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CN105190838B - 半导体用复合基板的操作基板以及半导体用复合基板 - Google Patents

半导体用复合基板的操作基板以及半导体用复合基板 Download PDF

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Publication number
CN105190838B
CN105190838B CN201580000420.2A CN201580000420A CN105190838B CN 105190838 B CN105190838 B CN 105190838B CN 201580000420 A CN201580000420 A CN 201580000420A CN 105190838 B CN105190838 B CN 105190838B
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Prior art keywords
substrate
crystal grains
average grain
grain size
outer peripheral
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CN105190838A (zh
Inventor
宫泽杉夫
岩崎康范
高垣达朗
井出晃启
中西宏和
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NGK Insulators Ltd
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NGK Insulators Ltd
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Abstract

半导体用复合基板的操作基板(1)由多晶氧化铝形成，操作基板(1)的外周边缘部(8)的晶粒的平均粒径为20～55μm，操作基板的中央部(20)的晶粒的平均粒径为10～50μm，操作基板的外周边缘部(8)的晶粒的平均粒径为中央部(20)的晶粒的平均粒径的1.1倍以上、3.0倍以下。

Description

半导体用复合基板的操作基板以及半导体用复合基板
技术领域
本发明涉及半导体用复基板的操作基板以及半导体用复合基板。
背景技术
以具备高绝缘性、低介质损耗、高热导率等特征的蓝宝石为基底基板、其表面形成有用于构成半导体器件的硅薄膜的贴合基板，即所谓的SOS基板，被用于高频开关IC等。以前，在基底基板上通过外延生长形成硅层的方法是主流，但近年来，开发了直接接合形成的方法，对半导体器件的性能改善有所帮助(专利文献1、2、3)。
此外，伴随接合技术的进步，也提出了蓝宝石以外的基底基板的各种提案。其中，以往用作高亮度放电灯用的发光管和半导体制造装置的仿真晶圆的多晶透光性氧化铝，通过使用高纯度原料、在高温的还原气氛下致密烧成，具有与蓝宝石同等的高绝缘性、低介质损耗、高热导率等良好特性，同时具有无需高成本的结晶培养工序的优点(专利文献4、5、6)。
将基底基板与硅层直接接合、制作贴合基板时，由于基底基板与硅层的热膨胀差等原因，有时恐怕会出现外周部的附着性不充分、接合后的机械加工、蚀刻过程中会出现剥离(专利文献7、8)。
现有技术文献
专利文献
【专利文献1】日本专利特开平08-512432
【专利文献2】日本专利特开2003-224042
【专利文献3】日本专利特开2010-278341
【专利文献4】WO2010/128666
【专利文献5】日本专利特开平05-160240
【专利文献6】日本专利特开平11-026339
【专利文献7】日本专利特开2011-071487
【专利文献8】日本专利特开2011-159955
发明内容
操作基板的接合面上的粒径变大的话，单位面积的晶界数变少，不易受到表面露出粒子引起的高低差的影响，因此与施主基板的附着强度变高，在后续工序中不易剥离。但是，此时，操作基板的强度下降，变得容易开裂。另一方面，操作基板的接合面上的粒子变小的话，操作基板的强度上升，变得不易开裂，但是在后续工序中容易与施主基板剥离。
本发明的课题是，由多晶氧化铝构成的操作基板中，在抑制从施主基板剥离的同时，抑制开裂的产生。
本发明是一种半导体用复合基板的操作基板，其特征在于，
操作基板由多晶氧化铝形成，操作基板的外周边缘部的晶粒的平均粒径为20～55μm，操作基板的中央部的晶粒的平均粒径为10～50μm，操作基板的外周边缘部的晶粒的平均粒径为所述中央部的晶粒的平均粒径的1.1倍以上、3.0倍以下。
此外，本发明涉及一种半导体用复合基板，其特征在于，具有所述操作基板、以及接合在所述操作基板的接合面上的施主基板。
根据本发明，可以提升操作基板对于施主基板的附着性、抑制剥离，同时也可以提高操作基板的强度、抑制开裂。
特别是，通过使操作基板的外周边缘部的粒径相对变大，可以改善外周边缘部上与施主基板的附着性。该效果之所以显著，是因为施主基板的剥离主要发展自外周边缘部，因此改善操作基板的外周边缘部的附着性是有效的。同时，使操作基板中央部的粒径相对变小、改善强度，对于抑制操作基板整体的开裂是极有效果的。
附图说明
【图1】
(a)是操作基板1的正面图，(b)是显示操作基板1与施主基板5介由接合层4接合的半导体用复合基板6的正面图，(c)是显示操作基板1与施主基板5直接接合的半导体用复合基板6A的正面图。
【图2】
显示平均粒径的计算方式例的模式图。
【图3】
(a)是显示晶圆状的基板1的平面图，(b)是显示基板1的外周边缘部的图。
【图4】
显示用于烧成成形体11的承烧板的模式图。
【图5】
显示烧结体退火处理状态的模式图。
具体实施方式
以下适当参照附图，更详细地说明本发明。
(用途)
本发明的复合基板可用于投影仪用发光元件、高频器件、高性能激光器、功率器件、逻辑IC等。
(施主基板)
复合基板包含本发明的操作基板和施主基板。
施主基板的材质并无特别限定，但优选从硅、氮化铝、氮化镓、氧化锌及金刚石构成的群中选择。
施主基板具有上述的材质，表面也可具有氧化膜。这是由于，通过氧化膜进行离子注入的话，可以得到抑制注入离子的沟道效应的效果。氧化膜优选具有50～500nm的厚度。具有氧化膜的施主基板也包含于施主基板，只要没有特别区分，都称为施主基板。
(操作基板)
如图1、图3所示，操作基板1例如为圆形，形成有一处切口7。图3(a)所示的切口7为U字形，但也可以是V字形。这些切口在进行半导体器件制造工序中的各项操作时用于进行晶圆位置或方向的检测等。特别是8英寸以上尺寸的晶圆中，作为一般的检测方法引入，以替代定向平面。当然，也可以用定向平面替代切口。
在晶圆状的基板1的外周边缘部8的边缘，设置有所谓的斜面部9(图3(b))。斜面部形成在接合面1a侧及背面1b侧等两方。斜面部指的是，晶圆的端面以及边缘的倾斜部分。
本发明中，操作基板由多晶氧化铝形成，操作基板的外周边缘部8的晶粒的平均粒径为20～55μm，操作基板的中央部20的晶粒的平均粒径为10～50μm，操作基板的外周边缘部8的晶粒的平均粒径为中央部20的晶粒的平均粒径的1.1倍以上、3.0倍以下。
通过使操作基板的外周边缘部的晶粒的平均粒径在20μm以上，与施主基板的附着性提升。基于此观点，优选操作基板的外周边缘部的晶粒的平均粒径在25μm以上，更优选30μm以上。
通过使操作基板的外周边缘部的晶粒的平均粒径在55μm以下，可以抑制开裂。基于此观点，更优选操作基板的外周边缘部的晶粒的平均粒径在50μm以下。
通过使操作基板的中央部20的晶粒的平均粒径在10μm以上，与施主基板的附着性提升。基于此观点，优选操作基板的中央部的晶粒的平均粒径在15μm以上，更优选20μm以上。此外，通过使操作基板的中央部20的晶粒的平均粒径在50μm以下，可以抑制开裂。基于此观点，优选操作基板的中央部的晶粒的平均粒径在45μm以下，更优选35μm以下。
通过使操作基板的外周边缘部8的晶粒的平均粒径在中央部20的晶粒的平均粒径的1.1倍以上，可以抑制操作基板的剥离。基于此观点，更优选操作基板的外周边缘部8的晶粒的平均粒径在中央部20的晶粒的平均粒径的1.3倍以上。此外，操作基板的外周边缘部8的晶粒的平均粒径过多地大于中央部20的晶粒的平均粒径的话，中间部21容易产生微开裂，因此优选3.0倍以下。基于此观点，更优选操作基板的外周边缘部8的晶粒的平均粒径在中央部20的晶粒的平均粒径的2.8倍以下。
在这里，晶粒的平均粒径如下测定。
(1)将操作基板的截面进行镜面研磨，热蚀刻而使晶界变得清晰之后，拍摄显微镜照片(100～200倍)，数出单位长度的直线横穿过的粒子数。显微镜照片拍摄的是从接合面起100μm的范围。对不同的3处进行此项操作。另外，单位长度的范围是500μm～1000μm。(2)取这3处粒子的平均个数。
(3)通过下式算出平均粒径。
[计算式]
D＝(4/π)×(L/n)
[D：平均粒径，L：直线的单位长度，n：3处的平均粒子个数]
平均粒径的计算例如图2所示。不同的3处位置中，单位长度(例如500μm)的直线横穿过的粒子个数分别为22、23、19时，平均粒径D通过上述计算式为：
D＝(4/π)×[500/{(22+23+19)/3}]＝29.9μm。
操作基板的外周边缘部8表示的是，从操作基板1的边缘起、向着中心O的宽5mm的环状部分。此外，操作基板的中央部20表示的是，从中心O起的半径5mm的圆形部分。中间部21是位于中央部20和外周边缘部8之间的环状的中间部分。
中间部21的晶粒的平均粒径也优选为10～50μm。另外，中间部21的晶粒的平均粒径优选在15μm以上，更优选20μm以上。此外，中间部21的晶粒的平均粒径优选在45μm以下，更优选35μm以下。
此外，优选操作基板的外周边缘部8的晶粒的平均粒径为中间部21的晶粒的平均粒径的1.1倍以上、3.0倍以下。此外，更优选操作基板的外周边缘部8的晶粒的平均粒径在中间部21的晶粒的平均粒径的1.3倍以上，此外，更优选2.8倍以下。另外，优选中间部21的晶粒的平均粒径与中央部20的晶粒的平均粒径相同。
适宜的实施方式中，操作基板的接合面的表面粗糙度Ra在2nm以下。其较大的话，由于分子间力，会降低施主基板的接合强度。其最优选1nm以下。另外，该Ra是通过AFM(Atomic Force Microscope：原子间力电子显微镜)，对接合面的70μm×70μm的视野范围进行拍摄，根据JIS B0601算出的数值。
此外，氧化铝陶瓷的相对密度，基于对于半导体后处理的耐久性以及防止污染的观点，优选98％以上，更优选99％以上。
适宜的实施方式中，构成操作基板的多晶陶瓷烧结体，由纯度99.9％以上的陶瓷粉末为原料、通过烧结而制造。
透光性氧化铝的情况下，优选对于纯度99.9％以上(优选99.95％以上)的高纯度氧化铝粉末，添加100ppm以上、300ppm以下的氧化镁粉末。作为此种高纯度氧化铝粉末，可例示有大明化学工业株式会社制造的高纯度氧化铝粉体。此外，该氧化镁粉末的纯度优选99.9％以上，平均粒径优选0.3μm以下。
此外，适宜的实施方式中，作为烧结助剂，优选对于氧化铝粉末，添加氧化锆(ZrO2)200～800ppm、氧化钇(Y2O3)10～30ppm。
多晶陶瓷烧结体的成形方法并无特别限定，可以是刮刀法、挤出法、凝胶注模法等任意的方法。特别优选使用凝胶注模法制造半成品基板。
适宜的实施方式中，制造含有陶瓷粉末、分散介质以及凝胶剂的浆料，将该浆料进行注型，使其凝胶化，由此得到成形体。在这里，在凝胶成形阶段，在模具上涂布脱模剂，组合模具，将浆料进行注型。接着，使凝胶在模具内固化，得到成形体，将成形体脱模。接着将模具洗净。
接着，将凝胶成形体干燥，优选在大气中预烧，接着，在氢中正式烧成。正式烧成时的烧结温度，基于烧结体致密化的观点，优选1700～1900℃，更优选1750～1850℃。
适宜的实施方式中，如图4所示，将成形体(或其预烧体)11放置在承烧板12上，上面盖上由耐腐蚀性材料构成的盖子14。然后，在盖子14和承烧板12之间夹上垫片13，由此使得成形体11上生成缝隙22，促进烧结助剂(特别是镁)的排出。由此抑制粒子的粗大化。
此外，在烧成时生成充分致密的烧结体后，可以再追加实施退火处理，修正翘曲。该退火温度，基于防止变形或产生异常晶粒生长的同时促进烧结助剂排出的观点，优选在烧成时的最高温度±100℃以内，更优选最高温度在1900℃以下。此外，退火时间优选为1～6小时。
在这里，适宜的实施方式中，在烧结体的外周边缘部开放在环境气氛中，并且烧结体的中央部以及中间部未暴露于环境气氛中的状态下，进行退火处理。例如，如图5所示，在承烧板15上设置烧结体16，在烧结体16上放置覆盖物17，覆盖中央部以及中间部。通过在覆盖物17上设置重物18，使覆盖物17和烧结体16之间不产生缝隙。通过在此状态下对烧结体进行退火处理，促进了烧结助剂(特别是镁)从外周边缘部的露出部分19排出至环境气氛中，促进外周边缘部的晶粒生长，粒径变得相对较大。由于中央部以及中间部未暴露于环境气氛中，因此没有出现烧结助剂的排出，晶粒生长受到抑制。
这样的承烧板、覆盖物、重物的材质，只要对于处理时的气氛以及温度具有耐久性即可，可例示例如钼、钨、金属陶瓷、氮化硼、碳。
通过对如此得到的半成品基板进行精密研磨加工，减小其接合面的Ra。作为此种精密研磨加工，一般是CMP(Chemical Mechanical Polishing，化学机械抛光)加工。作为其中使用的研磨浆料，使用的是碱性或中性溶液中分散了30nm～200nm粒径的磨粒的研磨浆料。作为磨粒材质，可例示有，二氧化硅、氧化铝、金刚石、氧化锆、氧化铈，将它们单独或组合使用。此外，抛光垫可例示有，硬质聚氨酯抛光垫、无纺布抛光垫、麂皮绒抛光垫。
此外，理想的是在实施最终的精密研磨加工前的粗研磨加工实施后进行退火处理。退火处理的环境气体可例示有，大气、氢、氮、氩、真空。优选退火温度为1200～1600℃，退火时间为2～12小时。由此，可以无损表面的平滑而除去造成翘曲和坑的加工变质层。
(复合基板)
通过将操作基板和施主基板接合，得到复合基板。
作为接合所使用的技术，并无特别限定，可使用例如通过表面活性化而直接接合的技术、以及使用粘合层的基板接合技术。
直接接合适宜使用通过表面活性化进行的低温接合技术。在10-6Pa左右的真空状态下通过Ar气实施表面活性化后，Si等单晶材料可以在常温下介由SiO2等粘合层与多晶材料接合。
作为粘合层的例子，除了通过树脂粘合外，还可使用SiO2、Al2O3、SiN。
例如，图1(b)所示例中，操作基板1的接合面1a介由接合层4与施主基板5接合，由此得到复合基板6。此外，图1(c)所示例中，操作基板1的接合面1a上直接接合施主基板5，由此得到复合基板6A。
【实施例】
调制以下成分混合而成的浆料。
将该浆料在室温下注入铝合金制的模具后，室温下放置1小时。接着40℃下放置30分钟，固化后脱模。再于室温、接着于90℃下分别放置2小时，得到板状的粉末成形体。
将得到的粉末成形体在大气中以1100℃煅烧(预烧结)后，如图4所示，将预烧体置于钼制承烧板12上，在上侧空出0.1～0.5mm的缝隙22，在此状态下盖上盖子14，在氢3：氮1的气氛中以1700～1800℃进行烧成，得到烧结体。然后，如图5所示，在烧结体的除外周边缘部以外的中央部以及中间部上，放置钼制的板17，再于其上也放置钼制的重物18，在氢3：氮1的气氛中以1700～1800℃实施退火处理。
对制作的半成品基板实施高精度研磨加工。首先通过绿碳化硅进行双面研磨加工调整出形状后，通过金刚石研磨浆实施双面研磨加工。金刚石的粒径为3μm。最后通过SiO2磨粒和金刚石磨粒进行CMP加工，实施洗净。另外，洗净采用的是一般的半导体洗净工序中所使用的RCA洗净(具体的，将基板分别交互浸渍在过氧化氨水(双氧水和氨水的混合溶液)、过氧盐酸(双氧水和盐酸的混合溶液)、硫酸、氢氟酸、王水和纯水中洗净)。通过AFM测定接合面的表面粗糙度的测定结果是，Ra值为1.0nm(70μm×70μm视野)。
调查这些基板的各部位的粒径、蚀刻过程中的剥离、有无发生开裂，得到表1、表2的结果。其中，中央部和外周边缘部的各粒径通过改变烧成时的温度、基板上侧的缝隙大小、以及烧成后的退火处理时基板上放置的覆盖物的大小(覆盖基板的范围)而进行调节。此外，中间部的粒径在所有的例子中都与中央部的粒径相同。
本发明实施例中，剥离发生率均较低，同时开裂发生率也较低，较之于比较例，具有显著效果。

Claims (3)

1.一种操作基板，是半导体用复合基板的操作基板，其特征在于，
所述操作基板由多晶氧化铝形成，所述操作基板的外周边缘部的晶粒的平均粒径为20～55μm，所述操作基板的中央部的晶粒的平均粒径为10～50μm，所述操作基板的外周边缘部的晶粒的平均粒径为所述中央部的晶粒的平均粒径的1.1倍以上、3.0倍以下，所述外周边缘部是从所述操作基板的边缘起、向着中心的宽5mm的环状部分。
2.一种半导体用复合基板，具有权利要求1所述的操作基板、以及接合在所述操作基板的接合面上的施主基板。
3.根据权利要求2所述的复合基板，其中，所述施主基板由单晶硅构成。
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