CN105036564B - A kind of nanocrystalline enhancing tungsten oxide electrochomeric films and preparation method thereof - Google Patents
A kind of nanocrystalline enhancing tungsten oxide electrochomeric films and preparation method thereof Download PDFInfo
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910001930 tungsten oxide Inorganic materials 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 230000002708 enhancing effect Effects 0.000 title claims abstract 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 24
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 claims description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 7
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 6
- DAMJCWMGELCIMI-UHFFFAOYSA-N benzyl n-(2-oxopyrrolidin-3-yl)carbamate Chemical compound C=1C=CC=CC=1COC(=O)NC1CCNC1=O DAMJCWMGELCIMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- 229910001960 metal nitrate Inorganic materials 0.000 claims description 4
- KKKAMDZVMJEEHQ-UHFFFAOYSA-N [Sn].[N+](=O)(O)[O-] Chemical compound [Sn].[N+](=O)(O)[O-] KKKAMDZVMJEEHQ-UHFFFAOYSA-N 0.000 claims 4
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 238000005660 chlorination reaction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 11
- 239000011159 matrix material Substances 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 73
- 239000002131 composite material Substances 0.000 description 37
- 230000003287 optical effect Effects 0.000 description 20
- 108010025899 gelatin film Proteins 0.000 description 12
- 238000007598 dipping method Methods 0.000 description 11
- 239000000075 oxide glass Substances 0.000 description 11
- 238000004040 coloring Methods 0.000 description 10
- 230000003247 decreasing effect Effects 0.000 description 10
- 238000005562 fading Methods 0.000 description 10
- 238000011282 treatment Methods 0.000 description 10
- YQMWDQQWGKVOSQ-UHFFFAOYSA-N trinitrooxystannyl nitrate Chemical compound [Sn+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YQMWDQQWGKVOSQ-UHFFFAOYSA-N 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- 229910052718 tin Inorganic materials 0.000 description 9
- 239000002159 nanocrystal Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002090 nanochannel Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
Description
技术领域technical field
本发明属于无机功能材料技术领域,具体涉及一种纳米晶增强氧化钨电致变色薄膜;本发明还涉及该纳米晶增强氧化钨电致变色薄膜的制备方法。The invention belongs to the technical field of inorganic functional materials, and in particular relates to a nanocrystal-reinforced tungsten oxide electrochromic film; the invention also relates to a preparation method of the nanocrystal-reinforced tungsten oxide electrochromic film.
背景技术Background technique
氧化钨电致变色薄膜因具有可实时调节室内采光及保温隔热作用而在建筑节能玻璃领域拥有巨大的应用价值,被认为是替代Low-e镀膜玻璃的下一代节能窗材料。Tungsten oxide electrochromic film has great application value in the field of building energy-saving glass because of its real-time adjustment of indoor lighting and thermal insulation. It is considered to be the next-generation energy-saving window material to replace Low-e coated glass.
氧化钨系电致变色玻璃窗主要由透明电极、氧化钨电致变色薄膜、锂离子电解液、离子存储薄膜、透明电极等五层组成,外加一低压电源提供驱动电压,实现该夹层结构的电致变色;而现有氧化钨系电致变色玻璃窗存在循环寿命不长、大尺寸玻璃电致变色响应速率慢以及缺乏近红外调制能力的缺点,影响了该材料在建筑节能玻璃领域的广泛使用。影响该窗电致变色性能的关键材料是氧化钨电致变色薄膜,因此,如何制备出电致变色材料循环寿命长、大尺寸材料变色响应速率快同时具备近红外调制能力的氧化钨电致变色薄膜,是亟需解决的问题。The tungsten oxide electrochromic glass window is mainly composed of transparent electrodes, tungsten oxide electrochromic film, lithium ion electrolyte, ion storage film, transparent electrode and other five layers, plus a low-voltage power supply to provide driving voltage to realize the electric However, the existing tungsten oxide-based electrochromic glass windows have the shortcomings of short cycle life, slow electrochromic response rate of large-sized glass, and lack of near-infrared modulation ability, which affects the wide use of this material in the field of energy-saving building glass. . The key material that affects the electrochromic performance of this window is tungsten oxide electrochromic thin film. Therefore, how to prepare tungsten oxide electrochromic with long cycle life of electrochromic materials, fast color change response rate of large-sized materials and near-infrared modulation ability Thin film is a problem that needs to be solved urgently.
发明内容Contents of the invention
本发明的目的是提供一种纳米晶增强氧化钨电致变色薄膜,解决现有氧化钨系电致变色材料循环寿命短、大尺寸材料变色响应速率慢及缺乏近红外调制能力的问题。The purpose of the present invention is to provide a nanocrystalline enhanced tungsten oxide electrochromic film to solve the problems of short cycle life of existing tungsten oxide-based electrochromic materials, slow discoloration response rate of large-sized materials and lack of near-infrared modulation ability.
本发明的另一目的是提供该纳米晶增强氧化钨电致变色薄膜的制备方法,制备工艺简便。Another object of the present invention is to provide a method for preparing the nanocrystal-reinforced tungsten oxide electrochromic film, and the preparation process is simple and convenient.
本发明所采用的技术方案是,一种纳米晶增强氧化钨电致变色薄膜,是以非晶态的氧化钨为基质,将纳米晶态透明导电氧化物(TCO)嵌入到基质中,制备的“TCO纳米晶-WO3非晶”双相复合薄膜。The technical solution adopted in the present invention is that a nanocrystalline enhanced tungsten oxide electrochromic film is prepared by embedding nanocrystalline transparent conductive oxide (TCO) into the substrate with amorphous tungsten oxide as the substrate. "TCO nanocrystalline-WO 3 amorphous" dual-phase composite film.
本发明的特征还在于,The present invention is also characterized in that,
纳米晶态TCO是重掺杂半导体,为掺锡的氧化铟(ITO)、掺锑的氧化锡(ATO)或掺铝的氧化锌(AZO)中的任意一种。Nanocrystalline TCO is a heavily doped semiconductor, which is any one of tin-doped indium oxide (ITO), antimony-doped tin oxide (ATO) or aluminum-doped zinc oxide (AZO).
纳米晶态TCO的粒径为5~20nm,载流子浓度为1018~1021个/cm3。The particle size of the nanocrystalline TCO is 5-20nm, and the carrier concentration is 10 18 -10 21 /cm 3 .
本发明所采用的另一技术方案是,一种纳米晶增强氧化钨电致变色薄膜的制备方法,具体步骤如下:Another technical solution adopted in the present invention is a method for preparing a nanocrystalline enhanced tungsten oxide electrochromic film, the specific steps are as follows:
步骤1,将氯化钨和TCO用金属硝酸盐混合后,溶于有机溶剂中,得混合溶液;向其中加入去离子水,在常温下搅拌2h,充分溶解后,得复合溶胶;Step 1, after mixing tungsten chloride and TCO with metal nitrate, dissolve it in an organic solvent to obtain a mixed solution; add deionized water to it, stir at room temperature for 2 hours, and obtain a composite sol after fully dissolving;
步骤2,采用浸渍提拉或旋涂技术,将步骤1所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜;Step 2, uniformly coating the composite sol obtained in step 1 on a transparent conductive oxide glass substrate by dipping or spin coating technology to form a gel film;
步骤3,将步骤2所得凝胶膜置于150℃环境中10min后,放入热处理炉中于200~300℃的氧气气氛下保温1小时,随后将其取出,空冷至室温,即得电致变色薄膜。Step 3: Place the gel film obtained in Step 2 in an environment of 150°C for 10 minutes, then put it into a heat treatment furnace and keep it in an oxygen atmosphere at 200-300°C for 1 hour, then take it out, and air-cool it to room temperature to obtain the electro-induced Color changing film.
本发明的特征还在于,The present invention is also characterized in that,
步骤1中,TCO用金属硝酸盐,为硝酸锡和硝酸铟的混合物;或硝酸锡和三氯化锑的混合物;或硝酸锌和硝酸铝的混合物。In step 1, the metal nitrate used for TCO is a mixture of tin nitrate and indium nitrate; or a mixture of tin nitrate and antimony trichloride; or a mixture of zinc nitrate and aluminum nitrate.
步骤1中,硝酸锡、硝酸铟与氯化钨的摩尔比为0.1:1:5~20;或三氯化锑、硝酸锡和氯化钨的摩尔比为0.04:1:10~100;或硝酸铝:硝酸锌:氯化钨的摩尔比为0.06:1:5~20。In step 1, the molar ratio of tin nitrate, indium nitrate and tungsten chloride is 0.1:1:5-20; or the molar ratio of antimony trichloride, tin nitrate and tungsten chloride is 0.04:1:10-100; or The molar ratio of aluminum nitrate: zinc nitrate: tungsten chloride is 0.06:1:5-20.
步骤1中,有机溶剂为甲醇、乙醇和乙二醇甲醚中的一种或任意几种以任意比例所得的混合物,所得混合溶液中氯化钨的摩尔浓度为0.05~0.15mol/L。In step 1, the organic solvent is one of methanol, ethanol and ethylene glycol methyl ether or a mixture of any several obtained in arbitrary proportions, and the molar concentration of tungsten chloride in the obtained mixed solution is 0.05-0.15 mol/L.
步骤1中,去离子水与有机溶剂的体积比为1:100。In step 1, the volume ratio of deionized water to organic solvent is 1:100.
本发明的有益效果是,采用纳米晶增强技术,提高了传统氧化钨薄膜在可见光波段的电致变色性能,同时利用TCO纳米晶在近红外波段的调制特性,实现了氧化钨薄膜在近红外波段的调制,解决了现有技术中氧化钨薄膜循环寿命不够长、大尺寸材料电致变色响应速率慢及缺乏近红外调制能力的问题。The beneficial effect of the present invention is that the electrochromic performance of the traditional tungsten oxide film in the visible light band is improved by adopting the nanocrystal enhancement technology, and at the same time, the modulation characteristics of the TCO nanocrystal in the near-infrared band are used to realize the electrochromic performance of the tungsten oxide film in the near-infrared band. The modulation solves the problems in the prior art that the cycle life of the tungsten oxide thin film is not long enough, the electrochromic response rate of large-sized materials is slow, and the lack of near-infrared modulation ability.
附图说明Description of drawings
图1为实施例1所得“ITO纳米晶-WO3非晶”复合薄膜和对比例所得“WO3非晶”膜的着色态与褪色态的透过率曲线;Fig. 1 is the transmittance curve of the colored state and the faded state of the "ITO nanocrystal - WO3 amorphous" composite film obtained in Example 1 and the "WO3 amorphous" film obtained in the comparative example;
图2为实施例1所得“ITO纳米晶-WO3非晶”复合薄膜和对比例所得“WO3非晶”膜的电致变色响应时间。Fig. 2 is the electrochromic response time of the "ITO nanocrystalline-WO 3 amorphous" composite film obtained in Example 1 and the "WO 3 amorphous" film obtained in the comparative example.
具体实施方式detailed description
下面结合附图和具体实施方式对本发明进行详细说明。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
实施例1Example 1
制备“ITO纳米晶-WO3非晶”电致变色薄膜:Preparation of "ITO nanocrystalline-WO 3 amorphous" electrochromic film:
取0.9914g氯化钨、0.0477g硝酸铟、0.0046g的硝酸锡,溶于49.5mL甲醇中,向其中加入0.5mL去离子水,在常温下搅拌2小时充分溶解后,得含钨、铟、锡的复合溶胶;采用浸渍提拉或旋涂技术,将所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜,在150℃温度下干燥10min后,放入热处理炉中于200~300℃的氧气气氛下保温1h,随后将其取出,空冷至室温得到“ITO纳米晶-WO3非晶”双相复合薄膜。Take 0.9914g of tungsten chloride, 0.0477g of indium nitrate, and 0.0046g of tin nitrate, dissolve them in 49.5mL of methanol, add 0.5mL of deionized water to it, and stir at room temperature for 2 hours to fully dissolve, and then obtain tungsten, indium, The composite sol of tin; the obtained composite sol is uniformly coated on the transparent conductive oxide glass substrate by dipping or spin-coating technology to form a gel film, dried at 150°C for 10 minutes, and then placed in a heat treatment furnace 200-300°C in an oxygen atmosphere for 1 hour, then take it out, and air-cool to room temperature to obtain the "ITO nanocrystal-WO 3 amorphous" dual-phase composite film.
本实施例所得薄膜的着色态与褪色态的透过率曲线如图1所示,在可见光波段的光学调制对比度△T%为70%;1200nm波段处的光学调制对比度△T%为50%;100×100mm2薄膜变色响应时间1s,本实施例所得薄膜的电致变色响应时间图见图2;着褪色处理2000次后,薄膜电荷存储量下降仅3%。The transmittance curves of the colored state and the faded state of the film obtained in this embodiment are shown in Figure 1, the optical modulation contrast ΔT% in the visible light band is 70%; the optical modulation contrast ΔT% at the 1200nm wavelength band is 50%; 100×100mm 2 film color change response time 1s, the electrochromic response time chart of the film obtained in this example is shown in Figure 2; after 2000 coloring and fading treatments, the charge storage capacity of the film decreased only by 3%.
实施例2Example 2
制备“ITO纳米晶-WO3非晶”电致变色薄膜:Preparation of "ITO nanocrystalline-WO 3 amorphous" electrochromic film:
取3g氯化钨、0.5777g硝酸铟、0.055g的硝酸锡,溶于49.5mL乙醇中,向其中加入0.5mL去离子水,在常温下搅拌2小时充分溶解后,得含钨、铟、锡的复合溶胶;采用浸渍提拉或旋涂技术,将所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜,在150℃温度下干燥10min后,放入热处理炉中于200~300℃的氧气气氛下保温1h,随后将其取出,空冷至室温得到“ITO纳米晶-WO3非晶”双相复合薄膜。Take 3g of tungsten chloride, 0.5777g of indium nitrate, and 0.055g of tin nitrate, dissolve them in 49.5mL of ethanol, add 0.5mL of deionized water to it, and stir at room temperature for 2 hours to dissolve fully, and then get tungsten, indium, and tin The composite sol of the composite sol; the obtained composite sol is evenly coated on the transparent conductive oxide glass substrate by dipping or spin-coating technology to form a gel film. It was kept in an oxygen atmosphere at ~300°C for 1 hour, then it was taken out, and air-cooled to room temperature to obtain an "ITO nanocrystalline-WO 3 amorphous" dual-phase composite film.
本实施例所得薄膜,在可见光波段的光学调制对比度△T%为65%;1200nm波段处的光学调制对比度△T%为53%;100×100mm2薄膜变色响应时间1s,着褪色处理2000次后,薄膜电荷存储量下降仅2%。The film obtained in this example has an optical modulation contrast ΔT% in the visible light band of 65%; an optical modulation contrast ΔT% in the 1200nm wavelength band is 53% ; the color change response time of the 100×100mm film is 1s, after 2000 coloring and fading treatments , the charge storage capacity of the film decreased by only 2%.
实施例3Example 3
制备“ITO纳米晶-WO3非晶”电致变色薄膜:Preparation of "ITO nanocrystalline-WO 3 amorphous" electrochromic film:
取2g氯化钨、0.1527g硝酸铟、0.0147g的硝酸锡,溶于49.5mL乙二醇甲醚中,向其中加入0.5mL去离子水,在常温下搅拌2小时充分溶解后,得含钨、铟、锡的复合溶胶;采用浸渍提拉或旋涂技术,将所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜,在150℃温度下干燥10min后,放入热处理炉中于200~300℃的氧气气氛下保温1h,随后将其取出,空冷至室温得到“ITO纳米晶-WO3非晶”双相复合薄膜。Take 2g of tungsten chloride, 0.1527g of indium nitrate, and 0.0147g of tin nitrate, and dissolve them in 49.5mL of ethylene glycol methyl ether, add 0.5mL of deionized water to it, and stir at room temperature for 2 hours to fully dissolve to obtain tungsten-containing , indium, and tin composite sol; the resulting composite sol is uniformly coated on a transparent conductive oxide glass substrate by dipping or spin coating technology to form a gel film, dried at 150°C for 10 minutes, and then placed in a heat treatment The furnace was kept in an oxygen atmosphere at 200-300°C for 1 hour, then it was taken out, and air-cooled to room temperature to obtain a dual-phase composite film of "ITO nanocrystal-WO 3 amorphous".
本实施例所得薄膜,在可见光波段的光学调制对比度△T%为72%,1200nm波段处的光学调制对比度△T%为55%,100×100mm2薄膜变色响应时间1s,着褪色处理2000次后,薄膜电荷存储量下降仅2%。The film obtained in this example has an optical modulation contrast ΔT% in the visible light band of 72%, an optical modulation contrast ΔT% in the 1200nm wavelength band of 55%, and a 100× 100mm2 film with a color change response time of 1 second. After 2000 coloring and fading treatments , the charge storage capacity of the film decreased by only 2%.
实施例4Example 4
制备“ATO纳米晶-WO3非晶”电致变色薄膜:Preparation of "ATO nanocrystalline-WO 3 amorphous" electrochromic film:
取300g氯化钨、2.787g硝酸锡、0.0693g的三氯化锑,溶于500mL甲醇、513mL乙醇的混合溶液中,向其中加入10mL去离子水,在常温下搅拌2小时充分溶解后,得含钨、铟、锡的复合溶胶;采用浸渍提拉或旋涂技术,将所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜,在150℃温度下干燥10min后,放入热处理炉中于200~300℃的氧气气氛下保温1h,随后将其取出,空冷至室温得到“ATO纳米晶-WO3非晶”双相复合薄膜。Take 300g of tungsten chloride, 2.787g of tin nitrate, and 0.0693g of antimony trichloride, dissolve them in a mixed solution of 500mL of methanol and 513mL of ethanol, add 10mL of deionized water therein, and stir at room temperature for 2 hours after fully dissolving to obtain A composite sol containing tungsten, indium, and tin; using dipping or spin-coating techniques, the resulting composite sol is uniformly coated on a transparent conductive oxide glass substrate to form a gel film, dried at 150°C for 10 minutes, and placed Put it into a heat treatment furnace and keep it in an oxygen atmosphere at 200-300°C for 1h, then take it out, and cool it to room temperature in air to obtain the "ATO nanocrystalline-WO 3 amorphous" dual-phase composite film.
本实施例所得薄膜,在可见光波段的光学调制对比度△T%为63%,1200nm波段处的光学调制对比度△T%为50%,100×100mm2薄膜变色响应时间1s,着褪色处理2000次后,薄膜电荷存储量下降仅4%。The film obtained in this example has an optical modulation contrast ΔT% in the visible light band of 63%, an optical modulation contrast ΔT% in the 1200nm wavelength band of 50%, and a 100×100mm film with a color change response time of 1 second . After 2000 coloring and fading treatments , the charge storage capacity of the film decreased by only 4%.
实施例5Example 5
制备“ATO纳米晶-WO3非晶”电致变色薄膜:Preparation of "ATO nanocrystalline-WO 3 amorphous" electrochromic film:
取10g氯化钨、0.929g硝酸锡、0.0231g的三氯化锑,溶于400mL的甲醇和107mL的乙二醇甲醚混合溶液中,向其中加入5mL去离子水,在常温下搅拌2小时充分溶解后,得含钨、铟、锡的复合溶胶;采用浸渍提拉或旋涂技术,将所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜,在150℃温度下干燥10min后,放入热处理炉中于200~300℃的氧气气氛下保温1h,随后将其取出,空冷至室温得到“ATO纳米晶-WO3非晶”双相复合薄膜。Take 10g of tungsten chloride, 0.929g of tin nitrate, and 0.0231g of antimony trichloride, dissolve them in a mixed solution of 400mL of methanol and 107mL of ethylene glycol methyl ether, add 5mL of deionized water to it, and stir at room temperature for 2 hours After fully dissolving, a composite sol containing tungsten, indium, and tin is obtained; the obtained composite sol is evenly coated on a transparent conductive oxide glass substrate by dipping or spin-coating technology to form a gel film. After drying for 10 minutes, put it into a heat treatment furnace and keep it in an oxygen atmosphere at 200-300°C for 1 hour, then take it out, and air-cool it to room temperature to obtain the "ATO nanocrystalline-WO 3 amorphous" dual-phase composite film.
本实施例所得薄膜,在可见光波段的光学调制对比度△T%为65%,1200nm波段处的光学调制对比度△T%为48%,100×100mm2薄膜变色响应时间1s,着褪色处理2000次后,薄膜电荷存储量下降仅3%。The film obtained in this example has an optical modulation contrast △T% in the visible light band of 65%, an optical modulation contrast ΔT% in the 1200nm band of 48%, and a 100×100mm film with a color change response time of 1 second . After 2000 coloring and fading treatments , the charge storage capacity of the film decreased by only 3%.
实施例6Example 6
制备“ATO纳米晶-WO3非晶”电致变色薄膜:Preparation of "ATO nanocrystalline-WO 3 amorphous" electrochromic film:
取12g氯化钨、0.929g硝酸锡、0.0231g的三氯化锑,溶于150mL甲醇、50mL乙醇、53mL乙二醇甲醚的混合溶液中,向其中加入2.5mL去离子水,在常温下搅拌2小时充分溶解后,得含钨、铟、锡的复合溶胶;采用浸渍提拉或旋涂技术,将所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜,在150℃温度下干燥10min后,放入热处理炉中于200~300℃的氧气气氛下保温1h,随后将其取出,空冷至室温得到“ATO纳米晶-WO3非晶”双相复合薄膜。Take 12g of tungsten chloride, 0.929g of tin nitrate, and 0.0231g of antimony trichloride, and dissolve them in a mixed solution of 150mL of methanol, 50mL of ethanol, and 53mL of ethylene glycol methyl ether, and add 2.5mL of deionized water to it, and at room temperature After stirring for 2 hours to fully dissolve, a composite sol containing tungsten, indium, and tin was obtained; the obtained composite sol was evenly coated on a transparent conductive oxide glass substrate by dipping or spin-coating techniques to form a gel film. After drying at ℃ for 10 minutes, put it into a heat treatment furnace and keep it in an oxygen atmosphere at 200-300 ℃ for 1 hour, then take it out, and air-cool to room temperature to obtain the "ATO nanocrystalline-WO 3 amorphous" dual-phase composite film.
本实施例所得薄膜,在可见光波段的光学调制对比度△T%为70%,1200nm波段处的光学调制对比度△T%为51%,100×100mm2薄膜变色响应时间1s,着褪色处理2000次后,薄膜电荷存储量下降仅2%。The film obtained in this example has an optical modulation contrast ΔT% in the visible light band of 70%, an optical modulation contrast ΔT% in the 1200nm wavelength band of 51%, and a 100×100mm film with a color change response time of 1 second . After 2000 coloring and fading treatments , the charge storage capacity of the film decreased by only 2%.
实施例7Example 7
制备“AZO纳米晶-WO3非晶”电致变色薄膜:Preparation of "AZO nanocrystalline-WO 3 amorphous" electrochromic film:
取39.66g氯化钨、1.4875g硝酸锌、0.1125g的硝酸铝,溶于667mL乙醇中,向其中加入6.7mL去离子水,在常温下搅拌2小时充分溶解后,得含钨、铟、锡的复合溶胶;采用浸渍提拉或旋涂技术,将所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜,在150℃温度下干燥10min后,放入热处理炉中于200~300℃的氧气气氛下保温1h,随后将其取出,空冷至室温得到“AZO纳米晶-WO3非晶”双相复合薄膜。Take 39.66g of tungsten chloride, 1.4875g of zinc nitrate, and 0.1125g of aluminum nitrate, dissolve them in 667mL of ethanol, add 6.7mL of deionized water to it, and stir at room temperature for 2 hours to fully dissolve, and then obtain a compound containing tungsten, indium, and tin. The composite sol of the composite sol; the obtained composite sol is evenly coated on the transparent conductive oxide glass substrate by dipping or spin-coating technology to form a gel film. It was kept in an oxygen atmosphere at ~300°C for 1 hour, then it was taken out, and air-cooled to room temperature to obtain an "AZO nanocrystalline-WO 3 amorphous" dual-phase composite film.
本实施例所得薄膜,在可见光波段的光学调制对比度△T%为64%,1200nm波段处的光学调制对比度△T%为45%,100×100mm2薄膜变色响应时间1s,着褪色处理2000次后,薄膜电荷存储量下降仅3%。The film obtained in this example has an optical modulation contrast ΔT% in the visible light band of 64%, an optical modulation contrast ΔT% in the 1200nm wavelength band of 45%, and a 100×100mm film with a color change response time of 1 second . After 2000 coloring and fading treatments , the charge storage capacity of the film decreased by only 3%.
实施例8Example 8
制备“AZO纳米晶-WO3非晶”电致变色薄膜:Preparation of "AZO nanocrystalline-WO 3 amorphous" electrochromic film:
取19.83g氯化钨、2.9749g硝酸锌、0.2251g的硝酸铝,溶于1000mL乙二醇甲醚中,向其中加入10mL去离子水,在常温下搅拌2小时充分溶解后,得含钨、铟、锡的复合溶胶;采用浸渍提拉或旋涂技术,将所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜,在150℃温度下干燥10min后,放入热处理炉中于200~300℃的氧气气氛下保温1h,随后将其取出,空冷至室温得到“AZO纳米晶-WO3非晶”双相复合薄膜。Take 19.83g of tungsten chloride, 2.9749g of zinc nitrate, and 0.2251g of aluminum nitrate, dissolve them in 1000mL of ethylene glycol methyl ether, add 10mL of deionized water to it, and stir at room temperature for 2 hours to fully dissolve, and obtain tungsten, Composite sol of indium and tin; apply the obtained composite sol evenly on the transparent conductive oxide glass substrate by dipping or spin coating technology to form a gel film, dry it at 150°C for 10 minutes, and put it into a heat treatment furnace in an oxygen atmosphere at 200-300° C. for 1 h, then take it out, and cool it to room temperature in air to obtain the “AZO nanocrystal-WO 3 amorphous” dual-phase composite film.
本实施例所得薄膜,在可见光波段的光学调制对比度△T%为72%,1200nm波段处的光学调制对比度△T%为56%,100×100mm2薄膜变色响应时间1s,着褪色处理2000次后,薄膜电荷存储量下降仅4%。The film obtained in this example has an optical modulation contrast ΔT% in the visible light band of 72%, an optical modulation contrast ΔT% in the 1200nm wavelength band of 56%, and a 100×100mm film with a color change response time of 1 second . After 2000 coloring and fading treatments , the charge storage capacity of the film decreased by only 4%.
实施例9Example 9
制备“AZO纳米晶-WO3非晶”电致变色薄膜:Preparation of "AZO nanocrystalline-WO 3 amorphous" electrochromic film:
取9.91g氯化钨、0.7437g硝酸锌、0.0563g的硝酸铝,溶于250mL甲醇中,向其中加入2.5mL去离子水,在常温下搅拌2小时充分溶解后,得含钨、铟、锡的复合溶胶;采用浸渍提拉或旋涂技术,将所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜,在150℃温度下干燥10min后,放入热处理炉中于200~300℃的氧气气氛下保温1h,随后将其取出,空冷至室温得到“AZO纳米晶-WO3非晶”双相复合薄膜。Take 9.91g of tungsten chloride, 0.7437g of zinc nitrate, and 0.0563g of aluminum nitrate, dissolve them in 250mL of methanol, add 2.5mL of deionized water to it, and stir at room temperature for 2 hours to fully dissolve, and then obtain tungsten, indium, and tin. The composite sol of the composite sol; the obtained composite sol is evenly coated on the transparent conductive oxide glass substrate by dipping or spin-coating technology to form a gel film. It was kept in an oxygen atmosphere at ~300°C for 1 hour, then it was taken out, and air-cooled to room temperature to obtain an "AZO nanocrystalline-WO 3 amorphous" dual-phase composite film.
本实施例所得薄膜,在可见光波段的光学调制对比度△T%为74%,1200nm波段处的光学调制对比度△T%为50%,100×100mm2薄膜变色响应时间1s,着褪色处理2000次后,薄膜电荷存储量下降仅3%。The film obtained in this example has an optical modulation contrast ΔT% in the visible light band of 74%, an optical modulation contrast ΔT% in the 1200nm wavelength band of 50%, and a 100×100mm film with a color change response time of 1 second . After 2000 coloring and fading treatments , the charge storage capacity of the film decreased by only 3%.
对比例comparative example
制备非晶WO3电致变色薄膜:Preparation of amorphous WO 3 electrochromic film:
取0.9914g氯化钨,溶于50mL甲醇中,在常温下搅拌2小时充分溶解,得氧化钨前驱溶胶;采用浸渍提拉或旋涂技术,将所得复合溶胶均匀涂敷于透明导电氧化物玻璃基板上,形成凝胶膜,在150℃温度下干燥10min后,放入热处理炉中于200~300℃的氧气气氛下保温1h,随后将其取出,空冷至室温得到非晶WO3薄膜。Take 0.9914g of tungsten chloride, dissolve it in 50mL of methanol, stir it at room temperature for 2 hours to fully dissolve, and obtain the tungsten oxide precursor sol; adopt the dipping and pulling or spin coating technology, and evenly coat the obtained composite sol on the transparent conductive oxide glass Form a gel film on the substrate, dry it at 150°C for 10 minutes, put it into a heat treatment furnace and keep it in an oxygen atmosphere at 200-300°C for 1 hour, then take it out, and air cool it to room temperature to obtain an amorphous WO 3 film.
本实施例所得对比薄膜的着色态与褪色态的透过率曲线如图1所示,在可见光波段的光学调制对比度△T%为40%;1200nm波段处的光学调制对比度△T%为3%;100×100mm2薄膜变色响应时间6s,本实施例所得薄膜的电致变色响应时间图见图2;着褪色处理2000次后,薄膜电荷存储量下降60%。The transmittance curves of the colored state and the faded state of the comparison film obtained in this example are shown in Figure 1, and the optical modulation contrast ΔT% in the visible light band is 40%; the optical modulation contrast ΔT% in the 1200nm wave band is 3% 100 × 100mm 2 film color change response time 6s, the electrochromic response time chart of the film obtained in this embodiment is shown in Figure 2; after 2000 times of coloring and fading treatment, the charge storage capacity of the film decreased by 60%.
本发明将氧化钨薄膜制备成非晶薄膜,由于非晶材料的微观组织结构是短程无序的,因此在非晶氧化钨中容易产生有利于锂离子进出的纳米通道,而在非晶的氧化钨基体中掺入TCO纳米晶,会增加材料内部的无序结构,产生更多的纳米级通道,此外,TCO纳米晶自身具有近红外电致变色特性,将TCO纳米晶掺入氧化钨非晶材料中,形成“TCO纳米晶-WO3非晶”复合薄膜,不仅可提高氧化钨薄膜可见光谱调制能力、延长使用寿命,而且还能提高其在近红外波段的调制能力,使氧化钨系电致变色玻璃光谱调谐性更高、隔热性能更好。In the present invention, the tungsten oxide film is prepared as an amorphous film. Since the microstructure of the amorphous material is short-range disordered, it is easy to generate nano-channels in the amorphous tungsten oxide that are conducive to the entry and exit of lithium ions, while in the amorphous tungsten oxide Doping TCO nanocrystals into the tungsten matrix will increase the disordered structure inside the material and generate more nanoscale channels. In addition, TCO nanocrystals have near-infrared electrochromic properties. Doping TCO nanocrystals into tungsten oxide amorphous Among the materials, the formation of "TCO nanocrystalline-WO 3 amorphous" composite film can not only improve the visible spectrum modulation ability of the tungsten oxide film and prolong the service life, but also improve its modulation ability in the near-infrared band, so that the tungsten oxide-based electric Chromogenic glass has higher spectral tuning and better thermal insulation performance.
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