CN105185703A - Wafer edge leveling method - Google Patents
Wafer edge leveling method Download PDFInfo
- Publication number
- CN105185703A CN105185703A CN201410273168.XA CN201410273168A CN105185703A CN 105185703 A CN105185703 A CN 105185703A CN 201410273168 A CN201410273168 A CN 201410273168A CN 105185703 A CN105185703 A CN 105185703A
- Authority
- CN
- China
- Prior art keywords
- exposing unit
- incomplete
- exposure
- scanned
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims description 23
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Provided is a wafer edge leveling method. A plurality of exposure units are formed on a wafer. Non-complete exposure units which can carry out horizontal correction automatically in a subsequent exposure process are determined through a system in advance, then the non-complete exposure units above the central line of the wafer are scanned from bottom to top, and the non-complete exposure units behind the central line of the wafer are scanned from top to bottom; finally, an ideal leveling way for problematic exposure units is obtained. Through the method, wafer edge non-complete exposure unit defocus risks can be reduced furthest. The product yield is raised.
Description
Technical field
The present invention relates to microelectronic, particularly relate to a kind of method that crystal round fringes is levelling.
Background technology
Wafer levelling (leveling) operation principle is illustrated in fig. 2 shown below (mainly to refer to step-by-step scanning photo-etching device scanner) in current semiconductor lithography exposure technology, while X-direction stepping, Y-direction scans, and the direction that the T1-T32 of simple following Fig. 3 is followed in scanning replaces way, the scanning direction of namely adjacent exposing unit is contrary and replaces down, this way is absolutely in most cases no problem, but to exposing unit (shot) size of specific products, tool parameters sets, board performance, and during the combination of product substrate thickness changing condition etc., can levelling problem be there is at the incomplete shot that partly itself automatically can do level correction and out of focus occur, and then affect product yield.
Chinese patent (CN101482705) describes a kind of mask aligner scan exposure system, the cylindrical mirror, varifocal mirror group, homogenizer, coupling light group, mask plate, object lens, the work stage that comprise light source and be arranged in order along the light path that light source outgoing beam is formed, between described varifocal mirror group and homogenizer, be provided with Beam rotation mirror group, described Beam rotation mirror group is made up of some groups of optical elements.During scan exposure, first to after the exposure of exposure field sector scanning, described Beam rotation mirror group is moved in described light path, again exposure field sector scanning is exposed, remove described Beam rotation mirror group after completing scan exposure, improve the dose uniformity of exposure field Y-direction, the dose uniformity of X-direction can be improved again, thus change the systematic function of exposure dose, improve the uniformity of lithographic line width.
Chinese patent (CN101750901A) describes a kind of scanning exposure method, comprise: by a mask and a substrate toward a direction relative movement, wherein this mask and this substrate are in the moving process of single fraction irradiation, there is relative velocities such as grade different at least two, with the irradiation area making this substrate one times expose, there is a desired size.
Above-mentioned two patents all do not record the technical characteristic about exposure scanning direction changes.
Summary of the invention
In view of the above problems, the invention provides a kind of levelling method of crystal round fringes.
The technical scheme that technical solution problem of the present invention adopts is:
The method that crystal round fringes is levelling, wherein, forms some complete exposing units and incomplete exposing unit on wafer, first prejudges out and self automatically can do the incomplete exposing unit of level correction in post-exposure process;
Then the above incomplete exposing unit of crystal circle center's line is scanned from bottom to top, crystal circle center's incomplete exposing unit of line the following stated is scanned from the top down;
Finally obtain the optimal levelling mode of problematic exposing unit.
Above-mentioned method, wherein, by the system made by exposure file, and in conjunction with the setting parameter of exposure bench, the layout of photoetching level figure of specific product and the size of described exposing unit, prejudge out and self automatically can do the incomplete exposing unit of level correction in post-exposure process.
Above-mentioned method, wherein, the setting parameter of described exposure bench comprises exposure bench and can not do defining of level correction scope to crystal round fringes.
Above-mentioned method, wherein, the planar graph of described complete exposing unit is rectangle.
Above-mentioned method, wherein, is scanned described incomplete exposing unit by step photo-etching machine.
Technique scheme tool has the following advantages or beneficial effect:
By said method, reduce the out of focus risk of the incomplete exposing unit of crystal round fringes to greatest extent, improve the yield of product.
Accompanying drawing explanation
With reference to appended accompanying drawing, to describe embodiments of the invention more fully.But, appended accompanying drawing only for illustration of and elaboration, do not form limitation of the scope of the invention.
Fig. 1 is the schematic diagram of crystal round fringes incomplete exposing unit exposure scanning direction;
Fig. 2 is the levelling schematic diagram of step-by-step scanning photo-etching device scanner wafer;
Fig. 3 is the schematic diagram of step-by-step scanning photo-etching device scanner exposure scanning direction.
Embodiment
The invention provides a kind of method that crystal round fringes is levelling, can be applicable to semiconductor lithography process field, preferably can be applicable to be more than or equal to 130nm, 90nm, 65/55nm, 45/40nm, 32/28nm and be less than or equal in the technique of the technology nodes such as 22nm, and apply in the technology module of the technology platforms such as Logic and Litho, when after use the method, reduce the risk of the incomplete exposing unit out of focus of crystal round fringes to greatest extent, improve product yield.
Core concept of the present invention is first prejudged by the incomplete exposing unit of prior art means to crystal round fringes, obtain some and self automatically can do the incomplete exposing unit of level correction in post-exposure process, then the incomplete exposing unit of more than crystal circle center's line this part is scanned from the bottom up, crystal circle center's line this part incomplete exposing unit is once scanned from top to bottom.
As shown in Figure 1, the method that a kind of crystal round fringes of the present invention is levelling, in the system that existing exposure file is made, some complete exposing units and incomplete exposing unit is formed on wafer, the planar graph of complete exposing unit is that rectangle is (as exposing unit 55, 56 etc.), by simple software function optimization, make it in conjunction with the setting of exposure bench parameter, size of specific product photoetching level pattern layout and exposing unit size etc., carry out automatic decision in advance to go out itself automatically can do the incomplete exposing unit of level correction in post-exposure process, automatic decision in advance can come for existing exposure system, also can have been come by artificial subjective judgement, wherein exposure bench parameter mainly board can not do defining of level correction scope to crystal round fringes.
The incomplete exposing unit of level correction itself automatically can be done for these, by exposing the optimization of scanning direction, reach improvement levelling, improve the target of product yield: obtain those scanning directions automatically doing the incomplete exposing unit of level correction from the larger-size scanning direction less to size of efficient frontier by by judgement, namely from the interior boundary scan of wafer, the out-of-flatness of crystal round fringes is reduced on the levelling impact of the incomplete exposing unit of correspondence or erroneous judgement.Wherein, shown in Fig. 1, ("+" expression scans from the top down, "-" represents scanning from bottom to top), wafer is formed a center line, incomplete exposing unit on crystal circle center's line is scanned from bottom to top, incomplete exposing unit below center line is scanned from the top down, ensures that the exposing unit of potential problems can obtain optimal levelling mode, to reduce out of focus risk to greatest extent like this.
Such as exposing unit 77 and 87,22 and 14, as according to former scan mode, be then single scanning from top to bottom, then exposing unit 77 and 87 just can not better be levelling, as single scanning from the bottom up, then exposing unit 22 and 14 just can not better be levelling, so in order to improve product yield, reducing crystal round fringes incomplete exposing unit out of focus risk to greatest extent, improving the exposure directions of wafer.
By illustrating and accompanying drawing, giving the exemplary embodiments of the ad hoc structure of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention proposes existing preferred embodiment, but these contents are not as limitation.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.
Claims (5)
1. the method that crystal round fringes is levelling, is characterized in that: on wafer, form some complete exposing units and incomplete exposing unit, first prejudges out and self automatically can do the incomplete exposing unit of level correction in post-exposure process;
Then the above incomplete exposing unit of crystal circle center's line is scanned from bottom to top, crystal circle center's incomplete exposing unit of line the following stated is scanned from the top down;
Finally obtain the optimal levelling mode of problematic exposing unit.
2. method according to claim 1, it is characterized in that: by the system made by exposure file, and in conjunction with the setting parameter of exposure bench, the layout of photoetching level figure of specific product and the size of described exposing unit, prejudge out and self automatically can do the incomplete exposing unit of level correction in post-exposure process.
3. method according to claim 2, is characterized in that: the setting parameter of described exposure bench comprises exposure bench and can not do defining of level correction scope to crystal round fringes.
4. method according to claim 1, is characterized in that: the planar graph of described complete exposing unit is rectangle.
5. method according to claim 1, is characterized in that: scanned described incomplete exposing unit by step photo-etching machine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410273168.XA CN105185703B (en) | 2014-06-18 | 2014-06-18 | A kind of method that crystal round fringes are levelling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410273168.XA CN105185703B (en) | 2014-06-18 | 2014-06-18 | A kind of method that crystal round fringes are levelling |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105185703A true CN105185703A (en) | 2015-12-23 |
| CN105185703B CN105185703B (en) | 2019-09-17 |
Family
ID=54907702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410273168.XA Active CN105185703B (en) | 2014-06-18 | 2014-06-18 | A kind of method that crystal round fringes are levelling |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105185703B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109782545A (en) * | 2017-11-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | Exposure method and exposure device |
| CN110634729A (en) * | 2019-09-12 | 2019-12-31 | 上海华力集成电路制造有限公司 | Method for preventing surface film of incomplete exposure unit on edge of wafer from being stripped |
| CN110631518A (en) * | 2019-09-25 | 2019-12-31 | 上海华力集成电路制造有限公司 | Wafer surface flatness detection and incomplete exposure unit flatness detection compensation method |
| CN111103768A (en) * | 2019-12-26 | 2020-05-05 | 华虹半导体(无锡)有限公司 | Method for reducing poor focusing of wafer edge |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270317A (en) * | 1997-03-25 | 1998-10-09 | Nikon Corp | Method of scanning exposure |
| CN1416019A (en) * | 2001-11-02 | 2003-05-07 | 株式会社东芝 | Exposure method and exposure device |
| KR100678469B1 (en) * | 2005-01-17 | 2007-02-02 | 삼성전자주식회사 | Exposure Stage Wafer Stage and Wafer Parallelism Control Method Using the Same |
| KR100776496B1 (en) * | 2006-12-04 | 2007-11-16 | 동부일렉트로닉스 주식회사 | Wafer Leveling Method |
| CN101276151A (en) * | 2008-05-14 | 2008-10-01 | 上海微电子装备有限公司 | Method and device for measuring flatness of wafer surface |
| CN101482705A (en) * | 2009-02-23 | 2009-07-15 | 上海微电子装备有限公司 | Scanning exposure system and method of photo-etching machine |
| CN102625924A (en) * | 2009-08-25 | 2012-08-01 | 株式会社尼康 | Exposure method, exposure apparatus, and device manufacturing method |
| KR20120108615A (en) * | 2011-03-25 | 2012-10-05 | 삼성전자주식회사 | Method of measure an expose energy in photolithography system |
| CN103782238A (en) * | 2011-08-31 | 2014-05-07 | Asml荷兰有限公司 | A method of determining focus corrections, lithographic processing cell and device manufacturing method |
-
2014
- 2014-06-18 CN CN201410273168.XA patent/CN105185703B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270317A (en) * | 1997-03-25 | 1998-10-09 | Nikon Corp | Method of scanning exposure |
| CN1416019A (en) * | 2001-11-02 | 2003-05-07 | 株式会社东芝 | Exposure method and exposure device |
| KR100678469B1 (en) * | 2005-01-17 | 2007-02-02 | 삼성전자주식회사 | Exposure Stage Wafer Stage and Wafer Parallelism Control Method Using the Same |
| KR100776496B1 (en) * | 2006-12-04 | 2007-11-16 | 동부일렉트로닉스 주식회사 | Wafer Leveling Method |
| CN101276151A (en) * | 2008-05-14 | 2008-10-01 | 上海微电子装备有限公司 | Method and device for measuring flatness of wafer surface |
| CN101482705A (en) * | 2009-02-23 | 2009-07-15 | 上海微电子装备有限公司 | Scanning exposure system and method of photo-etching machine |
| CN102625924A (en) * | 2009-08-25 | 2012-08-01 | 株式会社尼康 | Exposure method, exposure apparatus, and device manufacturing method |
| KR20120108615A (en) * | 2011-03-25 | 2012-10-05 | 삼성전자주식회사 | Method of measure an expose energy in photolithography system |
| CN103782238A (en) * | 2011-08-31 | 2014-05-07 | Asml荷兰有限公司 | A method of determining focus corrections, lithographic processing cell and device manufacturing method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109782545A (en) * | 2017-11-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | Exposure method and exposure device |
| CN109782545B (en) * | 2017-11-15 | 2021-06-08 | 台湾积体电路制造股份有限公司 | Exposure method and exposure apparatus |
| CN110634729A (en) * | 2019-09-12 | 2019-12-31 | 上海华力集成电路制造有限公司 | Method for preventing surface film of incomplete exposure unit on edge of wafer from being stripped |
| CN110634729B (en) * | 2019-09-12 | 2021-08-10 | 上海华力集成电路制造有限公司 | Method for preventing surface film of incomplete exposure unit on edge of wafer from being stripped |
| CN110631518A (en) * | 2019-09-25 | 2019-12-31 | 上海华力集成电路制造有限公司 | Wafer surface flatness detection and incomplete exposure unit flatness detection compensation method |
| CN110631518B (en) * | 2019-09-25 | 2021-06-15 | 上海华力集成电路制造有限公司 | Wafer surface flatness detection and incomplete exposure unit flatness detection compensation method |
| CN111103768A (en) * | 2019-12-26 | 2020-05-05 | 华虹半导体(无锡)有限公司 | Method for reducing poor focusing of wafer edge |
| CN111103768B (en) * | 2019-12-26 | 2022-06-07 | 华虹半导体(无锡)有限公司 | Method for reducing poor focusing of wafer edge |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105185703B (en) | 2019-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8609305B2 (en) | Methods of forming a photolithography reticle | |
| JP5133841B2 (en) | Slice image generation method and modeling apparatus | |
| US20030046654A1 (en) | Method for optimizing and method for producing a layout for a mask, preferably for use in semiconductor production, and computer program therefor | |
| CN103076722B (en) | A kind ofly expose for reducing wafer edge region the exposure method and photoetching process that defocus | |
| JP2006272916A (en) | Stereolithography method | |
| CN1550906A (en) | Method for producing variable-pitch nested lines or contact holes for direct-write lithography | |
| CN105185703A (en) | Wafer edge leveling method | |
| KR102478399B1 (en) | Exposure apparatus, exposure method, and article manufacturing method | |
| US7083405B2 (en) | Photo-fabrication apparatus | |
| CN111430261B (en) | Method and device for detecting process stability of photoetching machine | |
| CN103149792A (en) | Optical proximity correction method | |
| CN109782545A (en) | Exposure method and exposure device | |
| KR101977801B1 (en) | Exposure system for forming a reticle and method for manufacturing the reticle | |
| Chien et al. | Maskless lithography based on oblique scanning of point array with digital distortion correction | |
| US20230367230A1 (en) | Exposure apparatus | |
| CN103631084A (en) | Optical proximity correction method | |
| CN1690862A (en) | Method of generating writing pattern, method of forming resist pattern, method of controlling exposure tool | |
| CN113093476A (en) | Optimization method of photoetching process and photoetching method | |
| CN106033172B (en) | Method for optical proximity correction repair | |
| Miau et al. | Optimization of pattern quality in DMD scanning maskless lithography: A parametric study of the OS3L exposure algorithm | |
| JPH11202470A (en) | Proximity effect correction method for mask manufacturing | |
| US20140154629A1 (en) | Lithography apparatus and method of manufacturing article | |
| CN102707576A (en) | Work structure for providing scanning path of immersion photoetching machine | |
| US10955746B2 (en) | Lithography method with reduced impacts of mask defects | |
| US8048592B2 (en) | Photomask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |