CN105305788A - Wide-duty-ratio MOSFET isolation drive circuit - Google Patents
Wide-duty-ratio MOSFET isolation drive circuit Download PDFInfo
- Publication number
- CN105305788A CN105305788A CN201510819115.8A CN201510819115A CN105305788A CN 105305788 A CN105305788 A CN 105305788A CN 201510819115 A CN201510819115 A CN 201510819115A CN 105305788 A CN105305788 A CN 105305788A
- Authority
- CN
- China
- Prior art keywords
- circuit
- drive circuit
- output
- edge
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electronic Switches (AREA)
Abstract
To solve the problems of the prior art, the invention provides a wide-duty-ratio MOSFET isolation drive circuit. A rising edge and a falling edge of a PWM signal are captured and then an edge pulse signal is formed, the edge pulse signal is input to a primary side of a transformer, an output pulse is shaped at a secondary side of the transformer and finally recovered to be a PWM drive waveform with positive and negative voltage output, and then an MOSFET can be driven. Signals and energy are instantly transmitted at the edge of PWM, so the MOSFET isolation drive circuit is wide in isolation output wide duty ratio, which can reach 0-99.5%. A primary side pulse generation mode is different from a conventional capacitor-transformer combination driving mode, so a self-excitation frequency problem does not exist. If an input duty ratio abruptly changes, the output can follow with the change. No low-level gain phenomenon will occur, and a switch tube will not be connected for short time and burn out.
Description
Technical field
The present invention relates to a kind of MOSFET isolated drive circuit, particularly relate to a kind of MOSFET isolated drive circuit of wide duty ratio.
Background technology
MOSFET isolated drive circuit is widely in applied power source system, the performance quality of isolation drive directly affects the quality of power supply output, for the isolated drive circuit of MOSFET, at present, the mode having light-coupled isolation and the isolation of magnetic coupling of main employing, because optocoupler can only realize the transmission of signal, need to increase an auxiliary source circuit at isolation secondary, isolated drive circuit is comparatively complicated, and traditional magnetic coupling isolation drive is when duty ratio is suddenlyd change, there is low level to raise up problem, thus cause MOSFET false triggering, have a strong impact on the performance index of power supply, power MOSFET is even caused to burn, along with the development of power technology, the input range of Switching Power Supply, the raising of load capacity, when load switching or input voltage saltus step, duty ratio there will be transition, tradition magnetic coupling isolation drive is by cisco unity malfunction, therefore, a kind of reliable isolated drive circuit of exploitation is very necessary.
Summary of the invention
In order to solve the problems of the prior art, the present invention proposes a kind of MOSFET isolated drive circuit of wide duty ratio, its objective is the reliability improving isolation drive, and when duty ratio is suddenlyd change, the low level of isolation and amplifier is without the phenomenon that raises up.
The present invention is achieved through the following technical solutions:
A MOSFET isolated drive circuit for wide duty ratio, comprises the first edge capture circuit, Second Edge along capture circuit, the first drive circuit, the second drive circuit, transformer and PWM secondary output circuit; Pwm signal connects the first edge capture circuit via the 3rd not gate, and the first edge capture circuit connects drive circuit, the one end on the former limit of output connection transformer of the first drive circuit; Described pwm signal connects Second Edge along capture circuit, and Second Edge connects drive circuit along capture circuit, the other end on the former limit of output connection transformer of the second drive circuit; The signal captured forms the pulse signal driving transformer of band power after described drive circuit, to realize while signal, driving-energy being transferred to described secondary output circuit in transmission pulse; The output of described secondary output circuit is the pwm signal after reduction, manages for driven MOS FET.
As a further improvement on the present invention, described edge capture circuit is RC differential circuit, and the input of differential circuit connects one end of electric capacity C, and the output of differential circuit connects the other end of electric capacity C, the output of a termination differential circuit of resistance R, the other end ground connection of resistance R.
As a further improvement on the present invention, the secondary of described transformer is N number of PWM secondary output circuit, can export N road MOSFET drive singal simultaneously, realize the isolation drive of N number of MOSFET.
As a further improvement on the present invention, described MOSFET isolated drive circuit also comprises pulsewidth and expands circuit, and described pulsewidth is expanded circuit and comprised the first not gate, the first diode D
1, the second not gate, resistance R
1, electric capacity C
1; Wherein, PMW signal is via the first not gate and the first diode D
1negative pole be connected, the first diode D
1positive pole be connected with the second not gate U1B, the output of the second not gate is the output that pulsewidth expands circuit; Resistance R
1one end connect voltage V
cC, R
1the other end and the first diode D
1positive pole be connected; Electric capacity C
1one end ground connection, C
1the other end and the first diode D
1positive pole be connected.
As a further improvement on the present invention, described secondary output circuit comprises the first switching tube Q
1, second switch pipe Q
2; Q
1source electrode connect one end of transformer secondary, Q
1grid connect the other end of transformer secondary, Q
1drain electrode meet Q
2grid, Q
2source electrode meet Q
1grid, Q
1drain electrode and Q
2drain electrode as the output of secondary output circuit.
As a further improvement on the present invention, between capture circuit, the 3rd not gate is also had at described pulsewidth expansion circuit and Second Edge.
As a further improvement on the present invention, described MOSFET opens at the rising edge of pwm signal, and trailing edge turns off.
The invention has the beneficial effects as follows: the MOSFET isolated drive circuit of wide duty ratio of the present invention, by catching rear formation edge pulse signal respectively to the rising edge of pwm signal and trailing edge, be input to the former limit of transformer, at transformer secondary, the PWM drive waveforms of generating positive and negative voltage output is finally recovered to after shaping to the pulse exported, realizes the driving to MOSFET.Due to be when the edge of PWM moment transmission of signal and energy, the wide duty cycle range of isolation and amplifier of the present invention is wide, can reach 0 ~ 99.5%; It is different that pulses generation mode and traditional electric capacity-transformer due to former limit combine type of drive, there is not free-running frequence problem, when input duty cycle suddenlys change, output can correctly be followed, to raise up phenomenon without low level, switching tube can not be caused to lead directly in short-term, burn.
Accompanying drawing explanation
Fig. 1 is the system construction drawing of MOSFET isolated drive circuit of the present invention;
Fig. 2 is the circuit diagram of the first embodiment of the present invention;
Fig. 3 is the circuit diagram of the second embodiment of the present invention;
Fig. 4 is the signal waveforms of each point in circuit of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, described isolated drive circuit is primarily of compositions such as edge capture circuit, drive circuit, transformer, PWM secondary output circuits for the system construction drawing of the MOSFET isolated drive circuit of wide duty ratio of the present invention.Wherein, it is optional that pulsewidth expands circuit, and it act as ...First edge capture circuit, the first drive circuit constitute the first branch road, and the first edge capture circuit is caught pwm signal rising edge.Second Edge constitutes the second branch road along capture circuit, the second drive circuit, and Second Edge is caught along capture circuit pwm signal trailing edge.The signal captured forms the pulse signal driving transformer of band power after driving chip, can realize while signal, driving-energy being transferred to PWM secondary output circuit in transmission pulse, because the electric capacity of the gate-to-source of the switching tube of secondary output circuit exists, the pulse of transformer secondary is recovered to pwm signal and carries out switch control rule to MOSFET after shaping, MOSFET opens at the rising edge of pwm signal, and trailing edge turns off.
Accompanying drawing 2 is first embodiments of MOSFET isolated drive circuit of the present invention, comprises pulsewidth and expands circuit, the first edge capture circuit, Second Edge along capture circuit, the first drive circuit, the second drive circuit, transformer and PWM secondary output circuit.The output of described secondary output circuit is used for driven MOS FET pipe.Pwm signal is input to pulsewidth and expands circuit, and the output that pulsewidth expands circuit obtains an inversion signal after the 3rd not gate U1C; Described inversion signal connects the first edge capture circuit via the 4th not gate U1D, and the first edge capture circuit catches the rising edge of pwm signal, and the first edge capture circuit connects drive circuit, the one end on the former limit of output connection transformer of the first drive circuit; Described inversion signal connects Second Edge along capture circuit, and Second Edge catches the trailing edge of pwm signal along capture circuit, and Second Edge connects drive circuit along capture circuit, the other end on the former limit of output connection transformer of the second drive circuit.
Wherein, described edge capture circuit is RC differential circuit, and the input of differential circuit connects one end of electric capacity C, and the output of differential circuit connects the other end of electric capacity C, the output of a termination differential circuit of resistance R, the other end ground connection of resistance R.
In actual application, there is little duty ratio failure, when duty ratio is less than certain value (as 0.4%), there will be the problem exporting permanent High level state, add the 3rd not gate U1C and can overcome this problem.
The driving chip such as the optional ICL7667 of described drive circuit.
Described pulsewidth is expanded circuit and is comprised the first not gate U1A, the first diode D
1, the second not gate U1B, resistance R
1, electric capacity C
1; Wherein, PMW signal is via the first not gate U1A and the first diode D
1negative pole be connected, the first diode D
1positive pole be connected with the second not gate U1B, the output of the second not gate U1B is the output that pulsewidth expands circuit; Resistance R
1one end connect voltage V
cC, R
1the other end and the first diode D
1positive pole be connected; Electric capacity C
1one end ground connection, C
1the other end and the first diode D
1positive pole be connected.It is the pulsewidth loss in circuit below recovered that pulsewidth expands the Main Function of circuit, and ensure that the duty ratio of input and output is constant, it only changes pulse duration, does not change the cycle.Because the pulsewidth loss of circuit is below usually also little, actual pulsewidth is expanded also only in nanosecond.
Described secondary output circuit comprises the first switching tube Q
1, second switch pipe Q
2; Q
1source electrode connect one end of transformer secondary, Q
1grid connect the other end of transformer secondary, Q
1drain electrode meet Q
2grid, Q
2source electrode meet Q
1grid, Q
1drain electrode and Q
2drain electrode as the output of secondary output circuit.Can at the drain electrode of switching tube and the indirect fly-wheel diode of source electrode, the negative pole of diode connects the drain electrode of switching tube, and the positive pole of diode connects the source electrode of switching tube.
Accompanying drawing 3 is second embodiments of MOSFET isolated drive circuit of the present invention, the circuit of transformer primary side is the same with the first embodiment, transformer secondary is N number of PWM secondary output circuit, can export N road MOSFET drive singal simultaneously, realize the isolation drive of N number of MOSFET.
As shown in Figure 4, the pulse that secondary exports finally is recovered to the PWM drive waveforms that generating positive and negative voltage exports to the voltage waveform of transformer two ends each point after shaping.
The MOSFET isolated drive circuit of wide duty ratio of the present invention, due to be when the edge of PWM moment transmission of signal and energy, the wide duty cycle range of its isolation and amplifier is wide, can reach: 0 ~ 99.5%; It is different that pulses generation mode and traditional electric capacity-transformer due to former limit combine type of drive, there is not free-running frequence problem, when input duty cycle suddenlys change, output can correctly be followed, to raise up phenomenon without low level, switching tube can not be caused to lead directly in short-term, burn.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, some simple deduction or replace can also be made, all should be considered as belonging to protection scope of the present invention.
Claims (7)
1. a MOSFET isolated drive circuit for wide duty ratio, comprises the first edge capture circuit, Second Edge along capture circuit, the first drive circuit, the second drive circuit, transformer and PWM secondary output circuit; Pwm signal connects the first edge capture circuit via the 4th not gate, and the first edge capture circuit connects drive circuit, the one end on the former limit of output connection transformer of the first drive circuit; Described pwm signal connects Second Edge along capture circuit, and Second Edge connects drive circuit along capture circuit, the other end on the former limit of output connection transformer of the second drive circuit; The signal captured forms the pulse signal driving transformer of band power after described drive circuit, to realize while signal, driving-energy being transferred to described secondary output circuit in transmission pulse; The output of described secondary output circuit is the pwm signal after reduction, manages for driven MOS FET.
2. MOSFET isolated drive circuit according to claim 1, it is characterized in that: described edge capture circuit is RC differential circuit, the input of differential circuit connects one end of electric capacity C, the output of differential circuit connects the other end of electric capacity C, the output of the one termination differential circuit of resistance R, the other end ground connection of resistance R.
3. MOSFET isolated drive circuit according to claim 1, is characterized in that: the secondary of described transformer is N number of PWM secondary output circuit, can export N road MOSFET drive singal simultaneously, realize the isolation drive of N number of MOSFET.
4. MOSFET isolated drive circuit according to claim 1, is characterized in that: described MOSFET isolated drive circuit also comprises pulsewidth and expands circuit, and described pulsewidth is expanded circuit and comprised the first not gate, the first diode D
1, the second not gate, resistance R
1, electric capacity C
1; Wherein, PMW signal is via the first not gate and the first diode D
1negative pole be connected, the first diode D
1positive pole be connected with the second not gate U1B, the output of the second not gate is the output that pulsewidth expands circuit; Resistance R
1one end connect voltage V
cC, R
1the other end and the first diode D
1positive pole be connected; Electric capacity C
1one end ground connection, C
1the other end and the first diode D
1positive pole be connected.
5. MOSFET isolated drive circuit according to claim 1, is characterized in that: described secondary output circuit comprises the first switching tube, second switch pipe; The source electrode of the first switching tube connects one end of transformer secondary, the grid of the first switching tube connects the other end of transformer secondary, the drain electrode of the first switching tube connects the grid of second switch pipe, the source electrode of second switch pipe connects the grid of the first switching tube, and the drain electrode of the first switching tube and the drain electrode of second switch pipe are as the output of secondary output circuit.
6. MOSFET isolated drive circuit according to claim 4, is characterized in that: between capture circuit, also have the 3rd not gate at described pulsewidth expansion circuit and Second Edge.
7. MOSFET isolated drive circuit according to claim 1, is characterized in that: described MOSFET opens at the rising edge of pwm signal, and trailing edge turns off.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510819115.8A CN105305788A (en) | 2015-11-20 | 2015-11-20 | Wide-duty-ratio MOSFET isolation drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510819115.8A CN105305788A (en) | 2015-11-20 | 2015-11-20 | Wide-duty-ratio MOSFET isolation drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105305788A true CN105305788A (en) | 2016-02-03 |
Family
ID=55202673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510819115.8A Pending CN105305788A (en) | 2015-11-20 | 2015-11-20 | Wide-duty-ratio MOSFET isolation drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105305788A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110311572A (en) * | 2019-07-26 | 2019-10-08 | 广州金升阳科技有限公司 | A kind of transformer isolation drive control method and its isolated drive circuit |
| CN112165240A (en) * | 2020-08-27 | 2021-01-01 | 山东航天电子技术研究所 | Nanosecond high voltage pulse switch driver circuit |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6246592B1 (en) * | 1999-08-10 | 2001-06-12 | Texas Instruments Incorporated | Unique power supply architecture with cascaded converters for large input-to-output step-down ratio |
| CN102307003A (en) * | 2011-09-14 | 2012-01-04 | 深圳航天科技创新研究院 | Insulation driving circuit of power switching tube |
| CN102315757A (en) * | 2010-07-07 | 2012-01-11 | 台达能源技术（上海）有限公司 | Driver for driving power switching element |
| CN103280948A (en) * | 2013-06-05 | 2013-09-04 | 广州金升阳科技有限公司 | Impulse modulation magnetic separation drive circuit |
| JP2015023586A (en) * | 2013-07-16 | 2015-02-02 | ニチコン株式会社 | Dc-dc power supply circuit |
| CN205283380U (en) * | 2015-11-20 | 2016-06-01 | 深圳市航天新源科技有限公司 | MOSFET isolating driver circuit of wide duty cycle |
-
2015
- 2015-11-20 CN CN201510819115.8A patent/CN105305788A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6246592B1 (en) * | 1999-08-10 | 2001-06-12 | Texas Instruments Incorporated | Unique power supply architecture with cascaded converters for large input-to-output step-down ratio |
| CN102315757A (en) * | 2010-07-07 | 2012-01-11 | 台达能源技术（上海）有限公司 | Driver for driving power switching element |
| CN102307003A (en) * | 2011-09-14 | 2012-01-04 | 深圳航天科技创新研究院 | Insulation driving circuit of power switching tube |
| CN103280948A (en) * | 2013-06-05 | 2013-09-04 | 广州金升阳科技有限公司 | Impulse modulation magnetic separation drive circuit |
| JP2015023586A (en) * | 2013-07-16 | 2015-02-02 | ニチコン株式会社 | Dc-dc power supply circuit |
| CN205283380U (en) * | 2015-11-20 | 2016-06-01 | 深圳市航天新源科技有限公司 | MOSFET isolating driver circuit of wide duty cycle |
Non-Patent Citations (1)
| Title |
|---|
| 段九州: "《振荡电路实用设计手册》", 30 August 2002, 辽宁科学技术出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110311572A (en) * | 2019-07-26 | 2019-10-08 | 广州金升阳科技有限公司 | A kind of transformer isolation drive control method and its isolated drive circuit |
| CN111654193A (en) * | 2019-07-26 | 2020-09-11 | 广州金升阳科技有限公司 | Drive control method and circuit thereof |
| CN111654193B (en) * | 2019-07-26 | 2021-10-22 | 广州金升阳科技有限公司 | Drive control method and circuit thereof |
| CN112165240A (en) * | 2020-08-27 | 2021-01-01 | 山东航天电子技术研究所 | Nanosecond high voltage pulse switch driver circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100574102C (en) | The processing method of IGBT driver and drive signal thereof | |
| CN101895281B (en) | Novel MOS tube drive circuit for switch power supply | |
| CN203406774U (en) | Large-power MOSFET negative-voltage drive circuit | |
| CN103138541A (en) | Drive transformer isolation self-adaptation drive circuit | |
| CN105429441A (en) | IGBT (Insulated Gate Bipolar Transistor) closed loop active driving circuit and driving method thereof | |
| CN103346763A (en) | Insulated gate bipolar transistor drive protective circuit | |
| CN103595238A (en) | Low-power IGBT (insulated gate bipolar transistor) driving interlocking circuit | |
| CN103166616A (en) | Simulative switch circuit structure | |
| CN103595226B (en) | Transformer isolation symmetrical complement drive circuit | |
| CN101640527A (en) | IGBT driving circuit capable of realizing signal transmission by pulse modulation demodulation system | |
| CN111293862A (en) | High-reliability self-adaptive dead time grid driving circuit | |
| CN203590014U (en) | Low-power IGBT (insulated gate bipolar transistor) driving interlocking circuit | |
| CN203933357U (en) | A kind of metal-oxide-semiconductor drive circuit for fast detecting equipment | |
| CN103326315B (en) | A kind of under-voltage protecting circuit and high voltage integrated circuit | |
| CN105305788A (en) | Wide-duty-ratio MOSFET isolation drive circuit | |
| CN202652172U (en) | Analog switch circuit structure | |
| CN205283380U (en) | MOSFET isolating driver circuit of wide duty cycle | |
| CN104716936B (en) | A kind of signal demodulation integrated circuit of anti-ESD | |
| CN101783582A (en) | Single-input dual-output pulse-width modulation signal generating circuit with adjustable dead time | |
| CN204376860U (en) | Switching circuit | |
| CN109921615A (en) | Instantaneous negative pressure switch-off power metal-oxide-semiconductor driving circuit and driving method | |
| CN202737834U (en) | Modulation drive device of MCR excitation system | |
| CN112072901A (en) | Power device driving device with high common mode transient interference resistance | |
| CN204465496U (en) | An isolated high-side driver | |
| CN105519270B (en) | A kind of pulse width signal amplifying circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160203 |