CN105206902A - UHF, L and Ku band mixed miniature microwave filter group - Google Patents

Abstract

The invention discloses an UHF, L and Ku band mixed miniature microwave filter group which comprises a single-pole three-throw switch chip WKD101A000200 and three microwave filters in different frequency bands, and is realized by adopting the multilayer low-temperature co-firing ceramics technology. The UHF, L and Ku band mixed miniature microwave filter group has the advantages of being easy to debug, light in weight, small in size, high in reliability, good in electrical performance, good in temperature stability, good in electrical performance batch consistency, low in cost and capable of being in large batch production and the like, and is suitable for the occasions and corresponding systems having strict requirements for size, electrical performance, temperature stability and reliability of the corresponding microwave frequency band communication and satellite communication and the like.

Description

A Mixed UHF, L and Ku Band Miniature Microwave Filter Bank

technical field

The invention relates to a filter group, which are UHF band micro-wave filter, L-band micro-wave filter and Ku-band micro-filter respectively.

Background technique

In recent years, with the rapid development of miniaturization of mobile communication, satellite communication and national defense electronic systems, high performance, low cost and miniaturization have become the development direction of the microwave/radio frequency field. The performance, size and reliability of microwave filters Both sex and cost have put forward higher requirements. The main indicators describing the performance of this component are: passband operating frequency range, stopband frequency range, passband insertion loss, stopband attenuation, passband input/output voltage standing wave ratio, insertion phase shift and delay frequency characteristics, temperature Stability, size, weight, reliability, etc. Filters with different frequencies are connected through switches to form a filter bank, which can expand the scope of use of the filter.

Low-temperature co-fired ceramics is an electronic packaging technology. Using multilayer ceramic technology, passive components can be built inside the dielectric substrate, and active components can also be mounted on the surface of the substrate to form passive/active integration functions. module. LTCC technology has many advantages in terms of cost, integrated packaging, wiring line width and line spacing, low impedance metallization, design diversity and flexibility, and high frequency performance, and has become the mainstream technology of passive integration. It has the advantages of high Q value, easy to embed passive devices, good heat dissipation, high reliability, high temperature resistance, shock resistance, etc., using LTCC technology, it can be well processed into small size, high precision, good compactness, low loss small microwave devices. Because LTCC technology has the advantages of three-dimensional integration, it is widely used in the microwave frequency band to manufacture various microwave passive components to achieve high integration of passive components. The stacking technology based on the LTCC process can realize three-dimensional integration, so that various micro microwave filters have many advantages such as small size, light weight, excellent performance, high reliability, good consistency in mass production performance, and low cost. The characteristics of three-dimensional integrated structure can realize the miniature microwave filter bank.

Contents of the invention

The object of the present invention is to provide a strip line structure that realizes small volume, light weight, high reliability, excellent electrical performance, convenient use, wide application range, high yield, good batch consistency, low cost, and stable temperature performance. miniature microwave filter bank.

The technical solution for realizing the object of the present invention is: a micro microwave filter group of mixed UHF, L and Ku bands , which includes a single-pole three-throw switch chip WKD101A000200 and three microwave filters. The first microwave filter includes a surface-mounted 50-ohm impedance first input port, a first part of the parallel resonant unit, a first zero-point capacitor, a second part of the series resonant unit, a second zero-point capacitor, and a third part of the parallel resonant unit, The third zero-point capacitor, the fourth part of the series resonant unit, the fourth zero-point capacitor and the 50 ohm impedance output port of the surface mount; the input port is connected to the first part of the parallel resonant unit, wherein the first part of the parallel resonant unit is composed of the first inductor, The first capacitor is connected in parallel, and the first capacitor is arranged in parallel below the first inductor; the first zero-point capacitor is connected to the ground in series with the first part of the parallel resonant unit, and the first zero-point capacitor is arranged in parallel below the first capacitor; the second part The series resonant unit is connected to the input port, wherein the second part of the series resonant unit is composed of a second inductance and a second capacitor in series, and the second capacitor is arranged in parallel below the second inductance; the second zero-point capacitor and the second part of the series resonant unit Parallel connection, and the second zero-point capacitance is arranged in parallel under the second inductance, on the same plane as the second capacitance; the third part of the parallel resonance unit is connected to the second capacitance in the second part of the series resonance unit, wherein the third part is connected in parallel The resonant unit is composed of a third inductance and a third capacitor connected in parallel, and the third capacitor is arranged in parallel above the third inductance; the third zero-point capacitor is connected in series with the third part of the parallel resonant unit, and the third zero-point capacitor is arranged in parallel on the first Above the three capacitors; the fourth part of the series resonant unit is connected to the second capacitor in the second part of the series resonant unit, wherein the fourth part of the series resonant unit is composed of a fourth inductance and a fourth capacitor in series, and the fourth capacitor is arranged in parallel on the first Above the four inductors; the fourth zero point capacitor is connected in parallel with the fourth part of the series resonant unit, and the fourth zero point capacitor is arranged in parallel above the fourth inductor and on the same plane as the fourth capacitor; the output port is connected to the fourth capacitor; Wherein, the first inductor, the second inductor, the third inductor and the fourth inductor are all rectangular spiral inductors, and the first capacitor, the second capacitor, the third capacitor and the fourth capacitor are all parallel plate capacitors.

The second microwave filter includes a surface mount 50 ohm impedance second input port, a first input inductor, a fifth resonator, a sixth resonator, a seventh resonator, an eighth resonator, a first output inductor, a first Z-shaped interstage coupling stripline, surface mount 50 ohm impedance second output port and ground. Wherein, the fifth resonator is formed by connecting the fifth coil and the fifth capacitor in parallel, one end of the fifth coil is connected with one end of the fifth capacitor, and the other end of the fifth coil and the other end of the fifth capacitor are respectively grounded; the sixth resonant The resonator is formed by connecting the sixth coil and the sixth capacitor in parallel, one end of the sixth coil is connected to one end of the sixth capacitor, the other end of the sixth coil is connected to the other end of the sixth capacitor respectively; the seventh resonator is composed of the seventh coil It is formed in parallel with the seventh capacitor, one end of the seventh coil is connected to one end of the seventh capacitor, and the other end of the seventh coil is connected to the other end of the seventh capacitor respectively; the eighth resonator is connected in parallel by the eighth coil and the eighth capacitor One end of the eighth coil is connected to one end of the eighth capacitor, and the other end of the eighth coil and the other end of the eighth capacitor are respectively grounded; the fifth coil, the sixth coil, the seventh coil, and the eighth coil are two Layered rectangular spiral coil structure, the fifth capacitor, the sixth capacitor, the seventh capacitor, and the eighth capacitor are all double-layer metal plate structures. The surface mount 50 ohm impedance second input port is connected to the left end of the first input inductor, the right end of the first input inductor is connected to the fifth coil and the fifth capacitor, and the surface mount 50 ohm impedance second output port is connected to the first input inductor. The right end of the first output inductance is connected, the left end of the first output inductance is connected with the eighth coil and the eighth capacitor, and the first Z-shaped interstage coupling stripline is located at the fifth resonator, the sixth resonator, the seventh resonator, above the eighth resonator.

The third microwave filter includes a surface-mounted 50-ohm impedance third input port, a second input inductance, a first-level parallel resonance unit, a second-level parallel resonance unit, a third-level parallel resonance unit, and a fourth-level parallel resonance unit , a fifth-level parallel resonance unit, a second output inductor, a second Z-shaped inter-stage coupling stripline, a surface-mounted 50-ohm impedance second output port and a ground terminal. All levels of parallel resonant units are composed of two layers of striplines. The first layer of striplines is vertically located above the second layer of striplines. The second stripline is connected in parallel, the second parallel resonant unit is formed by parallel connection of the third stripline of the first layer and the fourth stripline of the second layer, and the third parallel resonant unit is composed of the first layer The fifth stripline of the first layer and the sixth stripline of the second layer are connected in parallel, and the fourth-level parallel resonant unit is formed by the seventh stripline of the first layer and the eighth stripline of the second layer in parallel. The fifth-level parallel resonance unit is composed of the ninth stripline on the first layer and the tenth stripline on the second layer in parallel, wherein the left end of the second input inductance is connected to the third input port of the surface-mounted 50-ohm impedance , the second stripline of the second layer of the first-level parallel resonant unit is connected to the right end of the second input inductance, and the tenth stripline of the second layer of the fifth-level parallel resonant unit is connected to the left end of the second output inductance. The right end of the second output inductor is connected to the third output port of the surface mounted 50 ohm impedance, and the second Z-shaped interstage coupling stripline is located under the parallel resonance unit. The five levels of parallel resonant units are grounded separately, in which all striplines in the first layer have the same grounding end, one end is grounded and the other end is open circuited, and the grounding end of the second layer striplines is the same, one end is grounded and the other end is open circuited, and the direction of the grounding end is the same as that of the first layer The ground terminal of the first layer is opposite, and both ends of the second Z-shaped inter-stage coupling stripline are grounded. RFOut1 of single-pole three-throw switch chip WKD102A000200 is connected to the first input port of surface mount 50 ohm impedance, RFOut2 is connected to the second input port of surface mount 50 ohm impedance, RFOut3 is connected to the third input port of surface mount 50 ohm impedance connect.

Compared with the prior art, since the present invention uses low-loss low-temperature co-fired ceramic materials and three-dimensional integration, the significant advantages brought about are: (1) In-band flatness; (2) The same signal waveform at different frequencies can be generated; (3) Small size, light weight, and high reliability; (4) Excellent electrical performance; (5) The circuit realizes a simple structure and can be mass-produced; (6) Low cost.

Description of drawings

Figure 1 ( a) is a schematic diagram of the appearance and structure of a UHF, L and Ku band micro-wave filter bank of the present invention.

Fig. 1 ( b) is a schematic diagram of the appearance and internal structure of the first microwave filter in a UHF, L and Ku band miniature microwave filter bank of the present invention.

Fig. 1 ( c) is a schematic diagram of the appearance and internal structure of the second microwave filter in a UHF, L and Ku band miniature microwave filter bank of the present invention.

Figure 1 ( d) is a schematic diagram of the appearance and internal structure of the third microwave filter in a UHF, L and Ku band micro-wave filter bank of the present invention.

Fig. 2 is the amplitude-frequency characteristic curve of the output port and the standing wave characteristic curve of the input port when a kind of UHF, L and Ku band miniature microwave filter group of the present invention connects the first microwave filter.

Fig. 3 is the amplitude-frequency characteristic curve of the output port and the standing wave characteristic curve of the input port when a kind of UHF, L and Ku band miniature microwave filter group of the present invention connects the second microwave filter.

Fig. 4 is the amplitude-frequency characteristic curve of the output port and the standing wave characteristic curve of the input port when a kind of UHF, L and Ku band miniature microwave filter group of the present invention connects the 3rd microwave filter.

Detailed ways

The present invention will be described in further detail below in conjunction with the accompanying drawings .

Combined with Fig. 1 ( a), (b), (c), a UHF, L and Ku band miniature microwave filter bank of the present invention, the first microwave filter F1 includes a surface-mounted 50 ohm impedance input port P1, the second Part of parallel resonant unit L1, C1, first zero-point capacitor C11, second part of series resonant unit L2, C2, second zero-point capacitor C22, third part of parallel resonant unit L3, C3, third zero-point capacitor C33, first The four-part series resonant unit L4, C4, the fourth zero-point capacitor C44 and the surface-mounted 50-ohm impedance output port P2; the input port P1 is connected to the first part of the parallel resonant unit L1, C1, wherein the first part of the parallel resonant unit L1, C1 It is composed of the first inductor L1 and the first capacitor C1 connected in parallel, and the first capacitor C1 is arranged in parallel below the first inductor L1; the first zero-point capacitor C11 is connected in series with the first part of the parallel resonant unit L1, C1 and grounded, and the first zero point The capacitor C11 is arranged in parallel below the first capacitor C1; the second part of the series resonant unit L2, C2 is connected to the input port P1, wherein the second part of the series resonant unit L2, C2 is composed of the second inductor L2 and the second capacitor C2 in series, The second capacitor C2 is arranged in parallel below the second inductance L2; the second zero-point capacitor C22 is connected in parallel with the second part of the series resonance unit L2, C2, and the second zero-point capacitor C22 is arranged in parallel below the second inductance L2, and The second capacitor C2 is on the same plane; the third part of the parallel resonant unit L3, C3 is connected to the second capacitor C2 in the second part of the series resonant unit L2, C2, wherein the third part of the parallel resonant unit L3, C3 is connected by the third inductance L3 , The third capacitor C3 is connected in parallel, the third capacitor C3 is arranged in parallel above the third inductor L3; the third zero point capacitor C33 is connected in series with the third part of the parallel resonant unit L3, C3 to ground, and the third zero point capacitor C33 is arranged in parallel Above the third capacitor C3; the fourth part of the series resonant unit L4, C4 is connected to the second capacitor C2 in the second part of the series resonant unit L2, C2, wherein the fourth part of the series resonant unit L4, C4 is connected by the fourth inductance L4 , the fourth capacitor C4 in series, the fourth capacitor C4 is arranged in parallel above the fourth inductance L4; the fourth zero-point capacitor C44 is connected in parallel with the fourth part of the series resonant unit L4, C4, and the fourth zero-point capacitor C44 is arranged in parallel Above the fourth inductor L4 is on the same plane as the fourth capacitor C4; the output port P2 is connected to the fourth capacitor C4. Wherein, the first inductor L1, the second inductor L2, the third inductor L3 and the fourth inductor L4 are rectangular spiral inductors, and the first capacitor C1, the second capacitor C2, the third capacitor C3 and the fourth capacitor C4 are all It is a parallel plate capacitor.

The second microwave filter F2 includes a surface mounted 50 ohm impedance second input port P3, a first input inductance Lin1, a fifth resonator L5, C5, a sixth resonator L6, C6, a seventh resonator L7, C7, The eighth resonator L8, C8, the first output inductor Lout2, the first Z-shaped inter-stage coupling stripline Z1, the surface-mounted 50-ohm impedance second output port P4 and the ground terminal. Wherein, the fifth resonator L5 and C5 are formed by parallel connection of the fifth coil L5 and the fifth capacitor C5, one end of the fifth coil L5 is connected with one end of the fifth capacitor C5, and the other end of the fifth coil L5 is connected with the fifth capacitor C5 The other ends of each are grounded respectively; the sixth resonator L6 and C6 are formed by parallel connection of the sixth coil L6 and the sixth capacitor C6, one end of the sixth coil L6 is connected with one end of the sixth capacitor C6, and the other end of the sixth coil L6 is connected with the sixth capacitor C6. The other ends of the sixth capacitor C6 are respectively grounded; the seventh resonator L7 and C7 are formed by connecting the seventh coil L7 and the seventh capacitor C7 in parallel, one end of the seventh coil L7 is connected with one end of the seventh capacitor C7, and the seventh coil L3 The other end of and the other end of the seventh capacitor C7 are respectively grounded; the eighth resonator L8, C8 is formed by parallel connection of the eighth coil L8 and the eighth capacitor C8, and one end of the eighth coil L8 is connected with one end of the eighth capacitor C8, The other end of the eighth coil L8 and the other end of the eighth capacitor C8 are respectively grounded; the fifth coil L5, the sixth coil L6, the seventh coil L7, and the eighth coil L8 are all two-layer rectangular spiral coil structures, and the fifth capacitor C5 , the sixth capacitor C6, the seventh capacitor C7, and the eighth capacitor C8 are all double-layer metal plate structures. The surface-mounted 50-ohm impedance second input port P3 is connected to the left end of the first input inductor Lin1, and the right end of the first input inductor Lin1 is connected to the fifth coil L5 and the fifth capacitor C5. The surface-mounted 50-ohm impedance second The second output port P4 is connected to the right end of the first output inductor Lout1, the left end of the first output inductor Lout1 is connected to the eighth coil L8 and the eighth capacitor C8, and the second Z-shaped inter-stage coupling stripline Z2 is located in the fifth resonator L5, C5, sixth resonator L6, C6, seventh resonator L7, C7, eighth resonator L8, C8.

The third microwave filter F3 includes a surface-mounted 50-ohm impedance third input port P5, a second input inductance Lin2, a first-stage parallel resonant unit L11, L21, a second-stage parallel resonant unit L12, L22, a third-stage parallel Resonant units L13, L23, fourth-level parallel resonant units L14, L24, fifth-level parallel resonant units L15, L25, second output inductance Lout2, second Z-shaped inter-level coupling stripline Z2, surface-mounted 50-ohm impedance of the third output port P6 and ground. All levels of parallel resonant units are composed of two layers of striplines. The first layer of striplines is vertically located above the second layer of striplines. The first level of parallel resonant units L11 and L21 are composed of the first stripline L11 , the second stripline L21 of the second layer are connected in parallel, and the second-stage parallel resonant units L12, L22 are formed by parallel connection of the third stripline L12 of the first layer and the fourth stripline L22 of the second layer , the third-level parallel resonant unit L13, L23 is formed by parallel connection of the fifth stripline L13 of the first layer and the sixth stripline L23 of the second layer, and the fourth-level parallel resonant unit L14, L24 is formed by the first layer The seventh stripline L14 of the second layer and the eighth stripline L24 of the second layer are connected in parallel. The strip line L25 is connected in parallel, wherein the left end of the second input inductance Lin2 is connected to the third input port P5 of surface mount 50 ohm impedance, and the second strip line L21 of the second layer of the first-stage parallel resonant unit L11 and L21 It is connected to the right end of the second input inductance Lin2, the tenth strip line L25 of the second layer of the fifth-level parallel resonant unit L12, L25 is connected to the left end of the second output inductance Lout2, and the right end of the second output inductance Lout2 is connected to the surface-mounted 50 The ohmic impedance is connected to the third output port P6, and the second Z-shaped inter-stage coupling stripline Z2 is located below the parallel resonance unit. The five levels of parallel resonant units are grounded separately, in which all striplines in the first layer have the same grounding end, one end is grounded and the other end is open circuited, and the grounding end of the second layer striplines is the same, one end is grounded and the other end is open circuited, and the direction of the grounding end is the same as that of the first layer The ground terminal of the first layer is opposite, and both ends of the second Z-shaped inter-stage coupling stripline Z2 are grounded. The RFOut1 of the single-pole three-throw switch chip WKD102A000200 is connected to the surface-mounted 50-ohm impedance first input port P1, RFOut2 is connected to the surface-mounted 50-ohm impedance second input port P3, and RFOut3 is connected to the surface-mounted 50-ohm impedance third input port Input port P5 connection.

Combined with Figure 1a , b, c, surface mount 50 ohm impedance input ports P1, P3, P5, surface mount 50 ohm impedance output ports P2, P4, P6, input inductance Lin1, Lin2, output inductance Lout1, Lout2, Capacitors C1, C2, C3, C4, C5, C6, C7, C8, zero-point capacitors C11, C22, C33, C44, coils L1, L2, L3, L4, L5, L6, L7, L8, first-stage parallel resonance unit L11, L21, second-level parallel resonant unit L12, L22, third-level parallel resonant unit L13, L23, fourth-level parallel resonant unit L14, L24, fifth-level parallel resonant unit L15, L25, Z-shaped inter-level coupling strip The shape lines Z1, Z2 and the ground terminal are all realized by multi-layer low temperature co-fired ceramic technology.

A UHF, L and Ku band miniature microwave filter group is realized by multi-layer low-temperature co-fired ceramic technology. Reliability and temperature stability, because the structure adopts three-dimensional integration and multi-layer folding structure, and the outer surface metal shielding realizes grounding and packaging, so that the volume is greatly reduced.

The WKD102A000200 chip is a low insertion loss voltage-controlled reflective single-pole three-throw switch chip, which is manufactured using a gallium arsenide pseudo-high electron mobility transistor process with a gate length of 0.25 microns. The chip is grounded through the back metal through the through hole . All chip products are 100% radio frequency measured. WKD102010040 chip works with 0/-5V power supply, insertion loss in DC~20GHz: 2dB, isolation: 50dB, input standing wave ratio: 1.4:1, output standing wave ratio: 1.4:1, switching time: 10ns.

The sizes of the three microwave filters in the UHF, L and Ku band miniature microwave filters of the present invention are all 3.2mm×3.2mm×1.5mm. Its performance can be seen from Fig. 2 , Fig. 3 and Fig. 4. The passband bandwidth of the first microwave filter is 80MHz~140MHz, the return loss of the input port is better than 9.3dB, and the insertion loss of the output port is better than 5.6dB. When , the other two band filter isolation is roughly the same as 43dB and 44dB respectively. The passband bandwidth of the second microwave filter is 750MHz~1060MHz, the return loss of the input port is better than 9.2dB, and the insertion loss of the output port is better than 4.8dB. 59dB. The passband bandwidth of the third microwave filter is 13.5GHz~16GHz, the return loss of the input port is better than 11.3dB, and the insertion loss of the output port is better than 4.5dB. At this time, the isolation of the other two band filters is roughly the same, respectively 48dB and 50dB.

Claims (3)

1. mix UHF, L and Ku wave band miniature microwave filter group, it is characterized in that: comprise SP3T switch chip WKD101A000200 and three microwave filter, first microwave filter (F1) comprises surface-pasted 50 ohmage input ports (P1), Part I parallel resonance unit (L1, C1), first zero electric capacity (C11), Part II series resonance unit (L2, C2), second minimum capacity (C22), Part III parallel resonance unit (L3, C3), 3rd minimum capacity (C33), Part IV series resonance unit (L4, C4), four-zero point electric capacity (C44) and surface-pasted 50 ohmage output ports (P2),

Input port (P1) is connected with Part I parallel resonance unit (L1, C1), wherein Part I parallel resonance unit (L1, C1) is composed in parallel by the first inductance (L1), the first electric capacity (C1), and the first electric capacity (C1) is set in parallel in the below of the first inductance (L1); First zero electric capacity (C11) is connected with Part I parallel resonance unit (L1, C1) ground connection, and first zero electric capacity (C11) is set in parallel in the below of the first electric capacity (C1); Part II series resonance unit (L2, C2) is connected with input port (P1), wherein Part II series resonance unit (L2, C2) is composed in series by the second inductance (L2), the second electric capacity (C2), and the second electric capacity (C2) is set in parallel in the below of the second inductance (L2); Second minimum capacity (C22) is in parallel with Part II series resonance unit (L2, C2), and the second minimum capacity (C22) is set in parallel in the below of the second inductance (L2), with the second electric capacity (C2) at same plane; Part III parallel resonance unit (L3, C3) is connected with the second electric capacity (C2) in Part II series resonance unit (L2, C2), wherein Part III parallel resonance unit (L3, C3) is composed in parallel by the 3rd inductance (L3), the 3rd electric capacity (C3), and the 3rd electric capacity (C3) is set in parallel in the top of the 3rd inductance (L3); 3rd minimum capacity (C33) is connected with Part III parallel resonance unit (L3, C3) ground connection, and the 3rd minimum capacity (C33) is set in parallel in the top of the 3rd electric capacity (C3); Part IV series resonance unit (L4, C4) is connected with the second electric capacity (C2) in Part II series resonance unit (L2, C2), wherein Part IV series resonance unit (L4, C4) is composed in series by the 4th inductance (L4), the 4th electric capacity (C4), and the 4th electric capacity (C4) is set in parallel in the top of the 4th inductance (L4); Four-zero point electric capacity (C44) is in parallel with Part IV series resonance unit (L4, C4), and four-zero point electric capacity (C44) is set in parallel in the top of the 4th inductance (L4), with the 4th electric capacity (C4) at same plane; Output port (P2) is connected with the 4th electric capacity (C4);

Wherein, described first inductance (L1), the second inductance (L2), the 3rd inductance (L3) and the 4th inductance (L4) are rectangular coil formula inductance, and the first electric capacity (C1), the second electric capacity (C2), the 3rd electric capacity (C3) and the 4th electric capacity (C4) are run-in index capacity plate antenna;

Second microwave filter comprises surface-pasted 50 ohmage second input ports (P3), the first input inductance (Lin1), the 5th resonator (L5, C5), sixth resonator (L6, C6), the 7th resonator (L7, C7), the 8th resonator (L8, C8), the first outputting inductance (Lout1), the first Z-shaped interstage coupling strip line (Z1), surface-pasted 50 ohmage second output port (P4) and earth terminals, wherein, 5th resonator (L5, C5) is formed in parallel by the 5th coil (L5) and the 5th electric capacity (C5), one end of 5th coil (L5) is connected with one end of the 5th electric capacity (C5), the other end of the 5th coil (L5) and the other end of the 5th electric capacity (C5) ground connection respectively, sixth resonator (L6, C6) is formed in parallel by the 6th coil (L6) and the 6th electric capacity (C6), one end of 6th coil (L6) is connected with one end of the 6th electric capacity (C6), the other end of the 6th coil (L6) and the other end of the 6th electric capacity (C6) ground connection respectively, 7th resonator (L7, C7) is formed in parallel by the 7th coil (L7) and the 7th electric capacity (C7), one end of 7th coil (L7) is connected with one end of the 7th electric capacity (C7), the other end of the 7th coil (L7) and the other end of the 7th electric capacity (C7) ground connection respectively, 8th resonator (L8, C8) is formed in parallel by the 8th coil (L8) and the 8th electric capacity (C8), one end of 8th coil (L8) is connected with one end of the 8th electric capacity (C8), the other end of the 8th coil (L8) and the other end of the 8th electric capacity (C8) ground connection respectively, 5th coil (L5), the 6th coil (L6), the 7th coil (L7), the 8th coil (L8) are two-layer square spiral coil structure, and the 5th electric capacity (C5), the 6th electric capacity (C6), the 7th electric capacity (C7), the 8th electric capacity (C8) are double-level-metal plate structure, surface-pasted 50 ohmage second input ports (P3) are connected with the first left end inputting inductance (Lin1), the right-hand member of the first input inductance (Lin1) is connected with the 5th electric capacity (C5) with the 5th coil (L5), surface-pasted 50 ohmage second output ports (P4) are connected with the right-hand member of the first outputting inductance (Lout1), the left end of the first outputting inductance (Lout1) is connected with the 8th electric capacity (C8) with the 8th coil (L8), first Z-shaped interstage coupling strip line (Z1) is positioned at the 5th resonator (L5, C5), sixth resonator (L6, C6), 7th resonator (L7, C7), 8th resonator (L8, C8) on,

3rd microwave filter (F3) comprises surface-pasted 50 ohmages the 3rd input port (P5), second input inductance (Lin2), first order parallel resonance unit (L11, L21), second level parallel resonance unit (L12, L22), third level parallel resonance unit (L13, L23), fourth stage parallel resonance unit (L14, L24), level V parallel resonance unit (L15, L25), second outputting inductance (Lout2), second Z-shaped interstage coupling strip line (Z2), surface-pasted 50 ohmages the 3rd output port (P6) and earth terminal, parallel resonance unit at different levels forms by two-layer strip line, ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L11, L21) by first strip line (L11) of ground floor, second strip line (L21) of the second layer is formed in parallel, second level parallel resonance unit (L12, L22) by the 3rd strip line (L12) of ground floor, 4th strip line (L22) of the second layer is formed in parallel, third level parallel resonance unit (L13, L23) by the 5th strip line (L13) of ground floor, 6th strip line (L23) of the second layer is formed in parallel, fourth stage parallel resonance unit (L14, L24) by the 7th strip line (L14) of ground floor, 8th strip line (L24) of the second layer, be formed in parallel, level V parallel resonance unit (L15, L25) by the 9th strip line (L15) of ground floor, tenth strip line (L25) of the second layer is formed in parallel, wherein, second input inductance (Lin2) left end is connected with surface-pasted 50 ohmages the 3rd input port (P5), first order parallel resonance unit (L11, second strip line (L21) and second of the second layer L21) inputs inductance (Lin2) right-hand member and is connected, level V parallel resonance unit (L15, tenth strip line (L25) of the second layer L25) is connected with the second outputting inductance (Lout2) left end, second outputting inductance (Lout2) right-hand member is connected with surface-pasted 50 ohmages the 3rd output port (P6), second Z-shaped interstage coupling strip line (Z2) is positioned at below parallel resonance unit,

Pyatyi parallel resonance unit is ground connection respectively, wherein ground floor all strip lines earth terminal is identical, one end ground connection, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line (Z2) two ends; The RFOut1 of SP3T switch chip WKD101A000200 is connected with surface-pasted 50 ohmage first input end mouths (P1), RFOut2 is connected with surface-pasted 50 ohmage second input ports (P3), and RFOut3 is connected with surface-pasted 50 ohmages the 3rd input port (P5).

2. mixing UHF according to claim 1, L and Ku wave band miniature microwave filter group, it is characterized in that: surface-pasted 50 ohmage input port (P1, P3, P5), surface-pasted 50 ohmage output port (P2, P4, P6), input inductance (Lin1, Lin2), outputting inductance (Lout1, Lout2), electric capacity (C1, C2, C3, C4, C5, C6, C7, C8), minimum capacity (C11, C22, C33, C44), coil (L1, L2, L3, L4, L5, L6, L7, L8), first order parallel resonance unit (L11, L21), second level parallel resonance unit (L12, L22), third level parallel resonance unit (L13, L23), fourth stage parallel resonance unit (L14, L24), level V parallel resonance unit (L15, L25), Z-shaped interstage coupling strip line (Z1, Z2) and earth terminal all adopt multilayer LTCC technique to realize.

3. mixing UHF according to claim 1 and 2, L and Ku wave band miniature microwave filter group, it is characterized in that: first input end mouth (P1) directly with the first inductance (L1), first electric capacity (C1) is connected, first output port (P2) directly with the 4th inductance (L4), 4th electric capacity (C4) is connected, second input port (P3) is connected with the 5th electric capacity (C5) and the 5th coil (L5) by the first input inductance (Lin1), second output port (P4) is connected with the 8th electric capacity (C8) and the 8th coil (L8) by the first outputting inductance (Lout1), 3rd input port (P5) is by the second input inductance (Lin2) and first order parallel resonance unit (L11, second strip line (L21) of the second layer L21) connects, 3rd output port (P6) is by the second outputting inductance (Lout2) and level V parallel resonance unit (L15, tenth strip line (L25) of the second layer L25) connects.