CN105338693B - A kind of driving chip and single-stage high-power rate factor LED drive device - Google Patents
A kind of driving chip and single-stage high-power rate factor LED drive device Download PDFInfo
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- CN105338693B CN105338693B CN201510606138.0A CN201510606138A CN105338693B CN 105338693 B CN105338693 B CN 105338693B CN 201510606138 A CN201510606138 A CN 201510606138A CN 105338693 B CN105338693 B CN 105338693B
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Abstract
The invention discloses a kind of driving chip and single-stage high-power rate factor LED drive device, driving chip includes frequency control module and power supply module, frequency control module connection power supply module；The voltage that the D pin of driving chip input is powered to the VCC pin of its driving chip by power supply module, and the keying of driving chip is controlled according to the voltage swing of VCC pin；So as to save the setting of existing startup resistance, system space and cost are saved.Frequency control module controls the conducting and shut-off of power tube, and detects the working frequency for the GATE pin output that driving chip is reduced when line voltage is less than preset value, you can reduces power supply module and is lost caused by power supply, improves efficiency.
Description
Technical field
The present invention relates to switch power technology field, more particularly to a kind of driving chip and single-stage high-power rate factor
LED drive device.
Background technology
With the gradual maturation that AC-DC technologies develop, high efficiency turns into the key performance of AC-DC chips.
Fig. 1 is existing non-every structure chart of the type from single-stage LED drive system, including the rectifier bridge being made up of 4 diodes
11st, input capacitance Ca1, electric capacity of voltage regulation Ca2, load capacitance Ca3, driving chip 12, power tube Ma, startup resistance Ra1, sampling electricity
Hinder Ra2, feedback resistance string（Ra4 and Ra3）, inductance La, LED load Dx1 and sustained diode a；Inside each circuit module
Specific attachment structure is as shown in Figure 1.
Fig. 2 be existing isolated form single-stage LED drive system structure chart, including be made up of 4 diodes rectifier bridge 21,
Input capacitance Cb1, electric capacity of voltage regulation Cb2, load capacitance Cb3, driving chip 22, power tube Mb, startup resistance Rb1, sampling resistor
Rb2, armature winding Np, secondary windings Ns, armature winding freewheeling circuit 23, LED load Dx2 and sustained diode b；Each circuit
The specific attachment structure of inside modules is as shown in Figure 1.
In fig. 1 and 2, starting resistance (Ra1/Rb1) needs extra cost and system space.With high-pressure process
Continue to develop, the external high pressure JFET substitutions that starts resistance (Ra1/Rb1) and can be built.But on-Line Voltage VIN it is relatively low when,
Namely when line voltage VIN is in the both sides of ac input voltage envelope, in fixed power tube（Ma/Mb）In ON time,
Inductance La or armature winding Np peak point current can be gradually reduced even can be to 0, while working frequency（That is the switch frequency of power tube
Rate）It can be raised because the erasing time shortens, because working frequency rise causes power tube（Ma/Mb）Opening within the unit interval
Close number and become big, power tube（Ma/Mb）On-off times become the big switching loss for being intended to consumption and also become big, and power tube
（Ma/Mb）This switching loss of consumption both but is from, in built-in high pressure JFET power supplies, also implying that in these cases, interior
The high pressure JFET put loss can become big, and then system effectiveness can be caused to reduce, the adverse consequences such as chip heating.
It can be seen that existing driving chip power supply technique has yet to be improved and developed.
The content of the invention
The technical problem to be solved in the present invention is, for the drawbacks described above of prior art, there is provided a kind of driving chip and
Single-stage high-power rate factor LED drive device, it is intended to which the power supply circuit power consumption that solves existing driving chip is larger, cost is higher asks
Topic.
The technical proposal for solving the technical problem of the invention is as follows：
A kind of driving chip, is connected with power tube, and it includes frequency control module and power supply module；
The power supply module powers the voltage that the D pin of driving chip input to the VCC pin of its driving chip, and according to
The keying of the voltage swing control driving chip of VCC pin；The conducting of frequency control module control power tube and shut-off, and detection
When line voltage is less than preset value, reduce the working frequency that the GATE pin of driving chip export.
In described driving chip, the driving chip also includes power module, on the VCC pin by driving chip
Voltage conversion is that operating voltage is powered to frequency control module.
In described driving chip, the frequency control module includes：
Zero-crossing detector, at the end of judging current discharge in each cycle detection, export zero passage detection signal；
CS sample circuits, for carrying out voltage sample to the CS pin of driving chip, obtain sampled voltage；
Error amplifier, for reference voltage and the sampled voltage to be carried out into error amplification and export amplified signal；
Compensation circuit, for controlling the magnitude of voltage of amplified signal of the error amplifier output to keep stable；
Circuit of power factor correction, for the amplified signal generation ON time letter exported according to the error amplifier
Number；
CS voltage comparators, for compared with reference voltage, and the sampled voltage to be exported into comparison signal；
Frequency down circuit, for exporting PFM signals, and when detecting line voltage and being less than preset value, reduce the PFM signals of output
Frequency；
Drive module is controlled, for controlling the conducting and shut-off of power tube.
In described driving chip, the power supply module includes：
High pressure JFET is managed, for the voltage of the D pin input of driving chip to be powered to VCC pin；
VCC under-voltage comparators, the voltage swing for the VCC pin according to driving chip control the driving chip open or
Close.
In described driving chip, the CS voltage comparators include comparator and sample circuit；
The output end of the input connection CS sample circuits of the sample circuit, the output end connection comparator of sample circuit
Inverting input, the in-phase input end input reference voltage of comparator, comparator output end connection frequency down circuit and VCC owe
Press comparator.
In described driving chip, the frequency down circuit includes minimum turn-off time signal generation circuit and PFM signals produce
Raw circuit；
Comparison signal and PFM the signals production that the minimum turn-off time signal generation circuit exports according to CS voltage comparators
The PFM signal generation minimum turn-off time signals of raw electronic feedback；
The ON time signal that PFM signal generating circuits export according to circuit of power factor correction, zero-crossing detector output
Zero passage detection signal and the minimum turn-off time signal generation PFM signals.
In described driving chip, the minimum turn-off time signal generation circuit includes the first phase inverter, the first electric current
Source, first switch, second switch, third switch, the first electric capacity, the second electric capacity, the first trigger and first resistor；
The output end of the control terminal connection comparator of first switch, one end connection power end of first current source, the
The output end of other end connection first switch and the input of second switch of one current source；The input connection electricity of first switch
Source；The switch S3 of output end connection the 3rd of second switch input, the positive pole of the first electric capacity and the R of the first trigger
End, the output end of the 3rd switch connect the negative pole and ground of the first electric capacity, the D pin connection power end of the first trigger, the first triggering
The output end of the CLK pin connection PFM signal generating circuits of device, one end of the Q pin connection first resistor of the first trigger；First electricity
The control terminal of the other end connection second switch of resistance and the input of the first phase inverter, also pass through the second capacity earth.
In described driving chip, the PFM signal generating circuits include the second phase inverter, the 3rd phase inverter, the 4th anti-
Phase device, the 5th phase inverter, hex inverter, the 7th phase inverter, the first nor gate, the second nor gate, NAND gate, the 3rd electric capacity,
Second resistance, the second trigger and the 3rd trigger；
3rd phase inverter input connection circuit of power factor correction, the 3rd phase inverter output end connection with it is non-
One end of door, one end of other end connection second resistance of NAND gate and the QB pin of the second trigger, the output end of NAND gate connect
The input of the second phase inverter is connect, the output end of the second phase inverter connects one end of the second nor gate and the S pin of the 3rd trigger,
The Q pin of 3rd trigger connect the input of the 7th phase inverter, and the output end of the 7th phase inverter connects the first trigger
CLK pin, the R pin of the 3rd trigger connect the output end of the second nor gate, and the other end of the second nor gate connects the 4th phase inverter
Output end and the second trigger CLK pin, one end of the first nor gate connects the Q pin of the first trigger, the first nor gate
The other end connects zero-crossing detector, and the output end of the first nor gate connects the input of the 4th phase inverter；The second resistance
The other end connects the input of the 5th phase inverter, also by the 3rd capacity earth, and the output end connection the 6th of the 5th phase inverter is anti-
The input of phase device, the output end of hex inverter connect the R pin of the second trigger, the D pin connection power end of the second trigger.
A kind of single-stage high-power rate factor LED drive device, including rectifier bridge, inductive circuit, output loading, input capacitance,
VCC electric capacity and power tube, it also includes described driving chip, the input input ac voltage of the rectifier bridge, rectifier bridge
Output end connection driving chip D pin and input capacitance one end, input capacitance the other end ground connection, the VCC of driving chip
Pin connects one end of VCC electric capacity, and the other end of VCC electric capacity connects the GND pin and inductive circuit of driving chip, driving chip
GATE pin connect the grid of power tube, the CS pin and inductive circuit of the source electrode connection driving chip of power tube, the drain terminal of power tube
The D pin of driving chip, the FB pin connection inductive circuit of driving chip are connect, the inductive circuit connects output loading.
A kind of single-stage high-power rate factor LED drive device, including rectifier bridge, transformer circuit, output loading, input electricity
Appearance, VCC electric capacity, power tube and sampling resistor, it also includes described driving chip, the input input AC of the rectifier bridge
Voltage, the D pin of output end connection driving chip of rectifier bridge and one end of input capacitance, the other end ground connection of input capacitance, drive
The D pin connection transformer circuit of dynamic chip, one end of the VCC pin connection VCC electric capacity of driving chip, the other end of VCC electric capacity connect
Connect the GND pin of driving chip, the grid of the GATE pin connection power tube of driving chip；The source electrode connection driving chip of power tube
CS pin, also it is grounded by sampling resistor, the drain terminal connection transformer circuit of power tube, the transformer circuit connection output is negative
Carry.
Compared to prior art, driving chip and single-stage high-power rate factor LED drive device provided by the invention, pass through confession
Electric module powers the voltage that the D pin of driving chip input to the VCC pin of its driving chip, and according to the voltage swing of VCC pin
The keying of driving chip is controlled, so as to save the setting of existing startup resistance, saves system space and cost.FREQUENCY CONTROL
Module detection line voltage reduces the working frequency of the GATE pin output of driving chip when being less than preset value, and judges each cycle
Power tube conducting is controlled at the end of current discharge, you can reduce power supply module and be lost caused by power supply, improve efficiency.
Brief description of the drawings
Fig. 1 is existing non-every structure chart of the type from single-stage LED drive system.
Fig. 2 is existing every structure chart of the type from single-stage LED drive system.
Fig. 3 is the circuit diagram of the single-stage high-power rate factor LED drive device of non-isolation type provided by the invention.
Fig. 4 is the circuit diagram of the single-stage high-power rate factor LED drive device of isolated form provided by the invention.
Fig. 5 is the circuit diagram of driving chip provided by the invention.
Fig. 6 is the circuit diagram of CS voltage comparators in driving chip provided by the invention.
Fig. 7 is the circuit diagram of frequency down circuit in driving chip provided by the invention.
Fig. 8 is each signal waveform schematic diagram of frequency down circuit provided by the invention.
Fig. 9 is line voltage of the present invention and working frequency waveform diagram.
Embodiment
The present invention provides a kind of driving chip and single-stage high-power rate factor LED drive device, the list applied to AC/DC systems
Level high power factor LED drive device.By being improved to the structure of existing driving chip, by the driving chip after improving
The integrated high pressure JFET pipes in portion（Junction Field-Effect Transistor, junction field effect transistor）Supplied for VCC
Electricity, working frequency when being in the lower value of steamed bun envelope by reducing driving chip on-Line Voltage, so as to reduce high pressure
JFET pipes are lost caused by power supply, improve efficiency.To make the objects, technical solutions and advantages of the present invention more clear
Chu, clearly, the present invention is described in more detail for the embodiment that develops simultaneously referring to the drawings.It should be appreciated that tool described herein
Body embodiment only to explain the present invention, is not intended to limit the present invention.
The embodiment of the present invention provides a kind of single-stage high-power rate factor LED drive device, by isolated form and it is non-isolated exemplified by.Please
Refering to the circuit diagram of the single-stage high-power rate factor LED drive device of the non-isolation type shown in Fig. 3.The single-stage of the non-isolation type is high
Power factor (PF) LED drive device includes driving chip 100, rectifier bridge 200, inductive circuit 300, output loading 400, input capacitance
C1, VCC electric capacity C2 and power tube M1.
The input input ac voltage AC of the rectifier bridge 200, the output end connection driving chip 100 of rectifier bridge 200
D pin and input capacitance C1 one end, input capacitance C1 the other end ground connection, driving chip 100 VCC pin connection VCC electric capacity
C2 one end, the GND pin and inductive circuit 300 of VCC electric capacity C2 other end connection driving chip 100, driving chip 100
GATE pin connection power tube M1 grid, the CS pin and inductive circuit 300 of power tube M1 source electrode connection driving chip 100, work(
Rate pipe M1 drain terminal connects the D pin of driving chip 100.The FB pin connection inductive circuit 300 of driving chip 100, the inductive circuit
300 connection output loadings 400.
Wherein, the D pin of driving chip 100 are both its internal integrated power pipe（That is the high pressure JFET pipes in Fig. 5）Leakage
End, can power to the driving chip 100 again.
Refer to the circuit diagram of the single-stage high-power rate factor LED drive device of the isolated form shown in Fig. 4.As shown in figure 4, institute
Stating single-stage high-power rate factor LED drive device includes driving chip 10, rectifier bridge 20, transformer circuit 30, output loading 40, defeated
Enter electric capacity C11, VCC electric capacity C12, power tube M11 and sampling resistor R11.
The input input ac voltage AC of the rectifier bridge 20, the D of the output end connection driving chip 10 of rectifier bridge 20
One end of pin and input capacitance C11, input capacitance C11 other end ground connection, the D pin connection transformer circuit of driving chip 10
30, the VCC pin connection VCC electric capacity C12 of driving chip 10 one end, VCC electric capacity C12 other end connection driving chip 10
GND pin, the GATE pin connection power tube M11 of driving chip 10 grid；The CS of power tube M11 source electrode connection driving chip 10
Pin, also it is grounded by sampling resistor R11, power tube M11 drain terminal connection transformer circuit 30, the transformer circuit 30 connects
Output loading 40.
It is to be appreciated that above-mentioned rectifier bridge, inductive circuit, output loading, transformer circuit are prior art, it is right herein
Its internal circuit structure and annexation are not described further.The single-stage high-power rate factor LED drive device of isolated form and non-isolation type
In, driving chip 10 and driving chip 100 are identical driving chips, are the improvement project of the present embodiment.
Below by taking the single-stage high-power rate factor LED drive device of non-isolation type as an example, above-mentioned driving chip 100 is specifically described
Internal structure and its operation principle.Referring to Fig. 5, above-mentioned driving chip 100 includes overfrequency control module and power supply mould
Block；The frequency control module connects power supply module.The voltage that the power supply module inputs the D pin of driving chip 100 is to it
The VCC pin power supply of driving chip, and according to the keying of the voltage swing of VCC pin control driving chip；It is existing so as to save
Start the setting of resistance, save system space and cost.The frequency control module is used for the conducting and shut-off for controlling power tube,
And the working frequency for the GATE pin output that driving chip is reduced when line voltage is less than preset value is detected, it that is to say at detection line voltage
When the lower value of steamed bun envelope both sides, the switching frequency of the external power tube of GATE pin of driving chip is reduced；It can reduce
Power supply module is lost caused by power supply, improves efficiency.
In the present embodiment, the driving chip also includes power module, the power module connection power supply module and frequency
Control module；Voltage conversion on the VCC pin of driving chip is that operating voltage is supplied frequency control module by the power module
Electricity.
In the present embodiment, the frequency control module includes：Inductive current（Corresponding isolated form is then transformer current）'s
Zero-crossing detector 101, error amplifier 102, CS voltage comparators 103, CS sample circuits 104, controlling and driving circuits 105,
Compensation circuit 109, frequency down circuit 110 and the circuit of power factor correction 111 of error amplifier output.
The zero-crossing detector 101 connects the FB pin and frequency down circuit 110 of driving chip；The connection of CS sample circuits 104 is driven
CS pin, CS voltage comparators 103 and the inverting input of error amplifier 102 of dynamic chip；The output end of error amplifier 102 connects
Connect compensation circuit 109 and circuit of power factor correction 111；CS voltage comparators 103 connect frequency down circuit 110；Control and driving
Circuit 105 connects the GATE pin and frequency down circuit 110 of driving chip, and circuit of power factor correction 111 connects frequency down circuit 110.
The power supply module includes VCC under-voltage comparators 106 and high pressure JFET pipes 107.The VCC under-voltage comparators 106
Connect the VCC pin of driving chip；The high pressure JFET pipes 107 connect the VCC pin and D pin of driving chip.
Wherein, the zero-crossing detector 101 of the inductive current each cycle detection judge inductive current electric discharge at the end of,
Output zero passage detection signal is simultaneously input to frequency down circuit, produces PFM signals, to control the power tube next cycle to open, that is, detects
Inductance L1 electric discharges terminate just control power tube M1 conductings in Fig. 4, and inductance L1 is charged again.Such driving chip 100 can be protected
Card system is operated in critical conduction mode.
The CS sample circuits 104 are used to carry out voltage sample to the CS pin of driving chip, obtain sampled voltage CS.
The error amplifier 102 is used to put internal 200mV reference voltage and sampled voltage CS progress error
It is big and export amplified signal.
The compensation circuit 109 is used in system worked well, the amplified signal that control error amplifier 102 exports
Magnitude of voltage is maintained at a stable preset value, to reach the purpose for realizing LED current constant current.
The amplified signal generation that the circuit of power factor correction 111 is used to be exported according to the error amplifier 102 is led
Logical time signal TON.Incorporated by reference to Fig. 3, in inductive circuit 300, the peak point current of inductance can be expressed as Ipk=(VIN/L) *
TON, wherein, VIN is line voltage, and L is inductance value, it is seen that the peak value of inductive current changes with the change of line voltage envelope,
In other words, inductive current is consistent with line voltage phase, it is achieved thereby that high PFC values.
The CS voltage comparators 103 are used for the reference voltage CS_ for fixing the sampled voltage CS and internal voltage value
REF1 carries out Cycle by Cycle comparison, and exports comparison signal CSL, to control the frequency down circuit 410.
When the frequency down circuit 110 is in the lower value of steamed bun envelope both sides for on-Line Voltage, the PFM letters of output are reduced
Number frequency, to reduce power tube M1 switching frequency, reduce now power tube M1 switching loss, and then reduce JFET confessions
Electrical loss.
The PFM signals that the control drive module 405 exports according to frequency down circuit 110 control power tube M1 conducting and pass
It is disconnected.
The high pressure JFET pipes 107 are used to power the voltage that the D pin of driving chip input to VCC pin, and to external
VCC electric capacity C2 charging, play a part of driving chip power supply.
The VCC under-voltage comparators 106 control the driving chip to be turned on and off according to the size of VCC pin voltages.Example
Such as, when the voltage of VCC pin is less than the first preset value, VCC under-voltage comparators 106 control power module 108 to close, and driving chip breaks
It is electrically turn off；Conversely, when the voltage of VCC pin is more than the second preset value, VCC under-voltage comparators 106 control power module 108 to open,
Driving chip obtains electric-opening.
The power module 108 is to above-mentioned each circuit power supply（All circuit devcies power supply i.e. in frequency control module）,
Except VCC under-voltage comparators 106 and high pressure JFET pipes 107.
It is to be appreciated that above-mentioned zero-crossing detector 101, error amplifier 102, CS sample circuits 104, control and driving
Circuit 105, VCC under-voltage comparators 106, high pressure JFET pipes 107, internal electric source module 108, compensation circuit 109 and power factor
Correcting circuit 111 is prior art, and its internal circuit structure is not described further herein.
The present embodiment is to the improvement of driving chip 100, adds D pin.High pressure JFET pipes 107 shown in Fig. 5
The voltage of D pin is exported by VCC pin, the VCC electric capacity C2 shown in Fig. 3 is powered.D pin connect line voltage（I.e. shown in Fig. 3
The output end of rectifier bridge 200）.But D pin are directly connected with VCC pin by the high pressure JFET pipes 107 in Fig. 5, this use
The power supply mode of built-in high pressure JFET pipes can produce larger power consumption, particularly work as working frequency（That is the control of GATE pin output
The switching frequency of power tube M1 break-makes）When higher, the power consumption of high pressure JFET pipes is bigger, therefore, when how to reduce high frequency
JFET power consumptions turn into the key of this power supply mode.Then another improvement of the present embodiment is, to the He of CS voltage comparators 103
The circuit of frequency down circuit 110 is improved, and when being powered to reach high pressure JFET pipes to VCC electric capacity C2, it is online to reduce driving chip
Voltage is in the working frequency during lower value of steamed bun envelope both sides, you can reduces high pressure JFET pipes and is damaged caused by power supply
Consumption, improves efficiency.Now the energy of each periodic transfer of inductance is very small, so reducing on-Line Voltage is in steamed bun envelope two
Power tube M1 switching frequency during the lower value of side, PFC the and THD performances of system are not interfered with.
Also referring to Fig. 6, the CS voltage comparators 103 include comparator 1041 and sample circuit 1042.It is described to adopt
The output end of the input connection CS sample circuits 104 of sample circuit 1042, the output end connection comparator of sample circuit 1042
1041 inverting input, the in-phase input end input reference voltage CS_REF1 of comparator 1041, the output end of comparator 1041
Connect frequency down circuit 110.
When power tube M1 ON time signal TON immobilizes, sampled voltage CS voltage peak follows input
Line voltage envelope 1000 changes and changed（It is raised and lowered simultaneously）, as shown in the oscillogram on Fig. 6 left sides.Sample circuit
1042 are converted to the sampled voltage CS of input the level signal CSs corresponding to its voltage peak, and input the comparator
1041 inverting input, comparator 1041 in-phase input end connection inside reference voltage CS_REF1.When the level is believed
When number CSs is less than the reference voltage CS_REF1, the comparator 1041 exports height, i.e. comparison signal CSL is high level.When
When the level signal CSs is higher than the reference voltage CS_REF1, the output of comparator 1041 is low, i.e. comparison signal CSL is low
Level.Wherein, value is 0.3V to reference voltage CS_REF1 herein.
Also referring to Fig. 7, the frequency down circuit 110 includes minimum turn-off time signal generation circuit 1101 and PFM believes
Number generation circuit 1102.The minimum turn-off time signal generation circuit 111 include the first phase inverter A1, the first current source I1,
First switch S1, second switch S2, the 3rd switch S3, the first electric capacity C10, the second electric capacity C20, the first trigger DFF1（D is triggered
Device）With first resistor R1.
The output end of first switch S1 control terminal connection comparator 1041, one end connection electricity of the first current source I1
Source VDD, the first current source I1 other end connection first switch S1 output end and second switch S2 input；First opens
Close S1 input connection power end VDD；The switch S3 of output end connection the 3rd of second switch S2 input, the first electricity
Hold C10 positive pole and the first trigger DFF1 R ends, the 3rd switch S3 output end connects the first electric capacity C10 negative pole and ground,
First trigger DFF1 D pin connection power end VDD, the first trigger DFF1 CLK pin connection PFM signal generating circuits
1102 output end, the first trigger DFF1 Q pin（The output pin of minimum turn-off time signal generation circuit 1101, output is most
Small turn-off time signal min_toff）Connect first resistor R1 one end；First resistor R1 other end connection second switch S2
Control terminal and the first phase inverter A1 input, also pass through the second electric capacity C20 ground connection.
The PFM signal generating circuits 1102 include the second phase inverter A2, the 3rd phase inverter A3, the 4th phase inverter A4, the
Five phase inverter A5, hex inverter A6, the 7th phase inverter A7, the first nor gate NOR1, the second nor gate NOR2, NAND gate
NAND, the 3rd electric capacity C30, second resistance R2, the second trigger DFF2 and the 3rd trigger RS1（Rest-set flip-flop）.
The input connection circuit of power factor correction 111 of the 3rd phase inverter A3（Input TON）, the 3rd phase inverter A3
Output end connection NAND gate NAND one end, NAND gate NAND other end connection second resistance R2 one end and the second triggering
Device DFF2 QB pin, NAND gate NAND output end connect the second phase inverter A2 input, the second phase inverter A2 output end
The second nor gate NOR2 one end and the 3rd trigger RS1 S pin are connected, the Q pin connection the 7th of the 3rd trigger RS1 is anti-
Phase device A7 input, the 7th phase inverter A7 output end connect the first trigger DFF1 CLK pin, the 3rd trigger RS1 R
Pin connects the second nor gate NOR2 output end, the second nor gate NOR2 other end connect the 4th phase inverter A4 output end and
Second trigger DFF2 CLK pin, the first nor gate NOR1 one end connect the first trigger DFF1 Q pin, the first nor gate
NOR1 other end connection zero-crossing detector（For inputting zero passage detection signal ZCD）, the first nor gate NOR1 output end company
Connect the 4th phase inverter A4 input；The other end of the second resistance R2 connects the 5th phase inverter A5 input, also passed through
3rd electric capacity C30 is grounded, and the 5th phase inverter A5 output end connection hex inverter A6 input, hex inverter A6's is defeated
Go out the second trigger DFF2 of end connection R pin, the second trigger DFF2 D pin connection power end VDD.
With reference to Fig. 7 and be described above understand, frequency down circuit is made up of two parts, including minimum turn-off time signal（min_
toff）Generation circuit 1101 and PFM signal generating circuits 1102.Minimum turn-off time signal min_toff effect is to ensure
System turns low in PFM signals by height, that is, in the certain time after power tube shut-off, power tube can not be opened；PFM signals
Effect be, control drive circuit, control the conducting and shut-off of power tube.As zero passage detection signal ZCD and minimum turn-off time
When signal min_toff is low level simultaneously, PFM signals switch to high level, power tube M1 conductings from low level；Between when closed
When signal TON is from high level to low level, PFM signals switch to low level by high level, and now power tube M1 is turned off.
When the CS comparators P1 detects level signal CSs higher than internal reference voltage CS_REF1, described first
S1 closures are switched, now the electric current to the first electric capacity C10 chargings is the first current source I1 and first switch S1.The minimum turn-off
Time signal min_toff high level part-time is shorter, the PFM signals in next cycle by zero passage detection signal ZCD low electricity
It is straight and even normally open.
When the CS comparators P1 detects level signal CSs less than internal reference voltage CS_REF1, first switch
S1 is opened.Now the electric current for the first electric capacity C10 chargings is only derived from the first current source I1.And small charging current can cause institute
State that the time of minimum turn-off time signal min_toff high level part is very long, and zero passage detection signal ZCD can not be normally-open
PFM signals but can just open after switching to low level from high level by min_toff signals so that PFM signals are from low electricity
Flat turn postpones for the time of high level, that is, reduces the frequency of PFM signals, and driving chip enters discontinuous current mode work
Operation mode.
Simulation waveform corresponding to the operation principle of above-mentioned frequency down circuit is as shown in figure 8, when level signal CSs is less than inside
Reference voltage CS_REF1 when, PFM signal frequencies reduce, finally result in power tube M1 switching frequency reduce, reduce low line
The switching loss of power tube during voltage.Fig. 9 show the relation waveform diagram of driving chip working frequency and line voltage, in T1
And chip is in discontinuous mode, working frequency in T3 time zones（F）It is low, and in T2 time zones due to line voltage compared with
Height, chip operation is in critical current mode pattern, i.e. line voltage more senior engineer's working frequency is higher, and the lower working frequency of line voltage is more
It is low.
In summary, driving chip and single-stage high-power rate factor LED drive device provided by the invention, is not influenceing system
PFC and THD performances on the premise of, work when being in steamed bun envelope both sides lower value by reducing driving chip on-Line Voltage
Frequency, reduces the switching loss of power tube, and then reduces high pressure JFET current supply loss, improves efficiency.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved or converted according to the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect scope.
Claims (9)
1. a kind of driving chip, is connected with power tube, it is characterised in that including frequency control module and power supply module；
The power supply module powers the voltage that the D pin of driving chip input to the VCC pin of its driving chip, and according to VCC pin
Voltage swing control driving chip keying；The conducting of frequency control module control power tube and shut-off, and detection line electricity
Force down when preset value, reduce the working frequency that the GATE pin of driving chip export；
The frequency control module includes：
Zero-crossing detector, at the end of judging current discharge in each cycle detection, export zero passage detection signal；
CS sample circuits, for carrying out voltage sample to the CS pin of driving chip, obtain sampled voltage；
Error amplifier, for reference voltage and the sampled voltage to be carried out into error amplification and export amplified signal；
Compensation circuit, for controlling the magnitude of voltage of amplified signal of the error amplifier output to keep stable；
Circuit of power factor correction, the amplified signal for being exported according to the error amplifier generate ON time signal；
CS voltage comparators, for compared with reference voltage, and the sampled voltage to be exported into comparison signal；
Frequency down circuit, for exporting PFM signals, and when detecting line voltage and being less than preset value, reduce the frequency of the PFM signals of output
Rate；
Controlling and driving circuits, for controlling the conducting and shut-off of power tube.
2. driving chip according to claim 1, it is characterised in that the driving chip also includes power module, is used for
It is that operating voltage is powered to frequency control module by the voltage conversion on the VCC pin of driving chip.
3. driving chip according to claim 1, it is characterised in that the power supply module includes：
High pressure JFET is managed, for the voltage of the D pin input of driving chip to be powered to VCC pin；
VCC under-voltage comparators, the voltage swing for the VCC pin according to driving chip control the driving chip to open or close
Close.
4. driving chip according to claim 1, it is characterised in that the CS voltage comparators include comparator and sampling
Circuit；
The output end of the input connection CS sample circuits of the sample circuit, the output end of sample circuit connect the anti-of comparator
Phase input, the in-phase input end input reference voltage of comparator, the output end connection frequency down circuit of comparator.
5. driving chip according to claim 4, it is characterised in that the frequency down circuit includes minimum turn-off time signal
Generation circuit and PFM signal generating circuits；
The comparison signal and PFM signals that the minimum turn-off time signal generation circuit exports according to CS voltage comparators produce electricity
The PFM signal generation minimum turn-off time signals of road feedback；
The ON time signal that PFM signal generating circuits export according to circuit of power factor correction, the mistake of zero-crossing detector output
Zero detection signal and minimum turn-off time signal generation PFM signals.
6. driving chip according to claim 5, it is characterised in that the minimum turn-off time signal generation circuit includes
First phase inverter, the first current source, first switch, second switch, third switch, the first electric capacity, the second electric capacity, the first trigger
And first resistor；
The output end of the control terminal connection comparator of first switch, one end connection power end of first current source, the first electricity
The output end of other end connection first switch and the input of second switch in stream source；The input connection power supply of first switch
End；The switch S3 of output end connection the 3rd of second switch input, the positive pole of the first electric capacity and the R of the first trigger
End, the output end of the 3rd switch connect the negative pole and ground of the first electric capacity, the D pin connection power end of the first trigger, the first triggering
The output end of the CLK pin connection PFM signal generating circuits of device, one end of the Q pin connection first resistor of the first trigger；First electricity
The control terminal of the other end connection second switch of resistance and the input of the first phase inverter, also pass through the second capacity earth.
7. driving chip according to claim 6, it is characterised in that it is anti-phase that the PFM signal generating circuits include second
Device, the 3rd phase inverter, the 4th phase inverter, the 5th phase inverter, hex inverter, the 7th phase inverter, the first nor gate, second or non-
Door, NAND gate, the 3rd electric capacity, second resistance, the second trigger and the 3rd trigger；
The input connection circuit of power factor correction of 3rd phase inverter, the output end connection NAND gate of the 3rd phase inverter
One end, one end of other end connection second resistance of NAND gate and the QB pin of the second trigger, the output end connection the of NAND gate
The input of two phase inverters, the output end of the second phase inverter connects one end of the second nor gate and the S pin of the 3rd trigger, described
The Q pin of 3rd trigger connect the input of the 7th phase inverter, and the output end of the 7th phase inverter connects the CLK of the first trigger
Pin, the R pin of the 3rd trigger connect the output end of the second nor gate, and the other end of the second nor gate connects the defeated of the 4th phase inverter
Go out the CLK pin of end and the second trigger, one end of the first nor gate connects the Q pin of the first trigger, the first nor gate it is another
End connection zero-crossing detector, the output end of the first nor gate connect the input of the 4th phase inverter；The second resistance it is another
The input of the 5th phase inverter of end connection, also pass through the 3rd capacity earth, the output end connection hex inverter of the 5th phase inverter
Input, the output end of hex inverter connects the R pin of the second trigger, the D pin connection power end of the second trigger.
8. a kind of single-stage high-power rate factor LED drive device, including rectifier bridge, inductive circuit, output loading, input capacitance, VCC
Electric capacity and power tube, it is characterised in that also include driving chip as described in claim 1-7 is any, the rectifier bridge it is defeated
Enter and hold input ac voltage, the D pin of the output end of rectifier bridge connection driving chip and one end of input capacitance, input capacitance it is another
One end is grounded, one end of the VCC pin connection VCC electric capacity of driving chip, the GND pin of the other end connection driving chip of VCC electric capacity
And inductive circuit, driving chip GATE pin connection power tube grid, power tube source electrode connection driving chip CS pin and
Inductive circuit, the drain electrode of power tube connect the D pin of driving chip, the FB pin connection inductive circuit of driving chip, the inductive circuit
Connect output loading.
9. a kind of single-stage high-power rate factor LED drive device, including rectifier bridge, transformer circuit, output loading, input capacitance,
VCC electric capacity, power tube and sampling resistor, it is characterised in that also include the driving chip as described in claim 1-7 is any, institute
The input input ac voltage of rectifier bridge, the D pin of output end connection driving chip of rectifier bridge and one end of input capacitance are stated,
The other end ground connection of input capacitance, the D pin connection transformer circuit of driving chip, the VCC pin connection VCC electric capacity of driving chip
One end, the GND pin of the other end connection driving chip of VCC electric capacity, the grid of the GATE pin connection power tube of driving chip；Power
The CS pin of the source electrode connection driving chip of pipe, also it is grounded by sampling resistor, the drain electrode connection transformer circuit of power tube is described
Transformer circuit connects output loading.
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| CN201510606138.0A CN105338693B (en) | 2015-09-22 | 2015-09-22 | A kind of driving chip and single-stage high-power rate factor LED drive device |
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| CN201510606138.0A CN105338693B (en) | 2015-09-22 | 2015-09-22 | A kind of driving chip and single-stage high-power rate factor LED drive device |
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| CN105338693B true CN105338693B (en) | 2017-11-10 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106020314A (en) * | 2016-03-11 | 2016-10-12 | 浙江盾安人工环境股份有限公司 | Constant current drive circuit |
| CN106028557B (en) * | 2016-07-08 | 2018-01-05 | 上海灿瑞科技股份有限公司 | The constant current driver circuit for LED of the low total harmonic distortion of High Power Factor |
| CN110601683B (en) * | 2019-08-19 | 2023-02-10 | 麦歌恩电子(上海)有限公司 | Switch control circuit and control method |
| CN112039329A (en) * | 2020-09-28 | 2020-12-04 | 鑫金微半导体(深圳)有限公司 | Method for adjustable setting of starting and closing of primary power factor PFC circuit in switching power supply |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522903A (en) * | 2010-12-13 | 2012-06-27 | 成都成电硅海科技股份有限公司 | Switch-type multi-power supply management circuit |
| KR101164631B1 (en) * | 2012-04-05 | 2012-07-11 | 엠넥스텍 주식회사 | Led illumination control system and control method thereof |
| CN104238702A (en) * | 2013-06-07 | 2014-12-24 | 鸿富锦精密工业（深圳）有限公司 | Power supply circuit |
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2015
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522903A (en) * | 2010-12-13 | 2012-06-27 | 成都成电硅海科技股份有限公司 | Switch-type multi-power supply management circuit |
| KR101164631B1 (en) * | 2012-04-05 | 2012-07-11 | 엠넥스텍 주식회사 | Led illumination control system and control method thereof |
| CN104238702A (en) * | 2013-06-07 | 2014-12-24 | 鸿富锦精密工业（深圳）有限公司 | Power supply circuit |
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