CN105276383B

CN105276383B - Semiconductor lighting device

Info

Publication number: CN105276383B
Application number: CN201510721288.6A
Authority: CN
Inventors: 罗毅; 韩彦军
Original assignee: Tsinghua University
Current assignee: Tsinghua University
Priority date: 2015-10-23
Filing date: 2015-10-30
Publication date: 2021-04-20
Anticipated expiration: 2035-10-30
Also published as: CN105276383A

Abstract

The present invention provides a semiconductor lighting device, comprising: a housing structure and an LED light source, the LED light source is fixed on the housing structure, the housing structure includes a reflective surface, and the reflective surface is a Lambertian-like reflective surface , the light-emitting direction of the LED light source points to at least a part of the reflective surface, the LED light source forms a fully or partially uniform illuminance distribution on the reflective surface, and faces a half-space solid angle through the Lambertian-like reflection Reflection for a lighting effect that glows softly, with uniform overall or local brightness. The semiconductor lighting device provided by the invention has soft light emission, uniform brightness in whole or in part, and good lighting effect.

Description

Semiconductor lighting device

Technical Field

The present invention relates to a semiconductor lighting device.

Background

Because Light Emitting Diodes (LEDs) have the unique advantages of high Light Emitting efficiency, long life, environmental protection, good weather resistance, etc., they are a core component that promotes the rapid development of electronic information technology after Integrated Circuits (ICs), and the LED industry has become the backbone industry of national economy in our country. With the continuous improvement of the performance of the LED, the application field thereof is also rapidly expanding, wherein the most important is semiconductor illumination and LED display. The development of semiconductor lighting and LED display technology has important significance in saving energy, protecting environment, improving the quality of life of people and enhancing the sustainable development capability of China. Meanwhile, the semiconductor lighting and LED display industry has a significant role in promoting informatization construction, promoting the traditional lighting and display industry, and pulling industries of circuit, packaging, material, equipment manufacturing, and the like.

The LED is expected to enter the field of indoor lighting, and what is needed to be achieved is that the LED is not inferior to the conventional lighting source in lighting effects such as light-emitting softness and brightness distribution. Indoor lighting sources with high luminous flux, such as ceiling lamps and tube lamps, which are soft in light emission and uniform in overall or local brightness, are widely regarded due to huge market demands. However, the high efficiency white LED is not equivalent to a semiconductor lighting device excellent in lighting effect. The biggest obstacle of applying the conventional packaged white light LED products to the field of indoor lighting is that the LED chip has a large luminous flux per unit area (several orders of magnitude larger than that of the conventional lighting source), and can cause severe glare. In an indoor lighting environment, compared with a lighting lamp composed of a traditional fluorescent lamp and an energy-saving lamp as light sources, the conventional packaging white light LED has the advantages that the light emitting characteristic is not friendly to human eyes, and the lighting effect is not good.

In order to solve the glare problem of the conventional packaged white LED in the field of indoor lighting, the following two methods are generally adopted at present: firstly, a light-diffusing plate is additionally arranged on a light emergent surface of a packaged LED, for example, the method is commonly adopted in LED lamp tubes, LED ceiling lamps, LED bulb lamps and the like which are commonly used in the industry; secondly, a light guide plate is additionally arranged on a light emergent surface of the packaged LED, for example, the method is commonly adopted in the industry of large-size LED ceiling lamps and the like. Both of these approaches alleviate glare of packaged white LEDs to some extent, but multiple interface reflections/refractions and absorption of light by various materials lose much of the light energy. Compared with the conventional packaged white light LED, the luminous efficiency of the semiconductor lighting device manufactured by adopting the two methods is seriously reduced, the light emission is still not soft enough, the whole or local brightness uniformity is not good, and the semiconductor lighting device is difficult to compete with the traditional lighting source in the aspect of lighting effect.

Therefore, the semiconductor lighting device still has the problems of insufficient softness of light emission, insufficient uniformity of brightness and the like, and the LED has high price and no advantages in the aspect of color consistency, so that the LED is difficult to popularize and apply in the field of indoor lighting.

Disclosure of Invention

In view of the above, it is necessary to provide a semiconductor lighting device with soft light emission and uniform brightness.

A semiconductor lighting device comprising: the LED light source is fixed on the shell structure, the shell structure comprises a reflecting surface, the reflecting surface is a lambertian-like reflecting surface, the light emitting direction of the LED light source points to at least one part of the reflecting surface, the LED light source forms overall or local uniform illumination distribution on the reflecting surface, and the LED light source reflects towards a half-space solid angle through the lambertian-like reflecting surface to obtain the illumination effect of soft light emission and overall or local uniform brightness.

The shape of the shell structure includes but is not limited to a flat plate shape, a semi-sphere shell shape and a semi-ellipse shell shape; or the cross section is in a shape of a trapezoid, square, semicircular or semi-elliptic strip-shaped groove; alternatively, a flat-topped polygon; or a curved surface designed using a non-imaging method.

The shell structure comprises a reflection unit and a fixing unit which are connected with each other, the reflection unit is a main body part of the shell structure, and the fixing unit is formed by extending the main body part of the shell structure from the edge to the central direction of the reflection surface or is formed by extending the main body part of the shell structure from a central point to a direction far away from the central point.

The whole surface of the side of the reflecting unit facing the LED light source is the lambertian reflecting surface, and the lambertian reflecting surface includes but is not limited to a plane, a spherical surface, an ellipsoid, a part of a curved surface designed by a non-imaging method, or a combination thereof.

The orthographic projection of the lambertian-like reflecting surface on a plane includes but is not limited to a circle, an ellipse, a square or a rectangle.

The LED light source includes, but is not limited to, a concentrated distribution or a dispersed distribution; the LED light sources are distributed in a peripheral or central region including, but not limited to, the lambertian-like reflecting surface.

The material forming the lambertian reflecting surface includes, but is not limited to, high-reflectivity metal materials such as aluminum and silver, dielectric materials, ceramic materials, plastic materials, or materials formed by compounding the above materials.

The method for forming the lambertian-like reflection characteristic of the reflecting surface includes, but is not limited to, forming a microstructure on the surface of the reflecting material by using an injection molding process or a photoetching process, and filling the inside of the reflecting material with a material for forming the lambertian-like reflection characteristic.

The semiconductor lighting device further comprises a transparent protective cover, a driving and controlling power supply, a wire and a radiator, wherein the transparent protective cover and the shell structure are mutually buckled to form a hollow space, the driving and controlling power supply, the wire and the radiator are buried in the shell structure or attached to the outside of the shell structure, the LED light source and the driving and controlling power supply are electrically connected through the wire, the driving and controlling power supply provides electric energy for the LED light source and controls the working mode of the LED light source, and the radiator is in close contact with the shell structure and used for reducing the junction temperature of the LED light source.

The light emitting wavelength of the LED light source includes, but is not limited to, red light, green light, blue light, and white light.

Compared with the prior art, the lambertian-like reflecting surface of the semiconductor lighting device receives primary light energy emitted by the LED light source, and reflects the primary light energy to a half-space solid angle in a lambertian-like manner, so that the lighting effect of soft light emission and uniform overall or local brightness is obtained; the LED light source provides primary light energy to the whole reflecting surface, light rays emitted from the LED light source are only reflected by the reflecting surface similar to a Lambert shape and can be emitted through the transparent protective cover, and most light rays do not need to be reflected or refracted for multiple times, so that the whole light efficiency of the semiconductor lighting device is high.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor lighting device according to an embodiment of the present invention.

Fig. 2 is a schematic structural diagram of a semiconductor lighting device provided in embodiment 1 of the present invention.

Fig. 3 is a schematic structural diagram of a semiconductor lighting device according to embodiment 2 of the present invention.

Fig. 4 is a schematic structural diagram of a semiconductor lighting device according to embodiment 3 of the present invention.

Fig. 5 is a schematic structural diagram of a semiconductor lighting device according to embodiment 4 of the present invention.

Fig. 6 is a schematic structural diagram of a semiconductor lighting device according to embodiment 5 of the present invention.

Fig. 7 is a schematic structural diagram of a semiconductor lighting device according to embodiment 6 of the present invention.

Fig. 8 is a schematic structural diagram of a semiconductor lighting device provided in embodiment 7 of the present invention.

Fig. 9 is a schematic structural diagram of a semiconductor lighting device according to embodiment 8 of the present invention.

Description of the main elements

Semiconductor lighting device	1
		Shell structure	10
Reflection unit and reflection plate	11
		Transparent protective cover	12
LED light source	13
		Fixing unit	15
Reflecting surface	111
		Driving and control power supply	14
Conducting wire	17
		Heat radiator	16

The following detailed description will further illustrate the invention in conjunction with the above-described figures.

Detailed Description

The same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout the drawings of the embodiments and examples of the present invention. The embodiments described below with reference to the drawings are illustrative only and should not be construed as limiting the invention.

In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.

Detailed description of the preferred embodiments

Referring to fig. 1, a semiconductor lighting device 1 according to an embodiment of the present invention includes: the LED light source comprises a shell structure 10, a transparent protective cover 12 and an LED light source 13, wherein the shell structure 10 and the transparent protective cover 12 are opposite and mutually buckled to form a hollow space (not shown). The LED light source 13 is disposed on the housing structure 10 in the hollow space.

The housing structure 10 includes a reflection unit 11 and a fixing unit 15, and the reflection unit 11 and the fixing unit 15 are connected in series to form the integral housing structure 10, or may be formed by connecting two different components of the reflection unit 11 and the fixing unit 15 to each other. The reflecting unit 11 has a reflecting surface 111 facing the hollow space, and the reflecting surface 111 is a lambertian-like reflecting surface. The LED light source 13 is disposed on the fixing unit 15. The light exit surface of the LED light source 13 is directed to the reflection surface 111. Therefore, the light emitted from the LED light source 13 is directed to the reflecting surface 111 or a part thereof. The distribution mode of the LED light sources 13 includes, but is not limited to, a concentrated distribution or a dispersed distribution; the LED light sources 13 are arranged at positions including, but not limited to, the periphery or the central area of the reflecting surface 111.

The lambertian-like reflecting surface in the present embodiment refers to a characteristic that a lambertian-like functional relationship exists between the intensity of reflected light generated when light enters the reflecting surface and the normal line at the point of the reflected light and the reflecting surface, and the characteristic may be a strict lambertian distribution or a distribution deviating from the strict lambertian distribution, but is not specular reflection. When any one of the light rays emitted from the LED light source 13 is incident on the reflection surface of the lambertian-like type, the reflected light can be generated in a solid angle of almost half space (a phenomenon that is confined by a plane in one direction and extends infinitely in other directions is half space). In this case, a viewer at any location will perceive light reflected from all or part of the reflecting surface, rather than light reflected at one or more points.

The shell structure 10 includes but is not limited to a flat plate, a semi-spherical shell body, and a semi-elliptical shell body; or a strip-shaped groove body with the cross section of trapezoid, square, semicircle or semiellipse; or, a flat-topped polygon. The orthographic projection of the housing structure 10 on a plane includes, but is not limited to, circular, oval, square, or rectangular.

The housing structure 10 is directly made of a reflective material including, but not limited to, a high-reflectivity metal material such as aluminum, silver, etc., a dielectric material, a ceramic material, a plastic material, or a composite of the above materials, the reflective unit 11 is a part of the housing structure 10, and then a microstructure is formed on at least a part of the surface of the housing structure 10 by a photolithography and etching process directly on the surface of the reflective unit 11 to realize the lambertian-like reflective characteristic of the reflective surface 111, or a material capable of forming the lambertian-like reflective characteristic is further filled inside the microstructure to realize the lambertian-like reflective characteristic. Alternatively, the reflecting unit 11 may be filled with a material or the like capable of forming a lambertian-like reflecting characteristic to realize the lambertian-like reflecting characteristic of the reflecting surface 111.

Because the inner side surface of the shell structure 10 is the reflection surface 111, or the inner side surface of the shell structure 10 is separately provided with a layer of reflection material to form the reflection surface 111, the shape of the reflection surface 111 is the same as that of the shell structure 10, or different from that of the reflection surface 111. The reflective surface 111 includes, but is not limited to, a flat surface, a spherical surface, an ellipsoid surface, a portion of a curved surface designed using a non-imaging method, or a combination thereof. The orthographic projection of the reflecting surface 111 on the horizontal plane is circular, triangular, rectangular, oblong or other polygonal shape.

In the present embodiment, the material forming the lambertian-like reflecting surface includes, but is not limited to, a high-reflectivity metal material such as aluminum and silver, a dielectric material, a ceramic material, a plastic material, or a composite material of the above materials. The method for making the reflecting surface 111 have the lambertian-like reflecting characteristic includes, but is not limited to, forming a microstructure on the surface of the reflecting material by using an injection molding process or a photolithography etching process.

The LED light source 13 emits light with wavelengths including, but not limited to, red, green, blue, and white light, and the package form thereof includes, but not limited to, pin package, power package, surface mount package, chip on board package, and the package lens thereof includes, but not limited to, flat top type, straw hat type, or package lens designed by using non-imaging optical system.

The transparent shield 12 is an optional element that may or may not be selectively disposed as desired. If the transparent shield 12 is provided, it is preferable that the material thereof does not affect the luminous flux.

The meaning of the LED light source 13 disposed on the housing structure 10 in the hollow space in the present invention includes, but is not limited to, the LED light source 13 directly mounted on the housing structure 10; or indirectly mounted to the housing structure 10 by other means, etc. If the LED light source 13 is indirectly mounted on the housing structure 10, the fixing unit 15 is an optional element, and may be selectively disposed or not disposed as required.

In the present invention, by controlling the illuminance distribution generated by the LED light source 13 on the reflecting surface 111, the semiconductor lighting device 1 having uniform brightness in all or part thereof can be obtained. If it is desired to obtain a semiconductor lighting device 1 with uniform brightness throughout so that the LED light sources 13 form a light distribution with uniform illuminance on all the reflecting surfaces 111, a method may be adopted in which the light emitted from each LED generates a uniform illuminance distribution of a triangle, a rectangle, or the like on the reflecting surfaces 111 in a seamless manner without overlapping or a uniform illuminance distribution is generated by overlapping the light emitted from all the LEDs on the reflecting surfaces 111; if the semiconductor lighting device 1 with uniform local brightness is desired, the LED light sources 13 can form uniform illumination on the local part of the reflecting surface 111. In addition, the light emission of the semiconductor lighting device 1 can be made softer by enlarging the reflection surface 111, which is equivalent to enlarging a conventional packaged LED light source that easily causes glare in a non-imaging manner. In the present invention, the light emitted from the LED light source 13 can be emitted through the transparent protective cover 12 only by being reflected by the lambertian-like reflective surface 111, and most of the light does not need to be reflected or refracted for many times, so that the overall luminous efficacy of the semiconductor lighting device 1 is high. Therefore, compared with the traditional semiconductor illumination light source based on a light diffusion plate, a light guide plate or a mirror reflection surface, the semiconductor illumination light source has the advantage of high luminous efficiency, is soft in light emission, uniform in overall or local brightness, and capable of obtaining an excellent illumination effect, is an ideal choice for the field of military indoor illumination of the semiconductor illumination light source and replaces the traditional ceiling lamp, tube lamp and the like.

The structure of the semiconductor lighting device 1 according to the embodiment of the present invention is described in detail below with reference to the drawings, and the contents of the embodiments are directly used for the parts that do not change much in the following embodiments, and are not described again.

Example 1

Fig. 2 is a schematic structural diagram of a semiconductor lighting device 1 according to embodiment 1 of the present invention. The semiconductor lighting device 1 of the present embodiment includes a housing structure 10, a transparent protective cover 12, an LED light source 13, a driving and controlling power source 14, a wire 17 and a heat sink 16, wherein the housing structure 10 and the transparent protective cover 12 are opposite and mutually fastened to form a hollow space (not shown). The LED light source 13 is disposed on the housing structure 10 in the hollow space. The drive and control power supply 14, the lead 17 and the heat sink 16 are embedded in the housing structure 10. The LED light source 13 and the driving and control power supply 14 are electrically connected by a wire 17. A drive and control power supply 14 supplies power to the LED light sources 13 and controls their mode of operation. A heat sink 16 is arranged in close contact with the housing structure 10 for reducing the junction temperature of the LED light source 13.

The shell structure 10 is in a truncated cone shape with a flat top and an open bottom, and comprises a reflection unit 11 and a fixing unit 15, the reflection unit 11 and the fixing unit 15 are connected with each other, and the transparent protective cover 12 is buckled with the fixing unit 15. In this embodiment, the reflection unit 11 is formed by providing a semicircular shell-shaped reflection layer on the inner side surface of the shell structure 10. The reflecting unit 11 has a reflecting surface 111 facing the hollow space, and the reflecting surface 111 is a lambertian-like reflecting surface. The reflecting unit 11 is a semi-circular shell structure, and the fixing unit 15 is formed by extending the lower edge of the reflecting unit 11 to the hollow space. The fixing unit 15 is provided with the LED light sources 13, and the light emitting surfaces of the LED light sources 13 are arranged facing the reflecting surface 111, the number and the arrangement positions thereof are set according to the requirement, the number may be one or more, and the LED light sources 13 are distributed around the reflecting surface 111. The shape of the reflective surface 111 includes, but is not limited to, a spherical surface, an ellipsoidal surface, a portion of a curved surface designed using a non-imaging method, or a combination of these surface types.

This embodiment can form the semiconductor illumination device 1 having uniform brightness throughout. The light emitting surface of the LED light source 13 faces the reflecting surface 111. The LED light sources 13 can now be arranged in the following way: for example, the light emitted by each LED light source 13 is confined to an approximately strip-shaped area: the length of the strip-shaped area is the length of the center and the edge of the reflecting surface, the width is the distance between two adjacent LEDs, and the light rays in the area form nearly uniform illumination distribution on the reflecting surface 111, and meanwhile, the illumination formed by each LED light source 13 on the reflecting surface 111 can be connected seamlessly. Thus, a nearly uniform illuminance distribution is formed on the entire reflection surface 111. When the output light flux of the semiconductor lighting device 1 needs to be increased, the number of the LED light sources 13 can be increased without changing the output light flux of the single LED light source 13. In this case, the illuminance on the reflecting surface 111 increases. In order to eliminate the visual discomfort of human eyes, the area of the reflecting surface 111 may be increased appropriately so that the illuminance on the reflecting surface 111 remains substantially unchanged.

This embodiment can also form the semiconductor illumination device 1 with locally uniform brightness. For example, the light emitted from each LED light source 13 is limited to a circular area centered on the center point of the reflecting surface 111 and the midpoint of the connecting line of the LED light sources 13, and the light emitted from each LED is not overlapped and not connected together, so that the light emitted from the whole LED light source 13 forms a certain pattern on the reflecting surface 111, and the semiconductor illumination device 1 with uniform local brightness is formed by the lambertian-like reflection of the reflecting surface 111.

Fig. 3 is a schematic structural diagram of a semiconductor lighting device 1 according to embodiment 2 of the present invention. The structure of the semiconductor lighting device 1 of the present embodiment is substantially the same as that of the semiconductor lighting device 1 provided in embodiment 1, except that the LED light sources 13 are distributed in the central region of the reflective surface 111, specifically, the reflective unit 11 is in a semi-circular shell structure, the fixing unit 15 is in a nail-like structure formed by extending from the top center point of the semi-circular shell to the hollow space, and the free end thereof is a nail cap. The LED light source 13 is disposed at a free end of the fixing unit 15 away from the reflection surface 111, and a light emitting surface of the LED light source 13 is disposed facing the reflection surface 111. In this case, the LED light sources 13 may be arranged in the central region of the lambertian-like reflecting surface 111.

The method of forming the semiconductor lighting device with uniform brightness in the present embodiment is, for example, to limit the light emitted from each LED light source 13 to the area enclosed by the edge of the reflecting surface 111 and the intersection point of the reflecting surface 111 and the packaging unit 15, in which the light emitted from each LED is nearly uniform in the radial direction of the reflecting surface, and decreases in the direction perpendicular to the radial direction with the light emitting direction of the LED as the axis of symmetry, and the illuminance formed by the light emitted from the LED light sources 13 on the reflecting surface 111 may be superimposed to finally form a nearly uniform illuminance distribution on the whole reflecting surface 111, and the semiconductor lighting device with uniform brightness in the whole is obtained by reflection on the lambertian-like reflecting surface 111.

The present embodiment forms the semiconductor lighting device with locally uniform brightness by, for example, limiting the light emitted from each LED light source 13 to an annular region on the reflective surface 111, and the light emitted from the adjacent LED light sources can be seamlessly connected, so that the light distribution with uniform illumination intensity in the annular region is formed, and the semiconductor lighting device with uniform brightness in the annular region is formed by reflection of the lambertian-like reflective surface 111.

Fig. 4 is a schematic structural diagram of a semiconductor lighting device 1 according to embodiment 3 of the present invention. The semiconductor lighting device 1 of the present embodiment includes a housing structure 10, an LED light source 13, a driving and controlling power supply 14, a lead (not shown), and a heat sink (not shown). The LED light source 13 is disposed on the housing structure 10 in the hollow space. The drive and control power supply 14, wires and heat sink are embedded within the housing structure 10. The LED light source 13 and the driving and controlling power source are electrically connected by wires. The driving and control power supply supplies power to the LED light sources 13 and controls the operating mode thereof. The heat sink is arranged in close contact with the housing structure 10 for reducing the junction temperature of the LED light source 13.

The housing structure 10 is in the shape of a flat-topped open umbrella having a semi-enclosed hollow space, and includes a reflection unit 11 and a fixing unit 15, and the reflection unit 11 and the fixing unit 15 are connected to each other. The reflecting unit 11 has a reflecting surface 111 facing the hollow space, and the reflecting surface 111 is a lambertian-like reflecting surface. The reflecting surface 111 is a multi-section curved surface, and can be any combination of a spherical surface, an ellipsoid surface, a curved surface designed by a non-imaging method and the like; the orthographic projection of the reflecting surface 111 on the plane is circular. The housing structure 10 in this embodiment is directly formed of a material including, but not limited to, a high-reflectivity metal material such as aluminum, silver, etc., a dielectric material, a ceramic material, a plastic material, or a composite material of the above materials. The method for forming the lambertian-like reflection characteristic of the reflection surface 111 includes, but is not limited to, forming a microstructure on the surface of the reflection unit 11 of the housing structure 10 by using an injection molding process or a photolithography etching process.

The present embodiment includes two fixing units 15, wherein one fixing unit 15 is formed by extending the lower edge of the reflecting unit 11 to the hollow space, the LED light source 13 is disposed on the fixing unit 15, and the light emitting surface of the LED light source 13 is disposed facing the reflecting surface 111; the other fixing unit 15 is a nail-like structure formed by extending from the top center point of the reflecting unit 11 to the hollow space, and its free end is a nail cap. The LED light source 13 is disposed at a free end of the fixing unit 15 away from the reflection surface 111, so that the nail cap is inclined and the light emitting surface of the LED light source 13 is disposed facing the reflection surface 111. The two fixing units 15 distribute the LED light sources in the central region and the peripheral region of the lambertian-like reflecting surface 111. This embodiment is similar to the integration of embodiments 1 and 2, and thus the method of forming a semiconductor lighting device having uniform overall/local brightness can be adopted to the method provided in embodiments 1 and 2.

Fig. 5 is a schematic structural diagram of a semiconductor lighting device 1 according to embodiment 4 of the present invention. The structure of the semiconductor lighting device 1 of the present embodiment is substantially the same as that of the semiconductor lighting device 1 provided in embodiment 1, except that the shape of the housing structure 10 is different, and the housing structure 10 of the present embodiment includes a triangular, rectangular, circular or other polygonal plane top and side walls connected to the top and connected to each other, and the number of the side surfaces is different according to the shape of the top surface. Furthermore, the housing structure 10 is directly made of a reflective material and has a reflective surface 111 facing the hollow space, the reflective surface 111 being a lambertian-like reflective surface. The fixing unit 15 is formed by extending a lower edge of each of the sidewalls toward a hollow space. The fixing unit 15 is provided with the LED light sources 13, and the light emitting surfaces of the LED light sources 13 are arranged facing the reflecting surface 111, the number and the arrangement positions thereof are set according to the requirement, the number may be one or more, and the LED light sources 13 are distributed around the reflecting surface 111. The housing structure 10 in this embodiment is directly formed of a material including, but not limited to, a high-reflectivity metal material such as aluminum, silver, etc., a dielectric material, a ceramic material, a plastic material, or a composite material of the above materials. The method for forming the lambertian-like reflection characteristic of the reflection surface 111 includes, but is not limited to, forming a microstructure on the surface of the reflection unit 11 of the housing structure 10 by using an injection molding process or a photolithography etching process.

The method of forming the semiconductor lighting device with uniform brightness is, for example, to limit the light emitted from each LED to an approximately strip-shaped region, the strip-shaped region is distributed in a way that the width of the connecting line of two symmetrical LEDs as the central line is the distance between two adjacent LEDs, and the illumination formed by the light in the area of the strip-shaped region with the length of the whole reflecting surface on the reflecting surface 111 decreases monotonically with the distance from the LED light source, so that the illumination of each two symmetrical LED light sources 13 on the reflecting surface 111 overlaps each other in the area to form a uniform illumination distribution, and at the same time, the illumination formed by each two symmetrical LED light sources on the reflecting surface 111 can be seamlessly connected, thereby forming a nearly uniform illumination distribution on the whole reflecting surface 111. In this way, the light source LED light source 13 finally forms a nearly uniform illuminance distribution on the entire reflecting surface 111, and the semiconductor lighting device 1 having uniform brightness on the whole is formed by reflection on the lambertian-like reflecting surface 111.

The method of forming the semiconductor lighting device with locally uniform brightness in the present embodiment is, for example, to define the light emitted from each side LED light source 13 in the range of a stripe region deviating from the symmetrical center line of the reflecting surface 111 formed on the top plane and having a width of one quarter of the width of the LED light source near the side of the LED light source 13, and the light emitted from each LED light source can be seamlessly spliced in the range of the stripe region. With this arrangement, two stripe-shaped illuminance distribution regions can be formed on the entire reflecting surface 111, and the semiconductor illumination device 1 having a uniform local brightness can be formed by reflection from the lambertian-like reflecting surface 111.

Fig. 6 is a schematic structural diagram of a semiconductor lighting device 1 according to embodiment 5 of the present invention. The structure of the semiconductor lighting device 1 of the present embodiment is substantially the same as that of the semiconductor lighting device 1 provided in embodiment 1, except that the LED light sources 13 are distributed in the central region of the reflection surface 111, and specifically, the fixing unit 15 is a nail-like structure formed by extending from the center point of the top of the plane (also referred to as a flat top surface) to the hollow space, and the free end thereof is a nail cap. The LED light source 13 is disposed at a free end of the fixing unit 15 away from the top of the plane, so that the nail cap is inclined and the light emitting surface of the LED light source 13 is disposed facing the reflection surface 111. In this case, the LED light sources 13 may be arranged in the central region of the lambertian-like reflecting surface 111.

The method of forming the semiconductor lighting device having uniform overall/local brightness according to the present embodiment can refer to the method of embodiment 2. For example, the light emitted from each LED light source 13 is limited to an approximately strip-shaped area, two long sides of the strip-shaped area are parallel to the sides of the reflecting surface 11, the LED is located at the center of one short side, the length of the short side is the distance between two adjacent LEDs, the length of the long side is half of the reflecting surface 11, and a nearly uniform illumination distribution is formed in the area. Meanwhile, the formed illumination distribution of each LED light source 13 can be seamlessly spliced, and finally, a uniform illumination distribution is formed on the lambertian-like reflecting surface 111. After being reflected by the reflecting surface 111, the semiconductor illumination light source is formed with soft light emission and uniform brightness.

Fig. 7 is a schematic structural diagram of a semiconductor lighting device 1 according to embodiment 6 of the present invention. The semiconductor lighting device 1 of the present embodiment includes a reflection plate 11, a transparent shield 12, LED light sources 13, a driving and controlling power supply 14, and wires 17. The reflective plate 11 and the transparent shield 12 are fastened to each other to form a hollow space. The LED light source 13 is disposed in the hollow space. The LED light source 13 and the driving and control power supply 14 are electrically connected by a wire 17. A drive and control power supply 14 supplies power to the LED light sources 13 and controls their mode of operation.

The reflecting plate 11 is a flat plate structure, and the shape thereof may be triangular, rectangular, circular or other polygonal shapes. The reflecting plate 11 has a reflecting surface 111 facing the hollow space, and the reflecting surface 111 is a lambertian-like reflecting surface. The shape of the transparent shield 12 includes, but is not limited to, a spherical surface, an ellipsoidal surface, a portion of a curved surface designed using a non-imaging method, or a combination of these surface types. The LED light sources 13 are distributed in the central area of the reflecting surface 111, and a fixing unit 15 is a nail-like structure extending from the center point of the reflecting plate 11 to the hollow space, and the free end of the fixing unit is a nail cap. The LED light source 13 is disposed at a free end of the fixing unit 15 away from the reflection surface 111, so that the nail cap is inclined and the light emitting surface of the LED light source 13 is disposed facing the reflection surface 111. By adopting the method similar to the embodiment, the semiconductor illumination light source device with soft light emission and uniform overall or local brightness can be obtained, and the details are not repeated.

Fig. 8 is a schematic structural diagram of a semiconductor lighting device 1 according to embodiment 7 of the present invention. In the present embodiment, the semiconductor lighting device 1 is a mosaic of the pentagonal semiconductor lighting device 1 disclosed in embodiment 5.

Fig. 9 is a schematic structural diagram of a semiconductor lighting device 1 according to embodiment 8 of the present invention. The semiconductor lighting device 1 of the present embodiment includes a housing structure 10 and an LED light source 13. The shell structure 10 is in the shape of a strip-shaped groove, and two ends in the long strip direction are sealed. The housing structure 10 includes a reflection unit 11 and a fixing unit 15, and the reflection unit 11 and the fixing unit 15 are connected to each other. The reflection unit 11 is the main body part of the tank body, and the fixing unit 15 is a part formed by extending the edges of two long sides of the tank body to the hollow space of the tank body. The reflecting unit 11 has a reflecting surface 111 facing the hollow space, and the reflecting surface 111 is a lambertian-like reflecting surface. The fixing unit 15 is provided with the LED light sources 13, and the light emitting surfaces of the LED light sources 13 are arranged facing the reflecting surface 111, the number and the arrangement positions thereof are set according to the requirement, the number may be one or more, and the LED light sources 13 are distributed around the reflecting surface 111. The present embodiment can also obtain a semiconductor illumination light source with uniform brightness throughout or in part. For example, with a conventional straw hat type package lens, the light emitting directions of the LEDs are adjusted so that the light emitted by all the LEDs forms a nearly uniform illumination distribution on the lambertian-like reflecting surface, so that the semiconductor illumination light source with uniform brightness is formed by the reflection of the lambertian-like reflecting surface.

In addition, other modifications within the spirit of the invention will occur to those skilled in the art, and it is understood that such modifications are included within the scope of the invention as claimed.

Claims

1. A semiconductor lighting device comprising: the LED light source is arranged on the shell structure, the shell structure comprises a reflecting surface, and the LED light source is characterized in that the reflecting surface is a lambertian reflecting surface, the light emitting direction of the LED light source points to at least one part of the reflecting surface, and light emitted by the LED light source generates triangular or rectangular uniform illumination distribution on the reflecting surface, is seamlessly connected and is not overlapped, and is reflected to a half-space solid angle through the lambertian reflecting surface.

2. The semiconductor illumination device according to claim 1, wherein: the shell structure comprises but is not limited to a flat plate, a semi-spherical shell body and a semi-elliptical shell body; or a strip-shaped groove body with the cross section of trapezoid, square, semicircle or semiellipse; alternatively, flat-topped polygons; or a curved body designed using a non-imaging method.

3. The semiconductor illumination device according to claim 1, wherein: the shell structure comprises a reflection unit and a fixing unit which are connected with each other, the reflection unit is a main body part of the shell structure, and the fixing unit is formed by extending the main body part of the shell structure from the edge to the central direction of the reflection surface or is formed by extending the main body part of the shell structure from a central point to a direction far away from the central point.

4. A semiconductor illumination device according to claim 3, wherein: the whole surface of the side of the reflecting unit facing the LED light source is the lambertian reflecting surface, and the lambertian reflecting surface includes but is not limited to a plane, a spherical surface, an ellipsoid, a part of a curved surface designed by a non-imaging method, or a combination thereof.

5. The semiconductor illumination device according to claim 1 or 4, wherein: the orthographic projection of the reflecting surface of the lambertian-like type on a plane comprises but is not limited to a circle, an ellipse and a square.

6. The semiconductor illumination device according to claim 1, wherein: the LED light source includes, but is not limited to, a concentrated distribution or a dispersed distribution; the LED light sources are distributed in a peripheral or central region including, but not limited to, the lambertian-like reflecting surface.

7. The semiconductor illumination device according to claim 1, wherein: the material forming the lambertian reflecting surface includes, but is not limited to, aluminum, silver, dielectric materials, ceramic materials, plastic materials, or a composite material of the above materials.

8. The semiconductor illumination device according to claim 1, wherein: the method for forming the lambertian-like reflection characteristic of the reflection surface includes, but is not limited to, forming a microstructure on the surface of the reflection material by using an injection molding process or a photolithography etching process, and filling the microstructure with a material for forming the lambertian-like reflection characteristic.

9. The semiconductor illumination device according to claim 1, wherein: the LED light source is characterized by further comprising a transparent protective cover, a driving and controlling power supply, a wire and a radiator, wherein the transparent protective cover and the shell structure are mutually buckled to form a hollow space, the driving and controlling power supply, the wire and the radiator are embedded in the shell structure, the LED light source is electrically connected with the driving and controlling power supply through the wire, the driving and controlling power supply supplies electric energy to the LED light source and controls the working mode of the LED light source, and the radiator is closely contacted with the shell structure and used for reducing the junction temperature of the LED light source.

10. The semiconductor illumination device according to claim 1, wherein: the light emitting wavelength of the LED light source includes, but is not limited to, red light, green light, blue light, and white light.