CN105318278B - light emitting assembly - Google Patents

Abstract

The present invention discloses a light-emitting component, which has a light-emitting device and a wavelength conversion layer, wherein the light-emitting device has a first upper surface and a first side surface, and the wavelength conversion layer covers the first upper surface and has a second upper surface and a second side surface. The ratio of the distance between the first upper surface and the second upper surface to the distance between the first side surface and the second side surface is between 1.1 and 1.3.

Description

Lighting components

technical field

The invention relates to a light-emitting component, in particular to a light-emitting component with a light-emitting element and an optical element.

Background technique

Light-emitting diode (LED) light-emitting devices are gradually replacing traditional incandescent light sources due to their advantages of energy saving, environmental protection, long service life and small size.

Several types of light-emitting elements, such as lenses, reflectors, and wavelength converters, can be used to change the optical properties of the light-emitting device. Lenses can be used to collect or redistribute the light emitted by LEDs. The reflector can redirect the light emitted by the LED in the desired direction. Not only that, wavelength converters, such as phosphors, pigments or quantum dot materials, can convert the light emitted by LEDs into other colors.

Contents of the invention

A light-emitting component has a light-emitting device and a wavelength conversion layer. The light-emitting device has a first upper surface and a first side surface. The wavelength conversion layer covers the first upper surface and has a second upper surface and a second side surface. The ratio of the distance between the first upper surface and the second upper surface to the distance between the first side surface and the second side surface is between 1.1 and 1.3.

A light emitting component has a light emitting device, a first lens, a second lens and a wavelength conversion layer connected with the second lens. The first lens is located on the light-emitting device and has a first upper surface that bends toward a first direction. The second lens is located on the first lens and has an inner surface that bends toward a second direction. The first direction is aligned with the first direction. The two directions are different.

A light-emitting component has a first light-emitting device, a second light-emitting device, a diffusion layer covering the first light-emitting device and the second light-emitting device, a prism layer on the diffusion layer, and an LCD module on the prism layer. There is a distance between the second light emitting device and the first light emitting device. The first light emitting device or the second light emitting device has a light field on the LCD module, and the radius or characteristic length of the light field is twice or more than the distance between the first light emitting device and the second light emitting device.

Description of drawings

1A to 1H are schematic diagrams of a light emitting device in an embodiment of the present invention;

2A to 2D are schematic diagrams of the optical characteristics of the light emitting device in the embodiment of the present invention;

FIG. 3A is a schematic diagram of a light-emitting component in an embodiment of the present invention;

3B to 3C are structural diagrams in the embodiment of the present invention;

3D to 3E are schematic diagrams of the optical characteristics of the light-emitting component in the embodiment of the present invention;

4A to 4B are structural diagrams in an embodiment of the present invention;

4C to 4F are schematic diagrams of the structure and optical characteristics of the light-emitting component in the embodiment of the present invention;

5A to 5C are schematic diagrams of a light emitting device in an embodiment of the present invention;

6A to 6F are schematic diagrams of a light emitting device in an embodiment of the present invention;

7A to 7J are schematic diagrams of light-emitting components and related optical characteristics in an embodiment of the present invention;

8A to 8D are schematic diagrams of light-emitting components in an embodiment of the present invention;

9A to 9D are schematic diagrams of light-emitting components in an embodiment of the present invention;

10A to 10D are schematic diagrams of a light-emitting component according to an embodiment of the present invention;

11A to 11H are schematic diagrams of a light-emitting component and related optical characteristics according to an embodiment of the present invention;

12A to 12E are schematic diagrams of measurement equipment and related results according to an embodiment of the present invention;

Fig. 13 is a schematic diagram of a light emitting component according to an embodiment of the present invention.

Symbol Description

1000A, 1000B, 1000C, 1000D, 1000E, 1000F, 1000G, 1000H, 2000A, 2000B, 2000C, 2000D, 2000E, 2000F, 3000, 4000, 5000, 6000, 8000 light emitting devices

1003A, 1007A, 1007C, 1007E, 1008A, 1008C, 1008D, 1009B Lighting components

2 LEDs

3 particles

4, 40, 42, 44, 46, 48, 50, 52 wavelength conversion layer

6 transparent layer

8 transparent cover

10 carrier board

18 diffusion layer

20 prism layers

22 LCD modules

24 spectrometer

100 upper surface

120, 122 conductor part

140, 142 side walls

160, 162, 164, 166, 170a, 170b, 172, 174, 176, 180, 184 Lens

1740, 1840 Holes

1760, 1762 Wings

178a, 178b aperture

180 double convex lens

θ1, θ2 angles

L1, L2 light

E1, E2 edge

S1, S2 surfaces

U, U’ Uniformity

Detailed ways

FIG. 1A shows a schematic diagram of a light emitting device 1000A in an embodiment of the present invention. The light emitting device 1000A includes a light emitting diode 2 and a wavelength conversion layer 4 directly formed on the light emitting diode 2 and surrounding the light emitting diode 2 . The light emitting device 1000B has a transparent layer 6 formed between the wavelength conversion layer 4 and the light emitting diode 2 . The transparent layer 6 covers the upper surface and the side surface of the light emitting diode 2 and extends laterally to the edge of the light emitting device 1000B. Therefore, the light emitting diode 2 is separated from the wavelength conversion layer 4 by the transparent layer 6 .

The light emitting device 1000C has a transparent cover 8 formed on the wavelength converting layer 4 . The light emitting device 1000D has a transparent cover 8 , a wavelength converting layer 4 , a transparent layer 6 and a light emitting diode 2 stacked sequentially from top to bottom. The wavelength converting layer 4 of the light emitting device 1000D has a lower surface and an upper surface. The contour of the lower surface is consistent with or similar to the contour of the upper surface of the transparent layer 6 . The contour of the upper surface is consistent with or similar to the contour of the upper surface of the transparent cover 8 . In addition, the upper and lower surfaces of the wavelength conversion coating 4 may have the same or different profiles. The wavelength conversion layer 4 of the light emitting device 1000D has two surfaces (upper surface and lower surface) parallel to each other. The wavelength conversion layer 4 of the light emitting device 1000E is formed on the transparent layer 6 and has a lower surface close to the transparent layer 6 . The lower surface of the wavelength conversion layer 4 has a contour identical or similar to that of the upper surface of the transparent layer 6, while the upper surface of the wavelength conversion layer 4 has a flat contour, or is parallel to the upper surface of the light emitting device 1000E or the transparent cover 8. surface. The wavelength conversion layer 4 of the light-emitting device 1000E has a lower surface and a flat upper surface, wherein the lower surface roughly extends along the outline of the light-emitting diode 2 .

The light emitting device 1000F has a transparent layer 6 covering the upper surface and multiple side surfaces of the LED 2 . In one embodiment, each outer surface of the transparent layer 6 is parallel to the corresponding inner surface. In other words, the transparent layer 6 has a uniform thickness.

The light emitting device 1000G has a transparent layer 6 covering the upper surface and a plurality of side surfaces of the light emitting diode 2 . A wavelength conversion layer 4 covers the upper surface and multiple side surfaces of the transparent layer 6 . A transparent cover 8 with a rectangular cross section is formed on the upper surface of the wavelength converting layer 4 . The wavelength conversion layer 4 has an upper thickness above the LED 2 and a lateral thickness on the side of the LED 2 . The lateral thickness is greater than the upper thickness.

The LED 2 has an active layer to emit an anisotropic light. The light emitted from the LED 2 has a first light intensity, a first light field and a first color. The wavelength conversion layer 4 has a wavelength conversion material, and the particle size of the wavelength conversion material is 8-50 μm, such as 8, 17, 20, 32 or 46 μm. Particle size may refer to the radius or characteristic length of the particle. The transparent layer 6 and the transparent cover 8 have transparent materials, and at least 60% of the light emitted by the light-emitting diode 2 can pass through the transparent layer 6 or the transparent cover 8 without being absorbed, that is, the transparent layer 6 or the transparent cover 8 is relatively light-emitting The light emitted by the diode 2 has a transmittance of 60%. The light emitting devices 1000A˜1000H can emit a light with a second light intensity, a second light field and a second color. The second light intensity is smaller than the first light intensity because part of the light emitted from the LED is absorbed or trapped in the wavelength conversion layer 4 , the transparent layer 6 or the transparent cover 8 . The second light field can be the same as or different from the first light field. Light can be diffused and the light field can be changed by adding diffusing particles to the transparent layer 6 or the transparent cover 8 . In the aforementioned embodiments, the path of light rays can be reproduced by using a suitable simulation model, such as Monte Carlo ray tracing method. The transmission of light within the wavelength conversion layer 4 can also be reproduced using a simulation model according to Mie Scattering theory.

Referring to FIG. 1B and FIG. 1D , the transparent layer 6 has a curved profile. This curved contour protrudes curvedly on the upper surface of the light-emitting diode 2 . The wavelength conversion layer 4 is formed on the curved upper surface of the transparent layer 6, thus having a concave lower surface. The transparent layer 6 further has a lower surface with a profile similar to that of the LED 2 . Referring to FIG. 1F , FIG. 1G and FIG. 1H , the transparent layer 6 and the wavelength conversion layer 4 generally have a reverse-U (reversed-U) shape. Referring to FIG. 1H , the transparent cover 8 also has an inverted U shape. This inverted U shape has an upper portion and a side portion, wherein the side portion is thinner than the upper portion.

2A to 2D show the optical characteristics of the light emitting device in the embodiment of the present invention. FIG. 2A shows the light extraction efficiency (Light Extraction Efficiency) of the light emitting devices 1000A˜1000H. These light extraction efficiencies range from 100 to 140 lm/W. However, the light emitting device 1000F has the best light extraction efficiency. FIG. 2B shows the color temperature changes of the light fields of the light-emitting devices 1000A-1000H at +90°--90°. These variations range from 100 to 450K. Figures 2C-2D show the color changes at different angles in two different units, where Δu'v' is between 0.001-0.009, and Δy is between 0.01-0.1.

FIG. 3A shows a structure of a light emitting element 1003A according to an embodiment of the present invention. The light emitting component 1003A has a light emitting device 1000C formed on the upper surface 100 of the carrier 10 via the conductor portions 120 and 122 . The sidewalls 140 and 142 of the light emitting component 1003A may be Lambertian (Lambertian) scattering surfaces capable of scattering light, as shown in FIG. 3B . The upper surface 100 can be a surface with 90% reflectance and 10% absorbance, or a Lambertian surface that can scatter light, as shown in FIG. 3C . Figure 3D shows the degree of color change of eight light-emitting components (light-emitting devices 1000A to 1000H) with angles between +90° and -90°, wherein the eight light-emitting components have different types of upper surfaces 100 and side walls 142 state. Referring to FIG. 3D , when the sidewalls of the structure are Lambertian scattering surfaces, the structure provides poorer color space uniformity than when the sidewalls are flat surfaces.

FIG. 3E shows the light extraction efficiencies of the eight light-emitting components with different top surfaces 100 and sidewalls 140 . Each light-emitting component is measured under four different conditions. The first condition is that the upper surface 100 is a Lambertian scattering surface and the sidewalls 140 and 142 are planar. The second condition is that the top surface 100, side walls 140 and 142 are all Lambertian scattering surfaces. The third condition is that the upper surface 100 is a reflective surface, and the sidewalls 140 and 142 are planes, wherein the reflectivity of the upper surface 100 for the light from the LED is 90%. The fourth condition is that the top surface 100 is a reflective surface, and the sidewalls 140 and 142 are Lambertian scattering surfaces. According to FIG. 3D to FIG. 3E , the light-emitting assembly with the light-emitting device 1000F and the light-emitting assembly with the light-emitting device 1000B have a luminous efficiency greater than 130lm/W under the same conditions, and the color temperature difference is less than 0.04.

4A-4B show two structures of the embodiment of the present invention. When the thickness of the wavelength conversion layer in FIG. 4A and FIG. 4B increases, the luminous efficiency of the two structures increases, the color uniformity in the space also increases, and the color temperature uniformity of the two structures also increases. Not only that, the increase in the thickness of the wavelength conversion layer 4 has a more obvious effect on the structure in FIG. 4B . More specifically, when the thickness of the wavelength conversion layer 4 is increased from 100 μm to 300 μm, the light extraction efficiency of the structure in Figure 4B increases by 4.89%, ΔCCT decreases from 486K to 128K, and Δu'v' decreases from 0.0088 to 0.002. When the thickness of the wavelength conversion layer 4 increases from 100 μm to 400 μm, the luminous efficiency of the structure shown in FIG. 4A increases by 10.97%, ΔCCT decreases from 529K to 289K, and Δu’v’ decreases from 0.0089 to 0.0055. However, the structure in FIG. 4B only requires a small increase in the thickness of the wavelength conversion layer 4 to obtain approximately the same optical characteristics as the structure in FIG. 4A .

4C-4F show the structure and optical characteristics of the embodiments of the present invention. In FIGS. 4D to 4F , the abscissa represents optical characteristics, such as light extraction efficiency, color temperature change ΔCCT, and chromaticity spatial uniformity Δu'v'. The abscissa represents, as shown in FIG. 4C , the width W between the light emitting diode 2 and the wavelength conversion layer 4 . When the height H increases from 50 μm to 350 μm and the width W increases from 50 μm to 350 μm, the light extraction efficiency increases by about 7.53% from 135 lm/W, as shown in Figure 4D. As shown in Figure 4F, the chromaticity spatial uniformity Δu'v' drops from 0.02 to below 0.01, which is about 34.8% lower. As shown in Figure 4E, the color temperature change ΔCCT drops from around 1100K to below 500K. When the height H is greater than 250 μm, the light extraction efficiency can be significantly improved. When the height H is 50 µm and the width W is 150 µm, the chromaticity spatial uniformity Δu'v' is about 0.01.

5A-5C show the structural diagrams of the embodiments of the present invention. Referring to the structure in Figure 5A, when the height H is about 750 μm and the size of the light-emitting device is about ² ×2mm2, the light extraction efficiency is greater than 135lm/W, the chromaticity spatial uniformity Δu'v is about 0.04, and the color temperature change ΔCCT is about 200K. ^The light emitting device in Fig. ^5A can have more Good optical properties such as light extraction efficiency, chromaticity spatial uniformity Δu'v' and color temperature variation ΔCCT.

Referring to the structure of FIG. 5B , when the height H is 750 μm and the size of the light emitting device is about 1.8×1.8 mm ² , the chromaticity spatial uniformity Δu'v is about 0.02, and the color temperature change ΔCCT is about 100K. The light extraction efficiency is greater than 135 lm/W when the height H is 750 μm and the size of the light emitting device is about 2×2 mm ² . However, for the light-emitting device in Figure 5B, when the height H is 350 μm and the size of the light-emitting device is about 1.2×1.2 mm ² , or when the height H is 450 μm and the size of the light-emitting device is about 1.2×1.2 mm ² , there will be better optical properties, such as light extraction efficiency, chromaticity spatial uniformity Δu'v', and color temperature change ΔCCT.

Compared with the structure of FIG. 5B , the light emitting device in FIG. 5C is 450 μm and the size of the light emitting device is about 1.2× ^1.2 mm when the height H is 350 μm and the size of the light emitting device is about 1.2×1.2 mm ² , or when the height H is 750 μm and the size of the light-emitting device is about 1.4×1.4 mm ² , it can have better light extraction efficiency, chromaticity spatial uniformity Δu'v' and color temperature change ΔCCT and other optical properties. The light emitted by the light emitting device in FIGS. 5A to 5C has better optical characteristics under certain size and height conditions. For example, when the aspect ratio HWR (HWR=H/W) is between 1.1 and 1.3, the emitted light has good chromaticity space uniformity Δu'v', and when the aspect ratio HWR is greater than 0.7 When , the chromaticity space uniformity Δu'v' falls within 4 MacAdam ellipses (MacAdamellipse).

The light emitting devices in FIGS. 5A to 5C can be further arranged on the carrier 10 as shown in FIG. 3A , and the light emitted by these light emitting devices will be affected by the upper surface 100 . For example, when the reflectivity of the upper surface 100 decreases from 100% to 90%, the luminous efficiency decreases by 18.42%, 18.13% and 20.28%, respectively. In another embodiment, when the upper surface 100 is a Lambertian scattering surface, and the reflectivity decreases from 100% to 90%, the light extraction efficiency decreases by 11.56%, 12.14% and 11.93%, respectively. In another embodiment, when the color temperature of the light emitted by the light emitting device is changed from 6500K to 30000K, the light extraction efficiency decreases by 7.63%, 7.58% and 6.22% respectively compared with the color temperature of 6500K. 1, 3A-3B, 4A-4C or 5A-5C, the characteristics of the light emitted by the structure will be determined by the size of the wavelength conversion layer 4, the size of the overall structure, the reflectivity of the upper surface 100 or The color of the light emitted by the light emitting device is affected.

6A to 6F are schematic diagrams of the light emitting device in the embodiment of the present invention. The particles 3 are incorporated into the wavelength conversion layer 4 of the light emitting devices 2000A, 2000B and 2000E, into the transparent layer 6 of the light emitting devices 2000C and 2000F, and also incorporated into the transparent cover 8 of the light emitting device 2000D. Particles 3 are used to enhance the scattering or reflection of light. The particles 3 are not transparent and absorb at least part of the light emitted by the LEDs. With the addition of particles 3, the spatial chromaticity uniformity of the light emitting devices 2000A-2000F can be improved, but the light extraction efficiency is also reduced by 35%, 5%, 31%, 54%, 4% and 43%, respectively.

As shown in FIGS. 3A-3E , the light extraction efficiency is not significantly affected by the reflectivity of the sidewall surface, no matter whether the surface of the sidewall is a Lambertian scattering surface or a surface with 100% reflectivity. As shown in FIGS. 1A-1H , 4A-4C, 5A-5C, and 6A-6F , the light extraction efficiency is easily affected by the reflectivity of the surface of the carrier plate 10 or the size of the light emitting device. For example, the higher the reflectivity of the surface of the carrier plate 10 , the light extraction efficiency can be increased by about 18%-20%. Alternatively, disposing a reflective layer between the light emitting device and the carrier 10 can also increase the light extraction efficiency by about 11-12%. Furthermore, among light emitting devices with similar chromaticity spatial uniformity, the light extraction efficiency can also be improved by increasing the size of the light emitting device. For example, when the size of the light-emitting device is 25 times or more that of the light-emitting diode, the light extraction efficiency can be increased from 127lm/W to 138/W, that is, the light extraction efficiency is increased by about 8%.

In addition, the HWR or the particles 3 in the structure can also affect the uniformity of the light emitted by the light emitting device. For example, when the HWR is between 1.1 and 1.3, the chromaticity space uniformity Δu'v' at each angle is lower than 0.04. For another example, when the concentration of particles 3 in the structure is about 5%, the chromaticity space uniformity Δu'v' between -80°～+80° is lower than 0.01.

7A to 7F show schematic diagrams of light-emitting components and some related optical characteristics in an embodiment of the present invention. The broken lines with arrows in FIG. 7A , FIG. 7C and FIG. 7E represent the path of light in the light-emitting components, and FIG. 7B , FIG. 7D and FIG. 7F show the light field images of the light-emitting patterns of these light-emitting components.

The light-emitting assembly in FIG. 7A has a light-emitting device 3000 formed on a substrate 10, a first lens 160 covering the light-emitting device 3000, a second lens 162 on the first lens 160, and A wavelength conversion layer 4 located on the second lens 162 . The light emitted from the light emitting device 3000 is first redirected by the first lens 160 and then enters the second lens 162 . The light coming from the first lens 160 is then redirected by the second lens 162 and travels in a direction substantially perpendicular to the carrier 10 . As shown in FIG. 7B , the inner area of the light emitting pattern has higher brightness, and the inner area roughly corresponds to the size and shape of the first lens 160 . The area ratio of the inner area to the entire light field roughly corresponds to the front projection area ratio of the first lens 160 and the second lens 162 .

Specifically, as shown in FIG. 7A , the lens 162 has an upper surface connected to the wavelength conversion layer 4 , a lower surface, a plurality of sidewalls and a cavity for accommodating the first lens 160 and the light emitting device 3000 . The recess has a convex surface protruding toward the direction of the light emitting device 3000 and has a width approximately equal to that of the lens 160 . The plurality of side walls approach each other inwardly from the upper surface to the lower surface. In other words, the upper surface is larger/wider than the lower surface when viewed in section/top view. The side walls can be flat, curved, or a combination of flat and curved. In one embodiment, the upper surface or the lower surface may be circular, elliptical, rectangular, triangular, or other geometric shapes. Furthermore, the upper and lower surfaces may have the same or different shapes. When the angles of the light rays emitted by the light emitting device 3000 are different, the light rays may be reflected or scattered by the side walls or convex surfaces. As shown in the figure, the convex surface can gather more light toward the central region of the upper surface of the lens 162 (or make the light advance in a collimated manner) than the surrounding region of the upper surface of the lens 162 , as shown in FIG. 7B .

As shown in FIG. 7C , most of the light emitted from the light emitting device 3000 is scattered by the first lens 160 , then redirected to the edge or periphery of the third lens 164 and reflected by the third lens 164 . Therefore, as shown in FIG. 7D, the edge or periphery of the light emitting pattern will be brighter than the inner area.

In detail, as shown in FIG. 7C , the lens 164 has an upper surface connected to the wavelength conversion layer 4 , a lower surface, a plurality of sidewalls and a hole for accommodating the lens 160 and the light emitting device 3000 . The cross-section of the cavity is triangular with sloped edges. The lower width of the aperture is greater than the maximum width of the lens 160 . In several embodiments, the sloped edges (or surfaces) can scatter more light to the surrounding area of the upper surface of the lens 164 than to the middle area of the upper surface of the lens 164, as shown in FIG. 7D.

As shown in FIG. 7E , the fourth lens 166 has a structure similar to that of the second lens 162 . In detail, as shown in FIG. 7E , the lens 166 has a flat upper surface connected to the wavelength conversion layer 4 , a lower surface, a plurality of side surfaces and a hole for accommodating the lens 160 and the light emitting device 3000 . The cavity has a convex surface with a lesser curvature than the convex surface of the cavity of 162 . The light emitted from the light emitting device 3000 is firstly bent by the lens 160 and then moves outwardly in the lens 166 to the lens 166 . Compared to the structure shown in FIG. 7A , the light is scattered by the lens 160 (especially the convex surface), instead of moving in a collimated manner perpendicular to the carrier 10 as shown in FIG. 7A . In addition, the light emitted by the light emitting device 3000 is also reflected by the sidewall of the lens 166 . Compared with the optical pattern shown in FIG. 7B , the light emitting pattern shown in FIG. 7F has better uniformity in light intensity distribution.

FIG. 7G shows the forward light L1 and the back light L2 emitted from the wavelength conversion layer 4 in the light-emitting component. The light L1 and the light L2 may have different optical characteristics in different light-emitting components, and the following table shows the characteristic differences between the light L1 and the light L2 of the light-emitting components in FIG. 7A , FIG. 7C , and FIG. 7E . For example, in the light-emitting component of FIG. 7A , the color temperature difference between the forward light L1 and the back light L2 is less than 1000K, and the light extraction efficiency difference between the forward light L1 and the back light L2 is greater than 10lm/W.

The wavelength conversion layer 4 in FIG. 7A has a phosphor concentration of 30% and a thickness of 0.5mm, while the wavelength conversion layer 4 in FIG. 7E has a phosphor concentration of 50% and a thickness of 0.25mm. The thickness of the wavelength converting layer 4 in FIG. 7C is 0.45 mm, and the phosphor concentration in the outer region is 30%, and that in the inner region is 10%, as shown in FIG. 7H . In one embodiment, the included angle between the light emitted from the light emitting device and the wavelength conversion layer hardly affects the optical characteristics of the light emitted from the light emitting component. Referring to FIG. 7I to FIG. 7J , the angles between the three incident light rays and the wavelength conversion layer are 45°, 60° and 90° respectively, as shown in FIG. 7I . On the other side of the wavelength conversion layer relative to one of the three light rays, the measured light intensities corresponding to the three light rays are almost the same, as shown in FIG. 7J .

FIG. 8A shows a schematic diagram of a light emitting component 1008A. The light emitting element 1008A has a stacked layer consisting of a first wavelength conversion layer 40 , a second wavelength conversion layer 42 and a transparent layer 60 formed between the wavelength conversion layers 40 and 42 . The optical characteristics of the light emitted by the light-emitting component 1008A in FIG. 8A will be affected by certain characteristics of the stack, such as the thicknesses of the first wavelength conversion layer 40 and the second wavelength conversion layer 42 and the thickness of the first wavelength conversion layer 40. The weight percent concentration (wt%) of the second wavelength conversion layer 42 is a parameter that may affect the light extraction efficiency of the light emitting component 1008A. Light is more easily absorbed by the wavelength conversion layer with a higher weight percent concentration, so the light extraction efficiency also decreases when more light is absorbed by the wavelength conversion layer. When the thickness of the wavelength conversion layer is thicker, it means that the light has to travel a longer distance in the wavelength conversion layer. Therefore, the light is more likely to be absorbed to reduce the light extraction efficiency. In another embodiment, referring to FIG. 8B, the stack is designed so that the light will go back and forth between the first wavelength conversion layer 40 and the second wavelength conversion layer 42 before passing through the second wavelength conversion layer 42. reflection. In one embodiment, referring to the following table, the concentration of the first wavelength conversion layer 40 is 70%, the concentration of the second wavelength conversion layer 40 is 5%, and the thicknesses of the first wavelength conversion layer 40 and the second wavelength conversion layer 42 are both It is 0.3mm. The standard deviation of the color temperature (CCT) of the forward light L1 and the back light L2 is 2720.383 in the light emitting assembly 1007A of FIG. 7A , but is 1258.146 in the light emitting assembly 1008A of FIG. 8A . The total light extraction efficiency (about 138.256lm/W) of the light emitting element 1007A in FIG. 7A is similar to the total light extraction efficiency (about 137.087lm/W) of the light emitting element 1008A in FIG. 8A. By using a structure with two wavelength conversion layers, the module 1008A in FIG. 8A can maintain similar light extraction efficiency and provide a preferred color temperature (CCT) standard deviation in the forward and rear directions. In one embodiment, the phosphor concentration of the first wavelength conversion layer 40 has an effect on the color temperature (CCT) of the forward light L1, compared to the effect of the phosphor concentration of the second wavelength conversion layer 42 on the color temperature (CCT) of the back light L2. Great impact.

8C-8D show a light emitting assembly according to an embodiment of the present invention. The light-emitting assembly 1008C in FIG. 8C has two light-emitting devices 3000 respectively disposed on two substrates 10 and can emit light toward the left and right. The left and right sides of the wavelength conversion layer 44 located between the lenses 170a and 170b can be used to absorb and convert light from the two light emitting devices 3000 . Both light sources emit the same color light, such as infrared light, red light, green light, blue light and ultraviolet light. In one embodiment, the color temperature of the light emitting element 1008C can be reduced to 6500K when the concentration of the wavelength conversion particles in the wavelength conversion layer 44 increases. However, when the concentration of the wavelength conversion material in the wavelength conversion layer 44 increases to 30% or more, the color temperature will remain unchanged at about 6500K. Similarly, when the concentration of wavelength conversion particles in the wavelength conversion layer 44 increases, the luminous efficiency also increases. The light extraction efficiency can be increased to about 290lm/W. However, the light extraction efficiency will be maintained at about 290 lm/W when the concentration of the wavelength converting material in the wavelength converting layer 44 is increased to 30% or more.

The device 1008D in FIG. 8D has a light emitting device 3000 on the substrate 10 , two wavelength conversion layers 46 and 48 , and a lens 172 covering the light emitting device 3000 and the wavelength conversion layers 46 and 48 . Referring to FIG. 8D , the rays L1 and L3 are redirected and incident on the front side of the wavelength conversion layers 46 and 48, and the rays L2 and L4 are redirected and incident on the back side of the wavelength conversion layers 46 and 48. . In one embodiment, the wavelength conversion layers 46 and 48 are both 0.55 mm thick.

The optical properties of the light-emitting components are listed in the table below, and the lenses 172 are symmetrical about a central axis or a central plane (not shown), so that a symmetrical light path can be provided. In other words, the light rays L1 and L3 are mirror images of each other, and the light rays L2 and L4 are also mirror images of each other. The standard deviation of color temperature between light L1 and light L2 or between light L3 and light L4 is less than 600K, which is also lower than the standard deviation of the optical assembly in FIG. 7A . The light extraction efficiency is greater than 150lm/W, which is higher than the light extraction efficiency of the optical component in FIG. 7A .

9A-9D show schematic diagrams of a plurality of light-emitting components according to an embodiment of the present invention. Referring to FIG. 9A , lens 174A is optically coupled to wavelength conversion layer 50 . Light can enter from one side of the lens and exit from the other. When the incident angle of the light can be properly controlled and total reflection occurs between the upper surface and the lower surface inside the lens 174, the light can be reflected back and forth in the lens 174, and the light can hit the wavelength conversion layer from different positions 50 and was absorbed. The more light is absorbed, the more converted light can be generated by the wavelength conversion layer 50 .

The light emitting component 1009B in FIG. 9B has a light emitting device 4000 disposed on the carrier 10 , a lens 174 having a hole 1740 , and a wavelength conversion layer 50 disposed on the lens 174 . The light emitting device 4000 is disposed in the cavity 1740 and is completely covered by the lens 174 . TU 9C shows the light emission diagram of the front side of the lens 174, and FIG. 9D shows the light emission diagram of the back side of the lens 174. The optical characteristics of the light-emitting component 1009B are listed below, wherein the standard deviation of the color temperatures of the light rays L1 and L2 is lower than 200K, and the overall light extraction efficiency is about 140lm/W.

10A-10D are schematic diagrams of a light-emitting component according to an embodiment of the present invention. Referring to FIGS. 10A-10B , light rays are reflected back and forth within the lens 176 . The lens 176 has a first wing 1760 and a second wing 1762 . There is an inclination angle θ1 between the first wing portion 1760 and the carrier board 10 . There is an inclination angle θ2 between the second wing portion 1762 and the carrier board 10 . In one embodiment, the inclination angle θ1 and the inclination angle θ2 are both 30°. As shown in FIG. 10A , light L1 is reflected twice or multiple times in the second wing portion 1762 before passing through the wavelength conversion layer 52, and light L2 is reflected twice or multiple times in the second wing portion 1762 and then goes away from the wavelength. The direction of the conversion layer 52 is shifted and does not pass through the wavelength conversion layer 52 . The wavelength conversion layer 52 is not only located on the surfaces S1 and S2 between the first wing 1760 and the second wing 1762 , but also on the edge E2 of the first wing 1760 and the edge E1 of the second wing 1762 . As shown in FIG. 10B , the first wing 1760 and the second wing 1762 are branched on the light emitting device 5000 in a V-shape/U-shape, and the light rays L1 and L3 move along similar paths in the figure. By using the lenses in FIGS. 10A-10B , the wavelengths of the light rays L1-L3 are more easily converted by the wavelength conversion layer 52 . The light emitting component in FIG. 10B has a light emitting device 5000 on the carrier 10 , a lens 176 with a first wing 1760 and a second wing 1762 , and a wavelength conversion layer 52 . FIG. 10C shows a view of the forward side relative to lens 176 , and a view of the back side relative to lens 176 is shown in FIG. 10D . The optical characteristics of the components are listed below. The standard deviation of the color temperature of light L1 and L2 is lower than 700K, and the total light extraction efficiency is greater than 150lm/W.

Referring to FIG. 11A , the assembly has a plurality of light emitting devices 6000 (five light emitting devices 6000 are shown in the figure, but the number of light emitting devices can be more or less), a diffusion layer 18 with a distance from the light emitting devices 6000, a diffusion layer 18 located at a distance from the light emitting devices 6000, The prism layer 20 on the layer 18, and a liquid crystal display (LCD) module 22 on the prism layer 20, the light emitting device 6000, the diffusion layer 18 and the prism layer 20 can form a backlight module of a liquid crystal display, the liquid crystal display The (LCD) module 22 has a lens. The diffusion layer 18 can redistribute the light from the light emitting device 6000 to increase the light uniformity of the light emitting device 6000, while the prism layer 20 has a plurality of prisms to concentrate the light. Therefore, the uniformity of the light field on the LCD module 22 is also increased. In one embodiment, the distance between the lens in the liquid crystal display (LCD) module 22 and the light emitting device 6000 is greater than the distance between two adjacent light emitting devices.

Figure 11B shows a schematic diagram of the assembly. The symbol H represents the distance between the light-emitting device 6000 and the LCD module 22 , the symbol R represents the radius of the light-emitting area on the LCD module 22 , and the symbol d represents the lateral distance between adjacent light-emitting devices. A smaller H also means a smaller light field on the LCD module 22 , that is, a smaller radius R. In one embodiment, the light field radius of the light emitting devices 6000 on the liquid crystal display (LCD) module 22 (or the lens in the module) is equal to twice the distance between two light emitting devices 6000 . FIG. 11C to FIG. 11D show schematic top views of the arrangement of light emitting devices 6000 . The light emitting devices 6000 are arranged in a triangle connected to each other in FIG. 11C , while the light emitting devices 6000 are arranged in a square connected to each other in FIG. 11D . Light emitting devices are arranged in different shapes, which can provide different optical distributions. The illuminance distribution diagram provided per unit area of the arrangement in FIG. 11C is shown in FIG. 11E , and the illuminance distribution diagram provided per unit area of the arrangement in FIG. 11D is shown in FIG. 11F . In an embodiment, the radius R of the light field of a single light emitting device 6000 may be set to be the same as the shortest distance between adjacent light emitting devices 6000 . As shown in FIG. 11E and FIG. 11F , different colors represent different levels of illumination, and for a detailed comparison between colors and levels of illumination, please refer to the legends in the figures.

In this embodiment, FIG. 11G is a schematic diagram of a change in optical uniformity caused by a displacement of a light emitting device 6000 in the X direction, and FIG. 11H is a schematic diagram of a change in optical uniformity caused by a displacement of a light emitting device 6000 in the Y direction. . The abscissa in FIG. 11G or FIG. 11H represents the offset distance of a light-emitting device 6000 in the light-emitting assembly relative to the original position, and the ordinate in FIG. 11G or FIG. 11H represents the normalized distance of the light-emitting assembly. Illumination uniformity. As shown in Figure 11G and Figure 11H, the positive (X>0 or Y>0) and negative (X<0 or Y<0) displacements in the square arrangement have similar effects on the uniformity of illumination. of reduction. However, in the triangular arrangement, positive (X>0 or Y>0) and negative (X<0 or Y<0) displacements have different effects on the uniformity of the illuminance. For the triangular arrangement, the reduction of illuminance uniformity caused by the negative displacement is more than that caused by the positive displacement. Regardless of whether it is in a triangular arrangement or a square arrangement, when the position of the light-emitting device is displaced by 0.1mm in the X direction or Y direction (towards the positive or negative direction), the optical uniformity will drop below the maximum value of 0.9 times.

12A-12B show a measuring device according to an embodiment of the present invention. The device in FIG. 12A can measure the far-field optical characteristics of the light emitted by the light emitting device 7000. The light emitted from the light emitting device 7000 can be received by the spectrometer 24 after passing through the first aperture 178a and the second aperture 178b. The first aperture 178 a and the second aperture 178 b remove part of the light and keep the light at a specific angle for absorption by the spectrometer 24 . The device in FIG. 12B can measure the field optical properties of the light emitted by the light emitting device 7000 , and the light emitted from the light emitting device 7000 can be received by the spectrometer 24 after passing through the convex lens 180 .

Figures 12C to 12E show part of the measurement results obtained by using the device in Figure 12A, wherein 0 degrees in Figures 12C to 12E roughly corresponds to the center of the light emitting device 7000, and the angle represents the measurement point and the light emitting device 7000 center angle. FIG. 12C shows the normalized light intensity of the blue light, the light intensity of the yellow light, and the overall light intensity respectively. All light can have blue light, yellow light or other colored light. As shown in the figure, different light rays have different intensities at different angles. FIG. 12D shows the ratio YBR of the light intensity of the yellow light to the light intensity of the blue light, and this ratio increases as the absolute value of the angle increases. In particular, yellow light is easier to observe at larger angles, and this also causes the luminous pattern to have a yellowish area around the pattern. Referring to FIG. 12E , the correlated color temperature CCT decreases from more than 6500K (near the center of the light-emitting device) at 0 degrees to about 4500K (near the periphery of the light-emitting device) at 90 degrees.

As shown in FIG. 13 , a lens 184 can be attached to the light emitting device 8000 to even out the illuminance and color of the emitted light. Lens 184 can divert blue light into a higher angle direction and yellow light into a smaller angle direction. The lens 184 has a main body and a hole 1840 on the lower surface of the main body. The hole 1840 defines a space for accommodating the light emitting device 8000 . The cross-sectional view of cavity 1840 has an upper inner surface and a lower inner surface. The upper inner surface has a bell/arched shape/profile. The lower inner surface has a trail extending to the lower surface of lens 184 . The upper and lower inner surfaces may have the same or different curvatures. Additionally, either the upper inner surface itself or the lower inner surface itself may have one or more curvatures. The outer surface of the lens 184 has several connected regions (as shown in FIG. 13 , these regions can be regarded as line segments in the cross-sectional view), and the connecting parts of adjacent regions can have detectable angle changes to guide specific color light to a specific direction. For example, colored light with a shorter wavelength, such as blue light, can be bent downward when it hits a higher region; while colored light with a longer wavelength, such as yellow light, can be bent upward when it hits a lower region. bent.

The present invention also claims the priority of U.S. Provisional Application No. 62/029977 and U.S. Formal Application No. 14/810180, wherein the Chinese papers and related files contained in U.S. Provisional Application No. 62/029977 are cited as the present application part of the case.

It should be understood that the above-mentioned embodiments in the present invention can be combined or replaced with each other under appropriate circumstances, and are not limited to the specific embodiments described. The various embodiments listed in the present invention are only used to illustrate the present invention, and are not intended to limit the scope of the present invention. Any obvious modification or change made by anyone to the present invention will not depart from the spirit and scope of the present invention.

Claims (10)

1. A light-emitting component, comprising: A light emitting device comprising a first upper surface and a first side surface; and The outermost wavelength conversion layer covers the first upper surface and has a second upper surface and a second side surface, Wherein, the ratio of the distance between the first upper surface and the second upper surface to the distance between the first side surface and the second side surface is between 1.1 and 1.3. 2. The light emitting device as claimed in claim 1, further comprising a transparent layer formed between the light emitting device and the wavelength conversion layer. 3. The lighting assembly of claim 1, further comprising a carrier plate having a third upper surface connected to a lower surface opposite to the first upper surface, wherein the third upper surface is a Lambertian scattering surface. 4. The light-emitting component as claimed in claim 1, further comprising a lens disposed on the light-emitting device, wherein the lens comprises a first wing and a second wing. 5. The light emitting component as claimed in claim 1, further comprising a transparent cover disposed on the wavelength conversion layer. 6. The light-emitting component as claimed in claim 5, wherein the transparent cover further comprises opaque particles. 7. The light-emitting component as claimed in claim 1, wherein the wavelength converting layer further comprises opaque particles. 8. The light-emitting component as claimed in claim 2, wherein the transparent layer further comprises opaque particles. 9. The light emitting component as claimed in claim 1, wherein the first upper surface is parallel to the second upper surface. 10. The light emitting component as claimed in claim 1, wherein the first side surface is parallel to the second side surface.

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