause oxidation or deterioration of the surface of the carrier and the surface of the ultra-thin copper layer. For the treatment, for example, heat treatment is preferably performed in an inert gas atmosphere of helium, neon, argon, nitrogen, or a mixed gas thereof.

在本发明的附载体铜箔的制造方法中,在上述加热处理步骤,优选为在将附载体铜箔卷入至金属制的中空管中的状态下进行加热处理。通过在将附载体铜箔卷入至金属制的中空管中的状态下进行加热处理,可利用在导热良好的金属管中通气而也可自内侧来对附载体铜箔进行加热,从而可进行有效地热处理。金属制的中空管并无特别限定,例如优选为碳钢、不锈钢制,作为其大小,可设为外径为7cm~20cm且厚度为0.5cm~3.0cm。 In the manufacturing method of the copper foil with a carrier of this invention, it is preferable to heat-process in the state which wound up the copper foil with a carrier in the said heat treatment process in the hollow tube made of metal. By heating the copper foil with a carrier wrapped in a metal hollow tube, it is possible to heat the copper foil with a carrier from the inside by passing air through the metal tube with good thermal conductivity. effective heat treatment. The metal hollow tube is not particularly limited, and is preferably made of carbon steel or stainless steel, for example, and its size may be 7 cm to 20 cm in outer diameter and 0.5 cm to 3.0 cm in thickness.

在本发明的附载体铜箔的制造方法中,在上述加热处理步骤中,优选为进行下述加热处理:将把附载体铜箔卷入金属制的中空管中时的张力设为5~100kgf/m。该张力是附载体铜箔的每单位宽度(宽度1m)的张力。通过将该张力设为5kgf/m以上,可抑制氧的卷入从而防止附载体铜箔的氧化。又,通过将该张力设为100kgf/m以下,可防止卷取时所产生的皱折。 In the manufacturing method of the copper foil with a carrier of the present invention, in the above-mentioned heat treatment step, it is preferable to carry out the following heat treatment: the tension when the copper foil with a carrier is wound into a metal hollow tube is set to 5 to 5. 100kgf/m. This tension is the tension per unit width (width 1m) of the copper foil with a carrier. By setting this tension to 5 kgf/m or more, entrainment of oxygen can be suppressed, and oxidation of the copper foil with a carrier can be prevented. In addition, by setting the tension to 100 kgf/m or less, wrinkles generated at the time of winding can be prevented.

该张力更优选为10kgf/m以上,更优选为20kgf/m以上,更优选为20~100kgf/m,再更优选为20~50kgf/m,再更优选为20~30kgf/m。 The tension is more preferably 10 kgf/m or more, more preferably 20 kgf/m or more, more preferably 20 to 100 kgf/m, still more preferably 20 to 50 kgf/m, still more preferably 20 to 30 kgf/m.

在本发明的附载体铜箔的制造方法中,在上述加热处理步骤中,优选为在将附载体铜箔卷入至金属制的中空管中的状态下,一边以0.01~600旋转/小时的速度旋转上述中空管一边进行加热处理。通过一边以0.01旋转/小时以上且600旋转/小时以下的相对较低的速度来旋转中空管,一边进行加热处理,可去除被卷入在经卷取的铜箔与铜箔之间的氧,从而防止加热处理中的附载体铜箔的氧化。该中空管的旋转速度更优选为0.01~180旋转/小时,更优选为0.01~120旋转/小时,更优选为0.01~70旋转/小时,更优选为1~70旋转/小时。 In the method for producing copper foil with a carrier according to the present invention, in the heat treatment step, it is preferable to rotate the copper foil with a carrier at 0.01 to 600 rotations/hour while wrapping the copper foil with a carrier in a hollow metal tube. The above hollow tube is rotated at a certain speed while heat treatment is performed. By performing heat treatment while rotating the hollow tube at a relatively low speed of 0.01 rotations/hour or more and 600 rotations/hour or less, oxygen trapped between the wound copper foil and copper foil can be removed , thereby preventing oxidation of the copper foil with a carrier during heat treatment. The rotation speed of the hollow tube is more preferably 0.01-180 rotations/hour, more preferably 0.01-120 rotations/hour, more preferably 0.01-70 rotations/hour, more preferably 1-70 rotations/hour.

在本发明的附载体铜箔的制造方法中,优选为上述加热处理步骤后在常温下所测得的载体的拉伸强度为300MPa以上。通过如上所述般加热处理步骤后在常温下所测得的载体的拉伸强度为300MPa以上,可充分保持极薄铜层发挥作为载体的功能时的刚性。 In the manufacturing method of the copper foil with a carrier of this invention, it is preferable that the tensile strength of the carrier measured at normal temperature after the said heat treatment process is 300 MPa or more. The tensile strength of the carrier measured at normal temperature after the heat treatment step as described above is 300 MPa or more, and the rigidity when the ultra-thin copper layer functions as a carrier can be sufficiently maintained.

该载体的拉伸强度更优选为350MPa以上,再更优选为380MPa以上,更典型为350~500MPa,再更典型为380~450MPa。 The tensile strength of the support is more preferably 350 MPa or more, still more preferably 380 MPa or more, more typically 350 to 500 MPa, and still more typically 380 to 450 MPa.

<附载体铜箔> <Copper foil with carrier>

以下,若未特别说明,则附载体铜箔的实施方案是对本发明的加热处理前进行说明,但是该实施方案对于加热处理后(通过本发明的附载体铜箔的制造方法而制得的附载体铜箔)也同样适用。 Hereinafter, unless otherwise specified, the embodiment of the copper foil with a carrier is described before the heat treatment of the present invention, but this embodiment is for the heat treatment (the copper foil with a carrier produced by the method of manufacturing the copper foil with a carrier of the present invention) Carrier copper foil) is also suitable.

本发明的附载体铜箔依序具有载体、中间层、极薄铜层、表面处理层。附载体铜箔本身的使用方法为业者所周知,例如可将极薄铜层的表面贴合于纸基材酚树脂、纸基材环氧树脂、合成纤维布基材环氧树脂、玻璃布-纸复合基材环氧树脂、玻璃布-玻璃不织布复合基材环氧树脂及玻璃布基材环氧树脂、聚酯膜、聚酰亚胺膜、液晶聚合物膜、氟树脂膜等绝缘基板并进行热压接后剥离载体,将粘合在绝缘基板的极薄铜层蚀刻成目标的导体图案,最终制造印刷配线板。 The copper foil with a carrier of the present invention has a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer in this order. The use method of copper foil with carrier itself is well known in the industry. For example, the surface of the ultra-thin copper layer can be bonded to paper-based phenol resin, paper-based epoxy resin, synthetic fiber cloth-based epoxy resin, glass cloth- Paper composite substrate epoxy resin, glass cloth-glass non-woven composite substrate epoxy resin and glass cloth substrate epoxy resin, polyester film, polyimide film, liquid crystal polymer film, fluororesin film and other insulating substrates After thermocompression bonding, the carrier is peeled off, and the ultra-thin copper layer adhered to the insulating substrate is etched into the target conductor pattern, and finally a printed wiring board is manufactured.

<载体> <Carrier>

可以用于本发明的载体典型而言为金属箔或树脂膜,例如以铜箔、铜合金箔、镍箔、镍合金箔、铁箔、铁合金箔、不锈钢箔、铝箔、铝合金箔、绝缘树脂膜、聚酰亚胺膜、LCP膜的形态提供。 The carrier that can be used in the present invention is typically metal foil or resin film, such as copper foil, copper alloy foil, nickel foil, nickel alloy foil, iron foil, iron alloy foil, stainless steel foil, aluminum foil, aluminum alloy foil, insulating resin Available in the form of film, polyimide film, and LCP film.

可以用于本发明的载体典型而言以压延铜箔或电解铜箔的形态提供。通常,电解铜箔是使铜从硫酸铜镀浴电解析出到钛或不锈钢的转筒上而制造,压延铜箔是反复进行利用压延辊的塑性加工和热处理而制造。作为铜箔的材料,除了精铜(JISH3100合金编号C1100)或无氧铜(JISH3100合金编号C1020或JISH3510合金编号C1011)等高纯度铜以外,例如也可以使用掺Sn铜、掺Ag铜、添加了Cr、Zr或Mg等的铜合金、添加了Ni及Si等的卡逊系铜合金之类的铜合金。 The carrier that can be used in the present invention is typically provided in the form of rolled copper foil or electrolytic copper foil. Usually, electrolytic copper foil is manufactured by electrolytically depositing copper from a copper sulfate plating bath onto a titanium or stainless steel drum, and rolled copper foil is manufactured by repeating plastic working and heat treatment with rolling rolls. As the material of copper foil, in addition to high-purity copper such as refined copper (JISH3100 alloy number C1100) or oxygen-free copper (JISH3100 alloy number C1020 or JISH3510 alloy number C1011), for example, Sn-doped copper, Ag-doped copper, added Copper alloys such as Cr, Zr, or Mg, and copper alloys such as Cason-based copper alloys to which Ni, Si, etc. have been added.

另外,作为电解铜箔,可以利用以下电解液组成及制造条件制作。 In addition, as electrolytic copper foil, it can manufacture using the following electrolytic solution composition and manufacturing conditions.

再者,本说明书中所记载的铜箔的制造、铜箔的表面处理或铜箔的镀敷等中所使用的处理液的剩余部分只要没有特别明示,则为水。 In addition, the remainder of the processing liquid used for the manufacture of copper foil described in this specification, the surface treatment of copper foil, the plating of copper foil, etc. is water unless otherwise specified.

<电解液组成> <Electrolyte composition>

铜:90~110g/L Copper: 90~110g/L

硫酸:90~110g/L Sulfuric acid: 90~110g/L

氯:50~100ppm Chlorine: 50~100ppm

调平剂1(双(3-磺丙基)二硫化物):10~30ppm Leveling agent 1 (bis(3-sulfopropyl) disulfide): 10~30ppm

调平剂2(胺化合物):10~30ppm Leveling agent 2 (amine compound): 10-30ppm

上述胺化合物可以使用以下化学式的胺化合物。 As the above-mentioned amine compound, an amine compound of the following chemical formula can be used.

(该化学式中,R1及R2选自由羟基烷基、醚基、芳基、芳香族取代烷基、不饱和烃基、烷基组成的群) ( In this chemical formula , R1 and R2 are selected from the group consisting of hydroxyalkyl, ether group, aryl group, aromatic substituted alkyl group, unsaturated hydrocarbon group, and alkyl group)

<制造条件> <Manufacturing conditions>

电流密度:70~100A/dm2 Current density: 70~100A/ dm2

电解液温度:50~60℃ Electrolyte temperature: 50~60℃

电解液线速度:3~5m/sec Electrolyte linear velocity: 3~5m/sec

电解时间:0.5~10分钟 Electrolysis time: 0.5 to 10 minutes

另外,本说明书中将用语“铜箔”单独使用时,也包括铜合金箔在内。 In addition, when the term "copper foil" is used alone in this specification, copper alloy foil is also included.

关于可以用于本发明的载体的厚度也没有特别限制,只要适当调整成在发挥作为载体的作用的方面所合适的厚度便可,例如可以设为5μm以上。但若过厚,则生产成本提高,所以通常优选设为35μm以下。因此,载体的厚度典型而言为8~70μm,更典型而言为12~70μm,更典型而言为18~35μm。另外,从降低原料成本的观点来说,载体的厚度小为优选。因此,载体的厚度典型而言为5μm以上且35μm以下,优选为5μm以上且18μm以下,优选为5μm以上且12μm以下,优选为5μm以上且11μm以下,优选为5μm以上且10μm以下。另外,在载体厚度小的情况下,在载体通箔时容易产生皱褶。为了防止产生皱褶,有效的是例如使附载体铜箔制造装置的运送辊平滑,或缩短运送辊和下一个运送辊的距离。另外,在作为印刷配线板的制造方法之一的埋入法(EnbeddedProcess)使用附载体铜箔的情况下,载体的刚性必须为高。因此,在用于埋入法的情况下,载体的厚度优选为18μm以上且300μm以下,优选为25μm以上且150μm以下,优选为35μm以上且100μm以下,进一步更优选为35μm以上且70μm以下。 The thickness of the carrier that can be used in the present invention is not particularly limited, as long as it is appropriately adjusted to a thickness suitable for functioning as a carrier, for example, it can be set to 5 μm or more. However, if it is too thick, the production cost will increase, so it is usually preferably set to 35 μm or less. Therefore, the thickness of the carrier is typically 8 to 70 μm, more typically 12 to 70 μm, more typically 18 to 35 μm. In addition, from the viewpoint of reducing raw material costs, it is preferable that the thickness of the carrier is small. Therefore, the thickness of the carrier is typically 5 μm to 35 μm, preferably 5 μm to 18 μm, preferably 5 μm to 12 μm, preferably 5 μm to 11 μm, and preferably 5 μm to 10 μm. In addition, when the thickness of the carrier is small, wrinkles are easily generated when the carrier passes through the foil. In order to prevent wrinkles, it is effective, for example, to smoothen the conveyance roller of the copper foil with carrier manufacturing apparatus, or to shorten the distance between the conveyance roller and the next conveyance roller. Moreover, when using the copper foil with a carrier by the embedding method (Enbedded Process) which is one of the manufacturing methods of a printed wiring board, the rigidity of a carrier must be high. Therefore, when used in the embedding method, the thickness of the carrier is preferably from 18 μm to 300 μm, preferably from 25 μm to 150 μm, preferably from 35 μm to 100 μm, and even more preferably from 35 μm to 70 μm.

<中间层> <Middle layer>

在载体上设置中间层。也可在载体与中间层之间设置其他层。本发明中使用的中间层只要为如下构成则并无特别限定:在附载体铜箔向绝缘基板积层的步骤前极薄铜层不易自载体剥离,另一方面,在向绝缘基板积层的步骤后极薄铜层可自载体剥离。例如,本发明的附载体铜箔的中间层也可含有选自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn、这些金属的合金、这些金属的水合物、这些金属的氧化物、有机物所组成的群中的一种或两种以上。又,中间层也可为多层。又,中间层也可设置在载体的两面。 An intermediate layer is provided on the carrier. It is also possible to arrange other layers between the carrier and the intermediate layer. The intermediate layer used in the present invention is not particularly limited as long as it has a structure in which the ultra-thin copper layer is not easily peeled off from the carrier before the step of laminating the copper foil with carrier on the insulating substrate, and on the other hand The very thin copper layer can be stripped from the carrier after the step. For example, the intermediate layer of the copper foil with a carrier of the present invention may also contain materials selected from Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, alloys of these metals, hydrates of these metals, One or two or more of these metal oxides and organic compounds. In addition, the intermediate layer may be multilayered. Also, the intermediate layer may be provided on both surfaces of the carrier.

又,例如,中间层可通过如下方式构成:自载体侧形成由选自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所组成的元素群中的一种元素构成的单一金属层,或者由选自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所组成的元素群中的一种或两种以上的元素构成的合金层,在其上形成由选自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所组成的元素群中的一种元素构成的单一金属层,或者由选自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所组成的元素群中的一种或两种以上的元素构成的合金层,或者由选自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所组成的元素群中的一种或两种以上的元素的水合物或氧化物或有机物所构成的层。 Also, for example, the intermediate layer can be constituted by forming an element selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn from the carrier side. A single metal layer, or an alloy layer composed of one or two or more elements selected from the element group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn , forming a single metal layer composed of one element selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, or composed of Cr , Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn element group consisting of one or two or more elements in the alloy layer, or an alloy layer selected from Cr, Ni, Co, A layer composed of hydrates or oxides or organic substances of one or more elements in the element group consisting of Fe, Mo, Ti, W, P, Cu, Al, and Zn.

又,可在载体的单面或双面上设置含Ni的中间层。中间层优选为在载体上依序积层镍或含镍的合金的任1种的层、及含有铬、铬合金、铬的氧化物中的任1种以上的层而构成。并且,优选为在镍或含镍的合金的任1种的层及/或含有铬、铬合金、铬的氧化物中的任1种以上的层中含有锌。此处,所谓含镍的合金,是指由镍与选自由钴、铁、铬、钼、锌、钽、铜、铝、磷、钨、锡、砷及钛所组成的群中的一种以上元素构成的合金。含镍的合金也可为由3种以上的元素构成的合金。又,所谓铬合金,是指由铬与选自由钴、铁、镍、钼、锌、钽、铜、铝、磷、钨、锡、砷及钛所组成的群中的一种以上元素构成的合金。铬合金也可为由3种以上的元素构成的合金。又,含有铬、铬合金、铬的氧化物中的任1种以上的层也可为铬酸盐处理层。此处,所谓铬酸盐处理层,是指经含有铬酸酐、铬酸、二铬酸、铬酸盐或二铬酸盐的液处理的层。铬酸盐处理层也可含有钴、铁、镍、钼、锌、钽、铜、铝、磷、钨、锡、砷及钛等元素(也可为金属、合金、氧化物、氮化物、硫化物等任一种形态)。作为铬酸盐处理层的具体实施例,可列举:纯铬酸盐处理层或铬酸锌处理层等。在本发明中,将经铬酸酐或二铬酸钾水溶液处理的铬酸盐处理层称为纯铬酸盐处理层。又,在本发明中,将经含有铬酸酐或二铬酸钾及锌的处理液处理的铬酸盐处理层称为铬酸锌处理层。 In addition, a Ni-containing intermediate layer may be provided on one or both surfaces of the carrier. The intermediate layer is preferably constituted by sequentially laminating any one layer of nickel or an alloy containing nickel, and one or more layers containing chromium, a chromium alloy, or an oxide of chromium on a carrier. Furthermore, it is preferable to contain zinc in the layer containing any one of nickel or an alloy containing nickel and/or any one or more of chromium, a chromium alloy, and an oxide of chromium. Here, the so-called nickel-containing alloy refers to nickel and one or more selected from the group consisting of cobalt, iron, chromium, molybdenum, zinc, tantalum, copper, aluminum, phosphorus, tungsten, tin, arsenic, and titanium. alloys of elements. The nickel-containing alloy may be an alloy composed of three or more elements. In addition, the so-called chromium alloy refers to chromium and one or more elements selected from the group consisting of cobalt, iron, nickel, molybdenum, zinc, tantalum, copper, aluminum, phosphorus, tungsten, tin, arsenic and titanium. alloy. The chromium alloy may be an alloy composed of three or more elements. In addition, the layer containing any one or more of chromium, chromium alloy, and chromium oxide may be a chromate treatment layer. Here, the chromate-treated layer refers to a layer treated with a solution containing chromic anhydride, chromic acid, dichromic acid, chromate, or dichromate. The chromate treatment layer can also contain elements such as cobalt, iron, nickel, molybdenum, zinc, tantalum, copper, aluminum, phosphorus, tungsten, tin, arsenic and titanium (also can be metal, alloy, oxide, nitride, sulfide, etc.) any form of matter). Specific examples of the chromate treatment layer include: a pure chromate treatment layer, a zinc chromate treatment layer, and the like. In the present invention, the chromate treatment layer treated with chromic anhydride or potassium dichromate aqueous solution is called pure chromate treatment layer. In addition, in the present invention, the chromate-treated layer treated with a treatment solution containing chromic anhydride or potassium dichromate and zinc is referred to as a zinc-chromate-treated layer.

又,中间层优选为在载体上依序积层镍、镍-锌合金、镍-磷合金、镍-钴合金中的任1种的层,及铬酸锌处理层、纯铬酸盐处理层、镀铬层中的任1种的层而构成,中间层进而优选为在载体上依序积层镍层或镍-锌合金层、及铬酸锌处理层而构成,或者依序积层镍-锌合金层、及纯铬酸盐处理层或铬酸锌处理层而构成。镍与铜的接着力高于铬与铜的接着力,因此在剥离极薄铜层时,变成在极薄铜层与铬酸盐处理层的界面剥离。又,对于中间层的镍,期待防止铜成分自载体扩散至极薄铜层的障壁效果。又,优选为不对中间层进行镀铬而形成铬酸盐处理层。镀铬是在表面形成致密的铬氧化物层,因此在利用电镀形成极薄铜箔时,电阻上升,容易产生针孔。形成有铬酸盐处理层的表面是形成有与镀铬相比并不致密的铬氧化物层,因此不易成为利用电镀形成极薄铜箔时的电阻,而可减少针孔。此处,通过形成铬酸锌处理层作为铬酸盐处理层,而使利用电镀形成极薄铜箔时的电阻低于通常的铬酸盐处理层,可进一步抑制针孔的产生。 In addition, the intermediate layer is preferably a layer in which any one of nickel, nickel-zinc alloy, nickel-phosphorus alloy, and nickel-cobalt alloy is sequentially laminated on the carrier, and a zinc chromate treatment layer and a pure chromate treatment layer , chrome-plated layer, and the intermediate layer is preferably formed by sequentially laminating a nickel layer or a nickel-zinc alloy layer, and a zinc chromate treatment layer on a carrier, or sequentially laminating nickel-zinc alloy layers. Zinc alloy layer, and pure chromate treatment layer or zinc chromate treatment layer. Since the adhesive force between nickel and copper is higher than that between chromium and copper, when the ultra-thin copper layer is peeled off, it is peeled at the interface between the ultra-thin copper layer and the chromate-treated layer. Also, nickel in the intermediate layer is expected to have a barrier effect to prevent the diffusion of copper components from the carrier to the ultra-thin copper layer. Also, it is preferable to form a chromate treatment layer without performing chrome plating on the intermediate layer. Chromium plating forms a dense chromium oxide layer on the surface, so when an ultra-thin copper foil is formed by electroplating, the resistance increases and pinholes are likely to occur. The surface on which the chromate treatment layer is formed has a chromium oxide layer that is less dense than chrome plating, so it is less likely to become a resistance when forming an ultra-thin copper foil by electroplating, and pinholes can be reduced. Here, by forming a zinc chromate layer as a chromate layer, the electrical resistance when an ultra-thin copper foil is formed by electroplating is lower than that of a normal chromate layer, and the occurrence of pinholes can be further suppressed.

在使用电解铜箔作为载体的情形时,就减少针孔的观点而言,优选为在光泽面设置中间层。 When using electrolytic copper foil as a carrier, it is preferable to provide an intermediate layer on the glossy surface from the viewpoint of reducing pinholes.

中间层中的铬酸盐处理层较薄地存在于极薄铜层的界面时,在对绝缘基板进行积层的步骤前极薄铜层不会自载体剥离,另一方面,可获得在对绝缘基板进行积层的步骤后可将极薄铜层自载体剥离的特性,故而优选。在未设置镍层或含镍的合金层(例如镍-锌合金层)而使铬酸盐处理层存在于载体与极薄铜层的交界的情形时,剥离性几乎未提高,在无铬酸盐处理层而直接将镍层或含镍的合金层(例如镍-锌合金层)与极薄铜层积层的情形时,随着镍层或含镍的合金层(例如镍-锌合金层)中的镍量剥离强度过强或过弱,而无法获得适当的剥离强度。 When the chromate-treated layer in the intermediate layer exists thinly at the interface of the ultra-thin copper layer, the ultra-thin copper layer will not be peeled off from the carrier before the step of laminating the insulating substrate. It is preferable because the ultra-thin copper layer can be peeled off from the carrier after the substrate is laminated. When no nickel layer or nickel-containing alloy layer (such as nickel-zinc alloy layer) is provided and the chromate treatment layer exists at the junction of the carrier and the ultra-thin copper layer, the peelability is hardly improved. When the nickel layer or nickel-containing alloy layer (such as nickel-zinc alloy layer) is directly laminated with the ultra-thin copper layer, the nickel layer or nickel-containing alloy layer (such as nickel-zinc alloy layer) ) The amount of nickel in the peel strength is too strong or too weak to obtain an appropriate peel strength.

又,若铬酸盐处理层存在于载体与镍层或含镍的合金层(例如镍-锌合金层)的交界,则在剥离极薄铜层时中间层也随之剥离,即在载体与中间层之间发生剥离,故而欠佳。此种状况不仅在与载体的界面设置铬酸盐处理层的情况下会发生,若在与极薄铜层的界面设置铬酸盐处理层时铬量过多,则也会发生。认为其原因在于,由于铜与镍容易固溶,故而若使该等接触,则会因相互扩散而提高接着力,变得不易剥离,另一方面,由于铬与铜不易固溶,不易发生相互扩散,故而在铬与铜的界面接着力较弱,容易剥离。又,在中间层的镍量不足的情形时,在载体与极薄铜层之间仅存微量的铬,故而两者进行密合而变得难以剥离。 Also, if the chromate treatment layer exists at the junction of the carrier and the nickel layer or nickel-containing alloy layer (such as nickel-zinc alloy layer), the intermediate layer will also be peeled off when the ultra-thin copper layer is peeled off, that is, between the carrier and the nickel-containing alloy layer. Since peeling occurred between the intermediate layers, it was unfavorable. This situation occurs not only when the chromate treatment layer is provided at the interface with the carrier, but also occurs when the chromate treatment layer is provided at the interface with the ultra-thin copper layer when the amount of chromium is too large. The reason for this is considered to be that since copper and nickel are easily solid-soluted, if they are brought into contact with each other, the adhesive force will be improved due to mutual diffusion, and it will become difficult to peel off. Diffusion, so the adhesion force at the interface between chromium and copper is weak and easy to peel off. Also, when the amount of nickel in the intermediate layer is insufficient, only a small amount of chromium exists between the carrier and the ultra-thin copper layer, so that both are closely bonded and it becomes difficult to peel off.

中间层的镍层或含镍的合金层(例如镍-锌合金层)例如可通过如电镀、无电解镀敷及浸渍镀敷的湿式镀敷,或如溅镀、CVD及PDV的干式镀敷而形成。就成本的观点而言,优选为电镀。再者,在载体为树脂膜的情形时,可通过如CVD及PDV的干式镀敷或如无电解镀敷及浸渍镀敷的湿式镀敷而形成中间层。 The nickel layer or nickel-containing alloy layer (e.g. nickel-zinc alloy layer) of the intermediate layer can be deposited, for example, by wet plating such as electroplating, electroless plating and immersion plating, or dry plating such as sputtering, CVD and PDV. Apply to form. From the viewpoint of cost, electroplating is preferable. Furthermore, when the carrier is a resin film, the intermediate layer can be formed by dry plating such as CVD and PDV or wet plating such as electroless plating and dip plating.

又,铬酸盐处理层例如可由电解铬酸盐或浸渍铬酸盐等形成,但由于可提高铬浓度,使极薄铜层自载体的剥离强度变得良好,故而优选为由电解铬酸盐形成。 In addition, the chromate treatment layer can be formed, for example, by electrolytic chromate or immersion chromate, etc., but since the concentration of chromium can be increased, the peel strength of the ultra-thin copper layer from the carrier becomes good, so it is preferably formed by electrolytic chromate. form.

本发明的附载体铜箔的中间层也可在载体上依序积层镍层,及含有含氮的有机化合物、含硫的有机化合物及羧酸中的任一者的有机物层而构成。又,本发明的附载体铜箔的中间层也可在载体上依序积层含有含氮的有机化合物、含硫的有机化合物及羧酸中的任一者的有机物层,及镍层而构成。又,作为该含有含氮的有机化合物、含硫的有机化合物及羧酸中的任一者的有机物,可列举BTA(苯并三唑)、MBT(巯基苯并噻唑)等。 The intermediate layer of the copper foil with a carrier of the present invention may be formed by sequentially laminating a nickel layer and an organic layer containing any one of a nitrogen-containing organic compound, a sulfur-containing organic compound, and a carboxylic acid on a carrier. In addition, the intermediate layer of the copper foil with a carrier of the present invention may be formed by sequentially laminating an organic layer containing any one of a nitrogen-containing organic compound, a sulfur-containing organic compound, and a carboxylic acid, and a nickel layer on a carrier. . Moreover, BTA (benzotriazole), MBT (mercaptobenzothiazole), etc. are mentioned as an organic substance containing any one of this nitrogen-containing organic compound, sulfur-containing organic compound, and carboxylic acid.

又,作为中间层所含的有机物,优选为使用由选自含氮的有机化合物、含硫的有机化合物及羧酸中的1种或2种以上构成者。在含氮的有机化合物、含硫的有机化合物及羧酸之中,含氮的有机化合物包括具有取代基的含氮的有机化合物。作为具体的含氮的有机化合物,优选为使用具有取代基的三唑化合物即1,2,3-苯并三唑、羧基苯并三唑、N',N'-双(苯并三唑基甲基)脲、1H-1,2,4-三唑及3-胺基-1H-1,2,4-三唑等。 Also, as the organic substance contained in the intermediate layer, it is preferable to use one or two or more selected from nitrogen-containing organic compounds, sulfur-containing organic compounds, and carboxylic acids. Among nitrogen-containing organic compounds, sulfur-containing organic compounds, and carboxylic acids, nitrogen-containing organic compounds include nitrogen-containing organic compounds having substituents. As a specific nitrogen-containing organic compound, it is preferable to use triazole compounds with substituents, namely 1,2,3-benzotriazole, carboxybenzotriazole, N',N'-bis(benzotriazolyl Methyl) urea, 1H-1,2,4-triazole and 3-amino-1H-1,2,4-triazole, etc.

含硫的有机化合物优选为使用巯基苯并噻唑、2-巯基苯并噻唑钠、三聚硫氰酸及2-苯并咪唑硫醇等。 As the sulfur-containing organic compound, it is preferable to use mercaptobenzothiazole, 2-mercaptobenzothiazole sodium, thiocyanuric acid, 2-benzimidazole thiol, and the like.

作为羧酸,尤其优选为使用单羧酸,其中优选为使用油酸、亚麻油酸及次亚麻油酸等。 As the carboxylic acid, it is particularly preferable to use a monocarboxylic acid, among which oleic acid, linolenic acid, linolenic acid, and the like are preferably used.

上述有机物较佳为含有厚度为25nm以上且80nm以下,更优选为含有30nm以上且70nm以下。中间层也可含有多种(一种以上)上述有机物。 The above organic matter is preferably contained in a thickness of 25 nm to 80 nm, more preferably 30 nm to 70 nm. The intermediate layer may also contain multiple (or more than one) organic substances mentioned above.

再者,有机物的厚度可以如下方式进行测定。 In addition, the thickness of an organic substance can be measured as follows.

<中间层的有机物厚度> <Thickness of organic matter in the middle layer>

在将附载体铜箔的极薄铜层自载体剥离后,对露出的极薄铜层的中间层侧表面、与露出的载体的中间层侧表面进行XPS测定,而制成深度分布图。然后,可将自极薄铜层的中间层侧表面至碳浓度最初成为3at%以下的深度设为A(nm),将自载体的中间层侧表面至碳浓度最初成为3at%以下的深度设为B(nm),将A与B的合计设为中间层的有机物的厚度(nm)。 After peeling the ultra-thin copper layer of the copper foil with a carrier from the carrier, XPS measurement was performed on the exposed interlayer-side surface of the ultra-thin copper layer and the exposed interlayer-side surface of the carrier to prepare a depth profile. Then, the depth from the intermediate layer side surface of the ultra-thin copper layer to the first carbon concentration of 3 at% or less can be defined as A (nm), and the depth from the intermediate layer side surface of the carrier to the first carbon concentration of 3 at% or less can be defined as A (nm). is B (nm), and the total of A and B is the thickness (nm) of the organic substance of the intermediate layer.

将XPS的运转条件示于以下。 The operating conditions of XPS are shown below.

·装置:XPS测定装置(ULVAC-PHI公司,型号5600MC) Device: XPS measuring device (ULVAC-PHI company, model 5600MC)

·极限真空:3.8×10-7Pa ·Ultimate vacuum: 3.8× 10-7 Pa

·X射线:单色AlKα或非单色MgKα、X射线输出300W、检测面积800μmφ、试样与检测器所成的角度45° X-ray: monochromatic AlKα or non-monochromatic MgKα, X-ray output 300W, detection area 800μmφ, angle between sample and detector 45°

·离子束:离子种类Ar+、加速电压3kV、扫描面积3mm×3mm、溅镀速率2.8nm/min(SiO2换算) Ion beam: ion type Ar + , accelerating voltage 3kV, scanning area 3mm×3mm, sputtering rate 2.8nm/min (SiO 2 conversion)

关于中间层所含的有机物的使用方法,以下对于载体箔上形成中间层的方法进行叙述并说明。在载体上形成中间层是将上述有机物溶解于溶剂中并使载体浸渍于该溶剂中,或者可对于欲形成中间层的面利用淋浴法、喷雾法、滴下法及电沉积法等而进行,无需采用特别限定的方法。此时,溶剂中的有机系溶剂的浓度在上述全部有机物中,优选为浓度0.01g/L~30g/L、液温20~60℃的范围。有机物的浓度并无特别限定,原本浓度较高或较低均无问题。再者,存在如下倾向:有机物的浓度越高,又,载体对溶解上述有机物的溶剂的接触时间越长,中间层的有机物厚度越大。并且,在中间层的有机物厚度较厚的情形时,有抑制Ni向极薄铜层侧扩散的有机物的效果变大的倾向。 About the usage method of the organic substance contained in an intermediate layer, the method of forming an intermediate layer on a carrier foil is described and demonstrated below. Forming the intermediate layer on the carrier is carried out by dissolving the above-mentioned organic substance in a solvent and immersing the carrier in the solvent, or by using a shower method, a spray method, a dripping method, and an electrodeposition method on the surface where the intermediate layer is to be formed. A specifically defined method is used. At this time, the concentration of the organic solvent in the solvent is preferably in the range of a concentration of 0.01 g/L to 30 g/L and a liquid temperature of 20 to 60° C. among all the above-mentioned organic substances. The concentration of the organic matter is not particularly limited, and there is no problem if the concentration is high or low. Furthermore, there is a tendency that the higher the concentration of the organic matter is, the longer the contact time of the carrier with the solvent in which the organic matter is dissolved, and the thickness of the organic matter in the intermediate layer becomes larger. In addition, when the thickness of the organic substance in the intermediate layer is thick, the effect of suppressing the diffusion of Ni to the side of the ultra-thin copper layer tends to be greater.

<极薄铜层> <Extremely thin copper layer>

在中间层上设置极薄铜层。也可在中间层与极薄铜层之间设置其他层。极薄铜层可通过利用硫酸铜、焦磷酸铜、胺基磺酸铜、氰化铜等的电解浴的电镀而形成,就可在高电流密度下形成铜层的方面而言,优选为硫酸铜浴。极薄铜层的厚度并无特别限制,通常薄于载体,例如为12μm以下。典型为0.5~12μm,更典型为1~5μm,进而更典型为1.5~5μm,进而更典型为2~5μm。再者,极薄铜层也可设置在载体的两面。 An extremely thin copper layer is provided on the intermediate layer. It is also possible to arrange other layers between the intermediate layer and the very thin copper layer. The ultra-thin copper layer can be formed by electroplating using an electrolytic bath such as copper sulfate, copper pyrophosphate, copper sulfamate, copper cyanide, etc., and sulfuric acid is preferable in terms of forming a copper layer at a high current density. copper bath. The thickness of the ultra-thin copper layer is not particularly limited, and is generally thinner than the carrier, for example, less than 12 μm. It is typically 0.5 to 12 μm, more typically 1 to 5 μm, still more typically 1.5 to 5 μm, and still more typically 2 to 5 μm. Furthermore, an extremely thin copper layer can also be provided on both sides of the carrier.

<粗化处理及其它表面处理> <Roughening treatment and other surface treatment>

可以通过在极薄铜层的表面例如为了使和绝缘基板的密合性良好等而实施粗化处理,从而设置粗化处理层。粗化处理例如可以通过利用铜或铜合金形成粗化粒子而进行。粗化处理也可以微细。粗化处理层可以是由选自由铜、镍、钴、磷、钨、砷、钼、铬及锌所组成的群中的任一单质或含有任一种以上的合金构成的层等。又,在利用铜或铜合金形成粗化粒子后,还可以进一步利用镍、钴、铜、锌的单质或合金等进行设置二次粒子或三次粒子的粗化处理。然后,也可以利用镍、钴、铜、锌的单质或合金等形成耐热层及/或防锈层,也可进一步在其表面实施铬酸盐处理、硅烷偶合处理等处理。或者也可以不进行粗化处理而利用镍、钴、铜、锌的单质或合金等形成耐热层或防锈层,进一步在其表面实施铬酸盐处理、硅烷偶合处理等处理。也就是说,可以在粗化处理层的表面形成选自由耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层所组成的群中的一种以上的层,也可以在极薄铜层的表面形成选自由耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层所组成的群中的一种以上的层。再者,上述耐热层、防锈层、铬酸盐处理层、硅烷偶合处理层分别可以形成多层(例如2层以上、3层以上等)。此处所谓的铬酸盐处理层,可以是上述铬酸盐处理层,也可为其他的铬酸盐处理层。 A roughened layer can be provided by roughening the surface of the ultra-thin copper layer, for example, to improve adhesion with an insulating substrate. The roughening treatment can be performed, for example, by forming roughening particles with copper or a copper alloy. Coarsening processing can also be made finer. The roughening treatment layer may be a layer composed of any single substance selected from the group consisting of copper, nickel, cobalt, phosphorus, tungsten, arsenic, molybdenum, chromium, and zinc, or an alloy containing any one or more thereof. In addition, after forming roughened particles with copper or a copper alloy, roughening treatment for providing secondary particles or tertiary particles may be further performed using simple substances or alloys of nickel, cobalt, copper, and zinc. Then, a heat-resistant layer and/or an anti-rust layer may be formed using simple substances or alloys of nickel, cobalt, copper, and zinc, and further treatments such as chromate treatment and silane coupling treatment may be performed on the surface. Alternatively, without roughening treatment, a heat-resistant layer or an anti-rust layer may be formed using nickel, cobalt, copper, zinc, or an alloy, and the surface may be further treated with chromate treatment, silane coupling treatment, or the like. That is to say, one or more layers selected from the group consisting of a heat-resistant layer, an antirust layer, a chromate treatment layer, and a silane coupling treatment layer may be formed on the surface of the roughening treatment layer. One or more layers selected from the group consisting of a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a silane coupling-treated layer are formed on the surface of the copper layer. In addition, the above-mentioned heat-resistant layer, rust-proof layer, chromate-treated layer, and silane-coupling-treated layer may each be formed in multiple layers (for example, two or more layers, three or more layers, etc.). The so-called chromate treatment layer here may be the above-mentioned chromate treatment layer or other chromate treatment layers.

再者,上述硅烷偶合处理层,在上述本申请发明的另一方面的附载体铜箔的制造方法中,如上所述为必要的构成要件,又,该本申请发明的另一方面的附载体铜箔的制造方法是包含下述加热处理步骤者:对于依序具备有载体、中间层、极薄铜层、表面处理层的附载体铜箔,将到达加热温度为止的升温速度设为超过50℃/小时,然后在100℃~220℃进行1小时~8小时的加热处理。 In addition, the above-mentioned silane coupling treatment layer is an essential component as described above in the manufacturing method of the copper foil with a carrier according to another aspect of the invention of the present application. The manufacturing method of copper foil is one that includes the following heat treatment step: For copper foil with a carrier sequentially equipped with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer, the temperature increase rate until reaching the heating temperature is set to exceed 50 °C/hour, and then perform heat treatment at 100°C to 220°C for 1 hour to 8 hours.

作为耐热层、防锈层,可使用公知的耐热层、防锈层。例如,耐热层及/或防锈层也可为含有选自镍、锌、锡、钴、钼、铜、钨、磷、砷、铬、钒、钛、铝、金、银、铂族元素、铁、钽的群中的一种以上的元素的层,也可为由选自镍、锌、锡、钴、钼、铜、钨、磷、砷、铬、钒、钛、铝、金、银、铂族元素、铁、钽的群中的一种以上的元素构成的金属层或合金层。又,耐热层及/或防锈层也可含有包含选自镍、锌、锡、钴、钼、铜、钨、磷、砷、铬、钒、钛、铝、金、银、铂族元素、铁、钽的群中的一种以上的元素的氧化物、氮化物、硅化物。又,耐热层及/或防锈层也可为含有镍-锌合金的层。又,耐热层及/或防锈层也可为镍-锌合金层。上述镍-锌合金层可为除不可避免的杂质以外,含有镍50wt%~99wt%、锌50wt%~1wt%者。上述镍-锌合金层的锌及镍的合计附着量为5~1000mg/m2,优选为10~500mg/m2,优选也可为20~100mg/m2。又,上述含有镍-锌合金的层或上述镍-锌合金层的镍附着量与锌附着量之比(=镍的附着量/锌的附着量)优选为1.5~10。又,上述含有镍-锌合金的层或上述镍-锌合金层的镍附着量优选为0.5mg/m2~500mg/m2,更优选为1mg/m2~50mg/m2。在耐热层及/或防锈层为含有镍-锌合金的层的情形时,通孔(throughhole)或通路孔(viahole)等的内壁部与除胶渣(desmear)液接触时铜箔与树脂基板的界面难以被除胶渣液腐蚀,铜箔与树脂基板的密合性会提升。 As the heat-resistant layer and the rust-proof layer, known heat-resistant layers and rust-proof layers can be used. For example, the heat-resistant layer and/or rust-proof layer may also contain elements selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, and platinum group elements. , iron, tantalum group of more than one element layer, can also be selected from nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, A metal layer or an alloy layer composed of one or more elements in the group of silver, platinum group elements, iron, and tantalum. In addition, the heat-resistant layer and/or rust-proof layer may also contain elements selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, and platinum group elements. Oxides, nitrides, and silicides of one or more elements in the group of , iron, and tantalum. In addition, the heat-resistant layer and/or the rust-proof layer may be a layer containing a nickel-zinc alloy. Also, the heat-resistant layer and/or the rust-proof layer may be a nickel-zinc alloy layer. The above-mentioned nickel-zinc alloy layer may contain 50 wt % to 99 wt % of nickel and 50 wt % to 1 wt % of zinc in addition to unavoidable impurities. The total deposition amount of zinc and nickel in the nickel-zinc alloy layer is 5 to 1000 mg/m 2 , preferably 10 to 500 mg/m 2 , preferably 20 to 100 mg/m 2 . In addition, it is preferable that the nickel-zinc alloy-containing layer or the nickel-zinc alloy layer has a ratio of nickel adhesion to zinc adhesion (=nickel adhesion/zinc adhesion) of 1.5-10. Also, the nickel deposition amount of the layer containing nickel-zinc alloy or the nickel-zinc alloy layer is preferably 0.5 mg/m 2 to 500 mg/m 2 , more preferably 1 mg/m 2 to 50 mg/m 2 . When the heat-resistant layer and/or rust-proof layer is a layer containing nickel-zinc alloy, when the inner wall of the through hole (throughhole) or via hole (viahole) comes into contact with the desmear (desmear) liquid, the copper foil and The interface of the resin substrate is difficult to be corroded by the desmear solution, and the adhesion between the copper foil and the resin substrate will be improved.

例如耐热层及/或防锈层可为将附着量为1mg/m2~100mg/m2、优选为5mg/m2~50mg/m2的镍或镍合金层,与附着量为1mg/m2~80mg/m2、优选为5mg/m2~40mg/m2的锡层依序积层而成,上述镍合金层也可由镍-钼、镍-锌、镍-钼-钴中的任一种构成。又,耐热层及/或防锈层的镍或镍合金与锡的合计附着量优选为2mg/m2~150mg/m2,更优选为10mg/m2~70mg/m2。又,耐热层及/或防锈层优选为[镍或镍合金中的镍附着量]/[锡附着量]=0.25~10,更优选为0.33~3。若使用该耐热层及/或防锈层,则将附载体铜箔加工成印刷配线板以后的电路的剥离强度、该剥离强度的耐化学品性劣化率等会变得良好。 For example, the heat-resistant layer and/or the rust-proof layer can be a nickel or nickel alloy layer with an adhesion amount of 1 mg/m 2 to 100 mg/m 2 , preferably 5 mg/m 2 to 50 mg/m 2 , and an adhesion amount of 1 mg/m 2 m 2 to 80mg/m 2 , preferably 5mg/m 2 to 40mg/m 2 tin layers are sequentially laminated. The nickel alloy layer can also be made of nickel-molybdenum, nickel-zinc, nickel-molybdenum-cobalt any composition. Also, the total adhesion amount of nickel or nickel alloy and tin in the heat-resistant layer and/or rust-proof layer is preferably 2 mg/m 2 to 150 mg/m 2 , more preferably 10 mg/m 2 to 70 mg/m 2 . In addition, the heat-resistant layer and/or the antirust layer are preferably [Ni deposition amount in nickel or nickel alloy]/[Sn deposition amount]=0.25-10, more preferably 0.33-3. Using the heat-resistant layer and/or the rust-proof layer will improve the peel strength of the circuit after the copper foil with a carrier is processed into a printed wiring board, the chemical resistance deterioration rate of the peel strength, and the like.

再者,硅烷偶合处理所使用的硅烷偶合剂可使用公知的硅烷偶合剂,例如可使用胺系硅烷偶合剂或环氧系硅烷偶合剂、巯基系硅烷偶合剂。又,硅烷偶合剂也可使用乙烯基三甲氧基硅烷、乙烯基苯基三甲氧基硅烷、γ-甲基丙烯氧基丙基三甲氧基硅烷(γ-methacryloxypropyltrimethoxysilane)、γ-环氧丙氧基丙基三甲氧基硅烷(γ-glycidoxypropyltrimethoxysilane)、4-环氧丙基丁基三甲氧基硅烷、γ-胺基丙基三乙氧基硅烷、N-β(胺基乙基)γ-胺基丙基三甲氧基硅烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基硅烷、咪唑硅烷、三嗪硅烷、γ-巯基丙基三甲氧基硅烷等。 In addition, a well-known silane coupling agent can be used for the silane coupling agent used for a silane coupling process, For example, an amine type silane coupling agent, an epoxy type silane coupling agent, and a mercapto type silane coupling agent can be used. In addition, the silane coupling agent can also use vinyltrimethoxysilane, vinylphenyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane (γ-methacryloxypropyltrimethoxysilane), γ-glycidoxy Propyltrimethoxysilane (γ-glycidoxypropyltrimethoxysilane), 4-epoxypropylbutyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-β(aminoethyl)γ-amino Propyltrimethoxysilane, N-3-(4-(3-aminopropoxy)butoxy)propyl-3-aminopropyltrimethoxysilane, imidazole silane, triazine silane, γ- Mercaptopropyltrimethoxysilane, etc.

上述硅烷偶合处理层也可使用环氧系硅烷、胺系硅烷、甲基丙烯氧基系硅烷、巯基系硅烷等硅烷偶合剂等而形成。再者,此种硅烷偶合剂也可将两种以上混合使用。其中,优选为使用胺系硅烷偶合剂或环氧系硅烷偶合剂所形成者。 The above-mentioned silane coupling treatment layer can also be formed using silane coupling agents such as epoxy-based silanes, amine-based silanes, methacryloxy-based silanes, and mercapto-based silanes. In addition, such a silane coupling agent can also be used in mixture of 2 or more types. Among them, those formed using an amine-based silane coupling agent or an epoxy-based silane coupling agent are preferable.

此处所谓的胺系硅烷偶合剂也可为选自由如下物质所组成的群者:N-(2-胺基乙基)-3-胺基丙基三甲氧基硅烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基硅烷、3-胺基丙基三乙氧基硅烷、双(2-羟基乙基)-3-胺基丙基三乙氧基硅烷、胺基丙基三甲氧基硅烷、N-甲基胺基丙基三甲氧基硅烷、N-苯基胺基丙基三甲氧基硅烷、N-(3-丙烯氧基-2-羟基丙基)-3-胺基丙基三乙氧基硅烷、4-胺基丁基三乙氧基硅烷、(胺基乙基胺基甲基)苯乙基三甲氧基硅烷、N-(2-胺基乙基-3-胺基丙基)三甲氧基硅烷、N-(2-胺基乙基-3-胺基丙基)三(2-乙基己氧基)硅烷、6-(胺基己基胺基丙基)三甲氧基硅烷、胺基苯基三甲氧基硅烷、3-(1-胺基丙氧基)-3,3-二甲基-1-丙烯基三甲氧基硅烷、3-胺基丙基三(甲氧基乙氧基乙氧基)硅烷、3-胺基丙基三乙氧基硅烷、3-胺基丙基三甲氧基硅烷、ω-胺基十一烷基三甲氧基硅烷、3-(2-N-苄基胺基乙基胺基丙基)三甲氧基硅烷、双(2-羟基乙基)-3-胺基丙基三乙氧基硅烷、(N,N-二乙基-3-胺基丙基)三甲氧基硅烷、(N,N-二甲基-3-胺基丙基)三甲氧基硅烷、N-甲基胺基丙基三甲氧基硅烷、N-苯基胺基丙基三甲氧基硅烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基硅烷、γ-胺基丙基三乙氧基硅烷、N-β(胺基乙基)γ-胺基丙基三甲氧基硅烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基硅烷。 The so-called amine silane coupling agent here can also be selected from the group consisting of the following substances: N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, 3-(N-phenyl Vinylmethyl-2-aminoethylamino)propyltrimethoxysilane, 3-aminopropyltriethoxysilane, bis(2-hydroxyethyl)-3-aminopropyltriethyl Oxysilane, Aminopropyltrimethoxysilane, N-Methylaminopropyltrimethoxysilane, N-Phenylaminopropyltrimethoxysilane, N-(3-Propyloxy-2- Hydroxypropyl)-3-aminopropyltriethoxysilane, 4-aminobutyltriethoxysilane, (aminoethylaminomethyl)phenethyltrimethoxysilane, N-( 2-aminoethyl-3-aminopropyl)trimethoxysilane, N-(2-aminoethyl-3-aminopropyl)tris(2-ethylhexyloxy)silane, 6- (Aminohexylaminopropyl)trimethoxysilane, Aminophenyltrimethoxysilane, 3-(1-aminopropoxy)-3,3-dimethyl-1-propenyltrimethoxy Silane, 3-aminopropyltri(methoxyethoxyethoxy)silane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, ω-aminodeca Monoalkyltrimethoxysilane, 3-(2-N-benzylaminoethylaminopropyl)trimethoxysilane, bis(2-hydroxyethyl)-3-aminopropyltriethoxy Silane, (N,N-diethyl-3-aminopropyl)trimethoxysilane, (N,N-dimethyl-3-aminopropyl)trimethoxysilane, N-methylamino Propyltrimethoxysilane, N-phenylaminopropyltrimethoxysilane, 3-(N-styrylmethyl-2-aminoethylamino)propyltrimethoxysilane, γ-amine N-3-(4-(3-aminopropoxy)butoxy)propyl -3-Aminopropyltrimethoxysilane.

硅烷偶合处理层较理想为以硅原子换算设为0.05mg/m2~200mg/m2、优选为0.15mg/m2~20mg/m2、优选为0.3mg/m2~2.0mg/m2的范围。在上述范围的情形时,可使基材树脂与表面处理铜箔的密合性更加提升。 The silane coupling treatment layer is preferably 0.05 mg/m 2 to 200 mg/m 2 in terms of silicon atoms, preferably 0.15 mg/m 2 to 20 mg/m 2 , preferably 0.3 mg/m 2 to 2.0 mg/m 2 range. In the case of the said range, the adhesiveness of a base resin and a surface-treated copper foil can be further improved.

又,可对极薄铜层、粗化处理层、耐热层、防锈层、硅烷偶合处理层或铬酸盐处理层的表面进行下述专利所记载的表面处理:国际公开编号WO2008/053878、日本特开2008-111169号、日本专利第5024930号、国际公开编号WO2006/028207、日本专利第4828427号、国际公开编号WO2006/134868、日本专利第5046927号、国际公开编号WO2007/105635、日本专利第5180815号、日本特开2013-19056号。 In addition, the surface treatment described in the following patent can be carried out on the surface of the ultra-thin copper layer, roughened layer, heat-resistant layer, anti-rust layer, silane coupling layer or chromate layer: International Publication No. WO2008/053878 , Japanese Patent Application No. 2008-111169, Japanese Patent No. 5024930, International Publication No. WO2006/028207, Japanese Patent No. 4828427, International Publication No. WO2006/134868, Japanese Patent No. 5046927, International Publication No. WO2007/105635, Japanese Patent No. 5180815, Japanese Patent Laid-Open No. 2013-19056.

再者,也可在极薄铜层的一表面或两表面设置选自由粗化处理层、耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层所组成的群中的一种以上的层,也可设置表面处理层。表面处理层也可为选自由粗化处理层、耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层所组成的群中的一种以上的层。 Furthermore, one or both surfaces of the ultra-thin copper layer may be provided with one selected from the group consisting of a roughening treatment layer, a heat-resistant layer, an antirust layer, a chromate treatment layer, and a silane coupling treatment layer. The above layer may also be provided with a surface treatment layer. The surface treatment layer may be one or more layers selected from the group consisting of a roughening treatment layer, a heat-resistant layer, an antirust layer, a chromate treatment layer, and a silane coupling treatment layer.

又,附载体铜箔也可在上述粗化处理层上具备一层以上选自由耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层所组成的群中的层。 In addition, the copper foil with a carrier may include one or more layers selected from the group consisting of a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a silane coupling-treated layer on the roughened layer.

又,在上述粗化处理层上也可具备耐热层、防锈层,在上述耐热层、防锈层上也可具备铬酸盐处理层,在上述铬酸盐处理层上也可具备硅烷偶合处理层。 Also, a heat-resistant layer and a rust-proof layer may be provided on the above-mentioned roughening treatment layer, a chromate treatment layer may be provided on the above-mentioned heat-resistant layer and the rust-proof layer, and a chromate treatment layer may be provided on the above-mentioned chromate treatment layer. Silane coupling treatment layer.

又,上述附载体铜箔也可在上述极薄铜层上,或上述粗化处理层上,或上述耐热层、防锈层或铬酸盐处理层或硅烷偶合处理层上具备树脂层。上述树脂层也可为绝缘树脂层。 In addition, the copper foil with a carrier may be provided with a resin layer on the ultra-thin copper layer, the roughened layer, or the heat-resistant layer, rust-proof layer, chromate-treated layer, or silane-coupling-treated layer. The aforementioned resin layer may also be an insulating resin layer.

又,附载体铜箔可在载体上具备粗化处理层,也可在载体上具备一层以上选自由粗化处理层、耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层所组成的群中的层。上述粗化处理层、耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层可利用公知的方法而设置,也可通过本申请说明书、权利要求、图式中记载的方法而设置。在将载体自具有上述粗化处理层等的表面侧积层在树脂基板等支持体的情形时,在载体上设置一层以上选自上述粗化处理层、耐热层、防锈层、铬酸盐处理层、硅烷偶合处理层中的层的情况具有载体与支持体不易剥离的优点。 In addition, the copper foil with a carrier may have a roughening treatment layer on the carrier, and may also have one or more layers selected from the roughening treatment layer, heat-resistant layer, anti-rust layer, chromate treatment layer and silane coupling treatment layer on the support. Layers in the composed group. The above-mentioned roughening treatment layer, heat-resistant layer, antirust layer, chromate treatment layer and silane coupling treatment layer can be provided by known methods, and can also be provided by the methods described in the specification, claims, and drawings of this application. . When the carrier is laminated on a support such as a resin substrate from the surface side having the above-mentioned roughening treatment layer, etc., one or more layers selected from the above-mentioned roughening treatment layer, heat-resistant layer, rust-proof layer, chromium In the case of the salt-treated layer and the silane-coupling-treated layer, there is an advantage that the carrier and the support are not easily peeled off.

上述树脂层可为接着剂,也可为接着用半硬化状态(B阶段状态)的绝缘树脂层。半硬化状态(B阶段状态)包含下述状态:即便用手指触摸其表面也无粘着感,可将该绝缘树脂层重迭而保管,若进一步进行加热处理,则会引起硬化反应。 The above-mentioned resin layer may be an adhesive, or may be an insulating resin layer in a semi-cured state (B-stage state) for adhesion. The semi-cured state (B-stage state) includes a state in which the surface does not feel sticky even when touched with a finger, and the insulating resin layer can be stacked and stored, and further heat treatment causes a curing reaction.

又,上述树脂层可含有热硬化性树脂,也可为热塑性树脂。又,上述树脂层也可含有热塑性树脂。上述树脂层也可含有公知的树脂、树脂硬化剂、化合物、硬化促进剂、介电体、反应催化剂、交联剂、聚合物、预浸体、骨架材料等。又,上述树脂层例如可使用如下文献中所记载的物质(树脂、树脂硬化剂、化合物、硬化促进剂、介电体、反应催化剂、交联剂、聚合物、预浸体、骨架材料等)及/或树脂层的形成方法、形成装置而形成,该文献是国际公开编号WO2008/004399号、国际公开编号WO2008/053878、国际公开编号WO2009/084533、日本特开平11-5828号、日本特开平11-140281号、日本专利第3184485号、国际公开编号WO97/02728、日本专利第3676375号、日本特开2000-43188号、日本专利第3612594号、日本特开2002-179772号、日本特开2002-359444号、日本特开2003-304068号、日本专利第3992225号、日本特开2003-249739号、日本专利第4136509号、日本特开2004-82687号、日本专利第4025177号、日本特开2004-349654号、日本专利第4286060号、日本特开2005-262506号、日本专利第4570070号、日本特开2005-53218号、日本专利第3949676号、日本专利第4178415号、国际公开编号WO2004/005588、日本特开2006-257153号、日本特开2007-326923号、日本特开2008-111169号、日本专利第5024930号、国际公开编号WO2006/028207、日本专利第4828427号、日本特开2009-67029号、国际公开编号WO2006/134868、日本专利第5046927号、日本特开2009-173017号、国际公开编号WO2007/105635、日本专利第5180815号、国际公开编号WO2008/114858、国际公开编号WO2009/008471、日本特开2011-14727号、国际公开编号WO2009/001850、国际公开编号WO2009/145179、国际公开编号WO2011/068157、日本特开2013-19056号。 In addition, the above-mentioned resin layer may contain a thermosetting resin, or may be a thermoplastic resin. Moreover, the said resin layer may contain a thermoplastic resin. The resin layer may contain known resins, resin hardeners, compounds, hardening accelerators, dielectrics, reaction catalysts, crosslinking agents, polymers, prepregs, framework materials, and the like. In addition, for the resin layer, for example, those described in the following documents (resin, resin curing agent, compound, curing accelerator, dielectric, reaction catalyst, crosslinking agent, polymer, prepreg, frame material, etc.) can be used. And/or the forming method and forming device of the resin layer are formed. 11-140281, Japanese Patent No. 3184485, International Publication No. WO97/02728, Japanese Patent No. 3676375, Japanese Patent Laid-Open No. 2000-43188, Japanese Patent No. 3612594, Japanese Patent Laid-Open No. 2002-179772, Japanese Patent Laid-Open No. 2002 -359444, JP 2003-304068, JP 3992225, JP 2003-249739, JP 4136509, JP 2004-82687, JP 4025177, JP 2004 -349654, Japanese Patent No. 4286060, Japanese Patent Laid-Open No. 2005-262506, Japanese Patent No. 4570070, Japanese Patent Laid-Open No. 2005-53218, Japanese Patent No. 3949676, Japanese Patent No. 4178415, International Publication No. WO2004/005588 , JP 2006-257153, JP 2007-326923, JP 2008-111169, JP 5024930, International Publication No. WO2006/028207, JP 4828427, JP 2009-67029 No., International Publication No. WO2006/134868, Japanese Patent No. 5046927, Japanese Patent Application No. 2009-173017, International Publication No. WO2007/105635, Japanese Patent No. 5180815, International Publication No. WO2008/114858, International Publication No. WO2009/008471, Japanese Patent Laid-Open No. 2011-14727, International Publication No. WO2009/001850, International Publication No. WO2009/145179, International Publication No. WO2011/068157, Japanese Patent Laid-Open No. 2013-19056.

又,上述树脂层的种类并无特别限定,作为优选为,例如可列举含有选自如下成分的群中的一种以上的树脂:环氧树脂、聚酰亚胺树脂、多官能性氰酸酯化合物、顺丁烯二酰亚胺化合物、聚顺丁烯二酰亚胺化合物、顺丁烯二酰亚胺系树脂、芳香族顺丁烯二酰亚胺树脂、聚乙烯醇缩乙醛树脂、胺酯(urethane)树脂、聚醚砜(也称为polyethersulphone、polyethersulfone)、聚醚砜(也称为polyethersulphone、polyethersulfone)树脂、芳香族聚酰胺树脂、芳香族聚酰胺树脂聚合物、橡胶性树脂、聚胺、芳香族聚胺、聚酰胺酰亚胺树脂、橡胶变性环氧树脂、苯氧基树脂、羧基改质丙烯腈-丁二烯树脂、聚苯醚、双顺丁烯二酰亚胺三嗪树脂、热硬化性聚苯醚树脂、氰酸酯酯系树脂、羧酸的酸酐、多元羧酸的酸酐、具有可交联的官能基的线状聚合物、聚苯醚树脂、2,2-双(4-氰酸酯基苯基)丙烷、含磷的酚化合物、环烷酸锰、2,2-双(4-环氧丙基苯基)丙烷、聚苯醚-氰酸酯系树脂、硅氧烷改质聚酰胺酰亚胺树脂、氰酯树脂、膦腈系树脂、橡胶变性聚酰胺酰亚胺树脂、异戊二烯、氢化型聚丁二烯、聚乙烯丁醛、苯氧基、高分子环氧树脂、芳香族聚酰胺、氟树脂、双酚、嵌段共聚聚酰亚胺树脂及氰酯树脂。 Also, the type of the above-mentioned resin layer is not particularly limited, and as preferable, for example, a resin containing one or more selected from the group of the following components: epoxy resin, polyimide resin, polyfunctional cyanate compound, maleimide compound, polymaleimide compound, maleimide resin, aromatic maleimide resin, polyvinyl acetal resin, Urethane resin, polyethersulfone (also known as polyethersulphone, polyethersulfone), polyethersulfone (also known as polyethersulphone, polyethersulfone) resin, aromatic polyamide resin, aromatic polyamide resin polymer, rubbery resin, Polyamine, aromatic polyamine, polyamide-imide resin, rubber-modified epoxy resin, phenoxy resin, carboxy-modified acrylonitrile-butadiene resin, polyphenylene ether, bismaleimide three Oxyzine resins, thermosetting polyphenylene ether resins, cyanate ester resins, anhydrides of carboxylic acids, anhydrides of polycarboxylic acids, linear polymers with crosslinkable functional groups, polyphenylene ether resins, 2,2 - Bis(4-cyanatophenyl)propane, phosphorus-containing phenolic compounds, manganese naphthenate, 2,2-bis(4-epoxypropylphenyl)propane, polyphenylene ether-cyanate Resin, siloxane-modified polyamide-imide resin, cyanoester resin, phosphazene-based resin, rubber-modified polyamide-imide resin, isoprene, hydrogenated polybutadiene, polyvinyl butyral, benzene Oxygen, polymer epoxy resin, aromatic polyamide, fluororesin, bisphenol, block copolymerized polyimide resin and cyanate resin.

又,上述环氧树脂系分子内具有2个以上环氧基者,并且只要为可用于电性、电子材料用途,则可尤其无问题地使用。又,上述环氧树脂优选为使用分子内具有2个以上环氧丙基的化合物进行环氧化而成的环氧树脂。又,可将选自由如下成分所组成的群中的1种或2种以上混合而使用:双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、双酚AD型环氧树脂、酚醛清漆型环氧树脂、甲酚酚醛清漆型环氧树脂、脂环式环氧树脂、溴化(brominated)环氧树脂、酚系酚醛清漆型环氧树脂、萘型环氧树脂、溴化双酚A型环氧树脂、邻甲酚酚醛清漆型环氧树脂、橡胶改质双酚A型环氧树脂、环氧丙胺型环氧树脂、异氰尿酸三环氧丙酯、N,N-二环氧丙基苯胺等环氧丙胺化合物、四氢邻苯二甲酸二环氧丙酯等环氧丙酯化合物、含磷的环氧树脂、联苯型环氧树脂、联苯酚醛清漆型环氧树脂、三羟基苯基甲烷型环氧树脂、四苯基乙烷型环氧树脂,或者可使用上述环氧树脂的氢化体或卤化体。 Moreover, the above-mentioned epoxy resin type has two or more epoxy groups in a molecule|numerator, and if it can be used for electrical and electronic materials, it can use especially without a problem. Moreover, it is preferable that the said epoxy resin is an epoxy resin obtained by epoxidizing using the compound which has 2 or more glycidyl groups in a molecule|numerator. In addition, one or two or more selected from the group consisting of the following components can be used in combination: bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, bisphenol AD type epoxy resin, novolak type epoxy resin, cresol novolac type epoxy resin, alicyclic epoxy resin, brominated (brominated) epoxy resin, phenolic novolak type epoxy resin, naphthalene type ring Oxygen resin, brominated bisphenol A type epoxy resin, o-cresol novolak type epoxy resin, rubber modified bisphenol A type epoxy resin, epoxypropylamine type epoxy resin, triglycidyl isocyanurate , N,N-Diglycidylaniline and other glycidylamine compounds, tetrahydrophthalate and other glycidyl ester compounds, phosphorus-containing epoxy resins, biphenyl epoxy resins, biphenyl epoxy resins, A phenol novolak type epoxy resin, a trishydroxyphenylmethane type epoxy resin, a tetraphenylethane type epoxy resin, or hydrogenated or halogenated forms of the above epoxy resins may be used.

可使用公知的含有磷的环氧树脂作为上述含磷的环氧树脂。又,上述含磷的环氧树脂优选为例如分子内具备2个以上环氧基的以自9,10-二氢-9-氧杂-10-磷杂菲-10-氧化物的衍生物的形式获得的环氧树脂。 A known phosphorus-containing epoxy resin can be used as the above-mentioned phosphorus-containing epoxy resin. In addition, the above-mentioned phosphorus-containing epoxy resin is preferably, for example, a derivative derived from 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide having two or more epoxy groups in the molecule. form of epoxy resin.

(树脂层含有介电体(介电体填料)的情况) (When the resin layer contains a dielectric (dielectric filler))

上述树脂层也可含有介电体(介电体填料)。 The resin layer may contain a dielectric (dielectric filler).

在在上述任一种树脂层或树脂组成物中含有介电体(介电体填料)的情形时,可用于形成电容器层的用途,而增大电容器电路的电容。该介电体(介电体填料)是使用BaTiO3、SrTiO3、Pb(Zr-Ti)O3(通称PZT)、PbLaTiO3·PbLaZrO(通称PLZT)、SrBi2Ta2O9(通称SBT)等具有钙钛矿(Perovskite)结构的复合氧化物的介电体粉。 When a dielectric (dielectric filler) is contained in any of the above-mentioned resin layers or resin compositions, it can be used to form a capacitor layer to increase the capacitance of a capacitor circuit. The dielectric (dielectric filler) is made of BaTiO 3 , SrTiO 3 , Pb(Zr-Ti)O 3 (commonly called PZT), PbLaTiO 3 PbLaZrO (commonly called PLZT), SrBi 2 Ta 2 O 9 (commonly called SBT) Dielectric powders such as composite oxides having a perovskite (Perovskite) structure.

介电体(介电体填料)也可为粉状。在介电体(介电体填料)为粉状的情形时,该介电体(介电体填料)的粉体特性优选为粒径为0.01μm~3.0μm、优选为0.02μm~2.0μm的范围。再者,利用扫描型电子显微镜(SEM)对介电体拍摄照片,在在该照片上的介电体的粒子上引直线的情形时,将横切介电体的粒子的直线长度为最长的部分的介电体的粒子长度设为该介电体的粒子直径。并且,将测定视野内的介电体的粒子直径的平均值设为介电体的粒径。 The dielectric (dielectric filler) may also be powdery. When the dielectric (dielectric filler) is in powder form, the powder properties of the dielectric (dielectric filler) are preferably 0.01 μm to 3.0 μm in particle size, preferably 0.02 μm to 2.0 μm. scope. Furthermore, when using a scanning electron microscope (SEM) to take a photo of the dielectric body, when drawing a straight line on the particles of the dielectric body on the photo, the length of the straight line that crosses the particles of the dielectric body is the longest Particle length of the dielectric body is defined as the particle diameter of the dielectric body. And, the average value of the particle diameters of the dielectric body within the measurement field of view was defined as the particle size of the dielectric body.

使上述树脂层中所含的树脂及/或树脂组成物及/或化合物溶解于例如甲基乙基酮(MEK)、环戊酮、二甲基甲酰胺、二甲基乙酰胺、N-甲基吡咯啶酮、甲苯、甲醇、乙醇、丙二醇单甲醚、二甲基甲酰胺、二甲基乙酰胺、环己酮、乙基溶纤素、N-甲基-2-吡咯啶酮、N,N-二甲基乙酰胺、N,N-二甲基甲酰胺等溶剂中而制成树脂液(树脂清漆),通过例如辊式涂布法等将其涂布于上述附载体铜箔的极薄铜层侧表面,继而视需要进行加热干燥,去除溶剂而成为B阶段状态。干燥例如只要使用热风干燥炉即可,干燥温度只要为100~250℃、优选为130~200℃即可。可使用溶剂溶解上述树脂层的组成物,而制成树脂固形物成分3wt%~70wt%、优选为3wt%~60wt%、优选为10wt%~40wt%、更优选为25wt%~40wt%的树脂液。再者,就氛围的观点而言,现阶段最佳为使用甲基乙基酮与环戊酮的混合溶剂进行溶解。再者,溶剂优选为使用沸点为50℃~200℃的范围的溶剂。 Dissolve the resin and/or resin composition and/or compound contained in the above resin layer in, for example, methyl ethyl ketone (MEK), cyclopentanone, dimethylformamide, dimethylacetamide, N-formaldehyde Pyrrolidone, toluene, methanol, ethanol, propylene glycol monomethyl ether, dimethylformamide, dimethylacetamide, cyclohexanone, ethyl cellosolve, N-methyl-2-pyrrolidone, N , N-dimethylacetamide, N,N-dimethylformamide and other solvents to make a resin solution (resin varnish), and apply it to the above-mentioned copper foil with a carrier by, for example, a roll coating method. The surface on the side of the ultra-thin copper layer is then heat-dried if necessary to remove the solvent and become a B-stage state. For drying, for example, a hot air drying oven may be used, and the drying temperature may be 100 to 250°C, preferably 130 to 200°C. Solvents can be used to dissolve the composition of the above resin layer to make a resin with a resin solid content of 3wt% to 70wt%, preferably 3wt% to 60wt%, preferably 10wt% to 40wt%, more preferably 25wt% to 40wt%. liquid. Furthermore, from the viewpoint of atmosphere, it is best to dissolve using a mixed solvent of methyl ethyl ketone and cyclopentanone at this stage. In addition, as a solvent, it is preferable to use the solvent whose boiling point is the range of 50 degreeC - 200 degreeC.

又,上述树脂层优选为依据MIL标准中的MIL-P-13949G进行测定时的树脂流动量为5%~35%的范围的半硬化树脂膜。 Moreover, it is preferable that the said resin layer is a semi-hardened resin film whose resin flow rate when measured based on MIL-P-13949G in MIL standard is the range of 5 % - 35 %.

在本申请说明书中,所谓树脂流动量,是指依据MIL标准中的MIL-P-13949G,自使树脂厚度为55μm的附树脂的表面处理铜箔采取4片10cm见方试样,在使该4片试样重迭的状态(积层体)下,在压制温度171℃、压制压力14kgf/cm2、压制时间10分钟的条件下进行贴合,根据测定此时的树脂流出重量所得的结果,基于数1而算出的值。 In this application specification, the so-called resin flow rate refers to the MIL-P-13949G in the MIL standard, taking 4 pieces of 10 cm square samples from the surface-treated copper foil with a resin thickness of 55 μm, and making the 4 In the state where the sheet samples are overlapped (laminated body), the lamination was carried out under the conditions of a pressing temperature of 171°C, a pressing pressure of 14kgf/cm 2 , and a pressing time of 10 minutes. According to the results obtained by measuring the resin outflow weight at this time, Value calculated based on number 1.

[数学式1] [mathematical formula 1]

具备上述树脂层的表面处理铜箔(附树脂的表面处理铜箔)是以如下方面使用:将该树脂层与基材重迭后将整体热压接而使该树脂层热硬化,继而在表面处理铜箔为附载体铜箔的极薄铜层的情形时,剥离载体而露出极薄铜层(当然露出的是该极薄铜层的中间层侧表面),自与表面处理铜箔的粗化处理侧相反之侧的表面形成特定配线图案。 The surface-treated copper foil (surface-treated copper foil with resin) provided with the above-mentioned resin layer is used in such a way that the resin layer is laminated on the base material, and the whole body is thermocompression bonded to thermally harden the resin layer, and then the resin layer is coated on the surface. When the copper foil is an ultra-thin copper layer with a carrier copper foil, the carrier is peeled off to expose the ultra-thin copper layer (of course, the surface on the middle layer side of the ultra-thin copper layer is exposed), which is different from the roughness of the surface-treated copper foil. A specific wiring pattern is formed on the surface opposite to the chemically treated side.

若使用该附树脂的表面处理铜箔,则可减少制造多层印刷配线基板时的预浸体材料的使用片数。而且,即便将树脂层的厚度设为可确保层间绝缘的厚度,或完全不使用预浸体材料,也可制造覆铜积层板。又,此时,也可将绝缘树脂底漆涂布于基材的表面而进一步改善表面的平滑性。 When this resin-attached surface-treated copper foil is used, the number of sheets of prepreg material used at the time of manufacturing a multilayer printed wiring board can be reduced. Furthermore, it is possible to manufacture a copper-clad laminate even if the thickness of the resin layer is set to a thickness that ensures interlaminar insulation, or a prepreg material is not used at all. In addition, at this time, an insulating resin primer may be applied to the surface of the substrate to further improve the smoothness of the surface.

再者,在不使用预浸体材料的情形时,可节约预浸体材料的材料成本,又,积层步骤也变得简略,因此在经济上较为有利,而且有如下优点:仅制造预浸体材料的厚度程度的多层印刷配线基板的厚度变薄,而可制造1层的厚度为100μm以下的极薄的多层印刷配线基板。 In addition, when the prepreg material is not used, the material cost of the prepreg material can be saved, and the lamination process is simplified, so it is economically advantageous, and there are advantages in that only the prepreg The thickness of the multilayer printed wiring board is reduced to about the thickness of the bulk material, and an extremely thin multilayer printed wiring board with a thickness of one layer of 100 μm or less can be produced.

该树脂层的厚度优选为0.1~120μm。 The thickness of the resin layer is preferably 0.1 to 120 μm.

若树脂层的厚度薄于0.1μm,则有如下情况:接着力降低,在不介存预浸体材料将该附树脂的表面处理铜箔积层在具备内层材料的基材上时,难以确保内层材料与电路之间的层间绝缘。另一方面,若树脂层的厚度厚于120μm,则有如下情况:难以在1次涂布步骤中形成目标厚度的树脂层,而需要多余的材料费及步骤数,故而在经济上变得不利。 If the thickness of the resin layer is thinner than 0.1 μm, the adhesive force may decrease, and it is difficult to laminate the surface-treated copper foil with resin on the base material provided with the inner layer material without intervening the prepreg material. Ensure interlayer insulation between the inner layer material and the circuit. On the other hand, if the thickness of the resin layer is thicker than 120 μm, it may be difficult to form the resin layer with the target thickness in one coating step, and unnecessary material cost and number of steps are required, so it becomes economically disadvantageous. .

再者,在将具有树脂层的表面处理铜箔用于制造极薄的多层印刷配线板的情形时,将上述树脂层的厚度设为0.1μm~5μm、更优选为0.5μm~5μm、更优选为1μm~5μm时,可缩小多层印刷配线板的厚度,故而优选。 Furthermore, when using the surface-treated copper foil which has a resin layer for manufacture of an extremely thin multilayer printed wiring board, the thickness of the said resin layer shall be 0.1 micrometer - 5 micrometers, More preferably, it shall be 0.5 micrometer - 5 micrometers, More preferably, when it is 1 micrometer - 5 micrometers, since the thickness of a multilayer printed wiring board can be made small, it is preferable.

进而,通过在印刷配线板上搭载电子零件类,而完成印刷电路板。在本发明中,“印刷配线板”也包括如此搭载有电子零件类的印刷配线板及印刷电路板及印刷基板。 Furthermore, a printed wiring board is completed by mounting electronic components on a printed wiring board. In the present invention, the "printed wiring board" also includes printed wiring boards, printed wiring boards, and printed circuit boards on which electronic components are mounted in this way.

又,可使用该印刷配线板而制作电子机器,可使用搭载有该电子零件类的印刷电路板而制作电子机器,也可使用搭载有该电子零件类的印刷基板而制作电子机器。以下,表示若干使用本发明的附载体铜箔的印刷配线板的制造步骤的例子。 Furthermore, electronic equipment can be produced using the printed wiring board, electronic equipment can be produced using the printed circuit board on which the electronic components are mounted, and electronic equipment can be produced using the printed circuit board on which the electronic components are mounted. Below, some examples of the manufacturing process of the printed wiring board using the copper foil with a carrier of this invention are shown.

本发明的印刷配线板的制造方法的一实施方案包含下述步骤:准备本发明的附载体铜箔与绝缘基板;将上述附载体铜箔与绝缘基板积层;及以使极薄铜层侧与绝缘基板对向的方式将上述附载体铜箔与绝缘基板积层后,经将上述附载体铜箔的载体剥离的步骤而形成覆铜积层板,其后,通过半加成法、改进半加成法、部分加成法及减成法中的任一种方法形成电路。绝缘基板也可设为内层电路入口。 One embodiment of the method of manufacturing a printed wiring board of the present invention includes the following steps: preparing the copper foil with a carrier and the insulating substrate of the present invention; laminating the copper foil with a carrier and the insulating substrate; and making the ultra-thin copper layer After laminating the above-mentioned copper foil with carrier and the insulating substrate in such a way that the side of the carrier-attached copper foil is opposite to the insulating substrate, the carrier of the above-mentioned copper foil with carrier is peeled off to form a copper-clad laminate, and thereafter, by semi-additive method, Improve any one of semi-additive method, partial additive method and subtractive method to form a circuit. The insulating substrate can also be used as the entrance of the inner layer circuit.

在本发明中,所谓半加成法,是指在绝缘基板或铜箔晶种层上进行较薄的无电解镀敷,形成图案后,利用电镀及蚀刻形成导体图案的方法。 In the present invention, the so-called semi-additive method refers to a method in which thin electroless plating is performed on an insulating substrate or a copper foil seed layer to form a pattern, and then a conductive pattern is formed by electroplating and etching.

因此,使用半加成法的本发明的印刷配线板的制造方法的一实施方案包含下述步骤: Therefore, one embodiment of the manufacturing method of the printed wiring board of the present invention using the semi-additive method includes the following steps:

准备本发明的附载体铜箔与绝缘基板; Prepare the copper foil with carrier and insulating substrate of the present invention;

将上述附载体铜箔与绝缘基板积层; Laminate the above copper foil with carrier and insulating substrate;

在将上述附载体铜箔与绝缘基板积层后,将上述附载体铜箔的载体剥离; After laminating the above-mentioned copper foil with carrier and the insulating substrate, the carrier of the above-mentioned copper foil with carrier is peeled off;

通过使用酸等腐蚀溶液的蚀刻或电浆等方法将剥离上述载体而露出的极薄铜层完全去除; The extremely thin copper layer exposed by peeling off the above-mentioned carrier is completely removed by etching or plasma using a corrosive solution such as acid;

在通过利用蚀刻去除上述极薄铜层而露出的上述树脂上设置通孔或/及盲孔; providing through-holes or/and blind holes on the above-mentioned resin exposed by removing the above-mentioned ultra-thin copper layer by etching;

对含有上述通孔或/及盲孔的区域进行除胶渣处理; Perform desmear treatment on the area containing the above-mentioned through holes or/and blind holes;

在含有上述树脂及上述通孔或/及盲孔的区域设置无电解镀敷层; An electroless plating layer is provided in the area containing the above resin and the above through holes or/and blind holes;

在上述无电解镀敷层上设置光阻剂; setting a photoresist on the electroless plating layer;

对上述光阻剂进行曝光,其后,去除形成有电路的区域的光阻剂; exposing the above-mentioned photoresist, and thereafter, removing the photoresist in the region where the circuit is formed;

在去除了上述光阻剂的上述形成有电路的区域设置电解镀敷层; An electrolytic plating layer is provided in the above-mentioned region where the circuit is formed where the above-mentioned photoresist is removed;

去除上述光阻剂;及 removing said photoresist; and

通过快速蚀刻等去除位于除了上述形成有电路的区域以外的区域的无电解镀敷层。 The electroless plating layer located in the region other than the above-mentioned region where the circuit is formed is removed by flash etching or the like.

使用半加成法的本发明的印刷配线板的制造方法的另一实施方案包含下述步骤: Another embodiment of the manufacturing method of the printed wiring board of the present invention using the semi-additive method comprises the following steps:

准备本发明的附载体铜箔与绝缘基板; Prepare the copper foil with carrier and insulating substrate of the present invention;

将上述附载体铜箔与绝缘基板积层; Laminate the above copper foil with carrier and insulating substrate;

在将上述附载体铜箔与绝缘基板积层后,将上述附载体铜箔的载体剥离; After laminating the above-mentioned copper foil with carrier and the insulating substrate, the carrier of the above-mentioned copper foil with carrier is peeled off;

在剥离上述载体而露出的极薄铜层与上述绝缘树脂基板上设置通孔或/及盲孔; setting through holes or/and blind holes on the ultra-thin copper layer exposed by peeling off the above-mentioned carrier and the above-mentioned insulating resin substrate;

对含有上述通孔或/及盲孔的区域进行除胶渣处理; Perform desmear treatment on the area containing the above-mentioned through holes or/and blind holes;

通过使用酸等腐蚀溶液的蚀刻或电浆等方法将剥离上述载体而露出的极薄铜层完全去除; The extremely thin copper layer exposed by peeling off the above-mentioned carrier is completely removed by etching or plasma using a corrosive solution such as acid;

在含有由利用蚀刻等去除上述极薄铜层而露出的上述树脂及上述通孔或/及盲孔的区域设置无电解镀敷层; An electroless plating layer is provided in a region containing the above-mentioned resin exposed by removing the above-mentioned ultra-thin copper layer by etching or the like, and the above-mentioned through hole or/and blind hole;

在上述无电解镀敷层上设置光阻剂; setting a photoresist on the electroless plating layer;

对上述光阻剂进行曝光,其后,去除形成有电路的区域的光阻剂; exposing the above-mentioned photoresist, and thereafter, removing the photoresist in the region where the circuit is formed;

在去除了上述光阻剂的上述形成有电路的区域设置电解镀敷层; An electrolytic plating layer is provided in the above-mentioned region where the circuit is formed where the above-mentioned photoresist is removed;

去除上述光阻剂;及 removing said photoresist; and

通过快速蚀刻等去除位于除了上述形成有电路的区域以外的区域的无电解镀敷层。 The electroless plating layer located in the region other than the above-mentioned region where the circuit is formed is removed by flash etching or the like.

使用半加成法的本发明的印刷配线板的制造方法的另一实施方案包含下述步骤: Another embodiment of the manufacturing method of the printed wiring board of the present invention using the semi-additive method comprises the following steps:

准备本发明的附载体铜箔与绝缘基板; Prepare the copper foil with carrier and insulating substrate of the present invention;

将上述附载体铜箔与绝缘基板积层; Laminate the above copper foil with carrier and insulating substrate;

在将上述附载体铜箔与绝缘基板积层后,将上述附载体铜箔的载体剥离; After laminating the above-mentioned copper foil with carrier and the insulating substrate, the carrier of the above-mentioned copper foil with carrier is peeled off;

在剥离上述载体而露出的极薄铜层与上述绝缘树脂基板上设置通孔或/及盲孔; setting through holes or/and blind holes on the ultra-thin copper layer exposed by peeling off the above-mentioned carrier and the above-mentioned insulating resin substrate;

通过使用酸等腐蚀溶液的蚀刻或电浆等方法将剥离上述载体而露出的极薄铜层完全去除; The extremely thin copper layer exposed by peeling off the above-mentioned carrier is completely removed by etching or plasma using a corrosive solution such as acid;

对含有上述通孔或/及盲孔的区域进行除胶渣处理; Perform desmear treatment on the area containing the above-mentioned through holes or/and blind holes;

在含有通过利用蚀刻等去除上述极薄铜层而露出的上述树脂及上述通孔或/及盲孔的区域设置无电解镀敷层; An electroless plating layer is provided in a region containing the above-mentioned resin exposed by removing the above-mentioned ultra-thin copper layer by etching or the like, and the above-mentioned through hole or/and blind hole;

在上述无电解镀敷层上设置光阻剂; setting a photoresist on the electroless plating layer;

对上述光阻剂进行曝光,其后,去除形成有电路的区域的光阻剂; exposing the above-mentioned photoresist, and thereafter, removing the photoresist in the region where the circuit is formed;

在去除了上述光阻剂的上述形成有电路的区域设置电解镀敷层; An electrolytic plating layer is provided in the above-mentioned region where the circuit is formed where the above-mentioned photoresist is removed;

去除上述光阻剂;及 removing said photoresist; and

通过快速蚀刻等去除位于除了上述形成有电路的区域以外的区域的无电解镀敷层。 The electroless plating layer located in the region other than the above-mentioned region where the circuit is formed is removed by flash etching or the like.

使用半加成法的本发明的印刷配线板的制造方法的另一实施方案包含下述步骤: Another embodiment of the manufacturing method of the printed wiring board of the present invention using the semi-additive method comprises the following steps:

准备本发明的附载体铜箔与绝缘基板; Prepare the copper foil with carrier and insulating substrate of the present invention;

将上述附载体铜箔与绝缘基板积层; Laminate the above copper foil with carrier and insulating substrate;

在将上述附载体铜箔与绝缘基板积层后,将上述附载体铜箔的载体剥离; After laminating the above-mentioned copper foil with carrier and the insulating substrate, the carrier of the above-mentioned copper foil with carrier is peeled off;

通过使用酸等腐蚀溶液的蚀刻或电浆等方法将剥离上述载体而露出的极薄铜层完全去除; The extremely thin copper layer exposed by peeling off the above-mentioned carrier is completely removed by etching or plasma using a corrosive solution such as acid;

在通过利用蚀刻去除上述极薄铜层而露出的上述树脂的表面设置无电解镀敷层; providing an electroless plating layer on the surface of the above-mentioned resin exposed by removing the above-mentioned ultra-thin copper layer by etching;

在上述无电解镀敷层上设置光阻剂; setting a photoresist on the electroless plating layer;

对上述光阻剂进行曝光,其后,去除形成有电路的区域的光阻剂; exposing the above-mentioned photoresist, and thereafter, removing the photoresist in the region where the circuit is formed;

在去除了上述光阻剂的上述形成有电路的区域设置电解镀敷层; An electrolytic plating layer is provided in the above-mentioned region where the circuit is formed where the above-mentioned photoresist is removed;

去除上述光阻剂;及 removing said photoresist; and

通过快速蚀刻等去除位于除了上述形成有电路的区域以外的区域的无电解镀敷层及极薄铜层。 The electroless plating layer and the ultra-thin copper layer located in regions other than the above-mentioned region where the circuit is formed are removed by flash etching or the like.

在本发明中,所谓改进半加成法,是指在绝缘层上积层金属箔,通过光阻剂保护非电路形成部,通过电解镀敷增厚电路形成部的铜厚后,去除抗蚀剂,利用(快速)蚀刻去除上述电路形成部以外的金属箔,由此在绝缘层上形成电路的方法。 In the present invention, the so-called improved semi-additive method refers to laminating metal foil on the insulating layer, protecting the non-circuit forming part with photoresist, thickening the copper thickness of the circuit forming part by electrolytic plating, and removing the resist. A method in which a circuit is formed on an insulating layer by removing the metal foil other than the above-mentioned circuit formation part by (rapid) etching.

因此,使用改进半加成法的本发明的印刷配线板的制造方法的一实施方案包含下述步骤: Therefore, one embodiment of the manufacturing method of the printed wiring board of the present invention using the improved semi-additive method comprises the following steps:

准备本发明的附载体铜箔与绝缘基板; Prepare the copper foil with carrier and insulating substrate of the present invention;

将上述附载体铜箔与绝缘基板积层; Laminate the above copper foil with carrier and insulating substrate;

在将上述附载体铜箔与绝缘基板积层后,将上述附载体铜箔的载体剥离; After laminating the above-mentioned copper foil with carrier and the insulating substrate, the carrier of the above-mentioned copper foil with carrier is peeled off;

在剥离上述载体而露出的极薄铜层与绝缘基板上设置通孔或/及盲孔; Provide through holes or/and blind holes on the exposed ultra-thin copper layer and insulating substrate after peeling off the above-mentioned carrier;

对含有上述通孔或/及盲孔的区域进行除胶渣处理; Perform desmear treatment on the area containing the above-mentioned through holes or/and blind holes;

在上述含有通孔或/及盲孔的区域设置无电解镀敷层; An electroless plating layer is provided in the above-mentioned area containing through holes or/and blind holes;

在剥离上述载体而露出的极薄铜层表面设置光阻剂; A photoresist is arranged on the surface of the extremely thin copper layer exposed by peeling off the above-mentioned carrier;

在设置上述光阻剂后,通过电解镀敷形成电路; After the above-mentioned photoresist is provided, a circuit is formed by electrolytic plating;

去除上述光阻剂;及 removing said photoresist; and

利用快速蚀刻去除通过去除上述光阻剂而露出的极薄铜层。 The very thin copper layer exposed by removing the above photoresist is removed by flash etching.

使用改进半加成法的本发明的印刷配线板的制造方法的另一实施方案包含下述步骤: Another embodiment of the manufacturing method of the printed wiring board of the present invention using the modified semi-additive method comprises the following steps:

准备本发明的附载体铜箔与绝缘基板; Prepare the copper foil with carrier and insulating substrate of the present invention;

将上述附载体铜箔与绝缘基板积层; Laminate the above copper foil with carrier and insulating substrate;

在将上述附载体铜箔与绝缘基板积层后,将上述附载体铜箔的载体剥离; After laminating the above-mentioned copper foil with carrier and the insulating substrate, the carrier of the above-mentioned copper foil with carrier is peeled off;

在剥离上述载体而露出的极薄铜层上设置光阻剂; setting a photoresist on the extremely thin copper layer exposed by peeling off the above-mentioned carrier;

对上述光阻剂进行曝光,其后,去除形成有电路的区域的光阻剂; exposing the above-mentioned photoresist, and thereafter, removing the photoresist in the region where the circuit is formed;

在去除了上述光阻剂的上述形成有电路的区域设置电解镀敷层; An electrolytic plating layer is provided in the above-mentioned region where the circuit is formed where the above-mentioned photoresist has been removed;

去除上述光阻剂;及 removing said photoresist; and

通过快速蚀刻等去除位于除了上述形成有电路的区域以外的区域的极薄铜层。 The extremely thin copper layer located in regions other than the above-mentioned region where the circuit is formed is removed by flash etching or the like.

在本发明中,所谓部分加成法,是指在设置导体层而成的基板、视需要穿过通孔或辅助孔用孔而成的基板上赋予催化核,进行蚀刻形成导体电路,视需要设置阻焊剂或光阻剂后,在上述导体电路上通过无电解镀敷处理(视需要进一步进行电解镀敷处理)对通孔或辅助孔等进行增厚,由此制造印刷配线板的方法。 In the present invention, the so-called partial addition method refers to providing catalytic nuclei on a substrate formed by setting a conductor layer, a substrate formed by passing through a through hole or a hole for an auxiliary hole as needed, and etching to form a conductor circuit. A method of manufacturing a printed wiring board by thickening through-holes or auxiliary holes, etc., by electroless plating (if necessary, further electrolytic plating) on the conductor circuit after providing solder resist or photoresist .

因此,使用部分加成法的本发明的印刷配线板的制造方法的一实施方案包含下述步骤: Therefore, one embodiment of the manufacturing method of the printed wiring board of the present invention using the partial additive method includes the following steps:

准备本发明的附载体铜箔与绝缘基板; Prepare the copper foil with carrier and insulating substrate of the present invention;

将上述附载体铜箔与绝缘基板积层; Laminate the above copper foil with carrier and insulating substrate;

在将上述附载体铜箔与绝缘基板积层后,将上述附载体铜箔的载体剥离; After laminating the above-mentioned copper foil with carrier and the insulating substrate, the carrier of the above-mentioned copper foil with carrier is peeled off;

在剥离上述载体而露出的极薄铜层与绝缘基板上设置通孔或/及盲孔; Provide through holes or/and blind holes on the exposed ultra-thin copper layer and insulating substrate after peeling off the above-mentioned carrier;

对含有上述通孔或/及盲孔的区域进行除胶渣处理; Perform desmear treatment on the area containing the above-mentioned through holes or/and blind holes;

在上述含有通孔或/及盲孔的区域赋予催化核; Provide catalytic cores in the above-mentioned regions containing through holes or/and blind holes;

在剥离上述载体而露出的极薄铜层表面设置蚀刻阻剂; Etching resist is provided on the surface of the ultra-thin copper layer exposed by peeling off the above-mentioned carrier;

对上述蚀刻阻剂进行曝光而形成电路图案; Exposing the etching resist to form a circuit pattern;

利用使用酸等腐蚀溶液的蚀刻或电浆等方法去除上述极薄铜层及上述催化核,而形成电路; Removing the above-mentioned ultra-thin copper layer and the above-mentioned catalytic core by means of etching or plasma using a corrosive solution such as acid to form a circuit;

去除上述蚀刻阻剂; removing the above etching resist;

在利用使用酸等腐蚀溶液的蚀刻或电浆等方法去除上述极薄铜层及上述催化核而露出的上述绝缘基板表面,设置阻焊剂或光阻剂;及 Solder resist or photoresist is provided on the surface of the above-mentioned insulating substrate exposed by removing the above-mentioned ultra-thin copper layer and the above-mentioned catalyst nucleus by etching or plasma using a corrosive solution such as acid; and

在未设置上述阻焊剂或光阻剂的区域设置无电解镀敷层。 An electroless plating layer is provided in a region where the above-mentioned solder resist or photoresist is not provided.

在本发明中,所谓减成法,是指通过蚀刻等将覆铜积层板上的铜箔的不需要的部分选择性地去除,而形成导体图案的方法。 In the present invention, the subtractive method refers to a method of forming a conductor pattern by selectively removing unnecessary portions of the copper foil on the copper-clad laminate by etching or the like.

因此,使用减成法的本发明的印刷配线板的制造方法的一实施方案包含下述步骤: Therefore, one embodiment of the manufacturing method of the printed wiring board of the present invention using the subtractive method includes the following steps:

准备本发明的附载体铜箔与绝缘基板; Prepare the copper foil with carrier and insulating substrate of the present invention;

将上述附载体铜箔与绝缘基板积层; Laminate the above copper foil with carrier and insulating substrate;

在将上述附载体铜箔与绝缘基板积层后,将上述附载体铜箔的载体剥离; After laminating the above-mentioned copper foil with carrier and the insulating substrate, the carrier of the above-mentioned copper foil with carrier is peeled off;

在剥离上述载体而露出的极薄铜层与绝缘基板上设置通孔或/及盲孔; Provide through holes or/and blind holes on the exposed ultra-thin copper layer and insulating substrate after peeling off the above-mentioned carrier;

对含有上述通孔或/及盲孔的区域进行除胶渣处理; Perform desmear treatment on the area containing the above-mentioned through holes or/and blind holes;

在上述含有通孔或/及盲孔的区域设置无电解镀敷层; An electroless plating layer is provided in the above-mentioned area containing through holes or/and blind holes;

在上述无电解镀敷层的表面设置电解镀敷层; An electrolytic plating layer is provided on the surface of the above-mentioned electroless plating layer;

在上述电解镀敷层或/及上述极薄铜层的表面设置蚀刻阻剂; setting an etch resist on the surface of the above-mentioned electrolytic plating layer or/and the above-mentioned ultra-thin copper layer;

对上述蚀刻阻剂进行曝光而形成电路图案; Exposing the etching resist to form a circuit pattern;

利用使用酸等腐蚀溶液的蚀刻或电浆等方法去除上述极薄铜层及上述无电解镀敷层及上述电解镀敷层,而形成电路;及 The above-mentioned ultra-thin copper layer, the above-mentioned electroless plating layer, and the above-mentioned electrolytic plating layer are removed by etching or plasma using a corrosive solution such as acid to form a circuit; and

去除上述蚀刻阻剂。 The above etching resist is removed.

使用减成法的本发明的印刷配线板的制造方法的另一实施方案包含下述步骤: Another embodiment of the manufacturing method of the printed wiring board of the present invention using the subtractive method comprises the following steps:

准备本发明的附载体铜箔与绝缘基板; Prepare the copper foil with carrier and insulating substrate of the present invention;

将上述附载体铜箔与绝缘基板积层; Laminate the above copper foil with carrier and insulating substrate;

在将上述附载体铜箔与绝缘基板积层后,将上述附载体铜箔的载体剥离; After laminating the above-mentioned copper foil with carrier and the insulating substrate, the carrier of the above-mentioned copper foil with carrier is peeled off;

在剥离上述载体而露出的极薄铜层与绝缘基板上设置通孔或/及盲孔; Provide through holes or/and blind holes on the exposed ultra-thin copper layer and insulating substrate after peeling off the above-mentioned carrier;

对含有上述通孔或/及盲孔的区域进行除胶渣处理; Perform desmear treatment on the area containing the above-mentioned through holes or/and blind holes;

在上述含有通孔或/及盲孔的区域设置无电解镀敷层; An electroless plating layer is provided in the above-mentioned area containing through holes or/and blind holes;

在上述无电解镀敷层的表面形成遮罩; Forming a mask on the surface of the electroless plating layer;

在未形成遮罩的上述无电解镀敷层的表面设置电解镀敷层; An electrolytic plating layer is provided on the surface of the above-mentioned electroless plating layer that does not form a mask;

在上述电解镀敷层或/及上述极薄铜层的表面设置蚀刻阻剂; setting an etch resist on the surface of the above-mentioned electrolytic plating layer or/and the above-mentioned ultra-thin copper layer;

对上述蚀刻阻剂进行曝光而形成电路图案; Exposing the etching resist to form a circuit pattern;

利用使用酸等腐蚀溶液的蚀刻或电浆等方法去除上述极薄铜层及上述无电解镀敷层,而形成电路;及 Removing the above-mentioned ultra-thin copper layer and the above-mentioned electroless plating layer by etching or plasma using a corrosive solution such as acid to form a circuit; and

去除上述蚀刻阻剂。 The above etching resist is removed.

也可不进行设置通孔或/及盲孔的步骤、及其后的除胶渣步骤。 The step of providing through holes and/or blind holes and the subsequent step of removing smear may also be omitted.

本发明的印刷配线板的制造方法也可包含下述步骤:在本发明的附载体铜箔的上述表面处理层侧表面或上述载体侧表面形成电路的步骤、以上述电路埋入的方式在上述附载体铜箔的上述表面处理层侧表面或上述载体侧表面形成树脂层的步骤、在上述树脂层上形成电路的步骤、在上述树脂层上形成电路之后,将上述载体或上述极薄铜层剥离的步骤、及剥离上述载体或上述极薄铜层之后,通过去除上述极薄铜层或上述载体,而使形成在上述表面处理层侧表面或上述载体侧表面的埋入在上述树脂层的电路露出的步骤。又,印刷配线板的制造方法也可包含下述步骤:在本发明的附载体铜箔的上述表面处理层侧表面或上述载体侧表面形成电路的步骤、以上述电路埋入的方式在上述附载体铜箔的上述表面处理层侧表面或上述载体侧表面形成树脂层的步骤、将上述载体或上述极薄铜层剥离的步骤、及剥离上述载体或上述极薄铜层之后,通过去除上述极薄铜层或上述载体,而使形成在上述表面处理层侧表面或上述载体侧表面的埋入在上述树脂层的电路露出的步骤。 The method for manufacturing a printed wiring board of the present invention may include the steps of forming a circuit on the surface treatment layer side surface or the carrier side surface of the copper foil with a carrier of the present invention, embedding the circuit in the A step of forming a resin layer on the surface treatment layer side surface of the above-mentioned copper foil with a carrier or a step of forming a circuit on the above-mentioned resin layer, and after forming a circuit on the above-mentioned resin layer, the above-mentioned carrier or the above-mentioned ultra-thin copper The step of layer peeling, and after peeling the above-mentioned carrier or the above-mentioned ultra-thin copper layer, by removing the above-mentioned ultra-thin copper layer or the above-mentioned carrier, the resin layer formed on the surface treatment layer side surface or the above-mentioned carrier side surface is buried. The steps of the circuit exposed. In addition, the method of manufacturing a printed wiring board may include the steps of forming a circuit on the surface treatment layer side surface or the carrier side surface of the copper foil with a carrier of the present invention, embedding the circuit on the above-mentioned The step of forming a resin layer on the surface treatment layer side surface of the copper foil with a carrier or the above-mentioned carrier-side surface, the step of peeling the above-mentioned carrier or the above-mentioned ultra-thin copper layer, and after peeling the above-mentioned carrier or the above-mentioned ultra-thin copper layer, removing the above-mentioned A step of exposing the circuit embedded in the resin layer formed on the side surface of the surface treatment layer or the surface of the carrier side by forming an ultra-thin copper layer or the carrier.

此处,利用图式详细地说明使用有本发明的附载体铜箔的印刷配线板的制造方法的具体实施例。再者,此处,以具有形成有粗化处理层来作为表面处理层的极薄铜层的附载体铜箔为例进行说明,但并不限于此,使用该表面处理层并非为粗化处理层的附载体铜箔,也可同样地进行下述印刷配线板的制造方法。 Here, the specific Example of the manufacturing method of the printed wiring board using the copper foil with a carrier of this invention is demonstrated in detail using drawing. In addition, here, the copper foil with a carrier having an ultra-thin copper layer formed with a roughening treatment layer as a surface treatment layer is described as an example, but it is not limited to this, and the use of this surface treatment layer does not mean roughening treatment. Layered copper foil with a carrier can also be performed in the same manner as the following method for producing a printed wiring board.

首先,如图1A所示,准备具有表面形成有粗化处理层的极薄铜层的附载体铜箔(第1层)。 First, as shown in FIG. 1A , a copper foil with a carrier (first layer) having an ultra-thin copper layer in which a roughened layer is formed on the surface is prepared.

其次,如图1B所示,在极薄铜层的粗化处理层上涂布抗蚀剂,进行曝光、显影而将抗蚀剂蚀刻为特定形状。 Next, as shown in FIG. 1B , a resist is applied on the roughened layer of the ultra-thin copper layer, and exposure and development are performed to etch the resist into a specific shape.

其次,如图1C所示,通过在形成电路用镀层后去除抗蚀剂,而形成特定形状的电路镀层。 Next, as shown in FIG. 1C , by removing the resist after the formation of the circuit plating layer, a circuit plating layer of a specific shape is formed.

其次,如图2D所示,以被覆电路镀层的方式(以埋没电路镀层的方式)在极薄铜层上设置埋入树脂而积层树脂层,继而自极薄铜层侧接着另一附载体铜箔(第2层)。 Next, as shown in Fig. 2D, an embedding resin is placed on the ultra-thin copper layer to form a lamination resin layer in such a way as to cover the circuit plating layer (by burying the circuit plating layer), and then another carrier is attached from the ultra-thin copper layer side. Copper Foil (Layer 2).

其次,如图2E所示,自第2层的附载体铜箔剥离载体。 Next, as shown in FIG. 2E , the carrier is peeled off from the second-layer copper foil with a carrier.

其次,如图2F所示,在树脂层的特定位置进行雷射开孔,使电路镀层露出而形成盲孔。 Next, as shown in FIG. 2F , laser drilling is performed at a specific position of the resin layer to expose the circuit plating layer to form a blind hole.

其次,如图3G所示,在盲孔中埋入铜,形成通孔填充物。 Next, as shown in Figure 3G, copper is buried in the blind vias to form a via fill.

其次,如图3H所示,在通孔填充物上,以上述图1-B及图1-C的方式形成电路镀层。 Next, as shown in FIG. 3H , a circuit plating layer is formed on the through-hole filling in the manner shown in FIGS. 1-B and 1-C described above.

其次,如图3I所示,自第1层的附载体铜箔剥离载体。 Next, as shown in FIG. 3I , the carrier is peeled off from the first-layer copper foil with a carrier.

其次,如图4J所示,通过快速蚀刻去除两表面的极薄铜层,使树脂层内的电路镀层的表面露出。 Next, as shown in FIG. 4J , the extremely thin copper layers on both surfaces are removed by rapid etching, so that the surface of the circuit plating layer in the resin layer is exposed.

其次,如图4K所示,在树脂层内的电路镀层上形成凸块,在该焊料上形成铜柱。如此制作使用有本发明的附载体铜箔的印刷配线板。 Next, as shown in FIG. 4K, bumps are formed on the circuit plating in the resin layer, and copper pillars are formed on the solder. Thus, the printed wiring board using the copper foil with a carrier of this invention was produced.

上述另一附载体铜箔(第2层)可使用本发明的附载体铜箔,可使用先前的附载体铜箔,进而也可使用通常的铜箔。又,可在图3H所示的第2层电路上进一步形成1层或多层电路,可通过半加成法、减成法、部分加成法或改进半加成法中的任一种方法而形成该等电路。 The said another copper foil with a carrier (2nd layer) can use the copper foil with a carrier of this invention, the conventional copper foil with a carrier can be used, and a normal copper foil can also be used. Also, one or more layers of circuits can be further formed on the second layer circuit shown in Figure 3H, by any method in semi-additive method, subtractive method, partial additive method or improved semi-additive method And form these circuits.

又,上述第1层中使用的附载体铜箔也可在该附载体铜箔的载体侧表面具有基板。通过具有该基板,第1层中使用的附载体铜箔得到支持,变得不易产生皱褶,因此有生产性提高的优点。再者,只要上述基板发挥支持上述第1层中使用的附载体铜箔的效果,则可使用全部基板。例如,可使用本申请说明书中记载的载体、预浸体、树脂层或公知的载体、预浸体、树脂层、金属板、金属箔、无机化合物的板、无机化合物的箔、有机化合物的板、有机化合物的箔作为上述基板。 Moreover, the copper foil with a carrier used for the said 1st layer may have a board|substrate on the carrier side surface of this copper foil with a carrier. By having this substrate, the copper foil with a carrier used in the first layer is supported, and wrinkles are less likely to be generated, so there is an advantage that productivity improves. In addition, as long as the said board|substrate exhibits the effect of supporting the copper foil with a carrier used by the said 1st layer, all board|substrates can be used. For example, the carrier, prepreg, resin layer described in the specification of this application or known carrier, prepreg, resin layer, metal plate, metal foil, inorganic compound plate, inorganic compound foil, organic compound plate can be used , a foil of an organic compound as the above-mentioned substrate.

在载体侧表面形成基板的时间点并无特别限制,但必须在剥离载体前形成。尤其是,优选为在在上述附载体铜箔的上述极薄铜层侧表面形成树脂层的步骤前形成,更优选为在在附载体铜箔的上述极薄铜层侧表面形成电路的步骤前形成。 The timing of forming the substrate on the side surface of the carrier is not particularly limited, but must be formed before the carrier is peeled off. In particular, it is preferably formed before the step of forming a resin layer on the surface of the copper foil with a carrier on the side of the ultra-thin copper layer, more preferably before the step of forming a circuit on the surface of the copper foil with a carrier on the side of the above-mentioned ultra-thin copper layer. form.

再者,埋入树脂(resin)可使用公知的树脂、预浸体。可使用例如BT(双顺丁烯二酰亚胺三嗪)树脂或含浸BT树脂的玻璃布即预浸体、AjinomotoFine-Techno股份有限公司制造的ABF膜或ABF。又,上述埋入树脂可含有热硬化性树脂,也可为热塑性树脂。又,上述埋入树脂也可含有热塑性树脂。上述埋入树脂的种类并无特别限定,作为优选者,例如可列举:包括环氧树脂、聚酰亚胺树脂、多官能性氰酸酯化合物、顺丁烯二酰亚胺化合物、聚乙烯醇缩乙醛树脂、胺酯树脂、嵌段共聚合聚酰亚胺树脂、嵌段共聚合聚酰亚胺树脂等在内的树脂,或者纸基材酚系树脂、纸基材环氧树脂、合成纤维布基材环氧树脂、玻璃布-纸复合基材环氧树脂、玻璃布-玻璃不织布复合基材环氧树脂及玻璃布基材环氧树脂、聚酯膜、聚酰亚胺膜、液晶聚合物膜、氟树脂膜等。 In addition, well-known resin and prepreg can be used for embedding resin (resin). For example, a prepreg which is a glass cloth impregnated with BT (bismaleimide triazine) resin or BT resin, ABF film or ABF manufactured by Ajinomoto Fine-Techno Co., Ltd. can be used. In addition, the embedding resin may contain a thermosetting resin or may be a thermoplastic resin. In addition, the embedding resin may contain a thermoplastic resin. The type of the embedding resin is not particularly limited, but examples of preferred ones include epoxy resins, polyimide resins, polyfunctional cyanate compounds, maleimide compounds, polyvinyl alcohol Resins including acetal resin, urethane resin, block copolymerized polyimide resin, block copolymerized polyimide resin, etc., or paper-based phenolic resin, paper-based epoxy resin, synthetic Fiber cloth base epoxy resin, glass cloth-paper composite base epoxy resin, glass cloth-glass non-woven composite base epoxy resin and glass cloth base epoxy resin, polyester film, polyimide film, liquid crystal Polymer film, fluororesin film, etc.

又,本发明的印刷配线板的制造方法也可为包含下述步骤的印刷配线板的制造方法(无芯法):将本发明的附载体铜箔的上述极薄铜层侧表面或上述载体侧表面与树脂基板进行积层的步骤;在与上述和树脂基板积层的表面处理层侧表面或上述载体侧表面为相反侧的附载体铜箔的表面至少设置1次树脂层和电路此两层的步骤;及在形成上述树脂层及电路此两层后,从上述附载体铜箔剥离上述载体或上述极薄铜层的步骤。关于上述无芯法,作为具体的例子,首先,将本发明的附载体铜箔的表面处理层侧表面或载体侧表面和树脂基板进行积层。然后,在与和树脂基板积层的表面处理层侧表面或上述载体侧表面为相反侧的附载体铜箔的表面形成树脂层。也可以在形成在载体侧表面或表面处理层侧表面的树脂层从载体侧或表面处理层侧进而积层另一片附载体铜箔。在此情况下,成为如下构成:以树脂基板为中心,在上述树脂基板的两表面侧以载体/中间层/极薄铜层/表面处理层的顺序或以表面处理层/极薄铜层/中间层/载体的顺序积层附载体铜箔。也可以在两端的表面处理层或载体所露出的表面设置另一树脂层,并进而设置铜层或金属层,然后对上述铜层或金属层进行加工,由此形成电路。也可以进而将另一树脂层以填埋上述电路的方式设置在上述电路上。又,也可以将此种电路及树脂层的形成进行1次以上(增层法)。并且,关于以上述方式形成的积层体(以下也称为积层体B),可以将各附载体铜箔的极薄铜层或载体从载体或极薄铜层剥离而制作无芯基板。另外,在制作上述无芯基板时,也可以使用2个附载体铜箔,制作下述具有表面处理层/极薄铜层/中间层/载体/载体/中间层/极薄铜层/表面处理层的构成的积层体、或具有载体/中间层/极薄铜层表面处理层/表面处理层/极薄铜层/中间层/载体的构成的积层体、或具有载体/中间层/极薄铜层/表面处理层/载体/中间层/极薄铜层/表面处理层的构成的积层体,并将上述积层体用于中心。可以在这些积层体(以下也称为积层体A)的两侧的极薄铜层或载体的表面设置1次以上树脂层及电路此两层,在设置1次以上树脂层及电路此两层后,将各附载体铜箔的极薄铜层或载体从载体或极薄铜层剥离而制作无芯基板。上述积层体在表面处理层的表面、表面处理层与极薄铜层之间、载体的表面、载体与载体之间、表面处理层与表面处理层之间、极薄铜层与载体之间也可以具有其它层。另外,本说明书中,“表面处理层的表面”、“表面处理层侧表面”、“载体的表面”、“载体侧表面”、“载体表面”、“积层体的表面”、“积层体表面”,当表面处理层、载体、积层体在表面处理层表面、载体表面、积层体表面具有其它层的情况下,是设为包含上述其它层的表面(最表面)的概念。又,积层体优选具有表面处理层/极薄铜层/中间层/载体/载体/中间层/极薄铜层/表面处理层的构成。这是由于:在使用上述积层体制作无芯基板时,因为在无芯基板侧配置极薄铜层,所以易于使用改进半加成法而在无芯基板上形成电路。又,是由在:因为极薄铜层的厚度薄,所以容易去除上述极薄铜层,去除极薄铜层后易于使用半加成法而在无芯基板上形成电路。 In addition, the method for manufacturing a printed wiring board of the present invention may be a method for manufacturing a printed wiring board (coreless method) including the step of coating the surface on the side of the ultra-thin copper layer of the copper foil with a carrier of the present invention or A step of laminating the surface on the carrier side and the resin substrate; providing at least one resin layer and a circuit on the surface of the copper foil with a carrier opposite to the surface treatment layer layer laminated with the resin substrate or the surface of the carrier side The step of these two layers; and the step of peeling the above-mentioned carrier or the above-mentioned ultra-thin copper layer from the above-mentioned copper foil with a carrier after forming the two layers of the above-mentioned resin layer and the circuit. Regarding the above-mentioned coreless method, as a specific example, first, the surface treatment layer side surface or the carrier side surface of the copper foil with a carrier of the present invention is laminated with a resin substrate. Then, a resin layer is formed on the surface of the copper foil with a carrier opposite to the surface treatment layer side surface laminated with the resin substrate or the carrier side surface. Another copper foil with a carrier may be laminated from the carrier side or the surface treatment layer side to the resin layer formed on the carrier side surface or the surface treatment layer side surface. In this case, the following structure is adopted: centering on the resin substrate, on both sides of the above-mentioned resin substrate, in the order of carrier/intermediate layer/ultra-thin copper layer/surface treatment layer or in the order of surface treatment layer/ultra-thin copper layer/ Sequential lamination of interlayer/carrier copper foil with carrier. It is also possible to provide another resin layer on the surface treatment layer at both ends or the exposed surface of the carrier, further provide a copper layer or a metal layer, and then process the copper layer or metal layer to form a circuit. Furthermore, another resin layer may be provided on the above-mentioned circuit so as to bury the above-mentioned circuit. Moreover, formation of such a circuit and a resin layer may be performed once or more (build-up method). And, about the laminate (hereinafter also referred to as laminate B) formed as described above, the ultra-thin copper layer or the carrier of each copper foil with a carrier can be peeled off from the carrier or the ultra-thin copper layer to produce a coreless substrate. In addition, when making the above-mentioned coreless substrate, it is also possible to use two copper foils with a carrier to make the following surface treatment layer/ultra-thin copper layer/intermediate layer/carrier/carrier/intermediate layer/ultra-thin copper layer/surface treatment layer composition, or a laminate with a carrier/intermediate layer/extremely thin copper layer surface treatment layer/surface treatment layer/extremely thin copper layer/intermediate layer/carrier, or a laminated body with a carrier/intermediate layer/ A laminate composed of an ultra-thin copper layer/surface treatment layer/carrier/intermediate layer/ultra-thin copper layer/surface treatment layer is used as the center. The ultra-thin copper layer or the surface of the carrier on both sides of these laminates (hereinafter also referred to as laminate A) may be provided with one or more resin layers and two layers of circuits, and after one or more resin layers and circuits are provided. After two layers, the ultra-thin copper layer or the carrier of each copper foil with carrier is peeled off from the carrier or the ultra-thin copper layer to produce a coreless substrate. The above laminate is on the surface of the surface treatment layer, between the surface treatment layer and the ultra-thin copper layer, on the surface of the carrier, between the carrier and the carrier, between the surface treatment layer and the surface treatment layer, and between the ultra-thin copper layer and the carrier There may also be other layers. In addition, in this specification, "the surface of the surface treatment layer", "the surface on the side of the surface treatment layer", "the surface of the carrier", "the surface on the side of the carrier", "the surface of the carrier", "the surface of the laminate", "the layered "Body surface", when the surface treatment layer, the carrier, or the laminate has other layers on the surface of the surface treatment layer, the carrier, or the laminate, is a concept defined as the surface (the outermost surface) including the above-mentioned other layers. Also, the laminate preferably has a configuration of surface treatment layer/ultra-thin copper layer/intermediate layer/carrier/carrier/intermediate layer/ultra-thin copper layer/surface treatment layer. This is because, when a coreless substrate is produced using the above-mentioned laminate, since an extremely thin copper layer is disposed on the coreless substrate side, it is easy to form a circuit on the coreless substrate by using the modified semi-additive method. Also, because the ultra-thin copper layer is thin, it is easy to remove the ultra-thin copper layer, and after removing the ultra-thin copper layer, it is easy to form a circuit on the coreless substrate by using a semi-additive method.

另外,在本说明书中,没有特别记载成“积层体A”或“积层体B”的“积层体”表示至少包含积层体A及积层体B的积层体。 In addition, in this specification, the "layered body" not specifically described as "layered body A" or "layered body B" means a layered body including at least the layered body A and the layered body B.

再者,在上述无芯基板的制造方法中,通过利用树脂覆盖附载体铜箔或积层体(积层体A)的端面的一部分或全部,在利用增层法制造印刷配线板时,可以防止化学溶剂渗入到中间层或构成积层体的一片附载体铜箔和另一片附载体铜箔之间,可以防止由化学溶剂的渗入所导致的极薄铜层和载体的分离或附载体铜箔的腐蚀,可以提升良率。作为此处所使用的“覆盖附载体铜箔的端面的一部分或全部的树脂”或“覆盖积层体的端面的一部分或全部的树脂”,可以使用能够用于树脂层的树脂。又,在上述无芯基板的制造方法中,在对附载体铜箔或积层体进行俯视时,附载体铜箔或积层体的积层部分(载体和极薄铜层的积层部分、或一片附载体铜箔和另一片附载体铜箔的积层部分)的外周的至少一部分可以由树脂或预浸体覆盖。另外,利用上述无芯基板的制造方法所形成的积层体(积层体A)也可以是使一对附载体铜箔相互以可分离的方式接触而构成。又,在对上述附载体铜箔进行俯视时,也可以由树脂或预浸体覆盖附载体铜箔或积层体的积层部分(载体和极薄铜层的积层部分、或一片附载体铜箔和另一片附载体铜箔的积层部分)的外周整体。通过设为此种构成,在俯视附载体铜箔或积层体时,附载体铜箔或积层体的积层部分由树脂或预浸体覆盖,可以防止其它部件从此部分的侧向、也就是相对于积层方向为横向的方向碰撞,结果,可以减少操作中载体和极薄铜层或附载体铜箔彼此的剥离。又,通过以不露出附载体铜箔或积层体的积层部分的外周的方式利用树脂或预浸体进行覆盖,可以防止如上所述化学溶剂处理步骤中化学溶剂向上述积层部分的界面的渗入,可以防止附载体铜箔的腐蚀或侵蚀。再者,在从积层体的一对附载体铜箔分离一片附载体铜箔时,或分离附载体铜箔的载体和铜箔(极薄铜层)时,必须通过切断等去除利用树脂或预浸体覆盖的附载体铜箔或积层体的积层部分(载体和极薄铜层的积层部分、或一片附载体铜箔和另一片附载体铜箔的积层部分)。 Furthermore, in the manufacturing method of the above-mentioned coreless substrate, by covering part or all of the end faces of the copper foil with a carrier or the laminate (laminate A) with a resin, when manufacturing a printed wiring board by the build-up method, It can prevent chemical solvents from infiltrating into the middle layer or between a piece of copper foil with a carrier and another copper foil with a carrier that constitute the laminate, and can prevent the separation of the ultra-thin copper layer and the carrier caused by the infiltration of chemical solvents or the carrier. Corrosion of copper foil can improve yield. Resins that can be used for the resin layer can be used as the “resin covering part or all of the end surface of the copper foil with a carrier” or “the resin covering part or all of the end surface of the laminate” used here. In addition, in the above-mentioned manufacturing method of the coreless substrate, when the copper foil with a carrier or the laminated body is planarly viewed, the laminated part of the copper foil with a carrier or the laminated body (the laminated part of the carrier and the ultra-thin copper layer, or a laminated portion of one sheet of copper foil with a carrier and the other sheet of copper foil with a carrier) may be covered with a resin or a prepreg. In addition, the laminated body (laminated body A) formed by the manufacturing method of the said coreless board|substrate may be comprised so that a pair of copper foil with a carrier may be contact|connected separably. In addition, when the above-mentioned copper foil with a carrier is viewed from above, the laminated part of the copper foil with a carrier or the laminate (the laminated part of the carrier and the ultra-thin copper layer, or one sheet of the carrier) may be covered with a resin or a prepreg. Copper foil and another laminated part with carrier copper foil) The whole outer periphery. With such a configuration, when the copper foil with a carrier or the laminated body is viewed from above, the laminated portion of the copper foil with a carrier or the laminated body is covered with resin or prepreg. It is collision in a direction transverse to the lamination direction, and as a result, the peeling of the carrier and the ultra-thin copper layer or copper foil with a carrier during operation can be reduced. In addition, by covering the outer periphery of the laminated part of the copper foil with a carrier or the laminated body with a resin or a prepreg, it is possible to prevent the interface of the chemical solvent from the above-mentioned laminated part in the chemical solvent treatment step. The infiltration can prevent the corrosion or erosion of the copper foil with the carrier. Furthermore, when separating a single copper foil with a carrier from a pair of copper foils with a carrier in a laminate, or when separating the carrier and copper foil (extremely thin copper layer) of the copper foil with a carrier, it is necessary to remove the used resin or copper foil by cutting or the like. Copper foil with a carrier covered by a prepreg or the laminated part of a laminate (a laminated part of a carrier and an ultra-thin copper layer, or a laminated part of one copper foil with a carrier and another copper foil with a carrier).

也可以将本发明的附载体铜箔从载体侧或表面处理层侧积层在另一片本发明的附载体铜箔的载体侧或表面处理层侧而构成积层体。又,也可为下述积层体:上述一片附载体铜箔的上述载体侧表面或上述表面处理层侧表面和上述另一片附载体铜箔的上述载体侧表面或上述表面处理层侧表面,视需要经由接着剂直接积层而获得者。又,也可将上述一片附载体铜箔的载体或表面处理层和上述另一片附载体铜箔的载体或表面处理层接合。又,也可以被树脂覆盖该积层体的端面的一部分或全部。 The copper foil with a carrier of the present invention may be laminated on the carrier side or the surface treatment layer side of another copper foil with a carrier of the present invention from the carrier side or the surface treatment layer side to form a laminate. In addition, the following laminate may be used: the carrier-side surface or the surface-treated layer-side surface of the one copper foil with a carrier and the carrier-side surface or the surface-treated layer-side surface of the other copper foil with a carrier, If necessary, it can be obtained by direct lamination with an adhesive. Moreover, you may join the carrier or the surface treatment layer of the said one copper foil with a carrier, and the carrier or the surface treatment layer of the said other copper foil with a carrier. In addition, part or all of the end faces of the laminate may be covered with resin.

载体彼此的积层除了单纯地重迭以外,例如可以利用以下方法进行。 Lamination of carriers can be performed by, for example, the following method other than simply overlapping.

(a)冶金接合方法:焊接(电弧焊接、TIG(tungsteninertgas,钨-惰性气体)焊接、MIG(metalinertgas,金属-惰性气体)焊接、电阻焊接、缝焊接、点焊接)、压接(超音波焊接、摩擦搅拌焊接)、软焊; (a) Metallurgical joining method: welding (arc welding, TIG (tungsteninertgas, tungsten-inert gas) welding, MIG (metalinertgas, metal-inert gas) welding, resistance welding, seam welding, spot welding), crimping (ultrasonic welding , friction stir welding), soldering;

(b)机械接合方法:敛缝、利用铆钉的接合(利用自冲铆的接合、利用铆钉的接合)、装订机; (b) Mechanical joining methods: caulking, joints by rivets (joints by self-piercing riveting, joints by rivets), bookbinding machines;

(c)物理接合方法:接着剂、(双面)胶带 (c) Physical bonding method: Adhesive, (double-sided) tape

通过将一载体的一部分或全部和另一载体的一部分或全部使用上述接合方法进行接合,可以制造将一载体和另一载体积层,使载体彼此以可分离的方式接触而构成的积层体。若一载体和另一载体较弱地连接,则在将一载体和另一载体积层的情况下,即使不去除一载体和另一载体的连接部,也可以将一载体和另一载体分离。另外,在一载体和另一载体较强地连接的情况下,通过将一载体和另一载体连接的部位利用切断或化学研磨(蚀刻等)、机械研磨等去除,可以分离一载体和另一载体。 By joining a part or all of one carrier and a part or all of another carrier using the above-mentioned joining method, it is possible to manufacture a laminate constituted by layering a carrier and another carrier so that the carriers are in detachable contact with each other. . If one carrier and another carrier are weakly connected, in the case of layering one carrier and another carrier, it is possible to separate one carrier from another carrier without removing the connecting part of one carrier and another carrier . In addition, in the case where one carrier is strongly connected to another carrier, one carrier and another carrier can be separated by cutting or removing chemical polishing (etching, etc.), mechanical polishing, etc. at the part where one carrier is connected to another carrier. carrier.

又,可以通过实施如下步骤而制作印刷配线板:在以上述方式构成的积层体至少设置1次树脂层和电路此两层的步骤;及在至少形成1次上述树脂层及电路此两层后,从上述积层体的附载体铜箔剥离上述极薄铜层或载体的步骤。再者,也可以在该积层体的一个表面或两个表面设置树脂层和电路此两层。 In addition, a printed wiring board can be manufactured by performing the steps of: providing the two layers of the resin layer and the circuit at least once in the laminated body constituted as described above; and forming the two layers of the resin layer and the circuit at least once. After layering, the step of peeling the above-mentioned ultra-thin copper layer or the carrier from the copper foil with a carrier of the above-mentioned laminate. Furthermore, two layers of a resin layer and a circuit may be provided on one surface or both surfaces of the laminate.

[实施例] [Example]

以下,基于实验例进行说明。再者,本实验例仅为一例,并不仅限制于该例。 Hereinafter, it demonstrates based on an experimental example. In addition, this experimental example is only an example, and is not limited to this example.

1.附载体铜箔的制造 1. Manufacture of copper foil with carrier

利用以下的顺序,制作附载体铜箔。 Copper foil with a carrier was produced by the following procedure.

首先,准备表1所记载的厚度的长电解铜箔或压延铜箔来作为载体。 First, long electrodeposited copper foil or rolled copper foil having the thickness described in Table 1 was prepared as a carrier.

电解铜箔利用下述条件来制造。 Electrodeposited copper foil was produced under the following conditions.

(电解浴组成) (Electrolytic Bath Composition)

Cu:80~120g/L Cu: 80~120g/L

H2SO4:80~120g/L H2SO4 : 80~120g/L

Cl:20~80mg/L Cl: 20~80mg/L

清漆:0.1~6.0mg/L Varnish: 0.1~6.0mg/L

(电解条件) (electrolysis conditions)

液温:55~65℃ Liquid temperature: 55~65℃

电流密度:100A/dm2 Current density: 100A/ dm2

电解液流速:1.5m/秒 Electrolyte flow rate: 1.5m/s

压延铜箔在例9、12是使用精铜(JISH3100C1100所规定的精铜),在例10、11是使用无氧铜(JISH3100C1020所规定的无氧铜)。表1的载体的种类栏的“压延铜箔(Ag180ppm)”是指在精铜中添加有180质量ppm的Ag。 As for the rolled copper foil, in Examples 9 and 12, refined copper (refined copper specified in JISH3100C1100) was used, and in Examples 10 and 11, oxygen-free copper (oxygen-free copper specified in JISH3100C1020) was used. "Rolled copper foil (Ag 180 ppm)" in the column of the type of carrier in Table 1 means that 180 mass ppm of Ag was added to refined copper.

<实施例的中间层> <Intermediate layer of the example>

对上述铜箔的光泽面(shinysurface)利用以下条件在辊对辊型的连续镀敷线上,通过电镀而形成中间层。 An intermediate layer was formed by electroplating on a roll-to-roll type continuous plating line on the shiny surface of the above-mentioned copper foil under the following conditions.

·Ni层 ·Ni layer

硫酸镍:250~300g/L Nickel sulfate: 250~300g/L

氯化镍:35~45g/L Nickel chloride: 35~45g/L

乙酸镍:10~20g/L Nickel acetate: 10~20g/L

柠檬酸三钠:15~30g/L Trisodium citrate: 15~30g/L

光泽剂:糖精、丁炔二醇等 Gloss agent: saccharin, butynediol, etc.

十二烷基硫酸钠:30~100ppm Sodium lauryl sulfate: 30~100ppm

pH:4~6 pH: 4~6

浴温:50~70℃ Bath temperature: 50~70℃

电流密度:3~15A/dm2 Current density: 3 ~15A/dm2

附着量:4000μg/dm2 Adhesion amount: 4000μg/dm 2

在水洗及酸洗后,接着于辊对辊型的连续镀敷线上,利用以下条件通过电解铬酸盐处理而使附着量为10μg/dm2的Cr层附着于Ni层上。 After water washing and pickling, a Cr layer with an adhesion amount of 10 μg/dm 2 was deposited on the Ni layer by electrolytic chromate treatment on a roll-to-roll continuous plating line under the following conditions.

·电解铬酸盐处理 ·Electrolytic chromate treatment

液体组成:重铬酸钾1~10g/L、锌0~5g/L Liquid composition: potassium dichromate 1~10g/L, zinc 0~5g/L

pH:3~4 pH: 3~4

液温:50~60℃ Liquid temperature: 50~60℃

电流密度:0.1~2.6A/dm2 Current density: 0.1~2.6A/ dm2

库伦量:0.5~30As/dm2 Coulomb quantity: 0.5~30As/dm 2

<实施例的极薄铜层> <Extremely thin copper layer of the example>

接着,在辊对辊型的连续镀敷线上,利用以下条件通过电镀而在中间层上形成厚度3μm的极薄铜层,从而制得附载体铜箔。 Next, an ultra-thin copper layer with a thickness of 3 μm was formed on the intermediate layer by electroplating under the following conditions on a roll-to-roll continuous plating line, thereby producing a copper foil with a carrier.

·极薄铜层 ·Extremely thin copper layer

铜浓度:30~120g/L Copper concentration: 30~120g/L

H2SO4浓度:20~120g/L H 2 SO 4 concentration: 20~120g/L

电解液温度:20~80℃ Electrolyte temperature: 20~80℃

电流密度:10~100A/dm2 Current density: 10 ~100A/dm2

<实施例的表面处理层> <Surface treatment layer of the example>

利用以下的表面处理条件而对上述极薄铜层的表面进行表面处理。将通过该表面处理而形成的表面处理层的层构成示于表1。 The surface of the said ultra-thin copper layer was surface-treated by the following surface treatment conditions. Table 1 shows the layer constitution of the surface treatment layer formed by this surface treatment.

在一部份的实施例中,对上述极薄铜层的表面以下述条件进行选自Cu-W合金镀敷、Cu-P合金镀敷、Cu-Co-Ni合金镀敷中的一种镀敷来作为粗化处理。 In some embodiments, one of Cu-W alloy plating, Cu-P alloy plating, and Cu-Co-Ni alloy plating is carried out on the surface of the above-mentioned ultra-thin copper layer under the following conditions: Apply as a roughening treatment.

·Cu-W合金镀敷(例1、2、15、16) ・Cu-W alloy plating (Example 1, 2, 15, 16)

液体组成:Cu15g/公升、硫酸100g/公升、W5mg/公升 Liquid composition: Cu15g/liter, sulfuric acid 100g/liter, W5mg/liter

温度:25℃ Temperature: 25°C

(第一阶段) (The first stage)

电流密度(Dk):90A/dm2 Current density (D k ): 90A/dm 2

时间:1.5秒 Time: 1.5 seconds

(第二阶段) (second stage)

电流密度(Dk):20A/dm2 Current density (D k ): 20A/dm 2

时间:3秒 Time: 3 seconds

·Cu-P合金镀敷(例3、4) ·Cu-P alloy plating (Example 3, 4)

液体组成:Cu30g/公升、硫酸100g/公升、P500mg/公升 Liquid composition: Cu30g/liter, sulfuric acid 100g/liter, P500mg/liter

温度:30℃ Temperature: 30°C

(第一阶段) (The first stage)

电流密度(Dk):140A/dm2 Current density (D k ): 140A/dm 2

时间:0.6秒 Time: 0.6 seconds

(第二阶段) (second stage)

电流密度(Dk):20A/dm2 Current density (D k ): 20A/dm 2

时间:2.0秒 Time: 2.0 seconds

·Cu-Co-Ni合金镀敷(例5、6、14) ·Cu-Co-Ni alloy plating (Example 5, 6, 14)

液体组成:Cu15g/公升、Co8g/公升、Ni8g/公升 Liquid composition: Cu15g/liter, Co8g/liter, Ni8g/liter

pH:1~3 pH: 1~3

温度:40℃ Temperature: 40°C

(第一阶段) (The first stage)

电流密度(Dk):45A/dm2 Current density (D k ): 45A/dm 2

时间:0.6秒 Time: 0.6 seconds

(第二阶段) (second stage)

电流密度(Dk):30A/dm2 Current density (D k ): 30A/dm 2

时间:0.8秒 Time: 0.8 seconds

接着,依序进行选自以下的耐热处理、防锈处理、铬酸盐处理、硅烷偶合处理中的至少一种以上的处理。在进行各处理前进行表面的水洗净。 Next, at least one or more treatments selected from the following heat resistance treatment, rust prevention treatment, chromate treatment, and silane coupling treatment are sequentially performed. Wash the surface with water before performing each treatment.

·耐热处理(形成耐热层) ・Heat-resistant treatment (formation of heat-resistant layer)

液体组成:Co1~8g/公升、Ni10~20g/公升 Liquid composition: Co1~8g/liter, Ni10~20g/liter

pH:2~3 pH: 2~3

温度:40℃ Temperature: 40°C

电流密度(Dk):5A/dm2 Current density (D k ): 5A/dm 2

时间:1.0秒 Time: 1.0 seconds

·防锈处理(形成防锈层) Anti-rust treatment (formation of anti-rust layer)

液体组成:Ni15~30g/公升、Zn1~10g/公升 Liquid composition: Ni15~30g/liter, Zn1~10g/liter

pH:2~4 pH: 2~4

温度:40℃ Temperature: 40°C

电流密度(Dk):5A/dm2 Current density (D k ): 5A/dm 2

时间:1.0秒 Time: 1.0 seconds

·电解铬酸盐处理(形成铬酸盐处理层) ・Electrolytic chromate treatment (formation of chromate treatment layer)

液体组成:K2Cr2O7:1~10g/公升、Zn:0~5g/公升 Liquid composition: K 2 Cr 2 O 7 : 1-10g/liter, Zn: 0-5g/liter

pH:2~4 pH: 2~4

温度:40℃ Temperature: 40°C

电流密度(Dk):1A/dm2 Current density (D k ): 1A/dm 2

时间:1.0秒 Time: 1.0 seconds

·硅烷偶合处理(形成硅烷偶合处理层) ・Silane coupling treatment (formation of silane coupling treatment layer)

通过在被处理面喷涂1.0体积%的3-环氧丙氧基丙基三甲氧基硅烷水溶液而进行硅烷偶合剂涂布处理后,在70℃以上200℃以下的环境中进行2秒钟以上的干燥,从而去除表面的水分。 After spraying 1.0% by volume of 3-glycidoxypropyltrimethoxysilane aqueous solution on the surface to be treated, the silane coupling agent coating treatment is carried out in an environment of 70°C to 200°C for more than 2 seconds. Dry to remove moisture from the surface.

·树脂层(例13、14、15) ・Resin layer (Example 13, 14, 15)

树脂层的涂布是使用凹版涂布法将硬化前的树脂涂布在极薄铜层侧表面后,使用刮刀将树脂涂膜的厚度调整为10μm,在200℃的干燥环境中一边使溶剂挥发一边使树脂成分硬化。再者,所使用的树脂是使用环氧树脂(DIC股份有限公司制造的双酚A型环氧树脂)。 The coating of the resin layer is to apply the uncured resin on the surface of the ultra-thin copper layer using the gravure coating method, adjust the thickness of the resin coating film to 10 μm with a doctor blade, and volatilize the solvent in a dry environment at 200°C While hardening the resin component. In addition, as the resin used, epoxy resin (bisphenol A type epoxy resin manufactured by DIC Corporation) was used.

再者,在例16中,也对与极薄铜层侧为相反侧的载体表面进行上述粗化处理(Cu-W合金镀敷)、耐热层、防锈层、铬酸盐处理层、硅烷偶合处理层的表面处理。 Furthermore, in Example 16, the above-mentioned roughening treatment (Cu-W alloy plating), heat-resistant layer, rust-proof layer, chromate treatment layer, Surface treatment of silane coupling treatment layer.

-加热处理- -Heat treatment-

接着,对各附载体铜箔进行下述加热处理来作为加热处理:在具有99.9%以上的纯度的氮气环境下,利用表2~4所记载的条件来进行加热处理。表2~4的升温速度是至初次到达热处理条件中所记载的温度(加热温度)为止的升温速度。热处理后的至常温为止的冷却时间为1~6小时。 Next, each copper foil with a carrier was heat-processed under the conditions described in Tables 2-4 in the nitrogen atmosphere which has a purity of 99.9% or more as heat processing. The temperature increase rates in Tables 2 to 4 are the temperature increase rates until reaching the temperature (heating temperature) described in the heat treatment conditions for the first time. The cooling time to normal temperature after the heat treatment is 1 to 6 hours.

又,关于例1~16,是在将附载体铜箔卷入至不锈钢制的中空管(外径11cm、厚度0.5cm)中的状态下进行加热处理。 Moreover, about Examples 1-16, it heat-processed in the state which wound up the copper foil with a carrier in the hollow tube (outer diameter 11cm, thickness 0.5cm) made of stainless steel.

又,关于例1~16,是将卷入该中空管时的张力分别设为表2~4所记载的设定而进行加热处理。 Moreover, about Examples 1-16, the tension|tensile_strength at the time of winding up the said hollow tube was made into the setting described in Tables 2-4, respectively, and it heat-processed.

又,将该中空管的旋转速度分别设为表2~4所记载的设定而进行加热处理。 Moreover, the rotation speed of this hollow tube was set to the setting described in Tables 2-4, respectively, and it heat-processed.

2.附载体铜箔的评价 2. Evaluation of copper foil with carrier

针对以上述方式制得的例1~16的附载体铜箔在加热处理前及加热处理后分别进行以下的评价试验。将评价结果示于表2~4。再者,关于表2~4的加热后的实验例的编号的记载,例如,“例1-1”~“例1-50”是表示分别将加热前的试样即“例1”进行加热后的试样。 The following evaluation tests were performed for the copper foils with a carrier of Examples 1 to 16 produced in the above manner, before the heat treatment and after the heat treatment, respectively. The evaluation results are shown in Tables 2-4. Furthermore, regarding the description of the numbers of the experimental examples after heating in Tables 2 to 4, for example, "Example 1-1" to "Example 1-50" indicate that the sample before heating, that is, "Example 1", was heated. after the sample.

-蚀刻液的润湿性评价- -Evaluation of wettability of etching solution-

在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔(除了具备树脂层者以外),使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%(剩余部分为水)的组成的蚀刻液,放置30秒后擦掉蚀刻液。由于硫酸-过氧化氢系蚀刻液会一边溶解表面处理层及其基底的极薄铜层而一边使润湿变大,因此可判断为若液滴的痕迹接近正圆则表面附近的蚀刻液的润湿性均匀,若为椭圆形则为不均匀。又,液滴的痕迹的最大直径愈大则蚀刻液的润湿愈好,可说是利用蚀刻液的去除性良好。 Place the copper foil with carrier (except those with resin layer) on the horizontal plane with the surface treatment layer on the ultra-thin copper foil side on top, and drop 30 μL of sulfuric acid 24% by weight-peroxide to one part using a pipette. An etching solution having a hydrogen content of 15% by weight (the remainder being water) was left to stand for 30 seconds, and then the etching solution was wiped off. Since the sulfuric acid-hydrogen peroxide-based etchant increases the wetting while dissolving the surface treatment layer and the ultra-thin copper layer underlying it, it can be judged that if the trace of the droplet is close to a perfect circle, the etchant of the etchant near the surface The wettability is uniform, and if it is oval, it is uneven. In addition, the larger the maximum diameter of the droplet trace, the better the wetting of the etching solution, and it can be said that the removability by the etching solution is good.

·润湿均匀性 · Wetting uniformity

此处,测定液滴的痕迹的最大直径与最小直径,若最大直径与最小直径的差在10mm以下,则评价为蚀刻液的润湿性十分均匀(表2~4:润湿均匀性的栏“○”),若在5mm以下,则评价为更进一步地均匀(表2~4:润湿均匀性的栏“◎”)。又,在液滴的痕迹的最大直径与最小直径的差比10mm大的情形时,评价为蚀刻液润湿性不够均匀(表2~4:润湿均匀性的栏“×”)。此处,表2~4的“润湿均匀性最大-最小”是利用“液滴的痕迹的最大直径(mm)-液滴的痕迹的最小直径(mm)”来算出。 Here, the maximum diameter and the minimum diameter of the trace of the droplet are measured, and if the difference between the maximum diameter and the minimum diameter is 10 mm or less, it is evaluated that the wettability of the etching solution is sufficiently uniform (Tables 2-4: Columns of wetting uniformity "◯"), and if it is 5 mm or less, it was evaluated as being more uniform (Tables 2 to 4: column "⊚" of wetting uniformity). Also, when the difference between the maximum diameter and the minimum diameter of the droplet traces was greater than 10 mm, it was evaluated that the wettability of the etchant was not uniform enough (Tables 2 to 4: "x" in the column of wettability uniformity). Here, "maximum wetting uniformity - minimum" in Tables 2 to 4 was calculated using "maximum diameter (mm) of trace of liquid droplet - minimum diameter (mm) of trace of liquid droplet".

·润湿性 · Wettability

测定液滴的痕迹的最大直径,若最大直径为25mm以上,则评价为蚀刻液润湿性够良好(表2~4:润湿性的栏“○”),若为35mm以上,则评价为更优选地良好(表2~4:润湿性的栏“◎”)。又,在最大直径未达25mm的情形,评价为蚀刻液润湿性不足(表2~4:润湿性的栏“×”)。此处,表2~4的“润湿性最大直径”是设为“液滴的痕迹的最大直径(mm)”。 The maximum diameter of the trace of the droplet was measured, and if the maximum diameter was 25 mm or more, it was evaluated as having good etching solution wettability (Tables 2-4: column "○" of wettability), and if it was 35 mm or more, it was evaluated as being More preferably good (Tables 2 to 4: column "⊚" of wettability). Moreover, when the maximum diameter was less than 25 mm, it evaluated that wettability of etchant was insufficient (Tables 2-4: column "x" of wettability). Here, the "maximum wettability diameter" in Tables 2 to 4 is defined as the "maximum diameter (mm) of the droplet trace".

再者,在上述的“润湿均匀性”与“润湿性”的评价中,将包围住液滴的痕迹的圆的最小直径设为“液滴的痕迹的最大直径”,将液滴的痕迹中所含有的圆的最大直径设为“液滴的痕迹的最小直径”。 In addition, in the above-mentioned evaluation of "uniformity of wetting" and "wettability", the minimum diameter of the circle surrounding the trace of the droplet is set as the "maximum diameter of the trace of the droplet", and the diameter of the droplet is The maximum diameter of the circles included in the trace is set to the "minimum diameter of the trace of the droplet".

-载体的拉伸强度的评价- -Evaluation of the tensile strength of the carrier-

以下述方式来测定在加热处理步骤后在常温下所测定的载体的拉伸强度。 The tensile strength of the carrier measured at normal temperature after the heat treatment step was measured in the following manner.

首先,对所制得的附载体铜箔剥离载体。接着,针对该载体根据JISZ2241并利用拉伸试验来求得抗拉强度(拉伸强度)。 First, the carrier is peeled off with respect to the produced copper foil with a carrier. Next, the tensile strength (tensile strength) of this support was calculated|required by the tensile test based on JISZ2241.

-电路直线(电路形成性)的评价- -Evaluation of circuit line (circuit formability)-

通过热压接将附载体铜箔的极薄铜箔侧贴合在双顺丁烯二酰亚胺三嗪树脂预浸体后,剥离载体而将其去除,接着,以L/S=21μm/9μm的方式在露出的极薄铜层表面形成宽度21μm的图案镀铜层(极薄铜层与图案镀铜层的厚度合计为16.5μm),再来,通过以下的蚀刻条件,对图案镀铜层进行快速蚀刻直至形成为电路上端的宽度为12~15μm的镀铜层从而形成电路。接着,如图5所示般,测定从电路上面观测到的电路下端的宽度的最大值与最小值的差(μm),求出测定5个部位而得的平均值。若最大値与最小値的差在2μm以下,则判断为具有良好的电路直线性,评价为◎。又,当该最大値与最小値的差超过2μm且在4μm以下时,则评价为〇。又,当该最大値与最小値的差超过4μm时,评价为×。 After bonding the ultra-thin copper foil side with a carrier to the bismaleimide triazine resin prepreg by thermocompression bonding, the carrier is peeled off to remove it, and then, at L/S=21μm/ A patterned copper plating layer with a width of 21 μm was formed on the surface of the exposed ultra-thin copper layer in a 9 μm manner (the total thickness of the ultra-thin copper layer and the patterned copper plating layer was 16.5 μm), and then the patterned copper plating layer was formed under the following etching conditions Rapid etching is performed until a copper plated layer with a width of 12 to 15 μm is formed at the upper end of the circuit to form a circuit. Next, as shown in FIG. 5 , the difference (μm) between the maximum value and the minimum value of the width of the lower end of the circuit observed from the upper surface of the circuit was measured, and an average value obtained by measuring five locations was obtained. When the difference between the maximum value and the minimum value is 2 μm or less, it is judged that the linearity of the circuit is good, and the evaluation is ⊚. Also, when the difference between the maximum value and the minimum value exceeds 2 μm and is 4 μm or less, the evaluation is 0. Also, when the difference between the maximum value and the minimum value exceeds 4 μm, it is evaluated as x.

(蚀刻条件) (etching conditions)

·蚀刻形式:喷雾蚀刻 ·Etching form: spray etching

·喷嘴:实心圆锥型 Nozzle: solid cone type

·喷压:0.10MPa ·Spray pressure: 0.10MPa

·蚀刻液温度:30℃ ·Etching solution temperature: 30°C

·蚀刻液组成: · Etching solution composition:

H2O218g/L H 2 O 2 18g/L

H2SO492g/L H2SO4 92g /L

Cu8g/L Cu8g/L

添加剂:JCU股份有限公司制造的FE-830IIW3C适量 Additive: appropriate amount of FE-830IIW3C manufactured by JCU Co., Ltd.

-皱褶的观察- - Observation of wrinkles -

目视观察各实验例的加热处理后的极薄铜层表面在长度5m的范围下有无皱褶。可确认到长度10cm以上的皱褶的部位为0个部位时,评价为◎,为1个部位时评价为〇,为2个部位时评价为△,为3个部位以上时评价为×。 The surface of the ultra-thin copper layer after the heat treatment of each experimental example was visually observed for the presence or absence of wrinkles in the range of length 5 m. If there are 0 spots where wrinkles with a length of 10 cm or more can be confirmed, then it is rated as ◎, when there is one spot, it is rated as 0, when there are two spots, it is rated as △, and when there are three or more spots, it is rated as ×.

-氧化程度- -Oxidation degree-

对于各实验例,在加热处理后,将1卷卷开,对第2卷的长度为1m的试样以目视进行观察。此时,氧化所导致的变色面积为5%以下者评价为◎,氧化所导致的变色面积超过5%且在10%以下者评价为○○,氧化所导致的变色面积超过10%且在15%以下者评价为〇,氧化所导致的变色面积超过15%且在20%以下者评价为△,氧化所导致的变色面积超过20%者评价为×。 For each experimental example, after the heat treatment, one roll was unrolled, and a sample having a length of 1 m in the second roll was observed visually. At this time, those whose discoloration area due to oxidation was 5% or less were evaluated as ◎, those whose discoloration area due to oxidation was more than 5% and less than 10% were evaluated as ○○, and those whose discoloration area due to oxidation exceeded 10% and less than 15% were evaluated as ◎. % or less was evaluated as 0, the area of discoloration due to oxidation was more than 15% and less than 20% was evaluated as △, and the area of discoloration due to oxidation was more than 20% was evaluated as x.

将试验条件及评价结果示于表1~4。 The test conditions and evaluation results are shown in Tables 1-4.

(评价结果) (Evaluation results)

例1-1~例1-48、例2-1~例2-3、例3-5~例3-13、例4-1~例16-1其电路直线性(电路形成性)皆良好。关于例1~例4、例7~例10、例14~例16,了解到:在加热处理前虽然电路直线性(电路形成性)不良,但是通过适当的加热处理,电路直线性(电路形成性)被改善。 Example 1-1 to Example 1-48, Example 2-1 to Example 2-3, Example 3-5 to Example 3-13, Example 4-1 to Example 16-1 have good circuit linearity (circuit formability) . Regarding Examples 1 to 4, Examples 7 to 10, and Examples 14 to 16, it was found that although the circuit linearity (circuit formability) was poor before heat treatment, the circuit linearity (circuit formability) was improved by appropriate heat treatment. sex) is improved.

再者,关于例1-1~例1-48、例2-1~例2-6、例3-5~例3-13、例4-1~例8-1、例11-1及例16-1,其蚀刻液的润湿性也皆良好。 Furthermore, regarding Example 1-1 to Example 1-48, Example 2-1 to Example 2-6, Example 3-5 to Example 3-13, Example 4-1 to Example 8-1, Example 11-1 and Example 16-1, the wettability of the etching solution was also good.

例1-49其加热处理的温度低,电路直线性(电路形成性)为不良。 In Example 1-49, the temperature of the heat treatment was low, and the circuit linearity (circuit formability) was poor.

例1-50其加热处理的时间短,电路直线性(电路形成性)为不良。 In Example 1-50, the heat treatment time was short, and the circuit linearity (circuit formability) was poor.

例2-4其加热处理的时间长,晶粒粗大化导致电路直线性(电路形成性)变得不良。 In Example 2-4, the heat treatment time was long, and the crystal grains were coarsened, resulting in poor circuit linearity (circuit formability).

例2-5及2-6其加热处理的温度高,晶粒粗大化导致电路直线性(电路形成性)变得不良。 In Examples 2-5 and 2-6, the heat treatment temperature was high, and the crystal grains were coarsened, resulting in poor circuit linearity (circuit formability).

例3-1~例3-4其加热处理的升温速度小,电路直线性(电路形成性)为不良。 In Examples 3-1 to 3-4, the heating rate of the heat treatment was small, and the circuit linearity (circuit formability) was poor.

Claims (46)

1.一种附载体铜箔的制造方法,其包含下述加热处理步骤:对依序具备载体、中间层、极薄铜层、包含硅烷偶合处理层的表面处理层的附载体铜箔,进行1小时~8小时的加热温度为100℃~220℃的加热处理,或1小时~6小时的加热温度为100℃~220℃的加热处理,或2小时~4小时的加热温度为160℃~220℃的加热处理。1. A method of manufacturing copper foil with a carrier, comprising the following heat treatment step: performing a heat treatment on a copper foil with a carrier sequentially provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer including a silane coupling treatment layer. Heat treatment at a heating temperature of 100°C to 220°C for 1 hour to 8 hours, or heat treatment at a heating temperature of 100°C to 220°C for 1 hour to 6 hours, or heat treatment at a heating temperature of 160°C to 2 hours to 4 hours Heat treatment at 220°C. 2.根据权利要求1所述的附载体铜箔的制造方法,其中,上述加热处理步骤后在常温下所测得的载体的拉伸强度为300MPa以上。2. The manufacturing method of the copper foil with a carrier according to claim 1, wherein the tensile strength of the carrier measured at normal temperature after the heat treatment step is 300 MPa or more. 3.一种附载体铜箔的制造方法,其包含下述加热处理步骤:对依序具备载体、中间层、极薄铜层、表面处理层的附载体铜箔,将到达加热温度为止的升温速度设为超过50℃/小时,进行1小时~8小时的加热温度为100℃~220℃的加热处理,或1小时~6小时的加热温度为100℃~220℃的加热处理,或2小时~4小时的加热温度为160℃~220℃的加热处理。3. A method of manufacturing copper foil with a carrier, which comprises the following heat treatment step: for the copper foil with a carrier sequentially provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer, the temperature of the copper foil with a carrier is increased until the heating temperature is reached. The speed is set to exceed 50°C/hour, and heat treatment is performed at a heating temperature of 100°C to 220°C for 1 hour to 8 hours, or heat treatment at a heating temperature of 100°C to 220°C for 1 hour to 6 hours, or 2 hours Heat treatment at a heating temperature of 160°C to 220°C for ~4 hours. 4.根据权利要求3所述的附载体铜箔的制造方法,其中,上述加热处理中的上述升温速度为200℃/小时以下。4. The manufacturing method of copper foil with a carrier according to claim 3, wherein the temperature increase rate in the heat treatment is 200° C./hour or less. 5.根据权利要求3所述的附载体铜箔的制造方法,其中,上述加热处理步骤后在常温下所测得的载体的拉伸强度为300MPa以上。5. The manufacturing method of copper foil with a carrier according to claim 3, wherein the tensile strength of the carrier measured at normal temperature after the heat treatment step is 300 MPa or more. 6.根据权利要求4所述的附载体铜箔的制造方法,其中,上述加热处理步骤后在常温下所测得的载体的拉伸强度为300MPa以上。6 . The manufacturing method of copper foil with a carrier according to claim 4 , wherein the tensile strength of the carrier measured at normal temperature after the heat treatment step is 300 MPa or more. 7.根据权利要求1至6中任一项所述的附载体铜箔的制造方法,其中,在上述加热处理步骤中,是在非活性气体环境下进行加热处理。The manufacturing method of the copper foil with a carrier in any one of Claims 1-6 which heat-processes in an inert gas atmosphere in the said heat treatment process. 8.根据权利要求1至6中任一项所述的附载体铜箔的制造方法,其中,在上述加热处理步骤中,在将附载体铜箔卷入至金属制的中空管中的状态下进行加热处理。8. The method of manufacturing copper foil with a carrier according to any one of claims 1 to 6, wherein, in the heat treatment step, the copper foil with a carrier is wrapped in a hollow metal tube under heat treatment. 9.根据权利要求8所述的附载体铜箔的制造方法,其中,在上述加热处理步骤中,将把附载体铜箔卷入至金属制的中空管中时的张力设为5~100kgf/m或20~100kgf/m从而进行加热处理。9. The method of manufacturing copper foil with a carrier according to claim 8, wherein in the heat treatment step, the tension at the time of winding the copper foil with a carrier into a metal hollow tube is 5 to 100 kgf /m or 20~100kgf/m for heat treatment. 10.根据权利要求8所述的附载体铜箔的制造方法,其中,在上述加热处理步骤中,在将附载体铜箔卷入至金属制的中空管中的状态下,一边以0.01~600旋转/小时的速度旋转上述中空管一边进行加热处理。10. The method of manufacturing copper foil with a carrier according to claim 8, wherein, in the heat treatment step, while the copper foil with a carrier is wrapped in a metal hollow tube, the copper foil with a carrier is heated at a temperature of 0.01 to Heat treatment was performed while rotating the hollow tube at a speed of 600 revolutions/hour. 11.根据权利要求9所述的附载体铜箔的制造方法,其中,在上述加热处理步骤中,在将附载体铜箔卷入至金属制的中空管中的状态下,一边以0.01~600旋转/小时的速度旋转上述中空管一边进行加热处理。11. The method of manufacturing copper foil with a carrier according to claim 9, wherein, in the heat treatment step, while the copper foil with a carrier is wrapped in a metal hollow tube, the copper foil with a carrier is heated at a temperature of 0.01 to Heat treatment was performed while rotating the hollow tube at a speed of 600 revolutions/hour. 12.根据权利要求1至6中任一项所述的附载体铜箔的制造方法,其中,上述加热处理前的附载体铜箔进一步在上述载体侧的表面依序具备中间层、极薄铜层。12. The method of manufacturing copper foil with a carrier according to any one of claims 1 to 6, wherein the copper foil with a carrier before the heat treatment further has an intermediate layer, an ultra-thin copper layer, and an ultra-thin copper layer on the surface of the carrier side in this order. layer. 13.根据权利要求1至6中任一项所述的附载体铜箔的制造方法,其中,上述加热处理前的附载体铜箔进一步在上述载体侧的表面具有表面处理层。The manufacturing method of the copper foil with a carrier as described in any one of Claims 1-6 with which the copper foil with a carrier before the said heat treatment further has a surface treatment layer on the surface by the side of the said carrier. 14.根据权利要求1至6中任一项所述的附载体铜箔的制造方法,其中,上述表面处理层包含粗化处理层。The manufacturing method of the copper foil with a carrier in any one of Claims 1-6 whose said surface treatment layer contains a roughening treatment layer. 15.根据权利要求14所述的附载体铜箔的制造方法,其中,在上述表面处理层为粗化处理层的表面进一步具有选自由耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层所构成的群中的一种以上的层。15. The method of manufacturing copper foil with a carrier according to claim 14, wherein the surface of the surface treatment layer which is a roughening treatment layer further has a surface selected from a heat-resistant layer, an antirust layer, a chromate treatment layer, and a silane treatment layer. Coupling deals with one or more layers in the group consisting of layers. 16.根据权利要求1至6中任一项所述的附载体铜箔的制造方法,其中,上述加热处理前的附载体铜箔在上述极薄铜层的表面具有选自由粗化处理层、耐热层、防锈层、铬酸盐处理层及硅烷偶合处理层所组成的群中的一层以上的层来作为表面处理层。16. The method of manufacturing copper foil with a carrier according to any one of claims 1 to 6, wherein the copper foil with a carrier before the heat treatment has a surface selected from a roughened layer, a roughened layer, and a surface of the ultra-thin copper layer. One or more layers in the group consisting of a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a silane-coupling-treated layer are used as the surface treatment layer. 17.根据权利要求1至6中任一项所述的附载体铜箔的制造方法,其中,上述加热处理前的附载体铜箔在上述表面处理层上具备树脂层。The manufacturing method of the copper foil with a carrier as described in any one of Claims 1-6 in which the copper foil with a carrier before the said heat process is equipped with a resin layer on the said surface treatment layer. 18.一种覆铜积层板的制造方法,其使用有通过权利要求1至17中任一项所述的附载体铜箔的制造方法所制得的附载体铜箔。The manufacturing method of a copper-clad laminated board using the copper foil with a carrier manufactured by the manufacturing method of the copper foil with a carrier as described in any one of Claims 1-17. 19.一种印刷配线板的制造方法,其使用有通过权利要求1至17中任一项所述的附载体铜箔的制造方法所制得的附载体铜箔。The manufacturing method of a printed wiring board using the copper foil with a carrier manufactured by the manufacturing method of the copper foil with a carrier as described in any one of Claims 1-17. 20.一种印刷配线板的制造方法,其包含以下步骤:20. A method of manufacturing a printed wiring board, comprising the steps of: 准备通过权利要求1至17中任一项所述的附载体铜箔的制造方法所制得的附载体铜箔与绝缘基板;preparing the copper foil with a carrier and the insulating substrate obtained by the manufacturing method of the copper foil with a carrier according to any one of claims 1 to 17; 将上述附载体铜箔与绝缘基板积层;及Laminate the above-mentioned copper foil with carrier and insulating substrate; and 在将上述附载体铜箔与绝缘基板积层后,经将上述附载体铜箔的载体剥离的步骤而形成覆铜积层板,After laminating the above-mentioned copper foil with a carrier and an insulating substrate, the step of peeling the carrier of the above-mentioned copper foil with a carrier is performed to form a copper-clad laminate, 其后,通过半加成法、减成法、部分加成法或改进半加成法中的任一方法形成电路。Thereafter, a circuit is formed by any one of semi-additive method, subtractive method, partial additive method, or modified semi-additive method. 21.一种印刷配线板的制造方法,其包含以下步骤:21. A method of manufacturing a printed wiring board, comprising the steps of: 在通过权利要求1至17中任一项所述的附载体铜箔的制造方法所制得的附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成电路;A circuit is formed on the side surface of the ultra-thin copper layer or the side surface of the carrier of the copper foil with a carrier obtained by the method of manufacturing copper foil with a carrier according to any one of claims 1 to 17; 以埋没上述电路的方式在上述附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成树脂层;Forming a resin layer on the surface of the ultra-thin copper layer side of the copper foil with a carrier or the surface of the carrier side so as to bury the circuit; 在上述树脂层上形成电路;forming a circuit on the above-mentioned resin layer; 在上述树脂层上形成电路后,剥离上述载体或上述极薄铜层;及After forming a circuit on the above resin layer, peeling off the above carrier or the above ultra-thin copper layer; and 在剥离上述载体后,去除上述极薄铜层或上述载体,由此使形成在上述极薄铜层侧表面或上述载体侧表面的埋没于上述树脂层的电路露出。After peeling off the carrier, the ultra-thin copper layer or the carrier is removed, thereby exposing the circuit formed on the ultra-thin copper layer-side surface or the carrier-side surface buried in the resin layer. 22.一种电子机器的制造方法,其使用有通过权利要求19至21中任一项所述的印刷配线板的制造方法所制得的印刷配线板。The manufacturing method of the electronic equipment which used the printed wiring board manufactured by the manufacturing method of the printed wiring board in any one of Claims 19-21. 23.一种附载体铜箔,其是通过权利要求1至17中任一项所述的附载体铜箔的制造方法而制得。Copper foil with a carrier obtained by the manufacturing method of the copper foil with a carrier as described in any one of Claims 1-17. 24.一种附载体铜箔,其依序具备载体、中间层、极薄铜层、包含硅烷偶合处理层的表面处理层,在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔,使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%,剩余部分为水的组成的蚀刻液,放置30秒后擦掉蚀刻液后,蚀刻液的痕迹的最大直径与最小直径的差为10mm以下,又,上述附载体铜箔不包括具备树脂层者。24. A copper foil with a carrier, which sequentially comprises a carrier, an intermediate layer, an ultra-thin copper layer, and a surface-treated layer including a silane coupling treatment layer, in which the surface-treated layer on the ultra-thin copper foil side is on top of the horizontal plane To place the copper foil with a carrier, use a pipette to drop 30 μL of an etching solution consisting of 24% by weight of sulfuric acid - 15% by weight of hydrogen peroxide, and the rest of which is water, and wipe off the etching solution after leaving it for 30 seconds. The difference between the maximum diameter and the minimum diameter of the trace of etching liquid is 10 mm or less, and the above-mentioned copper foil with a carrier does not include the thing provided with the resin layer. 25.根据权利要求24所述的附载体铜箔,其依序具备载体、中间层、极薄铜层、包含硅烷偶合处理层的表面处理层,在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔,使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%,剩余部分为水的组成的蚀刻液,放置30秒后擦掉蚀刻液后,蚀刻液的痕迹的最大直径为25mm以上,又,上述附载体铜箔不包括具备树脂层者。25. The copper foil with a carrier according to claim 24, which is sequentially provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer including a silane coupling treatment layer, and the surface treatment layer on the side of the ultra-thin copper foil on the horizontal plane Place the copper foil with the carrier on top of the layer, use a pipette to drip 30 μL of an etching solution consisting of 24% by weight sulfuric acid - 15% by weight hydrogen peroxide, and the rest is water, and wipe it off after 30 seconds. After the etchant is removed, the maximum diameter of the trace of the etchant is 25 mm or more, and the copper foil with a carrier does not include a resin layer. 26.一种附载体铜箔,其依序具备载体、中间层、极薄铜层、包含硅烷偶合处理层的表面处理层,在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔,使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%,剩余部分为水的组成的蚀刻液,放置30秒后擦掉蚀刻液后,蚀刻液的痕迹的最大直径为25mm以上,又,上述附载体铜箔不包括具备树脂层者。26. A copper foil with a carrier, which sequentially comprises a carrier, an intermediate layer, an ultra-thin copper layer, and a surface-treated layer including a silane coupling treatment layer, in which the surface-treated layer on the side of the ultra-thin copper foil is on top of the horizontal plane To place the copper foil with a carrier, use a pipette to drop 30 μL of an etching solution consisting of 24% by weight of sulfuric acid - 15% by weight of hydrogen peroxide, and the rest of which is water, and wipe off the etching solution after leaving it for 30 seconds. The maximum diameter of the trace of an etchant is 25 mm or more, and the said copper foil with a carrier does not include the thing provided with the resin layer. 27.一种附载体铜箔,其依序具备载体、中间层、极薄铜层、表面处理层,在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔,使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%,剩余部分为水的组成的蚀刻液,放置30秒后擦掉蚀刻液后,蚀刻液的痕迹的最大直径与最小直径的差为10mm以下,又,上述附载体铜箔不包括具备树脂层者。27. A copper foil with a carrier, which sequentially comprises a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer, and the copper foil with a carrier is placed on a horizontal plane with the surface treatment layer on the side of the ultra-thin copper foil on top , use a pipette to drip 30 μL of an etching solution consisting of 24% by weight sulfuric acid - 15% by weight hydrogen peroxide, and the rest is water. After leaving it for 30 seconds and wiping off the etching solution, the maximum The difference between the diameter and the minimum diameter is 10 mm or less, and the above-mentioned copper foil with a carrier does not include those provided with a resin layer. 28.根据权利要求27所述的附载体铜箔,其依序具备载体、中间层、极薄铜层、表面处理层,在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔,使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%,剩余部分为水的组成的蚀刻液,放置30秒后擦掉蚀刻液后,蚀刻液的痕迹的最大直径为25mm以上,又,上述附载体铜箔不包括具备树脂层者。28. The copper foil with a carrier according to claim 27, which is sequentially provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer. Place the copper foil with carrier, and drop 30 μL of an etching solution consisting of 24% by weight sulfuric acid - 15% by weight hydrogen peroxide, and the rest of water to one part using a pipette. The maximum diameter of the trace of the liquid is 25 mm or more, and the above-mentioned copper foil with a carrier does not include a resin layer. 29.一种附载体铜箔,其依序具备载体、中间层、极薄铜层、表面处理层,在水平面上以极薄铜箔侧的表面处理层在上面的方式来放置附载体铜箔,使用吸量管在一个部位滴加30μL具有硫酸24重量%-过氧化氢15重量%,剩余部分为水的组成的蚀刻液,放置30秒后擦掉蚀刻液后,蚀刻液的痕迹的最大直径为25mm以上,又,上述附载体铜箔不包括具备树脂层者。29. A copper foil with a carrier comprising a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer in this order, and placing the copper foil with a carrier on a horizontal plane with the surface treatment layer on the side of the ultra-thin copper foil on top , use a pipette to drip 30 μL of an etching solution consisting of 24% by weight sulfuric acid - 15% by weight hydrogen peroxide, and the rest is water. After leaving it for 30 seconds and wiping off the etching solution, the maximum The diameter is 25 mm or more, and the above-mentioned copper foil with a carrier does not include those provided with a resin layer. 30.根据权利要求24至29中任一项所述的附载体铜箔,其中,上述蚀刻液的痕迹的最大直径与最小直径的差为5mm以下。30 . The copper foil with a carrier according to claim 24 , wherein the difference between the maximum diameter and the minimum diameter of the trace of the etching solution is 5 mm or less. 31 . 31.根据权利要求24至29中任一项所述的附载体铜箔,其中,上述蚀刻液的痕迹的最大直径为35mm以上。31. The copper foil with a carrier according to any one of claims 24 to 29, wherein the trace of the etching solution has a maximum diameter of 35 mm or more. 32.根据权利要求30所述的附载体铜箔,其中,上述蚀刻液的痕迹的最大直径为35mm以上。32. The copper foil with a carrier according to claim 30, wherein the trace of the etching solution has a maximum diameter of 35 mm or more. 33.一种积层体,其是使用权利要求23至32中任一项所述的附载体铜箔而制得。The laminated body manufactured using the copper foil with a carrier as described in any one of Claims 23-32. 34.一种积层体,其含有权利要求23至32中任一项所述的附载体铜箔与树脂,上述附载体铜箔的端面的一部分或全部被上述树脂所覆盖。34. A laminate comprising the copper foil with a carrier according to any one of claims 23 to 32 and a resin, wherein part or all of the end faces of the copper foil with a carrier are covered with the resin. 35.一种积层体,其是将一个权利要求23至32中任一项所述的附载体铜箔自上述载体侧或上述表面处理层侧积层在另一个权利要求23至32中任一项所述的附载体铜箔的上述载体侧或上述表面处理层侧而成。35. A laminate comprising the copper foil with a carrier according to any one of claims 23 to 32, which is laminated from the side of the carrier or the side of the surface treatment layer to any one of claims 23 to 32. The said carrier side or the said surface treatment layer side of the said copper foil with a carrier of 1st item is formed. 36.根据权利要求35所述的积层体,其中,上述一个附载体铜箔的上述载体侧表面或上述表面处理层侧表面与上述另一个附载体铜箔的上述载体侧表面或上述表面处理层侧表面视需要经由接着剂直接积层而被构成。36. The laminate according to claim 35, wherein the carrier-side surface or the surface-treated layer-side surface of the one copper foil with a carrier is separated from the carrier-side surface or the surface treatment of the other copper foil with a carrier. The surface on the side of the layer is formed by direct lamination via an adhesive, if necessary. 37.根据权利要求35所述的积层体,其中,上述一个附载体铜箔的上述载体或上述表面处理层与上述另一个附载体铜箔的上述载体或上述表面处理层接合。37. The laminate according to claim 35, wherein the carrier or the surface treatment layer of the one copper foil with a carrier is bonded to the carrier or the surface treatment layer of the other copper foil with a carrier. 38.根据权利要求36所述的积层体,其中,上述一个附载体铜箔的上述载体或上述表面处理层与上述另一个附载体铜箔的上述载体或上述表面处理层接合。38. The laminate according to claim 36, wherein the carrier or the surface treatment layer of the one copper foil with a carrier is bonded to the carrier or the surface treatment layer of the other copper foil with a carrier. 39.根据权利要求33至38中任一项所述的积层体,其中,上述积层体的端面的一部分或全部被树脂覆盖。39. The laminate according to any one of claims 33 to 38, wherein a part or all of the end faces of the laminate are covered with a resin. 40.一种印刷配线板,其是使用权利要求23至32中任一项所述的附载体铜箔制造而成者。The printed wiring board manufactured using the copper foil with a carrier as described in any one of Claims 23-32. 41.一种电子机器,其是使用权利要求40所述的印刷配线板制造而成的。41. An electronic device manufactured using the printed wiring board according to claim 40. 42.一种印刷配线板的制造方法,其包含以下步骤:42. A method of manufacturing a printed wiring board, comprising the steps of: 准备权利要求23至32中任一项所述的附载体铜箔与绝缘基板;Prepare the copper foil with carrier and insulating substrate according to any one of claims 23 to 32; 将上述附载体铜箔与绝缘基板积层;及Laminate the above-mentioned copper foil with carrier and insulating substrate; and 在将上述附载体铜箔与绝缘基板积层后,经将上述附载体铜箔的载体剥离的步骤而形成覆铜积层板,After laminating the above-mentioned copper foil with a carrier and an insulating substrate, the step of peeling the carrier of the above-mentioned copper foil with a carrier is performed to form a copper-clad laminate, 其后,通过半加成法、减成法、部分加成法或改进半加成法中的任一方法形成电路。Thereafter, a circuit is formed by any one of semi-additive method, subtractive method, partial additive method, or modified semi-additive method. 43.一种印刷配线板的制造方法,其包含以下步骤:43. A method of manufacturing a printed wiring board, comprising the steps of: 在权利要求23至32中任一项所述的附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成电路;A circuit is formed on the side surface of the ultra-thin copper layer or the side surface of the carrier of the copper foil with a carrier according to any one of claims 23 to 32; 以埋没上述电路的方式在上述附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成树脂层;Forming a resin layer on the surface of the ultra-thin copper layer side of the copper foil with carrier or the surface of the carrier side so as to bury the circuit; 在形成上述树脂层后,剥离上述载体或上述极薄铜层;及After forming the above-mentioned resin layer, peeling off the above-mentioned carrier or the above-mentioned ultra-thin copper layer; and 在剥离上述载体或上述极薄铜层后,去除上述极薄铜层或上述载体,由此使形成在上述极薄铜层侧表面或上述载体侧表面的埋没于上述树脂层的电路露出。After the carrier or the ultra-thin copper layer is peeled off, the ultra-thin copper layer or the carrier is removed, thereby exposing the circuit formed on the ultra-thin copper layer side surface or the carrier-side surface buried in the resin layer. 44.一种印刷配线板的制造方法,其包含以下步骤:44. A method of manufacturing a printed wiring board, comprising the steps of: 在权利要求23至32中任一项所述的附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成电路;A circuit is formed on the side surface of the ultra-thin copper layer or the side surface of the carrier of the copper foil with a carrier according to any one of claims 23 to 32; 以埋没上述电路的方式在上述附载体铜箔的上述极薄铜层侧表面或上述载体侧表面形成树脂层;Forming a resin layer on the surface of the ultra-thin copper layer side of the copper foil with a carrier or the surface of the carrier side so as to bury the circuit; 在上述树脂层上形成电路;forming a circuit on the above-mentioned resin layer; 在上述树脂层上形成电路后,剥离上述载体或上述极薄铜层;及After forming a circuit on the above resin layer, peeling off the above carrier or the above ultra-thin copper layer; and 在剥离上述载体或上述极薄铜层后,去除上述极薄铜层或上述载体,由此使形成在上述极薄铜层侧表面或上述载体侧表面的埋没于上述树脂层的电路露出。After the carrier or the ultra-thin copper layer is peeled off, the ultra-thin copper layer or the carrier is removed, thereby exposing the circuit formed on the ultra-thin copper layer side surface or the carrier-side surface buried in the resin layer. 45.一种印刷配线板的制造方法,其包含以下步骤:45. A method of manufacturing a printed wiring board, comprising the steps of: 将权利要求23至32中任一项所述的附载体铜箔的上述极薄铜层侧表面或上述载体侧表面与树脂基板进行积层;Laminating the ultra-thin copper layer-side surface or the carrier-side surface of the copper foil with a carrier according to any one of claims 23 to 32 with a resin substrate; 在与上述附载体铜箔的积层有树脂基板的侧为相反侧的上述极薄铜层侧表面或上述载体侧表面至少设置1次树脂层和电路此两层;及At least one resin layer and a circuit are provided on the side surface of the ultra-thin copper layer or the surface of the carrier side opposite to the side of the copper foil with carrier on which the resin substrate is laminated; and 在形成上述树脂层及电路此两层后,从上述附载体铜箔剥离上述载体或上述极薄铜层。After forming two layers of the said resin layer and a circuit, the said carrier or the said ultra-thin copper layer are peeled from the said copper foil with a carrier. 46.一种印刷配线板的制造方法,其包含以下步骤:46. A method of manufacturing a printed wiring board, comprising the steps of: 将权利要求23至32中任一项所述的附载体铜箔的上述载体侧表面与树脂基板进行积层;Laminating the above-mentioned carrier-side surface of the copper foil with a carrier according to any one of claims 23 to 32 and a resin substrate; 在与上述附载体铜箔的积层有树脂基板的侧为相反侧的极薄铜层侧表面至少设置1次树脂层和电路此两层;及Provide at least two layers of a resin layer and a circuit on the surface of the ultra-thin copper layer side opposite to the side where the resin substrate is laminated of the above-mentioned copper foil with a carrier; and 在形成上述树脂层及电路此两层后,从上述附载体铜箔剥离上述极薄铜层。After forming two layers of the said resin layer and a circuit, the said ultra-thin copper layer is peeled from the said copper foil with a carrier.
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