CN105225944A - A kind of metal level minimizing technology - Google Patents
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 59
- 239000002184 metal Substances 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 47
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000010936 titanium Substances 0.000 claims abstract description 40
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 40
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 39
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000010937 tungsten Substances 0.000 claims abstract description 39
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 39
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910000838 Al alloy Inorganic materials 0.000 claims description 29
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000002791 soaking Methods 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 238000009835 boiling Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FHKBQTYCGXHYRV-UHFFFAOYSA-N N.[O-2].[Ti+4] Chemical compound N.[O-2].[Ti+4] FHKBQTYCGXHYRV-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum-silicon-copper Chemical compound 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
技术领域technical field
本发明涉及半导体芯片制作领域，特别涉及一种金属层去除方法。The invention relates to the field of semiconductor chip fabrication, in particular to a method for removing a metal layer.
背景技术Background technique
半导体芯片中的金属多选用铝合金材料(铝硅铜合金或铝硅合金，主要成分均为铝)，为了减小接触电阻、防止硅铝互溶等问题，一些产品(如CMOS(互补金属氧化物半导体)、DMOS(双扩展金属氧化物半导体)等)通常在上述合金下方与氧化硅层交界处依次沉积钛和氮化钛。而对于CMOS产品而言，为了减小孔的尺寸有时会选用钨来填充孔，起连接不同电路层次的作用。The metal in the semiconductor chip is mostly made of aluminum alloy (aluminum-silicon-copper alloy or aluminum-silicon alloy, the main component is aluminum). In order to reduce contact resistance and prevent the mutual dissolution of silicon and aluminum, some products (such as CMOS (complementary metal oxide) Semiconductor), DMOS (Double Extended Metal Oxide Semiconductor), etc.) usually deposit titanium and titanium nitride sequentially at the junction of the above alloy and the silicon oxide layer. For CMOS products, in order to reduce the size of the hole, sometimes tungsten is used to fill the hole and play the role of connecting different circuit levels.
在芯片制造过程中产品的返工，反向工程及产品失效分析均迫切需要一种可将金属层去除，而不损伤下方层次的方法。目前，等离子体刻蚀或化学方法均可实现金属层中铝合金层的去除。而钨、氮化钛的去除是个难点，目前主要通过等离子体刻蚀达到去除的目的，该方法存在着等离子体刻蚀设备成本高昂，配套设施较多，效率低下，操作复杂的缺点。而传统的化学方法无法达到完全去除金属层而不损伤金属下方的氧化硅层次，且存在耗时较长、去除不彻底等缺点。In the process of chip manufacturing, product rework, reverse engineering and product failure analysis all urgently need a method that can remove the metal layer without damaging the underlying layer. Currently, plasma etching or chemical methods can be used to remove the aluminum alloy layer in the metal layer. However, the removal of tungsten and titanium nitride is a difficult point. At present, the purpose of removal is mainly achieved by plasma etching. This method has the disadvantages of high cost of plasma etching equipment, many supporting facilities, low efficiency, and complicated operation. However, traditional chemical methods cannot completely remove the metal layer without damaging the silicon oxide layer under the metal, and have disadvantages such as time-consuming and incomplete removal.
发明内容Contents of the invention
本发明要解决的技术问题是提供一种金属层去除方法，通过使用化学方法逐层去除半导体芯片的金属层，并且不损伤下方的层次，具有操作简单、高效、成本低廉的特点。The technical problem to be solved by the present invention is to provide a metal layer removal method, which removes the metal layer of a semiconductor chip layer by layer by using a chemical method without damaging the underlying layer, and has the characteristics of simple operation, high efficiency and low cost.
为了解决上述技术问题，本发明实施例提供一种金属层去除方法，应用于半导体芯片，所述金属层包括钨、氮化钛及钛层，其中，所述方法具体为：用浓硫酸浸泡所述半导体芯片去除钨、氮化钛及钛层。In order to solve the above-mentioned technical problems, an embodiment of the present invention provides a method for removing a metal layer, which is applied to a semiconductor chip. The metal layer includes tungsten, titanium nitride and titanium layers. The semiconductor chip removes tungsten, titanium nitride and titanium layers.
进一步的，所述去除钨、氮化钛及钛层的方法具体为：用加热至沸腾的质量浓度为97％的浓硫酸浸泡所述半导体芯片2至3分钟。Further, the method for removing tungsten, titanium nitride and titanium layer specifically includes: immersing the semiconductor chip in concentrated sulfuric acid with a mass concentration of 97% heated to boiling for 2 to 3 minutes.
所述金属层去除方法，其中，所述金属层还包括铝合金层，所述方法还包括：用盐酸浸泡所述半导体芯片去除铝合金层。The method for removing the metal layer, wherein the metal layer further includes an aluminum alloy layer, and the method further includes: soaking the semiconductor chip with hydrochloric acid to remove the aluminum alloy layer.
进一步的，所述去除铝合金层的方法具体为：常温下，用质量浓度为36％的盐酸浸泡所述半导体芯片5至10分钟。Further, the method for removing the aluminum alloy layer specifically includes: soaking the semiconductor chip with hydrochloric acid with a mass concentration of 36% for 5 to 10 minutes at room temperature.
进一步地，紧邻半导体芯片二氧化硅层的金属层为钨、氮化钛及钛层，所述钨、氮化钛及钛层的最外层为铝合金层，所述金属层的去除方法为：Further, the metal layer next to the silicon dioxide layer of the semiconductor chip is a tungsten, titanium nitride and titanium layer, the outermost layer of the tungsten, titanium nitride and titanium layer is an aluminum alloy layer, and the removal method of the metal layer is as follows: :
用盐酸浸泡所述半导体芯片，去除铝合金层；然后将所述半导体芯片在浓硫酸中浸泡去除钨、氮化钛及钛层。soaking the semiconductor chip with hydrochloric acid to remove the aluminum alloy layer; then soaking the semiconductor chip in concentrated sulfuric acid to remove the tungsten, titanium nitride and titanium layer.
进一步地，紧邻半导体芯片二氧化硅层的金属层为钨、氮化钛及钛层，所述钨、氮化钛及钛层的外面一层为铝合金层，所述铝合金的外面还分布着钨、氮化钛及钛层，所述金属层的去除方法为：Further, the metal layer adjacent to the silicon dioxide layer of the semiconductor chip is a tungsten, titanium nitride and titanium layer, and the outer layer of the tungsten, titanium nitride and titanium layer is an aluminum alloy layer, and the outer surface of the aluminum alloy is also distributed Tungsten, titanium nitride and titanium layer, the removal method of described metal layer is:
将所述半导体芯片在浓硫酸中浸泡2至3分钟，去除钨、氮化钛及钛层；待半导体芯片冷却后，将半导体芯片在盐酸中浸泡去除铝合金层；最后将所述半导体芯片在浓硫酸中浸泡去除钨、氮化钛及钛层。Soak the semiconductor chip in concentrated sulfuric acid for 2 to 3 minutes to remove tungsten, titanium nitride and titanium layer; after the semiconductor chip is cooled, soak the semiconductor chip in hydrochloric acid to remove the aluminum alloy layer; finally put the semiconductor chip in Soak in concentrated sulfuric acid to remove tungsten, titanium nitride and titanium layer.
本发明的上述技术方案的有益效果如下：The beneficial effects of above-mentioned technical scheme of the present invention are as follows:
上述方案中，通过使用化学方法，对半导体芯片的金属层进行分批去除，并且不损伤金属层下方的层次，使用此方法，能有效的将金属层去除，操作简单、高效，成本低廉。In the above solution, the metal layer of the semiconductor chip is removed in batches by using a chemical method without damaging the layers below the metal layer. Using this method, the metal layer can be effectively removed, and the operation is simple, efficient, and low in cost.
附图说明Description of drawings
图1为本发明实施例的半导体芯片金属层去除前的金属层次示意图；1 is a schematic diagram of metal layers before removal of the metal layer of a semiconductor chip according to an embodiment of the present invention;
图2为本发明实施例的半导体芯片金属层去除后的示意图。FIG. 2 is a schematic diagram of a semiconductor chip after removal of a metal layer according to an embodiment of the present invention.
具体实施方式detailed description
为使本发明要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.
本发明针对现有的用等离子体刻蚀去除钨、氮化钛及钛层的设备成本高昂，配套设施较多，效率低下，操作复杂的问题，提供一种金属层去除方法。The invention aims at the problems of high equipment cost, many supporting facilities, low efficiency and complicated operation of the existing equipment for removing tungsten, titanium nitride and titanium layer by plasma etching, and provides a method for removing the metal layer.
本发明提供的一种金属层去除方法，应用于半导体芯片，所述金属层包括钨、氮化钛及钛层，其中，所述方法具体为：用浓硫酸浸泡所述半导体芯片去除钨、氮化钛及钛层。A method for removing a metal layer provided by the present invention is applied to a semiconductor chip, and the metal layer includes tungsten, titanium nitride and a titanium layer, wherein the method specifically includes: soaking the semiconductor chip with concentrated sulfuric acid to remove tungsten and nitrogen Titanium oxide and titanium layer.
进一步的，所述方法的具体实现过程为：用加热至沸腾的质量浓度为97％的浓硫酸浸泡所述半导体芯片2至3分钟。Further, the specific implementation process of the method is: soaking the semiconductor chip with concentrated sulfuric acid with a mass concentration of 97% heated to boiling for 2 to 3 minutes.
上述方法是利用加热时浓硫酸的强氧化性去除半导体芯片的钨、氮化钛及钛层。The above-mentioned method utilizes the strong oxidation of concentrated sulfuric acid during heating to remove the tungsten, titanium nitride and titanium layers of the semiconductor chip.
对于通常的半导体芯片来说，芯片的金属层还包括铝合金层，因此对于本发明提供的金属层去除方法，其中，所述金属层还包括铝合金层，所述方法具体为：用盐酸浸泡所述半导体芯片去除铝合金层。For a common semiconductor chip, the metal layer of the chip also includes an aluminum alloy layer, so for the method for removing the metal layer provided by the present invention, wherein the metal layer also includes an aluminum alloy layer, the method specifically includes: immersing the metal layer with hydrochloric acid The aluminum alloy layer is removed from the semiconductor chip.
进一步的，所述方法的具体实现过程为：常温下，用质量浓度为36％的盐酸浸泡所述半导体芯片5至10分钟。Further, the specific implementation process of the method is: soaking the semiconductor chip with hydrochloric acid with a mass concentration of 36% for 5 to 10 minutes at normal temperature.
应用此方法可以方便的去除半导体芯片的金属层中铝合金层。The application of this method can conveniently remove the aluminum alloy layer in the metal layer of the semiconductor chip.
以上方法的实施过程，对于不同的金属层次具有不同的处理顺序，下面举例说明。The implementation process of the above method has different processing sequences for different metal layers, which will be illustrated with examples below.
如图1所示，所述半导体芯片的金属层分布顺序为：与二氧化硅层5相邻的钛4、氮化钛3以及用来填充孔的钨层2，最外层的为铝合金层1，此种金属层的去除顺序为：首先在常温下，将半导体芯片在质量浓度为36％的盐酸中浸泡5至10分钟，去除铝合金层；然后将所述半导体芯片在加热至沸腾的质量浓度为97％的浓硫酸中浸泡2至3分钟，利用浓硫酸的强氧化性去除钨、氮化钛及钛层。As shown in Figure 1, the distribution order of the metal layers of the semiconductor chip is: titanium 4 adjacent to the silicon dioxide layer 5, titanium nitride 3, and a tungsten layer 2 for filling holes, and the outermost layer is aluminum alloy Layer 1, the removal sequence of this metal layer is as follows: first, at normal temperature, the semiconductor chip is soaked in hydrochloric acid with a mass concentration of 36% for 5 to 10 minutes to remove the aluminum alloy layer; then the semiconductor chip is heated to boiling Soak in concentrated sulfuric acid with a mass concentration of 97% for 2 to 3 minutes, and use the strong oxidizing property of concentrated sulfuric acid to remove tungsten, titanium nitride and titanium layer.
如图2所示，去除金属层的半导体芯片剩下二氧化硅层5裸露在外面。As shown in FIG. 2 , the semiconductor chip with the metal layer removed leaves the silicon dioxide layer 5 exposed outside.
对于一些半导体材料，可能没有用到用来填充孔的钨，此时半导体芯片金属层的分布为：紧邻二氧化硅层的为氮化钛及钛层，最外层为铝合金层，此种金属层的去除顺序为：首先在常温下，将半导体芯片在质量浓度为36％的盐酸中浸泡5至10分钟，去除铝合金层；然后将所述半导体芯片在加热至沸腾的质量浓度为97％的浓硫酸中浸泡2至3分钟，利用浓硫酸的强氧化性去除氮化钛及钛层。For some semiconductor materials, tungsten used to fill the hole may not be used. At this time, the distribution of the metal layer of the semiconductor chip is: the layer next to the silicon dioxide layer is titanium nitride and titanium layer, and the outermost layer is aluminum alloy layer. The removal sequence of the metal layer is: first at normal temperature, the semiconductor chip is soaked in hydrochloric acid with a mass concentration of 36% for 5 to 10 minutes to remove the aluminum alloy layer; then the semiconductor chip is heated to boiling with a mass concentration of 97 % concentrated sulfuric acid for 2 to 3 minutes, and use the strong oxidizing property of concentrated sulfuric acid to remove titanium nitride and titanium layer.
所述半导体芯片金属层的分布顺序还可以为紧邻二氧化硅层的为钨、氮化钛及钛层，上面一层为铝合金层，铝合金层的上面还分布着钨、氮化钛及钛层，此种半导体芯片的金属层的去除顺序为：将所述半导体芯片在加热至沸腾的质量浓度为97％的浓硫酸中浸泡2至3分钟，利用浓硫酸的强氧化性去除钨、氮化钛及钛层；待半导体芯片冷却后，常温下，将半导体芯片在质量浓度为36％的盐酸中浸泡5至10分钟，去除铝合金层；最后将所述半导体芯片在加热至沸腾的质量浓度为97％的浓硫酸中浸泡2至3分钟，利用浓硫酸的强氧化性去除钨、氮化钛及钛层。The distribution order of the metal layers of the semiconductor chip can also be tungsten, titanium nitride and titanium layers next to the silicon dioxide layer, the upper layer is an aluminum alloy layer, and tungsten, titanium nitride and titanium nitride are also distributed on the aluminum alloy layer. Titanium layer, the removal order of the metal layer of this kind of semiconductor chip is: the described semiconductor chip is soaked in the concentrated sulfuric acid of 97% mass concentration that is heated to boiling for 2 to 3 minutes, utilizes the strong oxidizing property of concentrated sulfuric acid to remove tungsten, Titanium nitride and titanium layer; after the semiconductor chip is cooled, at room temperature, the semiconductor chip is soaked in hydrochloric acid with a mass concentration of 36% for 5 to 10 minutes to remove the aluminum alloy layer; finally, the semiconductor chip is heated to boiling Soak in concentrated sulfuric acid with a mass concentration of 97% for 2 to 3 minutes, and use the strong oxidizing property of concentrated sulfuric acid to remove tungsten, titanium nitride and titanium layer.
应当说明的是，当所述半导体芯片的金属层分布顺序与上述方案不同时，所有运用此种方法去除金属层的方案均属于本发明的保护范围，在此不一一列举。It should be noted that when the distribution order of the metal layers of the semiconductor chip is different from the above-mentioned solutions, all solutions using this method to remove the metal layers belong to the protection scope of the present invention, and are not listed here.
利用上述方法，根据不同产品的金属层次结构安排所述去除步骤，在不损伤下方层次的基础上，实现了对不同金属层次产品的金属层的去除，操作简单、高效，成本低廉。Using the above method, the removal steps are arranged according to the metal layer structure of different products, and the removal of the metal layers of products with different metal layers is realized without damaging the lower layer, and the operation is simple, efficient, and low in cost.
以上所述的是本发明的优选实施方式，应当指出对于本技术领域的普通人员来说，在不脱离本发明所述原理前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。What has been described above is a preferred embodiment of the present invention. It should be pointed out that for those skilled in the art, some improvements and modifications can also be made without departing from the principle of the present invention. These improvements and modifications should also be considered as Be the protection scope of the present invention.
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| CN109266854A (en) * | 2017-07-17 | 2019-01-25 | 宁波创润新材料有限公司 | Sputtering target material recovery method |
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| CN109266854A (en) * | 2017-07-17 | 2019-01-25 | 宁波创润新材料有限公司 | Sputtering target material recovery method |
| CN108277349A (en) * | 2018-02-01 | 2018-07-13 | 燕山大学 | A kind of selective reaction separation of titanium aluminium laminar composite and recovery method |
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