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CN105372307A - Preparation method and application of electrode for detecting transgenic CaMV35S promoter - Google Patents

Preparation method and application of electrode for detecting transgenic CaMV35S promoter Download PDF

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CN105372307A
CN105372307A CN201510848286.3A CN201510848286A CN105372307A CN 105372307 A CN105372307 A CN 105372307A CN 201510848286 A CN201510848286 A CN 201510848286A CN 105372307 A CN105372307 A CN 105372307A
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CN105372307B (en
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李雅琪
王坤
蔡建荣
孙力
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Jiangsu University
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Abstract

本发明提供了一种检测转基因CaMV35S启动子电极的制备方法级用途,包括:还原氧化石墨烯/金纳米复合材料RGO/Au的制备步骤;硅@碲化镉纳米复合材料Si@CdTe的制备步骤;在ITO电极上制备探针1(Probe1)的步骤;向探针1(Probe1)修饰目标DNA(t-DNA)CaMV35S启动子的步骤;向目标DNA(t-DNA)CaMV35S启动子修饰探针2(Probe2)的步骤。本发明通过rGO/Au?NPs和Si@CdTe两端双重信号放大,实现了对转基因CaMV35S启动子的灵敏检测,在0.05~100pM的浓度区间内,CaMV35S浓度与光电流呈现良好的线性关系,检出限可达0.017pM。

The invention provides a preparation method-level application for detecting transgenic CaMV35S promoter electrodes, including: the preparation steps of the reduced graphene oxide/gold nanocomposite material RGO/Au; the preparation steps of the silicon@cadmium telluride nanocomposite material Si@CdTe ; the step of preparing probe 1 (Probe1) on the ITO electrode; the step of modifying the target DNA (t-DNA) CaMV35S promoter to the probe 1 (Probe1); modifying the probe to the target DNA (t-DNA) CaMV35S promoter 2 (Probe2) steps. The present invention adopts rGO/Au? The dual signal amplification at both ends of NPs and Si@CdTe realized the sensitive detection of the transgenic CaMV35S promoter. In the concentration range of 0.05-100pM, the concentration of CaMV35S showed a good linear relationship with the photocurrent, and the detection limit could reach 0.017pM.

Description

一种检测转基因CaMV35S启动子的电极的制备方法及用途Preparation method and application of an electrode for detecting transgenic CaMV35S promoter

技术领域technical field

本发明涉及电化学用电极的制备领域,具体指一种检测转基因CaMV35S启动子的电极的制备方法及用途。The invention relates to the field of preparation of electrochemical electrodes, in particular to a preparation method and application of an electrode for detecting a transgenic CaMV35S promoter.

背景技术Background technique

转基因作物(GeneticallyModifiedCrops,简称GMC)是指利用生物技术,把从动物、植物或微生物等生物体中经鉴定、分离的目的基因插入植物基因组中,改变其遗传组成,产生新的农艺性状的植物。自1994年转基因番茄在美国的首次商业化以来,生物技术已被广泛用于现代农业。目前全球批准商业化种植的转基因生物已有100多种,种植转基因作物的国家有29个,转基因作物的种植面积也由1996年的170万hm2增加至2011年的16000万hm2。很多国家根据将已批准的部分转基因作物作为食品或饲料的生产原料,与此同时转基因产品的安全性受到了广泛关注。Genetically Modified Crops (GMC for short) refers to the use of biotechnology to insert target genes identified and isolated from animals, plants or microorganisms into the plant genome to change its genetic composition and produce new agronomic traits. Since the first commercialization of genetically modified tomatoes in the United States in 1994, biotechnology has been widely used in modern agriculture. At present, there are more than 100 kinds of genetically modified organisms approved for commercial planting in the world, and 29 countries grow genetically modified crops. Many countries use some of the approved genetically modified crops as raw materials for food or feed production, and at the same time, the safety of genetically modified products has received widespread attention.

目前转基因检测方法主要是基于外源蛋白靶标的检测和基于核酸的检测。以外源蛋白为靶标的检测方法是基于抗体对抗原的特异性识别,主要有酶联免疫吸附法(ELISA)、免疫试纸条法和蛋白质芯片,但是这些方法背景信号高、蛋白质活性难以长久保持、开发特异性抗体的成本高、加工过的转基因产品其蛋白质发生变性而无法进行检测。基于核酸的检测方法最常用的是聚合酶链式反应(PCR)是最常用的转基因检测方法,但样品需要量大,操作繁琐,耗时,结果的准确性易受假阳性和假阴性的影响。Currently, transgenic detection methods are mainly based on exogenous protein target detection and nucleic acid-based detection. Detection methods targeting exogenous proteins are based on the specific recognition of antigens by antibodies, mainly including enzyme-linked immunosorbent assay (ELISA), immunoassay strips and protein chips, but these methods have high background signals and difficult to maintain protein activity for a long time 1. The cost of developing specific antibodies is high, and the protein of processed transgenic products is denatured and cannot be detected. The most commonly used nucleic acid-based detection method is polymerase chain reaction (PCR), which is the most commonly used detection method for transgenics, but it requires a large amount of samples, cumbersome operations, time-consuming, and the accuracy of the results is easily affected by false positives and false negatives .

石墨烯具有更高的机械强度,更大的比表面积以及更低廉的制备成本,这些特点使得石墨烯成为了新的优良载体,而纳米金(AuNPs)和石墨烯形成的复合材料,不只拥有原本优异性能,如大的比表面积、出色的导电性、催化性,以及优良的化学稳定性等,而且两组分之间还存在着协同作用,因此极大地改善了复合材料的性能也使得石墨烯/金纳米粒子复合物在催化、生物传感器、光谱学、能量存储等领域展现出许多优异的性能和潜在的应用价值。Graphene has higher mechanical strength, larger specific surface area and lower preparation cost. These characteristics make graphene a new excellent carrier, and the composite material formed by gold nanoparticles (AuNPs) and graphene not only has the original Excellent properties, such as large specific surface area, excellent electrical conductivity, catalytic performance, and excellent chemical stability, etc., and there is a synergistic effect between the two components, thus greatly improving the performance of the composite material and making graphene Au/AuNP composites exhibit many excellent properties and potential applications in the fields of catalysis, biosensors, spectroscopy, and energy storage.

碲化镉量子点(CdTeQDs)是一种半导体纳米材料,通过调节粒径,可以得到从整个可见光波段到紫外光波段的禁带宽度,具有大的载流子移动率,高的光吸收特性和热稳定性等,在紫外光或电子激发下能产生高效的发光。在光电性质方面,不仅具有良好的发光性能,而且还是好的电子受体材料,因而在电致发光器件和光电电池器件方面都得到广泛的研究和应用。Cadmium telluride quantum dots (CdTeQDs) are semiconductor nanomaterials. By adjusting the particle size, the band gap from the entire visible light band to the ultraviolet light band can be obtained. It has a large carrier mobility, high light absorption characteristics and Thermal stability, etc., can produce high-efficiency luminescence under ultraviolet light or electronic excitation. In terms of photoelectric properties, it not only has good luminescent performance, but also is a good electron acceptor material, so it has been widely studied and applied in electroluminescent devices and photovoltaic cell devices.

二氧化硅纳米球具有小尺寸、水溶性良好、比表面积大、生物相容性好、无毒且能和多种生物分子偶联等优点,是量子点的理想载体。Silica nanospheres have the advantages of small size, good water solubility, large specific surface area, good biocompatibility, non-toxicity and the ability to couple with a variety of biomolecules, and are ideal carriers for quantum dots.

光致电化学传感器是一种以光能作为激发能量,电信号作为检测信号的传感器。A photoelectrochemical sensor is a sensor that uses light energy as the excitation energy and an electrical signal as the detection signal.

本发明以碲化镉包覆的硅球(SiO2@CdTe)为光电信号标志物。首先将ITO电极表面依次修饰上石墨烯/金(rGO/AuNPs)、DNA探针1(Probe1)、目标DNA(T-DNA)、DNA探针2(Probe2)-碲化镉包覆的硅球(SiO2@CdTe),构建的光电化学传感器大大提高了灵敏度。该检测体系以ITO为工作电极、饱和甘汞电极为参比电极,铂电极为对电极,以光电流为检测信号,通过对不同浓度的目标DNA检测,建立标准曲线,以达到对作物及产品定量检测的目的。In the invention, silicon balls (SiO 2 @CdTe) coated with cadmium telluride are used as photoelectric signal markers. First, the surface of the ITO electrode is sequentially modified with graphene/gold (rGO/AuNPs), DNA probe 1 (Probe1), target DNA (T-DNA), DNA probe 2 (Probe2)-CdTe-coated silicon balls (SiO 2 @CdTe), the constructed photoelectrochemical sensor greatly improves the sensitivity. The detection system uses ITO as the working electrode, the saturated calomel electrode as the reference electrode, the platinum electrode as the counter electrode, and the photocurrent as the detection signal. Through the detection of different concentrations of target DNA, a standard curve is established to achieve the accuracy of crops and products. purpose of quantitative testing.

发明内容Contents of the invention

本发明旨在发明一种集免标记、高灵敏度、高选择性、简单易操作等优点为一体的光电化学传感器,提供一种制备工艺简单,灵敏度高,测量范围宽,成本低的定量检测含有CaMV35S启动子转基因作物及产品的方法,解决现有检测成本高、检测方案复杂、检测时间过长、灵敏度较低的难题。The present invention aims at inventing a photoelectrochemical sensor integrating the advantages of label-free, high sensitivity, high selectivity, simple and easy operation, etc., and provides a quantitative detection containing The method of CaMV35S promoter transgenic crops and products solves the existing problems of high detection cost, complicated detection scheme, long detection time and low sensitivity.

本发明是通过以下技术方案实现的:The present invention is achieved through the following technical solutions:

步骤1、还原氧化石墨烯/金纳米复合材料RGO/Au的制备步骤;Step 1, the preparation step of reduced graphene oxide/gold nanocomposite material RGO/Au;

步骤2、二氧化硅纳米微球@碲化镉纳米复合材料SiO2@CdTe的制备步骤;Step 2. Preparation steps of silica nanospheres@cadmium telluride nanocomposite material SiO 2 @CdTe;

步骤3、在ITO电极上制备探针1(Probe1)的步骤:将RGO/Au分散于蒸馏水中得到RGO/Au分散液后滴涂于ITO电极表面的修饰区,进行干燥;取溶有探针1的tris-HCl缓冲液滴涂于所述干燥后的RGO/Au表面,进行干燥;冲洗电极表面后,进行干燥,得到ITO-rGO/Au-Probe1;Step 3. The step of preparing probe 1 (Probe1) on the ITO electrode: disperse RGO/Au in distilled water to obtain the RGO/Au dispersion liquid, then drop-coat it on the modified area on the surface of the ITO electrode, and dry it; take the dissolved probe 1 of tris-HCl buffer solution was drip-coated on the surface of the dried RGO/Au and dried; after rinsing the surface of the electrode, it was dried to obtain ITO-rGO/Au-Probe1;

步骤4、向探针1修饰目标DNACaMV35S启动子的步骤:取溶有目标DNACaMV35S启动子的tris-HCl缓冲液滴涂于所述ITO-rGO/Au-Probe1的表面,室温孵育,待干燥后冲洗电极,得到ITO-rGO/Au-Probe1-t-DNA;Step 4. The step of modifying the target DNACaMV35S promoter to probe 1: take the tris-HCl buffer dissolved in the target DNACaMV35S promoter and apply it on the surface of the ITO-rGO/Au-Probe1, incubate at room temperature, rinse after drying Electrode, get ITO-rGO/Au-Probe1-t-DNA;

步骤5、向目标DNACaMV35S启动子修饰探针2的步骤:将SiO2@CdTe的蒸馏水分散液和N-羟基琥珀酰亚胺的水溶液加入到乙基-(3-二甲基氨丙基)碳二亚胺盐酸盐的水溶液中进行反应,反应结束后,离心并洗涤得到固体A,将所得固体A加入到溶有探针2的tris-HCl缓冲液中,得到混合液A,振荡反应一段时间后,得到固体产物Probe2/SiO2@CdTe;将Probe2/SiO2@CdTe分散于蒸馏水中后,得到混合液B,将混合液B滴涂于所述ITO-rGO/Au-Probe1-t-DNA表面,孵育,待干燥后冲洗电极表面,得到ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO2@CdTe。Step 5. The step of modifying the probe 2 to the target DNACaMV35S promoter: adding the distilled water dispersion of SiO 2 @CdTe and the aqueous solution of N-hydroxysuccinimide to the ethyl-(3-dimethylaminopropyl) carbon The reaction is carried out in an aqueous solution of diimine hydrochloride. After the reaction, centrifuge and wash to obtain solid A. Add the obtained solid A to the tris-HCl buffer solution in which probe 2 is dissolved to obtain mixed solution A, and shake for a period of reaction. After a period of time, the solid product Probe2/SiO 2 @CdTe was obtained; after Probe2/SiO 2 @CdTe was dispersed in distilled water, a mixed solution B was obtained, and the mixed solution B was drop-coated on the ITO-rGO/Au-Probe1-t- Incubate on the DNA surface, rinse the electrode surface after drying, and obtain ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO 2 @CdTe.

步骤3中,RGO/Au分散液的浓度为1~4mg/mL,滴涂于ITO表面的RGO/Au分散液的量为20μL;溶有Probe1的tris-HCl缓冲液用量为10μL,探针1的浓度为4μM。In step 3, the concentration of the RGO/Au dispersion is 1-4 mg/mL, and the amount of the RGO/Au dispersion that is drop-coated on the ITO surface is 20 μL; The concentration is 4 μM.

步骤4中,溶有目标DNACaMV35S启动子的tris-HCl缓冲液用量为20μL,目标DNA的浓度为0.05pM~100pM。In step 4, the amount of tris-HCl buffer dissolved with the target DNACaMV35S promoter is 20 μL, and the concentration of the target DNA is 0.05 pM-100 pM.

步骤5中,所用的SiO2@CdTe的蒸馏水分散液、N-羟基琥珀酰亚胺的水溶液、乙基-(3-二甲基氨丙基)碳二亚胺盐酸盐的水溶液的体积比25:1:1;所用的SiO2@CdTe的蒸馏水分散液的浓度为1mg/mL,N-羟基琥珀酰亚胺的水溶液的浓度为0.2M,乙基-(3-二甲基氨丙基)碳二亚胺盐酸盐的水溶液的浓度为0.4M;混合液A中,所用的溶有探针2的tris-HCl缓冲液中探针2的浓度为10μM,且混合液A中,每100μLtris-HCl缓冲液中含有1mgSiO2@CdTe;混合液B中,Probe2/SiO2@CdTe的浓度为4μM。In step 5, the volume ratio of the distilled water dispersion of SiO 2 @CdTe used, the aqueous solution of N-hydroxysuccinimide, and the aqueous solution of ethyl-(3-dimethylaminopropyl) carbodiimide hydrochloride 25:1:1; the concentration of the distilled water dispersion of SiO 2 @CdTe used is 1mg/mL, the concentration of the aqueous solution of N-hydroxysuccinimide is 0.2M, ethyl-(3-dimethylaminopropyl ) The concentration of the aqueous solution of carbodiimide hydrochloride is 0.4M; In the mixed solution A, the concentration of the probe 2 in the tris-HCl buffer solution in which the probe 2 is dissolved is 10 μM, and in the mixed solution A, each 100 μL of tris-HCl buffer contains 1 mg of SiO 2 @CdTe; in the mixture B, the concentration of Probe2/SiO 2 @CdTe is 4 μM.

所有的电极冲洗方法均为用PH7.0的PBS缓冲液冲洗电极3次,所有的tris-HCl缓冲液pH均为7.4,浓度均为4.5mM。All electrode washing methods are to wash the electrodes with PBS buffer solution with pH 7.0 for 3 times, and all tris-HCl buffer solutions have a pH of 7.4 and a concentration of 4.5 mM.

在进行向目标DNA(t-DNA)修饰探针2(Probe2)前,先取新鲜配置的0.01mM6-巯基己醇20μL,滴加在ITO-rGO/Au-Probe1-t-DNA表面,用以封闭rGO/Au上多余的活性位点,2小时后用,用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的6-巯基己醇。Before modifying the probe 2 (Probe2) to the target DNA (t-DNA), take 20 μL of freshly prepared 0.01 mM 6-mercaptohexanol and drop it on the surface of ITO-rGO/Au-Probe1-t-DNA for blocking The excess active sites on rGO/Au were used after 2 hours, and the electrode was washed 3 times with PBS buffer at pH 7.0 to remove excess 6-mercaptohexanol.

SiO2@CdTe的制备方法为:选取硅球加入到邻苯二甲酸二乙二醇二丙烯酸酯(PDDA)中,搅拌反应,搅拌反应完毕进行离心、洗涤后,取沉淀加入到CdTe的蒸馏水分散液中,搅拌反应,反应结束后,离心、洗涤、干燥,得到产物,备用。The preparation method of SiO 2 @CdTe is as follows: select silicon balls and add them to diethylene glycol diacrylate (PDDA), stir the reaction, after the stirring reaction is completed, centrifuge and wash, take the precipitate and add it to distilled water of CdTe to disperse solution, stirred and reacted, after the reaction was completed, centrifuged, washed, and dried to obtain the product, which was set aside.

所用的探针1(Probe1)序列为5’HS-GGCCATCGTTGAA3’;CaMV35S(t-DNA)序列为5’GGCAGAGGCATCTTCAACGATGGCC3’;探针2(Probe2)序列为5’GATGCCTCTGCC-NH23’。The sequence of probe 1 (Probe1) used was 5'HS-GGCCATCGTTGAA3'; the sequence of CaMV35S (t-DNA) was 5'GGCAGAGGCATCTTCAACGATGGCC3'; the sequence of probe 2 (Probe2) was 5'GATGCCTCTGCC-NH23'.

以所制备的电极作为传感器,用于光电化学检测CaMV35S启动子,其检测步骤如下:The prepared electrode is used as a sensor for photoelectrochemical detection of the CaMV35S promoter, and the detection steps are as follows:

(1)将所制备的含有不同浓度目标DNA的ITO电极置于PH7.0PBS缓冲液中,使用三电极体系,进行电化学检测。(1) Place the prepared ITO electrodes containing different concentrations of target DNA in PBS buffer at pH 7.0, and use a three-electrode system for electrochemical detection.

所述三电极体系:饱和甘汞电极为参比电极,铂丝电极为对电极,ITO为工作电极;The three-electrode system: a saturated calomel electrode is a reference electrode, a platinum wire electrode is a counter electrode, and ITO is a working electrode;

(2)扫描电压范围从-0.5V~0V,电势跃阶为4mV,频率25Hz,振幅25mV;(2) The scanning voltage ranges from -0.5V to 0V, the potential step is 4mV, the frequency is 25Hz, and the amplitude is 25mV;

(3)光电检测采用i-t测试手段,偏压设置为0V;每隔20s进行开关灯,记录开关灯前后电流的变化值,根据不同浓度的t-DNA产生的不同大小的光电流值,绘制工作标准曲线;(3) The photoelectric detection adopts the i-t test method, and the bias voltage is set to 0V; switch the lamp every 20s, record the change value of the current before and after the switch lamp, and according to the different photocurrent values generated by different concentrations of t-DNA, Draw a working standard curve;

(4)将待测样品溶液代替t-DNA溶液,按照所述工作曲线绘制的方法进行检测。(4) Replace the t-DNA solution with the sample solution to be tested, and perform detection according to the method for drawing the working curve.

CaMV35S检测的标准曲线是指该传感器在与不同浓度的CaMV35S进行反应,并扫得其光电流信号图谱,根据不同浓度下光电流制得的标准曲线。The standard curve for CaMV35S detection refers to the standard curve prepared according to the photocurrent at different concentrations after the sensor reacts with different concentrations of CaMV35S and scans its photocurrent signal spectrum.

本发明的有益效果为:The beneficial effects of the present invention are:

(1)本发明通过CaMV35S作为目标DNA和双探针特异性互补配对原则,特异性识别CaMV35S转基因,可对转基因作物及其产品进行检测,大大降低了假阴性和假阳性出现的概率。(1) The present invention uses CaMV35S as the target DNA and the principle of specific complementary pairing of double probes to specifically recognize the CaMV35S transgene, and can detect transgenic crops and their products, greatly reducing the probability of false negatives and false positives.

(2)本发明通过二氧化硅纳米微球表面包覆CdTe,使单个Probe2上可连接N个CdTe,从而进行信号放大。(2) The present invention coats CdTe on the surface of silica nano-microspheres, so that N pieces of CdTe can be connected to a single Probe2, thereby performing signal amplification.

(3)本发明通过rGO/AuNPs和SiO2@CdTe两端双重信号放大,实现了对转基因CaMV35S启动子的灵敏检测,在0.1~100pM的浓度区间内,CaMV35S浓度与光电流呈现良好的线性关系,检出限可达0.017pM。(3) The present invention realizes the sensitive detection of the transgenic CaMV35S promoter through dual signal amplification at both ends of rGO/AuNPs and SiO 2 @CdTe. In the concentration range of 0.1-100pM, the CaMV35S concentration and photocurrent present a good linear relationship , the detection limit can reach 0.017pM.

附图说明Description of drawings

图1为实施例4中检测不同浓度CaMV35S所得到的光电流响应图,其中a为0.05pM、b为0.01pM、c为0.5pM、d为1pM、e为10pM、f为50pM、g为100pM;Fig. 1 is the photocurrent response diagram obtained by detecting different concentrations of CaMV35S in Example 4, wherein a is 0.05pM, b is 0.01pM, c is 0.5pM, d is 1pM, e is 10pM, f is 50pM, and g is 100pM ;

图2为实施例3和实施例7中的实验对比图,其中a为实施例3中的空白电极的光电流响应,b为t-DNA光电流响应,c为2个碱基错配DNA,d为5个碱基错配DNA各,e为完全不互补DNA。Fig. 2 is the experimental contrast figure in embodiment 3 and embodiment 7, wherein a is the photocurrent response of the blank electrode in embodiment 3, b is the photocurrent response of t-DNA, c is 2 base mismatched DNAs, d is 5 base mismatched DNA each, e is completely non-complementary DNA.

具体实施方式detailed description

下面结合具体实施例对本发明作进一步描述:The present invention will be further described below in conjunction with specific embodiment:

本发明中所用的硅球和CdTe均可以采用现有的方法制备得到,本发明所用的硅球是指二氧化硅纳米微球。Both the silicon spheres and CdTe used in the present invention can be prepared by existing methods, and the silicon spheres used in the present invention refer to silicon dioxide nano-microspheres.

本发明所用的氧化石墨烯的制备方法为:The preparation method of the graphene oxide used in the present invention is:

GO的制备采用改进的Hummers法:在冰水浴与搅拌条件下,将1g天然鳞片石墨加入到50mL浓H2S2O4(98%)中,冷却至零度;缓慢加入0.5gKNO3和6gKMnO4。在控制反应温度不超过10℃的条件下反应4h。然后将该体系转移至35℃恒温水浴搅拌反应2h,加入300mL去离子水,在≤80℃条件下继续反应2h。用过量的5%H2O2还原剩余的KMnO4,并用5%HCl洗涤若干次,最后用足够的去离子水充分洗涤至溶液不再含有SO4 2-离子(BaCl2检测无白色沉淀)。将最终产物转移至65℃烘箱中干燥,储存备用。The preparation of GO adopts the modified Hummers method: under the conditions of ice-water bath and stirring, add 1g of natural flake graphite to 50mL concentrated H 2 S 2 O 4 (98%), cool to zero; slowly add 0.5gKNO 3 and 6gKMnO 4 . React for 4 hours under the condition that the reaction temperature is controlled not to exceed 10°C. Then the system was transferred to a constant temperature water bath at 35° C. for stirring for 2 h, 300 mL of deionized water was added, and the reaction was continued for 2 h at ≤80° C. Reduce the remaining KMnO 4 with excess 5% H 2 O 2 , wash with 5% HCl several times, and finally wash with enough deionized water until the solution no longer contains SO 4 2- ions (BaCl 2 detects no white precipitate) . The final product was transferred to a 65°C oven for drying and stored for future use.

rGO/Au的制备方法为:The preparation method of rGO/Au is:

称取25mgGO超声分散在50mL无水乙醇溶液中,加入1gEDC和0.5gNHS,室温下搅拌反应8h;然后将1.0g2-ATP加入到上述反应体系中,室温下继续搅拌12h;反应结束后,用无水乙醇和二次蒸馏水分别洗涤、离心3~5次,最后在60℃下真空干燥24h,得到GO-SH;称取10mg上述制备的GO-SH于30mL二次蒸馏水中超声分散,并转移至三孔烧瓶中,搅拌状态下加热回流0.5h;然后将10mL新鲜配制的柠檬酸钠溶液(0.2gmL-1)缓慢加入到三孔烧瓶中,搅拌条件下继续加热回流2.5h;再将50μLHAuCl4溶液(2wt%)缓慢滴加到上述反应体系中,继续加热回流0.5h后停止加热,搅拌状态下冷却至室温。最后用二次蒸馏水洗涤、离心3~5次,真空干燥后即可得到rGO/AuNPs。Weigh 25 mg of GO and ultrasonically disperse it in 50 mL of absolute ethanol solution, add 1 g of EDC and 0.5 g of NHS, and stir for 8 h at room temperature; then add 1.0 g of 2-ATP into the above reaction system, and continue stirring for 12 h at room temperature; Wash with water ethanol and double-distilled water, centrifuge for 3-5 times, and finally vacuum-dry at 60°C for 24 hours to obtain GO-SH; weigh 10 mg of the above-prepared GO-SH and ultrasonically disperse in 30 mL of double-distilled water, and transfer to In the three-hole flask, heat and reflux for 0.5h under stirring; then slowly add 10mL of freshly prepared sodium citrate solution (0.2gmL -1 ) into the three-hole flask, continue heating and reflux for 2.5h under stirring; then add 50μL HAuCl 4 The solution (2wt%) was slowly added dropwise into the above reaction system, continued to heat and reflux for 0.5h, then stopped heating, and cooled to room temperature while stirring. Finally, the rGO/AuNPs were obtained by washing with twice distilled water, centrifuging for 3 to 5 times, and vacuum drying.

实施例1:Example 1:

SiO2@CdTe的制备Preparation of SiO 2 @CdTe

取1mg100nm左右的硅球,加入到40mL0.4%邻苯二甲酸二乙二醇二丙烯酸酯(PDDA)中,搅拌1小时,7000转离心5分钟,蒸馏水离心水洗3次后,取沉淀加入到8mL含有2.4mgCdTe的蒸馏水中,搅拌反应1小时,将产物离心、洗涤、干燥,备用。Take 1mg of 100nm silicon spheres, add them to 40mL of 0.4% diethylene glycol diacrylate (PDDA), stir for 1 hour, centrifuge at 7000 rpm for 5 minutes, wash with distilled water for 3 times, then take the precipitate and add it to 8 mL of distilled water containing 2.4 mg of CdTe was stirred and reacted for 1 hour, and the product was centrifuged, washed, and dried for later use.

实施例2:Example 2:

Probe2/SiO2@CdTe的制备:Preparation of Probe2/SiO 2 @CdTe:

取1mL1mg/mL的SiO2@CdTe蒸馏水分散液和40μL0.2MN-羟基琥珀酰亚胺(NHS)加入到40μL0.4M乙基-(3-二甲基氨丙基)碳二亚胺盐酸盐(EDC)中,反应2小时后,离心移除多余的EDC和NHS,加入100μL10μM的Probe2tris-HCl缓冲液,振荡12小时,得到Probe2/SiO2@CdTe。Take 1 mL of 1 mg/mL SiO 2 @CdTe dispersion in distilled water and 40 μL of 0.2M N-hydroxysuccinimide (NHS) into 40 μL of 0.4M ethyl-(3-dimethylaminopropyl)carbodiimide hydrochloride (EDC), after reacting for 2 hours, centrifuge to remove excess EDC and NHS, add 100 μL of 10 μM Probe2tris-HCl buffer, and shake for 12 hours to obtain Probe2/SiO 2 @CdTe.

实施例3:Example 3:

(1)ITO电极的预处理:将ITO导电玻璃切割成1cm*2cm大小,依次用洗洁精、乙醇、超纯水超声清洗30min,之后用氮气吹干,用绝缘胶带在ITO电极的一段固定出1cm*0.5cm的面积用以修饰材料及检测;(1) Pretreatment of ITO electrode: Cut the ITO conductive glass into 1cm*2cm size, clean it with detergent, ethanol, and ultrapure water for 30 minutes, then dry it with nitrogen, and fix it on a section of the ITO electrode with insulating tape An area of 1cm*0.5cm is used for modifying materials and testing;

(2)取20μL分散有2mg/mLrGO/Au的蒸馏水分散液均匀滴涂在ITO导电玻璃上,放置干燥;(2) Take 20 μL of distilled water dispersion dispersed with 2mg/mLrGO/Au and evenly drop-coat it on the ITO conductive glass, and place it to dry;

(3)取10μL4μM带巯基的Probe1滴涂在步骤(2)的电极表面,借助Au-S键把Probe1固定在电极表面,反应12小时,用PH7.0的PBS缓冲液冲洗电极3次,冲洗除去过量的Probe1,干燥,得到ITO-rGO/Au-Probe1;(3) Take 10 μL of 4 μM Probe1 with sulfhydryl group drop-coated on the surface of the electrode in step (2), fix Probe1 on the surface of the electrode with the help of Au-S bonds, react for 12 hours, rinse the electrode with PBS buffer solution of pH 7.0 for 3 times, rinse Remove excess Probe1 and dry to obtain ITO-rGO/Au-Probe1;

(4)取新鲜配置的0.01mM6-巯基己醇20μL,滴加在电极表面,用以封闭rGO/Au上多余的活性位点,2小时后用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的MCH;(4) Take 20 μL of freshly prepared 0.01 mM 6-mercaptohexanol and add it dropwise on the surface of the electrode to seal the redundant active sites on rGO/Au. After 2 hours, rinse the electrode with PBS buffer solution with pH 7.0 for 3 times. To remove excess MCH;

(5)取20μL4μM的Probe2/SiO2@CdTe蒸馏水分散液滴涂到电极表面,形成空白DNA的对照试验,孵育50分钟后,用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的Probe2/SiO2@CdTe,得到ITO-rGO/Au-Probe1-Probe2/SiO2@CdTe光电化学传感器。(5) Take 20 μL of 4 μM Probe2/SiO 2 @CdTe distilled water dispersion and apply it onto the surface of the electrode to form a control test of blank DNA. After incubation for 50 minutes, wash the electrode 3 times with PBS buffer at pH 7.0 to remove excess Probe2/SiO 2 @CdTe to get ITO-rGO/Au-Probe1-Probe2/SiO 2 @CdTe photoelectrochemical sensor.

实施例4:Example 4:

(1)ITO电极的预处理:将ITO导电玻璃切割成1cm*2cm大小,依次用洗洁精、乙醇、超纯水超声清洗30min,之后用氮气吹干,用绝缘胶带在ITO电极的一段固定出1cm*0.5cm的面积用以修饰材料及检测;(1) Pretreatment of ITO electrode: Cut the ITO conductive glass into 1cm*2cm size, clean it with detergent, ethanol, and ultrapure water for 30 minutes, then dry it with nitrogen, and fix it on a section of the ITO electrode with insulating tape An area of 1cm*0.5cm is used for modifying materials and testing;

(2)取20μL分散有1mg/mLrGO/Au的蒸馏水分散液均匀滴涂在ITO导电玻璃上,放置干燥;(2) Take 20 μL of distilled water dispersion dispersed with 1 mg/mLrGO/Au and evenly drop-coat it on the ITO conductive glass, and let it dry;

(3)取10μL4μM带巯基的Probe1滴涂在步骤(2)的电极表面,借助Au-S键把Probe1固定在电极表面,反应12小时,用PH7.0的PBS缓冲液冲洗电极3次,冲洗除去过量的Probe1,干燥,得到ITO-rGO/Au-Probe1;(3) Take 10 μL of 4 μM Probe1 with sulfhydryl group drop-coated on the surface of the electrode in step (2), fix Probe1 on the surface of the electrode with the help of Au-S bonds, react for 12 hours, rinse the electrode with PBS buffer solution of pH 7.0 for 3 times, rinse Remove excess Probe1 and dry to obtain ITO-rGO/Au-Probe1;

(4)取新鲜配置的0.01mM6-巯基己醇20μL,滴加在电极表面,用以封闭rGO/Au上多余的活性位点,2小时后用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的MCH;(4) Take 20 μL of freshly prepared 0.01 mM 6-mercaptohexanol and add it dropwise on the surface of the electrode to seal the redundant active sites on rGO/Au. After 2 hours, rinse the electrode with PBS buffer solution with pH 7.0 for 3 times. To remove excess MCH;

(5)分别取0.05、0.1、0.5、1、10、50、100pM的t-DNA各20μL滴加在6片不同的ITO电极表面,使目标DNA和Probe1互补配对,室温孵育50分钟,用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的目标DNA,得到ITO-rGO/Au-Probe1-t-DNA;(5) Take 20 μL of 0.05, 0.1, 0.5, 1, 10, 50, and 100 pM t-DNA respectively and drop them on the surface of 6 different ITO electrodes to make the target DNA and Probe1 complement each other, incubate at room temperature for 50 minutes, and use pH7 .0 PBS buffer solution to rinse the electrode 3 times to remove excess target DNA to obtain ITO-rGO/Au-Probe1-t-DNA;

(6)取20μL4μM的Probe2/SiO2@CdTe蒸馏水分散液滴涂到电极表面,使Probe2和目标DNA互补配对以接上光电化学信号标志物质SiO2@CdTe,孵育50分钟后,用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的Probe2/SiO2@CdTe,得到对应浓度的t-DNA的ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO2@CdTe光电化学传感器。(6) Take 20 μL of 4 μM Probe2/SiO 2 @CdTe distilled water dispersion and apply it to the surface of the electrode, so that Probe2 and the target DNA are complementary paired to connect with the photoelectrochemical signal marker SiO 2 @CdTe. After incubation for 50 minutes, use pH7.0 Rinse the electrode 3 times with PBS buffer to remove excess Probe2/SiO 2 @CdTe, and obtain ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO 2 @CdTe photoelectrochemical sensor with corresponding concentration of t-DNA.

本实施例制备的ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO2@CdTe光电化学传感器用于检测CaMV35S启动子,其结果如图1,图1显示在0.05~100pM范围内,对CaMV35S的检测呈现很好的线性,检测限达到了0.017pM,因此该传感器可以用于CaMV35S的定量检测。The ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO 2 @CdTe photoelectrochemical sensor prepared in this example was used to detect the CaMV35S promoter. The results are shown in Figure 1, and Figure 1 shows that it is in the range of 0.05 to 100pM. The detection of CaMV35S showed good linearity, and the detection limit reached 0.017pM, so the sensor can be used for the quantitative detection of CaMV35S.

实施例5:Example 5:

(1)ITO电极的预处理:将ITO导电玻璃切割成1cm*2cm大小,依次用洗洁精、乙醇、超纯水超声清洗30min,之后用氮气吹干,用绝缘胶带在ITO电极的一段固定出1cm*0.5cm的面积用以修饰材料及检测;(1) Pretreatment of ITO electrode: Cut the ITO conductive glass into 1cm*2cm size, clean it with detergent, ethanol, and ultrapure water for 30 minutes, then dry it with nitrogen, and fix it on a section of the ITO electrode with insulating tape An area of 1cm*0.5cm is used for modifying materials and testing;

(2)取20μL分散有2mg/mLrGO/Au的蒸馏水分散液均匀滴涂在ITO导电玻璃上,放置干燥;(2) Take 20 μL of distilled water dispersion dispersed with 2mg/mLrGO/Au and evenly drop-coat it on the ITO conductive glass, and place it to dry;

(3)取10μL4μM带巯基的Probe1滴涂在步骤(2)的电极表面,借助Au-S键把Probe1固定在电极表面,反应12小时,用PH7.0的PBS缓冲液冲洗电极3次,冲洗除去过量的Probe1,干燥,得到ITO-rGO/Au-Probe1;(3) Take 10 μL of 4 μM Probe1 with sulfhydryl group drop-coated on the surface of the electrode in step (2), fix Probe1 on the surface of the electrode with the help of Au-S bonds, react for 12 hours, rinse the electrode with PBS buffer solution of pH 7.0 for 3 times, rinse Remove excess Probe1 and dry to obtain ITO-rGO/Au-Probe1;

(4)取新鲜配置的0.01mM6-巯基己醇20μL,滴加在电极表面,用以封闭rGO/Au上多余的活性位点,2小时后用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的MCH;(4) Take 20 μL of freshly prepared 0.01 mM 6-mercaptohexanol and add it dropwise on the surface of the electrode to seal the redundant active sites on rGO/Au. After 2 hours, rinse the electrode with PBS buffer solution with pH 7.0 for 3 times. To remove excess MCH;

(5)分别取0.05、0.1、0.5、1、10、50、100pM的t-DNA各20μL滴加在6片不同的ITO电极表面,使目标DNA和Probe1互补配对,室温孵育50分钟,用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的目标DNA,得到ITO-rGO/Au-Probe1-t-DNA;(5) Take 20 μL of 0.05, 0.1, 0.5, 1, 10, 50, and 100 pM t-DNA respectively and drop them on the surface of 6 different ITO electrodes to make the target DNA and Probe1 complement each other, incubate at room temperature for 50 minutes, and use pH7 .0 PBS buffer solution to rinse the electrode 3 times to remove excess target DNA to obtain ITO-rGO/Au-Probe1-t-DNA;

(6)取1mLSiO2@CdTe,加入40μL400mM乙基-(3-二甲基氨丙基)碳二亚胺盐酸盐(EDC)和40μL200mMN-羟基琥珀酰亚胺(NHS),反应2小时后,离心移除多余的EDC和NHS,加入100μL含有10μMProbe2的tris-HCl缓冲液,振荡12小时,得到Probe2/SiO2@CdTe。取20μL4μM的Probe2/SiO2@CdTe蒸馏水分散液滴涂到电极表面,使Probe2和目标DNA互补配对以接上光电化学信号标志物质SiO2@CdTe,孵育50分钟后,用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的Probe2/SiO2@CdTe,得到对应浓度的t-DNA的ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO2@CdTe光电化学传感器。(6) Take 1 mL of SiO 2 @CdTe, add 40 μL of 400 mM ethyl-(3-dimethylaminopropyl) carbodiimide hydrochloride (EDC) and 40 μL of 200 mM N-hydroxysuccinimide (NHS), and react for 2 hours , centrifuge to remove excess EDC and NHS, add 100 μL of tris-HCl buffer containing 10 μM Probe2, and shake for 12 hours to obtain Probe2/SiO 2 @CdTe. Take 20 μL of 4 μM Probe2/SiO 2 @CdTe distilled water dispersion drop-coated on the electrode surface, so that Probe2 and the target DNA are complementary paired to connect with the photoelectrochemical signal marker SiO 2 @CdTe, after incubation for 50 minutes, buffer with PBS with pH 7.0 The electrode was rinsed three times with the solution to remove excess Probe2/SiO 2 @CdTe, and the ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO 2 @CdTe photoelectrochemical sensor with the corresponding concentration of t-DNA was obtained.

实施例6:Embodiment 6:

(1)ITO电极的预处理:将ITO导电玻璃切割成1cm*2cm大小,依次用洗洁精、乙醇、超纯水超声清洗30min,之后用氮气吹干,用绝缘胶带在ITO电极的一段固定出1cm*0.5cm的面积用以修饰材料及检测;(1) Pretreatment of ITO electrode: Cut the ITO conductive glass into 1cm*2cm size, clean it with detergent, ethanol, and ultrapure water for 30 minutes, then dry it with nitrogen, and fix it on a section of the ITO electrode with insulating tape An area of 1cm*0.5cm is used for modifying materials and testing;

(2)取20μL分散有4mg/mLrGO/Au的蒸馏水分散液均匀滴涂在ITO导电玻璃上,放置干燥;(2) Take 20 μL of distilled water dispersion dispersed with 4mg/mLrGO/Au and evenly drop-coat it on the ITO conductive glass, and let it dry;

(3)取10μL4μM带巯基的Probe1滴涂在步骤(2)的电极表面,借助Au-S键把Probe1固定在电极表面,反应12小时,用PH7.0的PBS缓冲液冲洗电极3次,冲洗除去过量的Probe1,干燥,得到ITO-rGO/Au-Probe1;(3) Take 10 μL of 4 μM Probe1 with sulfhydryl group drop-coated on the surface of the electrode in step (2), fix Probe1 on the surface of the electrode with the help of Au-S bonds, react for 12 hours, rinse the electrode with PBS buffer solution of pH 7.0 for 3 times, rinse Remove excess Probe1 and dry to obtain ITO-rGO/Au-Probe1;

(4)取新鲜配置的0.01mM6-巯基己醇20μL,滴加在电极表面,用以封闭rGO/Au上多余的活性位点,2小时后用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的MCH;(4) Take 20 μL of freshly prepared 0.01 mM 6-mercaptohexanol and add it dropwise on the surface of the electrode to seal the redundant active sites on rGO/Au. After 2 hours, rinse the electrode with PBS buffer solution with pH 7.0 for 3 times. To remove excess MCH;

(5)分别取0.05、0.1、0.5、1、10、50、100pM的t-DNA各20μL滴加在6片不同的ITO电极表面,使目标DNA和Probe1互补配对,室温孵育50分钟,用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的目标DNA,得到ITO-rGO/Au-Probe1-t-DNA;(5) Take 20 μL of 0.05, 0.1, 0.5, 1, 10, 50, and 100 pM t-DNA respectively and drop them on the surface of 6 different ITO electrodes to make the target DNA and Probe1 complement each other, incubate at room temperature for 50 minutes, and use pH7 .0 PBS buffer solution to rinse the electrode 3 times to remove excess target DNA to obtain ITO-rGO/Au-Probe1-t-DNA;

(6)取1mLSiO2@CdTe,加入40μL400mM乙基-(3-二甲基氨丙基)碳二亚胺盐酸盐(EDC)和40μL200mMN-羟基琥珀酰亚胺(NHS),反应2小时后,离心移除多余的EDC和NHS,加入100μL含有10μMProbe2的tris-HCl缓冲液,振荡12小时,得到Probe2/SiO2@CdTe。取20μL4μM的Probe2/SiO2@CdTe蒸馏水分散液滴涂到电极表面,使Probe2和目标DNA互补配对以接上光电化学信号标志物质SiO2@CdTe,孵育50分钟后,用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的Probe2/SiO2@CdTe,得到对应浓度的t-DNA的ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO2@CdTe光电化学传感器。(6) Take 1 mL of SiO 2 @CdTe, add 40 μL of 400 mM ethyl-(3-dimethylaminopropyl) carbodiimide hydrochloride (EDC) and 40 μL of 200 mM N-hydroxysuccinimide (NHS), and react for 2 hours , centrifuge to remove excess EDC and NHS, add 100 μL of tris-HCl buffer containing 10 μM Probe2, and shake for 12 hours to obtain Probe2/SiO 2 @CdTe. Take 20 μL of 4 μM Probe2/SiO 2 @CdTe distilled water dispersion drop-coated on the electrode surface, so that Probe2 and the target DNA are complementary paired to connect with the photoelectrochemical signal marker SiO 2 @CdTe, after incubation for 50 minutes, buffer with PBS with pH 7.0 The electrode was rinsed three times with the solution to remove excess Probe2/SiO 2 @CdTe, and the ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO 2 @CdTe photoelectrochemical sensor with the corresponding concentration of t-DNA was obtained.

由于实施例4~6中修饰的rGO/Au的量不同,所以最终负载的探针以及目标DNA的量均有区别,但是其检测结果的区别仅限于光电流大小,因此该3个实施例的电极均可以用于光电化学检测CaMV35S。Since the amount of modified rGO/Au in Examples 4 to 6 is different, the amount of the probe and the target DNA that are finally loaded are different, but the difference in the detection results is only limited to the magnitude of the photocurrent, so the three examples All electrodes can be used for photoelectrochemical detection of CaMV35S.

实施例7:Embodiment 7:

(1)ITO电极的预处理:将ITO导电玻璃切割成1cm*2cm大小,依次用洗洁精、乙醇、超纯水超声清洗30min,之后用氮气吹干,用绝缘胶带在ITO电极的一段固定出1cm*0.5cm的面积用以修饰材料及检测;(1) Pretreatment of ITO electrode: Cut the ITO conductive glass into 1cm*2cm size, clean it with detergent, ethanol, and ultrapure water for 30 minutes, then dry it with nitrogen, and fix it on a section of the ITO electrode with insulating tape An area of 1cm*0.5cm is used for modifying materials and testing;

(2)取20μL分散有1mg/mLrGO/Au的蒸馏水分散液均匀滴涂在ITO导电玻璃上,放置干燥;(2) Take 20 μL of distilled water dispersion dispersed with 1 mg/mLrGO/Au and evenly drop-coat it on the ITO conductive glass, and let it dry;

(3)取10μL4μM带巯基的Probe1滴涂在步骤(2)的电极表面,借助Au-S键把Probe1固定在电极表面,反应12小时,用PH7.0的PBS缓冲液冲洗电极3次,冲洗除去过量的Probe1,干燥,得到ITO-rGO/Au-Probe1;(3) Take 10 μL of 4 μM Probe1 with sulfhydryl group drop-coated on the surface of the electrode in step (2), fix Probe1 on the surface of the electrode with the help of Au-S bonds, react for 12 hours, rinse the electrode with PBS buffer solution of pH 7.0 for 3 times, rinse Remove excess Probe1 and dry to obtain ITO-rGO/Au-Probe1;

(4)取新鲜配置的0.01mM6-巯基己醇20μL,滴加在电极表面,用以封闭rGO/Au上多余的活性位点,2小时后用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的MCH;(4) Take 20 μL of freshly prepared 0.01 mM 6-mercaptohexanol and add it dropwise on the surface of the electrode to seal the redundant active sites on rGO/Au. After 2 hours, rinse the electrode with PBS buffer solution with pH 7.0 for 3 times. To remove excess MCH;

(5)分别取20μL200pM的t-DNA、2个碱基错配DNA、5个碱基错配DNA各和完全不互补DNA20μL滴加在6片不同的ITO电极表面,使DNA和Probe1互补配对,室温孵育50分钟,用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的DNA,得到ITO-rGO/Au-Probe1-t-DNA;(5) Take 20 μL of 200pM t-DNA, 2 base mismatched DNA, 5 base mismatched DNA and 20 μL of completely non-complementary DNA and drop them on the surface of 6 different ITO electrodes to make the DNA and Probe1 complement each other. Incubate at room temperature for 50 minutes, wash the electrode 3 times with PBS buffer solution of pH 7.0 to remove excess DNA, and obtain ITO-rGO/Au-Probe1-t-DNA;

(6)取20μL4μM的Probe2/SiO2@CdTe蒸馏水分散液滴涂到电极表面,使Probe2和目标DNA互补配对以接上光电化学信号标志物质SiO2@CdTe,孵育50分钟后,用PH7.0的PBS缓冲液冲洗电极3次,以除去过量的Probe2/SiO2@CdTe,得到对应DNA的光电化学传感器。(6) Take 20 μL of 4 μM Probe2/SiO 2 @CdTe distilled water dispersion and apply it to the surface of the electrode, so that Probe2 and the target DNA are complementary paired to connect with the photoelectrochemical signal marker SiO 2 @CdTe. After incubation for 50 minutes, use pH7.0 Rinse the electrode 3 times with PBS buffer solution to remove excess Probe2/SiO 2 @CdTe to obtain a photoelectrochemical sensor corresponding to DNA.

图2为本实施例与实施例3所制备的传感器的对比数据,可以发现本实施例的传感器随着碱基错配数量的增多,其光电相应信号逐渐降低,当电极修饰完全不互补的DNA之后,其光电响应值和空白对照基本相同,说明本传感器对CaMV35S具有良好的选择特异性。Figure 2 is the comparative data of the sensors prepared in this example and Example 3. It can be found that the photoelectric corresponding signal of the sensor of this example decreases gradually with the increase of the number of base mismatches. When the electrode is modified with completely non-complementary DNA Afterwards, its photoelectric response value was basically the same as that of the blank control, indicating that the sensor had good selection specificity for CaMV35S.

上述实施例中,所用的探针1序列为5’HS-GGCCATCGTTGAA3’;CaMV35S(t-DNA)序列为5’GGCAGAGGCATCTTCAACGATGGCC3’;探针2序列为5’GATGCCTCTGCC-NH23’;2个碱基错配DNA的序列为:5’GGCAGAGGCAACTTCAAGGATGGCC3’;5个碱基错配DNA的序列为:5’GCCAGAGGCAACTTCAAGGATGCCG3’;完全不互补配对DNA的序列为:5’CCTGCTCCGTAGCCTGCGTCATCTG3’。In the above examples, the sequence of probe 1 used is 5'HS-GGCCATCGTTGAA3'; the sequence of CaMV35S (t-DNA) is 5'GGCAGAGGCATCTTCAACGATGGCC3'; the sequence of probe 2 is 5'GATGCCTCTGCC-NH23'; 2 base mismatches The sequence of DNA is: 5'GGCAGAGGCAACTTCAAGGATGGCC3'; the sequence of DNA with 5 base mismatches is: 5'GCCAGAGGCAACTTCAAGGATGCCG3'; the sequence of completely non-complementary DNA is: 5'CCTGCTCCGTAGCCTGCGTCATCTG3'.

SEQUENCELISTING SEQUENCELISTING

<110>江苏大学 <110> Jiangsu University

<120>一种检测转基因CaMV35S启动子的电极的制备方法及用途 <120> A preparation method and application of an electrode for detecting the transgenic CaMV35S promoter

<130>一种检测转基因CaMV35S启动子的电极的制备方法及用途 <130> A preparation method and application of an electrode for detecting the transgenic CaMV35S promoter

<160>3 <160>3

<170>PatentInversion3.5 <170>PatentInversion3.5

<210>1 <210>1

<211>13 <211>13

<212>DNA <212>DNA

<213>人工序列 <213> Artificial sequence

<400>1 <400>1

ggccatcgttgaa13 ggccatcgttgaa13

<210>2 <210>2

<211>25 <211>25

<212>DNA <212>DNA

<213>人工序列 <213> Artificial sequence

<400>2 <400>2

ggcagaggcatcttcaacgatggcc25 ggcagaggcatcttcaacgatggcc25

<210>3 <210>3

<211>12 <211>12

<212>DNA <212>DNA

<213>人工序列 <213> Artificial sequence

<400>3 <400>3

gatgcctctgcc12 gatgcctctgcc12

Claims (9)

1.一种检测转基因CaMV35S启动子电极的制备方法,其特征在于,包括:1. A preparation method for detecting a transgenic CaMV35S promoter electrode, characterized in that, comprising: 步骤1、还原氧化石墨烯/金纳米复合材料RGO/Au的制备步骤;Step 1, the preparation step of reduced graphene oxide/gold nanocomposite material RGO/Au; 步骤2、二氧化硅纳米微球@碲化镉纳米复合材料SiO2@CdTe的制备步骤;Step 2. Preparation steps of silica nanospheres@cadmium telluride nanocomposite material SiO 2 @CdTe; 步骤3、在ITO电极上制备探针1的步骤:将RGO/Au分散于蒸馏水中得到RGO/Au分散液后滴涂于ITO电极表面的修饰区,进行干燥;取溶有探针1的tris-HCl缓冲液滴涂于所述干燥后的RGO/Au表面,进行干燥;冲洗电极表面后,进行干燥,得到ITO-rGO/Au-Probe1;Step 3, the step of preparing probe 1 on the ITO electrode: disperse RGO/Au in distilled water to obtain the RGO/Au dispersion liquid, then drop-coat it on the modified area on the surface of the ITO electrode, and dry it; take the tris solution with probe 1 - HCl buffer solution is drip-coated on the surface of the dried RGO/Au and dried; after rinsing the surface of the electrode, it is dried to obtain ITO-rGO/Au-Probe1; 步骤4、向探针1修饰目标DNACaMV35S启动子的步骤:取溶有目标DNACaMV35S启动子的tris-HCl缓冲液滴涂于所述ITO-rGO/Au-Probe1的表面,室温孵育,待干燥后冲洗电极,得到ITO-rGO/Au-Probe1-t-DNA;Step 4. The step of modifying the target DNACaMV35S promoter to probe 1: take the tris-HCl buffer dissolved in the target DNACaMV35S promoter and apply it on the surface of the ITO-rGO/Au-Probe1, incubate at room temperature, rinse after drying Electrode, get ITO-rGO/Au-Probe1-t-DNA; 步骤5、向目标DNACaMV35S启动子修饰探针2的步骤:将SiO2@CdTe的蒸馏水分散液和N-羟基琥珀酰亚胺的水溶液加入到乙基-(3-二甲基氨丙基)碳二亚胺盐酸盐的水溶液中进行反应,反应结束后,离心并洗涤得到固体A,将所得固体A加入到溶有探针2的tris-HCl缓冲液中,得到混合液A,振荡反应一段时间后,得到固体产物Probe2/SiO2@CdTe;将Probe2/SiO2@CdTe分散于蒸馏水中后,得到混合液B,将混合液B滴涂于所述ITO-rGO/Au-Probe1-t-DNA表面,孵育,待干燥后冲洗电极表面,得到ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO2@CdTe。Step 5. The step of modifying the probe 2 to the target DNACaMV35S promoter: adding the distilled water dispersion of SiO 2 @CdTe and the aqueous solution of N-hydroxysuccinimide to the ethyl-(3-dimethylaminopropyl) carbon The reaction is carried out in an aqueous solution of diimine hydrochloride. After the reaction, centrifuge and wash to obtain solid A. Add the obtained solid A to the tris-HCl buffer solution in which probe 2 is dissolved to obtain mixed solution A, and shake for a period of reaction. After a period of time, the solid product Probe2/SiO 2 @CdTe was obtained; after Probe2/SiO 2 @CdTe was dispersed in distilled water, a mixed solution B was obtained, and the mixed solution B was drop-coated on the ITO-rGO/Au-Probe1-t- Incubate on the DNA surface, rinse the electrode surface after drying, and obtain ITO-rGO/Au-Probe1-t-DNA-Probe2/SiO 2 @CdTe. 2.由权利要求1所述的方法,其特征在于,步骤3中,RGO/Au分散液的浓度为1~4mg/mL,滴涂于ITO表面的RGO/Au分散液的量为20μL;溶有探针1的tris-HCl缓冲液用量为10μL,探针1的浓度为4μM。2. by the method for claim 1, it is characterized in that, in step 3, the concentration of RGO/Au dispersion liquid is 1~4mg/mL, the amount of the RGO/Au dispersion liquid that is drip-coated on ITO surface is 20 μ L; The amount of tris-HCl buffer containing probe 1 was 10 μL, and the concentration of probe 1 was 4 μM. 3.由权利要求1所述的方法,其特征在于,步骤4中,溶有目标DNA的tris-HCl缓冲液用量为20μL,目标DNACaMV35S启动子的浓度为0.05pM~100pM。3. The method according to claim 1, characterized in that in step 4, the amount of tris-HCl buffer dissolved with the target DNA is 20 μL, and the concentration of the target DNACaMV35S promoter is 0.05pM˜100pM. 4.由权利要求1所述的方法,其特征在于,步骤5中,所用的SiO2@CdTe的蒸馏水分散液、N-羟基琥珀酰亚胺的水溶液、乙基-(3-二甲基氨丙基)碳二亚胺盐酸盐的水溶液的体积比25:1:1;所用的SiO2@CdTe的蒸馏水分散液的浓度为1mg/mL,N-羟基琥珀酰亚胺的水溶液的浓度为0.2M,乙基-(3-二甲基氨丙基)碳二亚胺盐酸盐的水溶液的浓度为0.4M;混合液A中,所用的溶有探针2的tris-HCl缓冲液中探针2的浓度为10μM,且混合液A中,每100μLtris-HCl缓冲液中含有1mgSiO2@CdTe;混合液B中,Probe2/SiO2@CdTe的浓度为4μM。4. The method according to claim 1, characterized in that, in step 5, the distilled water dispersion of SiO 2 @CdTe, the aqueous solution of N-hydroxysuccinimide, ethyl-(3-dimethylammonia The volume ratio of the aqueous solution of propyl) carbodiimide hydrochloride is 25:1:1; the concentration of the distilled water dispersion of SiO 2 @CdTe used is 1 mg/mL, and the concentration of the aqueous solution of N-hydroxysuccinimide is 0.2M, the concentration of the aqueous solution of ethyl-(3-dimethylaminopropyl) carbodiimide hydrochloride is 0.4M; The concentration of probe 2 was 10 μM, and in the mixture A, every 100 μL of tris-HCl buffer contained 1 mg SiO 2 @CdTe; in the mixture B, the concentration of Probe2/SiO 2 @CdTe was 4 μM. 5.由权利要求1~4任意一项所述的方法,其特征在于,SiO2@CdTe的制备方法为:选取硅球加入到邻苯二甲酸二乙二醇二丙烯酸酯中,搅拌反应,搅拌反应完毕进行离心、洗涤后,取沉淀加入到CdTe的蒸馏水分散液中,搅拌反应,反应结束后,离心、洗涤、干燥,得到产物,备用。5. The method according to any one of claims 1 to 4, characterized in that the preparation method of SiO 2 @CdTe is: select silicon spheres and add them to diethylene glycol diacrylate phthalate, stir and react, After the stirring reaction is completed, centrifuged and washed, the precipitate is added to the distilled water dispersion of CdTe, stirred and reacted, and after the reaction is completed, centrifuged, washed, and dried to obtain the product for future use. 6.由权利要求1~4任意一项所述的方法,其特征在于,所用的探针1序列为5’HS-GGCCATCGTTGAA3’;目标DNACaMV35S启动子序列为5’GGCAGAGGCATCTTCAACGATGGCC3’;探针2序列为5’GATGCCTCTGCC-NH23’。6. by the method described in claim 1~4 any one, it is characterized in that, used probe 1 sequence is 5'HS-GGCCATCGTTGAA3'; Target DNACaMV35S promoter sequence is 5'GGCAGAGGCATCTTCAACGATGGCC3'; Probe 2 sequence is 5'GATGCCTCTGCC-NH23'. 7.由权利要求1~4任意一项所述的方法,其特征在于,在进行向目标DNA修饰探针2前,先取新鲜配置的0.01mM6-巯基己醇20μL,滴加在ITO-rGO/Au-Probe1-t-DNA表面,2小时后用,用PH7.0的PBS缓冲液冲洗电极3次。7. The method according to any one of claims 1 to 4, wherein, before modifying the probe 2 to the target DNA, 20 μL of 0.01 mM 6-mercaptohexanol that is freshly configured is added dropwise to the ITO-rGO/ The surface of Au-Probe1-t-DNA was used after 2 hours, and the electrode was washed 3 times with PBS buffer of pH 7.0. 8.由权利要求1~4任意一项所述的方法,其特征在于,所有的电极冲洗方法均为用PH7.0的PBS缓冲液冲洗电极3次,所有的tris-HCl缓冲液pH均为7.4,浓度均为4.5mM。8. by the method described in any one of claim 1~4, it is characterized in that, all electrode flushing methods are to flush electrode 3 times with the PBS damping fluid of pH7.0, and all tris-HCl buffering fluid pHs are 7.4, the concentration is 4.5mM. 9.由权利要求1~8任意一项所述的方法制备的电极的用途,其特征在于,所述电极用于光电化学检测CaMV35S启动子。9. The use of the electrode prepared by the method according to any one of claims 1 to 8, characterized in that the electrode is used for photoelectrochemical detection of CaMV35S promoter.
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