CN105097742B - Wire bonding structure and wire bonding method - Google Patents
Wire bonding structure and wire bonding method Download PDFInfo
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- CN105097742B CN105097742B CN201410187038.4A CN201410187038A CN105097742B CN 105097742 B CN105097742 B CN 105097742B CN 201410187038 A CN201410187038 A CN 201410187038A CN 105097742 B CN105097742 B CN 105097742B
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- pad
- metal ball
- wire bonding
- wire
- ion bombardment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Abstract
This application provides a kind of wire bonding structure and wire bonding methods.The wire bonding structure includes: pad；Metal ball is fixed on pad；Bonding wire is wholely set with metal ball, and multiple recessed portions are distributed in the contact surface that pad is contacted with metal ball.Multiple recessed portions are set on the surface that pad is contacted with metal ball, and then increase the contact area between pad and metal ball, and original plane contact is replaced using the curved face contact of the application, resistance when removing between pad and metal ball is increased, and then efficiently solves the problems, such as the two removing；In addition, the application is improved to the surface texture of pad, amount of heat is not needed to be formed using techniques such as high-temperature heating, plating to the semiconductor device structure generation any influence newly formed, therefore ensure that the original structure and function of chip.
Description
Technical field
This application involves technical field of manufacturing semiconductors, in particular to a kind of wire bonding structure and wire bonding
Method.
Background technique
With being constantly progressive for semiconductor device fabrication process, traditional wire bonding mode is just gradually by new bonding work
Replaced skill, for chip bonding, wherein ball upper contact bonding (BSOB) technology has been widely used in chip
Bonding in.
BSOB technology includes the beginning of weld cycle, and soldering appliance (chopper) is moved to the position of the first spot welding, and first
Spot welding realizes that a metal ball is welded on chip bonding pad surface by heat and ultrasonic energy, and chopper is increased to the top of bank later
Position and the mobile bank form for forming needs, the second spot welding include stitch bond and draw buttock line, drawn after being bonded
Buttock line is that the formation in order to form a buttock line, for next bonding recycle metal ball is prepared.
Be using the advantages of BSOB technology: 1) temperature of metal ball is high, and good deformation is more readily formed in when bonding, with
Pad generates reliable interconnection；2) metal ball is relatively large in diameter, and can increase adhered area, improves bond strength；3) metal ball
Sonic oscillation, pressure can be prevented to be directly applied to chip surface, antidetonation protective effect is played to chip.
After leading wire bonding, after appearance test, wire bonding tensile test, performance of integrated circuits test passes, then
Carry out sealing cap.But this technology is primarily present following problem: 1) when leading wire bonding pulling force mistake occurs in outer lead end face
When low or rosin joint, for civil product, point solder carries out physics reinforcing at bonding point, for technical grade, army grade, aerospace
Grade product, then directly scrap or the use that degrades；2) when too low leading wire bonding pulling force or rosin joint occurs in chip surface pad, by
It in the reasons such as undersized, can not reinforce, then directly scrap or the use that degrades；3) for multilead integrated circuit, as long as wherein
There is bonding quality problem in a piece lead, will make entire product overall degradation or scrap, cause damages.
Adhesion strength between the metal ball formed using above-mentioned BSOB technology and pad still has certain deficiency, causes
Removing between metal ball and pad, in turn results in semiconductor device failure.Currently, to solve the above-mentioned problems, application No. is
200510003089.8 patent application increases electroplating work procedure before dress knot chip and pressure welding, and electroplating work procedure is with the side being sanded
Method removes the original metal layer in lead styletable face, then electronickelling, only the lead post part of plating integrated circuit pedestal, Shen
Number the active force between pad and metal ball please be reinforced using high temperature process for 201210246504.2 patent application, but on
It states that method is comparatively laborious, especially applies in the stringent chip of structural requirement, plating or high-temperature heating method may
The semiconductor structure formed is had an impact.
Summary of the invention
The application is intended to provide a kind of wire bonding structure and wire bonding method, with do not influence existing chip structure and
Solve the problems, such as that metal ball is easily peeled off with pad in the prior art on the basis of performance.
To achieve the goals above, according to the one aspect of the application, a kind of wire bonding structure is provided, comprising: weldering
Disk；Metal ball is fixed on pad；Bonding wire is wholely set with metal ball, the contact surface that pad is contacted with metal ball point
It is furnished with multiple recessed portions.
Further, the area ratio on the surface of above-mentioned contact surface and the separate metal ball of pad is 1.5:1~1.2:1.
Further, the depth of above-mentioned recessed portion is 50nm~100nm.
Further, above-mentioned pad is aluminum pad, and metal ball is gold goal or copper ball, and bonding wire is gold thread or copper wire.
According to further aspect of the application, a kind of wire bonding method is provided, wire bonding method includes: step
Pad is arranged in S1；Step S2 carries out ion bombardment to the surface of pad and forms recessed portion；And step S3, bonding wire is led to
Surface bond after crossing metal ball and ion bombardment.
Further, above-mentioned steps S2 uses argon ion bombardment.
Further, the rf frequency of above-mentioned ion bombardment is 13.56MHz, and the time of ion bombardment is 15s~30s.
Further, radio-frequency power 600W~800W of above-mentioned argon ion bombardment, the flow of argon ion is 500~
600sccm。
Further, above-mentioned steps S3 is implemented by the way of ultrasonic bond or thermocompression bonding.
Further, above-mentioned steps S3 includes: step S31, heats one end of bonding wire to form metal ball；Step
S32 by the surface after the bombardment of metal ball contact ions and presses to metal ball, the surface after making metal ball be fixed on ion bombardment
On.
Further, above-mentioned pad is aluminum pad, and metal ball is gold goal or copper ball, and bonding wire is gold thread or copper wire.
Using the technical solution of the application, multiple recessed portions are set on the surface of pad contacted with metal ball, in turn
The contact area between pad and metal ball is increased, and replaces original plane contact using the curved face contact of the application, is increased
Add resistance when removing between pad and metal ball, and then efficiently solves the problems, such as the two removing；In addition, the application is only
It is to be improved to the surface texture of pad, does not need to form amount of heat to newly using techniques such as high-temperature heating, plating
The semiconductor device structure of formation generates any influence, therefore ensure that the original structure and function of chip.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 shows the schematic diagram of the section structure for the wire bonding structure that a kind of preferred embodiment of the application provides；
Fig. 2 shows the amplified the schematic diagram of the section structure of part A in Fig. 1；
Fig. 3 shows the flow diagram of the wire bonding method of the application another kind preferred embodiment offer；
Fig. 4 to fig. 6 shows the schematic diagram of the section structure after each step of wire bonding method shown in implementing Fig. 3, wherein
Fig. 4 shows the schematic diagram of the section structure being arranged after pad in the metal portion of metal interconnection structure；
Fig. 5, which is shown, carries out the cross-section structure signal after ion bombardment forms recessed portion to the surface of pad shown in Fig. 4
Figure；And
Fig. 6, which is shown, passes through the section after the surface bond after metal ball and ion bombardment for bonding wire shown in fig. 5
Structural schematic diagram.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also be intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, being described as if the device in attached drawing is squeezed " in other devices
It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " may include " ... top " and
" in ... lower section " two kinds of orientation.The device can also be positioned with other different modes and (is rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
As background technique is introduced, the adhesion strength between the metal ball that existing BSOB technology is formed and pad is still deposited
In certain deficiency, lead to the removing between metal ball and pad, in turn results in semiconductor device failure, and current reinforcing is drawn
Between line and pad the method for adhesion strength it is cumbersome and it is easy established semiconductor structure is impacted, in order to not influence
Have and solves the problems, such as that metal ball is easily peeled off with pad in the prior art on the basis of chip structure and performance, present applicant proposes
A kind of wire bonding structure and wire bonding method.
In a kind of preferred embodiment of the application, a kind of wire bonding structure is provided, it as depicted in figs. 1 and 2, should
Wire bonding structure includes pad 100, metal ball 200 and bonding wire 300, and metal ball 200 is fixed on pad 100；Lead
300 are wholely set with metal ball 200, wherein recessed portion is distributed in the contact surface of pad 100 contacted with metal ball 200
101。
Wire bonding structure with above structure is arranged multiple on the surface of pad 100 contacted with metal ball 200
Recessed portion 101, and then the contact area between pad 100 and metal ball 200 is increased, and replace using the curved face contact of the application
Original plane contact is changed, increases resistance when removing between pad 100 and metal ball 200, and then efficiently solve two
The problem of person removes；In addition, the application is improved to the surface texture of pad 100, do not need using high-temperature heating, electricity
The techniques such as plating form amount of heat and generate any influence to the semiconductor device structure newly formed, therefore ensure that chip
Original structure and function.
The application in order to increase the contact area of pad 100 Yu metal ball 200 as much as possible, preferably above-mentioned contact surface with
The area ratio on the surface of the separate metal ball of pad is 1.5:1~1.2:1.In addition, in order to increase pad 100 and metal as far as possible
Resistance when removing between ball 200, the depth of preferably above-mentioned recessed portion 101 are 50~100nm.
The above-mentioned wire bonding structure of the application, the improvement that the wire bonding suitable for this field routine combines, wherein originally
Apply for that preferably above-mentioned pad 100 is aluminum pad, preferably above-mentioned metal ball 200 is gold goal or copper ball, preferably above-mentioned bonding wire 300
For gold thread or copper wire.
In the application another preferred embodiment, a kind of wire bonding method is provided, Fig. 3 shows the lead
The flow diagram of bonding method, the wire bonding method include: step S1, and pad 100 is arranged；Step S2, to pad 100
Surface carries out ion bombardment and forms recessed portion 101；And step S3, bonding wire 300 is passed through into metal ball 200 and ion bombardment
Surface bond afterwards.
Above-mentioned wire bonding method utilizes the surface of the ion bombardment pad 100 in plasma, which can interrupt
Chemical bond between 100 surface atom of pad, these atoms will be exposed in free radical caused by plasma, then from pad
100 surfaces are detached from, and then generate recessed portion 101 in the position of ion bombardment, so that the surface of pad 100 becomes concave-convex from plane
Surface, the area of convex-concave surface are greater than original plane, that is to say, that after ion bombardment pad 100 and metal ball 200 it
Between contact area increase, while resistance when removing between pad 100 and metal ball 200 also increases, and then effectively
Solves the problems, such as the two removing.In addition, the direction of ion bombardment is hung down with the surface bombarded as well known to art technology
Directly, that is to say, that as long as the guarded by location for not needing ion bombardment, which is got up, to have an impact existing semiconductor structure,
Therefore, above-mentioned production method will not generate any negative effect.
Now, the illustrative embodiments according to the application are more fully described with reference to the accompanying drawings.However, these are exemplary
Embodiment can be implemented by many different forms, and should not be construed to be limited solely to embodiment party set forth herein
Formula.It should be understood that it is thoroughly and complete to these embodiments are provided so that disclosure herein, and these are shown
The design of example property embodiment is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expands layer
With the thickness in region, and make that identical device is presented with like reference characters, thus description of them will be omitted.
It should be appreciated by the person skilled in the art that the wire bonding structure and wire bonding method of the application can be applied
During any integrated antenna package, below in order to more clearly illustrate the application wire bonding structure and wire bonding side
The effect of method preferably to be bonded in the conventional enterprising line lead of metal interconnection structure, and is formed and metal interconnection structure coupling
Wire bonding structure.The following description is also to be illustrated with the scheme for carrying out wire bonding with metal interconnection structure, can not
For limiting, explaining the application of the wire bonding structures and methods of the application.
Firstly, executing step S1, pad 100 shown in Fig. 4 is set.It should be appreciated by the person skilled in the art that metal
Interconnection structure 1 is coupled by wire bonding and external lead frame, and above-mentioned pad 100 should be with the metal of metal interconnection structure 1
Portion 11 is attached, i.e., pad 100 is arranged in the top with metal portion 11 of metal interconnection structure 1.Above-mentioned pad is set
100 process includes:
Passivation layer is set on the surface of metal interconnection structure 1；Then the passivation layer is performed etching, is mutually linked in metal
The top with metal portion 11 of structure 1 forms opening；Then into the opening with deposited metal material on passivation layer and to metal
Material carries out chemical-mechanical planarization (CMP), forms pad 100 shown in Fig. 4.The above process can be using this field routine
Deposition, etching, the condition of CMP carry out, and details are not described herein.The material for forming above-mentioned pad can use the material of this field routine
Material, the preferred metallic aluminium of the application.
Then, step S2 is executed, ion bombardment is carried out to the surface of pad 100 shown in Fig. 4 and forms recess shown in fig. 5
Portion 101.The ion bombardment of the process is the surface for pad 100, therefore can be to set on 100 surface of pad shown in Fig. 4
Photoresist layer 3 is set, processing then is patterned to photoresist layer 3 and is open with being formed in the top of pad 100, then in photoetching
The surface exposed to pad 100 carries out ion bombardment under the protection of glue-line 3, is formed on 100 script even curface of pad recessed
Concave portion 101.
The ion bombardment of above-mentioned steps S2 preferably uses argon ion bombardment, and argon gas is inert gas, in ion bombardment process
In will not generate decomposition collision, therefore excessive corrosion will not be generated to 100 surface of pad.
When selecting above-mentioned argon ion bombardment, the rf frequency of preferably above-mentioned ion bombardment is 13.56M Hz, ion bombardment
Time is 15~30s.
The application in order to formed depth be 50~100nm recessed portion 101, the preferably radio-frequency power 600W of argon ion bombardment
~800W, the flow of argon ion are 500~600sccm.
After forming convex-concave surface 101, after bonding wire 300 is passed through metal ball 200 and ion bombardment shown in fig. 5
Surface bond, form wire bonding structure shown in fig. 6.
Above-mentioned bonding process can be real by the way of ultrasonic bond commonly used in the art, thermocompression bonding or the raw bonding of heat
Existing, preferably above-mentioned steps S3 is implemented by the way of ultrasonic bond or thermocompression bonding.Wherein, it is excellent when bonding wire 300 is gold thread
Choosing uses thermocompression bonding, and being formed by metal ball 200 is gold goal；When bonding wire is copper wire, it is preferred to use ultrasonic bond, institute's shape
At metal ball be copper ball.
In another preferred embodiment of the application, the step S3 of above-mentioned wire bonding method includes: step S31,
One end of bonding wire 300 is heated to form metal ball 200；Step S32, by the surface after the bombardment of 200 contact ions of metal ball
And press to metal ball 200, on the surface after making metal ball 200 be fixed on ion bombardment.Using hot pressing after above-mentioned first hot melt
The metal of metal ball 200 and pad 100 can be formed metallurgical bonding, form more strict welding structure by mode.
It can be seen from the above description that the application the above embodiments realize following technical effect:
1), multiple recessed portions are arranged on the surface of pad contacted with metal ball in the wire bonding structure of the application, into
And the contact area between pad and metal ball is increased, and original plane contact is replaced using the curved face contact of the application,
Resistance when removing between pad and metal ball is increased, and then efficiently solves the problems, such as the two removing；
2), the application is improved to the surface texture of pad, is not needed using techniques such as high-temperature heating, plating,
It avoids these techniques and forms amount of heat to the semiconductor device structure generation any influence newly formed, therefore ensure that
The original structure and function of chip；
3), the direction of above-mentioned ion bombardment is preferably vertical with the surface bombarded, that is to say, that as long as ion will not needed
The guarded by location of bombardment, which gets up, to have an impact existing semiconductor structure, and therefore, above-mentioned production method, which will not generate, appoints
What is negatively affected.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (4)
1. a kind of wire bonding method, which is characterized in that the wire bonding method includes:
Pad is arranged in step S1；
Step S2 carries out ion bombardment to the surface of the pad and forms recessed portion；And
Step S3, the surface bond after bonding wire to be passed through to metal ball and the ion bombardment,
The step S2 uses argon ion bombardment, and the rf frequency of the ion bombardment is 13.56MHz, the ion bombardment
Time is 15s~30s, radio-frequency power 600W~800W of the argon ion bombardment, the flow of the argon ion is 500~
600sccm；The depth of the recessed portion is 50nm~100nm, the contact surface and institute that the pad is contacted with the metal ball
The area ratio for stating the surface far from the metal ball of pad is 1.5:1~1.2:1.
2. wire bonding method according to claim 1, which is characterized in that the step S3 uses ultrasonic bond or hot pressing
The mode of bonding is implemented.
3. wire bonding method according to claim 2, which is characterized in that the step S3 includes:
Step S31 heats one end of the bonding wire to form metal ball；
Step S32, surface after the metal ball to be contacted to the ion bombardment simultaneously press to the metal ball, make the metal
Ball is fixed on the surface after the ion bombardment.
4. wire bonding method according to claim 1, which is characterized in that the pad is aluminum pad, the metal ball
For gold goal or copper ball, the bonding wire is gold thread or copper wire.
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| CN201410187038.4A CN105097742B (en) | 2014-05-05 | 2014-05-05 | Wire bonding structure and wire bonding method |
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| CN201410187038.4A CN105097742B (en) | 2014-05-05 | 2014-05-05 | Wire bonding structure and wire bonding method |
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| CN105097742B true CN105097742B (en) | 2019-09-06 |
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| US10163801B2 (en) * | 2016-10-14 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of chip package with fan-out structure |
| CN111250863B (en) * | 2020-03-31 | 2021-06-29 | 格物感知（深圳）科技有限公司 | Special aluminum-free welding bonding process |
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| US5722826A (en) * | 1996-02-21 | 1998-03-03 | American Orthodontics Corporation | Bonding pad |
| CN1297398C (en) * | 2001-07-06 | 2007-01-31 | 钟渊化学工业株式会社 | Laminate and its producing method |
| US6696757B2 (en) * | 2002-06-24 | 2004-02-24 | Texas Instruments Incorporated | Contact structure for reliable metallic interconnection |
| US7015580B2 (en) * | 2003-11-25 | 2006-03-21 | International Business Machines Corporation | Roughened bonding pad and bonding wire surfaces for low pressure wire bonding |
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| CN101173751A (en) * | 2006-11-01 | 2008-05-07 | 亿达科技股份有限公司 | Metal substrate capable of bearing high temperature for light processing device and manufacturing method thereof |
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| US5816478A (en) * | 1995-06-05 | 1998-10-06 | Motorola, Inc. | Fluxless flip-chip bond and a method for making |
| US6683387B1 (en) * | 2000-06-15 | 2004-01-27 | Advanced Micro Devices, Inc. | Flip chip carrier package with adapted landing pads |
| TW201126664A (en) * | 2010-01-26 | 2011-08-01 | Powertech Technology Inc | Metal post chip connecting device and method free to use soldering material |
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