CN105374664A - Preparation method of InP film composite substrate - Google Patents

Abstract

The invention provides a method for preparing an InP thin film composite substrate, comprising the steps of: providing an InP substrate, the InP substrate has an implanted surface, ion implantation is performed from the implanted surface, and the InP substrate is implanted at a preset depth Form a defect layer; then provide a supporting substrate, bond the implanted surface of the ion-implanted substrate with a supporting substrate with high mechanical strength and low density to form a composite structure; finally separate InP along the defect layer to form a high InP Thin Film Composite Substrates on Mechanically Strong Substrates. The present invention can form an InP film composite substrate with high mechanical strength through ion implantation and bonding, and the dislocation density in the film is obviously lower than that of the heteroepitaxial InP film, and many films can be cyclically separated from a piece of InP material , improve the utilization rate of InP materials, and reduce the cost of InP consumables. The use of a low-density support substrate can reduce the weight of the entire composite substrate, which is suitable for space applications.

Description

A kind of preparation method of InP film composite substrate

technical field

The invention belongs to the technical field of preparation of functional semiconductor materials, and relates to a method for preparing an InP thin film composite substrate, in particular to a method for preparing an InP thin film composite substrate with high mechanical strength by ion implantation and bonding technology.

Background technique

InP belongs to the second-generation semiconductor, which has the characteristics of high electron mobility and strong breakdown electric field, and is widely used in the production of high electron mobility devices. InP material is a direct bandgap semiconductor with a forbidden band width of 1.34eV. The luminescent wavelength corresponding to its alloy is very suitable for optical fiber communication. The InP-based quantum well structure has a high absorption efficiency for sunlight. Therefore, InP materials also have a wide range of applications in the optical communication and photovoltaic industries.

The manufacturing process of InP-based electronic devices is to first grow the active layer of the device on the InP substrate material by MBE or MOCVD, and then make the corresponding device on the active layer by microelectronic processing technology. For InP-based microwave devices, heterogeneous structures such as InAlAs/InGaAs are usually grown on InP substrates and high electron mobility materials are fabricated. For optoelectronic devices and photovoltaic devices, multilayer quantum well structures such as In _x Ga _1-x As _y P _1-y are usually grown on InP substrates to improve laser emission efficiency or photoelectric conversion efficiency. At the same time, multi-junction solar cells can be grown on InP-based substrates.

Although the InP material has a wide range of applications as a substrate material, the InP material has poor mechanical properties, is extremely fragile, and has a high price per piece. Therefore, the commonly used InP substrate is relatively thick and fragile during device fabrication, which reduces the utilization efficiency of the InP material and increases the cost of the InP substrate. In addition, due to the low mechanical strength of InP, the practical application of InP-based microwave devices, optoelectronic devices, and photovoltaic devices fabricated on InP substrates is limited.

Therefore, providing a new method for preparing an InP substrate is a problem to be solved by those skilled in the art.

Contents of the invention

In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing an InP thin film composite substrate, which is used to solve the problems caused by the expensive InP substrate material and the insufficient mechanical strength of the InP material in the prior art. Fragile problems during subsequent use.

In order to achieve the above purpose and other related purposes, the present invention provides a method for preparing an InP thin film composite substrate, the preparation method at least comprising:

1) providing an InP substrate, the InP substrate has an implanted surface, ion implantation is performed from the implanted surface, and a defect layer is formed at a predetermined depth of the InP substrate;

2) providing a supporting substrate, and bonding the injection surface to the supporting substrate;

3) peeling off from the defective layer to obtain an InP thin film composite substrate.

As an optimized solution of the preparation method of the InP thin film composite substrate of the present invention, in the step 1), the ions implanted into the InP substrate from the implanted surface are H ions or He ions.

As an optimized solution of the preparation method of the InP thin film composite substrate of the present invention, during the ion implantation process, the temperature of the InP substrate is kept between -50°C and 300°C.

As an optimized solution of the preparation method of the InP thin film composite substrate of the present invention, the implantation dose of the H ions or He ions is between 1E16cm ⁻² and 1E18cm ⁻² .

As an optimized solution of the preparation method of the InP thin film composite substrate of the present invention, in the step 1), the depth of ion implantation into the InP substrate to form a defect layer ranges from 10 nm to 50 μm.

As an optimized solution of the preparation method of the InP thin film composite substrate of the present invention, in the step 2), the supporting substrate is silicon, sapphire, silicon carbide, diamond, gallium nitride, gallium arsenide or glass.

As an optimized solution of the preparation method of the InP thin film composite substrate of the present invention, the supporting substrate is a crystal, polycrystalline or amorphous material.

As an optimized solution of the preparation method of the InP thin film composite substrate of the present invention, in the step 2), the bonding method is direct bonding, dielectric layer bonding, metal bonding or anodic bonding.

As an optimized solution of the preparation method of the InP thin film composite substrate of the present invention, the medium layer bonding is growth medium layer bonding, polymer bonding, molten glass bonding or spin-on-glass bonding.

As an optimized solution of the preparation method of the InP thin film composite substrate of the present invention, in the step 3), the InP substrate material is peeled off from the defect layer by heating and annealing.

As an optimized scheme of the preparation method of the InP thin film composite substrate of the present invention, the heating annealing is direct high-temperature annealing or low-temperature-high-temperature annealing.

As an optimized solution for the preparation method of the InP thin film composite substrate of the present invention, the temperature range of the direct high-temperature annealing is 200° C. to 800° C., and the annealing time is 10 seconds to 24 hours.

As an optimized solution for the preparation method of the InP thin film composite substrate of the present invention, the low-temperature-high-temperature annealing method is to perform low-temperature pre-annealing and then high-temperature post-annealing, wherein the temperature range of the low-temperature pre-annealing is room temperature to 250°C, the annealing time is 1 minute to 24 hours; the temperature range of the post-high temperature annealing is 200-800°C, and the annealing time is 10 seconds to 24 hours

As mentioned above, the preparation method of the InP thin film composite substrate of the present invention includes the steps of: first providing an InP substrate, the InP substrate has an implanted surface, ion implantation is performed from the implanted surface, and A defect layer is formed at a predetermined depth; then a support substrate is provided, and the injection surface is bonded to the support substrate; finally, the defect layer is peeled off to obtain an InP film composite substrate. By ion implantation, the thickness of the obtained InP film can be adjusted. The preparation method of the present invention transfers the InP thin film to a substrate with high mechanical strength by bonding technology, which can significantly improve the mechanical strength of the InP thin film, and the formed InP thin film with high mechanical strength is not fragile during processing and subsequent use crack. The remaining InP material after stripping can also be recycled to improve the utilization rate of InP material and reduce the cost of InP consumables. At the same time, since the density of InP is greater than that of the supporting substrate, the formed composite substrate can effectively reduce the weight of the entire device, and is more suitable as a substrate for epitaxial growth of solar cell structures for space devices.

Description of drawings

Fig. 1 is a process flow chart of the preparation method of the InP thin film composite substrate of the present invention.

Fig. 2 is a schematic diagram of the structure presented in step 1) of the preparation method of the InP thin film composite substrate of the present invention.

Fig. 3 is a schematic diagram of the structure presented in step 2) of the preparation method of the InP thin film composite substrate of the present invention.

Fig. 4 is a schematic structural diagram presented in step 3) of the preparation method of the InP thin film composite substrate of the present invention.

Component designation description

1InP substrate

11 injection surface

12InP film

13 defective layers

14InP substrate remaining material

21 supporting substrate

31InP thin film composite substrate

detailed description

Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

Please refer to accompanying drawings 1 to 4. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the component layout type may also be more complicated.

The present invention provides a kind of preparation method of bright InP film composite substrate, as shown in Figure 1, described preparation method comprises the following steps at least:

S1, providing an InP substrate, the InP substrate has an implanted surface, ion implantation is performed from the implanted surface, and a defect layer is formed at a predetermined depth of the InP substrate;

S2, providing a supporting substrate, and bonding the injection surface to the supporting substrate;

S3, peeling off from the defective layer to obtain an InP thin film composite substrate.

The preparation method of the InP thin film composite substrate of the present invention will be described in detail below in conjunction with specific drawings.

First execute step S1, please refer to accompanying drawing 2, provide InP substrate 1, described InP substrate 1 has implantation surface 11, carries out ion implantation from described implantation surface 11, at the preset depth of described InP substrate 1 A defect layer 13 is formed.

The InP substrate 1 has two opposite surfaces, upper and lower, wherein the upper surface is used as the implantation surface 11 for ion implantation, as shown in FIG. 2 . As an example, the InP substrate 1 may be a commercialized InP single crystal wafer.

The ion species for ion implantation into the InP substrate 1 may be H ions or He ions, and of course, other suitable ion species may also be used, which is not limited here. The energy of the implanted ions corresponds to the thickness of the expected InP film 12 (i.e. the depth of the defect layer 13). In other words, the greater the energy of the implanted ions, the deeper the defect layer 13 is formed, and the subsequent peeling obtains the thickness of the InP film 12 The thicker the thickness is, on the contrary, the shallower the defect layer 13 is formed, and the thinner the thickness of the InP thin film 12 obtained after peeling off is. In this embodiment, the implantation dose of the H ions or He ions is between 1E16 cm ⁻² and 1E18 cm ⁻² , and the defect layer 13 formed has a depth ranging from 10 nm to 50 μm.

In addition, it should be noted that during the ion implantation process, the temperature of the InP substrate 1 should be kept between -50°C and 300°C. Preferably, during the implantation process, the temperature of the InP substrate 1 can be kept below 0°C or the temperature can be raised to between 100 and 300°C. At this time, the concentration of implanted ions in the InP substrate 1 will exhibit a Gaussian distribution. , and introduce crystal defects into the material to form a defect layer 13 .

Then step S2 is performed, referring to FIG. 3 , providing a supporting substrate 21 , and bonding the injection surface 11 to the supporting substrate 21 .

The supporting substrate 21 may be sapphire, silicon carbide, diamond, gallium nitride, gallium arsenide, or glass. In addition, the supporting substrate 21 may be crystal, polycrystalline or amorphous material of the above materials. In this embodiment, the supporting substrate 21 is selected as sapphire crystal material.

In this step, the method of bonding can be chosen to use methods such as direct bonding, dielectric layer bonding, metal bonding, or anodic bonding. The dielectric layer bonding includes methods such as growth medium layer bonding, fusion glass bonding, and spin-on-glass bonding. The above bonding methods are all conventional bonding methods, and will not be further described here.

The injection surface 11 and one surface of the support substrate 21 are firmly bonded by the above bonding method.

Finally, step S3 is executed, please refer to FIG. 4 , and the defective layer 13 is peeled off to obtain an InP thin film composite substrate 31 .

The defective layer 13 can be peeled off by heating and annealing. The heating annealing method is a single direct high-temperature annealing or a combined low-temperature-high-temperature annealing. If direct high-temperature annealing is used, the annealing temperature ranges from 200° C. to 800° C., and the annealing time ranges from 10 seconds to 24 hours. Preferably, the temperature of direct high-temperature annealing is 250° C. to 600° C., and the annealing time is 12 hours to 24 hours.

During the annealing process, if high temperature annealing is used directly, the implanted ions (H or He, etc.) will diffuse and combine with defects in the material. At the same time, defects during implantation will accumulate due to the Oswald effect. During the annealing process, the accumulation of H or He will increase the pressure inside the defect, resulting in the breakage of chemical bonds and the value addition of defects, forming platform-type defects at the defect layer, and finally leading to the peeling off of the InP film.

If the composite annealing method combining low temperature and high temperature is adopted, low temperature pre-annealing is performed first and then high temperature post-annealing is performed, wherein the temperature range of the low temperature pre-annealing is from room temperature to 250°C, and the annealing time is from 1 minute to 24 hours; The temperature range of the high temperature post-annealing is 200-800° C., and the annealing time is 10 seconds to 24 hours. Preferably, the temperature range of the high temperature post-annealing is 250-600° C., and the annealing time is 10 seconds to 10 hours.

In the annealing process, if a composite annealing process combining low-temperature pre-annealing and high-temperature post-annealing is used. Low temperature pre-annealing will promote the diffusion of H or He in the material and combine with the defects in the material, but this process will not lead to the exfoliation of the material. During the high-temperature post-annealing process, the H or He that has been combined with the material defect will cause the pressure inside the defect to increase rapidly, and the platform-type defect will appear and cause the peeling of the InP film. Compared with the direct annealing process, the composite annealing process combining low-temperature pre-annealing and high-temperature post-annealing can shorten the annealing time.

In this embodiment, a composite annealing method combining low temperature and high temperature is adopted, first performing low temperature pre-annealing at 150° C. for 5 hours, and then performing high temperature post-annealing at 300° C. for 1 hour. The formed InP thin film composite substrate 31 includes a supporting substrate 21 and an InP thin film 12 formed on the supporting substrate 21 . After peeling off, the defect layer is very thin, and it is also an InP material.

It should also be noted that after the InP thin film 12 is transferred to the support substrate 21, the remainder 14 of the InP substrate can be recycled after being processed, that is, it can continue to be used as the InP substrate 1 in FIG. 2 .

The transferred InP thin film composite substrate 31 has good mechanical properties, and can utilize MBE or MOCVD to epitaxially grow high-mobility heterojunctions, lasers, detectors and photovoltaic devices on the obtained InP thin film composite substrate 31. Multilayer quantum well structure and so on.

In summary, the present invention provides a method for preparing an InP thin film composite substrate, comprising the steps of: first providing an InP substrate, the InP substrate has an implanted surface, ion implantation is performed from the implanted surface, and the InP A defect layer is formed at a preset depth of the substrate; then a support substrate is provided, and the injection surface is bonded to the support substrate; finally, the defect layer is peeled off to obtain an InP film composite substrate. By ion implantation, the thickness of the obtained InP film can be adjusted. The preparation method of the present invention transfers the InP thin film to a substrate with high mechanical strength by bonding technology, which can significantly improve the mechanical strength of the InP thin film, and the formed InP thin film with high mechanical strength is not fragile during processing and subsequent use crack. The remaining InP material after stripping can also be recycled to improve the utilization rate of InP material and reduce the cost of InP consumables. At the same time, since the density of InP is greater than that of the supporting substrate, the formed composite substrate can effectively reduce the weight of the entire device, and is more suitable as a substrate for epitaxial growth of solar cell structures for space devices.

Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.

The above-mentioned embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed in the present invention shall still be covered by the claims of the present invention.

Claims (13)

1. a preparation method for InP Film laminated substrate, is characterized in that, described preparation method at least comprises:

1) provide InP substrate, described InP substrate has injection face, carries out ion implantation from described injection face, forms defect layer at the predetermined depth place of described InP substrate;

2) substrate is provided support, by described injection face and described support substrates bonding;

3) peel off from described defect layer, obtain InP Film laminated substrate.

2. the preparation method of InP Film laminated substrate according to claim 1, is characterized in that: described step 1) in, the ion injecting InP substrate from described injection face is H ion or He ion.

3. the preparation method of InP Film laminated substrate according to claim 1 and 2, is characterized in that: in described ion implantation process, and described InP substrate temperature remains between-50 DEG C ~ 300 DEG C.

4. the preparation method of InP Film laminated substrate according to claim 2, is characterized in that: the implantation dosage of described H ion or He ion is 1E16cm ^-2~ 1E18cm ^-2between.

5. the preparation method of InP Film laminated substrate according to claim 1, is characterized in that: described step 1) in, the depth bounds forming defect layer in ion implantation InP substrate is 10nm to 50 μm.

6. the preparation method of InP Film laminated substrate according to claim 1, is characterized in that: described step 2) in, described support substrates is silicon, sapphire, carborundum, diamond, gallium nitride, GaAs or glass.

7. the preparation method of InP Film laminated substrate according to claim 6, is characterized in that: described support substrates is crystal, polycrystalline or non-crystalline material.

8. the preparation method of InP Film laminated substrate according to claim 1, is characterized in that: described step 2) in, the method for bonding is Direct Bonding, dielectric layer bonding, metal bonding or anode linkage.

9. the preparation method of InP Film laminated substrate according to claim 8, is characterized in that: described dielectric layer bonding is growth dielectric layer bonding, polymer-bound, melten glass bonding or spin-coating glass bonding.

10. the preparation method of InP Film laminated substrate according to claim 1, is characterized in that: described step 3) in, by the mode of heating anneal, InP substrate material is peeled off from described defect layer.

The preparation method of 11. InP Film laminated substrates according to claim 10, is characterized in that: described heating anneal is direct high annealing or hypo-hyperthermia annealing.

The preparation method of 12. InP Film laminated substrates according to claim 11, is characterized in that: adopt the temperature range of described direct high annealing to be 200 DEG C ~ 800 DEG C, annealing time is 10 seconds to 24 hours.

The preparation method of 13. InP Film laminated substrates according to claim 11, it is characterized in that: adopt described hypo-hyperthermia annealing way for first carrying out low temperature preannealing carries out high temperature after annealing again, wherein, the temperature range of described low temperature preannealing is room temperature to 250 DEG C, and annealing time is 1 minute to 24 hours; The temperature range of described high temperature after annealing is 200 ~ 800 DEG C, and annealing time is 10 seconds to 24 hours.