CN105047790B - A kind of practical high-power LED encapsulation structure - Google Patents
A kind of practical high-power LED encapsulation structure Download PDFInfo
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- CN105047790B CN105047790B CN201510498407.6A CN201510498407A CN105047790B CN 105047790 B CN105047790 B CN 105047790B CN 201510498407 A CN201510498407 A CN 201510498407A CN 105047790 B CN105047790 B CN 105047790B
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- 238000005538 encapsulation Methods 0.000 title claims abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 claims abstract description 29
- 239000010949 copper Substances 0.000 claims abstract description 29
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 14
- 239000011733 molybdenum Substances 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 239000002241 glass-ceramic Substances 0.000 claims abstract description 8
- 238000003466 welding Methods 0.000 claims abstract description 8
- 229910000679 solder Inorganic materials 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims abstract 7
- 239000000758 substrate Substances 0.000 claims abstract 7
- 239000002196 Pyroceram Substances 0.000 claims abstract 6
- 238000005476 soldering Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 6
- 238000000605 extraction Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 description 17
- 239000011521 glass Substances 0.000 description 10
- 230000005611 electricity Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Led Device Packages (AREA)
Abstract
Description
技术领域technical field
本发明属于LED封装技术领域，具体涉及一种实用的大功率LED封装结构。The invention belongs to the technical field of LED packaging, and in particular relates to a practical high-power LED packaging structure.
背景技术Background technique
随着半导体材料和封装工艺的提高,LED的光通量和出光效率逐渐提高,从而使固体光源成为可能,已广泛应用于交通灯、汽车照明、广告牌等特殊照明领域,并且逐渐向普通照明领域过渡,被公认为有望取代白炽灯、荧光灯的第四代光源。不同应用领域对LED光源提出更高要求,除了对LED出光效率、光色有不同的要求,而且对出光角度、光强分布有不同的要求。这不但需要上游芯片厂开发新半导体材料,提高芯片制作工艺,设计出满足要求的芯片,而且对下游封装厂提出更高要求,设计出满足一定光强分布的封装结构,提高LED外部的光利用率。LED封装是指发光芯片的封装，相比集成电路封装有较大不同。LED的封装不仅要求能够保护灯芯，而且还要能够透光。所以LED的封装对封装材料有特殊的要求。大功率LED封装由于结构和工艺复杂，并直接影响到LED的使用性能和寿命，一直是近年来的研究热点，特别是大功率白光LED封装更是研究热点中的热点。经过多年的发展，中国LED封装产业已趋于成熟，近几年LED封装企业积极过会上市，在资本市场及下游应用产业持续增长的需求助力下，企业规模扩张速度加快，产能高速增长。但是仍然存在很多问题，技术赶不上发达国家，创新不足，缺少适合大功率LED的产品，不利于产品的对外推广。With the improvement of semiconductor materials and packaging technology, the luminous flux and luminous efficiency of LEDs have gradually increased, making solid light sources possible. They have been widely used in traffic lights, automotive lighting, billboards and other special lighting fields, and are gradually transitioning to the general lighting field. , is recognized as the fourth-generation light source that is expected to replace incandescent and fluorescent lamps. Different application fields put forward higher requirements for LED light sources, not only have different requirements for LED light output efficiency and light color, but also have different requirements for light output angle and light intensity distribution. This not only requires the upstream chip factory to develop new semiconductor materials, improve the chip manufacturing process, and design a chip that meets the requirements, but also puts forward higher requirements for the downstream packaging factory to design a packaging structure that meets a certain light intensity distribution and improve the light utilization outside the LED. Rate. LED packaging refers to the packaging of light-emitting chips, which is quite different from integrated circuit packaging. The packaging of the LED is not only required to be able to protect the wick, but also to be able to transmit light. Therefore, LED packaging has special requirements for packaging materials. Due to the complex structure and process of high-power LED packaging, which directly affects the performance and life of LEDs, it has been a research hotspot in recent years, especially high-power white LED packaging is a hot spot among the research hotspots. After years of development, China's LED packaging industry has matured. In recent years, LED packaging companies have been actively listed on the market. With the help of the capital market and the continuous growth of demand from downstream application industries, the scale of enterprises has accelerated and production capacity has grown rapidly. However, there are still many problems. The technology cannot keep up with developed countries, the innovation is insufficient, and there is a lack of products suitable for high-power LEDs, which is not conducive to the external promotion of products.
发明内容Contents of the invention
本发明的目的就在于为了解决上述问题而提供一种实用的大功率LED封装结构。The object of the present invention is to provide a practical high-power LED packaging structure in order to solve the above problems.
本发明通过以下技术方案来实现上述目的：The present invention achieves the above object through the following technical solutions:
一种实用的大功率LED封装结构，包括倒装焊芯片、绝缘层、导电基层和光学透镜，可软焊底层上方设置有铜层，所述铜层上方设置有钼层，所述钼层上方设置有所述铜层，所述铜层上方一侧设置有耐高温玻璃，另一侧设置有所述导电基层，所述耐高温玻璃上方一侧设置有导线，另一侧设置有所述倒装焊芯片，所述导线上方设置有低温玻璃陶瓷，所述倒装焊芯片外部设置有所述光学透镜，所述导电基层上方设置有所述绝缘层，所述绝缘层上方设置有所述导线，所述导线上方设置有焊点。A practical high-power LED packaging structure, comprising a flip chip, an insulating layer, a conductive base layer and an optical lens, a copper layer is arranged above the solderable bottom layer, a molybdenum layer is arranged above the copper layer, and a molybdenum layer is arranged above the molybdenum layer The copper layer is provided, one side above the copper layer is provided with high-temperature-resistant glass, and the other side is provided with the conductive base layer, one side above the high-temperature-resistant glass is provided with wires, and the other side is provided with the inverted Soldering the chip, the low-temperature glass ceramic is arranged above the wire, the optical lens is arranged outside the flip chip, the insulating layer is arranged above the conductive base layer, and the wire is arranged above the insulating layer , a welding spot is arranged above the wire.
作为本发明的优选方案，所述铜层与所述可软焊底层连接，所述钼层夹在上下两个所述铜层之间。As a preferred solution of the present invention, the copper layer is connected to the solderable bottom layer, and the molybdenum layer is sandwiched between the upper and lower copper layers.
作为本发明的优选方案，所述耐高温玻璃与所述铜层连接，所述导电基层与所述铜层连接。As a preferred solution of the present invention, the high temperature resistant glass is connected to the copper layer, and the conductive base layer is connected to the copper layer.
作为本发明的优选方案，所述导线与所述耐高温玻璃连接，所述低温玻璃陶瓷与所述导线连接。As a preferred solution of the present invention, the wire is connected to the high temperature resistant glass, and the low temperature glass ceramic is connected to the wire.
作为本发明的优选方案，所述绝缘层与所述导电基层连接，所述导线与所述绝缘层连接，所述焊点与所述导线连接。As a preferred solution of the present invention, the insulating layer is connected to the conductive base layer, the wire is connected to the insulating layer, and the soldering point is connected to the wire.
本发明的有益效果在于：散热性能好，降低芯片结温，提高LED性能；提高出光效率，优化光束分布；具有较强的可靠性。The invention has the beneficial effects of: good heat dissipation performance, lower chip junction temperature, improved LED performance; improved light extraction efficiency, optimized beam distribution; and strong reliability.
附图说明Description of drawings
图1是本发明所述一种实用的大功率LED封装结构的结构图。FIG. 1 is a structural diagram of a practical high-power LED packaging structure described in the present invention.
图中：1、低温玻璃陶瓷；2、耐高温玻璃；3、铜层；4、倒装焊芯片；5、可软焊底层；6、钼层；7、导电基层；8、绝缘层；9、导线；10、焊点；11、光学透镜。In the figure: 1. Low temperature glass ceramics; 2. High temperature resistant glass; 3. Copper layer; 4. Flip chip; 5. Solderable bottom layer; 6. Molybdenum layer; 7. Conductive base layer; 8. Insulation layer; 9 , wire; 10, solder joint; 11, optical lens.
具体实施方式Detailed ways
下面结合附图对本发明作进一步说明：The present invention will be further described below in conjunction with accompanying drawing:
如图1所示，一种实用的大功率LED封装结构，包括倒装焊芯片4、绝缘层8、导电基层7和光学透镜11，可软焊底层5上方设置有铜层3，铜层3上方设置有钼层6，钼层6用于吸收芯片产生的热量，钼层6上方设置有铜层3，铜层3上方一侧设置有耐高温玻璃2，耐高温玻璃2可以承受LED工作时产生的高温，另一侧设置有导电基层7，导电基层7用于导电，耐高温玻璃2上方一侧设置有导线9，导线9用于导电，另一侧设置有倒装焊芯片4，倒装焊芯片4既是一种芯片互连技术，又是一种理想的芯片粘接技术，导线9上方设置有低温玻璃陶瓷1，倒装焊芯片4外部设置有光学透镜11，光学透镜11可以把LED集成光源配光曲线变成需要的配光曲线，导电基层7上方设置有绝缘层8，绝缘层8是指发热导线之间的绝缘材料层，主要用于隔离电线防止人们触电受伤，绝缘层8上方设置有导线9，导线9上方设置有焊点10。As shown in Figure 1, a practical high-power LED packaging structure includes a flip chip 4, an insulating layer 8, a conductive base layer 7 and an optical lens 11, and a copper layer 3 is arranged above the solderable base layer 5, and the copper layer 3 A molybdenum layer 6 is arranged on the top, and the molybdenum layer 6 is used to absorb the heat generated by the chip. A copper layer 3 is arranged on the top of the molybdenum layer 6, and a high-temperature-resistant glass 2 is arranged on the side above the copper layer 3. The high-temperature-resistant glass 2 can withstand LED working. The generated high temperature is provided with a conductive base layer 7 on the other side, and the conductive base layer 7 is used for conducting electricity. A wire 9 is arranged on one side above the high temperature resistant glass 2, and the wire 9 is used for conducting electricity. The other side is provided with a flip chip 4. The soldering chip 4 is not only a chip interconnection technology, but also an ideal chip bonding technology. A low-temperature glass ceramic 1 is arranged above the wire 9, and an optical lens 11 is arranged on the outside of the flip chip 4. The optical lens 11 can The light distribution curve of the LED integrated light source becomes the required light distribution curve. An insulating layer 8 is arranged above the conductive base layer 7. The insulating layer 8 refers to the insulating material layer between the heating wires. It is mainly used to isolate the wires to prevent people from being injured by electric shock. The insulating layer A wire 9 is arranged above the wire 9 , and a welding spot 10 is arranged above the wire 9 .
作为本发明的优选方案，铜层3与可软焊底层5连接，钼层6夹在上下两个铜层3之间，耐高温玻璃2与铜层3连接，导电基层7与铜层3连接，导线9与耐高温玻璃2连接，低温玻璃陶瓷1与导线9连接，绝缘层8与导电基层7连接，导线9与绝缘层8连接，焊点10与导线9连接。As a preferred solution of the present invention, the copper layer 3 is connected to the solderable bottom layer 5, the molybdenum layer 6 is sandwiched between the upper and lower copper layers 3, the high temperature resistant glass 2 is connected to the copper layer 3, and the conductive base layer 7 is connected to the copper layer 3 The wire 9 is connected to the high temperature resistant glass 2, the low temperature glass ceramic 1 is connected to the wire 9, the insulating layer 8 is connected to the conductive base layer 7, the wire 9 is connected to the insulating layer 8, and the solder joint 10 is connected to the wire 9.
以上显示和描述了本发明的基本原理、主要特征和优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其效物界定。The basic principles, main features and advantages of the present invention have been shown and described above. Those skilled in the art should understand that the present invention is not limited by the above-mentioned embodiments, and that described in the above-mentioned embodiments and the specification only illustrates the principles of the present invention, and the present invention will also have other functions without departing from the spirit and scope of the present invention. Variations and improvements all fall within the scope of the claimed invention. The protection scope of the present invention is defined by the appended claims and their effects.
Claims (1)
- A kind of 1. practical high-power LED encapsulation structure, it is characterised in that：Including upside-down mounting welding core（4）, insulating barrier（8）, it is conductive Basic unit（7）And optical lens（11）, solderable bottom（5）Top is provided with layers of copper（3）, the layers of copper（3）Top is provided with molybdenum Layer（6）, the molybdenum layer（6）Top is provided with the layers of copper（3）, the layers of copper（3）Upper side is provided with pyroceram （2）, opposite side is provided with the conductive substrate（7）, the pyroceram（2）Upper side is provided with wire（9）, opposite side It is provided with the upside-down mounting welding core（4）, the wire（9）Top is provided with low temperature glass ceramics（1）, the upside-down mounting welding core （4）Outside is provided with the optical lens（11）, the conductive substrate（7）Top is provided with the insulating barrier（8）, the insulation Layer（8）Top is provided with the wire（9）, the wire（9）Top is provided with solder joint（10）；The layers of copper（3）With it is described can Soft soldering bottom（5）Connection, the molybdenum layer（6）It is clipped in two layers of copper up and down（3）Between；The pyroceram（2）With institute State layers of copper（3）Connection, the conductive substrate（7）With the layers of copper（3）Connection；The wire（9）With the pyroceram（2） Connection, the low temperature glass ceramics（1）With the wire（9）Connection；The insulating barrier（8）With the conductive substrate（7）Connection, The wire（9）With the insulating barrier（8）Connection, the solder joint（10）With the wire（9）Connection.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1111567A (en) * | 1993-12-28 | 1995-11-15 | 日本电解株式会社 | Copper clad laminate, multilayer printed circuit board and their processing method |
| CN1707782A (en) * | 2004-06-10 | 2005-12-14 | 佶鸿电子股份有限公司 | A kind of heat dissipation substrate and its preparation method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3845925B2 (en) * | 1996-02-05 | 2006-11-15 | 住友電気工業株式会社 | Semiconductor device member using aluminum nitride substrate and method for manufacturing the same |
| JP5405731B2 (en) * | 2007-10-23 | 2014-02-05 | 日立コンシューマエレクトロニクス株式会社 | Light source module |
| CN102194968B (en) * | 2010-03-19 | 2013-04-24 | 佛山市奇明光电有限公司 | Light-emitting diode |
| CN102412361B (en) * | 2010-09-21 | 2016-06-08 | 佳胜科技股份有限公司 | Laminated heat dissipation substrate and electronic assembly structure using same |
| CN202018960U (en) * | 2010-12-10 | 2011-10-26 | 奉化市匡磊半导体照明有限公司 | Luminous chip packaging structure of insulating bottom plate |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1111567A (en) * | 1993-12-28 | 1995-11-15 | 日本电解株式会社 | Copper clad laminate, multilayer printed circuit board and their processing method |
| CN1707782A (en) * | 2004-06-10 | 2005-12-14 | 佶鸿电子股份有限公司 | A kind of heat dissipation substrate and its preparation method |
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Denomination of invention: A Practical Packaging Structure of High Power LED Effective date of registration: 20221101 Granted publication date: 20180112 Pledgee: Jiangmen Rural Commercial Bank Co.,Ltd. Jianghai central sub branch Pledgor: JIANGMEN ZHONGLIANG OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2022980020328 |