CN105040108B - The etching method of polysilicon solar cell - Google Patents
The etching method of polysilicon solar cell Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 19
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 12
- 238000005530 etching Methods 0.000 title 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000007864 aqueous solution Substances 0.000 claims abstract description 18
- 239000000654 additive Substances 0.000 claims abstract description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 11
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 8
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920000141 poly(maleic anhydride) Polymers 0.000 claims abstract description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 8
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims abstract description 8
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims abstract description 8
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims abstract description 8
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 7
- 230000000996 additive effect Effects 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 4
- 238000007664 blowing Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 6
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910004074 SiF6 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000000085 cashmere Anatomy 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
一种多晶硅太阳能电池的制绒方法,制绒水溶液包括:氢氟酸5‑20%,硝酸25‑55%,硅氟酸0.5‑5%,醋酸0.1‑0.5%,添加剂0.5‑1.5%,余量水;添加剂为:聚乙烯醇0.2‑0.8%,三乙醇胺0.1‑6%,水解聚马来酸酐1‑6%,聚乙烯吡咯烷酮0.05‑0.1%,余量水:制绒水溶液温度0‑30℃,将硅片置于水溶液中100‑300s,并同时进行超声震动,超声频率40‑60KHZ;取出置于氢氧化钠0.2‑0.5%、十二烷基苯磺酸钠0.5‑2%的清洗液中进行清洗、取出吹干即可。具有稳定性好,温度易于控制,多晶硅表面陷光效果好和电池的光电转化率高,绒面均匀、反射率低的优点。
A texturing method for polycrystalline silicon solar cells, the texturing aqueous solution includes: 5-20% hydrofluoric acid, 25-55% nitric acid, 0.5-5% silicofluoric acid, 0.1-0.5% acetic acid, 0.5-1.5% additives, and Measure water; additives are: polyvinyl alcohol 0.2-0.8%, triethanolamine 0.1-6%, hydrolyzed polymaleic anhydride 1-6%, polyvinylpyrrolidone 0.05-0.1%, balance water: texturing aqueous solution temperature 0-30 ℃, put the silicon chip in the aqueous solution for 100-300s, and perform ultrasonic vibration at the same time, the ultrasonic frequency is 40-60KHZ; take it out and wash it with 0.2-0.5% sodium hydroxide and 0.5-2% sodium dodecylbenzenesulfonate Wash in liquid, remove and blow dry. It has the advantages of good stability, easy temperature control, good light trapping effect on the polysilicon surface, high photoelectric conversion rate of the battery, uniform suede surface and low reflectivity.
Description
技术领域technical field
本发明涉及太阳能电池制备方法技术领域,具体涉及一种多晶硅太阳能电池的制绒方法。The invention relates to the technical field of solar cell preparation methods, in particular to a texturing method for polycrystalline silicon solar cells.
背景技术Background technique
多晶硅是熔融的单质硅在过冷条件下凝固时,硅原子以金刚石晶格形态排列成许多晶核,如这些晶核长成晶面取向不同的晶粒,则这些晶粒结合起来,就结晶成多晶硅。多晶硅由于各个晶粒的晶向不一样,不能像单晶硅一样采用碱腐蚀;为了得到良好的多晶硅绒面,目前有多种方法,比如反应离子刻蚀法、机械刻槽法和化学腐蚀法。其中化学腐蚀法,由于操作方便、重复性强,在工业化生产中得到了大规模的应用。其原理如下:主要采用酸制绒工艺,体系主要包括硝酸和氢氟酸,具体反应方程式如下:Polycrystalline silicon is when molten elemental silicon is solidified under supercooled conditions, silicon atoms are arranged in the form of diamond lattices to form many crystal nuclei, and if these crystal nuclei grow into crystal grains with different crystal plane orientations, these crystal grains combine to form crystallization into polysilicon. Polycrystalline silicon cannot be etched with alkali like monocrystalline silicon due to the different crystal orientations of each grain; in order to obtain a good polycrystalline silicon texture, there are currently many methods, such as reactive ion etching, mechanical grooving and chemical etching. . Among them, the chemical corrosion method has been widely used in industrial production due to its convenient operation and strong repeatability. The principle is as follows: mainly adopts the acid velvet process, the system mainly includes nitric acid and hydrofluoric acid, the specific reaction equation is as follows:
3Si+4HNO3——3SiO2+2H2O+4NO 3Si +4HNO3——3SiO2 + 2H2O + 4NO
SiO2+6HF——H2(SiF6)+2H2OSiO 2 +6HF——H 2 (SiF 6 )+2H 2 O
其中硝酸作为强的氧化剂,将硅养活成致密不溶于水的二氧化硅附着在硅片表面,阻止硝酸与硅的进一步反应,但二氧化硅可以与溶液中的氢氟酸发生反应,生产可溶于水的络合物H2(SiF6),导致二氧化硅破坏,此时硝酸与硅再次发生化学反应,硅片表面不断的被腐蚀,最终形成连续致密的“虫孔状”结构。虽然该方法不需要特定的反应设备,工艺也相对简单,制造成本低,但是此方法由于是纯化学反应、酸于硅片反应速度快、稳定性不容易控制,反应的温度等也是影响硅片制绒效果的关键因素,稍微控制不好会造成多晶硅表面陷光效果和电池的光电转化率低,电池绒面不均匀、反射率高等不足。Among them, nitric acid acts as a strong oxidizing agent, nourishes silicon into dense water-insoluble silicon dioxide and adheres to the surface of silicon wafers, preventing further reaction between nitric acid and silicon, but silicon dioxide can react with hydrofluoric acid in the solution, and the production can be The water-soluble complex H2 (SiF6) leads to the destruction of silicon dioxide. At this time, the chemical reaction between nitric acid and silicon occurs again, and the surface of the silicon wafer is continuously corroded, finally forming a continuous and dense "wormhole-like" structure. Although this method does not require specific reaction equipment, the process is relatively simple, and the manufacturing cost is low, but because this method is a pure chemical reaction, the reaction speed of the acid on the silicon wafer is fast, the stability is not easy to control, and the temperature of the reaction also affects the silicon wafer. The key factor of the texturing effect, if the control is not good, the light trapping effect on the polysilicon surface and the photoelectric conversion rate of the battery will be low, the texture of the battery will be uneven, and the reflectivity will be high.
发明内容Contents of the invention
本发明针对现有技术的上述不足,提供一种稳定性好,温度易于控制,多晶硅表面陷光效果好和电池的光电转化率高,绒面均匀、反射率低的多晶硅太阳能电池的制绒方法。The present invention aims at the above-mentioned deficiencies of the prior art, and provides a method for making texture of a polycrystalline silicon solar cell with good stability, easy temperature control, good light trapping effect on the surface of polycrystalline silicon, high photoelectric conversion rate of the battery, uniform textured surface and low reflectivity .
为了解决上述技术问题,本发明采用的技术方案为:一种多晶硅太阳能电池的制绒方法,步骤包括:In order to solve the above-mentioned technical problems, the technical solution adopted in the present invention is: a method for making texture of a polycrystalline silicon solar cell, the steps comprising:
(1)首先在制绒槽内配制制绒水溶液,配制原料包括:氢氟酸5-20wt%,硝酸25-55wt%,硅氟酸0.5-5wt%,醋酸0.1-0.5wt%,添加剂0.5-1.5wt%,余量为水;将上述各组分混合并搅拌均匀;(1) First, prepare the aqueous solution for velvet making in the velvet making tank, and the preparation raw materials include: 5-20wt% hydrofluoric acid, 25-55wt% nitric acid, 0.5-5wt% silicofluoric acid, 0.1-0.5wt% acetic acid, and 0.5-5% additives. 1.5wt%, the balance is water; mix and stir the above-mentioned components;
所述的添加剂组成为:聚乙烯醇0.2-0.8wt%,三乙醇胺0.1-6wt%,水解聚马来酸酐1-6wt%,聚乙烯吡咯烷酮0.05-0.1wt%,余量为水:The additives are composed of: polyvinyl alcohol 0.2-0.8wt%, triethanolamine 0.1-6wt%, hydrolyzed polymaleic anhydride 1-6wt%, polyvinylpyrrolidone 0.05-0.1wt%, and the balance is water:
(2)将步骤(1)的制绒水溶液维持温度为0-30℃,然后将多晶硅片置于上述水溶液中放置100-300s,并同时进行超声震动,超声频率40-60KHZ;然后取出置于氢氧化钠0.2-0.5wt%、十二烷基苯磺酸钠0.5-2wt%,余量为水构成的清洗液中进行清洗、取出吹干即可。(2) Maintain the temperature of the texturing aqueous solution in step (1) at 0-30°C, then place the polysilicon wafer in the above-mentioned aqueous solution for 100-300s, and perform ultrasonic vibration at the same time, with an ultrasonic frequency of 40-60KHZ; then take it out and place it in the 0.2-0.5 wt% of sodium hydroxide, 0.5-2 wt% of sodium dodecylbenzenesulfonate, and the rest in a cleaning solution composed of water for cleaning, taking out and blowing dry.
作为优选,所述的制绒槽内配制制绒水溶液,配制原料包括:氢氟酸10-15wt%,硝酸25-45wt%,硅氟酸0.5-1.5wt%,醋酸0.1-0.2wt%,添加剂0.5-1.0wt%,余量为水。As a preference, the velvet-making aqueous solution is prepared in the velvet-making tank, and the preparation raw materials include: hydrofluoric acid 10-15wt%, nitric acid 25-45wt%, silicofluoric acid 0.5-1.5wt%, acetic acid 0.1-0.2wt%, additives 0.5-1.0wt%, the balance is water.
作为优选,所述的添加剂组成为:聚乙烯醇0.2-0.5%,三乙醇胺0.1-0.8%,水解聚马来酸酐1-2%,聚乙烯吡咯烷酮0.05-0.08%,余量为水。Preferably, the additive composition is: 0.2-0.5% of polyvinyl alcohol, 0.1-0.8% of triethanolamine, 1-2% of hydrolyzed polymaleic anhydride, 0.05-0.08% of polyvinylpyrrolidone, and the balance is water.
本发明的优点和优异效果:Advantages and excellent effects of the present invention:
1.本发明的上述制备过程,在传统的氢氟酸、硝酸制绒液体中添加了硅氟酸、醋酸,二者可以起到缓蚀剂的作用,降低氢氟酸对多晶表面的快速腐蚀,从而增加制绒液体的稳定性和可控性;特别是醋酸的加入降低了整体的混合液浓度,从而降低腐蚀速率,同时减小了多晶硅片的表面张力,利于附着在多晶硅表面的气泡脱离,从而使得制绒液体与多晶硅片表面充分、均匀的接触,提高制绒效果和均匀度。此外,制绒过程采用超声震动,也可以实现将制绒过程附着在多晶硅表面的气泡脱离,防止对表面的遮蔽,实现各个角落均匀腐蚀,制备出较好的绒面。此外,本发明还在绒液中添加了添加剂,使得制备的绒面规则,反射率低,反应过程可控。1. In the above-mentioned preparation process of the present invention, fluorosilicic acid and acetic acid are added in traditional hydrofluoric acid and nitric acid texturizing liquid, both of which can play the role of corrosion inhibitor, reducing the rapid damage of hydrofluoric acid to the polycrystalline surface. Corrosion, thereby increasing the stability and controllability of the texturing liquid; especially the addition of acetic acid reduces the overall concentration of the mixed solution, thereby reducing the corrosion rate, and at the same time reduces the surface tension of the polysilicon wafer, which is beneficial to the air bubbles attached to the surface of the polysilicon Detachment, so that the texturing liquid can fully and evenly contact the surface of the polysilicon wafer, and improve the texturing effect and uniformity. In addition, ultrasonic vibration is used in the texturing process, which can also remove the air bubbles attached to the polysilicon surface during the texturing process, prevent the surface from being covered, achieve uniform corrosion at all corners, and prepare a better textured surface. In addition, the present invention also adds additives to the suede liquid, so that the prepared suede has regularity, low reflectivity and controllable reaction process.
2.本发明的制绒后的清洗液具有能有效去除杂质,表面清洗后一致性好,反射率低的优点。2. The cleaning solution after texture making of the present invention has the advantages of being able to effectively remove impurities, having good surface cleaning consistency and low reflectivity.
附图说明Description of drawings
图1本发明实施例1制备的硅片制绒微观图。Fig. 1 is a microscopic view of the textured silicon wafer prepared in Example 1 of the present invention.
图2本发明实施例2制备的硅片制绒微观图。Fig. 2 is a microscopic view of the textured silicon wafer prepared in Example 2 of the present invention.
具体实施方式detailed description
以下结合实施例对本发明作进一步具体描述,但不局限于此。The present invention will be further described in detail below in conjunction with the examples, but not limited thereto.
实施例采用的硅片为市售多晶硅硅片,尺寸为2×2cm,厚度180-200微米,电阻率为0.5-1.5Ω·cm。The silicon wafer used in the embodiment is a commercially available polycrystalline silicon wafer with a size of 2×2 cm, a thickness of 180-200 microns, and a resistivity of 0.5-1.5 Ω·cm.
实施例1Example 1
为了解决上述技术问题,本发明采用的技术方案为:一种多晶硅太阳能电池的制绒方法,步骤包括:In order to solve the above-mentioned technical problems, the technical solution adopted in the present invention is: a method for making texture of a polycrystalline silicon solar cell, the steps comprising:
(1)首先在制绒槽内配制制绒水溶液,配制原料包括:氢氟酸5wt%,硝酸25wt%,硅氟酸0.5wt%,醋酸0.1wt%,添加剂0.5wt%,余量为水;将上述各组分混合并搅拌均匀;(1) Firstly, prepare the aqueous solution of velvet in the velvet-making tank, and the preparation raw materials include: 5wt% hydrofluoric acid, 25wt% nitric acid, 0.5wt% silicofluoric acid, 0.1wt% acetic acid, 0.5wt% additive, and the balance is water; Mix the above components and stir evenly;
所述的添加剂组成为:聚乙烯醇0.5%,三乙醇胺0.2%,水解聚马来酸酐3%,聚乙烯吡咯烷酮0.06%,余量为水:The additives are composed of: 0.5% polyvinyl alcohol, 0.2% triethanolamine, 3% hydrolyzed polymaleic anhydride, 0.06% polyvinylpyrrolidone, and the balance is water:
(2)将步骤(1)的制绒水溶液维持温度为15℃,然后将多晶硅片置于上述水溶液中放置120s,并同时进行超声震动,超声频率40KHZ;然后取出置于氢氧化钠0.3%、十二烷基苯磺酸钠0.8%,余量为水构成的清洗液中进行清洗、取出吹干即可。(2) Maintain the temperature of the texturing aqueous solution in step (1) at 15°C, then place the polysilicon sheet in the aqueous solution for 120s, and simultaneously perform ultrasonic vibration at an ultrasonic frequency of 40KHZ; then take it out and place it in 0.3% sodium hydroxide, Sodium dodecylbenzene sulfonate 0.8%, the rest is water in the cleaning solution for cleaning, take it out and blow dry.
图1所示,本发明实施例制备的绒面,绒面尺寸均匀细小且比较均匀。As shown in Fig. 1, the suede surface prepared by the embodiment of the present invention has uniform, small and relatively uniform suede surface size.
实施例2Example 2
其它步骤同实施例1,区别在于:所述的制绒槽内配制制绒水溶液,配制原料包括:氢氟酸10wt%,硝酸45wt%,硅氟酸1.5wt%,醋酸0.2wt%,添加剂1.0wt%,余量为水。The other steps are the same as in Example 1, the difference is that: the velvet-making aqueous solution is prepared in the velvet-making tank, and the preparation raw materials include: 10wt% hydrofluoric acid, 45wt% nitric acid, 1.5wt% silicofluoric acid, 0.2wt% acetic acid, additives 1.0 wt%, and the balance is water.
所述的添加剂组成为:聚乙烯醇0.5%,三乙醇胺0.7%,水解聚马来酸酐1.5%,聚乙烯吡咯烷酮0.07%,余量为水。The additive is composed of: 0.5% of polyvinyl alcohol, 0.7% of triethanolamine, 1.5% of hydrolyzed polymaleic anhydride, 0.07% of polyvinylpyrrolidone, and the balance is water.
图2所示,本发明实施例制备的绒面,绒面尺寸均匀细小且比较均匀。As shown in Fig. 2, the suede surface prepared in the embodiment of the present invention has uniform, small and relatively uniform suede surface size.
对比例comparative example
(1)首先在制绒槽内配制制绒水溶液,配制原料包括:氢氟酸5wt%,硝酸25wt%,硅氟酸0.5wt%,添加剂0.5wt%,余量为水;将上述各组分混合并搅拌均匀;(1) at first prepare the aqueous solution for making cashmere in the cashmere-making tank, preparation raw material comprises: hydrofluoric acid 5wt%, nitric acid 25wt%, silicofluoric acid 0.5wt%, additive 0.5wt%, surplus is water; Above-mentioned each component Mix and stir well;
所述的添加剂组成为:聚乙烯醇0.5%,三乙醇胺0.2%,水解聚马来酸酐3%,聚乙烯吡咯烷酮0.06%,余量为水:The additives are composed of: 0.5% polyvinyl alcohol, 0.2% triethanolamine, 3% hydrolyzed polymaleic anhydride, 0.06% polyvinylpyrrolidone, and the balance is water:
(2)将步骤(1)的制绒水溶液维持温度为15℃,然后将多晶硅片置于上述水溶液中放置120s,并同时进行超声震动,超声频率40KHZ;然后取出置于氢氧化钠0.3%、十二烷基苯磺酸钠0.8%,余量为水构成的清洗液中进行清洗、取出吹干即可。(2) Maintain the temperature of the texturing aqueous solution in step (1) at 15°C, then place the polysilicon sheet in the aqueous solution for 120s, and simultaneously perform ultrasonic vibration at an ultrasonic frequency of 40KHZ; then take it out and place it in 0.3% sodium hydroxide, Sodium dodecylbenzene sulfonate 0.8%, the rest is water in the cleaning solution for cleaning, take it out and blow dry.
通过显微镜观察,对比例制备的产品,其绒面不均匀,与上述实施例1-2有限制差别。Observation through a microscope shows that the suede surface of the product prepared in the comparative example is uneven, and there are limited differences from the above-mentioned examples 1-2.
图1所示,本发明实施例制备的绒面,绒面尺寸均匀细小且比较均匀。As shown in Fig. 1, the suede surface prepared by the embodiment of the present invention has uniform, small and relatively uniform suede surface size.
本发明实施例1-2和对比例制备的电池性能参数见表2:The battery performance parameters prepared by Examples 1-2 of the present invention and comparative examples are shown in Table 2:
表2实施例1-2和对比例制备的电池性能参数Table 2 The battery performance parameters prepared by Examples 1-2 and Comparative Examples
从上述参数可知,本发明的方法制备的电池具有反射率低,能有效提高电池转换效率的优点。It can be seen from the above parameters that the battery prepared by the method of the present invention has the advantages of low reflectivity and can effectively improve the conversion efficiency of the battery.
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