CN105217634B - A kind of preparation method of silicon carbide nanotube - Google Patents
A kind of preparation method of silicon carbide nanotube Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 20
- 239000002071 nanotube Substances 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 34
- HPTYUNKZVDYXLP-UHFFFAOYSA-N aluminum;trihydroxy(trihydroxysilyloxy)silane;hydrate Chemical compound O.[Al].[Al].O[Si](O)(O)O[Si](O)(O)O HPTYUNKZVDYXLP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052621 halloysite Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000007787 solid Substances 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000003756 stirring Methods 0.000 claims abstract description 17
- 239000008367 deionised water Substances 0.000 claims abstract description 16
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 16
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims abstract description 12
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 239000002253 acid Substances 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 239000000725 suspension Substances 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims abstract description 3
- 238000005406 washing Methods 0.000 claims abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 239000005416 organic matter Substances 0.000 claims description 6
- 238000010306 acid treatment Methods 0.000 claims description 5
- 239000003093 cationic surfactant Substances 0.000 claims description 5
- 230000009881 electrostatic interaction Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical group [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 238000009776 industrial production Methods 0.000 abstract description 2
- 238000003763 carbonization Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000002086 nanomaterial Substances 0.000 description 7
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- CQBLUJRVOKGWCF-UHFFFAOYSA-N [O].[AlH3] Chemical group [O].[AlH3] CQBLUJRVOKGWCF-UHFFFAOYSA-N 0.000 description 3
- 229910052622 kaolinite Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000005995 Aluminium silicate Substances 0.000 description 2
- 235000012211 aluminium silicate Nutrition 0.000 description 2
- 238000001241 arc-discharge method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004729 solvothermal method Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- Carbon And Carbon Compounds (AREA)
Abstract
本发明公开一种碳化硅纳米管的制备方法,包括以下步骤:在水浴下向埃洛石的悬浊液中滴加八烷基三甲基溴化铵溶液,滴加完毕后再滴加丙酮,滴加完毕后于相同条件下继续搅拌,最后离心分离,洗涤烘干并研磨;将粉末置于管式炉中通N2保护下碳化,将碳化后的固体物放入瓶中,加入盐酸溶液,搅拌,固液分离,洗涤,烘干;将得到的颗粒置于管式炉中,在氩气保护下,程序升温煅烧后冷却至室温,将煅烧的产物浸泡于氢氟酸与盐酸的混合酸中,清洗掉未反应二氧化硅,用去离子水洗涤烘干,得到碳化硅纳米管。该方法以埃洛石中的硅为原材料,充分利用埃洛石的管状结构,原料来源廉价,过程可控,易于实现工业化生产。The invention discloses a method for preparing silicon carbide nanotubes, which comprises the following steps: adding an octaalkyltrimethylammonium bromide solution dropwise to a halloysite suspension in a water bath, and then adding acetone dropwise after the dropwise addition , continue to stir under the same conditions after the dropwise addition, and finally centrifuge, wash, dry and grind; put the powder in a tube furnace for carbonization under the protection of N2 , put the carbonized solid into a bottle, and add hydrochloric acid solution, stirring, solid-liquid separation, washing, and drying; the obtained particles are placed in a tube furnace, under the protection of argon, the temperature is programmed to be calcined and then cooled to room temperature, and the calcined product is soaked in a mixture of hydrofluoric acid and hydrochloric acid. In the mixed acid, the unreacted silicon dioxide is washed away, washed and dried with deionized water, and the silicon carbide nanotube is obtained. The method uses silicon in the halloysite as a raw material, fully utilizes the tubular structure of the halloysite, has cheap raw material source, controllable process, and is easy to realize industrial production.
Description
技术领域technical field
本发明属于纳米材料制备技术领域,尤其涉及一种碳化硅纳米管的制备方法。The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a method for preparing silicon carbide nanotubes.
背景技术Background technique
碳化硅(SiC)俗称金刚砂,宝石名称钻髓,为硅与碳相键结而成的陶瓷状化合物,碳化硅在大自然以莫桑石这种稀罕的矿物的形式存在。自1893年起碳化硅粉末被大量用作磨料。将碳化硅粉末烧结可得到坚硬的陶瓷状碳化硅颗粒,并可将之用于诸如汽车刹车片、离合器和防弹背心等需要高耐用度的材料中,在诸如发光二极管、早期的无线电探测器之类的电子器件制造中也有使用。如今碳化硅被广泛用于制造高温、高压半导体。Silicon carbide (SiC), commonly known as corundum, gemstone name drill pith, is a ceramic-like compound formed by bonding silicon and carbon. Silicon carbide exists in nature as a rare mineral such as moissanite. Silicon carbide powder has been widely used as abrasive since 1893. Sintering silicon carbide powder can produce hard ceramic-like silicon carbide particles, which can be used in materials that require high durability, such as automobile brake pads, clutches and bulletproof vests, in materials such as light-emitting diodes, early radio detectors, etc. It is also used in the manufacture of similar electronic devices. Silicon carbide is widely used today in the manufacture of high-temperature, high-voltage semiconductors.
目前,制备SiC纳米材料的主要方法有模板生长法、碳热还原法、化学气相沉积法和有机前驱体热解法等。At present, the main methods for preparing SiC nanomaterials include template growth method, carbothermal reduction method, chemical vapor deposition method and organic precursor pyrolysis method, etc.
二维SiC纳米材料的制备方法主要存在以下几个问题:(1)工艺过程中温度高(模板法、激光烧蚀法、电弧放电法、热蒸发法、碳热还原法)或压力大(溶剂热法),涉及过程复杂;(2)产物中常含有金属杂质(如金属气-液-固(VLS)催化生长法)或表面包覆SiO2层(激光烧蚀法、电弧放电法、碳热还原法),形貌不均一;(3)产量低(模板法、溶剂热法)。这些问题制约了高纯二维SiC纳米材料的制备及其本征性能的研究,也不利于实现二维SiC纳米材料的规模化生产。因此,发展新型低成本高纯二维SiC纳米材料的制备技术对于推动二维SiC纳米材料的研究、规模化生产以及在相关高科技领域中的应用具有十分重要的意义。The preparation methods of two-dimensional SiC nanomaterials mainly have the following problems: (1) high temperature (template method, laser ablation method, arc discharge method, thermal evaporation method, carbothermal reduction method) or high pressure (solvent (2) the product often contains metal impurities (such as metal vapor-liquid-solid (VLS) catalytic growth method) or the surface is coated with SiO 2 layer (laser ablation method, arc discharge method, carbon thermal method) reduction method), the morphology is not uniform; (3) the yield is low (template method, solvothermal method). These problems restrict the preparation of high-purity two-dimensional SiC nanomaterials and the study of their intrinsic properties, and are not conducive to the large-scale production of two-dimensional SiC nanomaterials. Therefore, the development of new low-cost and high-purity two-dimensional SiC nanomaterials preparation technology is of great significance to promote the research, large-scale production and application of two-dimensional SiC nanomaterials in related high-tech fields.
埃洛石又被称多水高岭石。化学组成与高岭石相同,具有相同的1∶1的SiO2/Al2O3比,片层结构卷曲成了SiO2在外层,Al2O3在内层,因此埃络石纳米管具有与SiO2非常相似的表面性质,和Al2O3相似的内层性质。一般来说埃洛石纳米管由多个高岭土片层卷曲而成,是天然的多壁型纳米管,管外径为20-100nm,内径为5-30nm,长度为150nm-2μm。埃洛石与高岭土在晶体结构上的主要区别,一是管状构造,一是片状构造。埃洛石纳米管,由高岭石的片层在天然条件下卷曲而成,呈微管状结构。Halloysite is also known as kaolinite. The chemical composition is the same as that of kaolinite, with the same ratio of 1:1 SiO 2 /Al 2 O 3 , and the lamellar structure is curled into SiO 2 in the outer layer and Al 2 O 3 in the inner layer, so the halloite nanotubes have Very similar surface properties to SiO2, similar inner layer properties to Al 2 O 3 . Generally speaking, halloysite nanotubes are formed by curling multiple kaolin sheets and are natural multi-walled nanotubes with an outer diameter of 20-100nm, an inner diameter of 5-30nm, and a length of 150nm-2μm. The main difference between halloysite and kaolin in terms of crystal structure is a tubular structure and a sheet structure. Halloysite nanotubes are formed by kaolinite sheets curled under natural conditions, showing a microtubular structure.
发明内容Contents of the invention
为克服上述现有技术的缺陷,本发明提供一种原料廉价、环境污染小的碳化硅纳米管的制备方法,包括以下步骤:In order to overcome the defects of the above-mentioned prior art, the present invention provides a method for preparing silicon carbide nanotubes with cheap raw materials and low environmental pollution, comprising the following steps:
(1)在60~65℃水浴下向含有10g埃洛石的悬浊液中滴加含8~16mmol的八烷基三甲基溴化铵溶液,八烷基三甲基溴化铵溶液的浓度为1~4mol/L,滴加过程中连续搅拌,滴加完毕后再滴加丙酮7~9mL,滴加完毕后于相同条件下继续搅拌2~3h,离心分离,将得到的固体物用去离子水洗涤4~5次,100~105℃下烘干,将固体物碾磨成50~80目的粉末,在该过程中阳离子表面活性剂通过静电作用被作为单分子固定到埃洛石表面;(1) Add dropwise octaalkyltrimethylammonium bromide solution containing 8-16mmol to the suspension containing 10g of halloysite in a water bath at 60-65°C, the octaalkyltrimethylammonium bromide solution The concentration is 1-4mol/L, stirring continuously during the dropping process, and then adding 7-9 mL of acetone dropwise after the dropping is completed, continuing to stir for 2-3 hours under the same conditions after the dropping, centrifuging, and using Wash with deionized water for 4 to 5 times, dry at 100 to 105°C, and grind the solid into 50 to 80 mesh powder. During this process, the cationic surfactant is fixed to the halloysite surface as a single molecule through electrostatic interaction ;
(2)将粉末置于管式炉中通N2保护,在500~800℃下碳化4~6h,再持续通N2冷却至室温,有机物被高温碳化,在埃洛石表面形成炭质层;(2) Put the powder in a tube furnace with N2 protection, carbonize at 500-800°C for 4-6 hours, then continue to pass N2 to cool to room temperature, the organic matter is carbonized at high temperature, and a carbonaceous layer is formed on the surface of halloysite ;
(3)将碳化后的固体物2~4g放入瓶中,加入10~15mL浓度为20~40%的盐酸溶液,搅拌20~30h,溶解掉埃洛石中的铝氧结构,固液分离,用去离子水清洗,60~70℃恒温干燥5~6h,得到碳层包覆的氧化硅的碳硅结合颗粒;(3) Put 2 to 4 g of the carbonized solid into a bottle, add 10 to 15 mL of hydrochloric acid solution with a concentration of 20 to 40%, stir for 20 to 30 hours, dissolve the alumina structure in the halloysite, and separate the solid and liquid , washed with deionized water, and dried at a constant temperature of 60-70°C for 5-6 hours to obtain carbon-silicon-bonded particles of silicon oxide coated with a carbon layer;
(4)将碳硅结合颗粒置于管式炉中,在氩气保护下,以升温速率为10~15℃/min升温至600℃,恒温60~120min,继续升温,速率为10~15℃/min,升温至1400~1500℃,恒温240~360min,然后降温至300~400℃,通入空气,煅烧60~120min,冷却至室温,将煅烧后的产物浸泡于氢氟酸与盐酸的混合酸中,氢氟酸与盐酸的摩尔比为0.5-10:1,混合酸处理时间为4~24h,清洗掉未反应二氧化硅,用去离子水洗涤至pH=7后,80~105℃烘干,得到碳化硅纳米管。(4) Put the carbon-silicon bonded particles in a tube furnace, under the protection of argon, raise the temperature to 600°C at a heating rate of 10-15°C/min, keep the temperature constant for 60-120min, and continue to heat up at a rate of 10-15°C /min, heat up to 1400-1500°C, keep the temperature constant for 240-360min, then cool down to 300-400°C, feed air, calcine for 60-120min, cool to room temperature, soak the calcined product in a mixture of hydrofluoric acid and hydrochloric acid In the acid, the molar ratio of hydrofluoric acid to hydrochloric acid is 0.5-10:1, the mixed acid treatment time is 4-24h, and the unreacted silica is washed away, and after washing with deionized water to pH = 7, 80-105°C drying to obtain silicon carbide nanotubes.
本发明的有益效果是:The beneficial effects of the present invention are:
本发明与现有技术相比具有下述特征和优点:(1)以纳米管状材料表面包覆的有机物为碳源,发挥了埃洛石的特殊结构所带来的比表面积大、管状规则的特点,首先在埃洛石表面得到碳层,有利于反应物硅源与碳源充分接触,反应完全。(2)以埃洛石中的硅为原材料,充分利用埃洛石的管状结构,最大化利用碳源和硅源。(3)原料来源廉价,过程可控,易于实现工业化生产。Compared with the prior art, the present invention has the following characteristics and advantages: (1) the organic matter coated on the surface of the nanotube-shaped material is used as the carbon source, and the special structure of the halloysite has a large specific surface area and a regular tubular shape. Features: First, a carbon layer is obtained on the surface of halloysite, which is beneficial to the full contact between the reactant silicon source and the carbon source, and the reaction is complete. (2) Using silicon in halloysite as a raw material, making full use of the tubular structure of halloysite, and maximizing the use of carbon and silicon sources. (3) The source of raw materials is cheap, the process is controllable, and it is easy to realize industrial production.
具体实施方式detailed description
实施例1Example 1
在65℃水浴下向含有10g埃洛石的悬浊液中滴加含16mmol的八烷基三甲基溴化铵溶液,八烷基三甲基溴化铵溶液的浓度为1mol/L,滴加过程中连续搅拌,滴加完毕后再滴加丙酮9mL,滴加完毕后于相同条件下继续搅拌3h,离心分离,将得到的固体物用去离子水洗涤5次,105℃下烘干,将固体物碾磨成80目的粉末,在该过程中阳离子表面活性剂通过静电作用被作为单分子固定到埃洛石表面;将粉末置于管式炉中通N2保护,在800℃下碳化6h,再持续通N2冷却至室温,有机物被高温碳化,在埃洛石表面形成炭质层;将碳化后的固体物4g放入瓶中,加入15mL浓度为40%的盐酸溶液,搅拌30h,溶解掉埃洛石中的铝氧结构,固液分离,用去离子水清洗,70℃恒温干燥6h,得到碳层包覆的氧化硅的碳硅结合颗粒;将碳硅结合颗粒置于管式炉中,在氩气保护下,以升温速率为15℃/min升温至600℃,恒温120min,继续升温,速率为15℃/min,升温至1500℃,恒温360min,然后降温至400℃,通入空气,煅烧120min,冷却至室温,将煅烧后的产物浸泡于氢氟酸与盐酸的混合酸中,氢氟酸与盐酸的摩尔比为10:1,混合酸处理时间为24h,清洗掉未反应二氧化硅,用去离子水洗涤至pH=7后,105℃烘干,得到碳化硅纳米管。In a water bath at 65°C, add dropwise an octaalkyltrimethylammonium bromide solution containing 16 mmol to the suspension containing 10 g of halloysite, the concentration of the octaalkyltrimethylammonium bromide solution being 1 mol/L, drop Stir continuously during the addition process, then add 9 mL of acetone dropwise after the dropwise addition, continue to stir for 3 h under the same conditions after the dropwise addition, centrifuge, wash the obtained solid with deionized water for 5 times, and dry at 105°C. The solid is ground into 80-mesh powder, during which the cationic surfactant is fixed to the surface of halloysite as a single molecule through electrostatic interaction; the powder is placed in a tube furnace and protected by N2 , and carbonized at 800°C 6h, then continue to pass N2 to cool to room temperature, the organic matter is carbonized at high temperature, and a carbonaceous layer is formed on the surface of the halloysite; put 4g of the carbonized solid into the bottle, add 15mL of 40% hydrochloric acid solution, and stir for 30h , dissolve the aluminum-oxygen structure in the halloysite, separate the solid from the liquid, wash with deionized water, and dry at a constant temperature of 70°C for 6 hours to obtain carbon-silicon-bonded particles of silicon oxide coated with a carbon layer; place the carbon-silicon-bonded particles in a tube In the type furnace, under the protection of argon, the temperature was raised to 600°C at a heating rate of 15°C/min, and the temperature was kept constant for 120 minutes. Air was introduced, calcined for 120min, cooled to room temperature, and the calcined product was soaked in the mixed acid of hydrofluoric acid and hydrochloric acid, the molar ratio of hydrofluoric acid and hydrochloric acid was 10:1, the mixed acid treatment time was 24h, and the The unreacted silicon dioxide was washed with deionized water until pH = 7, and then dried at 105° C. to obtain silicon carbide nanotubes.
实施例2Example 2
在60℃水浴下向含有10g埃洛石的悬浊液中滴加含8mmol的八烷基三甲基溴化铵溶液,八烷基三甲基溴化铵溶液的浓度为4mol/L,滴加过程中连续搅拌,滴加完毕后再滴加丙酮7mL,滴加完毕后于相同条件下继续搅拌2h,离心分离,将得到的固体物用去离子水洗涤4次,100℃下烘干,将固体物碾磨成50目的粉末,在该过程中阳离子表面活性剂通过静电作用被作为单分子固定到埃洛石表面;将粉末置于管式炉中通N2保护,在500℃下碳化4h,再持续通N2冷却至室温,有机物被高温碳化,在埃洛石表面形成炭质层;将碳化后的固体物2g放入瓶中,加入10mL浓度为20%的盐酸溶液,搅拌20h,溶解掉埃洛石中的铝氧结构,固液分离,用去离子水清洗,60℃恒温干燥5h,得到碳层包覆的氧化硅的碳硅结合颗粒;将碳硅结合颗粒置于管式炉中,在氩气保护下,以升温速率为10℃/min升温至600℃,恒温60min,继续升温,速率为10℃/min,升温至1400℃,恒温240min,然后降温至300℃,通入空气,煅烧60min,冷却至室温,将煅烧后的产物浸泡于氢氟酸与盐酸的混合酸中,氢氟酸与盐酸的摩尔比为0.5:1,混合酸处理时间为4h,清洗掉未反应二氧化硅,用去离子水洗涤至pH=7后,80℃烘干,得到碳化硅纳米管。Add dropwise octaalkyltrimethylammonium bromide solution containing 8mmol to the suspension containing 10g halloysite in a water bath at 60°C, the concentration of octaalkyltrimethylammonium bromide solution is 4mol/L, drop Stir continuously during the addition process, and then add 7 mL of acetone dropwise after the dropwise addition, continue to stir for 2 h under the same conditions after the dropwise addition, centrifuge, wash the obtained solid with deionized water 4 times, and dry at 100 ° C. The solid is ground into a 50-mesh powder, during which the cationic surfactant is fixed as a single molecule on the halloysite surface through electrostatic interaction; the powder is placed in a tube furnace and protected by N2 , and carbonized at 500 °C 4h, then continue to pass N2 to cool to room temperature, the organic matter is carbonized at high temperature, and a carbonaceous layer is formed on the surface of the halloysite; put 2g of the carbonized solid matter into a bottle, add 10mL of 20% hydrochloric acid solution, and stir for 20h , dissolve the aluminum-oxygen structure in the halloysite, separate the solid from the liquid, wash with deionized water, and dry at a constant temperature of 60°C for 5 hours to obtain carbon-silicon-bonded particles of silicon oxide coated with a carbon layer; place the carbon-silicon-bonded particles in a tube In the type furnace, under the protection of argon, the temperature was raised to 600°C at a heating rate of 10°C/min, and the temperature was kept constant for 60 minutes. Air was introduced, calcined for 60 minutes, cooled to room temperature, and the calcined product was soaked in the mixed acid of hydrofluoric acid and hydrochloric acid, the molar ratio of hydrofluoric acid and hydrochloric acid was 0.5:1, and the mixed acid treatment time was 4 hours, and washed off The unreacted silicon dioxide was washed with deionized water until pH = 7, and then dried at 80° C. to obtain silicon carbide nanotubes.
实施例3Example 3
在65℃水浴下向含有10g埃洛石的悬浊液中滴加含10mmol的八烷基三甲基溴化铵溶液,八烷基三甲基溴化铵溶液的浓度为2mol/L,滴加过程中连续搅拌,滴加完毕后再滴加丙酮9mL,滴加完毕后于相同条件下继续搅拌3h,离心分离,将得到的固体物用去离子水洗涤5次,105℃下烘干,将固体物碾磨成80目的粉末,在该过程中阳离子表面活性剂通过静电作用被作为单分子固定到埃洛石表面;将粉末置于管式炉中通N2保护,在800℃下碳化6h,再持续通N2冷却至室温,有机物被高温碳化,在埃洛石表面形成炭质层;将碳化后的固体物3g放入瓶中,加入10mL浓度为30%的盐酸溶液,搅拌30h,溶解掉埃洛石中的铝氧结构,固液分离,用去离子水清洗,70℃恒温干燥6h,得到碳层包覆的氧化硅的碳硅结合颗粒;将碳硅结合颗粒置于管式炉中,在氩气保护下,以升温速率为15℃/min升温至600℃,恒温120min,继续升温,速率为15℃/min,升温至1500℃,恒温360min,然后降温至400℃,通入空气,煅烧120min,冷却至室温,将煅烧后的产物浸泡于氢氟酸与盐酸的混合酸中,氢氟酸与盐酸的摩尔比为5:1,混合酸处理时间为24h,清洗掉未反应二氧化硅,用去离子水洗涤至pH=7后,105℃烘干,得到碳化硅纳米管。In a water bath at 65°C, add 10 mmol of octaalkyltrimethylammonium bromide solution dropwise to the suspension containing 10 g of halloysite, the concentration of octaalkyltrimethylammonium bromide solution is 2 mol/L, drop Stir continuously during the addition process, then add 9 mL of acetone dropwise after the dropwise addition, continue to stir for 3 h under the same conditions after the dropwise addition, centrifuge, wash the obtained solid with deionized water for 5 times, and dry at 105°C. The solid is ground into 80-mesh powder, during which the cationic surfactant is fixed to the surface of halloysite as a single molecule through electrostatic interaction; the powder is placed in a tube furnace and protected by N2 , and carbonized at 800°C 6h, and then continue to pass N2 to cool to room temperature, the organic matter is carbonized at high temperature, and a carbonaceous layer is formed on the surface of the halloysite; put 3g of the carbonized solid matter into a bottle, add 10mL of 30% hydrochloric acid solution, and stir for 30h , dissolve the aluminum-oxygen structure in the halloysite, separate the solid from the liquid, wash with deionized water, and dry at a constant temperature of 70°C for 6 hours to obtain carbon-silicon-bonded particles of silicon oxide coated with a carbon layer; place the carbon-silicon-bonded particles in a tube In the type furnace, under the protection of argon, the temperature was raised to 600°C at a heating rate of 15°C/min, and the temperature was kept constant for 120 minutes. Air was introduced, calcined for 120 minutes, cooled to room temperature, and the calcined product was soaked in the mixed acid of hydrofluoric acid and hydrochloric acid, the molar ratio of hydrofluoric acid and hydrochloric acid was 5:1, and the mixed acid treatment time was 24 hours, and washed off The unreacted silicon dioxide was washed with deionized water until pH = 7, and then dried at 105° C. to obtain silicon carbide nanotubes.
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