CN105161608A - LED lamp filament illuminating strip and preparation method therefor - Google Patents
LED lamp filament illuminating strip and preparation method therefor Download PDFInfo
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- CN105161608A CN105161608A CN201510383172.6A CN201510383172A CN105161608A CN 105161608 A CN105161608 A CN 105161608A CN 201510383172 A CN201510383172 A CN 201510383172A CN 105161608 A CN105161608 A CN 105161608A
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- led
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000003292 glue Substances 0.000 claims abstract description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 239000006071 cream Substances 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 abstract 2
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Abstract
一种LED灯丝发光条及其制备方法，该LED灯丝发光条包括上下两排LED芯片，下排中的各个LED芯片间隔排布，上排中的各个LED芯片分别搭接在下排中两个相邻LED芯片之间，下排LED芯片与上排LED芯片的发光面相对，上排中的各LED芯片的正电极和负电极分别与其搭接的下排中相邻两个LED芯片的负电极和正电极焊接在一起。其制备方法是在下排各个LED芯片的正电极和负电极上刷涂锡膏；加热使锡膏熔融，将对应的电极焊接，在串接芯片条的正反面包覆荧光胶并固化。本发明采用互不重叠的芯片发光面之间面面对应排布，提高了出光的均匀性，利于散热；芯片之间避免了打线串接，降低了封装成本，提高了成品的良率。
An LED filament light-emitting strip and a preparation method thereof. The LED filament light-emitting strip comprises two rows of LED chips, the LED chips in the lower row are arranged at intervals, and the LED chips in the upper row are respectively overlapped with two phases in the lower row. Between adjacent LED chips, the lower row of LED chips is opposite to the light-emitting surface of the upper row of LED chips, and the positive electrode and negative electrode of each LED chip in the upper row are respectively overlapped with the negative electrodes of the two adjacent LED chips in the lower row. welded to the positive electrode. The preparation method is to brush the solder paste on the positive electrode and the negative electrode of each LED chip in the lower row; heat to melt the solder paste, weld the corresponding electrodes, and coat the front and back of the serially connected chip strips with fluorescent glue and solidify. The invention adopts the corresponding arrangement of non-overlapping chip light-emitting surfaces, which improves the uniformity of light output and facilitates heat dissipation; avoids wire bonding and serial connection between chips, reduces packaging costs, and improves the yield of finished products .
Description
Technical field
The present invention relates to a kind of LED silk light-emitting section and preparation method thereof, belong to light emitting semiconductor device manufacturing technology field.
Background technology
Light-emitting diode (LED) adopts constant current to drive with it, have that energy-conserving and environment-protective, volume are little, low-power consumption, long service life and obtain development greatly.Compared to conventional incandescent, the luminous feature due to its point-source of light and directivity of LED, make the very difficult use directly substituting conventional incandescent, so LED chip is made filament bar by encapsulation procedure by LED by people now, just can full angle luminescence as tungsten lamp after access current and power supply.LED wherein in LED silk lamp is usually with serial or parallel connection, or go here and there and combine and mode be fixed together, connected by line, then the part such as driving power, lamp holder of fit on necessity forms complete LED bulb, this has not only possessed the energy-conserving and environment-protective of conventional LED, the advantage of life-span length, also achieve the characteristic of conventional incandescent full angle luminescence, deeply welcome by illumination market.
Although LED silk lamp has possessed the characteristic of conventional incandescent full angle luminescence, but still there is unstable product quality in the filament lamp bar used at present, the shortcoming of consistency difference, as being connected by routing between LED chip with chip, usually easily occur that rosin joint causes loose contact, gold goal is partially welded the dead lamp that causes leaking electricity, the complicated cost of encapsulation step remains high, and the situation such as finished product yield is low.In addition, existing LED silk chip depends on substrate, and unidirectional continuous distribution, in substrate both sides, both have impact on the transmission of some light, hinders shedding of heat again.
Chinese patent literature CN103560194A disclosed " a kind of manufacture method of LED silk chip strip and LED silk ", by dividing rectangular chip region on substrate so that form the LED silk chip strip of strip, because the LED silk chip of LED silk chip strip inside connects, follow-up be made into LED silk time without the need to carrying out repeatedly die bond routing technique, thus Simplified flowsheet, reduce production cost.Although described filament chip strip eliminates die bond routing technique, exist in chipset, reluctant problem of dispelling the heat simultaneously.
Chinese patent literature CN104505453A disclosed " a kind of without bonding wire LED silk ", filament substrate is provided with circuit, LED chip is connected on circuit, circuit is made up of some connecting circuits, connecting circuit comprises two conductive silver layers, and be connected by conducting wire between two conductive silver layers, LED chip is flip-chip, LED chip is arranged between two adjacent connecting circuits, is connected by connecting circuit.Advantage of the present invention adopts without bonding wire structure, and cost saving turn reduces wire bonding process to LED reliability and the impact of producing yield.But filament arranges in advance on circuit and connecting circuit and lays conductive silver layer on substrate, increase the reduction that preparation process affects cost.
Chinese patent literature CN204289439U disclosed " a kind of LED silk of all-round luminescence ", comprises the substrate being mixed with fluorescent material, substrate is provided with electrode, at least one LED chip, and cover the packaging plastic on LED chip.By the substrate that the silicones containing fluorescent material is formed, eliminate glass or the sapphire cost as substrate, and avoid glass or sapphire to the impact of chip light-emitting.Although this filament realizes 360 degree of bright dippings, but must particular requirement be met between the substrate formed containing the silicones of fluorescent material and the luminous orientation of chip, otherwise finally may occur mixed light non-uniform phenomenon.
Compare existing LED silk chip and depend on substrate, unidirectional continuous distribution is in substrate both sides, and substrate not only have impact on the transmission of light, increase cost, hinder shedding of heat again, and the distribution mode of chip affects the uniformity of light, the routing of chip connects the reliability reducing encapsulation yield simultaneously.
Summary of the invention
For the deficiency that existing LED silk technology exists, the invention provides the LED silk light-emitting section that a kind of light-emitting uniformity is good, be beneficial to heat radiation, a kind of preparation method of this LED silk light-emitting section is provided simultaneously.
LED silk light-emitting section of the present invention, by the following technical solutions:
This LED silk light-emitting section, comprise two rows LED chip, each LED chip in lower row is intervally arranged, each LED chip in upper row to be overlapped in lower row between two adjacent LED chips respectively, lower row's LED chip is relative with the light-emitting area of upper row's LED chip, the positive electrode of each LED chip in upper row and negative electrode weld together with the negative electrode of two adjacent LEDs chip in the lower row of its overlap joint and positive electrode respectively, and all LED chips are concatenated into chip strip, and chip strip is coated with fluorescent adhesive layer.
The positive electrode of described LED chip and negative electrode are symmetrically distributed in two ends, chip light emitting face.
Have a LED chip at least in described upper row's LED chip, in lower row's LED chip, have two LED chips at least.
The preparation method of above-mentioned LED silk light-emitting section, comprises step as follows:
(1) arrange LED chip under arrangement, each LED chip in lower row is intervally arranged, and the spacing of adjacent LED chip is identical and be less than the length of single led chip;
(2) on the positive electrode and negative electrode of lower each LED chip of row, tin cream is brushed;
(3) arrange on lower row's LED chip and arrange LED chip, in upper row, the light-emitting area of each LED chip down, and be placed on
In lower row adjacent LED chip interval above; In upper row, negative electrode and the positive electrode of each LED chip are corresponding with the positive electrode of two adjacent LEDs chip in lower row and negative electrode respectively; Heat all LED chips, make tin cream melting, by the electrode welding of correspondence, make to arrange up and down formation electrically serial connection between each chip, form serial connection chip strip;
(4) the coated fluorescent glue of positive and negative of the serial connection chip strip made in step (3), through overcuring, obtained LED silk is sent out
Striation.
In described step (3), the temperature of all LED chips of heating is 220 DEG C-300 DEG C.
In described step (4), the temperature of solidification is 135 DEG C-150 DEG C.
The present invention adopts face, face correspondence between the chip light emitting face of non-overlapping copies to arrange, and passes through tin cream melting welding by between chip and chip, obtains LED silk light-emitting section after coated fluorescent glue; Compare conventional LED silk luminous bar structure, chip subtend distributes, and improves the uniformity of bright dipping, is beneficial to heat radiation; Avoid routing serial connection between chip, do not re-use die bond substrate, not only reach the object reducing packaging cost, and improve the yield of finished product.
Accompanying drawing explanation
Fig. 1 is the arrangement schematic diagram of lower row's LED chip in the present invention.
Fig. 2 is the schematic diagram arranging LED chip arrangement on carrying out on lower row's LED chip.
The structural representation of LED silk light-emitting section prepared by Fig. 3 the present invention.
In figure, 1, LED chip; 2, P electrode; 3, N electrode; 4, tin cream; 5 fluorescent glues.
Embodiment
LED silk light-emitting section of the present invention as shown in Figure 3, comprises two rows LED chip, and lower row's LED chip is arranged on row's LED chip.Be intervally arranged between each LED chip 1 in lower row, each LED chip in upper row to be overlapped in lower row between two adjacent LEDs chip 1 respectively, lower row's LED chip is relative with the light-emitting area of upper row's LED chip, the positive electrode of the LED chip in upper row and negative electrode weld together with the negative electrode of two adjacent LEDs chip 1 in lower row and positive electrode respectively, form chip strip, coated fluorescent glue 5 in chip strip.
The preparation process of above-mentioned LED silk light-emitting section is as follows:
(1) as shown in Figure 1, arrange LED chip under arrangement, each LED chip in lower row is intervally arranged, and the spacing of adjacent LED chip is identical and be less than the length of single led chip.Two LED chips are had at least in lower row's LED chip.
The P electrode 2(positive electrode of single led chip) and N electrode 3(negative electrode) be symmetrically distributed in two ends, chip light emitting face.
(2) in the P electrode 2 and N electrode 3 of lower each LED chip of row, tin cream 4 is brushed.
(3) as shown in Figure 2, lower row's LED chip is arranged and arranges LED chip, in upper row, the light-emitting area of each LED chip is down, and above the interval being placed on adjacent LED chip in lower row; The N electrode 3(negative electrode of each LED chip in upper row) and P electrode 2(positive electrode) respectively with corresponding under arrange in the P electrode 2(positive electrode of two adjacent LEDs chip) and N electrode 3(negative electrode).At 220 DEG C-300 DEG C all LED chips of heating, make tin cream melting, by the LED chip electrode welding of upper row and lower row, make to arrange up and down between each chip and form electrically serial connection, form serial connection chip strip.
(4) as shown in Figure 3, in the coated fluorescent glue 5 of positive and negative of the serial connection chip strip that step (3) is made, and through 135 DEG C of-150 DEG C of hot settings, obtained LED silk light-emitting section.
Claims (6)
1. a LED silk light-emitting section, comprise two rows LED chip, it is characterized in that, each LED chip in lower row is intervally arranged, each LED chip in upper row to be overlapped in lower row between two adjacent LED chips respectively, lower row's LED chip is relative with the light-emitting area of upper row's LED chip, the positive electrode of each LED chip in upper row and negative electrode weld together with the negative electrode of two adjacent LEDs chip in the lower row of its overlap joint and positive electrode respectively, all LED chips are concatenated into chip strip, and chip strip is coated with fluorescent adhesive layer.
2. LED silk light-emitting section according to claim 1, is characterized in that, the positive electrode of described LED chip and negative electrode are symmetrically distributed in two ends, chip light emitting face.
3. LED silk light-emitting section according to claim 1, is characterized in that, has a LED chip at least, have two LED chips in lower row's LED chip at least in described upper row's LED chip.
4. a preparation method for LED silk light-emitting section described in claim 1, is characterized in that, comprise step as follows:
(1) arrange LED chip under arrangement, each LED chip in lower row is intervally arranged, and the spacing of adjacent LED chip is identical and be less than the length of single led chip;
(2) on the positive electrode and negative electrode of lower each LED chip of row, tin cream is brushed;
(3) arrange on lower row's LED chip and arrange LED chip, in upper row, the light-emitting area of each LED chip down, and be placed on
In lower row adjacent LED chip interval above; In upper row, negative electrode and the positive electrode of each LED chip are corresponding with the positive electrode of two adjacent LEDs chip in lower row and negative electrode respectively; Heat all LED chips, make tin cream melting, by the electrode welding of correspondence, make to arrange up and down formation electrically serial connection between each chip, form serial connection chip strip;
(4) the coated fluorescent glue of positive and negative of the serial connection chip strip made in step (3), through overcuring, obtained LED silk light-emitting section.
5. the preparation method of LED silk light-emitting section according to claim 4, is characterized in that, in described step (3), the temperature of all LED chips of heating is 220 DEG C-300 DEG C.
6. the preparation method of LED silk light-emitting section according to claim 4, is characterized in that, in described step (4), the temperature of solidification is 135 DEG C-150 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510383172.6A CN105161608B (en) | 2015-07-03 | 2015-07-03 | A kind of LED filament light-emitting section and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510383172.6A CN105161608B (en) | 2015-07-03 | 2015-07-03 | A kind of LED filament light-emitting section and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105161608A true CN105161608A (en) | 2015-12-16 |
| CN105161608B CN105161608B (en) | 2017-12-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510383172.6A Active CN105161608B (en) | 2015-07-03 | 2015-07-03 | A kind of LED filament light-emitting section and preparation method thereof |
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Cited By (36)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106531731A (en) * | 2016-12-07 | 2017-03-22 | 鸿利智汇集团股份有限公司 | Stentless LED packaging structure and manufacturing method thereof |
| GB2543139A (en) * | 2015-08-17 | 2017-04-12 | Jiaxing Super Lighting Electric Appliance Co Ltd | LED light bulb and LED filament thereof |
| GB2547085A (en) * | 2015-12-19 | 2017-08-09 | Jiaxing Super Lighting Electric Appliance Co Ltd | LED filament |
| DE102016109665A1 (en) * | 2016-05-25 | 2017-11-30 | Osram Opto Semiconductors Gmbh | FILAMENT AND LIGHTING DEVICE |
| US9995474B2 (en) | 2015-06-10 | 2018-06-12 | Jiaxing Super Lighting Electric Appliance Co., Ltd. | LED filament, LED filament assembly and LED bulb |
| CN108417568A (en) * | 2018-03-05 | 2018-08-17 | 孙爱芬 | Surface light source for LED lighting |
| JP2018174126A (en) * | 2017-03-31 | 2018-11-08 | 液光固態照明股▲ふん▼有限公司 | LED lamp |
| CN109461724A (en) * | 2018-11-14 | 2019-03-12 | 佛山市国星半导体技术有限公司 | A kind of polycrystal string high voltage LED chip |
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| US11168843B2 (en) | 2014-09-28 | 2021-11-09 | Zhejiang Super Lighting Electric Appliance Co., Ltd. | LED bulb lamp |
| US11187384B2 (en) | 2014-09-28 | 2021-11-30 | Zhejiang Super Lighting Electric Appliance Co., Ltd. | LED bulb lamp |
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