CN105186283A - Cos semiconductor laser array - Google Patents
Cos semiconductor laser array Download PDFInfo
- Publication number
- CN105186283A CN105186283A CN201510631374.8A CN201510631374A CN105186283A CN 105186283 A CN105186283 A CN 105186283A CN 201510631374 A CN201510631374 A CN 201510631374A CN 105186283 A CN105186283 A CN 105186283A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- substrate
- laser array
- cos
- turn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000003287 optical effect Effects 0.000 claims abstract description 27
- 238000007493 shaping process Methods 0.000 claims abstract description 23
- 241000218202 Coptis Species 0.000 claims description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 239000011806 microball Substances 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 239000006185 dispersion Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to a laser array, in particular to a COS semiconductor laser array. The COS semiconductor laser array comprises a substrate, wherein at least one semiconductor laser COS chip is arranged on the substrate; a steering optical component and a beam shaping lens are arranged on any semiconductor laser COS chip; the steering optical component is used for steering a laser beam emitted by the corresponding semiconductor laser COS chip in parallel to the substrate by 90 degrees to output; and the beam shaping lens is used for collimating the laser beam which is steered by the corresponding steering optical component. Therefore, the COS semiconductor laser array has relatively good heat-dissipation performance.
Description
Technical field
The present invention relates to a kind of laser array, be specifically related to a kind of COS semiconductor laser array.
Background technology
The visible light lasers light source that laser display and lighting field adopt mainly contains diode pumped solid state laser and semiconductor laser two kinds, along with the continuous lifting of semiconductor laser power, due to diode pumped solid state laser exist laser speckle high, can harsh, the high in cost of production shortcoming of operating environment requirements, increasing lasing light emitter selects semiconductor laser.Wherein, semiconductor laser array is integrated with dozens of luminescence chip in less volume, defines the Laser output of tens of watts.But, existing semiconductor laser array adopts semiconductor laser COS chip mostly, this chip is lateral emitting form, therefore need base has the ridge-roof type structure perpendicular to base plate could realize array light output when array package, because the contact area between this ridge-roof type structure and base is limited, along with the continuous lifting of laser chip power output, its heat dissipation problem highlights gradually.In addition, existing semiconductor laser array is comparatively intensive owing to arranging, and the shaping that it is carried out whole array output beam in later stage use procedure is comparatively difficult.
Summary of the invention
Content of the present invention is to provide a kind of COS semiconductor laser array, and it can overcome the problem of existing semiconductor laser array poor heat radiation preferably.
According to COS semiconductor laser array of the present invention, it comprises substrate, and substrate is gone into battle and shown at least one semiconductor laser COS chip, and arbitrary semiconductor laser COS chip place is equipped with one and turns to optical module and a beam shaping lens; Turn to optical module to turn to 90 ° of output for the laser beam corresponding semiconductor laser COS chip being parallel to substrate and launching, beam shaping lens is for collimating the laser beam after correspondence turns to optical module to turn to.
In the present invention, the electrical connection bottom surface of multiple semiconductor laser COS chip can all weld together with substrate, compared to existing set-up mode, it preferably can increase the contact area between semiconductor laser COS chip and substrate, thus can bring preferably heat dispersion.In addition, the light-emitting area place of arbitrary semiconductor laser COS chip of the present invention can arrange one all just over the ground and turn to optical module, thus preferably the laser beam of semiconductor laser COS chip emission can be turned to 90 ° of outputs, and the light beam after turning to can also carry out shaping through beam shaping lens, thus nearly collimated light beam can be obtained, thus shaping difficulty when effectively can reduce subsequent applications, obtain the output beam of better quality.
As preferably, optical module is turned to adopt polarization splitting prism or 45 ° of dielectric mirrors.
In the present invention, turn to optical module preferably to adopt polarization splitting prism or 45 ° of dielectric mirrors, thus can the laser beam of preferably noise spectra of semiconductor lasers COS chip emission turn to.
As preferably, beam shaping lens adopts micro ball lens or GRIN Lens.
In the present invention, beam shaping lens preferably adopts micro ball lens or GRIN Lens, thus preferably can carry out shaping to the laser beam after turning to optical module to turn to, to obtain nearly directional light.
As preferably, semiconductor laser COS chip adopts the mode of eutectic welding to be connected with substrate.
In the present invention, the mode that semiconductor laser COS chip can adopt eutectic to weld is connected with substrate, thus also can bring preferably heat dispersion while guarantee weld strength.
As preferably, substrate laid inside has connecting circuit, and semiconductor laser COS chip is connected with connecting circuit gold thread.
In the present invention, semiconductor laser COS chip can be connected with connecting circuit gold thread, thus preferably can reduce electric energy loss in the line, also preferably can reduce the heat that circuit produces at work while energy savings.
As preferably, substrate place is provided with temperature sensor, and temperature sensor is for gathering the working temperature of semiconductor laser COS chip and correspondingly producing temperature signal.
In the present invention, at substrate place set temperature transducer, thus preferably can detect the working temperature of semiconductor laser COS chip in real time, thus can the be real-time operating state of laser array be adjusted, ensure that its job stability preferably.
As preferably, substrate is located on a base, and base position is provided with electric interfaces, and electric interfaces comprises for by the power supply interface of connecting circuit to semiconductor laser COS chip power supply, and for reading the data-interface of temperature signal.
In the present invention, power supply interface can have multiple, and multiple semiconductor laser COS chip the quantity of corresponding power supply interface can be divided into many groups, wherein semiconductor laser chip of each group all can connected in series or in parallelly connect from different power supply interfaces afterwards, thus make it possible to by powering to different power supply interfaces, and make laser array of the present invention can carry out work with different states, and then can apply in actual production more neatly.
In the present invention, multiple semiconductor laser COS chip can also carry out array in centrosymmetric mode, thus makes the output beam of laser array can preferably present round symmetry characteristic, and then greatly can reduce the difficulty of follow-up shaping.
In the present invention, multiple semiconductor laser COS chip can comprise multiple red, green, blue three look semiconductor laser COS chip, thus make a semiconductor laser array can simultaneously or timesharing export RGB laser, preferably can obtain the white light source being applicable to show or throw light on through simple even photosystem, avoid complicated combined optical system.
As preferably, optical module and beam shaping lens is turned to all to adopt glue to be bonded in corresponding position.
As preferably, the junction of optical module and substrate is turned to be configured with layer of metal layer to be welded on substrate corresponding position.
In the present invention, turn to optical module and beam shaping lens can carry out surface metalation and be weldingly fixed on corresponding position, thus can comparatively firmly be connected with substrate.
Accompanying drawing explanation
Fig. 1 is the connection diagram of multiple semiconductor laser COS chip and substrate in embodiment 1;
Fig. 2 is the connection diagram of single semiconductor laser COS chip and substrate in embodiment 1.
Embodiment
For understanding content of the present invention further, the present invention is described in detail in conjunction with the accompanying drawings and embodiments.Should be understood that, embodiment is only to make an explanation to the present invention and and non-limiting.
Embodiment 1
As shown in Figure 1 and Figure 2, a kind of COS semiconductor laser array is provided in the present embodiment.It comprises the substrate 110 be located in base (not shown), substrate 110 is gone into battle and is shown multiple semiconductor laser COS chip 120, and arbitrary semiconductor laser COS chip 120 place is equipped with one and turns to optical module 130 and a beam shaping lens 140.Wherein, turn to optical module 130 to turn to 90 ° of outputs for the laser beam corresponding semiconductor laser COS chip 120 being parallel to substrate 110 and launching, beam shaping lens 140 collimates for the laser beam after turn to optical module 130 to turn to correspondence.In addition, substrate 110 laid inside has connecting circuit (not shown), and semiconductor laser COS chip 120 is connected with connecting circuit gold thread; Substrate 110 place is provided with temperature sensor, and temperature sensor is for gathering the working temperature also corresponding generation temperature signal of semiconductor laser COS chip 120; Base position is also provided with electric interfaces (not shown), and electric interfaces comprises the power supply interface for being powered to semiconductor laser COS chip 120 by connecting circuit, and for reading the data-interface of temperature signal.
In the present embodiment, the mode that semiconductor laser COS chip 120 adopts eutectic to weld is connected with substrate 110, and turn to optical module 130 to adopt polarization splitting prism, beam shaping lens 140 adopts micro ball lens.Optical module 130 and beam shaping lens 140 is turned to all to adopt glue to be bonded in the corresponding installed position of substrate 110.
In the present embodiment, multiple semiconductor laser COS chip 120 is same color chip and with rectangular mode array.
In addition, the spacing between arbitrary neighborhood semiconductor laser COS chip 120 can be arbitrary numerical value in 2 ~ 5mm, be 2.5mm in the present embodiment, thus preferably heat dispersion can be obtained and while can take into account the volume of laser array.
Embodiment 2
The present embodiment also provides a kind of laser array, and the difference of itself and embodiment 1 is: turn to optical module 130 to adopt 45 ° of dielectric mirrors, beam shaping lens 140 adopts GRIN Lens; Optical module 130 is turned to be configured with layer of metal layer to be welded on substrate 110 corresponding position with the junction of substrate 110.
Embodiment 3
The present embodiment also provides a kind of laser array, and the difference of itself and embodiment 1 is: multiple semiconductor laser COS chip 120 comprises red, green, blue three color chip, and carries out array in the mode that circle is symmetrical; Wherein, the chip of different colours is all independently-powered.
In addition, in the present embodiment, the power ratio of three color chips is 1:0.86:0.52, thus can obtain the white laser bundle compared with Jia Sewen when working at the same time.
Below be schematically described the present invention and execution mode thereof, this description does not have restricted, and shown in accompanying drawing is also one of embodiments of the present invention, and actual structure is not limited thereto.So, if those of ordinary skill in the art enlightens by it, when not departing from the invention aim, without creatively designing the frame mode similar to this technical scheme and embodiment, all should protection scope of the present invention be belonged to.
Claims (9)
1.COS semiconductor laser array, it is characterized in that: comprise substrate (110), substrate (110) is gone into battle and is shown at least one semiconductor laser COS chip (120), and arbitrary semiconductor laser COS chip (120) place is equipped with one and turns to optical module (130) and a beam shaping lens (140); Turn to optical module (130) to turn to 90 ° of outputs for the laser beam corresponding semiconductor laser COS chip (120) being parallel to substrate (110) and launching, beam shaping lens (140) collimates for the laser beam after turn to optical module (130) to turn to correspondence.
2. laser array according to claim 1, is characterized in that: turn to optical module (130) to adopt polarization splitting prism or 45 ° of dielectric mirrors.
3. laser array according to claim 1, is characterized in that: beam shaping lens (140) adopts micro ball lens or GRIN Lens.
4. laser array according to claim 1, is characterized in that: semiconductor laser COS chip (120) adopts the mode of eutectic welding to be connected with substrate (110).
5. laser array according to claim 4, is characterized in that: substrate (110) laid inside has connecting circuit, and semiconductor laser COS chip (120) is connected with connecting circuit gold thread.
6. laser array according to claim 5, it is characterized in that: substrate (110) place is provided with temperature sensor, temperature sensor is for gathering the working temperature also corresponding generation temperature signal of semiconductor laser COS chip (120).
7. laser array according to claim 6, it is characterized in that: substrate (110) is located on a base, base position is provided with electric interfaces, electric interfaces comprises the power supply interface for being powered to semiconductor laser COS chip (120) by connecting circuit, and for reading the data-interface of temperature signal.
8., according to described laser array arbitrary in claim 1 ~ 7, it is characterized in that: turn to optical module (130) and beam shaping lens (140) all to adopt glue to be bonded in corresponding position.
9. laser array according to claim 8, is characterized in that: turn to optical module (130) to be configured with layer of metal layer to be welded on substrate (110) corresponding position with the junction of substrate (110).
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510631374.8A CN105186283A (en) | 2015-09-29 | 2015-09-29 | Cos semiconductor laser array |
| CN201610455137.5A CN106558832A (en) | 2015-09-29 | 2016-06-21 | COS semiconductor laser arrays |
| CN201620619635.4U CN205724367U (en) | 2015-09-29 | 2016-06-21 | Cos semiconductor laser array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510631374.8A CN105186283A (en) | 2015-09-29 | 2015-09-29 | Cos semiconductor laser array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105186283A true CN105186283A (en) | 2015-12-23 |
Family
ID=54908217
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510631374.8A Withdrawn CN105186283A (en) | 2015-09-29 | 2015-09-29 | Cos semiconductor laser array |
| CN201610455137.5A Pending CN106558832A (en) | 2015-09-29 | 2016-06-21 | COS semiconductor laser arrays |
| CN201620619635.4U Expired - Fee Related CN205724367U (en) | 2015-09-29 | 2016-06-21 | Cos semiconductor laser array |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610455137.5A Pending CN106558832A (en) | 2015-09-29 | 2016-06-21 | COS semiconductor laser arrays |
| CN201620619635.4U Expired - Fee Related CN205724367U (en) | 2015-09-29 | 2016-06-21 | Cos semiconductor laser array |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN105186283A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146690A (en) * | 2020-01-06 | 2020-05-12 | 常州纵慧芯光半导体科技有限公司 | A kind of laser module and preparation method thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186283A (en) * | 2015-09-29 | 2015-12-23 | 北京为世联合科技有限公司 | Cos semiconductor laser array |
| WO2019062055A1 (en) | 2017-09-26 | 2019-04-04 | 青岛海信激光显示股份有限公司 | Laser array, laser light source, and laser projector |
| CN109560452A (en) * | 2017-09-26 | 2019-04-02 | 青岛海信激光显示股份有限公司 | A kind of laser array and laser light source |
| CN109560455A (en) * | 2017-09-26 | 2019-04-02 | 青岛海信激光显示股份有限公司 | A kind of laser array |
| CN114256732A (en) * | 2020-09-22 | 2022-03-29 | 青岛海信激光显示股份有限公司 | Laser device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7733932B2 (en) * | 2008-03-28 | 2010-06-08 | Victor Faybishenko | Laser diode assemblies |
| US8432945B2 (en) * | 2010-09-30 | 2013-04-30 | Victor Faybishenko | Laser diode combiner modules |
| CN103368066B (en) * | 2013-07-29 | 2015-11-18 | 武汉锐科光纤激光技术股份有限公司 | A kind of ramp type multitube semiconductor laser coupling device and method |
| CN104007558B (en) * | 2014-05-07 | 2016-11-09 | 武汉锐科光纤激光器技术有限责任公司 | A kind of polarization of semiconductor laser beam merging apparatus and coupling process |
| CN105186283A (en) * | 2015-09-29 | 2015-12-23 | 北京为世联合科技有限公司 | Cos semiconductor laser array |
-
2015
- 2015-09-29 CN CN201510631374.8A patent/CN105186283A/en not_active Withdrawn
-
2016
- 2016-06-21 CN CN201610455137.5A patent/CN106558832A/en active Pending
- 2016-06-21 CN CN201620619635.4U patent/CN205724367U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146690A (en) * | 2020-01-06 | 2020-05-12 | 常州纵慧芯光半导体科技有限公司 | A kind of laser module and preparation method thereof |
| CN111146690B (en) * | 2020-01-06 | 2021-09-07 | 常州纵慧芯光半导体科技有限公司 | Laser module and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106558832A (en) | 2017-04-05 |
| CN205724367U (en) | 2016-11-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C04 | Withdrawal of patent application after publication (patent law 2001) | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20151223 |