CN105132974A - Electroplating method - Google Patents
Electroplating method Download PDFInfo
- Publication number
- CN105132974A CN105132974A CN201410238786.0A CN201410238786A CN105132974A CN 105132974 A CN105132974 A CN 105132974A CN 201410238786 A CN201410238786 A CN 201410238786A CN 105132974 A CN105132974 A CN 105132974A
- Authority
- CN
- China
- Prior art keywords
- seed layer
- crystal seed
- plating
- electroplating
- layering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000009713 electroplating Methods 0.000 title claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
The invention relates to the electroplating field, and especially relates to an electroplating method. The method comprises the following steps: determining the thickness of an electroplating layer, and providing a substrate, wherein a crystal seed layer is formed on the surface of the substrate; putting the substrate with the crystal seed layer in a liquid tank with the liquid having a pH value of 5-9, and executing an electrolysis operation; and sequentially carrying out at least two layer layering electroplating on the crystal seed layer, and annealing after the formation of every electroplated layer. An electroplated layer formation step is decomposed into the layering electroplating step of at least two layers, so stress is released in steps at step interval between the layering electroplating processes, thereby the electroplated layers have few holes; and additionally, the electrolysis step removes particles attached to the crystal seed layer in the time interval between formation of the crystal seed layer and the electroplating process, so discontinuousness of the electroplated layers due to the existence of the particles and the electroplating hole phenomenon caused by the discontinuousness are reduced.
Description
Technical field
The present invention relates to field of electroplating, particularly relate to a kind of electro-plating method.
Background technology
In traditional technology, application electroplating technology forms the interconnecting metal layer (as copper) between device and external circuit usually, and the step utilizing traditional technology to perform electroplating operations comprises: determine plating thickness and provide substrate; Described substrate surface is formed with crystal seed layer; Described crystal seed layer forms electrolytic coating.
For improving the effect of subsequent chemical mechanical grinding (CMP) and wafer acceptability test (WAT) and reliability testing, usually after formation electrolytic coating, need perform annealing operation: annealing temperature is 200 degrees Celsius, anneal duration is 90 seconds.But, find, after experiencing above-mentioned annealing operation, in the interconnecting metal layer formed, easily to there is hole, for the interconnecting metal layer of thicker (if thickness is more than 3 microns), particularly seriously in actual production.
Summary of the invention
The object of the invention is to propose a kind of electro-plating method, the existence of electrolytic coating Hole can be reduced.
For reaching this object, the present invention by the following technical solutions:
A kind of electro-plating method, comprising:
Step a, determine plating thickness and provide substrate, described substrate surface is formed with crystal seed layer;
Step b, the liquid tank that pH value is 5-9 is put in the substrate with crystal seed layer, with described crystal seed layer for anode, perform electrolysis procedure;
Step c, order performs at least two-layer plating layering on described crystal seed layer operation and be placed in the described plating layering of each formation operation after annealing operation, the thickness of each described plating layering and equal described plating thickness.
Wherein, described seed layer material is copper or tin.
Wherein, the time length of described electrolysis procedure is 5-15 second.
Wherein, the processing parameter of described annealing operation comprises: temperature range is 250 DEG C to 350 DEG C, 60 seconds to 100 seconds time length.
Wherein, the thickness of described plating layering is equal.
Beneficial effect of the present invention is: a kind of electro-plating method, comprising: determine plating thickness and provide substrate, and described substrate surface is formed with crystal seed layer, the liquid tank that pH value is 5-9 is put in substrate with crystal seed layer, with described crystal seed layer for anode, performs electrolysis procedure, the operation that order performs at least two-layer plating layering on described crystal seed layer and be placed in the described plating layering of each formation operation after annealing operation, the thickness of each described plating layering and equal described plating thickness, the present invention is by being decomposed into the step of at least two-layer described plating layering of formation by the step forming described electrolytic coating, and annealing operation is performed after the operation forming described plating layering, the described annealing operation of experience can be made and the stress that increases in each described plating layering is discharged step by step in the step interval forming a described plating layering, by reducing the stress of described electrolytic coating, described electrolytic coating is made to have less hole, in addition, electrolysis procedure also been removed and be attached to particulate on described crystal seed layer, the generation of the electrolytic coating that the existence decreasing described particulate causes discontinuous and consequent plating hole phenomenon within the timed interval forming described crystal seed layer and start electroplating process.
Accompanying drawing explanation
Fig. 1 is a kind of electro-plating method schema that the specific embodiment of the invention provides.
Embodiment
Technical scheme of the present invention is further illustrated by embodiment below in conjunction with Fig. 1.
Fig. 1 is a kind of electro-plating method schema that the specific embodiment of the invention provides.
A kind of electro-plating method, comprising:
Step a, determine plating thickness and provide substrate, described substrate surface is formed with crystal seed layer;
Step b, the liquid tank that pH value is 5-9 is put in the substrate with crystal seed layer, with described crystal seed layer for anode, perform electrolysis procedure;
Step c, order performs at least two-layer plating layering on described crystal seed layer operation and be placed in the described plating layering of each formation operation after annealing operation, the thickness of each described plating layering and equal described plating thickness.
In the present embodiment, described plating thickness mean for obtain meet product design requirement plating thickness a and in actual production preformed plating thickness b (b is greater than a), particularly, if according to design requirements, the thickness of a certain electrolytic coating in product should be 2 microns, in so actual processing procedure, for obtaining the electrolytic coating that this thickness is 2 microns, the electrolytic coating that thickness is greater than 2 microns (as 3 microns) need be pre-formed, unnecessary electrolytic coating is removed again by subsequent steps such as grindings, to obtain the electrolytic coating meeting product design requirement, now, described plating thickness refers to the above-mentioned electrolytic coating being greater than 2 microns (as 3 microns).
In the present embodiment, before execution electroplating operations, perform electrolysis procedure in advance, electrolysis procedure eliminated and be attached to particulate on described crystal seed layer within the timed interval forming described crystal seed layer and start electroplating process, enhance the surface smoothness of crystal seed layer, the generation of the electrolytic coating that the existence decreasing described particulate causes discontinuous and consequent plating hole phenomenon.
In the present embodiment, the pH value of the liquid in liquid tank is 5-9, as 5,6,7,8,9, particularly, described liquid can be dilution sulfuric acid and or hydrochloric acid soln, one in ammoniacal liquor or deionized water, described liquid is as the ionogen of described electrolysis procedure, described crystal seed layer is anode, negative electrode can be the solid copper billet be immersed in described liquid, after applying voltage, described particulate is under the effect of reversed electric field power, electrostatic adsorption is destroyed, weakening or eliminating due to described electrostatic adsorption, and, the substrate with described crystal seed layer is inverted in described liquid when performing described electrolysis procedure, described for disengaging crystal seed layer enters in liquid by the described particulate being.
In the present embodiment, described seed layer material is copper or tin.
In the present embodiment, the time length of described electrolysis procedure is 5-15 second.
In the present embodiment, the processing parameter of described annealing operation comprises: temperature range is 250 DEG C to 350 DEG C, 60 seconds to 100 seconds time length.
In the present embodiment, the thickness of described plating layering is equal.
The foregoing is only the specific embodiment of the present invention, these describe just in order to explain principle of the present invention, and can not with any interpretation of structure for limiting the scope of the invention.Based on explanation herein, those skilled in the art does not need to pay performing creative labour can associate other specific implementation method of the present invention, and these structures all will fall within protection scope of the present invention.
Claims (5)
1. an electro-plating method, is characterized in that, comprising:
Step a, determine plating thickness and provide substrate, described substrate surface is formed with crystal seed layer;
Step b, the liquid tank that pH value is 5-9 is put in the substrate with crystal seed layer, with described crystal seed layer for anode, perform electrolysis procedure;
Step c, order performs at least two-layer plating layering on described crystal seed layer operation and be placed in the described plating layering of each formation operation after annealing operation, the thickness of each described plating layering and equal described plating thickness.
2. a kind of electro-plating method according to claim 1, is characterized in that, described seed layer material is copper or tin.
3. a kind of electro-plating method according to claim 1, is characterized in that, the time length of described electrolysis procedure is 5-15 second.
4. a kind of electro-plating method according to claim 1, is characterized in that, the processing parameter of described annealing operation comprises: temperature range is 250 DEG C to 350 DEG C, 60 seconds to 100 seconds time length.
5. a kind of electro-plating method according to claim 1, is characterized in that, the thickness of described plating layering is equal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410238786.0A CN105132974A (en) | 2014-05-30 | 2014-05-30 | Electroplating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410238786.0A CN105132974A (en) | 2014-05-30 | 2014-05-30 | Electroplating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105132974A true CN105132974A (en) | 2015-12-09 |
Family
ID=54718535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410238786.0A Pending CN105132974A (en) | 2014-05-30 | 2014-05-30 | Electroplating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105132974A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786478A (en) * | 2017-11-15 | 2019-05-21 | 福建钧石能源有限公司 | A kind of electrode preparation of hetero-junction solar cell and heat treatment method |
| CN118841475A (en) * | 2023-04-23 | 2024-10-25 | 环晟光伏(江苏)有限公司 | Single-welded battery piece, preparation method thereof, battery string and photovoltaic module |
-
2014
- 2014-05-30 CN CN201410238786.0A patent/CN105132974A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786478A (en) * | 2017-11-15 | 2019-05-21 | 福建钧石能源有限公司 | A kind of electrode preparation of hetero-junction solar cell and heat treatment method |
| CN118841475A (en) * | 2023-04-23 | 2024-10-25 | 环晟光伏(江苏)有限公司 | Single-welded battery piece, preparation method thereof, battery string and photovoltaic module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8968548B2 (en) | Method of forming multicolor surface | |
| CN103484913A (en) | Aluminum alloy hard anodic oxidization treating process | |
| CN104451797B (en) | The tin plating processing method of a kind of Tellurobismuthite. matrix and a kind of supplement | |
| CN105492659A (en) | Method for manufacturing metal-filled microstructure | |
| CN103866358B (en) | Rustless steel copper coating | |
| JP6768088B2 (en) | Etching method of electrode foil for low-voltage aluminum electrolytic capacitors with low contact resistance | |
| CN103456685B (en) | Manufacturing method for TSV and first layer re-wiring layer with no need of CMP | |
| CN101503801A (en) | Aluminum foil corrosion technique for electrolytic capacitor | |
| CN102061503A (en) | Electrolytic phosphating method for steel wires | |
| CN103556194A (en) | Surface treatment process for aluminum alloy | |
| CN103361688A (en) | Sanitary product surface treatment method | |
| KR101402450B1 (en) | Substrate for mounting semiconductor element and method for manufacturing the substrate | |
| CN104241025B (en) | A kind of multiple layer nickel plating method of relay1 case | |
| CN101730391B (en) | Circuit board micro-etching method to avoid galvanic corrosion effect | |
| CN105132974A (en) | Electroplating method | |
| CN110306220B (en) | Connector plating process | |
| CN104099658A (en) | Auxiliary anode for use in acid zinc-nickel alloy electroplating | |
| CN105244271A (en) | Method for reducing plating defects of thick film | |
| CN104294335A (en) | Activation process for nickel plating pretreatment of aluminum alloy used for electronic devices | |
| CN109518240A (en) | A kind of Microvia electro-plating pre-treatment method | |
| CN109252197B (en) | Method for electroplating silver on carburized part | |
| KR20110024628A (en) | Analytical Sample Manufacturing Method for Detecting Metal Wiring in Semiconductor Devices | |
| CN110528042A (en) | A kind of semiconductor devices electro-plating method and the activated bath for plating | |
| CN105898994A (en) | Boring method for PCB (Printed Circuit Board) | |
| TWI722290B (en) | Manufacturing method of wiring board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151209 |
|
| WD01 | Invention patent application deemed withdrawn after publication |