CN105316637A - Cavity protecting device of magnetic control direct current sputtering system - Google Patents
Cavity protecting device of magnetic control direct current sputtering system Download PDFInfo
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- CN105316637A CN105316637A CN201510806326.8A CN201510806326A CN105316637A CN 105316637 A CN105316637 A CN 105316637A CN 201510806326 A CN201510806326 A CN 201510806326A CN 105316637 A CN105316637 A CN 105316637A
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- China
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- cavity
- magnetic control
- sputtering system
- reaction cavity
- direct current
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Abstract
The invention discloses a cavity protecting device of a magnetic control direct current sputtering system. The cavity protecting device of the magnetic control direct current sputtering system comprises a reaction cavity, a water discharging opening is formed in the reaction cavity, and a decompression valve is disposed in the position corresponding to the water discharging opening. By means of the cavity protecting device of the magnetic control direct current sputtering system in the technical scheme, water vapor in the reaction cavity can be discharged through the decompression valve when the pressure in the reaction cavity is excessively high, so that damage to the reaction cavity due to the continuous high-pressure state is avoided.
Description
Technical field
The present invention relates to a kind of semiconductor processing equipment, especially a kind of cavity protector of magnetic control d.c. sputtering system.
Background technology
In conventional solution, the water port that the reaction cavity in magnetic control d.c. sputtering system is only arranged, it need manually operate on it; But in reaction cavity internal part working process, it often causes reaction cavity internal pressure excessive, if water port fails to open in time, then the damage of reaction cavity can be caused.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of cavity protector of magnetic control d.c. sputtering system, and it can carry out effective pressure protect to reaction cavity.
For solving the problems of the technologies described above, the present invention relates to a kind of cavity protector of magnetic control d.c. sputtering system, it includes reaction cavity, is provided with water port on described reaction cavity, and the correspondence position of water port is provided with pressure release valve.
As a modification of the present invention, be connected with many relief pipelines on described pressure release valve, each root relief pipeline is all communicated to the returnable being arranged on reaction cavity outside.Adopt above-mentioned design, it can avoid the water vapour of being discharged by pressure release valve directly to contact with remaining part in magnetic control d.c. sputtering system, thus causes the damage of associated components.
As a modification of the present invention, described pressure release valve is connected with at least three relief pipelines, three relief pipelines be all communicated to be arranged on reaction cavity outside pressure-releasing chamber among, be provided with the Drainage pipe being communicated to returnable on described pressure-releasing chamber.Adopt above-mentioned design, it effectively can guarantee the stability of water vapour discharge process.
As a modification of the present invention, in pressure-releasing chamber, the equal correspondence of each root relief pipeline is provided with a magnetic valve and controls it, and it can realize relief pipeline and open successively according to the requirement of pressure release speed, to avoid the phenomenon generation occurring that pressure release is too fast or excessively slow.
Adopt the cavity protector of magnetic control d.c. sputtering system of technique scheme, its by pressure release valve to make reaction cavity internal pressure excessive time, the water vapour of its inside can be discharged, and is damaged to avoid reaction cavity continuous high-pressure state.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present invention;
Reference numerals list:
1-reaction cavity, 2-water port, 3-pressure release valve, 4-relief pipeline, 5-returnable, 6-pressure-releasing chamber, 7-Drainage pipe.
Embodiment
Below in conjunction with embodiment, illustrate the present invention further, following embodiment should be understood and be only not used in for illustration of the present invention and limit the scope of the invention.It should be noted that, the word "front", "rear" of use is described below, "left", "right", "up" and "down" refer to direction in accompanying drawing, word " interior " and " outward " refer to the direction towards or away from particular elements geometric centre respectively.
Embodiment 1
The cavity protector of a kind of magnetic control d.c. sputtering system as shown in Figure 1, it includes reaction cavity 1, is provided with water port 2 on described reaction cavity 1, and the correspondence position of water port 2 is provided with pressure release valve 3.
As a modification of the present invention, be connected with many relief pipelines 4 on described pressure release valve 3, each root relief pipeline 4 is all communicated to the returnable 5 being arranged on reaction cavity 1 outside.Adopt above-mentioned design, it can avoid the water vapour of being discharged by pressure release valve directly to contact with remaining part in magnetic control d.c. sputtering system, thus causes the damage of associated components.
Adopt the cavity protector of magnetic control d.c. sputtering system of technique scheme, its by pressure release valve to make reaction cavity internal pressure excessive time, the water vapour of its inside can be discharged, and is damaged to avoid reaction cavity continuous high-pressure state.
Embodiment 2
As a modification of the present invention, described pressure release valve 3 be connected with three relief pipelines, 4, three relief pipelines 4 be all communicated to be arranged on reaction cavity 1 outside pressure-releasing chamber 6 among, be provided with the Drainage pipe 7 being communicated to returnable 5 on described pressure-releasing chamber 6.Adopt above-mentioned design, it effectively can guarantee the stability of water vapour discharge process.
As a modification of the present invention, in pressure-releasing chamber 6, the equal correspondence of each root relief pipeline 4 is provided with a magnetic valve and controls it, and it can realize relief pipeline and open successively according to the requirement of pressure release speed, to avoid the phenomenon generation occurring that pressure release is too fast or excessively slow.
All the other feature & benefits of the present embodiment are all identical with embodiment 1.
Claims (4)
1. a cavity protector for magnetic control d.c. sputtering system, it includes reaction cavity, it is characterized in that, is provided with water port on described reaction cavity, and the correspondence position of water port is provided with pressure release valve.
2. according to the cavity protector of magnetic control d.c. sputtering system according to claim 1, it is characterized in that, be connected with many relief pipelines on described pressure release valve, each root relief pipeline is all communicated to the returnable being arranged on reaction cavity outside.
3. according to the cavity protector of magnetic control d.c. sputtering system according to claim 2; it is characterized in that; described pressure release valve is connected with at least three relief pipelines; three relief pipelines be all communicated to be arranged on reaction cavity outside pressure-releasing chamber among, be provided with the Drainage pipe being communicated to returnable on described pressure-releasing chamber.
4. according to the cavity protector of magnetic control d.c. sputtering system according to claim 3, it is characterized in that, in pressure-releasing chamber, the equal correspondence of each root relief pipeline is provided with a magnetic valve and controls it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510806326.8A CN105316637A (en) | 2015-11-20 | 2015-11-20 | Cavity protecting device of magnetic control direct current sputtering system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510806326.8A CN105316637A (en) | 2015-11-20 | 2015-11-20 | Cavity protecting device of magnetic control direct current sputtering system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105316637A true CN105316637A (en) | 2016-02-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510806326.8A Pending CN105316637A (en) | 2015-11-20 | 2015-11-20 | Cavity protecting device of magnetic control direct current sputtering system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105316637A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108239762A (en) * | 2018-04-14 | 2018-07-03 | 苏州赛森电子科技有限公司 | Degassing device in magnetic control direct current sputtering system |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5006213A (en) * | 1989-06-12 | 1991-04-09 | Leybold Aktiengesellschaft | Process for coating a substrate with electrically conductive materials |
| JP2004158714A (en) * | 2002-11-07 | 2004-06-03 | Fujitsu Ltd | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| CN202047130U (en) * | 2011-03-09 | 2011-11-23 | 上海子创镀膜技术有限公司 | Novel integrated device capable of supplying gas through multistage technology |
| CN102825894A (en) * | 2012-09-20 | 2012-12-19 | 天津英利新能源有限公司 | Laminating method of photovoltaic assembly and laminating machine |
| CN102956743A (en) * | 2011-08-26 | 2013-03-06 | 洛阳尚德太阳能电力有限公司 | Gas filling method for vacuum equipment door opening process and control device for gas filling process |
| CN205188429U (en) * | 2015-11-20 | 2016-04-27 | 苏州赛森电子科技有限公司 | Cavity protection device of magnetic control direct current sputtering system |
-
2015
- 2015-11-20 CN CN201510806326.8A patent/CN105316637A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5006213A (en) * | 1989-06-12 | 1991-04-09 | Leybold Aktiengesellschaft | Process for coating a substrate with electrically conductive materials |
| JP2004158714A (en) * | 2002-11-07 | 2004-06-03 | Fujitsu Ltd | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| CN202047130U (en) * | 2011-03-09 | 2011-11-23 | 上海子创镀膜技术有限公司 | Novel integrated device capable of supplying gas through multistage technology |
| CN102956743A (en) * | 2011-08-26 | 2013-03-06 | 洛阳尚德太阳能电力有限公司 | Gas filling method for vacuum equipment door opening process and control device for gas filling process |
| CN102825894A (en) * | 2012-09-20 | 2012-12-19 | 天津英利新能源有限公司 | Laminating method of photovoltaic assembly and laminating machine |
| CN205188429U (en) * | 2015-11-20 | 2016-04-27 | 苏州赛森电子科技有限公司 | Cavity protection device of magnetic control direct current sputtering system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108239762A (en) * | 2018-04-14 | 2018-07-03 | 苏州赛森电子科技有限公司 | Degassing device in magnetic control direct current sputtering system |
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Application publication date: 20160210 |
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| RJ01 | Rejection of invention patent application after publication |