CN105161635A - QLED device with self-assembly electron transmission layer, and preparation method for QLED device - Google Patents
QLED device with self-assembly electron transmission layer, and preparation method for QLED device Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 39
- 238000001338 self-assembly Methods 0.000 title claims abstract description 39
- 230000005540 biological transmission Effects 0.000 title claims abstract description 29
- 238000004528 spin coating Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 22
- 239000007924 injection Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011737 fluorine Substances 0.000 claims abstract description 19
- 239000002096 quantum dot Substances 0.000 claims abstract description 11
- 238000001704 evaporation Methods 0.000 claims abstract description 8
- 230000008020 evaporation Effects 0.000 claims abstract description 8
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 15
- 239000000243 solution Substances 0.000 claims description 9
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002105 nanoparticle Substances 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 150000003384 small molecules Chemical class 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 109
- 239000000463 material Substances 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000002904 solvent Substances 0.000 description 7
- 239000002346 layers by function Substances 0.000 description 5
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 2
- 229910000071 diazene Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
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- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
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- 230000008901 benefit Effects 0.000 description 1
- GNHQSAUHXKRQMC-UHFFFAOYSA-N benzene;chlorine Chemical compound [Cl].C1=CC=CC=C1 GNHQSAUHXKRQMC-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
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- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
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- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 125000005817 fluorobutyl group Chemical group [H]C([H])(F)C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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Abstract
The invention discloses a preparation method for a QLED device with a self-assembly electron transmission layer, and the method comprises the steps: carrying out the spin coating of a hole injection layer on an ITO substrate through a spin coater; carrying out the spin coating of a hole transmission layer on the hole injection layer; carrying out the spin coating of a light-emitting layer and an electron transmission layer on the hole transmission layer, wherein the light-emitting layer and the electron transmission layer are formed through the self-assembly of mixed solution containing fluorine-containing small molecules and quantum dots, and the electron transmission layer is located on the light-emitting layer; finally carrying out the spin coating of an electron injection layer on the electron transmission layer, carrying out the evaporation of an cathode on the electron injection layer, and preparing the QLED device. Through employing the surface energy difference between the light-emitting layer QDs of a quantum dot light-emitting diode and the fluorine-containing small molecules, the method can obtain the light-emitting layer and the electron transmission layer at the same time through one-time film formation, thereby simplifying the preparation flow of a device and saving the production cost.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of QLED device with self assembly electron transfer layer and preparation method thereof.
Background technology
Light emitting diode with quantum dots (QLED), as a kind of emerging high-performance Display Technique, receives the extensive concern of academia and industrial circle in recent years.And have similar device architecture organic/polymer LED (OLED/PLED) compared with, QLED has the advantage of many uniquenesses.First, the emitting layer material of OLED/PLED is mainly based on organic/polymeric material, and these materials along with the irreversible change of the passing recurring structure of service time, can affect the stability of device; Secondly, be subject to the restriction of materials chemistry structure, the emission peak of OLED/PLED is usually wider, is unfavorable for realizing highly purified luminescent spectrum, thus limits its application in high-performance display; Again, because the quanta point material that QLED adopts has very little size (< 10nm), its photoelectric property carries out designing and regulating and controlling easily via quantum size effect.
Similar with OLED/PLED, excellent electroluminescence is realized if want in QLED, except luminescent layer quantum dot 4(QDs) except, also need to add various functional layer between two electrodes (Ag electrode 1 and ITO electrode 7) and QDs4, these functional layers mainly comprise electron injecting layer 2(EIL), electron transfer layer 3(ETL), hole transmission layer 5(HTL) and hole injection layer 6(HIL) etc.Their effect mainly helps charge carrier (electronics and hole) can enter luminescent layer smoothly efficiently then by the mode recombination luminescence of radiation transistion.The device architecture schematic diagram of QLED refers to Fig. 1.
Consider from Financial cost aspect, solution processing method is the inevitable direction of QLED development.In general, in order to prepare a complete QLED device, each functional layer and luminescent layer need successively to deposit by specific order.But in process prepared by solwution method, while deposited overlayers material, must ensure that the film that lower floor has deposited is not fallen by the solvent clean of upper layer of material.This just proposes strict requirement to the solvent of adjacent layer material, and the solvent that namely adjacent layer material uses must possess orthogonality.But the material taking into account specific light Electricity Functional and solvent orthogonality is little simultaneously.On the other hand, in QLED device, the performance of device can be made to get a promotion to a certain extent although increase a kind of functional layer, fussy degree and preparation cost prepared by device can be increased, be unfavorable for the extensive industrialized development of QLED.
Therefore, prior art has yet to be improved and developed.
Summary of the invention
In view of above-mentioned the deficiencies in the prior art, the object of the present invention is to provide a kind of QLED device with self assembly electron transfer layer and preparation method thereof, be intended to solve existing preparation method's solvent and need possess orthogonality, prepare loaded down with trivial details and that preparation cost is high problem.
Technical scheme of the present invention is as follows:
There is a preparation method for the QLED device of self assembly electron transfer layer, wherein, comprise step:
A, by sol evenning machine spin coating one hole injection layer on ito substrate;
B, then spin coating one hole transmission layer are on hole injection layer;
C, then spin coating one luminescent layer and electron transfer layer are on hole transmission layer, and wherein, described luminescent layer and electron transfer layer are formed by the mixed solution self assembly of fluorine-containing Small molecular and quantum dot, and electron transfer layer is positioned on luminescent layer;
D, last spin coating one electron injecting layer are on electron transfer layer, and evaporation one negative electrode is on electron injecting layer, obtained QLED device.
The described preparation method with the QLED device of self assembly electron transfer layer, wherein, comprises before described steps A: carry out preliminary treatment to ito substrate.
The described preparation method with the QLED device of self assembly electron transfer layer, wherein, described ito substrate preliminary treatment refers to and adopts oxygen gas plasma process or UV-ozone process ITO surface.
The described preparation method with the QLED device of self assembly electron transfer layer, wherein, described hole injection layer is formed by PEDOT:PSS.
The described preparation method with the QLED device of self assembly electron transfer layer, wherein, described hole transmission layer is formed by Poly-TPD and PVK solution.
The described preparation method with the QLED device of self assembly electron transfer layer, wherein, described fluorine-containing Small molecular is NDI.
The described preparation method with the QLED device of self assembly electron transfer layer, wherein, described electron injecting layer is formed by the ZnO nano particle be dispersed in ethanolic solution.
The described preparation method with the QLED device of self assembly electron transfer layer, wherein, described negative electrode is metal A g.
The described preparation method with the QLED device of self assembly electron transfer layer, wherein, the thickness of described luminescent layer is 35 ~ 45nm, and the thickness of described electron transfer layer is 3 ~ 5nm.
A kind of QLED device, wherein, quotes as above arbitrary described preparation method with the QLED device of self assembly electron transfer layer and is prepared from.
Beneficial effect: the present invention forms mixed solution by being infiltrated in quantum dot solution by the fluorine-containing Small molecular with self assembly characteristic, the fluorine-containing Small molecular of low-surface-energy is enriched to the surface of QDs layer, form a very thin Small molecular layer with electric transmission layer function, realize one-pass film-forming and just can form the double-layer films with luminous and electric transmission layer function, thus enormously simplify the preparation flow of device, reduce production cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of QLED device.
Fig. 2 is a kind of flow chart with preparation method's preferred embodiment of the QLED device of self assembly electron transfer layer of the present invention.
Fig. 3 is the structural formula of NDI.
Fig. 4 is the process schematic that NDI molecule fluorine-containing in dry run spontaneously can move to hybrid films surface.
Fig. 5 is the energy diagram of QLED device.
Fig. 6 is the structural formula of PDI.
Embodiment
The invention provides a kind of QLED device with self assembly electron transfer layer and preparation method thereof, for making object of the present invention, technical scheme and effect clearly, clearly, the present invention is described in more detail below.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Refer to Fig. 2, Fig. 2 is a kind of flow chart with preparation method's preferred embodiment of the QLED device of self assembly electron transfer layer of the present invention, and as shown in the figure, it comprises step:
S100, by sol evenning machine spin coating one hole injection layer on ito substrate;
S200, then spin coating one hole transmission layer are on hole injection layer;
S300, then spin coating one luminescent layer and electron transfer layer are on hole transmission layer, and wherein, described luminescent layer and electron transfer layer are formed by the mixed solution self assembly of fluorine-containing Small molecular and quantum dot, and electron transfer layer is positioned on luminescent layer;
S400, a spin coating subsequently electron injecting layer are on electron transfer layer, and last evaporation one negative electrode, on electron injecting layer, obtains QLED device.
Core improvements of the present invention: the fluorine-containing Small molecular with self assembly characteristic is mixed in quantum dot solution and forms mixed solution and be self-assembled into luminescent layer and electron transfer layer.Because fluorine-containing Small molecular has very low surface energy, minimum in order to make the energy of whole system drop to, in the process of mixed solution film forming, the fluorine-containing Small molecular of low-surface-energy can be enriched to the surface of QDs layer, forms a very thin Small molecular layer with electric transmission function.Only need one-pass film-forming just can be formed by said method and there is double-layer films that is luminous and electric transmission function, thus simplify the preparation flow of device, reduce production cost.
Ito substrate of the present invention, for the preparation of before QLED device, cleans ito substrate.Concrete cleaning process comprises: ito substrate is placed in successively acetone, washing lotion, deionized water and isopropyl alcohol and carries out ultrasonic cleaning, ultrasonic all lasting about 15 minutes at every turn, after ultrasonic completing, ito substrate is positioned over dry for standby in cleaning oven.By above-mentioned ultrasonic cleaning process, the dust on ito substrate surface and chemical dirt effectively can be removed.
Comprise before described step S100: preliminary treatment is carried out to ito substrate.The present invention, on an ito substrate before each functional layer of spin coating, also carries out preliminary treatment to ito substrate.Preferably, described ito substrate preliminary treatment refers to and adopts oxygen gas plasma process or UV-ozone process ITO surface.Concrete pre-treatment step is: taken out by the ito substrate of drying, then oxygen gas plasma or UV-ozone process ito substrate surface 5 ~ 10min(is adopted such as, process ito substrate surface 5min), to remove the organic substance of ito substrate surface attachment further, thus improve the work function of ito substrate.
In described step S100, the ito substrate handled well is placed on sol evenning machine, by sol evenning machine spin coating one hole injection layer on ito substrate.Preferably, described hole injection layer is formed by PEDOT:PSS.Namely spin coating one PEDOT:PSS layer is as hole injection layer on ito substrate, then described PEDOT:PSS is placed on (such as, the temperature of heating station is 150 DEG C) heating 10 ~ 15min on the heating station of 150 ~ 180 DEG C, to remove moisture.This heating process completes in atmosphere.
In described step S200, after preparing hole injection layer, spin coating one hole transmission layer is on hole injection layer.Preferably, described hole transmission layer is formed by Poly-TPD and PVK solution.Concrete hole transmission layer preparation process comprises: the dried ito substrate scribbling hole injection layer is placed in nitrogen atmosphere, sol evenning machine with the speed of 2000 revolutions per seconds successively spin coating one deck Poly-TPD and one deck PVK on hole injection layer.Wherein, after the complete Poly-TPD of spin coating at 100 ~ 120 DEG C heat treatment 15 ~ 20min, after the complete PVK of spin coating at 150 ~ 180 DEG C heat treatment 25 ~ 35min.Preferably, after the complete Poly-TPD of spin coating at 110 DEG C heat treatment 20min, after the complete PVK of spin coating at 170 DEG C heat treatment 30min.In addition, described Poly-TPD and PVK is dissolved in chlorine Benzene and Toluene respectively, and both concentration is respectively 6 ~ 10mg/mL and 1.0 ~ 2.0mg/mL.Preferably, the concentration of Poly-TPD in chlorobenzene is 8mg/mL, the PVK concentration in toluene is 1.5mg/mL.Adopting Poly-TPD and PVK as the material of hole transmission layer, be because Poly-TPD has good film forming characteristics and hole transport performance, and Poly-TPD can improve the balance between electron hole, increases the recombination probability of hole and electronics.And PVK can effectively reduce from ito anode to luminescent layer and the hole injection barrier of electron transfer layer, thus improve the performance of QLED device.
In described step S300, after the good hole transmission layer of spin coating, and after ito substrate cooling, then spin coating one luminescent layer and electron transfer layer are on hole transmission layer, wherein, described luminescent layer and electron transfer layer are formed by the mixed solution self assembly of fluorine-containing Small molecular and quantum dot.Preferably, described fluorine-containing Small molecular is N, N-bis-(2,2,3,3,4,4,4-seven fluoro butyl)-Isosorbide-5-Nitrae: 5,8-naphthalene-tetracarboxylic acid diimide (be called for short NDI, structural formula is shown in Fig. 3).Such as, QDs and NDI will be mixed with to be spin-coated on hole transmission layer.Two ends due to NDI molecule are connected to more fluorine atom, the surface energy of NDI molecule is more much lower than the surface energy of quanta point material QDs, for making the energy of whole system reach minimum in the process of film drying, fluorine-containing NDI molecule spontaneously can move to the surface of hybrid films, finally make stable system, Fig. 4 is shown in by the schematic diagram of this process.
In the present invention, described NDI molecule belongs to N-shaped small molecule material, and because this molecule has molecular system pi-conjugated greatly, and planes of molecules is fine, and its electron mobility is very high, is 0.34cm
2v
-1s
-1.From energy level, its LUMO and HOMO energy level is respectively 3.72eV and 6.84eV, is applicable to very much doing electron transport layer materials, and the energy diagram of device asks for an interview Fig. 5.In step S300, QDs and NDI Monodispersed is in toluene, the concentration of QDs is 15mg/mL, dried QDs film preferably thickness is about 40nm, consider that NDI electron transfer layer only needs about 5nm just can play good effect, can estimate NDI concentration is in the solution that 1.875mg/mL is comparatively suitable.It should be noted that, fluorine-containing Small molecular described in the present invention is not limited to NDI as self assembly electron transfer layer, have with described NDI that the fluorine-containing Small molecular of similar structures is same can be used as self assembly electron transport layer materials, such as, N, N-bis-(2,2,3,3,4,4,4-seven fluoro butyl)-3,4:9,10-perylene-tetracarboxylic acid diimide (be called for short PDI, structural formula is shown in Fig. 6) has identical effect equally, and namely PDI also can disperse only just can obtain luminescent layer and electron transfer layer through a spin coating in a solvent together with QDs.Heating 10 minutes on the heating station after the spin coating of this step completes, device being placed on 80 DEG C, the solvent that removing is residual.Preferably, the thickness of described luminescent layer is 35 ~ 45nm, and the thickness of described electron transfer layer is 3 ~ 5nm.
In described step S400, a spin coating subsequently electron injecting layer is on electron transfer layer, and last evaporation one negative electrode, on electron injecting layer, obtains QLED device.Preferably, described electron injecting layer is formed by the ZnO nano particle be dispersed in ethanolic solution.By zinc oxide (ZnO) nanoparticulate dispersed in ethanol, the concentration of described ZnO nano particle is 50mg/mL in the present invention.Then by dispersion zinc oxide (ZnO) nano particle in ethanol with the speed spin coating of 2000 revs/min on the electron transport layer, form the ZnO electron injecting layer of one deck densification, then heat 10 minutes at 80 DEG C.Last evaporation one negative electrode, on electron injecting layer, obtains QLED device.Preferably, described negative electrode is metal A g.Namely the ito substrate of complete for spin coating each layer film is placed in the metal A g of evaporation storehouse by mask plate hot evaporation one deck 100nm as negative electrode by the present invention, thus prepared by QLED device.The low metal A g of work function is adopted to be beneficial to the injection of electronics as negative electrode.
The present invention also provides a kind of QLED device, and wherein, described QLED device is quoted as above arbitrary described preparation method with the QLED device of self assembly electron transfer layer and is prepared from.
In sum, a kind of QLED device with self assembly electron transfer layer provided by the invention and preparation method thereof, the present invention utilizes light emitting diode with quantum dots luminescent layer QDs and electron transfer layer containing the surface energy difference between fluorine molecule, achieve the beneficial effect only needing one-pass film-forming simultaneously can obtain luminescent layer and electron transfer layer, simplify the preparation flow of device, save production cost.
Should be understood that, application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can be improved according to the above description or convert, and all these improve and convert the protection range that all should belong to claims of the present invention.
Claims (10)
1. there is a preparation method for the QLED device of self assembly electron transfer layer, it is characterized in that, comprise step:
A, by sol evenning machine spin coating one hole injection layer on ito substrate;
B, then spin coating one hole transmission layer are on hole injection layer;
C, then spin coating one luminescent layer and electron transfer layer are on hole transmission layer, and wherein, described luminescent layer and electron transfer layer are formed by the mixed solution self assembly of fluorine-containing Small molecular and quantum dot, and electron transfer layer is positioned on luminescent layer;
D, a spin coating subsequently electron injecting layer are on electron transfer layer, and last evaporation one negative electrode, on electron injecting layer, obtains QLED device.
2. the preparation method with the QLED device of self assembly electron transfer layer according to claim 1, is characterized in that, comprise before described steps A: carry out preliminary treatment to ito substrate.
3. the preparation method with the QLED device of self assembly electron transfer layer according to claim 2, is characterized in that, described ito substrate preliminary treatment refers to and adopts oxygen gas plasma process or UV-ozone process ITO surface.
4. the preparation method with the QLED device of self assembly electron transfer layer according to claim 1, it is characterized in that, described hole injection layer is formed by PEDOT:PSS.
5. the preparation method with the QLED device of self assembly electron transfer layer according to claim 1, it is characterized in that, described hole transmission layer is formed by Poly-TPD and PVK solution.
6. the preparation method with the QLED device of self assembly electron transfer layer according to claim 1, is characterized in that, described fluorine-containing Small molecular is NDI.
7. the preparation method with the QLED device of self assembly electron transfer layer according to claim 1, is characterized in that, described electron injecting layer is formed by the ZnO nano particle be dispersed in ethanolic solution.
8. the preparation method with the QLED device of self assembly electron transfer layer according to claim 1, is characterized in that, described negative electrode is metal A g.
9. the preparation method with the QLED device of self assembly electron transfer layer according to claim 6, is characterized in that, the thickness of described luminescent layer is 35 ~ 45nm, and the thickness of described electron transfer layer is 3 ~ 5nm.
10. a QLED device, is characterized in that, quote as arbitrary in claim 1-9 as described in the preparation method with the QLED device of self assembly electron transfer layer be prepared from.
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| CN105826484A (en) * | 2016-05-18 | 2016-08-03 | Tcl集团股份有限公司 | OLED and preparation method thereof |
| CN106098884A (en) * | 2016-07-08 | 2016-11-09 | 东华大学 | A kind of light emitting diode with quantum dots and preparation method thereof |
| CN106206973A (en) * | 2016-09-05 | 2016-12-07 | Tcl集团股份有限公司 | Four-footed quantum dot, light emitting diode based on four-footed quantum dot and preparation method thereof |
| WO2017012275A1 (en) * | 2015-07-21 | 2017-01-26 | 京东方科技集团股份有限公司 | Quantum-dot ink |
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| CN110797475A (en) * | 2018-08-01 | 2020-02-14 | 华中科技大学 | Method for preparing double-layer thin film and quantum dot light-emitting diode and preparation method thereof |
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| CN112802984A (en) * | 2020-12-30 | 2021-05-14 | 广东聚华印刷显示技术有限公司 | Preparation method of electronic device and display device |
| CN113517417A (en) * | 2021-04-23 | 2021-10-19 | 光华临港工程应用技术研发(上海)有限公司 | Method for manufacturing organic light emitting display device and organic light emitting display device |
| WO2022062718A1 (en) * | 2020-09-28 | 2022-03-31 | 京东方科技集团股份有限公司 | Quantum dot light emitting device and manufacturing method therefor, and display device |
| US11616208B2 (en) | 2019-08-26 | 2023-03-28 | Samsung Display Co., Ltd. | Quantum dot composition, light-emitting device and method of manufacturing light-emitting device |
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