CN105281426A - Power supply circuit for modified-Siemens-process polycrystalline silicon production device - Google Patents
Power supply circuit for modified-Siemens-process polycrystalline silicon production device Download PDFInfo
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- CN105281426A CN105281426A CN201510852152.9A CN201510852152A CN105281426A CN 105281426 A CN105281426 A CN 105281426A CN 201510852152 A CN201510852152 A CN 201510852152A CN 105281426 A CN105281426 A CN 105281426A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title abstract description 7
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 230000009467 reduction Effects 0.000 claims description 42
- 229920005591 polysilicon Polymers 0.000 claims description 36
- 238000009413 insulation Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 12
- 238000001514 detection method Methods 0.000 description 10
- 101150112300 HVG1 gene Proteins 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 208000033999 Device damage Diseases 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
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Abstract
Provided is a power supply circuit for a modified-Siemens-process polycrystalline silicon production device. The power supply circuit comprises a plurality of reducing furnaces, a power supply system formed by N starting power supplies, and K standby starting power supplies. The N starting power supplies and the K standby starting power supplies are connected with a three-phase power transmission circuit at the same time. An output terminal of the power supply system is connected with the plurality of reducing furnaces. Each of the K standby starting power supplies is connected with the output terminal of the power supply system via a phase selector. When any of the N starting power supplies fails, the output phase of any of the standby starting power supplies is adjusted via the phase selector so as to be matched with the output phase of the failed starting power supply which is therefore replaced. In the invention, through the arrangement of the standby starting power supplies, the standby power supplies are used to start the reducing furnaces when the primary power supplies fail, thereby improving the device running stability and increasing the production efficiency and the production capacity as well.
Description
Technical field
The present invention relates to field of polysilicon production, particularly a kind of improved Siemens production of polysilicon device power supply (DPS) circuit.
Background technology
In photovoltaic, electronics, microelectronic industry, polysilicon is its main raw material(s).Polysilicon take metallic silicon as raw material, through the HIGH-PURITY SILICON that a series of physics, chemical reaction are purified.Because improvement Siemens process can the production of compatible electronic level and solar-grade polysilicon, with its technology maturation, be applicable to the features such as industrialization production, be the first-selected technique that current production of polysilicon generally adopts, this production technology needs large power supply heated constant temperature to control polycrystalline silicon rod.
Polysilicon is equivalent to the very large load group of impedance variation in whole production process, voltage range is changed to 10V/m from 2000V/m, current range is from 0 ~ 3000A, whole process voltage, curent change scope are large, high requirement is proposed to electrical system coupling, be divided into double diffusion at present, 2000V/m ~ 100V/m voltage high current is less, by high-voltage power apparatus process; The relative low current of 200V/m ~ 10V/m voltage is comparatively large, by the process of mesolow supply unit.Therefore, in the stage in the early stage, when namely voltage high current is less, load access starts power supply.
Startup power supply is a kind of common apparatus in improved Siemens polysilicon production process, it start compared with old-fashioned filament radiation appliance fast, easy to control, pollute little, at home in improved Siemens polysilicon production process, be all that a set of startup power supply drives some reduction furnaces to start usually.And this Starting mode is owing to being singly start power supply, makes to cause reduction furnace cannot start work when startup power supply damages, therefore there is higher failure rate, equipment dependability is low, thus affect production efficiency, affect production capacity.
Summary of the invention
In order to overcome the above-mentioned shortcoming of prior art, the invention provides a kind of failure rate is low, reliability is high, improved Siemens production of polysilicon device power supply (DPS) circuit that production efficiency is high.
In order to realize foregoing invention object, the technical solution used in the present invention is:
A kind of improved Siemens production of polysilicon device power supply (DPS) circuit, comprise some reduction furnaces, N platform start power supply composition power-supply system and K platform startup power supply for subsequent use, wherein, described N platform startup power supply and described K platform startup power supply for subsequent use are connected with three-phase power transmission circuit simultaneously;
The output of described power-supply system is connected with described some reduction furnaces, each in described K platform startup power supply for subsequent use is connected with the output of power-supply system respectively by phase selector, when described N platform starts arbitrary damage in power supply, in startup power supply for subsequent use, arbitrary adjusts its startup power supply exporting phase place and damage by phase selector and exports phase place and match, to replace the startup power supply damaged, wherein, N, K are positive integer.
Further, described startup power supply comprises controllable type device, step-up transformer, and described controllable type device connects described step-up transformer.
Further, described controllable type device is thyristor or IGBT.
Further, described step-up transformer is unidirectional transformer.
Further, also comprise dispense switch, each in described some reduction furnaces is connected with power-supply system respectively by dispense switch, when any one reduction furnace starts, described dispense switch is switched to the reduction furnace of this startup, and itself and power system circuit are connected.
Further, also comprise current sensing device, described current sensing device one end ground connection, whether any one electrode that the other end and described reduction furnace are drawn is connected to form loop, be destroyed for the electric insulation detecting reduction furnace.
Further, described current sensing device is current transformer.
compared with prior art, beneficial effect of the present invention
1, a kind of improved Siemens production of polysilicon device power supply (DPS) circuit of the present invention is by arranging startup power supply for subsequent use, use stand-by power supply to start reduction furnace when primary power cource damages, improve equipment reliability of operation, thus improve production efficiency, add production capacity.
2, a kind of improved Siemens production of polysilicon device power supply (DPS) circuit of the present invention is by arranging startup power supply for subsequent use, when detecting startup by increasing current sensing device, whether reduction furnace electric insulation is normal, avoid the device damage caused due to reduction furnace insulation breakdown, the even fire that causes of short circuit, the generation of the perils such as electric shock.
Accompanying drawing explanation
It is a kind of improved Siemens production of polysilicon device power supply (DPS) schematic block circuit diagram of a specific embodiment of the present invention shown in Fig. 1.
It is a kind of improved Siemens production of polysilicon equipment N+1 main power supply circuit diagram of a specific embodiment of the present invention shown in Fig. 2.
It is a kind of improved Siemens production of polysilicon equipment 4+1 main power supply circuit diagram of a specific embodiment of the present invention shown in Fig. 3.
It is a kind of improved Siemens production of polysilicon device power supply (DPS) schematic block circuit diagram with earthing detection of a specific embodiment of the present invention shown in Fig. 4.
That a kind of improved Siemens production of polysilicon device start loop earth current with earthing detection of a specific embodiment of the present invention flows to schematic diagram shown in Fig. 5.
That a kind of improved Siemens production of polysilicon device start loop earth current with earthing detection of a specific embodiment of the present invention flows to schematic diagram shown in Fig. 6.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail.But this should be interpreted as that the scope of the above-mentioned theme of the present invention is only limitted to following embodiment, all technology realized based on content of the present invention all belong to scope of the present invention.
Embodiment 1:
It is a kind of improved Siemens production of polysilicon device power supply (DPS) schematic block circuit diagram of a specific embodiment of the present invention shown in Fig. 1, comprise some reduction furnaces, N platform start power supply composition power-supply system and K platform startup power supply for subsequent use, wherein, described N platform startup power supply and described K platform startup power supply for subsequent use are connected with three-phase power transmission circuit simultaneously;
The output of described power-supply system is connected with described some reduction furnaces, each in described K platform startup power supply for subsequent use is connected with the output of power-supply system respectively by phase selector, when described N platform starts arbitrary damage in power supply, in startup power supply for subsequent use, arbitrary adjusts its startup power supply exporting phase place and damage by phase selector and exports phase place and match, to replace the startup power supply damaged, wherein, N, K are positive integer.
Further, described startup power supply comprises controllable type device, step-up transformer, and described controllable type device connects described step-up transformer.
Further, described controllable type device is thyristor or IGBT.
Further, described step-up transformer is unidirectional transformer.
Further, also comprise dispense switch, each in described some reduction furnaces is connected with power-supply system respectively by dispense switch, when any one reduction furnace starts, described dispense switch is switched to the reduction furnace of this startup, and itself and power system circuit are connected.
Concrete, referring to Fig. 2, Fig. 2 is a kind of improved Siemens production of polysilicon equipment N+1 main power supply circuit diagram of a specific embodiment of the present invention, HVG1 ~ n is for starting power supply, startup power supply is by controllable devices D (can be contactor, thyristor, IGBT etc.) and step-up transformer T forms, and (in figure, T input and output illustrate only a voltage tap but are not limited thereto, can be the random number of more than 1, an each or independent input voltage tap one group of controllable devices).
ABC is three-phase input power, and HVG1 input meets AB, and HVG2 input meets BC, HVG3 input meets CA, and HVG4 input meets AB ..., a kind of connection of an example in figure, can be HVG1, HVGn phase 180 ° in physical cabling, HVG2, HVGn-1 phase 180 ° ... any connection.
Output HVG1A2 and the HVG2A1 starting power supply is connected, HVG2A2 and HVG3A1 is connected, HVG3A2 and HVG4A1 is connected ... HVGn-1A2 and HVGnA1 is connected, and finally forms HV.1, HV.2, HV.3, HV.4 ... HV.n+1 bus-bar system, bus-bar system is the output of power-supply system, and bus-bar system is connected to each reduction furnace by each reduction furnace dispense switch, when the n-th reduction furnace needs to start, the reduction furnace dispense switch (n# stove switch) that closed pair is answered.
General, the corresponding dispense switch of each reduction furnace, bus-bar system is connected to each dispense switch one end, and each contact in each dispense switch of the other end is connected with a reduction furnace respectively, switches to control which reduction furnace of its current direction by dispense switch.
Startup power supply for subsequent use forms (following-Q1 ,-Q2, Q3 by starting power supply HVGn+1 and phase selector XZG; the connected mode of-Q11 ~-Qn is not limited to this mode of connection; as long as utilize commutation principle, and the connection of object that can reach conversion phase place is all within protection scope of the present invention.
A kind of improved Siemens production of polysilicon device power supply (DPS) circuit of the present invention is by arranging startup power supply for subsequent use, use stand-by power supply to start reduction furnace when primary power cource damages, improve equipment reliability of operation, thus improve production efficiency, add production capacity.
Embodiment 2:
In order to circuit specific works principle of the present invention is better described, Fig. 3 gives the circuit connection diagram of 4+1 active-standby switch mode, and the connected mode of its connected mode and n+1 master and stand-by circuits of the present invention is similar, does not repeat them here.
Concrete, referring to Fig. 3, when HVG1 breaks down, back-up system starts phase selector XZG, and-Q1 ,-Q11 connect, and HVG5 input and output phase place is consistent with HVG1, replaces HVG1 completely;
When HVG2 breaks down, back-up system starts phase selector XZG, and-Q2-Q12 connects, and HVG5 input and output phase place is consistent with HVG2, replaces HVG2 completely;
When HVG3 breaks down, back-up system starts phase selector XZG, and-Q2-Q13 connects, and HVG5 input and output phase place is consistent with HVG3, replaces HVG3 completely;
When HVG4 breaks down, back-up system starts phase selector XZG, and-Q1-Q14 connects, and HVG5 input and output phase place is consistent with HVG4, replaces HVG4 completely.
Embodiment 3:
It is a kind of improved Siemens production of polysilicon device power supply (DPS) schematic block circuit diagram with earthing detection of a specific embodiment of the present invention shown in Fig. 4; improved Siemens production of polysilicon device power supply (DPS) circuit in the present embodiment comprises the content in embodiment 1 or 2; its difference is only: electrode for reduction furnace L and H is connected together; and connect protective earthing; whether current sensing device PT, between two pole tie points and protective earthing, is destroyed for the electric insulation detecting reduction furnace.
Further, also comprise current sensing device, described current sensing device one end ground connection, whether any one electrode that the other end and described reduction furnace are drawn is connected to form loop, be destroyed for the electric insulation detecting reduction furnace.
Further, described current sensing device is current transformer.
In order to circuit specific works principle of the present invention is better described, that a kind of improved Siemens production of polysilicon device start loop earth current with earthing detection of a specific embodiment of the present invention flows to schematic diagram shown in Fig. 5, in the present embodiment, PT is current sensing device, H, I, J, K, L is the electrode that reduction furnace often pair silicon rod is drawn, R1, R2, R3, R4, for equivalent reduction furnace silicon rod, improved Siemens polysilicon producing and reducing furnace is operated in high-temperature high-pressure state, electric insulation is destroyed to happen occasionally, because later stage operating mode voltage is lower, not easily be found, when reduction furnace carries out high voltage startup, because voltage is high, easily there is the security incident due to insulation breakdown initiation, detect if do not carried out and control very easily to cause startup power supply to damage, time serious, short circuit can cause fire, start power supply outfit earthing detection essential.
In Fig. 5, because reduction body of heater is well connected with protective earthing, protective earthing line resistance is little, and line drop is little, and when human contact is to body of heater, body voltages is exactly line drop, when body of heater electric insulation is destroyed, does not have electric shock accidents and occurs; Because protective earthing line resistance is little, I (electric current)=U(voltage)/R(resistance) electric current is very large, very easily causes equipment and protective earthing circuit to damage if immediately do not shut down; Therefore, guaranteeing to reduce that body of heater and grounding system be well connected is unique guarantee of electrical safety.
That a kind of improved Siemens production of polysilicon device start loop earth current with earthing detection of a specific embodiment of the present invention flows to schematic diagram in Fig. 6, when in R1/2:K(figure, circuit K point is beaten × located) insulation damages time, because A1 and A5 links together, there is the path of the mutual redundancy of two-way in earthing detection loop.Current circuit 1, T1:A2 earth current is by body of heater, by grounding system, got back to T1:A1 by PT, and systems axiol-ogy, to earth current, does control and protection immediately; Current circuit 2, T2:A2 earth current is by body of heater, by grounding system, by PT, by the secondary coil of T3T4, got back to T2:A3, and systems axiol-ogy, to earth current, does control and protection immediately;
During R2/3:J insulation damages, because A1 and A5 links together, there is the path of the mutual redundancy of two-way in earthing detection loop.Current circuit 1, T2:A3 earth current is by body of heater, by grounding system, by PT, by the secondary coil of T1, got back to T2:A2, and systems axiol-ogy, to earth current, does control and protection immediately; Current circuit 2, T3:A3 earth current is by body of heater, by grounding system, by PT, by the secondary coil of T4, got back to T3:A4, and systems axiol-ogy, to earth current, does control and protection immediately;
During R3/4:I insulation damages, because A1 and A5 links together, there is the path of the mutual redundancy of two-way in earthing detection loop.Current circuit 1, T3:A4 earth current is by body of heater, by grounding system, by PT, by the secondary coil of T1T2, got back to T3:A3, and systems axiol-ogy, to earth current, does control and protection immediately; Current circuit 2, T4:A4 earth current is by body of heater, by grounding system, by PT, got back to T4:A5, and systems axiol-ogy, to earth current, does control and protection immediately.
A kind of improved Siemens production of polysilicon device power supply (DPS) circuit of the present invention is by arranging startup power supply for subsequent use, when detecting startup by increasing current sensing device, whether reduction furnace grounding system is normal, avoid the device damage caused due to reduction furnace insulation breakdown, the even fire that causes of short circuit, the generation of the perils such as electric shock.
By reference to the accompanying drawings the specific embodiment of the present invention is described in detail above, but the present invention is not restricted to above-mentioned execution mode, in the spirit and scope situation of claim not departing from the application, those skilled in the art can make various amendment or remodeling.
Claims (7)
1. an improved Siemens production of polysilicon device power supply (DPS) circuit, it is characterized in that, comprise some reduction furnaces, N platform start power supply composition power-supply system and K platform startup power supply for subsequent use, wherein, described N platform startup power supply and described K platform startup power supply for subsequent use are connected with three-phase power transmission circuit simultaneously;
The output of described power-supply system is connected with described some reduction furnaces, each in described K platform startup power supply for subsequent use is connected with the output of power-supply system respectively by phase selector, when described N platform starts arbitrary damage in power supply, in startup power supply for subsequent use, arbitrary adjusts its startup power supply exporting phase place and damage by phase selector and exports phase place and match, to replace the startup power supply damaged, wherein, N, K are positive integer.
2. a kind of improved Siemens production of polysilicon device power supply (DPS) circuit according to claim 1, it is characterized in that, described startup power supply comprises controllable type device, step-up transformer, and described controllable type device connects described step-up transformer.
3. a kind of improved Siemens production of polysilicon device power supply (DPS) circuit according to claim 2, it is characterized in that, described controllable type device is thyristor or IGBT.
4. a kind of improved Siemens production of polysilicon device power supply (DPS) circuit according to claim 2, it is characterized in that, described step-up transformer is unidirectional transformer.
5. a kind of improved Siemens production of polysilicon device power supply (DPS) circuit according to claim 1, it is characterized in that, also comprise dispense switch, each in described some reduction furnaces is connected with power-supply system respectively by dispense switch, when any one reduction furnace starts, described dispense switch is switched to the reduction furnace of this startup, and itself and power system circuit are connected.
6. a kind of improved Siemens production of polysilicon device power supply (DPS) circuit according to any one of claim 1-5, it is characterized in that, also comprise current sensing device, described current sensing device one end ground connection, whether any one electrode that the other end and described reduction furnace are drawn is connected to form loop, be destroyed for the electric insulation detecting reduction furnace.
7. a kind of improved Siemens production of polysilicon device power supply (DPS) circuit according to claim 6, it is characterized in that, described current sensing device is current transformer.
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| CN201510852152.9A CN105281426B (en) | 2015-11-30 | 2015-11-30 | A kind of improved Siemens production of polysilicon equipment power circuit |
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| CN201510852152.9A CN105281426B (en) | 2015-11-30 | 2015-11-30 | A kind of improved Siemens production of polysilicon equipment power circuit |
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| CN105281426B CN105281426B (en) | 2018-07-31 |
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| CN109298744B (en) * | 2018-09-26 | 2020-04-21 | 四川英杰电气股份有限公司 | Method and device for controlling reduction power supply based on voltage limitation and current lamination limitation |
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| US20130285448A1 (en) * | 2010-12-24 | 2013-10-31 | Nec Corporation | Power control system and power control method therefor, and power gateway apparatus and power control method therefor |
| CN104129788A (en) * | 2014-08-11 | 2014-11-05 | 重庆大全泰来电气有限公司 | System for starting polycrystalline silicon reduction furnace |
| CN204316172U (en) * | 2014-11-27 | 2015-05-06 | 国家电网公司 | Compact power switching device shifter |
| CN204310823U (en) * | 2014-12-11 | 2015-05-06 | 新特能源股份有限公司 | A kind of 72 to excellent polycrystalline silicon reducing furnace power supply system |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130285448A1 (en) * | 2010-12-24 | 2013-10-31 | Nec Corporation | Power control system and power control method therefor, and power gateway apparatus and power control method therefor |
| CN104129788A (en) * | 2014-08-11 | 2014-11-05 | 重庆大全泰来电气有限公司 | System for starting polycrystalline silicon reduction furnace |
| CN204316172U (en) * | 2014-11-27 | 2015-05-06 | 国家电网公司 | Compact power switching device shifter |
| CN204310823U (en) * | 2014-12-11 | 2015-05-06 | 新特能源股份有限公司 | A kind of 72 to excellent polycrystalline silicon reducing furnace power supply system |
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