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CN105290418B - Plate the plating subsidiary formula method for the thick tin layers for attaching solderability thickness in a kind of micro-nano copper ball surface - Google Patents

Plate the plating subsidiary formula method for the thick tin layers for attaching solderability thickness in a kind of micro-nano copper ball surface Download PDF

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CN105290418B
CN105290418B CN201510664334.3A CN201510664334A CN105290418B CN 105290418 B CN105290418 B CN 105290418B CN 201510664334 A CN201510664334 A CN 201510664334A CN 105290418 B CN105290418 B CN 105290418B
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陈宏涛
胡天麒
李明雨
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Harbin Institute of Technology Shenzhen
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Abstract

The present invention provides the plating subsidiary formula methods that a kind of micro-nano copper ball surface plating attaches the thick tin layers of solderability thickness, obtain surface plating with thick tin layers based on Cu@Sn nucleocapsid metal powders.Preset suppressed using the metal powder material is carried out welding and (250 DEG C) welding of low temperature can be realized, gained solder joint is amenable to (676 DEG C) military services of high temperature, and the stability for greatly improving welding spot reliability and weld seam can be widely applied to various high-temperature soldering fields.

Description

一种微纳米铜球表面镀附具有可焊性厚度的厚锡层的镀附 方法The invention discloses a method of coating the surface of micro-nano copper balls with a thick tin layer with solderability thickness. method

技术领域technical field

本发明属于材料化学与材料加工交叉技术领域,涉及一种微纳米铜球表面镀附具有可焊性厚度的厚锡层的镀附方法。The invention belongs to the interdisciplinary technical field of material chemistry and material processing, and relates to a plating method for plating a thick tin layer with a solderable thickness on the surface of micro-nano copper balls.

背景技术Background technique

高温功率器件由于其在汽车、井下石油天然气行业、飞行器、空间探测、核反应环境以及雷达等领域的巨大潜力而越来越受到人们的关注。目前市面上的IGBT芯片普遍以硅为原材料,但是由于硅材料禁带宽度、临界击穿电场强度、电子饱和速率等各项参数均较低,目前该种材料的发展已接近瓶颈。碳化硅(SiC)比硅材料具有更好的物理性质,由SiC制成的功率器件具有关断拖尾电流小、响应速度快的特性。同时该材料制成的功率器件能够经受很高的温度,特别适合于高功率高频率以及高温环境下的应用。目前碳化硅芯片已经在一些领域投入商业化应用,并且有望完全替代硅芯片成为第三代半导体。当前正值第三代碳化硅半导体即将广泛推广应用之际,但适用于该种功率器件封装使用的能经受高温服役条件的钎料却少之又少,并且各有优缺点,因此急需开发出一种能够具有高熔点高可靠性的钎料。High temperature power devices are attracting increasing attention due to their great potential in automotive, downhole oil and gas industry, aircraft, space exploration, nuclear reaction environment, and radar. At present, the IGBT chips on the market generally use silicon as the raw material. However, due to the low parameters such as the bandgap width of the silicon material, the critical breakdown electric field strength, and the electron saturation rate, the development of this material is currently approaching the bottleneck. Silicon carbide (SiC) has better physical properties than silicon materials, and power devices made of SiC have the characteristics of small off-tail current and fast response. At the same time, power devices made of this material can withstand very high temperatures, and are especially suitable for applications in high-power, high-frequency and high-temperature environments. At present, silicon carbide chips have been put into commercial application in some fields, and are expected to completely replace silicon chips as the third-generation semiconductor. At present, the third generation of silicon carbide semiconductors is about to be widely used, but there are very few solders suitable for this kind of power device packaging that can withstand high temperature service conditions, and each has its own advantages and disadvantages. Therefore, it is urgent to develop A solder capable of high melting point and high reliability.

目前,用于高温功率器件的芯片粘贴工艺主要有使用改进的合金钎料、纳米银烧结法以及瞬态液相连接(Transient Liquid Phase bonding,TLP)工艺等。这些工艺各有其特点,但也都有自身的应用局限性。高温合金钎料主要包括金基体系、铅基体系、锌基体系、铋基体系以及银基体系。在这些候选成分中,金基合金如Au–Sn(Tm=280℃)和Au–Ge(Tm=356℃)是比较普遍的高温钎料,但金基合金的共晶组织硬度很高,同时能够与其热膨胀系数相匹配的基板材料也十分有限,金基钎料成本高,也限制了其大规模的批量生产;铅基合金虽具有诸多优点,但由于铅具有毒性,随着电子产业无铅化的推进,显然不再适用于当前;锌基钎料的润湿铺展性不好,同时由于其塑性不高,易出现硬脆相;铋基钎料(如Bi-Ag)在Cu基板上的润湿性不高,结合强度较弱,塑性差,而目前绝大多数电子产品的基板均为Cu基板,所以这也限制了该钎料的应用。并且,高温合金钎料的熔点较高,进行钎焊互连时必须加热到钎料的熔点,所以焊接时更高的回流焊接温度将会对器件产生更大的可靠性损害。纳米银烧结法被业界认为是最有潜力高温无铅焊料替代产品,烧结之后的纳米银具备优良的热导率(240Wm-1K-1)和电导率(4.1×10-7Sm-1)以及较高的熔点(961℃),特别吸引人的是纳米银的烧结温度,目前业内以及实现低温甚至室温下的纳米银烧结技术,而烧结之后的纳米银熔点则恢复到961℃,这就表明如果采用纳米银来进行连接时只需要较低的回流焊接温度使纳米银彼此烧结,则得到的烧结银焊缝再次融化则需加热到961℃的高温,因此纳米银具备低温烧结所得焊点能经受高温的优点;但是,纳米银烧结技术同时又有若干缺点,比如原材料比较贵所以不适合应用于企业大批量生产;纳米银烧结技术与传统钎焊工艺生产车间的兼容性小,如果大规模应用需要设备的整体更换;应用纳米银进行烧结焊接时需要压力辅助(通常为几兆帕),而且即使如此也会因为烧结颈的限制所得的烧结之后的银具有微观的孔洞,极易成为微裂纹萌生和扩展的源,并且高温下银存在电迁移的问题,这都会对整个焊点的可靠性产生不良影响。另一种可行的方法是瞬态液相烧结法(TLPS)或固液互扩散(Solid Liquid Interdiffusion)它的焊接原理完全不同于纳米银烧结法,在TLP键合工艺中,至少需要两种组元,一种熔点低作为钎焊材料(比如锡),而另一种熔点较高作为器件的基板(比如铜),低熔点的钎料置于待连接的两高熔点基板材料之间。低温回流时,低熔点的钎料熔化并在与高熔点材料的界面处润湿铺展,使得整个组织无空隙;之后的回流过程中,两种材料在界面处发生互扩散运动并生成化合物(比如Cu6Sn5),随着扩散运动的进行化合物不断长大最终消耗掉全部的低熔点材料形成焊缝处完全是化合物的焊点。这种化合物通常具备较高熔点,从而能实现低温焊接所得焊点能经受高温的目的。这种焊接方法的优点是原材料来源广泛成本低廉,且与当前企业产线的机器有较高的加工兼容性;缺点是整个工艺流程中由于元素的扩散速度有限,就使得化合物形成和长大的速度比较慢,因此要得到全化合物焊点的组织所需时间也很长。所以TLP工艺目前仅适用于窄焊缝的焊接,由于热膨胀系数的差异,焊缝处会产生应力集中问题,而对应较窄的焊缝这个问题则更加突出,外加化合物通常为硬脆相,这就大大增加了化合物服役过程中焊点开裂失效的可能性。而增大焊缝厚度虽然可以解决应力集中的问题,但回流时间或回流温度也会因此而增大,更大的回流时间或更高的回流温度都会对基板上的其他器件带来不利影响。At present, the die-attaching process for high-temperature power devices mainly includes the use of improved alloy solder, nano-silver sintering method, and transient liquid phase bonding (Transient Liquid Phase bonding, TLP) process. Each of these processes has its own characteristics, but also has its own application limitations. Superalloy solders mainly include gold-based systems, lead-based systems, zinc-based systems, bismuth-based systems and silver-based systems. Among these candidate components, gold-based alloys such as Au–Sn (Tm=280°C) and Au–Ge (Tm=356°C) are relatively common high-temperature solders, but the eutectic structure of gold-based alloys is very hard, and at the same time Substrate materials that can match its thermal expansion coefficient are also very limited, and the high cost of gold-based solder also limits its large-scale mass production; although lead-based alloys have many advantages, due to the toxicity of lead, as the electronics industry leads to lead-free The promotion of chemicalization is obviously no longer applicable to the present; the wetting and spreading of zinc-based solder is not good, and because of its low plasticity, it is prone to hard and brittle phases; bismuth-based solder (such as Bi-Ag) on Cu substrates The wettability of solder is not high, the bonding strength is weak, and the plasticity is poor. At present, the substrates of most electronic products are Cu substrates, so this also limits the application of this solder. Moreover, the high-temperature alloy solder has a relatively high melting point, and it must be heated to the melting point of the solder when performing brazing interconnection, so a higher reflow soldering temperature during soldering will cause greater reliability damage to the device. The nano-silver sintering method is considered by the industry to be the most potential high-temperature lead-free solder replacement product. The sintered nano-silver has excellent thermal conductivity (240Wm -1 K -1 ) and electrical conductivity (4.1×10 -7 Sm -1 ) And the higher melting point (961°C), what is particularly attractive is the sintering temperature of nano-silver. At present, the nano-silver sintering technology at low temperature or even room temperature is realized in the industry, and the melting point of nano-silver after sintering returns to 961°C, which is It shows that if nano-silver is used for connection, only a lower reflow soldering temperature is required to sinter the nano-silver to each other, and the obtained sintered silver solder joint needs to be heated to a high temperature of 961°C to melt again, so the nano-silver has low-temperature sintered solder joints. The advantage of being able to withstand high temperatures; however, nano-silver sintering technology has some disadvantages at the same time. For example, the raw materials are relatively expensive so it is not suitable for mass production in enterprises; Large-scale applications require the overall replacement of equipment; when applying nano-silver for sintering and welding, pressure assistance (usually several MPa) is required, and even so, the sintered silver obtained due to the limitation of the sintering neck has microscopic pores, which is very easy to become The source of microcrack initiation and propagation, and the electromigration of silver at high temperature can have a negative impact on the reliability of the overall solder joint. Another feasible method is Transient Liquid Phase Sintering (TLPS) or Solid Liquid Interdiffusion (Solid Liquid Interdiffusion). Its welding principle is completely different from nano-silver sintering. In the TLP bonding process, at least two combinations are required. One element has a low melting point as the brazing material (such as tin), while the other has a higher melting point as the substrate of the device (such as copper), and the low melting point solder is placed between the two high melting point substrate materials to be connected. During low-temperature reflow, the solder with a low melting point melts and spreads at the interface with the high-melting point material, so that the entire tissue has no voids; during the subsequent reflow process, the two materials undergo interdiffusion motion at the interface and generate compounds (such as Cu 6 Sn 5 ), as the diffusion movement proceeds, the compound grows up and eventually consumes all the low-melting point materials to form a solder joint that is completely compounded at the weld. This compound usually has a relatively high melting point, so that the solder joints obtained by low-temperature soldering can withstand high temperatures. The advantage of this welding method is that the source of raw materials is wide and the cost is low, and it has high processing compatibility with the machines of the current enterprise production line; the disadvantage is that due to the limited diffusion rate of elements in the entire process, the formation and growth of compounds The speed is relatively slow, so it takes a long time to obtain the structure of the full compound solder joint. Therefore, the TLP process is currently only suitable for the welding of narrow welds. Due to the difference in thermal expansion coefficient, stress concentration problems will occur at the welds, and this problem is more prominent for narrower welds. The external compound is usually a hard and brittle phase. It greatly increases the possibility of solder joint cracking and failure during compound service. Although increasing the thickness of the weld seam can solve the problem of stress concentration, the reflow time or reflow temperature will also be increased. A longer reflow time or a higher reflow temperature will have an adverse effect on other devices on the substrate.

CN103753049A提供了一种Cu@Sn核壳结构金属粉的制备方法,包括:称取Cu粉,并使其完全分散于去离子水中;称取Sn溶于去离子水,Sn与Cu质量比为1:8至1:2中,搅拌均匀,形成去离子水溶液;混合并在室温下搅拌10至40分钟以确保完全反应;使用水或无水乙醇将反应产物反复清洗至溶液澄清并阴干。优选方案称取分散剂PVP,以Cu粉和分散剂的质量比1:1均匀混合后完全分散于去离子水。从而形成具有Sn包覆Cu颗粒的核壳结构,在焊接过程中,金属间化合物中弥散分布铜颗粒的焊缝结构,该结构能够在Sn的熔点以上便形成,形成后可以在Cu6Sn5熔点以下服役。该方案基于置换反应原理,当铜颗粒表面与镀液接触时,配位剂硫脲的加入拉低了铜的电极电位,使得铜原子能够与镀液中的锡离子发生置换反应,生成锡原子与游离于溶液中的铜离子,具体原理如下:CN103753049A provides a method for preparing Cu@Sn core-shell structure metal powder, comprising: weighing Cu powder and making it completely dispersed in deionized water; weighing Sn and dissolving it in deionized water, the mass ratio of Sn to Cu is 1 :8 to 1:2, stir evenly to form a deionized aqueous solution; mix and stir at room temperature for 10 to 40 minutes to ensure complete reaction; use water or absolute ethanol to wash the reaction product repeatedly until the solution is clear and dry in the shade. The preferred solution is to weigh the dispersant PVP, uniformly mix the Cu powder and the dispersant at a mass ratio of 1:1, and then completely disperse it in deionized water. In this way, a core-shell structure with Sn-coated Cu particles is formed. During the welding process, the weld structure in which copper particles are dispersed in the intermetallic compound can be formed above the melting point of Sn. After formation, it can be formed in Cu 6 Sn 5 Service below the melting point. This scheme is based on the principle of displacement reaction. When the surface of copper particles is in contact with the plating solution, the addition of complexing agent thiourea lowers the electrode potential of copper, so that copper atoms can undergo a displacement reaction with tin ions in the plating solution to generate tin atoms. With copper ions free in the solution, the specific principle is as follows:

硫脲能够与Cu2+形成稳定的配合物[Cu((NH2)2CS)2]2+,使Cu2+/Cu的电极电位向负值移动,将Sn2+置换出来。其反应方程式可以写为:Thiourea can form a stable complex with Cu 2+ [Cu((NH 2 ) 2 CS) 2 ] 2+ , which moves the electrode potential of Cu 2+ /Cu to negative value and replaces Sn 2+ . Its reaction equation can be written as:

Sn2++Cu+2(NH2)2CS=Sn+[Cu((NH2)2CS)2]2+ Sn 2+ +Cu+2(NH 2 ) 2 CS=Sn+[Cu((NH 2 ) 2 CS) 2 ] 2+

而置换反应能够发生的前提是发生置换的两种组元必须互相接触,而在此镀附反应中,虽然铜原子在硫脲的辅助下确实能置换出锡并完整的包覆在铜球表面形成核壳结构,但一旦铜表面形成致密的锡原子层完全包覆住铜球以后,铜球与镀液无法继续接触,置换反应无法持续发生进行,这也从根本上阻断了镀层继续增厚的可能性。The prerequisite for the replacement reaction to occur is that the two components to be replaced must be in contact with each other, and in this plating reaction, although copper atoms can indeed replace tin with the assistance of thiourea and completely cover the surface of the copper ball A core-shell structure is formed, but once a dense tin atomic layer is formed on the copper surface to completely cover the copper ball, the copper ball cannot continue to contact with the plating solution, and the replacement reaction cannot continue, which fundamentally blocks the continued growth of the plating layer. Thick possibility.

因此采用CN103753049A中所述的方法虽然能得到Cu@Sn核壳结构的金属粉,但镀附的锡壳部分却无法达到特定厚度使镀层具有最佳的可焊性,通常业界认为锡镀层>4μm才能使镀层具有良好的可焊性,即对于单一Cu@Sn核壳结构金属颗粒而言,铜颗粒表面镀锡层>2μm时,内部铜核才能通过外部锡壳实现优良焊接连接。Therefore, although the method described in CN103753049A can be used to obtain Cu@Sn core-shell metal powder, the tin-shell part of the plating cannot reach a specific thickness so that the coating has the best solderability. Generally, the industry believes that the tin coating is > 4 μm In order to make the coating have good solderability, that is, for a single Cu@Sn core-shell structure metal particle, when the tin coating on the surface of the copper particle is larger than 2 μm, the internal copper core can achieve excellent soldering connection through the external tin shell.

CN104117782A在CN103753049A的基础上,通过稳定剂,还原剂,抗氧化剂等药品的加入,将镀锡的反应原理由置换反应升级为自催化反应,锡原子在溶液中被还原出来并沉积在固-液界面处,一定时间的镀附之后,可在铜核表面得到具有一定厚度的度锡层。这种方法不使用分散剂,通过制得的核壳结构金属粉压制进一步制成新型预制片高温钎料,以及所述预制片用于焊盘焊接的应用,从而形成高温焊缝的方法。该结构能够在250℃短时间的回流工艺下实现对焊盘的钎焊连接,并且焊点形成后可以在676℃下稳定服役,达到低温连接高温服役的目的。但是,目前Cu@Sn核壳金属粉在压制成预置片的工艺中性能得到良好体现,但在将金属粉制备成钎料膏时,使用膏体焊接之后所得焊缝孔隙率明显较多,连接强度相对较低,关于这种核壳结构的金属粉这钎料膏的推广应用在之后的研究中亟待突破。CN104117782A, on the basis of CN103753049A, through the addition of stabilizers, reducing agents, antioxidants and other drugs, the reaction principle of tin plating is upgraded from displacement reaction to self-catalysis reaction, tin atoms are reduced in the solution and deposited on the solid-liquid At the interface, after a certain period of plating, a tin layer with a certain thickness can be obtained on the surface of the copper core. This method does not use a dispersant, and further produces a new type of prefabricated high-temperature solder by pressing the obtained core-shell structure metal powder, and the application of the prefabricated sheet for pad welding, thereby forming a method of high-temperature welds . This structure can realize the brazing connection to the pad under the short-time reflow process at 250°C, and after the solder joint is formed, it can be stably served at 676°C, achieving the purpose of low-temperature connection and high-temperature service. However, at present, the performance of Cu@Sn core-shell metal powder is well reflected in the process of pressing into pre-chips, but when the metal powder is prepared into solder paste, the porosity of the weld seam obtained after welding with paste is significantly higher. The connection strength is relatively low, and the popularization and application of this core-shell metal powder and solder paste needs to be broken through in subsequent research.

本发明基于现有技术在高温连接领域各种钎焊方法与钎焊材料存在的问题,创新性的提出了一种核壳结构金属粉的制备方法,并首次将这种金属粉应用在了高温连接领域,圆满的解决了业内普遍面临的难题。Based on the problems existing in various brazing methods and brazing materials in the field of high-temperature connection in the prior art, the present invention innovatively proposes a method for preparing metal powder with a core-shell structure, and applies this metal powder to high-temperature applications for the first time. In the field of connection, it satisfactorily solves the problems commonly faced by the industry.

发明内容Contents of the invention

为了解决上述现有技术存在的不足,本发明提供了一种微纳米铜球表面镀附具有可焊性厚度的厚锡层的镀附方法,制得微、纳米级Cu@Sn核壳结构金属粉,以及这种低温瞬态液相连接的LT-TLPS(Low Time-Transient Liquid Phase Soldering)金属粉在高温钎料领域的应用。In order to solve the deficiencies in the above-mentioned prior art, the present invention provides a plating method for coating the surface of micro-nano copper balls with a thick tin layer with a solderable thickness, so as to prepare micro-nano-scale Cu@Sn core-shell structure metals. Powder, and the application of this low-temperature transient liquid phase-connected LT-TLPS (Low Time-Transient Liquid Phase Soldering) metal powder in the field of high-temperature solder.

一种微纳米铜球表面镀附具有可焊性厚度的厚锡层的镀附方法,包括:A method for plating a thick tin layer with solderability thickness on the surface of a micro-nano copper ball, comprising:

(1)、称取配位剂,还原剂,稳定剂,抗氧化剂以及适量的甲磺酸和乙二醇,加入超纯净去离子水,加热到80℃并施加搅拌,直至溶液完全溶解得到溶液A;(1) Weigh the complexing agent, reducing agent, stabilizer, antioxidant and appropriate amount of methanesulfonic acid and ethylene glycol, add ultra-pure deionized water, heat to 80 ° C and apply stirring until the solution is completely dissolved to obtain a solution A;

优选称取配位剂,还原剂,稳定剂,抗氧化剂以及适量的甲磺酸和乙二醇,加入超纯净去离子水,配位剂浓度为1.2~1.5mol/L,还原剂浓度为0.75~0.9mol/L,稳定剂浓度为0.002~0.0035mol/L,抗氧化剂浓度为0.003~0.004mol/L,甲磺酸浓度为0.075~0.1mol/L,乙二醇浓度为10~15ml/L,加热到80℃并施加搅拌,直至溶液完全溶解得到溶液A;It is preferable to weigh the complexing agent, reducing agent, stabilizer, antioxidant and appropriate amount of methanesulfonic acid and ethylene glycol, add ultra-pure deionized water, the concentration of the complexing agent is 1.2-1.5mol/L, and the concentration of the reducing agent is 0.75 ~0.9mol/L, stabilizer concentration 0.002~0.0035mol/L, antioxidant concentration 0.003~0.004mol/L, methanesulfonic acid concentration 0.075~0.1mol/L, ethylene glycol concentration 10~15ml/L , heated to 80°C and applied stirring until the solution was completely dissolved to obtain solution A;

通过大量的实验研究发现温度选择只有80℃可以实现,低于八十度溶质的溶解度不能达到要求使之前所称量的各种溶质完全溶解,如果使用溶质未完全溶解的镀液进行后续镀附操作会有两个缺点无法避免:Through a large number of experimental studies, it is found that the temperature selection can only be achieved at 80°C, and the solubility of the solute below 80 degrees cannot meet the requirements to completely dissolve the various solutes weighed before. If the solute is not completely dissolved in the plating solution for subsequent plating Operation has two unavoidable disadvantages:

1,溶质未完全溶解,部分溶质本应在镀液中起到的作用无法完全呈现,比如镀液还原能力不足或稳定性欠佳。1. The solute is not completely dissolved, and some of the solute’s role in the plating solution cannot be fully displayed, such as insufficient reducing ability or poor stability of the plating solution.

2,溶质不能完全溶解而后续的长时间高转速镀附是在室温下进行的,如果这一步溶质不能完全溶解后续操作过程中溶质一直无法溶解,使得一直到最后目标金属粉在过滤清洗过程中仍然有很多第一步中未能完全溶解的溶质即无机盐掺杂在最终获得的和壳结构金属粉中,无法分离,这是因为核壳结构金属粉作为新型焊接材料具有高度的温度敏感性,如果将制得的金属粉与无机盐再次加热到80℃,虽然无机盐会溶解从而过滤得到金属粉,而Cu@Sn核壳结构的金属粉在80℃下回发生不可逆的相变,锡壳部分由于铜原子的扩散完全转变成Cu-Sn化合物丧失可焊性从而金属粉丧失其最基本的价值,因此金属粉一旦制成除非在回流焊接那一步,否则其他步骤里是不可以再次加热,这也是为什么在前期镀附过程中必须保证无机盐充分溶解。高于80℃的温度虽然也能使得溶质溶解,但过高的温度使得溶液挥发迅速,不利于镀液量的稳定把握。2. The solute cannot be completely dissolved and the subsequent long-term high-speed plating is carried out at room temperature. If the solute cannot be completely dissolved in this step, the solute cannot be dissolved during the subsequent operation, so that the target metal powder is filtered and cleaned until the end. There are still a lot of solutes that cannot be completely dissolved in the first step, that is, inorganic salts, which are doped in the finally obtained and shell-structured metal powders, which cannot be separated, because core-shell structure metal powders are highly temperature-sensitive as new welding materials , if the prepared metal powder and inorganic salt are heated to 80°C again, although the inorganic salt will dissolve and the metal powder will be obtained by filtration, while the metal powder with Cu@Sn core-shell structure will undergo an irreversible phase transition at 80°C, and the tin The shell part is completely transformed into Cu-Sn compound due to the diffusion of copper atoms, and the metal powder loses its most basic value. Therefore, once the metal powder is made, it cannot be reheated in other steps unless it is in the reflow soldering step. , which is why it is necessary to ensure that the inorganic salt is fully dissolved during the early plating process. Although the temperature higher than 80°C can also dissolve the solute, the too high temperature makes the solution volatilize rapidly, which is not conducive to the stable control of the plating solution volume.

所述配位剂优选为硫脲,所述还原剂优选为次亚磷酸钠,所述稳定剂优选为乙二胺四乙酸,所述抗氧化剂优选为对苯二酚与抗坏血酸。The complexing agent is preferably thiourea, the reducing agent is preferably sodium hypophosphite, the stabilizer is preferably ethylenediaminetetraacetic acid, and the antioxidant is preferably hydroquinone and ascorbic acid.

以上各成分以及对应含量如果选择失当,主要不良表现在镀层厚度不够,镀层包覆结果欠佳,镀层出现锡须,表面氧化严重不利于下一步金属粉的焊接应用。If the above components and corresponding contents are selected improperly, the main disadvantages are that the coating thickness is not enough, the coating coating result is not good, tin whiskers appear on the coating, and the surface oxidation is seriously unfavorable for the welding application of metal powder in the next step.

(2)、称取适量铜粉,清洗去除表面污渍以及氧化层,并活化铜球表面,再用去离子水清洗,待用;(2), weigh an appropriate amount of copper powder, clean and remove surface stains and oxide layers, and activate the surface of copper balls, then clean with deionized water and set aside;

优选采用将铜粉按照质量比1:10置于体积比5%的盐酸-乙醇溶液中,加入表面活化剂并施加超声对铜粉进行,再用去离子水清洗铜粉4遍待用,所述表面活化剂优选为聚乙二醇,聚乙二醇:乙醇质量比=1:100。Preferably, the copper powder is placed in a hydrochloric acid-ethanol solution with a volume ratio of 5% according to a mass ratio of 1:10, a surfactant is added and ultrasonic waves are applied to the copper powder, and then the copper powder is cleaned with deionized water for 4 times for later use. The surfactant is preferably polyethylene glycol, polyethylene glycol: ethanol mass ratio=1:100.

铜粉粒径优选为微纳米级,从纳米铜粉到50微米以下的微米铜粉,此配方均可实现较为优良的镀附结果。The particle size of the copper powder is preferably at the micro-nano level, from nano-copper powder to micro-copper powder below 50 microns, this formula can achieve relatively good plating results.

(3)、称取1.8~2.5g氯化亚锡并溶于1ml盐酸中,作为溶液B;(3), take by weighing 1.8~2.5g stannous chloride and dissolve in 1ml hydrochloric acid, as solution B;

所述盐酸选用为纯盐酸,因氯化亚锡可以水解,固将其溶解于盐酸中。Described hydrochloric acid is selected as pure hydrochloric acid for use, because stannous chloride can be hydrolyzed, it is dissolved in hydrochloric acid solidly.

(4)、在80℃下将溶液B倒入处于搅拌中的溶液A中,待混合均匀后调整镀液温度与pH值到合适范围;(4) Pour the solution B into the stirring solution A at 80°C, and adjust the temperature and pH of the plating solution to a suitable range after mixing evenly;

所述两种溶液混合后调整镀液的合适温度优选为20~35℃,所述合适pH值优选为0.8~1。The suitable temperature for adjusting the plating solution after mixing the two solutions is preferably 20-35° C., and the suitable pH value is preferably 0.8-1.

通过大量的实验研究发现温度区间如果高于所述值,核壳结构金属粉在镀附过程中由于微纳米级颗粒高的表面能极易发生相变使锡转化为Cu-Sn化合物丧失可焊性,低于所述值则反应速率大幅降低,极大的延长了镀附反应所需时间。Through a large number of experimental studies, it is found that if the temperature range is higher than the stated value, the core-shell structure metal powder is prone to phase change due to the high surface energy of the micro-nano particles during the plating process, and the tin is converted into a Cu-Sn compound and loses its solderability. If it is lower than the value, the reaction rate is greatly reduced, which greatly prolongs the time required for the plating reaction.

pH值过高或过低于所述范围,镀锡效果不佳,且所述pH范围内镀附速度是最快的。If the pH value is too high or too low, the tin plating effect will be poor, and the plating speed is the fastest in the pH range.

(5)、将步骤(2)处理得到铜粉倒入A和B的混合溶液中,提高搅拌速率,电磁搅拌与玻璃棒手工搅拌交替进行,保证反应3h;(5), the copper powder that step (2) is processed is poured in the mixed solution of A and B, increases stirring speed, and electromagnetic stirring and glass rod manual stirring are carried out alternately, guarantees reaction 3h;

所述两种溶液混合后提高的搅拌速率优选为300rpm。The increased stirring rate after mixing of the two solutions is preferably 300 rpm.

(6)、过滤镀液并清洗金属粉,得到表面镀附有厚锡层的基于Cu@Sn核-壳结构双金属粉。(6), filtering the plating solution and cleaning the metal powder to obtain a Cu@Sn core-shell structure based bimetallic powder with a thick tin layer on the surface.

所述加热与搅拌是指在水浴中电磁搅拌。The heating and stirring refer to electromagnetic stirring in a water bath.

所述微、纳米级基于Cu@Sn核壳结构金属粉是指介于20nm与50μm之间各个尺寸级别的铜核表面镀附具有可焊性厚度(>3μm)的锡金属层的核壳结构。The micro- and nano-scale metal powder based on Cu@Sn core-shell structure refers to a core-shell structure in which copper cores of various sizes between 20nm and 50 μm are plated with a tin metal layer with a solderable thickness (>3 μm) .

本发明方法所需物质条件简单,成本低廉具有非常广阔的企业实际推广应用前景,另外,相比纳米材料烧结等其他高熔点焊点的制备方法此方法制备出来的材料进行焊接时与传统工业中回流焊接产线兼容度更好,非常有利于在现有加工设备基础上进行制备和推广应用。The material conditions required by the method of the present invention are simple, the cost is low, and there are very broad prospects for practical promotion and application in enterprises. In addition, compared with other preparation methods of high melting point solder joints such as nanomaterial sintering, the materials prepared by this method are comparable to those in traditional industries when welding. The reflow soldering production line has better compatibility, which is very conducive to the preparation and promotion of applications on the basis of existing processing equipment.

更为具体的制备方法步骤详述如下:More specific preparation method steps are described in detail as follows:

(1)、称取次亚磷酸钠(0.86mol/l),硫脲(1.3mol/L),对苯二酚(0.0036mol/L),乙二胺四乙酸(0.0028mol/L)溶于50ml去离子水,加入甲磺酸(0.083mol/L),乙二醇(15ml/L)水浴加热到80℃,施加电磁搅拌,搅拌速度为100rpm,待溶质完全溶解得到溶液A。(1), Weigh sodium hypophosphite (0.86mol/l), thiourea (1.3mol/L), hydroquinone (0.0036mol/L), ethylenediaminetetraacetic acid (0.0028mol/L) dissolved in Add methanesulfonic acid (0.083mol/L) and ethylene glycol (15ml/L) to 50ml of deionized water and heat in a water bath to 80°C, apply electromagnetic stirring at a stirring speed of 100rpm, and wait until the solute is completely dissolved to obtain solution A.

(2)、称取铜粉4g,置于5%的盐酸-乙醇溶液中酸洗,同时加入表面活化剂聚乙二醇(2g/L)并对铜粉进行超声清洗去除表面污渍以及氧化层同时活化铜球表面,最后用去离子水清洗铜粉4遍待用;(2), weigh 4g of copper powder, place it in 5% hydrochloric acid-ethanol solution for pickling, add surfactant polyethylene glycol (2g/L) at the same time and carry out ultrasonic cleaning to copper powder to remove surface stains and oxide layer At the same time, activate the surface of the copper ball, and finally wash the copper powder with deionized water 4 times for later use;

(3)、称取2g氯化亚锡并溶于1mL纯盐酸中,作为溶液B;(3), take by weighing 2g stannous chloride and be dissolved in 1mL pure hydrochloric acid, as solution B;

(4)、将80℃溶液B倒入处于搅拌中的溶液A中,调整混合溶液的温度至30℃,并且通过添加氨水和盐酸的方法调整镀液pH为0.8-1之间,整个过程中溶液一直处于以100rpm搅拌的状态;(4) Pour 80°C solution B into the stirring solution A, adjust the temperature of the mixed solution to 30°C, and adjust the pH of the plating solution to be between 0.8-1 by adding ammonia water and hydrochloric acid, during the whole process The solution has been in a state of stirring at 100rpm;

(5)、30℃下将之前第二步中酸洗并表面处理好的铜粉倒入A和B的混合溶液中,同时提高电磁搅拌速率至300rpm;但是电磁搅拌的同时要穿插手工玻璃棒搅拌以保证颗粒在镀液中的状态均匀,电磁搅拌每进行20min切换到手工玻璃棒搅拌5min,循环往复保证反应时间为3h;(5) Pour the copper powder pickled and surface-treated in the previous second step into the mixed solution of A and B at 30°C, and increase the electromagnetic stirring rate to 300rpm; but the electromagnetic stirring must be interspersed with manual glass rods Stir to ensure that the state of the particles in the plating solution is uniform, and switch to the manual glass rod for 5 minutes every 20 minutes of electromagnetic stirring, and reciprocate to ensure that the reaction time is 3 hours;

(6)、过滤镀液并清洗金属粉,得到表面镀附有厚锡层的基于Cu@Sn核-壳结构双金属粉。(6), filtering the plating solution and cleaning the metal powder to obtain a Cu@Sn core-shell structure based bimetallic powder with a thick tin layer on the surface.

本发明的在一目的在于提供一种高温纤料的预置片,其通过以下制备方法步骤制备得到:(7)、将Cu@Sn核-壳结构双金属粉在30Mpa压力下压制成预置片。One object of the present invention is to provide a pre-set sheet of high-temperature fiber material, which is prepared by the following preparation method steps: (7), Cu@Sn core-shell structure bimetallic powder is pressed under 30Mpa pressure to form a pre-set sheet piece.

使用所述压制的高温纤料的预置片进行焊接即可实现低温(250℃)焊接,所得焊点能经受高温(676℃)的目的。Low-temperature (250° C.) welding can be realized by using the pressed pre-sheet of high-temperature fiber material for welding, and the obtained solder joints can withstand high temperature (676° C.).

本发明人通过大量实验研究后发现,本发明配方和试验方法对20nm~50μm尺寸范围内的铜球均可实现在铜球表面镀附一层具有可焊性厚度的纯锡层,使用这种核壳结构金属粉压制的预置片进行焊接时能极大的缩短焊缝完全IMC化所需的时间,从而在短时间低温度下即可实现The inventors have found through a large number of experimental studies that the formula and test method of the present invention can achieve a pure tin layer with solderability thickness on the surface of copper balls for copper balls in the size range of 20nm to 50 μm. The core-shell structure metal powder pressed preset sheet can greatly shorten the time required for the complete IMC of the weld seam when welding, so that it can be realized in a short time and low temperature

相比现有技术,本发明的优点在于:Compared with the prior art, the present invention has the advantages of:

1、传统钎料的熔点较低,难以满足较高温度服役的器件,而被业界目前最为看好的纳米银烧结法具有不可避免的银迁移问题会极大降低焊点可靠性,并且纳米银的成本高昂不适合企业大规模生产。本发明制备的Cu@Sn核壳金属粉原材料为铜粉,镀附过程中所需的药品成本也很低廉,加工工艺简单,同时具有与纳米银烧结法一样低温下可实现焊接连接且所得焊点能经受高温服役的优点。1. The melting point of traditional solder is low, which is difficult to meet the requirements of higher temperature devices. However, the most promising nano-silver sintering method in the industry has the inevitable silver migration problem, which will greatly reduce the reliability of solder joints, and the nano-silver The high cost is not suitable for large-scale production of enterprises. The raw material of the Cu@Sn core-shell metal powder prepared by the present invention is copper powder, the cost of medicines required in the plating process is also very low, and the processing technology is simple. Point can withstand the advantages of high temperature service.

2、纳米银烧结工艺与传统工艺相差较大,无法与企业现有的产线相兼容,如果大规模生产需要重新搭建产线。而本方案所提供的通过Cu@Sn核壳金属粉压制而成的焊接材料与传统钎料的回流焊接工艺兼容度好,企业在现有产线上无需做过多更改即可实现,更容易推广应用。2. The nano-silver sintering process is quite different from the traditional process, and cannot be compatible with the existing production line of the enterprise. If large-scale production requires a new production line. However, the welding materials provided by this solution, which are compressed by Cu@Sn core-shell metal powder, are well compatible with the reflow soldering process of traditional solders. Enterprises can realize it without making too many changes on the existing production line, which is easier. Promote apps.

3、由于铜颗粒均匀分布在焊缝中,焊缝内部残余锡消耗所需的时间大幅缩短,这大大降低了器件因为经受过长时间的回流而受热损毁的可能性。3. Since the copper particles are evenly distributed in the weld, the time required for the consumption of residual tin inside the weld is greatly shortened, which greatly reduces the possibility of heat damage to the device due to prolonged reflow.

4、铜具有优秀的导电和导热能力,相较与传统的锡基钎料来说,铜颗粒夹杂在焊缝中能极大的提高焊缝的导电和导热能力。4. Copper has excellent electrical and thermal conductivity. Compared with traditional tin-based solder, copper particles mixed in the weld can greatly improve the electrical and thermal conductivity of the weld.

5、传统焊缝结构由两个焊盘中间夹钎料,原子扩散只能发生在截面处所以焊缝完全化合物话的时间取决于焊缝的厚度,而由Cu@Sn核壳金属粉压制成的预置片形成的焊缝,完全化合物化的时间取决于铜球表面镀锡层的厚度,因此使得短时间内更厚的焊缝得以完全IMC化成为可能。而厚焊缝能明显的缓解焊缝处因不同材料热膨胀系数不同而导致的应力集中的问题,从而大幅提高焊点的可靠性。5. The traditional weld structure is sandwiched between two solder pads, and the atomic diffusion can only occur at the cross section, so the time for the weld to be completely compounded depends on the thickness of the weld, and it is made of Cu@Sn core-shell metal powder. The time for complete compounding of the solder formed by the pre-chip depends on the thickness of the tin-plated layer on the surface of the copper ball, so it is possible to completely IMC the thicker solder in a short time. The thick weld seam can significantly alleviate the stress concentration problem caused by the different thermal expansion coefficients of different materials at the weld seam, thereby greatly improving the reliability of the solder joints.

附图说明Description of drawings

图1为经FIB切开后的Cu@Sn核壳结构金属颗粒的剖面图。Figure 1 is a cross-sectional view of a Cu@Sn core-shell metal particle cut by FIB.

图2为采用Cu@Sn核壳结构金属粉在低温短时条件下制备的高熔点互连焊点,图中:0201为铜基板;0202为Cu@Sn核壳金属粉压制成的预置片。Figure 2 shows the high-melting point interconnection solder joints prepared by using Cu@Sn core-shell metal powder under low temperature and short-term conditions. In the figure: 0201 is the copper substrate; 0202 is the preset sheet made by pressing Cu@Sn core-shell metal powder .

图3为采用Cu@Sn核壳结构金属粉制备的预置片组织放大图,其中:0301为铜核,0302为回流前铜核表面镀附的锡壳部分在回流后转化成高熔点的Cu3Sn化合物。Figure 3 is an enlarged view of the prefabricated sheet structure prepared by Cu@Sn core-shell metal powder, in which: 0301 is the copper core, and 0302 is the part of the tin shell plated on the surface of the copper core before reflow, which is converted into Cu with a high melting point after reflow 3 Sn compounds.

图4为本发明一种实施方式得到的30微米粒径核壳结构颗粒以及焊缝组织示意图其中,颗粒示意图4(a),焊缝组织示意图4(b),4(c)为4(a)另一尺寸下的示意图,4(d)为4(c)的局部放大图。Fig. 4 is a schematic diagram of the 30-micron particle size core-shell structure particles obtained in an embodiment of the present invention and a schematic diagram of the weld structure. Among them, the schematic diagram of the particles 4 (a), the schematic diagram of the weld structure 4 (b), and 4 (c) are 4 (a) ) is a schematic diagram at another size, and 4(d) is a partial enlarged view of 4(c).

图5为本发明一种实施方式得到的1微米粒径核壳结构颗粒以及焊缝组织示意图其中,颗粒示意图5(a),焊缝组织示意图5(b),5(c)为5(a)焊后的示意图。Fig. 5 is a schematic diagram of core-shell structure particles with a particle size of 1 micron and a weld structure obtained by an embodiment of the present invention. Among them, the schematic diagram of the particles 5 (a), the schematic diagram of the weld structure 5 (b), and 5 (c) are 5 (a) ) Schematic diagram after welding.

具体实施方式Detailed ways

下面通过具体实例及说明书附图说明本发明的实现途径,但不仅限于此。The implementation of the present invention will be described below through specific examples and accompanying drawings, but not limited thereto.

实施实例1,参考图1、2和3:Implementation example 1, with reference to Figures 1, 2 and 3:

基于以上考虑,我们通过大量的试验尝试和数据分析,发明了这种微纳米铜球表面镀附可焊性厚锡层的镀附方法,通过这种镀附方法成功实现了室温下在微纳米级铜球表面镀附厚锡层的目的。Based on the above considerations, through a large number of experimental attempts and data analysis, we invented the plating method for plating the surface of micro-nano copper balls with a solderable thick tin layer. The purpose of plating a thick tin layer on the surface of the copper ball.

该方法具体包括以下步骤(以采用50ml镀液对4g粒径为30μm的铜粉镀锡并最终将其制成耐高温焊点为例):The method specifically includes the following steps (using 50ml of plating solution to tinplate 4g of copper powder with a particle size of 30 μm and finally making it into a high-temperature-resistant solder joint as an example):

(1)、称量次亚磷酸钠3.7g,硫脲5g,对苯二酚0.02g,乙二胺四乙酸0.04g,溶于50ml去离子水中并施加搅拌,搅拌速率100rpm,加入甲磺酸0.4g,乙二醇0.7ml,将溶液置于水浴中加热至80℃待溶质完全溶解得到溶液A。(1), weigh 3.7g of sodium hypophosphite, 5g of thiourea, 0.02g of hydroquinone, 0.04g of ethylenediaminetetraacetic acid, dissolve in 50ml of deionized water and apply stirring at a stirring rate of 100rpm, add methanesulfonic acid 0.4g, 0.7ml of ethylene glycol, put the solution in a water bath and heat to 80°C until the solute is completely dissolved to obtain solution A.

(2)、称取粒径为30μm的铜粉4g,置于5%的盐酸-乙醇溶液中施加超声酸洗,目的是去除铜粉表面的污渍以及氧化层,同时加入0.1g聚乙二醇对铜粉表面进行活化,最后用去离子水清洗铜粉4遍待用。(2) Weigh 4g of copper powder with a particle size of 30 μm, place it in 5% hydrochloric acid-ethanol solution and apply ultrasonic pickling, the purpose is to remove the stain and oxide layer on the surface of copper powder, and add 0.1g polyethylene glycol at the same time Activate the surface of the copper powder, and finally wash the copper powder with deionized water 4 times for later use.

(3)、称取2g氯化亚锡并溶于1ml纯盐酸中,作为溶液B;(3), take by weighing 2g stannous chloride and be dissolved in 1ml pure hydrochloric acid, as solution B;

(4)、将80℃溶液B倒入处于搅拌中的溶液A中,调整混合溶液的温度至30℃,并且通过添加氨水和盐酸的方法调整镀液pH在0.8-1之间,整个过程中溶液一直处于以100rpm搅拌的状态;(4) Pour the 80°C solution B into the stirring solution A, adjust the temperature of the mixed solution to 30°C, and adjust the pH of the plating solution to be between 0.8-1 by adding ammonia water and hydrochloric acid. The solution has been in a state of stirring at 100rpm;

(5)、30℃下将之前第二步中酸洗并表面处理好的铜粉倒入A和B的混合溶液中,同时提高电磁搅拌速率至300rpm;但是电磁搅拌的同时要穿插手工玻璃棒搅拌以保证颗粒在镀液中的状态均匀,电磁搅拌每进行20min切换到手工玻璃棒搅拌5min,循环往复保证反应时间为3h;(5) Pour the copper powder pickled and surface-treated in the previous second step into the mixed solution of A and B at 30°C, and increase the electromagnetic stirring rate to 300rpm; but the electromagnetic stirring must be interspersed with manual glass rods Stir to ensure that the state of the particles in the plating solution is uniform, and switch to the manual glass rod for 5 minutes every 20 minutes of electromagnetic stirring, and reciprocate to ensure that the reaction time is 3 hours;

(6)、过滤镀液并清洗金属粉,得到表面镀附有厚锡层的粒径为30μm的Cu@Sn双金属核壳结构。(6) Filtrating the plating solution and cleaning the metal powder to obtain a Cu@Sn dual metal core-shell structure with a particle size of 30 μm and a thick tin layer on the surface.

(7)、将Cu@Sn核壳金属粉在30Mpa压力下压制成预置片,使用压制的预置片进行焊接即可实现低温(250℃)焊接,所得焊点能经受高温(676℃)的目的。(7) Press the Cu@Sn core-shell metal powder into a preset sheet under a pressure of 30Mpa, and use the pressed preset sheet for welding to achieve low temperature (250°C) welding, and the obtained solder joints can withstand high temperature (676°C) the goal of.

所得核壳结构颗粒以及焊缝组织如下图4(a)-4(d)所示:The obtained core-shell structure particles and weld structure are shown in Figure 4(a)-4(d):

经大量实验验证,这种焊缝的电阻率为6.50μΩ·cm,导电性能远优于传统的锡基钎料(11.5μΩ·cm)以及传统TLP工艺制得的完全由铜-锡化合物组成的纯IMC焊点(Cu6Sn5:16.5μΩ·cm;Cu3Sn:8.9μΩ·cm),与纳米银烧结之后的焊缝处于相同量级(2.5-10μΩ·cm)。It has been verified by a large number of experiments that the resistivity of this weld is 6.50μΩ·cm, and its electrical conductivity is far superior to that of traditional tin-based solder (11.5μΩ·cm) and the copper-tin compound made by traditional TLP process. The pure IMC solder joints (Cu 6 Sn 5 : 16.5 μΩ·cm; Cu 3 Sn: 8.9 μΩ·cm) are in the same order (2.5-10 μΩ·cm) as the welds after nano-silver sintering.

同时这种新型焊缝由于铜颗粒掺杂其中,使其热导率高达154.26W/m·K,导热性能同样大幅优于锡基钎料(63.2W/m·K)以及纯IMC焊点(Cu6Sn5:34.1W/m·K;Cu3Sn:70.4W/m·K)。At the same time, due to the doping of copper particles in this new type of weld, its thermal conductivity is as high as 154.26W/m K, and its thermal conductivity is also much better than that of tin-based solder (63.2W/m K) and pure IMC solder joints ( Cu 6 Sn 5 : 34.1 W/m·K; Cu 3 Sn: 70.4 W/m·K).

另外这种焊缝在400℃下以0.1mm/min速率高温剪切时,剪切强度的均值达到29MPa,足以满足器件在任何苛刻情况下的可靠性服役。In addition, when the weld is sheared at a high temperature of 0.1mm/min at 400°C, the average shear strength reaches 29MPa, which is enough to meet the reliability service of the device under any harsh conditions.

实施实例2,Implementation example 2,

为了验证此配方对各个粒径范围的铜粉均具有优秀的镀附具有可焊性的厚锡层效果,我们格外选取粒径为1μm的铜粉进行镀锡操作,并最终将粒径为1微米的Cu@Sn核壳铜粉制备成预置片,用于实际焊接得到能经受高温服役的焊点。In order to verify that this formula has an excellent coating effect on thick tin layers with solderability for copper powders of various particle sizes, we specially selected copper powders with a particle size of 1 μm for tin plating, and finally tinned the copper powder with a particle size of 1 The micron Cu@Sn core-shell copper powder is prepared into a pre-chip for actual welding to obtain solder joints that can withstand high temperature service.

该方法具体包括以下步骤(以采用100ml镀液对8g粒径为1μm的铜粉镀锡并最终将其制成耐高温焊点为例):The method specifically includes the following steps (using 100ml of plating solution to tinplate 8g of copper powder with a particle size of 1 μm and finally making it into a high-temperature-resistant solder joint as an example):

(1)、称量次亚磷酸钠7.4g,硫脲10g,对苯二酚0.04g,乙二胺四乙酸0.08g,溶于100ml去离子水中并施加搅拌,搅拌速率100rpm,加入甲磺酸0.8g,乙二醇1.4ml,将溶液置于水浴中加热至80℃待溶质完全溶解得到溶液A。(1), Weigh 7.4g of sodium hypophosphite, 10g of thiourea, 0.04g of hydroquinone, 0.08g of ethylenediaminetetraacetic acid, dissolve in 100ml of deionized water and apply stirring at a stirring rate of 100rpm, add methanesulfonic acid 0.8g, 1.4ml ethylene glycol, put the solution in a water bath and heat to 80°C until the solute is completely dissolved to obtain solution A.

(2)、称取粒径为1μm的铜粉8g,置于5%的盐酸-乙醇溶液中施加超声酸洗,目的是去除铜粉表面的污渍以及氧化层,同时加入0.2g聚乙二醇对铜粉表面进行活化,最后用去离子水清洗铜粉4遍待用。(2), Weigh 8g of copper powder with a particle size of 1 μm, place it in 5% hydrochloric acid-ethanol solution and apply ultrasonic pickling, the purpose is to remove the stains and oxide layer on the surface of the copper powder, and add 0.2g polyethylene glycol at the same time Activate the surface of the copper powder, and finally wash the copper powder with deionized water 4 times for later use.

(3)、称取4g氯化亚锡并溶于2ml纯盐酸中,作为溶液B;(3), take by weighing 4g stannous chloride and be dissolved in 2ml pure hydrochloric acid, as solution B;

(4)、将80℃溶液B倒入处于搅拌中的溶液A中,调整混合溶液的温度至30℃,并且通过添加氨水和盐酸的方法调整镀液pH在0.8-1之间,整个过程中溶液一直处于以100rpm搅拌的状态;(4) Pour the 80°C solution B into the stirring solution A, adjust the temperature of the mixed solution to 30°C, and adjust the pH of the plating solution to be between 0.8-1 by adding ammonia water and hydrochloric acid. The solution has been in a state of stirring at 100rpm;

(5)、30℃下将之前第二步中酸洗并表面处理好的铜粉倒入A和B的混合溶液中,同时提高电磁搅拌速率至300rpm;但是电磁搅拌的同时要穿插手工玻璃棒搅拌以保证颗粒在镀液中的状态均匀,电磁搅拌每进行20min切换到手工玻璃棒搅拌5min,循环往复保证反应时间为3h;(5) Pour the copper powder pickled and surface-treated in the previous second step into the mixed solution of A and B at 30°C, and increase the electromagnetic stirring rate to 300rpm; but the electromagnetic stirring must be interspersed with manual glass rods Stir to ensure that the state of the particles in the plating solution is uniform, and switch to the manual glass rod for 5 minutes every 20 minutes of electromagnetic stirring, and reciprocate to ensure that the reaction time is 3 hours;

(6)、过滤镀液并清洗金属粉,得到表面镀附有厚锡层的粒径为1μm的Cu@Sn双金属核壳结构。(6) Filtrating the plating solution and cleaning the metal powder to obtain a Cu@Sn dual metal core-shell structure with a particle size of 1 μm and a thick tin layer on the surface.

(7)、将Cu@Sn核壳金属粉在30Mpa压力下压制成预置片,使用压制的预置片进行焊接即可实现低温(250℃)焊接,所得焊点能经受高温(676℃)的目的。(7) Press the Cu@Sn core-shell metal powder into a preset sheet under a pressure of 30Mpa, and use the pressed preset sheet for welding to achieve low temperature (250°C) welding, and the obtained solder joints can withstand high temperature (676°C) the goal of.

所得核壳结构颗粒以及焊缝组织如下图5(a)-5(c):The resulting core-shell structure particles and weld structure are shown in Figure 5(a)-5(c):

焊缝依然具有优秀的导电导热能力以及低温即可实现回流焊接,所得焊点能耐高温的特性。The weld seam still has excellent electrical and thermal conductivity and reflow soldering can be realized at low temperature, and the obtained solder joints can withstand high temperature.

对比实施例1Comparative Example 1

采用CN104117782A方法制备的高温钎料High-temperature solder prepared by CN104117782A method

效果对比发现,主要区别主要体现在如图4.b中,新的镀附工艺能实现镀层更厚,更好的满足焊接要求,从而使最终制得的预置片导电导热及机械连接性能更加优越。The effect comparison found that the main difference is mainly reflected in Figure 4.b. The new plating process can achieve a thicker coating and better meet the welding requirements, so that the final prefabricated sheet has better electrical and thermal conductivity and mechanical connection performance. superior.

对比实施例2Comparative Example 2

采用CN103753049A方法制备的高温钎料High-temperature solder prepared by CN103753049A method

效果对比发现,将金属粉制备成钎料膏时,使用膏体焊接之后所得焊缝孔隙率明显较多,连接强度相对较低。The effect comparison shows that when the metal powder is prepared into solder paste, the porosity of the weld seam obtained after welding with the paste is obviously more, and the connection strength is relatively low.

Claims (4)

1.一种微纳米铜球表面镀附具有可焊性厚度的厚锡层的镀附方法,其特征在于,包括:1. a kind of micronano copper ball surface is plated and has the plating method of the thick tin layer of weldability thickness, it is characterized in that, comprises: (1)、称取配位剂,还原剂,稳定剂,抗氧化剂以及甲磺酸和乙二醇,加入超纯净去离子水,配位剂为硫脲,所述还原剂为次亚磷酸钠,所述稳定剂为乙二胺四乙酸,所述抗氧化剂为对苯二酚或抗坏血酸;加入超纯净去离子水后,对苯二酚:水质量比=0.006:1,抗坏血酸:水=0.008:1;配位剂浓度为1.2~1.5mol/L,还原剂浓度为0.75~0.9mol/L,稳定剂浓度为0.002~0.0035mol/L,甲磺酸浓度为0.075~0.1mol/L,乙二醇浓度为10~15ml/L,加热到80℃并施加搅拌,直至溶液完全溶解得到溶液A;(1), take complexing agent, reducing agent, stabilizer, antioxidant and methanesulfonic acid and ethylene glycol, add ultra-pure deionized water, complexing agent is thiourea, and described reducing agent is sodium hypophosphite , the stabilizer is ethylenediaminetetraacetic acid, and the antioxidant is hydroquinone or ascorbic acid; after adding ultra-pure deionized water, hydroquinone: water mass ratio=0.006:1, ascorbic acid: water=0.008 : 1; the concentration of complexing agent is 1.2~1.5mol/L, the concentration of reducing agent is 0.75~0.9mol/L, the concentration of stabilizer is 0.002~0.0035mol/L, the concentration of methanesulfonic acid is 0.075~0.1mol/L, B The diol concentration is 10-15ml/L, heated to 80°C and stirred until the solution is completely dissolved to obtain solution A; (2)、称取适量铜粉,所述铜粉粒径为微纳米级,是从纳米铜粉到50微米以下的微米铜粉;清洗去除表面污渍以及氧化层,并活化铜球表面,再用去离子水清洗,采用将铜粉按照质量比1:10置于盐酸-乙醇溶液中,所述盐酸-乙醇溶液为体积比5%的盐酸-乙醇溶液,加入表面活化剂并对铜粉进行施加超声,再用去离子水清洗铜粉4遍待用,所述表面活化剂为聚乙二醇,聚乙二醇:乙醇质量比=1:100,待用;(2), take by weighing an appropriate amount of copper powder, the particle size of the copper powder is micro-nano level, from nano-copper powder to micron copper powder below 50 microns; clean and remove surface stains and oxide layers, and activate the copper ball surface, and then Clean with deionized water, adopt copper powder to be placed in hydrochloric acid-ethanol solution according to mass ratio 1:10, described hydrochloric acid-ethanol solution is the hydrochloric acid-ethanol solution of volume ratio 5%, add surfactant and carry out to copper powder Apply ultrasound, then clean the copper powder with deionized water 4 times for use, the surfactant is polyethylene glycol, polyethylene glycol: ethanol mass ratio = 1:100, for use; (3)、称取适量氯化亚锡并溶于盐酸中,作为溶液B;(3), take appropriate amount of stannous chloride and be dissolved in hydrochloric acid, as solution B; (4)、在80℃下将溶液B倒入处于搅拌中的溶液A中,待混合均匀后调整镀液温度到28~35℃,pH值到0.8~1,在此期间溶液一直处于搅拌状态;(4) Pour solution B into solution A under stirring at 80°C, adjust the temperature of the plating solution to 28-35°C after mixing evenly, and adjust the pH value to 0.8-1, during which the solution has been in a stirring state ; (5)、将步骤(2)处理得到铜粉倒入A和B的混合溶液中,提高搅拌速率,电磁搅拌与玻璃棒手工搅拌交替进行,保证反应3h;(5), the copper powder that step (2) is processed is poured in the mixed solution of A and B, increases stirring speed, and electromagnetic stirring and glass rod manual stirring are carried out alternately, guarantees reaction 3h; (6)、过滤镀液并清洗金属粉,得到表面镀附有厚锡层的基于Cu@Sn核-壳结构双金属粉。(6), filtering the plating solution and cleaning the metal powder to obtain a Cu@Sn core-shell structure based bimetallic powder with a thick tin layer on the surface. 2.根据权利要求1所述的一种微纳米铜球表面镀附具有可焊性厚度的厚锡层的镀附方法,其特征在于,所述步骤(3)中称取1.8~2.5g氯化亚锡并溶于1ml盐酸中,作为溶液B。2. a kind of micronano copper ball surface plating according to claim 1 has the plating method of the thick tin layer of weldability thickness, it is characterized in that, in described step (3), take by weighing 1.8~2.5g chlorine Stannous and dissolved in 1ml of hydrochloric acid, as solution B. 3.根据权利要求1所述的一种微纳米铜球表面镀附具有可焊性厚度的厚锡层的镀附方法,其特征在于,所述步骤(5)中所述两种溶液混合后提高的搅拌速率为300rpm。3. a kind of micronano copper ball surface plating method according to claim 1 has the thick tin layer of solderability thickness, it is characterized in that, after the two kinds of solutions described in the described step (5) are mixed The increased stirring rate was 300 rpm. 4.根据权利要求1所述的一种微纳米铜球表面镀附具有可焊性厚度的厚锡层的镀附方法,其特征在于,4. a kind of micronano copper ball surface plating according to claim 1 has the plating method of the thick tin layer of weldability thickness, it is characterized in that, (1)、称取次亚磷酸钠0.86mol/L,硫脲1.3mol/L,对苯二酚0.0036mol/L,乙二胺四乙酸0.0028mol/L溶于50ml去离子水,加入甲磺酸0.083mol/L,乙二醇15ml/L水浴加热到80℃,施加电磁搅拌,搅拌速度为100rpm,待溶质完全溶解得到溶液A;(1), Weigh 0.86mol/L of sodium hypophosphite, 1.3mol/L of thiourea, 0.0036mol/L of hydroquinone, and 0.0028mol/L of ethylenediaminetetraacetic acid, dissolve them in 50ml of deionized water, add methanesulfonate Acid 0.083mol/L, ethylene glycol 15ml/L, heated in a water bath to 80°C, applying electromagnetic stirring at a stirring speed of 100rpm, until the solute is completely dissolved to obtain solution A; (2)、称取铜粉4g,置于5%的盐酸-乙醇溶液中酸洗,同时加入表面活化剂聚乙二醇10g/L并对铜粉进行超声清洗去除表面污渍以及氧化层同时活化铜球表面,最后用去离子水清洗铜粉4遍待用;(2), weigh 4g of copper powder, place it in 5% hydrochloric acid-ethanol solution for pickling, add surfactant polyethylene glycol 10g/L at the same time, and carry out ultrasonic cleaning to copper powder to remove surface stains and activate the oxide layer at the same time On the surface of the copper ball, wash the copper powder 4 times with deionized water for later use; (3)、称取2g氯化亚锡并溶于1mL纯盐酸中,作为溶液B;(3), take by weighing 2g stannous chloride and be dissolved in 1mL pure hydrochloric acid, as solution B; (4)、将80℃溶液B倒入处于搅拌中的溶液A中,调整混合溶液的温度至30℃,并且通过添加氨水和盐酸的方法调整镀液pH为0.8-1之间,整个过程中溶液一直处于以100rpm搅拌的状态;(4) Pour 80°C solution B into the stirring solution A, adjust the temperature of the mixed solution to 30°C, and adjust the pH of the plating solution to be between 0.8-1 by adding ammonia water and hydrochloric acid, during the whole process The solution has been in a state of stirring at 100rpm; (5)、30℃下将之前第二步中酸洗并表面处理好的铜粉倒入A和B的混合溶液中,同时提高电磁搅拌速率至300rpm;但是电磁搅拌的同时要穿插手工玻璃棒搅拌以保证颗粒在镀液中的状态均匀,电磁搅拌每进行20min切换到手工玻璃棒搅拌5min,循环往复保证反应时间为3h;(5) Pour the copper powder pickled and surface-treated in the previous second step into the mixed solution of A and B at 30°C, and increase the electromagnetic stirring rate to 300rpm; but the electromagnetic stirring must be interspersed with manual glass rods Stir to ensure that the state of the particles in the plating solution is uniform, and switch to the manual glass rod for 5 minutes every 20 minutes of electromagnetic stirring, and reciprocate to ensure that the reaction time is 3 hours; (6)、过滤镀液并清洗金属粉,得到表面镀附有厚锡层的基于Cu@Sn核-壳结构双金属粉。(6), filtering the plating solution and cleaning the metal powder to obtain a Cu@Sn core-shell structure based bimetallic powder with a thick tin layer on the surface.
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CN106180696B (en) * 2016-08-10 2018-10-16 哈尔滨工业大学深圳研究生院 A kind of preparation method of the high-temp solder based on Ni@Sn nucleocapsid structures
CN106433558A (en) * 2016-09-26 2017-02-22 麦科勒(滁州)新材料科技有限公司 Bonding agent for electronic packaging and preparing method thereof
JP6897237B2 (en) * 2017-03-31 2021-06-30 三菱マテリアル株式会社 Molded body for joining and its manufacturing method
JP6897236B2 (en) * 2017-03-31 2021-06-30 三菱マテリアル株式会社 Molded body for joining and its manufacturing method
CN107914009B (en) * 2017-12-15 2019-11-19 宁波广新纳米材料有限公司 A kind of production method of tin plating copper powder
CN114043122B (en) * 2021-11-02 2023-02-24 哈尔滨工业大学(深圳) High-temperature brazing filler metal containing Cu @ Sn core-shell bimetallic powder and preparation method and application thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104117782A (en) * 2014-08-11 2014-10-29 哈尔滨工业大学深圳研究生院 Novel prefabricated piece high-temperature brazing filler metal and preparation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547259B2 (en) * 1973-12-14 1979-04-05
CN1219439C (en) * 2003-11-03 2005-09-21 上海维来新材料科技有限公司 Nano hud-type bimetal powder of copper and stannum, preparing method and application
CN101724834B (en) * 2009-12-14 2011-11-09 昆明理工大学 Continuously self-catalyzed deposition chemical plating solution of tin and using method thereof
CN102554219B (en) * 2012-01-31 2014-03-26 云南云天化股份有限公司 Nanoparticle of copper-tin nuclear shell structure and preparation method for nanoparticle

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104117782A (en) * 2014-08-11 2014-10-29 哈尔滨工业大学深圳研究生院 Novel prefabricated piece high-temperature brazing filler metal and preparation method thereof

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