CN105351778A - Improved bulb lamp - Google Patents
Improved bulb lamp Download PDFInfo
- Publication number
- CN105351778A CN105351778A CN201510807447.4A CN201510807447A CN105351778A CN 105351778 A CN105351778 A CN 105351778A CN 201510807447 A CN201510807447 A CN 201510807447A CN 105351778 A CN105351778 A CN 105351778A
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- oxide
- metal
- grid
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 351
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 49
- 238000005245 sintering Methods 0.000 claims description 38
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 33
- 229910052742 iron Inorganic materials 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052746 lanthanum Inorganic materials 0.000 claims description 11
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 11
- 229910052706 scandium Inorganic materials 0.000 claims description 11
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 11
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 10
- 239000008187 granular material Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 230000003321 amplification Effects 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 238000001291 vacuum drying Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 239000011572 manganese Substances 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 27
- 238000013461 design Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 18
- 239000000956 alloy Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000616 Ferromanganese Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000734 martensite Inorganic materials 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000037351 starvation Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/003—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V21/00—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The invention provides an improved bulb lamp and belongs to the technical field of lighting. The improved bulb lamp comprises a lamp holder, a lamp cap, a lampshade, a light-emitting mechanism and a control panel. The lamp cap is arranged below the lamp holder. A containing cavity is defined by the lampshade and the lamp holder. The light-emitting mechanism is arranged in the containing cavity. The light-emitting mechanism comprises multiple first light-emitting light sources horizontally placed and multiple second light-emitting light sources vertically arranged. Each light-emitting light source is a single LED bulb. All the light-emitting light sources are sequentially connected in series to form a single loop. The control panel is detachably arranged at the bottom of the lamp holder and provided with a linear constant-current LED drive chip electrically connected with the loop where the lamp cap and the light-emitting light sources are located. The linear constant-current LED drive chip comprises a band-gap reference module, a dimming module and a protective circuit module. The improved bulb lamp has the beneficial effects of being reasonable in design and good in lighting effect.
Description
Technical field
The invention belongs to lighting technical field, relate to the bulb lamp after a kind of improvement.
Background technology
Bulb lamp is the bulb spherical shape that outward appearance employing people have been accustomed to, and is the Novel energy-saving lamp of alternative conventional incandescent bulb, handsome in appearance, and what its internal light source was selected is LED lamp bead.
In prior art, most ball bulb lamp structure simplicity of design, causes its illuminating effect undesirable, cannot meet the demand of people to high-quality life.
In sum, for solving the deficiency on existing ball bulb lamp structure, need the bulb lamp designed after a kind of improvement of reasonable in design, good illumination effect.
Summary of the invention
The object of the invention is to there are the problems referred to above for existing technology, propose the bulb lamp after a kind of improvement of reasonable in design, good illumination effect.
Object of the present invention realizes by following technical proposal: the bulb lamp after a kind of improvement, comprising:
Lamp socket;
Lamp holder, is arranged on below lamp socket;
Lampshade, setting spherical in shape and surround formation accommodating cavity with lamp socket;
Lighting means, is arranged in accommodating cavity, and described lighting means comprises multiple second illuminating sources of multiple first illuminating source that level puts and vertical display, and each illuminating source is single led bulb, and each illuminating source is connected successively and formed single loop;
Control panel, is detachably arranged on bottom lamp socket, and described control panel is provided with the linear constant current LED drive chip be electrically connected with lamp holder and loop, illuminating source place respectively, and described linear constant current LED drive chip comprises:
Band-gap reference module, comprises the start-up circuit for activating reference voltage source, operational amplification circuit and for providing the reference voltage generating circuit of chip internal power supply;
Light-adjusting module, comprises linearity light adjusting circuit;
Protection circuit module, comprises thermal-shutdown circuit and Undervoltage lockout circuit, and described thermal-shutdown circuit and reference voltage generating circuit are electrically connected.
As a further improvement on the present invention, described second illuminating source is that multiple row is arranged, described lighting means comprise vertically arrange and with multiple row second illuminating source multiple stripe board one to one, each row second illuminating source is arranged in corresponding stripe board respectively, described stripe board surrounds formation circular ring and adjacent two stripe board are gap setting, in same row second illuminating source, adjacent two second illuminating sources are that gap is arranged.
Further improve as of the present invention, described lighting means also comprises and being horizontally disposed with and the circular slab be simultaneously connected with each stripe board, described first illuminating source to be arranged on circular slab and to arrange in multi-turn, adjacent two first illuminating sources are that gap is arranged, and the quantity of each circle the first illuminating source is successively decreased in multiple from outside to inside.
Further improve as of the present invention, described first illuminating source is that two circles are arranged, the the first illuminating source quantity being positioned at inner ring is three and these three first illuminating sources are that trisection is arranged along same circumference, the the first illuminating source quantity being positioned at outer ring is six, in outer ring, wherein three the first illuminating sources of three the first illuminating sources and inner ring are just to setting, and three the first illuminating source intervals remaining three the first illuminating sources and inner ring are arranged.
Further improve as of the present invention, gap between adjacent two second illuminating sources that same column is arranged is less than the gap between adjacent two first illuminating sources of same circle setting, described second illuminating source is set to nine row, wherein in three row second illuminating sources near circular slab arrange the second illuminating source respectively be positioned at three the first illuminating sources of inner ring just to setting.
As a further improvement on the present invention, described start-up circuit comprises resistance R1, first metal-oxide-semiconductor M1, second metal-oxide-semiconductor M2, 3rd metal-oxide-semiconductor M3, 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5, the drain electrode of described first metal-oxide-semiconductor M1 and the grid of the second metal-oxide-semiconductor M2 connect, the source ground of the first metal-oxide-semiconductor M1, the drain electrode of described second metal-oxide-semiconductor M2 and the grid of the 3rd metal-oxide-semiconductor connect, contact resistance R1 between the source electrode of described 3rd metal-oxide-semiconductor M3 and the grid of the second metal-oxide-semiconductor M2, the drain electrode of described 3rd metal-oxide-semiconductor M3 and the grid of the first metal-oxide-semiconductor M1 connect, the source ground of described second metal-oxide-semiconductor M2, the source electrode of described 3rd metal-oxide-semiconductor M3 connects operating voltage, the drain electrode of described 4th metal-oxide-semiconductor M4 is connected with the drain electrode of the 3rd metal-oxide-semiconductor M3, the source electrode of the 4th metal-oxide-semiconductor M4 is connected with the drain electrode of the 5th metal-oxide-semiconductor M5, the source ground of the 5th metal-oxide-semiconductor M5, the grid of the 4th metal-oxide-semiconductor M4 is connected with the drain electrode of the 4th metal-oxide-semiconductor M4, and the grid of the 5th metal-oxide-semiconductor M5 is connected with the drain electrode of the 5th metal-oxide-semiconductor M5,
Work as power supply electrifying, because the first metal-oxide-semiconductor M1 does not have conducting, the grid voltage of the second metal-oxide-semiconductor M2 can be driven high operating voltage, second metal-oxide-semiconductor M2 is drop-down for the grid voltage of the 3rd metal-oxide-semiconductor M3, the voltage of the grid of the 4th metal-oxide-semiconductor M4 and the grid of the 5th metal-oxide-semiconductor M5 raises, i.e. the 3rd metal-oxide-semiconductor M3, 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 conducting, circuit starts to power on, when after the first metal-oxide-semiconductor M1 conducting, the grid voltage of the second metal-oxide-semiconductor M2 is dragged down gradually, until the second metal-oxide-semiconductor M2 turns off, start-up circuit turns off, but the 3rd metal-oxide-semiconductor M3, 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 still conducting.
As a further improvement on the present invention, described operational amplification circuit comprises the first branch road be formed by connecting by the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7 and the 8th metal-oxide-semiconductor M8, the second branch road be formed by connecting by the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 and the 11 metal-oxide-semiconductor M11, and the 12 metal-oxide-semiconductor M12, the 13 metal-oxide-semiconductor M13 and the 14 metal-oxide-semiconductor M14;
In described first branch road, the drain electrode of the 6th metal-oxide-semiconductor M6 connects the drain electrode of the 7th metal-oxide-semiconductor M7, the source electrode of the 7th metal-oxide-semiconductor M7 connects the drain electrode of the 8th metal-oxide-semiconductor M8, the source ground of the 8th metal-oxide-semiconductor M8, the source electrode of described 6th metal-oxide-semiconductor M6 is connected with the source electrode of the 9th metal-oxide-semiconductor M9 and connects operating voltage, and the grid of the 6th metal-oxide-semiconductor M6 is connected with the grid of the 9th metal-oxide-semiconductor M9; In described second branch road, the drain electrode of the 9th metal-oxide-semiconductor M9 and the drain electrode of the tenth metal-oxide-semiconductor M10 connect, the source electrode of the tenth metal-oxide-semiconductor M10 connects the drain electrode of the 11 metal-oxide-semiconductor M11, the source ground of the 11 metal-oxide-semiconductor M11, the grid of described 7th metal-oxide-semiconductor M7 is connected with the grid of the tenth metal-oxide-semiconductor M10, and the grid of described 8th metal-oxide-semiconductor M8 is connected with the grid of the 11 metal-oxide-semiconductor M11;
The source electrode of described 12 metal-oxide-semiconductor M12 connects operating voltage, the grid of the 12 metal-oxide-semiconductor M12 connects the drain electrode of the 9th metal-oxide-semiconductor M9 and is connected to the grid of the 3rd metal-oxide-semiconductor M3, the drain electrode of the 12 metal-oxide-semiconductor M12 connects the source electrode of the 13 metal-oxide-semiconductor M13 and the 14 metal-oxide-semiconductor M14 respectively, the grid of the 13 metal-oxide-semiconductor M13 is all connected with reference voltage generating circuit with the grid of the 14 metal-oxide-semiconductor M14, the drain electrode of the 13 metal-oxide-semiconductor M13 connects the source electrode of the 7th metal-oxide-semiconductor M7 in the first branch road, and the drain electrode of the 14 metal-oxide-semiconductor M14 connects the source electrode of the tenth metal-oxide-semiconductor M10 in the second branch road;
When after the 3rd metal-oxide-semiconductor M3 conducting in start-up circuit, the also conducting thereupon of first branch road and the second branch road, after described first branch road conducting, be exaggerated the voltage Vx that the 13 metal-oxide-semiconductor M13 exports reference voltage generating circuit to, after second branch road conducting, be exaggerated the voltage Vy that the 14 metal-oxide-semiconductor M14 exports reference voltage generating circuit to.
As a further improvement on the present invention, described reference voltage generating circuit, comprise the 15 metal-oxide-semiconductor M15, 16 metal-oxide-semiconductor M16, 17 metal-oxide-semiconductor M17, first triode Q1, second triode Q2 and the 3rd triode Q3, the drain electrode of described 15 metal-oxide-semiconductor M15 is connected with the emitter stage of the first triode Q1 through a resistance R2, the drain electrode of described 16 metal-oxide-semiconductor M16 is connected with the emitter stage of the second triode Q2, described 17 metal-oxide-semiconductor M17 is connected with the emitter stage of the 3rd triode Q3 through a resistance R3, described 15 metal-oxide-semiconductor M15, the source electrode of the 16 metal-oxide-semiconductor M16 and the 17 metal-oxide-semiconductor M17 all connects operating voltage, 15 metal-oxide-semiconductor M15, the grid of the 16 metal-oxide-semiconductor M16 and the 17 metal-oxide-semiconductor M17 is all connected to the grid of the 3rd metal-oxide-semiconductor M3, described first triode Q1, second triode Q2 and the 3rd triode Q3 base stage are separately connected with respective emitter stage ground connection, the output voltage of the drain electrode of described 17 metal-oxide-semiconductor M17 is reference voltage,
After the voltage of the 3rd metal-oxide-semiconductor M3 grid reduces, the 15 metal-oxide-semiconductor M15 be connected with the 3rd metal-oxide-semiconductor M3 grid, the grid voltage of the 16 metal-oxide-semiconductor M16 and the 17 metal-oxide-semiconductor M17 is also dragged down, the branch road conducting at the 3rd metal-oxide-semiconductor M3 place, first triode Q1, the branch road conducting too at the second triode Q2 and the 3rd triode Q3 place, due to the 15 metal-oxide-semiconductor M15, 16 metal-oxide-semiconductor M16 forms the mirror-image structure of electric current, both gate-source voltage are equal, voltage Vx is equal with voltage Vy, thus the electric current flowing to the first triode Q1 and the second triode Q2 is equal, due to the emitter stage of the first triode being also connected to resistance R2, the circuit of resistance R2 place branch road can be obtained according to the respective emitter voltage difference of the first triode Q1 and the second triode Q2, the branch road at the 17 metal-oxide-semiconductor M17 and the 3rd triode Q3 place and the Mirroring of tributary at the 15 metal-oxide-semiconductor M15 and the first triode Q1 place, voltage on resistance R3 adds the voltage of the 3rd triode Q3 emitter stage, reference voltage can be obtained.
As a further improvement on the present invention, described linearity light adjusting circuit comprises enable control circuit, current source circuit and electric current and sinks circuit, and described enable control circuit comprises phase inverter one Inv1 and phase inverter two Inv2, the enable voltage V of two cascade arrangements
eNanti-phase through reverser one Inv1, be delivered to the grid of phase inverter two Inv2 and the 19 metal-oxide-semiconductor M19 and the grid of the 20 metal-oxide-semiconductor M20 respectively, enable voltage V
eNthe grid of the 18 metal-oxide-semiconductor M18 and the grid of the 21 metal-oxide-semiconductor M21 is exported to after reverser two Inv2 is again anti-phase, the drain electrode of described 18 metal-oxide-semiconductor M18 is connected with the drain electrode of the 19 metal-oxide-semiconductor M19, the source electrode of the 18 metal-oxide-semiconductor M18 is connected with the source electrode of the 21 metal-oxide-semiconductor M21, and right the source electrode of metal-oxide-semiconductor M18 is connected with the output of current source circuit, the source electrode of described 19 metal-oxide-semiconductor M19 is connected with the source electrode of the 20 metal-oxide-semiconductor, and the source electrode of the 19 metal-oxide-semiconductor M19 sinks the input of circuit as electric current, the drain electrode of described 20 metal-oxide-semiconductor M20 connects operating voltage, the grounded drain of described 21 metal-oxide-semiconductor M21, the electric current of the drain electrode end of described 18 metal-oxide-semiconductor M18 is the output current of linearity light adjusting circuit,
When output voltage and the electric current of current source circuit, to sink the input voltage of circuit equal, linearity light adjusting circuit external output current also not extraction circuit, do not play light modulation effect, when electric current sink the input voltage of circuit be greater than the output voltage of current source circuit time, linearity light adjusting circuit is from outer extraction electric current, and LED current increases, when electric current sink the input voltage of circuit be less than the output voltage of current source circuit time, the external output current of linearity light adjusting circuit, LED current reduces.
As another improvement of the present invention, described lamp holder is made up of manganeisen, described manganeisen comprises the component of following ratio of weight and number: iron: 100-300 part, manganese: 200-500 part, silicon: 50-80 part, carbon: 20-30 part, titanium carbide: 20-30 part, molybdenum: 10-20 part, scandium: 5-10 part, lanthanum: 5-10 part.
For improving the characteristic such as intensity, ductility, corrosion resistance of lamp holder, the lamp holder in the present invention prepared by employing manganeisen material.
As a further improvement on the present invention, the preparation method of the described manganeisen for lamp holder is as follows:
Iron powder is sieved, ferrous powder granules size is between 200-400 order, manganese powder is sieved, make manganese powder granular size be between 300-400 order;
Satisfactory iron powder, manganese powder and other compositions are put into after ball mill 2-3 hour and leave standstill 1 hour;
Vacuum drying;
Sieve;
500-700 degree vacuum-sintering 1 hour, 800-1000 degree vacuum-sintering 0.5 hour, 1100-1300 degree vacuum-sintering 0.5 hour, 1400-1500 degree vacuum-sintering 2 hours.
Based on technique scheme, the embodiment of the present invention at least can produce following technique effect:
1 integral structure layout is reasonable, the all parts of bulb lamp connects closely, sealing property is good, illuminating source adopts level and vertically staggered arrangement mode, decrease the stacked and staggered phenomenon of the light that illuminating source exhales, and the light that sends of Integral luminous mechanism spherically shape appear lampshade equably, the lighting angle that its lighting angle compares existing bulb lamp is larger, the light that illuminating source is sent can shine in environment for use more comprehensively, equably, and the light sent is dispersed more, not dazzling, make illuminating effect desirable.
2, in the present invention, be provided with linear constant current LED drive chip on the control panel, coordinate closely with lighting means, realize the Based Intelligent Control of bulb lamp, improve lighting quality and global illuminating effect, and there is not electrochemical capacitor in linear constant current LED drive chip, extend the service life of driving chip and illuminating source, peripheral component of the present invention is few, saves the space of circuit layout, reduces plate-making cost; The present invention adopts band-gap reference circuit to produce reliable and stable reference voltage and makes the performance of driving chip entirety more stable, significantly reduce the influence degree by temperature and voltage change.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail, wherein:
Fig. 1 is the structural representation of a preferred embodiment of the present invention.
Fig. 2 is the part-structure schematic diagram of a preferred embodiment of the present invention.
Fig. 3 is the structural representation at another visual angle of Fig. 2.
Fig. 4 is the schematic diagram of a preferred embodiment of the present invention neutral line constant-current LED driving chip.
Fig. 5 is the circuit theory diagrams of band-gap reference module in a preferred embodiment of the present invention.
Fig. 6 is the circuit theory diagrams of light-adjusting module in a preferred embodiment of the present invention.
Fig. 7 is the overall schematic diagram of light adjusting circuit of the present invention.
In figure, 10, lamp socket; 20, lamp holder; 30, lampshade; 40, accommodating cavity; 50, lighting means; 51, the first illuminating source; 52, the second illuminating source; 53, stripe board; 54, circular slab; 100, band-gap reference module; 110, start-up circuit; 120, operational amplification circuit; 130, reference voltage generating circuit; 200, light-adjusting module; 210, linearity light adjusting circuit; 211, enable control circuit; 212, current source circuit; 213, electric current sinks circuit; 300, protection circuit module; 310, thermal-shutdown circuit; 320, Undervoltage lockout circuit.
Detailed description of the invention
Be below specific embodiments of the invention and by reference to the accompanying drawings, technical scheme of the present invention is further described, but the present invention be not limited to these embodiments.
The present invention protects the bulb lamp after a kind of improvement, can be used for, in the lighting environment such as household, office, being also applicable in other lighting environments.
Existing most of ball bulb lamp structure simplicity of design, causes its illuminating effect undesirable, cannot meet the demand of people to high-quality life.Therefore, it is necessary for designing a kind of more rational bulb lamp.
Below in conjunction with the elaboration that Fig. 1 to Fig. 7 carries out specifically to technical scheme provided by the invention.
As shown in Figure 1 to Figure 3, the bulb lamp after this improvement comprises:
Lamp socket 10;
Lamp holder 20, is arranged on below lamp socket 10;
Lampshade 30, setting spherical in shape and surround with lamp socket 10 and form accommodating cavity 40 (shape of this accommodating cavity 40 is also for spherical);
Lighting means 50, be arranged in accommodating cavity 40, lighting means 50 comprises multiple second illuminating sources 52 of multiple first illuminating source 51 that level puts and vertical display, and each illuminating source is single led bulb, and each illuminating source is connected successively and formed single loop;
Control panel (not shown), is detachably arranged on bottom lamp socket 10, and control panel is provided with the linear constant current LED drive chip be electrically connected with lamp holder 20 and loop, illuminating source place respectively.
In the present invention, lampshade 30 is preferably water white transparency and arranges, reduce the interference to the light generation that illuminating source sends, during actual production also can on lampshade 30 alien invasion applying coating or lampshade 30 is directly made as band pigment the transparent body, with satisfied actual user demand, use flexibly, versatility is wide.
Further, for ease of installing, preferred lamp holder 20 arranges in the shape of a spiral and plates non-oxygen shaft floor on its outer surface, and is covered with fluorescent material in the local location painting of non-oxygen shaft floor, so that comparatively operation under dim environment or power-off condition.
In an initial condition, integral structure layout is reasonable for bulb lamp after this improvement, and all parts of bulb lamp connects closely, and sealing property is good; Above-mentioned illuminating source is preferably LED light source, and the level of employing and vertically staggered arrangement mode, decrease the stacked and staggered phenomenon of the light that illuminating source exhales, and the light that sends of Integral luminous mechanism 50 spherically shape appear lampshade 30 equably, the light that illuminating source is sent can shine in environment for use more comprehensively, equably, 120 ° of lighting angles that its lighting angle compares existing bulb lamp general are larger, its light sent is dispersed more, not dazzling and without stroboscopic phenomenon, make illuminating effect desirable.
For making the second illuminating source 52 distribute more evenly, reducing the stacked and interference of the light generation that Integral luminous mechanism 50 sends, ensureing illuminating effect and further room for promotion utilization rate, also making overall bulb lamp throw light on attractive in appearance.Preferred or the optional embodiment as one, preferably the second illuminating source 52 is arranged in multiple row, lighting means 50 comprise vertically arrange and with multiple row second illuminating source 52 multiple stripe board 53 one to one, each row second illuminating source 52 is arranged in corresponding stripe board 53 respectively, stripe board 53 is surrounded and is formed circular ring and the setting in gap of adjacent two stripe board 53, in same row second illuminating source 52, adjacent two second illuminating sources 52 are arranged in gap.
Corresponding, distribute more evenly for making the first illuminating source 51 and coordinate closely with the second illuminating source 52, reduce the stacked and interference of the light generation that Integral luminous mechanism 50 sends, ensure illuminating effect and further room for promotion utilization rate, also make overall bulb lamp throw light on attractive in appearance.Preferred or the optional embodiment as one, preferred lighting means 50 also comprises and being horizontally disposed with and the circular slab 54 be simultaneously connected with each stripe board 53, first illuminating source 51 to be arranged on circular slab 54 and to arrange in multi-turn, adjacent two first illuminating sources 51 are arranged in gap, and the quantity of each circle the first illuminating source 51 is successively decreased in multiple from outside to inside.
Such as: the first illuminating source 51 quantity of outmost turns is 12, then the quantity of circle first illuminating source 51 second from the bottom can be designed to six, this layout matches with the structure of globe holder 30 (shape of globe holder 30 is gathered to bottom by middle part), make the illuminating effect of overall bulb lamp desirable, avoid the generation of local focal phenomenon.
Further, for making the better ideal of the first illuminating source 51 illuminating effect and the reasonability of further room for promotion layout, preferably the first illuminating source 51 is arranged in two circles, the first illuminating source 51 quantity being positioned at inner ring is three and these three the first illuminating sources 51 are that trisection is arranged along same circumference, the first illuminating source 51 quantity being positioned at outer ring is six, in outer ring, wherein three the first illuminating sources 51 of three the first illuminating sources 51 and inner ring are just to setting, and three the first illuminating source 51 intervals remaining three the first illuminating sources 51 and inner ring are arranged.
Because the light of the second illuminating source 52 sends to circumferential direction, and the light of the first illuminating source 51 sends to the direction bottom globe holder 30, said structure is rationally distributed, reduce the photosphere that the first illuminating source 51 sends to fold, misplace and the ghost image produced or hot spot, ensure that illuminating effect and the aesthetics of bulb lamp.
Finer and closely woven, even for promoting the light that illuminating effect making sends, preferably, gap between adjacent two second illuminating sources 52 that same column is arranged is less than the gap between adjacent two first illuminating sources 51 of same circle setting, second illuminating source 52 is set to nine row, wherein in three row second illuminating sources 52 near circular slab 54 arrange the second illuminating source 52 respectively be positioned at three the first illuminating sources 51 of inner ring just to setting.
Such vibrational power flow, make vertical illuminating source arrangement more tight, the illuminating source arrangement of level circumference is relatively sparse, and tight with spherical lampshade 30 respective outer side edges, the light that entirety is sent is spherical in shape to be disperseed away equably.
In recent years, along with the fast development of China's LED lamp, associated industry especially LED drive circuit (driving chip) will inevitably be driven and well be developed.The quality of LED drive circuit directly affects the quality that govern LED light source, and even to this day, LED actuation techniques also achieves great breakthrough.Along with the development of enterprise, LED drive circuit is perfect gradually, and performance is promoted gradually.But so far LED drive circuit further develop still perplex by several large problem.What stand in the breach is exactly the life problems of LED drive circuit.Secondly improving conversion efficiency is also that LED drive circuit needs facing challenges.Particularly when driving high-power LED light source, if the conversion efficiency of LED drive circuit is too low, directly can affects the performance of LED energy-saving effect, affecting its illuminating effect and lighting quality.
Further, coordinate tightr for making control panel of the present invention with lighting means 50, improve lighting quality and global illuminating effect, shown in composition graphs 4 to Fig. 7, control panel is provided with the linear constant current LED drive chip be electrically connected with lamp holder 20 and loop, illuminating source place respectively.
Concrete, as shown in Figure 4, linear constant current LED drive chip comprises:
Band-gap reference module 100, comprises the start-up circuit 110 for activating reference voltage source, operational amplification circuit 120 and for providing the reference voltage generating circuit 130 of chip internal power supply;
Light-adjusting module 200, comprises linearity light adjusting circuit 210;
Protection circuit module 300, comprises thermal-shutdown circuit 310 and Undervoltage lockout circuit 320, and thermal-shutdown circuit 310 and reference voltage generating circuit 130 are electrically connected.
In the present invention, above-mentioned driving chip is linear constant current LED drive chip, sends light, achieve intelligentized experience by arranging driving chip and then controlling bulb lamp, easy to use and ensure that illuminating effect.
As shown in Figure 5, preferably, start-up circuit comprises resistance R1 and the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5, the drain electrode of the first metal-oxide-semiconductor M1 and the grid of the second metal-oxide-semiconductor M2 connect, the source ground of the first metal-oxide-semiconductor M1, the drain electrode of the second metal-oxide-semiconductor M2 and the grid of the 3rd metal-oxide-semiconductor connect, contact resistance R1 between the source electrode of the 3rd metal-oxide-semiconductor M3 and the grid of the second metal-oxide-semiconductor M2, the drain electrode of the 3rd metal-oxide-semiconductor M3 and the grid of the first metal-oxide-semiconductor M1 connect, the source ground of the second metal-oxide-semiconductor M2, the source electrode of the 3rd metal-oxide-semiconductor M3 connects operating voltage; The drain electrode of the 4th metal-oxide-semiconductor M4 is connected with the drain electrode of the 3rd metal-oxide-semiconductor M3, the source electrode of the 4th metal-oxide-semiconductor M4 is connected with the drain electrode of the 5th metal-oxide-semiconductor M5, the source ground of the 5th metal-oxide-semiconductor M5, the grid of the 4th metal-oxide-semiconductor M4 is connected with the drain electrode of the 4th metal-oxide-semiconductor M4, and the grid of the 5th metal-oxide-semiconductor M5 is connected with the drain electrode of the 5th metal-oxide-semiconductor M5;
Work as power supply electrifying, because the first metal-oxide-semiconductor M1 does not have conducting, the grid voltage of the second metal-oxide-semiconductor M2 can be driven high operating voltage, second metal-oxide-semiconductor M2 is drop-down for the grid voltage of the 3rd metal-oxide-semiconductor M3, the voltage of the grid of the 4th metal-oxide-semiconductor M4 and the grid of the 5th metal-oxide-semiconductor M5 raises, i.e. the 3rd metal-oxide-semiconductor M3, 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 conducting, circuit starts to power on, when after the first metal-oxide-semiconductor M1 conducting, the grid voltage of the second metal-oxide-semiconductor M2 is dragged down gradually, until the second metal-oxide-semiconductor M2 turns off, start-up circuit turns off, but the 3rd metal-oxide-semiconductor M3, 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 still conducting.
Preferably, operational amplification circuit comprises the first branch road be formed by connecting by the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7 and the 8th metal-oxide-semiconductor M8, the second branch road be formed by connecting by the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 and the 11 metal-oxide-semiconductor M11, and the 12 metal-oxide-semiconductor M12, the 13 metal-oxide-semiconductor M13 and the 14 metal-oxide-semiconductor M14;
In first branch road, the drain electrode of the 6th metal-oxide-semiconductor M6 connects the drain electrode of the 7th metal-oxide-semiconductor M7, the source electrode of the 7th metal-oxide-semiconductor M7 connects the drain electrode of the 8th metal-oxide-semiconductor M8, the source ground of the 8th metal-oxide-semiconductor M8, the source electrode of the 6th metal-oxide-semiconductor M6 is connected with the source electrode of the 9th metal-oxide-semiconductor M9 and connects operating voltage, and the grid of the 6th metal-oxide-semiconductor M6 is connected with the grid of the 9th metal-oxide-semiconductor M9; In second branch road, the drain electrode of the 9th metal-oxide-semiconductor M9 and the drain electrode of the tenth metal-oxide-semiconductor M10 connect, the source electrode of the tenth metal-oxide-semiconductor M10 connects the drain electrode of the 11 metal-oxide-semiconductor M11, the source ground of the 11 metal-oxide-semiconductor M11, the grid of the 7th metal-oxide-semiconductor M7 is connected with the grid of the tenth metal-oxide-semiconductor M10, and the grid of the 8th metal-oxide-semiconductor M8 is connected with the grid of the 11 metal-oxide-semiconductor M11;
The source electrode of the 12 metal-oxide-semiconductor M12 connects operating voltage, the grid of the 12 metal-oxide-semiconductor M12 connects the drain electrode of the 9th metal-oxide-semiconductor M9 and is connected to the grid of the 3rd metal-oxide-semiconductor M3, the drain electrode of the 12 metal-oxide-semiconductor M12 connects the source electrode of the 13 metal-oxide-semiconductor M13 and the 14 metal-oxide-semiconductor M14 respectively, the grid of the 13 metal-oxide-semiconductor M13 is all connected with reference voltage generating circuit with the grid of the 14 metal-oxide-semiconductor M14, the drain electrode of the 13 metal-oxide-semiconductor M13 connects the source electrode of the 7th metal-oxide-semiconductor M7 in the first branch road, and the drain electrode of the 14 metal-oxide-semiconductor M14 connects the source electrode of the tenth metal-oxide-semiconductor M10 in the second branch road;
When after the 3rd metal-oxide-semiconductor M3 conducting in start-up circuit, the also conducting thereupon of first branch road and the second branch road, after first branch road conducting, be exaggerated the voltage Vx that the 13 metal-oxide-semiconductor M13 exports reference voltage generating circuit to, after second branch road conducting, be exaggerated the voltage Vy that the 14 metal-oxide-semiconductor M14 exports reference voltage generating circuit to.
Preferably, reference voltage generating circuit comprises the 15 metal-oxide-semiconductor M15, 16 metal-oxide-semiconductor M16, 17 metal-oxide-semiconductor M17, first triode Q1, second triode Q2 and the 3rd triode Q3, the drain electrode of the 15 metal-oxide-semiconductor M15 is connected with the emitter stage of the first triode Q1 through a resistance R2, the drain electrode of the 16 metal-oxide-semiconductor M16 is connected with the emitter stage of the second triode Q2, 17 metal-oxide-semiconductor M17 is connected with the emitter stage of the 3rd triode Q3 through a resistance R3, 15 metal-oxide-semiconductor M15, the source electrode of the 16 metal-oxide-semiconductor M16 and the 17 metal-oxide-semiconductor M17 all connects operating voltage, 15 metal-oxide-semiconductor M15, the grid of the 16 metal-oxide-semiconductor M16 and the 17 metal-oxide-semiconductor M17 is all connected to the grid of the 3rd metal-oxide-semiconductor M3, first triode Q1, second triode Q2 and the 3rd triode Q3 base stage are separately connected with respective emitter stage ground connection, the output voltage of the drain electrode of the 17 metal-oxide-semiconductor M17 is reference voltage,
After the voltage of the 3rd metal-oxide-semiconductor M3 grid reduces, the 15 metal-oxide-semiconductor M15 be connected with the 3rd metal-oxide-semiconductor M3 grid, the grid voltage of the 16 metal-oxide-semiconductor M16 and the 17 metal-oxide-semiconductor M17 is also dragged down, the branch road conducting at the 3rd metal-oxide-semiconductor M3 place, first triode Q1, the branch road conducting too at the second triode Q2 and the 3rd triode Q3 place, due to the 15 metal-oxide-semiconductor M15, 16 metal-oxide-semiconductor M16 forms the mirror-image structure of electric current, both gate-source voltage are equal, voltage Vx is equal with voltage Vy, thus the electric current flowing to the first triode Q1 and the second triode Q2 is equal, due to the emitter stage of the first triode being also connected to resistance R2, the circuit of resistance R2 place branch road can be obtained according to the respective emitter voltage difference of the first triode Q1 and the second triode Q2, the branch road at the 17 metal-oxide-semiconductor M17 and the 3rd triode Q3 place and the Mirroring of tributary at the 15 metal-oxide-semiconductor M15 and the first triode Q1 place, voltage on resistance R3 adds the voltage of the 3rd triode Q3 emitter stage, reference voltage can be obtained.
As shown in Figure 6, further preferably, linearity light adjusting circuit 210 comprises enable control circuit 211, current source circuit 212 and electric current and sinks circuit 213, and enable control circuit 211 comprises phase inverter one Inv1 and phase inverter two Inv2, the enable voltage V of two cascade arrangements
eNanti-phase through reverser one Inv1, be delivered to the grid of phase inverter two Inv2 and the 19 metal-oxide-semiconductor M19 and the grid of the 20 metal-oxide-semiconductor M20 respectively, enable voltage V
eNthe grid of the 18 metal-oxide-semiconductor M18 and the grid of the 21 metal-oxide-semiconductor M21 is exported to after reverser two Inv2 is again anti-phase, the drain electrode of the 18 metal-oxide-semiconductor M18 is connected with the drain electrode of the 19 metal-oxide-semiconductor M19, the source electrode of the 18 metal-oxide-semiconductor M18 is connected with the source electrode of the 21 metal-oxide-semiconductor M21, and right the source electrode of metal-oxide-semiconductor M18 is connected with the output of current source circuit, the source electrode of the 19 metal-oxide-semiconductor M19 is connected with the source electrode of the 20 metal-oxide-semiconductor, and the source electrode of the 19 metal-oxide-semiconductor M19 sinks the input of circuit as electric current, the drain electrode of the 20 metal-oxide-semiconductor M20 connects operating voltage, the grounded drain of the 21 metal-oxide-semiconductor M21, the electric current of the drain electrode end of the 18 metal-oxide-semiconductor M18 is the output current of linearity light adjusting circuit.
As shown in Figure 7, when output voltage and the electric current of current source circuit, to sink the input voltage of circuit equal, linearity light adjusting circuit external output current also not extraction circuit, do not play light modulation effect, when electric current sink the input voltage of circuit be greater than the output voltage of current source circuit time, linearity light adjusting circuit is from outer extraction electric current, LED current increases, when electric current sink the input voltage of circuit be less than the output voltage of current source circuit time, the external output current of linearity light adjusting circuit, LED current reduces.
Further, in the present case, for improving the characteristic such as intensity, ductility, corrosion resistance of lamp holder 20, the lamp holder 20 in the present invention prepared by employing manganeisen material, this manganeisen comprises the component of following ratio of weight and number: iron: 100-300 part, manganese: 200-500 part, silicon: 50-80 part, carbon: 20-30 part, titanium carbide: 20-30 part, molybdenum: 10-20 part, scandium: 5-10 part, lanthanum: 5-10 part.
Iron powder and manganese powder are the main materials of manganeisen, both need to sieve, guarantee that iron powder is roughly consistent with the granularity of manganese powder, when ferrous powder granules size is between 200-400 order and when manganese powder granular size is between 300-400 order, iron powder and manganese powder can form austenite when vacuum-sintering, and carbon is coated on iron atom, the contact of starvation and iron atom, when ferrous powder granules is excessive, the alloy that cannot sinter alloy or sintering with manganese powder into very easily ruptures; When ferrous powder granules is too small, carbon will be difficult to be coated on iron atom, and iron atom is very easily oxidized or corrode; Equally when manganese powder particle is excessive or too small time, the alloy that cannot sinter alloy or sintering with iron powder into very easily ruptures.
Fault in manganeisen is formed by the slippage on slide surface of Shockley imperfect dislocation, and ε martensite is also with fault forming core, by imperfect dislocation expansion and grow up, from crystal structure, theoretical according to dislocation motion, ferromanganese ratio is in this application best.
When vacuum-sintering, progressively promote sintering temperature, progressively heat up through the mixed powder of ball mill, sintering alloy strength is out larger, and fragility reduces; If mixed for ball mill powder is directly lifted temperature to 1500 degree, will cause the alloy fracture of sintering, fragility obviously strengthens.
Embodiment one:
Iron 100 parts, 500 parts, manganese, silicon 80 parts, 20 parts, carbon, titanium carbide 20 parts, molybdenum 20 parts, scandium 10 parts, lanthanum 5 parts, make manganeisen through following step:
S1, iron powder to be sieved, ferrous powder granules size is between 200-400 order, manganese powder is sieved, make manganese powder granular size be between 300-400 order;
S2, satisfactory iron powder, manganese powder and other compositions put into ball mill and leave standstill 1 hour after 3 hours;
S3, vacuum drying;
S4, to sieve;
S5,500 degree of vacuum-sintering 1 hour, 800 degree of vacuum-sintering 0.5 hour, 1100 degree of vacuum-sintering 0.5 hour, 1400 degree of vacuum-sintering 2 hours.
Iron and manganese are the main constituent of manganeisen, and iron powder is very few, and the alloy strength of sintering will reduce, and iron powder is too much, and the alloy fragility of sintering strengthens, and intensity reduces; Manganese powder is too much, and alloy strength reduces, and manganese powder is very few, and alloy fragility strengthens, and intensity reduces; Silicon alloy plays the effect of deoxidation, greatly reduces the oxygen content in alloy, and silicon is too much, and will the intensity of alloy be caused to reduce, silicon be very few, does not have the effect of deoxidation, and alloy corrosion resistance can will reduce greatly; Carbon and titanium carbide fully will mix with iron powder in ball mill, iron atom will be wrapped up when vacuum-sintering, isolated iron atom and extraneous connection, but the metallographic do not destroyed between ferrimanganic, titanium carbide plays the effect adding strong hardness, and titanium carbide is too much, will destroy the connection between ferrimanganic, titanium carbide is very few, cannot reach the effect adding strong hardness; Carbon is too much, alloy fragility will be caused to increase, thus reduce its intensity; Carbon is very few, evenly cannot wrap up iron atom, causes corrosion resistance greatly to reduce; Molybdenum strengthens the effect of titanium carbide, and molybdenum makes manganeisen grain refinement simultaneously, and keep alloy strength when high temperature, molybdenum is very few, does not have above-mentioned effect, and molybdenum is too much, will destroy carbon-encapsulated iron atom; Scandium is for improving intensity and the hardness of manganeisen, and scandium crosses the intensity and hardness that cannot improve alloy at least, and scandium is too much, will destroy carbon-encapsulated iron atom, and cause corrosion resistance to reduce; Lanthanum increases the ductility of alloy, and lanthanum crosses the ductility cannot improving alloy at least, and lanthanum too much will destroy carbon-encapsulated iron atom, causes corrosion resistance to reduce.
Embodiment two:
Iron 300 parts, 200 parts, manganese, silicon 50 parts, 30 parts, carbon, titanium carbide 30 parts, molybdenum 10 parts, scandium 5 parts, lanthanum 10 parts, make manganeisen through following step:
S1, iron powder to be sieved, ferrous powder granules size is between 200-400 order, manganese powder is sieved, make manganese powder granular size be between 300-400 order;
S2, satisfactory iron powder, manganese powder and other compositions put into ball mill and leave standstill 1 hour after 2 hours;
S3, vacuum drying;
S4, to sieve;
S5,700 degree of vacuum-sintering 1 hour, 1000 degree of vacuum-sintering 0.5 hour, 1300 degree of vacuum-sintering 0.5 hour, 1500 degree of vacuum-sintering 2 hours.
Embodiment three:
Iron 200 parts, 400 parts, manganese, silicon 60 parts, 25 parts, carbon, titanium carbide 25 parts, molybdenum 15 parts, scandium 7 parts, lanthanum 8 parts, make manganeisen through following step:
S1, iron powder to be sieved, ferrous powder granules size is between 200-400 order, manganese powder is sieved, make manganese powder granular size be between 300-400 order;
S2, satisfactory iron powder, manganese powder and other compositions put into ball mill and leave standstill 1 hour after 2.5 hours;
S3, vacuum drying;
S4, to sieve;
S5,600 degree of vacuum-sintering 1 hour, 900 degree of vacuum-sintering 0.5 hour, 1200 degree of vacuum-sintering 0.5 hour, 1450 degree of vacuum-sintering 2 hours.
Comparative example one:
Iron 100 parts, 500 parts, manganese, silicon 80 parts, molybdenum 20 parts, scandium 10 parts, lanthanum 5 parts, make manganeisen through following step:
S1, iron powder to be sieved, ferrous powder granules size is between 200-400 order, manganese powder is sieved, make manganese powder granular size be between 300-400 order;
S2, satisfactory iron powder, manganese powder and other compositions put into ball mill and leave standstill 1 hour after 2 hours;
S3, vacuum drying;
S4, to sieve;
S5,500 degree of vacuum-sintering 1 hour, 800 degree of vacuum-sintering half an hour, 1100 degree of vacuum-sintering half an hour, 1400 degree of vacuum-sintering 2 hours.
Comparative example two:
Iron 50 parts, 600 parts, manganese, silicon 40 parts, 50 parts, carbon, titanium carbide 50 parts, molybdenum 50 parts, scandium 30 parts, lanthanum 30 parts, make manganeisen through following step:
S1, iron powder to be sieved, ferrous powder granules size is between 200-400 order, manganese powder is sieved, make manganese powder granular size be between 300-400 order;
S2, satisfactory iron powder, manganese powder and other compositions put into ball mill and leave standstill 1 hour after 2 hours;
S3, vacuum drying;
S4, to sieve;
S5,500 degree of vacuum-sintering 1 hour, 800 degree of vacuum-sintering half an hour, 1100 degree of vacuum-sintering half an hour, 1400 degree of vacuum-sintering 2 hours.
Table 1
| Sequence number | Salt mist experiment | Tension test | Bend test |
| Embodiment one | There is not erosion | Meet standard A STM E-8 | Indeformable |
| Embodiment two | There is not erosion | Meet standard A STM E-8 | Indeformable |
| Embodiment three | There is not erosion | Meet standard A STM E-8 | Indeformable |
| Comparative example one | There is macro-corrosion thing | Do not meet standard A STM E-8 | Indeformable |
| Comparative example two | There is a small amount of erosion | Do not meet standard A STM E-8 | Distortion |
As table 1 data can obtain, under this conditions of mixture ratios, the corrosion resistance of the lamp holder 20 obtained by manganeisen is strong, and intensity is large, ductility is good.
Specific embodiment described herein is only to the explanation for example of the present invention's spirit.Those skilled in the art can make various amendment or supplement or adopt similar mode to substitute to described specific embodiment, but can't depart from spirit of the present invention or surmount the scope that appended claims defines.
Claims (10)
1. the bulb lamp after improvement, is characterized in that: comprising:
Lamp socket;
Lamp holder, is arranged on below lamp socket;
Lampshade, setting spherical in shape and surround formation accommodating cavity with lamp socket;
Lighting means, is arranged in accommodating cavity, and described lighting means comprises multiple second illuminating sources of multiple first illuminating source that level puts and vertical display, and each illuminating source is single led bulb, and each illuminating source is connected successively and formed single loop;
Control panel, is detachably arranged on bottom lamp socket, and described control panel is provided with the linear constant current LED drive chip be electrically connected with lamp holder and loop, illuminating source place respectively, and described linear constant current LED drive chip comprises:
Band-gap reference module, comprises the start-up circuit for activating reference voltage source, operational amplification circuit and for providing the reference voltage generating circuit of chip internal power supply;
Light-adjusting module, comprises linearity light adjusting circuit;
Protection circuit module, comprises thermal-shutdown circuit and Undervoltage lockout circuit, and described thermal-shutdown circuit and reference voltage generating circuit are electrically connected.
2. the bulb lamp after a kind of improvement according to claim 1, it is characterized in that: described second illuminating source is that multiple row is arranged, described lighting means comprise vertically arrange and with multiple row second illuminating source multiple stripe board one to one, each row second illuminating source is arranged in corresponding stripe board respectively, described stripe board surrounds formation circular ring and adjacent two stripe board are gap setting, in same row second illuminating source, adjacent two second illuminating sources are that gap is arranged.
3. the bulb lamp after a kind of improvement according to claim 2, it is characterized in that: described lighting means also comprises and being horizontally disposed with and the circular slab be simultaneously connected with each stripe board, described first illuminating source to be arranged on circular slab and to arrange in multi-turn, adjacent two first illuminating sources are that gap is arranged, and the quantity of each circle the first illuminating source is successively decreased in multiple from outside to inside.
4. the bulb lamp after a kind of improvement according to claim 3, it is characterized in that: described first illuminating source is that two circles are arranged, the the first illuminating source quantity being positioned at inner ring is three and these three first illuminating sources are that trisection is arranged along same circumference, the the first illuminating source quantity being positioned at outer ring is six, in outer ring, wherein three the first illuminating sources of three the first illuminating sources and inner ring are just to setting, and three the first illuminating source intervals remaining three the first illuminating sources and inner ring are arranged.
5. the bulb lamp after a kind of improvement according to claim 4, it is characterized in that: the gap between adjacent two second illuminating sources that same column is arranged is less than the gap between adjacent two first illuminating sources of same circle setting, described second illuminating source is set to nine row, wherein in three row second illuminating sources near circular slab arrange the second illuminating source respectively be positioned at three the first illuminating sources of inner ring just to setting.
6. the bulb lamp after a kind of improvement according to claim 1 or 2 or 3 or 4 or 5, it is characterized in that: described start-up circuit comprises resistance R1, first metal-oxide-semiconductor M1, second metal-oxide-semiconductor M2, 3rd metal-oxide-semiconductor M3, 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5, the drain electrode of described first metal-oxide-semiconductor M1 and the grid of the second metal-oxide-semiconductor M2 connect, the source ground of the first metal-oxide-semiconductor M1, the drain electrode of described second metal-oxide-semiconductor M2 and the grid of the 3rd metal-oxide-semiconductor connect, contact resistance R1 between the source electrode of described 3rd metal-oxide-semiconductor M3 and the grid of the second metal-oxide-semiconductor M2, the drain electrode of described 3rd metal-oxide-semiconductor M3 and the grid of the first metal-oxide-semiconductor M1 connect, the source ground of described second metal-oxide-semiconductor M2, the source electrode of described 3rd metal-oxide-semiconductor M3 connects operating voltage, the drain electrode of described 4th metal-oxide-semiconductor M4 is connected with the drain electrode of the 3rd metal-oxide-semiconductor M3, the source electrode of the 4th metal-oxide-semiconductor M4 is connected with the drain electrode of the 5th metal-oxide-semiconductor M5, the source ground of the 5th metal-oxide-semiconductor M5, the grid of the 4th metal-oxide-semiconductor M4 is connected with the drain electrode of the 4th metal-oxide-semiconductor M4, and the grid of the 5th metal-oxide-semiconductor M5 is connected with the drain electrode of the 5th metal-oxide-semiconductor M5,
Work as power supply electrifying, because the first metal-oxide-semiconductor M1 does not have conducting, the grid voltage of the second metal-oxide-semiconductor M2 can be driven high operating voltage, second metal-oxide-semiconductor M2 is drop-down for the grid voltage of the 3rd metal-oxide-semiconductor M3, the voltage of the grid of the 4th metal-oxide-semiconductor M4 and the grid of the 5th metal-oxide-semiconductor M5 raises, i.e. the 3rd metal-oxide-semiconductor M3, 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 conducting, circuit starts to power on, when after the first metal-oxide-semiconductor M1 conducting, the grid voltage of the second metal-oxide-semiconductor M2 is dragged down gradually, until the second metal-oxide-semiconductor M2 turns off, start-up circuit turns off, but the 3rd metal-oxide-semiconductor M3, 4th metal-oxide-semiconductor M4 and the 5th metal-oxide-semiconductor M5 still conducting.
7. the bulb lamp after a kind of improvement according to claim 1 or 2 or 3 or 4 or 5, it is characterized in that: described operational amplification circuit comprises the first branch road be formed by connecting by the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7 and the 8th metal-oxide-semiconductor M8, the second branch road be formed by connecting by the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 and the 11 metal-oxide-semiconductor M11, and the 12 metal-oxide-semiconductor M12, the 13 metal-oxide-semiconductor M13 and the 14 metal-oxide-semiconductor M14;
In described first branch road, the drain electrode of the 6th metal-oxide-semiconductor M6 connects the drain electrode of the 7th metal-oxide-semiconductor M7, the source electrode of the 7th metal-oxide-semiconductor M7 connects the drain electrode of the 8th metal-oxide-semiconductor M8, the source ground of the 8th metal-oxide-semiconductor M8, the source electrode of described 6th metal-oxide-semiconductor M6 is connected with the source electrode of the 9th metal-oxide-semiconductor M9 and connects operating voltage, and the grid of the 6th metal-oxide-semiconductor M6 is connected with the grid of the 9th metal-oxide-semiconductor M9; In described second branch road, the drain electrode of the 9th metal-oxide-semiconductor M9 and the drain electrode of the tenth metal-oxide-semiconductor M10 connect, the source electrode of the tenth metal-oxide-semiconductor M10 connects the drain electrode of the 11 metal-oxide-semiconductor M11, the source ground of the 11 metal-oxide-semiconductor M11, the grid of described 7th metal-oxide-semiconductor M7 is connected with the grid of the tenth metal-oxide-semiconductor M10, and the grid of described 8th metal-oxide-semiconductor M8 is connected with the grid of the 11 metal-oxide-semiconductor M11;
The source electrode of described 12 metal-oxide-semiconductor M12 connects operating voltage, the grid of the 12 metal-oxide-semiconductor M12 connects the drain electrode of the 9th metal-oxide-semiconductor M9 and is connected to the grid of the 3rd metal-oxide-semiconductor M3, the drain electrode of the 12 metal-oxide-semiconductor M12 connects the source electrode of the 13 metal-oxide-semiconductor M13 and the 14 metal-oxide-semiconductor M14 respectively, the grid of the 13 metal-oxide-semiconductor M13 is all connected with reference voltage generating circuit with the grid of the 14 metal-oxide-semiconductor M14, the drain electrode of the 13 metal-oxide-semiconductor M13 connects the source electrode of the 7th metal-oxide-semiconductor M7 in the first branch road, and the drain electrode of the 14 metal-oxide-semiconductor M14 connects the source electrode of the tenth metal-oxide-semiconductor M10 in the second branch road;
When after the 3rd metal-oxide-semiconductor M3 conducting in start-up circuit, the also conducting thereupon of first branch road and the second branch road, after described first branch road conducting, be exaggerated the voltage Vx that the 13 metal-oxide-semiconductor M13 exports reference voltage generating circuit to, after second branch road conducting, be exaggerated the voltage Vy that the 14 metal-oxide-semiconductor M14 exports reference voltage generating circuit to.
8. the bulb lamp after a kind of improvement according to claim 1 or 2 or 3 or 4 or 5, it is characterized in that: described reference voltage generating circuit, comprise the 15 metal-oxide-semiconductor M15, 16 metal-oxide-semiconductor M16, 17 metal-oxide-semiconductor M17, first triode Q1, second triode Q2 and the 3rd triode Q3, the drain electrode of described 15 metal-oxide-semiconductor M15 is connected with the emitter stage of the first triode Q1 through a resistance R2, the drain electrode of described 16 metal-oxide-semiconductor M16 is connected with the emitter stage of the second triode Q2, described 17 metal-oxide-semiconductor M17 is connected with the emitter stage of the 3rd triode Q3 through a resistance R3, described 15 metal-oxide-semiconductor M15, the source electrode of the 16 metal-oxide-semiconductor M16 and the 17 metal-oxide-semiconductor M17 all connects operating voltage, 15 metal-oxide-semiconductor M15, the grid of the 16 metal-oxide-semiconductor M16 and the 17 metal-oxide-semiconductor M17 is all connected to the grid of the 3rd metal-oxide-semiconductor M3, described first triode Q1, second triode Q2 and the 3rd triode Q3 base stage are separately connected with respective emitter stage ground connection, the output voltage of the drain electrode of described 17 metal-oxide-semiconductor M17 is reference voltage,
After the voltage of the 3rd metal-oxide-semiconductor M3 grid reduces, the 15 metal-oxide-semiconductor M15 be connected with the 3rd metal-oxide-semiconductor M3 grid, the grid voltage of the 16 metal-oxide-semiconductor M16 and the 17 metal-oxide-semiconductor M17 is also dragged down, the branch road conducting at the 3rd metal-oxide-semiconductor M3 place, first triode Q1, the branch road conducting too at the second triode Q2 and the 3rd triode Q3 place, due to the 15 metal-oxide-semiconductor M15, 16 metal-oxide-semiconductor M16 forms the mirror-image structure of electric current, both gate-source voltage are equal, voltage Vx is equal with voltage Vy, thus the electric current flowing to the first triode Q1 and the second triode Q2 is equal, due to the emitter stage of the first triode being also connected to resistance R2, the circuit of resistance R2 place branch road can be obtained according to the respective emitter voltage difference of the first triode Q1 and the second triode Q2, the branch road at the 17 metal-oxide-semiconductor M17 and the 3rd triode Q3 place and the Mirroring of tributary at the 15 metal-oxide-semiconductor M15 and the first triode Q1 place, voltage on resistance R3 adds the voltage of the 3rd triode Q3 emitter stage, reference voltage can be obtained.
9. the bulb lamp after a kind of improvement according to claim 1 or 2 or 3 or 4 or 5, it is characterized in that: described lamp holder is made up of manganeisen, described manganeisen comprises the component of following ratio of weight and number: iron: 100-300 part, manganese: 200-500 part, silicon: 50-80 part, carbon: 20-30 part, titanium carbide: 20-30 part, molybdenum: 10-20 part, scandium: 5-10 part, lanthanum: 5-10 part.
10. the bulb lamp after a kind of improvement according to claim 9, is characterized in that: the preparation method of the described manganeisen for lamp holder is as follows:
Iron powder is sieved, ferrous powder granules size is between 200-400 order, manganese powder is sieved, make manganese powder granular size be between 300-400 order;
Satisfactory iron powder, manganese powder and other compositions are put into after ball mill 2-3 hour and leave standstill 1 hour;
Vacuum drying;
Sieve;
500-700 degree vacuum-sintering 1 hour, 800-1000 degree vacuum-sintering 0.5 hour, 1100-1300 degree vacuum-sintering 0.5 hour, 1400-1500 degree vacuum-sintering 2 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510807447.4A CN105351778A (en) | 2015-11-20 | 2015-11-20 | Improved bulb lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510807447.4A CN105351778A (en) | 2015-11-20 | 2015-11-20 | Improved bulb lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105351778A true CN105351778A (en) | 2016-02-24 |
Family
ID=55327806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510807447.4A Pending CN105351778A (en) | 2015-11-20 | 2015-11-20 | Improved bulb lamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105351778A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201795398U (en) * | 2010-09-20 | 2011-04-13 | 浙江亚宝光电科技有限公司 | Corn type LED lamp |
| CN102695332A (en) * | 2011-01-17 | 2012-09-26 | 辐射研究有限公司 | Hybrid power control system |
| CN102820009A (en) * | 2011-06-07 | 2012-12-12 | 友达光电股份有限公司 | Display backlight unit |
| CN102900963A (en) * | 2011-07-26 | 2013-01-30 | 深圳市讯宇创科技有限公司 | Multi-directional light-emitting lamp bulb |
| CN103484741A (en) * | 2013-09-27 | 2014-01-01 | 张家港保税区冠祥贸易有限公司 | Ferromanganese alloy and preparation technology thereof |
| CN103814624A (en) * | 2011-07-28 | 2014-05-21 | 克里公司 | Solid state lighting apparatus and methods of using integrated driver circuitry |
| CN103917011A (en) * | 2013-10-22 | 2014-07-09 | 新乡学院 | White LED drive system with soft start module |
| CN105072735A (en) * | 2015-06-10 | 2015-11-18 | 晶正照明科技有限公司 | Drive circuit for raising LED visual lighting effect |
-
2015
- 2015-11-20 CN CN201510807447.4A patent/CN105351778A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201795398U (en) * | 2010-09-20 | 2011-04-13 | 浙江亚宝光电科技有限公司 | Corn type LED lamp |
| CN102695332A (en) * | 2011-01-17 | 2012-09-26 | 辐射研究有限公司 | Hybrid power control system |
| CN102820009A (en) * | 2011-06-07 | 2012-12-12 | 友达光电股份有限公司 | Display backlight unit |
| CN102900963A (en) * | 2011-07-26 | 2013-01-30 | 深圳市讯宇创科技有限公司 | Multi-directional light-emitting lamp bulb |
| CN103814624A (en) * | 2011-07-28 | 2014-05-21 | 克里公司 | Solid state lighting apparatus and methods of using integrated driver circuitry |
| CN103484741A (en) * | 2013-09-27 | 2014-01-01 | 张家港保税区冠祥贸易有限公司 | Ferromanganese alloy and preparation technology thereof |
| CN103917011A (en) * | 2013-10-22 | 2014-07-09 | 新乡学院 | White LED drive system with soft start module |
| CN105072735A (en) * | 2015-06-10 | 2015-11-18 | 晶正照明科技有限公司 | Drive circuit for raising LED visual lighting effect |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104540263A (en) | Method and device for simulating daylight changing | |
| CN105351778A (en) | Improved bulb lamp | |
| Takei | Energy saving lighting efficiency technologies | |
| CN206207035U (en) | Bull combined lamp socket | |
| CN105351780A (en) | Intelligent bulb lamp | |
| CN102612226B (en) | LED (light emitting diode) energy-saving lamp with driver | |
| CN204372703U (en) | A kind of LED light supplementing lamp for plants | |
| CN105465634A (en) | Bulb lamp | |
| CN203147539U (en) | Annular LED lighting device | |
| CN110650567A (en) | Array management method of intelligent lamp | |
| CN105371128A (en) | Convenient bulb lamp | |
| CN105402617A (en) | Improved bulb light | |
| CN101975349A (en) | LED annular lighting tube with adjustable brightness | |
| CN201655185U (en) | Intelligent flexible light strip display screen device | |
| CN204829389U (en) | LED ball bubble | |
| CN2824495Y (en) | Piano key type multi-stage LED light modulating desk lamp | |
| CN202261928U (en) | A sub-ultrasonic energy-saving lamp | |
| CN205619188U (en) | Led luminescence apparatus | |
| Sudhir | LED illumination: A case study on energy conservation | |
| CN205155842U (en) | Support luminous LED panel light of side of three -section switch mixing of colors temperature | |
| Zhang et al. | TRIZ-based S-curve analysis of evolutionary trend of LED lights | |
| CN203784661U (en) | LED meat counter color mixing lamp tube | |
| CN109817609A (en) | A kind of color temperature-tunable LED tunnel lamp of dual chip | |
| CN206291001U (en) | LED dimming lamp | |
| CN206723886U (en) | Intelligent LED filament lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160224 |