CN105157854A - Terahertz micro bolometer and manufacture method thereof - Google Patents
Terahertz micro bolometer and manufacture method thereof Download PDFInfo
- Publication number
- CN105157854A CN105157854A CN201510503644.7A CN201510503644A CN105157854A CN 105157854 A CN105157854 A CN 105157854A CN 201510503644 A CN201510503644 A CN 201510503644A CN 105157854 A CN105157854 A CN 105157854A
- Authority
- CN
- China
- Prior art keywords
- layer
- micro
- terahertz
- polyimide layer
- sensitive polyimide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229920001721 polyimide Polymers 0.000 claims abstract description 86
- 229910052751 metal Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 82
- 239000004642 Polyimide Substances 0.000 claims abstract description 80
- 238000010521 absorption reaction Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000002093 peripheral effect Effects 0.000 claims description 14
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims 12
- 230000008878 coupling Effects 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 230000005855 radiation Effects 0.000 abstract description 37
- 230000003287 optical effect Effects 0.000 abstract description 10
- 230000002708 enhancing effect Effects 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000925 Cd alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- 239000011111 cardboard Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
本发明实施例公开了一种制造太赫兹微测辐射热计的方法，包括：制备衬底并形成金属反射层；在金属反射层上形成光敏聚酰亚胺层；在光敏聚酰亚胺层上形成介质覆盖层；在介质覆盖层上形成悬空的微桥结构；在微桥结构上形成太赫兹辐射吸收层；其中从光敏聚酰亚胺层与金属反射层接触的位置到微桥结构的中心部分的距离为太赫兹辐射的波长的四分之一。本发明的实施例中的太赫兹微测辐射热计通过调整光敏聚酰亚胺层厚度，可以使微桥结构获得满足“1/4波长”的有效光学谐振器高度，从而增强太赫兹辐射吸收层的吸收效率。
The embodiment of the invention discloses a method for manufacturing a terahertz microbolometer, comprising: preparing a substrate and forming a metal reflective layer; forming a photosensitive polyimide layer on the metal reflective layer; forming a photosensitive polyimide layer on the photosensitive polyimide layer A dielectric covering layer is formed on the dielectric covering layer; a suspended micro-bridge structure is formed on the dielectric covering layer; a terahertz radiation absorbing layer is formed on the micro-bridge structure; where the photosensitive polyimide layer is in contact with the metal reflective layer to the micro-bridge structure The distance of the central part is a quarter of the wavelength of the terahertz radiation. In the terahertz microbolometer in the embodiment of the present invention, by adjusting the thickness of the photosensitive polyimide layer, the microbridge structure can obtain an effective optical resonator height satisfying "1/4 wavelength", thereby enhancing the terahertz radiation absorption Layer absorption efficiency.
Description
技术领域 technical field
本发明涉及太赫兹探测技术领域，尤其是涉及一种太赫兹微测辐射热计及其制造方法。 The invention relates to the technical field of terahertz detection, in particular to a terahertz microbolometer and a manufacturing method thereof.
背景技术 Background technique
太赫兹是指频率为0.1-10THz（1THz=1012Hz）范围的电磁波，对应波长范围为3mm-30μm，位于毫米波与红外波之间，与其它波段的电磁辐射相比有其独特的性质：①瞬态性：太赫兹脉冲的典型脉宽在皮秒量级；②宽带性：太赫兹脉冲源通常只包含若干个周期的电磁振荡，单个脉冲的频带可以覆盖GHz至几十THz的范围；③相干性：太赫兹时域光谱技术的相干测量技术能够直接测量太赫兹电场的振幅和相位，可以方便地提取样品的折射率、吸收系数；④低能性：太赫兹光子的能量只有毫电子伏特，不会因为电离而破坏位比被检测物质，从而可以安全地进行生物医学方面的检测和诊断；⑤穿透性：太赫兹辐射对于很多非极性绝缘物质，例如硬纸板、塑料、纺织物等包装材料都有很高的穿透特性，对藏匿物体进行探测；⑥惧水性：大多数极性分子如水分子、氨分子等对太赫兹辐射有强烈的吸收，可以通过分析它们的特征谱研究物质含水量或者进行产品质量控制；⑦光谱的特征吸收：由于许多极性大分子的振动和转动能级正好处于太赫兹频带范围，使太赫兹光谱技术在分析和研究大分子方面有广阔的应用前景。 Terahertz refers to electromagnetic waves with a frequency in the range of 0.1-10THz (1THz=10 12 Hz), corresponding to a wavelength range of 3mm-30μm, located between millimeter waves and infrared waves, and has unique properties compared with electromagnetic radiation in other bands : ①Transient: The typical pulse width of a terahertz pulse is on the order of picoseconds; ②Broadband: The terahertz pulse source usually only contains a few cycles of electromagnetic oscillation, and the frequency band of a single pulse can cover the range from GHz to tens of THz ; ③ Coherence: The coherent measurement technology of terahertz time-domain spectroscopy can directly measure the amplitude and phase of the terahertz electric field, and can easily extract the refractive index and absorption coefficient of the sample; ④ Low energy: the energy of terahertz photons is only millielectron Volts, will not destroy the potential ratio of the detected substance due to ionization, so that biomedical detection and diagnosis can be safely performed; ⑤ Penetration: Terahertz radiation is effective for many non-polar insulating substances, such as cardboard, plastics, textiles, etc. Packaging materials such as objects have high penetration characteristics, and can detect hidden objects; ⑥ water fear: most polar molecules such as water molecules and ammonia molecules have a strong absorption of terahertz radiation, which can be analyzed by analyzing their characteristic spectrum Research on the water content of substances or product quality control; ⑦Spectral characteristic absorption: Since the vibration and rotational energy levels of many polar macromolecules are just in the terahertz frequency range, terahertz spectroscopy technology has broad applications in the analysis and research of macromolecules Application prospect.
太赫兹室温探测器是一个新发展的研究方向，具有室温工作、体积小、响应快、可成面阵图像、应用范围广等特点。目前，实现小型化太赫兹波能量探测的技术包括热释电太赫兹探测器和高莱探测器（GolayCell）两种。 Terahertz room temperature detector is a newly developed research direction, which has the characteristics of working at room temperature, small size, fast response, capable of forming area array images, and wide application range. At present, the technologies for miniaturized terahertz wave energy detection include pyroelectric terahertz detectors and GolayCell detectors.
太赫兹探测器探测单元中的热敏感薄膜对太赫兹波吸收很弱，使得太赫兹辐射信号检测的难度较大。传统的红外探测器，如微测辐射热计，对太赫兹的吸收仅为红外吸收的2~5%左右，甚至比器件材料的不均匀度还要低，故极难区分噪音与被检信号。因此，需要优化太赫兹探测器以增强吸收性能。 The thermally sensitive film in the detection unit of the terahertz detector has weak absorption of terahertz waves, which makes it difficult to detect terahertz radiation signals. Traditional infrared detectors, such as microbolometers, absorb only about 2-5% of infrared absorption for terahertz, even lower than the unevenness of device materials, so it is extremely difficult to distinguish noise from detected signals . Therefore, there is a need to optimize terahertz detectors to enhance the absorption performance.
传统的红外微测辐射热计优化项目，有三种种不同的优化方法。其一是改变吸收层材料，增强吸收层的吸收率；其二是使用天线耦合法，利用电磁波理论增强太赫兹波吸收，其三是优化谐振腔，增强太赫兹波辐射吸收。其中，由于太赫兹波长较长，对于提高谐振腔高度，使之满足“1/4波长”的有效光学谐振器高度，难度较大。 For traditional infrared microbolometer optimization projects, there are three different optimization methods. One is to change the material of the absorbing layer to enhance the absorption rate of the absorbing layer; the other is to use the antenna coupling method to enhance the absorption of terahertz waves by using electromagnetic wave theory; the third is to optimize the resonant cavity to enhance the absorption of terahertz wave radiation. Among them, due to the long terahertz wavelength, it is more difficult to increase the height of the resonator to meet the effective height of the "1/4 wavelength" optical resonator.
发明内容 Contents of the invention
本发明的目的之一是提供能够显著提高太赫兹辐射吸收率的太赫兹微测辐射热计及其制造方法。 One of the objectives of the present invention is to provide a terahertz microbolometer capable of significantly improving the absorptivity of terahertz radiation and a manufacturing method thereof.
本发明公开的技术方案包括： The technical solutions disclosed in the present invention include:
提供了一种制造太赫兹微测辐射热计的方法，其特征在于，包括：制备衬底；在所述衬底上形成金属反射层；在所述金属反射层上形成光敏聚酰亚胺层，并在所述光敏聚酰亚胺层中制备金属电极和金属引线；在所述光敏聚酰亚胺层上形成介质覆盖层，所述介质覆盖层覆盖所述光敏聚酰亚胺层；在所述介质覆盖层上形成悬空的微桥结构，所述微桥结构的周缘部分支撑在所述介质覆盖层上，所述微桥结构的中心部分远离所述介质覆盖层并通过连接部分与所述周缘部分连接；在所述中心部分上形成太赫兹辐射吸收层；其中从所述光敏聚酰亚胺层与所述金属反射层接触的位置到所述微桥结构的所述中心部分的距离为太赫兹辐射的波长的四分之一。 Provided is a method for manufacturing a terahertz microbolometer, characterized in that it includes: preparing a substrate; forming a metal reflective layer on the substrate; forming a photosensitive polyimide layer on the metal reflective layer , and prepare metal electrodes and metal leads in the photosensitive polyimide layer; form a dielectric covering layer on the photosensitive polyimide layer, and the dielectric covering layer covers the photosensitive polyimide layer; A suspended micro-bridge structure is formed on the dielectric covering layer, the peripheral part of the micro-bridge structure is supported on the dielectric covering layer, and the central part of the micro-bridge structure is away from the dielectric covering layer and is connected to the dielectric covering layer through a connecting part. The peripheral part is connected; a terahertz radiation absorbing layer is formed on the central part; wherein the distance from the position where the photosensitive polyimide layer is in contact with the metal reflective layer to the central part of the microbridge structure A quarter of the wavelength of terahertz radiation.
本发明的一个实施例中，在所述金属反射层上形成光敏聚酰亚胺层包括：在所述金属反射层上旋涂光敏聚酰亚胺溶液，然后对涂覆的光敏聚酰亚胺薄膜进行烘烤以去除涂覆的光敏聚酰亚胺薄膜中的溶剂。 In one embodiment of the present invention, forming a photosensitive polyimide layer on the metal reflective layer includes: spin-coating a photosensitive polyimide solution on the metal reflective layer, and then coating the coated photosensitive polyimide The film is baked to remove solvent from the coated photosensitive polyimide film.
本发明的一个实施例中，在所述光敏聚酰亚胺层中制备金属电极和金属引线包括：用光刻机对所述光敏聚酰亚胺层进行曝光，形成电极孔；用磁控溅射方法在所述光敏聚酰亚胺层中形成金属电极和金属引线。 In one embodiment of the present invention, preparing metal electrodes and metal leads in the photosensitive polyimide layer includes: using a photolithography machine to expose the photosensitive polyimide layer to form electrode holes; forming metal electrodes and metal leads in the photosensitive polyimide layer by a radiation method.
本发明的一个实施例中，所述介质覆盖层完全覆盖所述光敏聚酰亚胺层。 In one embodiment of the present invention, the dielectric covering layer completely covers the photosensitive polyimide layer.
本发明的一个实施例中，还包括：在所述微桥结构上形成金属电极层，所述金属电极层连接所述太赫兹辐射吸收层和所述光敏聚酰亚胺层中的金属电极和金属引线。 In one embodiment of the present invention, it also includes: forming a metal electrode layer on the micro-bridge structure, the metal electrode layer connecting the metal electrode in the terahertz radiation absorbing layer and the photosensitive polyimide layer and metal leads.
本发明的一个实施例中，还包括：在所述太赫兹辐射吸收层上形成介质层和金属吸收层。 In an embodiment of the present invention, it further includes: forming a dielectric layer and a metal absorption layer on the terahertz radiation absorption layer.
本发明的实施例中还提供了一种太赫兹微测辐射热计，其特征在于，包括：衬底；金属反射层，所述金属反射层形成在所述衬底上；光敏聚酰亚胺层，所述光敏聚酰亚胺层形成在所述金属反射层上，所述光敏聚酰亚胺层中形成有金属电极和金属引线；介质覆盖层，所述介质覆盖层形成在所述光敏聚酰亚胺层上并覆盖所述光敏聚酰亚胺层；微桥结构，所述微桥结构形成在所述介质覆盖层上，并且所述微桥结构的周缘部分支撑在所述介质覆盖层上，所述微桥结构的中心部分远离所述介质覆盖层并通过连接部分与所述周缘部分连接；太赫兹辐射吸收层，所述太赫兹辐射吸收层形成在所述中心部分上；其中从所述光敏聚酰亚胺层与所述金属反射层接触的位置到所述微桥结构的所述中心部分的距离为太赫兹辐射的波长的四分之一。 An embodiment of the present invention also provides a terahertz microbolometer, which is characterized in that it includes: a substrate; a metal reflective layer, the metal reflective layer is formed on the substrate; a photosensitive polyimide Layer, the photosensitive polyimide layer is formed on the metal reflective layer, metal electrodes and metal leads are formed in the photosensitive polyimide layer; a dielectric covering layer, the dielectric covering layer is formed on the photosensitive On the polyimide layer and covering the photosensitive polyimide layer; micro-bridge structure, the micro-bridge structure is formed on the medium cover layer, and the peripheral part of the micro-bridge structure is supported on the medium cover On the layer, the central part of the microbridge structure is away from the dielectric covering layer and connected to the peripheral part through the connecting part; the terahertz radiation absorbing layer, the terahertz radiation absorbing layer is formed on the central part; wherein The distance from the position where the photosensitive polyimide layer is in contact with the metal reflective layer to the central portion of the micro-bridge structure is a quarter of the wavelength of the terahertz radiation.
本发明的一个实施例中，所述介质覆盖层完全覆盖所述光敏聚酰亚胺层。 In one embodiment of the present invention, the dielectric covering layer completely covers the photosensitive polyimide layer.
本发明的一个实施例中，所述微桥结构上还形成有金属电极层，所述金属电极层连接所述太赫兹辐射吸收层和所述光敏聚酰亚胺层中的金属电极和金属引线。 In one embodiment of the present invention, a metal electrode layer is also formed on the microbridge structure, and the metal electrode layer connects the metal electrodes and metal leads in the terahertz radiation absorbing layer and the photosensitive polyimide layer .
本发明的一个实施例中，所述太赫兹辐射吸收层上还形成有介质层和金属吸收层。 In an embodiment of the present invention, a dielectric layer and a metal absorption layer are further formed on the terahertz radiation absorption layer.
本发明的实施例中的太赫兹微测辐射热计增加了光敏聚酰亚胺层和介质层，在介质层上形成悬空的微桥结构，微桥结构顶层制备有太赫兹辐射吸收层。通过调整光敏聚酰亚胺层厚度，可以使微桥结构获得满足“1/4波长”的有效光学谐振器高度，从而增强太赫兹辐射吸收层的吸收效率。介质层完整覆盖光敏聚酰亚胺层，保证其在上层微桥结构中牺牲层释放时不被去除，形成良好的力学支撑。该微桥结构有效解决较高的光学谐振腔与高落差下的稳定电学连通之间的矛盾，显著提高微桥结构的太赫兹辐射吸收率，工艺实现难度小。 In the terahertz microbolometer in the embodiment of the present invention, a photosensitive polyimide layer and a medium layer are added, and a suspended micro-bridge structure is formed on the medium layer, and a terahertz radiation absorption layer is prepared on the top layer of the micro-bridge structure. By adjusting the thickness of the photosensitive polyimide layer, the microbridge structure can obtain an effective optical resonator height satisfying "1/4 wavelength", thereby enhancing the absorption efficiency of the terahertz radiation absorbing layer. The dielectric layer completely covers the photosensitive polyimide layer to ensure that it will not be removed when the sacrificial layer is released in the upper microbridge structure, forming a good mechanical support. The microbridge structure effectively solves the contradiction between a higher optical resonant cavity and stable electrical connection under high drop, significantly improves the terahertz radiation absorption rate of the microbridge structure, and the process is less difficult to realize.
附图说明 Description of drawings
图1是本发明一个实施例的制造太赫兹微测辐射热计的方法的流程示意图。 Fig. 1 is a schematic flowchart of a method for manufacturing a terahertz microbolometer according to an embodiment of the present invention.
图2是本发明一个实施例的太赫兹微测辐射热计的结构示意图。 Fig. 2 is a schematic structural diagram of a terahertz microbolometer according to an embodiment of the present invention.
具体实施方式 Detailed ways
下面将结合附图详细说明本发明的实施例的太赫兹微测辐射热计的具体结构以及其制造方法的具体步骤。 The specific structure of the terahertz microbolometer according to the embodiment of the present invention and the specific steps of its manufacturing method will be described in detail below with reference to the accompanying drawings.
图1为本发明一个实施例的制造太赫兹微测辐射热计的方法的流程示意图。图2为根据本发明一个实施例制造的太赫兹微测辐射热计的结构示意图。 FIG. 1 is a schematic flowchart of a method for manufacturing a terahertz microbolometer according to an embodiment of the present invention. Fig. 2 is a schematic structural diagram of a terahertz microbolometer manufactured according to an embodiment of the present invention.
如图1所示，本发明的一些实施例中，在步骤10，可以制备衬底1，并且在衬底上形成金属反射层2。 As shown in FIG. 1 , in some embodiments of the present invention, in step 10 , a substrate 1 may be prepared, and a metal reflective layer 2 may be formed on the substrate.
本发明的一些实施例中，制备衬底1的方法以及在衬底上形成金属反射层2的方法可以是本领域常用的方法，在此不再详述。 In some embodiments of the present invention, the method for preparing the substrate 1 and the method for forming the metal reflective layer 2 on the substrate may be methods commonly used in the art, and will not be described in detail here.
在步骤20中，可以在金属反射层2上形成光敏聚酰亚胺层4，并在该光敏聚酰亚胺层中制备金属电极和金属引线3。 In step 20, a photosensitive polyimide layer 4 may be formed on the metal reflective layer 2, and metal electrodes and metal leads 3 are prepared in the photosensitive polyimide layer.
本发明的一些实施例中，可以使用旋涂的方法，在该金属反射层2上旋涂光敏聚酰亚胺溶液，从而在金属反射层上形成光敏聚酰亚胺薄膜，然后对涂覆的光敏聚酰亚胺薄膜进行烘烤（例如，在120℃以下的温度下）以去除涂覆的光敏聚酰亚胺薄膜中的溶剂。 In some embodiments of the present invention, the method of spin coating can be used to spin-coat the photosensitive polyimide solution on the metal reflective layer 2, so as to form a photosensitive polyimide film on the metal reflective layer, and then the coated The photosensitive polyimide film is baked (eg, at a temperature below 120° C.) to remove solvent from the coated photosensitive polyimide film.
在形成光敏聚酰亚胺层时，光敏聚酰亚胺层的厚度可以通过控制旋涂时旋涂机的转速和/或旋涂次数而进行调节。 When forming the photosensitive polyimide layer, the thickness of the photosensitive polyimide layer can be adjusted by controlling the rotational speed of the spin coater during spin coating and/or the number of times of spin coating.
本发明的一些实施例中，控制光敏聚酰亚胺层的厚度，可以使得该光敏聚酰亚胺层4增加微桥结构7（下文中详述）的光学谐振腔高度，使之满足波长的四分之一的最佳谐振高度。例如，一个实施例中，可以使从光敏聚酰亚胺层4与金属反射层2接触的位置到微桥结构7的中心部分72（下文中详述）的距离为太赫兹辐射的波长的四分之一。 In some embodiments of the present invention, controlling the thickness of the photosensitive polyimide layer can make the photosensitive polyimide layer 4 increase the height of the optical resonant cavity of the microbridge structure 7 (detailed below), so that it meets the requirements of the wavelength. One quarter of the optimum resonance height. For example, in one embodiment, the distance from the position where the photosensitive polyimide layer 4 is in contact with the metal reflective layer 2 to the central portion 72 of the microbridge structure 7 (detailed below) can be four times the wavelength of the terahertz radiation. one-third.
本发明的一些实施例中，在制备金属电极和金属引线3时，可以使用光刻机对光敏聚酰亚胺层进行曝光，形成电极孔，然后用磁控溅射的方法在光敏聚酰亚胺层中形成金属电极和金属引线3。金属电极和金属引线3的厚度可以在0.03至0.5微米的范围内。 In some embodiments of the present invention, when preparing metal electrodes and metal leads 3, a photolithography machine can be used to expose the photosensitive polyimide layer to form electrode holes, and then the photosensitive polyimide layer can be formed on the photosensitive polyimide layer by magnetron sputtering. Metal electrodes and metal leads 3 are formed in the amine layer. The thickness of the metal electrodes and metal leads 3 may be in the range of 0.03 to 0.5 microns.
在步骤30中，可以在光敏聚酰亚胺层4上形成介质覆盖层5。该介质覆盖层5可以为低应力介质层，可以由氮化硅或者氧化硅材料制成。 In step 30 , a dielectric covering layer 5 may be formed on the photosensitive polyimide layer 4 . The dielectric covering layer 5 can be a low-stress dielectric layer, and can be made of silicon nitride or silicon oxide.
例如，一个实施例中，介质覆盖层5可以为由PECVD设备制备的氮化硅或氧化硅薄膜，采用混频生长技术控制薄膜的应力。即采用两套频率不同的功率源交替工作，其中，高频源频率约几十MHz，低频源几百kHz。PECVD沉积温度为150~300℃，制备氮化硅介质覆盖层5时SiH4与NH3的流量比可以为10/170~40/140，制备氧化硅介质覆盖层5时SiH4与N2O的流量比可以为10/20~10/60。制备的介质覆盖层5厚度范围可以在50nm~2μm内。 For example, in one embodiment, the dielectric capping layer 5 can be a silicon nitride or silicon oxide film prepared by PECVD equipment, and the stress of the film is controlled by a mixed-frequency growth technique. That is, two sets of power sources with different frequencies are used to work alternately, among which, the frequency of the high-frequency source is about tens of MHz, and the frequency of the low-frequency source is hundreds of kHz. The PECVD deposition temperature is 150~300°C, the flow ratio of SiH 4 and NH 3 can be 10/170~40/140 when preparing the silicon nitride dielectric covering layer 5, and the SiH 4 and N 2 O The flow ratio can be 10/20~10/60. The prepared dielectric covering layer 5 may have a thickness ranging from 50 nm to 2 μm.
本发明的一些实施例中，介质覆盖层5可以完全覆盖光敏聚酰亚胺层4，使得在形成微桥结构7（下文中详述）时光敏聚酰亚胺层4不会被损伤或者去除。 In some embodiments of the present invention, the dielectric cover layer 5 can completely cover the photosensitive polyimide layer 4, so that the photosensitive polyimide layer 4 will not be damaged or removed when the microbridge structure 7 (detailed below) is formed .
在步骤40中，可以在介质覆盖层5上形成悬空的微桥结构7。该微桥结构7可以包括周缘部分71、中心部分72和连接周缘部分71和中心部分72的连接部分73。微桥结构的周缘部分71支撑在介质覆盖层5上，中心部分72远离介质覆盖层5并通过连接部分73与周缘部分71连接。这样，该微桥结构7形成相对于介质覆盖层5悬空的结构。 In step 40 , suspended micro-bridge structures 7 may be formed on the dielectric covering layer 5 . The micro-bridge structure 7 may include a peripheral portion 71 , a central portion 72 and a connection portion 73 connecting the peripheral portion 71 and the central portion 72 . The peripheral portion 71 of the micro-bridge structure is supported on the dielectric covering layer 5 , and the central portion 72 is away from the dielectric covering layer 5 and connected to the peripheral portion 71 through a connecting portion 73 . In this way, the micro-bridge structure 7 forms a suspended structure relative to the dielectric covering layer 5 .
本发明的一些实施例中，微桥结构7可以由氮化硅、氧化硅或多层复合薄膜形成。 In some embodiments of the present invention, the micro-bridge structure 7 may be formed of silicon nitride, silicon oxide or multi-layer composite films.
在本步骤中，可以在介质覆盖层5上形成牺牲层6，然后在牺牲层6上形成微桥结构7。最后，去除牺牲层6，即形成了具有前述的悬空结构的微桥结构7。牺牲层6的材料可以为氧化硅或者光敏聚酰亚胺(PSPI)。 In this step, a sacrificial layer 6 can be formed on the dielectric covering layer 5 , and then a micro-bridge structure 7 can be formed on the sacrificial layer 6 . Finally, the sacrificial layer 6 is removed, that is, the micro-bridge structure 7 having the aforementioned suspended structure is formed. The material of the sacrificial layer 6 may be silicon oxide or photosensitive polyimide (PSPI).
在步骤50中，可以在微桥结构7的中心部分72上形成太赫兹辐射吸收层8。 In step 50 , a terahertz radiation absorbing layer 8 may be formed on the central portion 72 of the micro-bridge structure 7 .
根据本发明的实施例的方法制造的该太赫兹微测辐射热计中，微桥结构7的中心部分72至光敏聚酰亚胺层4（例如，如图2中箭头20所示）形成了光学谐振腔。通过调节光敏聚酰亚胺层4的厚度，可以使光学谐振腔满足具有“1/4波长”的有效光学谐振器高度，从而有效地提高对太赫兹辐射吸收层8对太赫兹辐射的吸收率。 In the terahertz microbolometer manufactured according to the method of the embodiment of the present invention, the central part 72 of the microbridge structure 7 to the photosensitive polyimide layer 4 (for example, as shown by the arrow 20 in FIG. 2 ) forms a Optical cavity. By adjusting the thickness of the photosensitive polyimide layer 4, the optical resonant cavity can meet the effective optical resonator height of "1/4 wavelength", thereby effectively improving the absorption rate of the terahertz radiation absorption layer 8 to the terahertz radiation .
例如，本发明的一些实施例中，光敏聚酰亚胺层的厚度满足从该光敏聚酰亚胺层4与金属反射层2接触的位置到微桥结构7的中心部分72的距离（例如，图2中的箭头20所示的距离T）为太赫兹辐射的波长的四分之一。 For example, in some embodiments of the present invention, the thickness of the photosensitive polyimide layer satisfies the distance from the position where the photosensitive polyimide layer 4 is in contact with the metal reflective layer 2 to the central portion 72 of the microbridge structure 7 (for example, The distance T) indicated by the arrow 20 in FIG. 2 is a quarter of the wavelength of the terahertz radiation.
本发明的一些实施例中，还可以在微桥结构7上形成金属电极层11，该金属电极层11连接太赫兹辐射吸收层8和前述的光敏聚酰亚胺层4中的金属电极和金属引线3，以将太赫兹辐射吸收层8的输出信号输出。 In some embodiments of the present invention, a metal electrode layer 11 can also be formed on the microbridge structure 7, and the metal electrode layer 11 connects the metal electrode and the metal electrode in the terahertz radiation absorbing layer 8 and the aforementioned photosensitive polyimide layer 4. The lead wire 3 is used to output the output signal of the terahertz radiation absorbing layer 8 .
本发明的实施例中，金属电极和引线3和金属电极层11可以由铝、钛或者镍铬合金等材料形成。 In the embodiment of the present invention, the metal electrodes and lead wires 3 and the metal electrode layer 11 may be formed of materials such as aluminum, titanium or nickel-chromium alloy.
本发明的一些实施例中，还可以在太赫兹辐射吸收层8上形成介质层9和金属吸收层10。介质层9可以为氮化硅或者氧化硅。金属吸收层10可以为钛或者镍镉合金等等。 In some embodiments of the present invention, the dielectric layer 9 and the metal absorption layer 10 can also be formed on the terahertz radiation absorption layer 8 . The dielectric layer 9 can be silicon nitride or silicon oxide. The metal absorption layer 10 can be titanium or nickel-cadmium alloy or the like.
根据本发明一些实施例的方法制造的太赫兹微测辐射热计的结构如图2所示。该太赫兹微测辐射热计包括衬底1、金属反射层2、光敏聚酰亚胺层4、介质覆盖层5、微桥结构7和太赫兹辐射吸收层8。 The structure of the terahertz microbolometer manufactured according to the method of some embodiments of the present invention is shown in FIG. 2 . The terahertz microbolometer includes a substrate 1 , a metal reflective layer 2 , a photosensitive polyimide layer 4 , a dielectric covering layer 5 , a microbridge structure 7 and a terahertz radiation absorbing layer 8 .
金属反射层2形成在衬底1上。光敏聚酰亚胺层4形成在金属反射层2上，并且该光敏聚酰亚胺层4中形成有金属电极和金属引线3。 Metal reflective layer 2 is formed on substrate 1 . A photosensitive polyimide layer 4 is formed on the metal reflective layer 2 , and metal electrodes and metal leads 3 are formed in the photosensitive polyimide layer 4 .
介质覆盖层5形成在光敏聚酰亚胺层4上并覆盖该光敏聚酰亚胺层4。一些实施例中，该介质覆盖层5完全覆盖该光敏聚酰亚胺层4。 The dielectric cover layer 5 is formed on the photosensitive polyimide layer 4 and covers the photosensitive polyimide layer 4 . In some embodiments, the dielectric covering layer 5 completely covers the photosensitive polyimide layer 4 .
微桥结构7形成在介质覆盖层上4，并且微桥结构7的周缘部分71支撑在介质覆盖层4上，微桥结构7的中心部分72远离介质覆盖层4并通过连接部分73与周缘部分71连接。 The micro-bridge structure 7 is formed on the dielectric covering layer 4, and the peripheral portion 71 of the micro-bridge structure 7 is supported on the dielectric covering layer 4, and the central portion 72 of the micro-bridge structure 7 is far away from the dielectric covering layer 4 and passes through the connecting portion 73 and the peripheral portion 71 connections.
太赫兹辐射吸收层8形成在微桥结构7的中心部分72上。 The terahertz radiation absorbing layer 8 is formed on the central portion 72 of the micro-bridge structure 7 .
一些实施例中，从该光敏聚酰亚胺层4与金属反射层2接触的位置到微桥结构7的中心部分72的距离为太赫兹辐射的波长的四分之一。 In some embodiments, the distance from the position where the photosensitive polyimide layer 4 is in contact with the metal reflective layer 2 to the central portion 72 of the micro-bridge structure 7 is a quarter of the wavelength of the terahertz radiation.
一些实施例中，微桥结构7上还形成有金属电极层11，该金属电极层11连接太赫兹辐射吸收层8和光敏聚酰亚胺层4中的金属电极和金属引线3。 In some embodiments, a metal electrode layer 11 is formed on the micro-bridge structure 7 , and the metal electrode layer 11 connects the metal electrodes and the metal leads 3 in the terahertz radiation absorbing layer 8 and the photosensitive polyimide layer 4 .
一些实施例中，太赫兹辐射吸收层8上还形成有介质层9和金属吸收层10。 In some embodiments, a dielectric layer 9 and a metal absorption layer 10 are further formed on the terahertz radiation absorption layer 8 .
本发明的实施例中的太赫兹微测辐射热计增加了光敏聚酰亚胺层和介质层，在介质层上形成悬空的微桥结构，微桥结构顶层制备有太赫兹辐射吸收层。通过调整光敏聚酰亚胺层厚度，可以使微桥结构获得满足“1/4波长”的有效光学谐振器高度，从而增强太赫兹辐射吸收层的吸收效率。介质层完整覆盖光敏聚酰亚胺层，保证其在上层微桥结构中牺牲层释放时不被去除，形成良好的力学支撑。该微桥结构有效解决较高的光学谐振腔与高落差下的稳定电学连通之间的矛盾，显著提高微桥结构的太赫兹辐射吸收率，工艺实现难度小。 In the terahertz microbolometer in the embodiment of the present invention, a photosensitive polyimide layer and a medium layer are added, and a suspended micro-bridge structure is formed on the medium layer, and a terahertz radiation absorption layer is prepared on the top layer of the micro-bridge structure. By adjusting the thickness of the photosensitive polyimide layer, the microbridge structure can obtain an effective optical resonator height satisfying "1/4 wavelength", thereby enhancing the absorption efficiency of the terahertz radiation absorbing layer. The dielectric layer completely covers the photosensitive polyimide layer to ensure that it will not be removed when the sacrificial layer is released in the upper microbridge structure, forming a good mechanical support. The microbridge structure effectively solves the contradiction between a higher optical resonant cavity and stable electrical connection under high drop, significantly improves the terahertz radiation absorption rate of the microbridge structure, and the process is less difficult to realize.
以上通过具体的实施例对本发明进行了说明，但本发明并不限于这些具体的实施例。本领域技术人员应该明白，还可以对本发明做各种修改、等同替换、变化等等，这些变换只要未背离本发明的精神，都应在本发明的保护范围之内。此外，以上多处所述的“一个实施例”表示不同的实施例，当然也可以将其全部或部分结合在一个实施例中。 The present invention has been described above through specific examples, but the present invention is not limited to these specific examples. Those skilled in the art should understand that various modifications, equivalent replacements, changes, etc. can also be made to the present invention. As long as these changes do not deviate from the spirit of the present invention, they should all be within the protection scope of the present invention. In addition, "one embodiment" described in many places above represents different embodiments, and of course all or part of them may be combined in one embodiment.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510503644.7A CN105157854A (en) | 2015-08-17 | 2015-08-17 | Terahertz micro bolometer and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510503644.7A CN105157854A (en) | 2015-08-17 | 2015-08-17 | Terahertz micro bolometer and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105157854A true CN105157854A (en) | 2015-12-16 |
Family
ID=54798792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510503644.7A Pending CN105157854A (en) | 2015-08-17 | 2015-08-17 | Terahertz micro bolometer and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105157854A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108358157A (en) * | 2018-02-28 | 2018-08-03 | 电子科技大学 | A kind of Meta Materials micro-bridge structure and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1168119A (en) * | 1997-08-11 | 1999-03-09 | Nec Corp | Production of silicon microsensor |
| CN102426060A (en) * | 2011-08-26 | 2012-04-25 | 电子科技大学 | Terahertz or infrared micro-bolometer and manufacturing method thereof |
| US20140048708A1 (en) * | 2012-08-20 | 2014-02-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Bolometric detector of an electromagnetic radiation in the terahertz range and array detection device comprising such detectors |
| CN103606585A (en) * | 2013-11-25 | 2014-02-26 | 电子科技大学 | Terahertz room temperature detector with high-absorbability structure and manufacturing method thereof |
| WO2014135749A1 (en) * | 2013-03-05 | 2014-09-12 | Teknologian Tutkimuskeskus Vtt | Superconducting thermal detector (bolometer) of terahertz (sub-millimeter wave) radiation |
-
2015
- 2015-08-17 CN CN201510503644.7A patent/CN105157854A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1168119A (en) * | 1997-08-11 | 1999-03-09 | Nec Corp | Production of silicon microsensor |
| CN102426060A (en) * | 2011-08-26 | 2012-04-25 | 电子科技大学 | Terahertz or infrared micro-bolometer and manufacturing method thereof |
| US20140048708A1 (en) * | 2012-08-20 | 2014-02-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Bolometric detector of an electromagnetic radiation in the terahertz range and array detection device comprising such detectors |
| WO2014135749A1 (en) * | 2013-03-05 | 2014-09-12 | Teknologian Tutkimuskeskus Vtt | Superconducting thermal detector (bolometer) of terahertz (sub-millimeter wave) radiation |
| CN103606585A (en) * | 2013-11-25 | 2014-02-26 | 电子科技大学 | Terahertz room temperature detector with high-absorbability structure and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| HU TAO等: "Highly flexible wide angle of incidence terahertz metamaterial absorber: Design, fabrication, and characterization", 《PHYSICAL REVIEW B》 * |
| NAOKI ODA等: "Performance of THz Cameras with Enhanced Sensitivity in Sub-Terahertz Region", 《PROC. OF SPIE》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108358157A (en) * | 2018-02-28 | 2018-08-03 | 电子科技大学 | A kind of Meta Materials micro-bridge structure and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104143580B (en) | A kind of terahertz wave detector and preparation method thereof | |
| CN101702067B (en) | Terahertz plane adsorbing material | |
| CN103193190B (en) | Infrared-terahertz dual-band array detector microbridge structure and preparation method thereof | |
| CN102529211A (en) | Film system structure for enhancing Terahertz radiation absorption rate and preparation method thereof | |
| US11874218B2 (en) | Metamaterial-based IR emitter having modulatable emissivity | |
| CN103606585B (en) | A kind of Terahertz room temperature creep of high-selenium corn structure and preparation method | |
| CN104111110B (en) | The cross Terahertz absorbing structure of top expansion and application thereof | |
| CN104953223B (en) | A kind of helical antenna coupling micro-bridge structure and preparation method thereof | |
| CN105129717A (en) | Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof | |
| US20170261377A1 (en) | Bi-material terahertz sensor and terahertz emitter using metamaterial structures | |
| CN103940518B (en) | A low thermal conductivity terahertz detection unit microbridge structure and its preparation method | |
| CN106082106B (en) | A kind of broadband non-refrigerated infrared detector and preparation method thereof | |
| CN106129167B (en) | A kind of graphene terahertz detector and preparation method thereof | |
| CN107275796A (en) | A kind of THz wave wave-absorber, preparation method and application | |
| CN103855228A (en) | Terahertz detector based on optical antenna | |
| CN106115604A (en) | Terahertz micro-metering bolometer based on metamaterial structure and preparation method thereof | |
| Mbarek et al. | Recent advances on MEMS based Infrared Thermopile detectors | |
| CN105393097A (en) | An apparatus for sensing | |
| CN108358157B (en) | Metamaterial microbridge structure and preparation method thereof | |
| CN105811061B (en) | A kind of bridge leg separate antenna coupling micro-bridge structure and preparation method thereof | |
| CN108831988A (en) | An uncooled terahertz detector with adjustable working frequency | |
| CN105157854A (en) | Terahertz micro bolometer and manufacture method thereof | |
| Alkorjia et al. | Metasurface-enabled uncooled silicon germanium oxide infrared microbolometers for long-wave infrared detection | |
| CN110095185A (en) | A kind of THz wave detection micro-bridge structure of integrated sub-wavelength metal ring absorbing structure and preparation method thereof | |
| CN108365345B (en) | Antenna structure for terahertz microbolometer and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151216 |