CN105336857B - Multifunction Sensor based on hanging gate field effect transistor and preparation method and application - Google Patents

Abstract

The invention discloses a multifunctional sensor based on a floating gate field effect transistor, a preparation method and an application thereof. The structure of the field effect transistor sensor is as follows: the source electrode and the drain electrode are located on the substrate; the semiconductor layer covers the source electrode and the drain electrode and the area on the substrate that is not covered by the source electrode and the drain electrode; the insulating layer is located on the semiconductor layer above; the support is located on the insulating layer and partly covers the insulating layer; the grid covers the support and the area on the insulating layer not covered by the support. The sensor may also include a functional layer; the functional layer is located above the gate layer. The field-effect transistor structure based on the floating gate is suitable for the preparation of multifunctional sensors for detecting various physical signals, and has a wide range of applications; there is no specific requirement for semiconductor materials, and it is suitable for both inorganic and organic field-effect transistors, and has good versatility and excellent sensing performance.

Description

Multifunctional sensor based on floating gate field effect transistor and its preparation method and application

technical field

The invention relates to the field of transistor sensors, in particular to a multifunctional sensor based on a floating gate field effect transistor, a preparation method and application thereof.

Background technique

As a tool for people to perceive external signals and obtain information, sensors have important applications in various fields such as industrial production, aerospace, environmental safety, and daily life. According to the type of detected object, common sensors can be divided into chemical gas, biological, ion sensors and physical parameter sensors. At present, single physical parameter sensors or multifunctional sensors that detect signals such as pressure, temperature, acceleration, magnetic field, and sound waves have shown great application prospects, and have extensive practical value in production, life, health monitoring, and artificial intelligence. Gradually become one of the hot topics in sensor research (Sekitani T., Takamiya M., Noguchi Y., Nakano S., Kato Y., Sakurai T. and Someya T., Nat. Mater., 2007, 6, 413.; Schwartz G. , Tee B.C., Mei J., Appleton A.L., Kim do H., Wang H. and Bao Z., Nat. Commun., 2013, 4, 1859.).

As an electronic component widely used in the optoelectronic field, field effect transistor (FET) has the advantages of signal amplification, good stability, low noise, and easy regulation. In recent years, FETs have been widely used in physical parameter sensors, and the corresponding physical parameter sensors show high sensitivity and response accuracy. As an important branch of FET, organic field-effect transistor (OFET) has unique advantages such as good flexibility and low cost, and has broad application prospects in large-area matrix sensors for wearable health monitoring and artificial intelligence applications. It is worth noting that combining the designability of organic semiconductors and the flexible and variable device structure, various types of OFET sensors have been reported (Pang C., Lee G.-Y., Kim T.-i., Kim S. M., Kim H.N., Ahn S.-H. and Suh K.-Y., Nat. Mater., 2012, 11, 795.; Ramuz M., Tee B.C., Tok J.B. and Bao Z., Adv. Mater., 2012, 24, 3223.).

Most of the reported FET sensors are single physical parameter sensors, and the pressure sensor is one of the most reported physical parameter sensors recently. Although the main indicators of pressure sensors (sensitivity, detection limit, and response speed) have reached a relatively excellent level, there are still many problems in terms of device fabrication cost, flexibility, and power consumption. Compared with pressure sensors, the development of transistor-based high-precision temperature sensors, magnetometers, accelerometers, and acoustic wave sensors is slow, which limits their applications in multi-functional sensing and production and living fields. Therefore, the development of a multifunctional FET sensor based on a new and versatile device structure can detect a variety of signals, which can meet the application requirements of different sensors in the fields of health monitoring, artificial intelligence and environmental monitoring. In addition, multifunctional sensors are easier to integrate, which can greatly reduce the cost of device preparation, which is of great significance to promote the development of related applications.

Contents of the invention

The purpose of the present invention is to provide a multi-functional sensor based on floating gate field effect transistor, its preparation method and application.

The field effect transistor sensor provided by the present invention includes a substrate, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, a support, and a gate;

The structure of the sensor is as follows:

The source electrode and the drain electrode are located on the substrate;

The semiconductor layer covers the source electrode and the drain electrode and regions on the substrate not covered by the source electrode and the drain electrode;

the insulating layer is located on the semiconductor layer;

The support is located on the insulating layer and partially covers the insulating layer;

The gate covers the support and the area on the insulating layer not covered by the support.

Above-mentioned sensor also can only be made up of above-mentioned parts;

The sensor may also include a functional layer; the functional layer is located above the gate layer.

In the above sensor, the material constituting the substrate is glass, ceramics or polymer;

The materials constituting the gate, source electrode and drain electrode are all selected from any one of metals, ceramics, alloys, metal oxides, conductive composite materials, heavily doped semiconductors and conductive polymers;

Wherein, the metal is gold, silver, aluminum, nickel or copper;

The ceramics are silicon wafers;

The alloy material is magnesium-silver alloy, platinum alloy, tin foil alloy, aluminum foil alloy, manganese-nickel-copper alloy, nickel-titanium-aluminum alloy, nickel-chromium-iron alloy, nickel-manganese-iron alloy, nickel-iron alloy or nickel-zinc alloy;

The metal oxide is indium tin oxide, manganese dioxide or lead dioxide;

The conductive composite material is a nickel-chromium-iron alloy and a nickel-iron alloy composite bimetallic sheet, a manganese-nickel-copper alloy and a nickel-titanium alloy composite bimetallic sheet, or a nickel-manganese-iron alloy and a nickel-iron alloy composite bimetallic sheet;

The heavily doped semiconductor is phosphorus-doped silicon, boron-doped silicon or arsenic-doped silicon; wherein, the doping mass percentage concentration of phosphorus, boron or arsenic is 1-3%;

The conductive polymer is polyaniline, polypyrrole or polythiophene; wherein, the number average molecular weight of the polyaniline is 450-10 ⁶ , specifically 20000; the number average molecular weight of the polypyrrole is 300-10 ⁶ , specifically is 20000; the number average molecular weight of the polythiophene is 400-10 ⁶ , specifically 20000;

The material constituting the insulating layer is an inorganic insulating material or an organic insulating material;

Wherein, the inorganic insulating material is silicon dioxide or aluminum oxide;

Wherein, the organic insulating material is polydimethylsiloxane, transparent fluororesin, polymethyl methacrylate, polystyrene or polyvinylphenol; wherein, the molecular weight of polydimethylsiloxane is 800 -10 ⁶ , specifically 20000 and 60000; the molecular weight of the transparent fluororesin is 500-10 ⁶ , specifically 20000; the molecular weight of the polymethyl methacrylate is 500-10 ⁶ , specifically 20000; The molecular weight of styrene is 500-10 ⁶ , specifically 20,000; the molecular weight of polyvinylphenol is 500-10 ⁶ , specifically 20,000;

The material constituting the semiconductor layer is an inorganic semiconductor material and an organic semiconductor material with field effect transport properties;

Wherein, the inorganic semiconductor material is specifically carbon nanotubes, graphene, MoS ₂ or GeS;

The organic semiconductor material is specifically a small molecule material and a polymer material; the small molecule material is specifically NDI(2OD)(4tBuPh)-DTYM2, NDI3HU-DTYM2, copper phthalocyanine or pentacene; the polymer material is specifically It is P3HT or PBTT3T; the structural formula is shown in Figure 3;

The material constituting the support is polyimide, photoresist or polyacrylonitrile;

The material constituting the functional layer is a composite bimetallic sheet or a shape memory alloy; the composite bimetallic sheet is specifically a nickel-chromium-iron alloy and a nickel-iron alloy composite bimetallic sheet, a manganese-nickel-copper alloy and a nickel-titanium alloy composite bimetallic sheet or nickel Manganese-iron alloy and nickel-iron alloy composite bimetallic sheet.

The thickness of the substrate is 1-10000 μm, specifically 1-1000 μm, more specifically 100-1000 μm, and more specifically 800 μm;

The thickness of the semiconductor layer is 5-100nm, specifically 10-100nm, more specifically 20nm, 30nm or 20-30nm;

Both the thickness of the source electrode and the drain electrode are 10-300nm, specifically 10-50nm, more specifically 30nm;

The thickness of the insulating layer is 20-1000nm, specifically 50-500nm, more specifically 100nm;

The thickness of the support is 0.1-1000 μm, specifically 10-100 μm, more specifically 50 μm;

The thickness of the gate layer is 0.1-1000 μm, specifically 1-100 μm, more specifically 1-10 μm, most specifically 4 μm;

The thickness of the functional layer is 0.1-1000 μm, specifically 50-500 μm, more specifically 100 μm.

The method for preparing the field effect transistor sensor provided by the present invention comprises the following steps:

1) preparing a source electrode and a drain electrode on the substrate;

2) preparing a semiconductor layer on the source electrode and the drain electrode, so that the semiconductor layer covers the source electrode and the drain electrode and the area on the substrate not covered by the source electrode and the drain electrode;

3) preparing an insulating layer on the semiconductor layer;

4) preparing a support on the insulating layer, and making the support partially cover the insulating layer;

5) preparing a gate on the support to obtain the field effect transistor sensor;

or,

A functional layer is prepared on the gate obtained in step 5) to obtain the field effect transistor sensor.

In the above method, the materials constituting the substrate, source electrode, drain electrode, semiconductor layer, insulating layer, support, gate and functional layer are the same as defined above;

The thicknesses of the substrate, source electrode, drain electrode, semiconductor layer, insulating layer, support, gate and functional layer are the same as defined above.

The methods for preparing the source electrode and the drain electrode are vacuum thermal evaporation, magnetron sputtering or plasma enhanced chemical vapor deposition;

The methods for preparing the semiconductor layer are all drop coating, spin coating, pulling, thermal evaporation or inkjet printing;

The methods for preparing the insulating layer are all plasma-enhanced chemical vapor deposition, spin coating, thermal oxidation or thermal evaporation;

The method of preparing the support is photolithography, deposition or transfer;

The method of preparing the gate is transfer;

The method of preparing the functional layer is transfer.

In addition, the application of the organic field effect transistor sensor provided by the present invention in physical signal detection and the physical signal detector containing the organic field effect transistor sensor also belong to the protection scope of the present invention. Wherein, the physical signal is pressure, temperature, sound wave, acceleration or magnetic field;

The physical signal detector is a pressure sensor, a temperature sensor, an acoustic wave sensor, an accelerometer or a magnetometer.

The invention utilizes the grid with a suspended structure to deform the grid based on external stimuli, thereby realizing the sensing and detection of pressure, temperature, sound wave, acceleration and magnetic field.

The present invention has the following characteristics and advantages:

1. The field effect transistor structure based on the floating gate is suitable for preparing a multifunctional sensor for detecting various physical signals, and has a wide range of applications.

2. The multifunctional sensor based on the floating gate field effect transistor has no specific requirements for semiconductor materials, and is applicable to both inorganic and organic field effect transistors, and has good versatility.

3. Based on the above versatility, it is possible to screen out cheap semiconductor materials and prepare low-cost devices.

4. Since the gate is completely suspended, it is easily deformed under the action of external stimuli and is very sensitive, so the multifunctional sensor based on this structure has excellent sensing performance.

Description of drawings

Figure 1 is a schematic structural diagram of a multifunctional sensor (pressure sensor, temperature sensor, acoustic wave sensor, accelerometer and magnetometer) based on a floating gate field effect transistor; 1 is the substrate, 2 is the source electrode, 3 is the drain electrode, and 4 is the The semiconductor layer, 5 is an insulating layer, 6 and 7 are supports, and 8 is a gate.

2 is a schematic structural diagram of a temperature sensor based on a functional floating gate field effect transistor; 1 is a substrate, 2 is a source electrode, 3 is a drain electrode, 4 is a semiconductor layer, 5 is an insulating layer, 6 and 7 are supports, 8 is a gate, and 9 is a functional layer.

Fig. 3 is the molecular formula of the semiconductor material applied in the embodiment of the present invention;

Fig. 4 is the response curve of the source-drain current and time of the pressure sensor based on the foil grid of the present invention under the pressure of 700 Pa;

Fig. 5 is the response curve of the source-drain current and time under the pressure of 100-1000 Pa for the pressure sensor based on the foil grid of the present invention;

Fig. 6 is the variation curve of the sensitivity of the pressure sensor based on the foil grid of the present invention under the pressure of 100-1000 Pa with the concentration;

Fig. 7 is the response curve of the source-drain current and time of the pressure sensor based on the PET gate of the present invention exposed to a pressure of 500 Pa;

Fig. 8 is the response curve of the source-drain current and time of the temperature sensor of the present invention under the action of surface acoustic waves;

Fig. 9 is the response curve of the source-drain current and time of the temperature sensor of the present invention under the action of a temperature of 55 degrees Celsius;

Detailed ways

The present invention will be further described below in conjunction with specific examples, but the present invention is not limited to the following examples. The methods are conventional methods unless otherwise specified. The raw materials can be obtained from open commercial channels unless otherwise specified.

Example 1

1) After the glass substrate is ultrasonically rinsed with secondary water, ethanol and acetone, and blown dry with ^nitrogen , the Gold is vapor-deposited on the substrate at a speed of 30nm to obtain a source electrode and a drain electrode;

2) Spin-coat PBTT3T (see Figure 3) on the source electrode and drain electrode obtained in step 1) at a speed of 4000 rpm after rinsing with absolute ethanol and drying with nitrogen gas, and heat-treat on a hot stage for 10 minutes to obtain an organic semiconductor layer ;

3) Spin-coat CYTOP (see Figure 3) on the semiconductor layer obtained in step 2) at a speed of 2000rpm, and heat-treat on a hot stage for 1 hour to obtain an insulating layer;

4) Transfer a polyimide (PI) adhesive tape with a thickness of 50 microns to the insulating layer obtained in step 3) to obtain a support.

5) Transfer the tinfoil paper with a thickness of 4 microns to the support obtained in step 4) to obtain a suspended gate.

The structure of the device is shown in Figure 1, consisting of a substrate 1, a source electrode 2, a drain electrode 3, an organic semiconductor layer 4, an insulating layer 5, supports 6 and 7, and a gate 8;

Its structure is the following structure a:

The source electrode and the drain electrode are located on the substrate;

The semiconductor layer covers the source electrode and the drain electrode and the area on the substrate not covered by the source electrode and the drain electrode;

an insulating layer overlies the semiconducting layer;

The support is located on the insulating layer and partially covers the insulating layer;

The gate covers the support and the area on the insulating layer not covered by the support.

The material constituting the substrate is glass;

The material constituting the semiconductor layer is PBTT3T;

The materials constituting the source electrode and the drain electrode are all gold;

The material constituting the insulating layer is CYTOP;

The material constituting the grid is aluminum foil;

The material constituting the support is polyimide;

The thickness of the substrate is 800 μm;

The thickness of the semiconductor layer is 30nm;

Both the thickness of the source electrode and the drain electrode are 30nm;

The thickness of the insulating layer is 100nm;

The thickness of the support is 50 μm;

The thickness of the gate layer was 4 μm.

Example 2

The multifunctional sensor based on floating gate field effect transistors obtained in Example 1 is used to detect different physical signals.

1) Pressure sensor detection:

Put the sensor based on the floating gate field effect transistor obtained in Example 1 under the action of a pressure of 700 Pa, and the resulting source-drain current and time response curves are shown in Figure 4. It can be seen from the figure that when the pressure is applied to the device, the device The source-drain current rises rapidly, stop the pressurization, and the current recovers rapidly. It can be seen that the effective detection of pressure can be realized based on the above floating gate field effect transistor sensor.

Following the same steps as above, apply pressures of 100, 200, 300, 400, 500, 600, 700, 800, 900, and 1000 Pa in sequence.

The resulting response curve is shown in Figure 5, and the corresponding response sensitivity curve is shown in Figure 6.

It can be seen from the figure that the source-drain current variation of the device has a linear relationship with the pressure. It can be seen that based on the above device, quantitative detection within the pressure range of 100-1000 Pa can be realized.

2) Acoustic detection:

The above-mentioned sensor based on floating gate field effect transistor is placed on the surface of the speaker, and the response curve of source-drain current and time obtained when playing music is shown in Figure 7. It can be seen from the figure that the sound wave vibration will cause the source and drain current to fluctuate sensitively. It can be seen that based on the floating gate field effect transistor sensor, effective detection of sound waves can be realized.

3) Acceleration detection

Putting the field effect transistor based on the suspended gate above under a certain acceleration, the acceleration will cause the source and drain currents to fluctuate sensitively. It can be seen that based on the floating gate field effect transistor sensor above, effective detection of acceleration can be realized.

Example 3

According to the method of Example 1, only the tinfoil grid in step 5) was replaced with a nickel grid to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 1, except for the gate material.

The device is used to detect pressure, sound waves, and acceleration, and the results obtained are not substantially different from those in Example 2, and will not be repeated here.

The obtained sensor based on the floating gate field effect transistor is used to detect the magnetic field, and the above sensor based on the floating gate field effect transistor is placed in the magnetic field, and the introduction of the magnetic field will cause the source and drain currents to fluctuate sensitively. It can be seen that based on the floating gate field effect transistor sensor above, the effective detection of the magnetic field can be realized.

Example 4

According to the method of Example 1, only the tinfoil grid in step 5) is replaced with a bimetallic sheet to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 1, except for the gate material.

The device is used to detect the temperature, and the increase of the surface temperature of the device will cause the current to rise obviously. It can be seen that based on the floating gate field effect transistor sensor above, effective detection of temperature can be realized.

Example 5

According to the method of Example 1, the substrate in step 1) was replaced with a transparent PET substrate, and the tinfoil grid in step 5) was replaced with a transparent ITO/PET grid to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 1, the difference is only the substrate and the gate material.

Put the obtained sensor based on the floating gate field effect transistor under the action of 500 Pa pressure, and the response curve of the obtained source-drain current and time is shown in Figure 8. It can be seen from the figure that when the pressure is applied to the device, the source-drain of the device The current rises rapidly, the pressurization is stopped, and the current recovers rapidly. It can be seen that the effective detection of pressure can be realized based on the above floating gate field effect transistor sensor.

Using this device to detect sound waves and accelerations, the results obtained are not substantially different from those in Example 2, and will not be repeated here.

Example 6

1) After the glass substrate is ultrasonically rinsed with secondary water, ethanol and acetone, and blown dry with ^nitrogen , the Gold is vapor-deposited on the substrate at a speed of 30nm to obtain a source electrode and a drain electrode;

2) Spin-coat PBTT3T (see Figure 3) on the source electrode and drain electrode obtained in step 1) at a speed of 4000 rpm after rinsing with absolute ethanol and drying with nitrogen gas, and heat-treat on a hot stage for 10 minutes to obtain an organic semiconductor layer ;

3) Spin-coat CYTOP (see Figure 3) on the semiconductor layer obtained in step 2) at a speed of 2000rpm, and heat-treat on a hot stage for 1 hour to obtain an insulating layer;

4) Transfer a polyimide (PI) adhesive tape with a thickness of 50 microns to the insulating layer obtained in step 3) to obtain a support.

5) Transfer the tinfoil paper with a thickness of 4 microns to the support obtained in step 4) to obtain a suspended gate.

6) Transfer a 100-micron manganese-nickel-copper alloy and a nickel-titanium alloy composite bimetallic sheet to the grid obtained in step 5) to obtain a functional layer.

The structure of the device is shown in Figure 2, consisting of a substrate 1, a source electrode 2, a drain electrode 3, an organic semiconductor layer 4, an insulating layer 5, supports 6 and 7, a gate 8, and a functional layer 9; its structure is Structure b:

The source electrode and the drain electrode are located on the substrate;

The semiconductor layer covers the source electrode and the drain electrode and the area on the substrate not covered by the source electrode and the drain electrode;

an insulating layer overlies the semiconducting layer;

The support is located on the insulating layer and partially covers the insulating layer;

The gate covers the support and the area on the insulating layer that is not covered by the support;

The functional layer is located on the gate layer.

The material constituting the substrate is glass;

The material constituting the semiconductor layer is PBTT3T;

The materials constituting the source electrode and the drain electrode are all gold;

The material constituting the insulating layer is CYTOP;

The material constituting the grid is aluminum foil;

The material constituting the support is polyimide;

The material constituting the functional layer is bimetallic sheet of manganese-nickel-copper alloy and nickel-titanium alloy;

The thickness of the substrate is 800 μm;

The thickness of the semiconductor layer is 30nm;

Both the thickness of the source electrode and the drain electrode are 30nm;

The thickness of the insulating layer is 100nm;

The thickness of the support is 50 μm;

The thickness of the gate layer is 4 μm;

The thickness of the functional layer was 100 μm.

The obtained sensor based on floating gate field effect transistor is used to detect the temperature, and it is placed alternately at room temperature and 55 degrees Celsius ambient temperature, and the obtained response curve of source-drain current and time is shown in Fig. 9 . It can be seen from the figure that the increase of the surface temperature of the device will cause the current to rise significantly. It can be seen that based on the floating gate field effect transistor sensor above, effective detection of temperature can be realized.

Example 7

1) After the glass substrate is ultrasonically rinsed with secondary water, ethanol and acetone, and blown dry with ^nitrogen , the Gold is vapor-deposited on the substrate at a speed of 30nm to obtain a source electrode and a drain electrode;

2) Rinse with absolute ethanol, blow dry with nitrogen, and dry under the condition of vacuum degree of 7×10 ^-4 Pa The velocity vapor deposition pentacene (referring to Fig. 3), thickness is 20nm, obtains organic semiconductor layer;

3) Spin-coat CYTOP (see Figure 3) on the semiconductor layer obtained in step 2) at a speed of 2000rpm, and heat-treat on a hot stage for 1 hour to obtain an insulating layer;

4) Transfer a polyimide (PI) adhesive tape with a thickness of 50 microns to the insulating layer obtained in step 3) to obtain a support.

5) Transfer the tinfoil paper with a thickness of 4 microns to the support obtained in step 4) to obtain a suspended gate.

The structure of the device is shown in Figure 1, consisting of a substrate 1, a source electrode 2, a drain electrode 3, an organic semiconductor layer 4, an insulating layer 5, supports 6 and 7, and a gate 8; its structure is structure a:

Its structure is the following structure a:

The source electrode and the drain electrode are located on the substrate;

The semiconductor layer covers the source electrode and the drain electrode and the area on the substrate not covered by the source electrode and the drain electrode;

an insulating layer overlies the semiconducting layer;

The support is located on the insulating layer and partially covers the insulating layer;

The gate covers the support and the area on the insulating layer not covered by the support.

The material constituting the substrate is glass;

The material constituting the semiconductor layer is pentacene;

The materials constituting the source electrode and the drain electrode are all gold;

The material constituting the insulating layer is CYTOP;

The material constituting the grid is aluminum foil;

The material constituting the support is polyimide;

The thickness of the substrate is 800 μm;

The thickness of the semiconductor layer is 20nm;

Both the thickness of the source electrode and the drain electrode are 30nm;

The thickness of the insulating layer is 100nm;

The thickness of the support is 50 μm;

The thickness of the gate layer was 4 μm.

The device is used to detect pressure, sound waves, and acceleration, and the results obtained are not substantially different from those in Example 2, and will not be repeated here.

Example 8

According to the method of Example 1, only the PBTT3T in step 2) was replaced with the naphthalimide derivative NDI(2OD)(4tBuPh)-DTYM2 to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 1, except for the semiconductor layer.

The device is used to detect pressure, sound waves, and acceleration, and the results obtained are not substantially different from those in Example 2, and will not be repeated here.

Example 9

According to the method of Example 1, only the PBTT3T in step 2) is replaced with NDI3HU-DTYM2 to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 1, except for the semiconductor layer.

The device is used to detect pressure, sound waves, and acceleration, and the results obtained are not substantially different from those in Example 2, and will not be repeated here.

Example 10

According to the method of Example 1, only the PBTT3T in step 2) is replaced with carbon nanotubes to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 1, except for the semiconductor layer.

The device is used to detect pressure, sound waves, and acceleration, and the results obtained are not substantially different from those in Example 2, and will not be repeated here.

Example 11

According to the method of Example 1, only the PBTT3T in step 2) is replaced with P3HT to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 1, except for the semiconductor layer.

The device is used to detect pressure, sound waves, and acceleration, and the results obtained are not substantially different from those in Example 2, and will not be repeated here.

Example 12

According to the method of Example 6, only the pentacene in step 2) was replaced with copper phthalocyanine to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 6, except for the semiconductor layer.

The device is used to detect pressure, sound waves, and acceleration, and the results obtained are not substantially different from those in Example 2, and will not be repeated here.

Example 13

According to the method of Example 1, only the gate thickness in step 5) is replaced by 10 microns, and the multifunctional sensor provided by the present invention is obtained.

The structure of the device is the same as that of the device obtained in Example 1, the only difference being the thickness of the gate.

The device is used to detect pressure, sound waves, and acceleration, and the results obtained are not substantially different from those in Example 2, and will not be repeated here.

Example 14

According to the method of Example 1, only the tinfoil grids in step 5) were replaced with stainless steel grids with thicknesses of 30, 50, and 100 microns respectively to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 1, the only difference being the gate material and thickness.

The device is used to detect pressure, sound waves, and acceleration, and the results obtained are not substantially different from those in Example 2, and will not be repeated here.

Example 15

According to the method of Example 5, only the PBTT3T in step 2) was replaced with the naphthalimide derivative NDI(2OD)(4tBuPh)-DTYM2 to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 5, except for the semiconductor layer.

The device is used to detect the temperature, and the result obtained is not substantially different from that of Example 5, so details will not be repeated here.

Example 16

According to the method of Example 5, only the functional layer of the bimetallic sheet in step 6) is replaced with a temperature shape memory alloy to obtain the multifunctional sensor provided by the present invention.

The structure of the device is the same as that of the device obtained in Example 5, except for the functional layer.

The device is used to detect the temperature, and the result obtained is not substantially different from that of Example 5, so details will not be repeated here.

Claims (9)

1. A field effect transistor sensor includes a substrate, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, a support, and a gate;

the structure of the sensor is as follows:

the source electrode and the drain electrode are positioned on the substrate;

the semiconductor layer covers the source electrode and the drain electrode and the area of the substrate which is not covered by the source electrode and the drain electrode;

the insulating layer is positioned on the semiconductor layer;

the support is positioned above the insulating layer and partially covers the insulating layer;

the grid electrode covers the support and the area which is not covered by the support on the insulating layer;

the sensor further comprises a functional layer; the functional layer is positioned above the grid layer;

the grid electrode is a suspended grid electrode;

the substrate is made of glass, ceramic or polymer;

the materials for forming the grid electrode, the source electrode and the drain electrode are selected from any one of metal, ceramic, alloy, metal oxide, conductive composite material, heavily doped semiconductor and conductive polymer;

wherein the metal is gold, silver, aluminum, nickel or copper;

the ceramic is a silicon wafer;

the alloy material is magnesium-silver alloy, platinum alloy, tin foil alloy, aluminum foil alloy, manganese-nickel-copper alloy, nickel-titanium alloy, nickel-chromium-iron alloy, nickel-manganese-iron alloy, nickel-iron alloy or nickel-zinc alloy;

the metal oxide is indium tin oxide, manganese dioxide or lead dioxide;

the conductive composite material is a nickel-chromium-iron alloy and nickel-iron alloy composite bimetallic strip, a manganese-nickel-copper alloy and nickel-titanium alloy composite bimetallic strip or a nickel-manganese-iron alloy and nickel-iron alloy composite bimetallic strip;

the heavily doped semiconductor is phosphorus doped silicon, boron doped silicon or arsenic doped silicon; wherein the doping mass percentage concentration of phosphorus, boron or arsenic is 1-3%;

the conductive polymer is polyaniline, polypyrrole or polythiophene; wherein the number average molecular weight of the polyaniline is 450-10⁶(ii) a The number average molecular weight of the polypyrrole is 300-10⁶(ii) a The number average molecular weight of the polythiophene is 400-10⁶；

The material for forming the insulating layer is an inorganic insulating material or an organic insulating material;

wherein the inorganic insulating material is silicon dioxide or aluminum oxide;

wherein the organic insulating material is polydimethylsiloxane, transparent fluororesin, polymethyl methacrylate, polystyrene or polyvinyl phenol; wherein the molecular weight of the polydimethylsiloxane is 800-10⁶(ii) a The molecular weight of the transparent fluororesin is 500-10⁶(ii) a The molecular weight of the polymethyl methacrylate is 500-10⁶(ii) a The polystyrene has a molecular weight of 500-10⁶(ii) a The molecular weight of the polyvinyl phenol is 500-10⁶；

The materials for forming the semiconductor layer are inorganic semiconductor materials and organic semiconductor materials with field effect transmission performance;

the material for forming the support is polyimide, photoresist or polyacrylonitrile;

the functional layer is made of composite bimetallic strips or shape memory alloys.

2. The sensor of claim 1, wherein: the number average molecular weight of the polyaniline is 20000; the number average molecular weight of the polypyrrole is 20000; the number average molecular weight of the polythiophene is 20000;

the molecular weight of the polydimethylsiloxane is 20000 and 60000; the molecular weight of the transparent fluororesin is 20000; the molecular weight of the polymethyl methacrylate is 20000; the molecular weight of the polystyrene is 20000; the molecular weight of the polyvinyl phenol is 20000;

the inorganic semiconductor material of the semiconductor layer is carbon nano tube, graphene and MoS₂Or GeS;

the organic semiconductor material forming the semiconductor layer is a small molecule material and a polymer material; the small molecular material is NDI (2OD) (4tBuPh) -DTYM2, NDI3HU-DTYM2, copper phthalocyanine or pentacene; the polymer material is P3HT or PBTT 3T;

the composite bimetallic strip forming the functional layer is a nickel-chromium-iron alloy and nickel-iron alloy composite bimetallic strip, a manganese-nickel-copper alloy and nickel-titanium alloy composite bimetallic strip or a nickel-manganese-iron alloy and nickel-iron alloy composite bimetallic strip.

3. A sensor according to claim 1 or 2, wherein: the thickness of the substrate is 1-10000 μm;

the thickness of the semiconductor layer is 5-100 nm;

the thickness of the source electrode and the thickness of the drain electrode are both 10-300 nm;

the thickness of the insulating layer is 20-1000 nm;

the thickness of the support is 0.1-1000 μm;

the thickness of the gate layer is 0.1-1000 μm;

the thickness of the functional layer is 0.1-1000 μm.

4. A method of making a field effect transistor sensor according to any of claims 1 to 3, comprising the steps of:

1) preparing a source electrode and a drain electrode on a substrate;

2) preparing a semiconductor layer on the source electrode and the drain electrode, and enabling the semiconductor layer to cover the source electrode and the drain electrode and the area which is not covered by the source electrode and the drain electrode on the substrate;

3) preparing an insulating layer on the semiconductor layer;

4) preparing a support on the insulating layer, and enabling the support to partially cover the insulating layer;

5) preparing a grid on the support to obtain the field effect transistor sensor;

or,

and 5) preparing a functional layer on the gate obtained in the step 5) to obtain the field effect transistor sensor.

5. The method of claim 4, wherein: the methods for preparing the source electrode and the drain electrode are vacuum thermal evaporation, magnetron sputtering or plasma enhanced chemical vapor deposition;

the methods for preparing the semiconductor layer are all drop coating, spin coating, lifting, thermal evaporation or ink-jet printing methods;

the method for preparing the insulating layer is plasma enhanced chemical vapor deposition, spin coating, thermal oxidation or thermal evaporation;

the method for preparing the support is photoetching, deposition or transfer;

the method for preparing the grid electrode is transfer;

the method for preparing the functional layer is transfer.

6. Use of a field effect transistor sensor according to any of claims 1 to 3 for physical signal detection.

7. Use according to claim 6, characterized in that: the physical signal is pressure, temperature, sound wave, acceleration or magnetic field.

8. A physical signal detector comprising a field effect transistor sensor as claimed in any one of claims 1 to 3.

9. The physical signal detector of claim 8, wherein: the physical signal detector is a pressure sensor, a temperature sensor, a sound wave sensor, an accelerometer or a magnetometer.