CN105024666A - T type tuning fork wafer and design method thereof - Google Patents
T type tuning fork wafer and design method thereof Download PDFInfo
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- CN105024666A CN105024666A CN201510491614.9A CN201510491614A CN105024666A CN 105024666 A CN105024666 A CN 105024666A CN 201510491614 A CN201510491614 A CN 201510491614A CN 105024666 A CN105024666 A CN 105024666A
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000013461 design Methods 0.000 title claims abstract description 8
- 239000000919 ceramic Substances 0.000 claims abstract description 10
- 239000003292 glue Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 238000002789 length control Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000012545 processing Methods 0.000 abstract description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a T type tuning fork wafer and a design method thereof. The T type tuning fork wafer is characterized in that the external form of the tuning fork wafer is in a T shape; and the longitudinal part of the T shape is a wafer tuning fork arm part; and the horizontal part of the T shape is a wafer terminal part. A dispensing part is formed between the wafer and a ceramic pedestal. The design method comprises: (1), the length A of the wafer tuning fork arm is 2.1 to 2.3mm; (2), the width C of the wafer tuning fork arm is 0.2 to 0.25 mm; and (3), lateral processing is carried out on the terminal part of the tuning fork wafer. The advantages are as follows: a tuning fork wafer that is easy to process can be arranged inside a paster type ceramic pedestal conveniently; and the design and production of the low-cost miniaturization clock device can be realized.
Description
Technical field
What the present invention relates to is that one is applied to a kind of T-shaped tuning fork wafer and method for designing in quartz crystal electronic devices and components Design and manufacture field, belongs to the production technical field that quartz electronic components and parts make.
Background technology
Along with the develop rapidly of electronic information technology, the requirement of frequency element becomes more and more higher now.As the one of frequency element, real-time clock (RTC) device presents miniaturization, lightening development trend, and increasing gradually along with demand, processing cost is also faced with larger challenge.The effect of RTC device to produce sequence circuit reference signal.RTC product category is various, generally can be divided into built-in crystal and two kinds, external crystal according to product structure.The RTC cost of general crystal external structure is lower, but often can run into some problems in the design, as: the crystal product of different manufacturers, different batches is not quite similar on individual parameters; Different RTC chips requires different to the CL value of crystal, improperly will bring very large error as mated, and also can bring the problems such as the slow or starting of oscillation of starting of oscillation is difficult.And crystal embedding structure does not just have the problem of above-mentioned external structure, and be provided with product can the advantage of miniaturized and high reliability, raising production quality and efficiency; Ensure the consistency of clock accuracy; Realize the advantages such as the low power consumption characteristic of product.
The real-time clock of crystal embedding structure is exactly our oscillator product, and in oscillator production process, the chip (timing circuit) of tuning fork wafer and RTC module is placed in same encapsulation by we, and this just constitutes a RTC oscillator product.
Traditional tuning fork wafer is a strip type wafer, is applicable to the serial direct insertion columnar crystal oscillator such as 1x5,2x6,3x8.Along with popularizing of the SMD miniaturized products such as 3.2x2.5,2.5x2.0, RTC product is also developing towards SMD miniaturization, and this just requires that tuning fork wafer diminishes dimensionally.In tuning fork wafer process technique, wafer length direction shortens, the width of tuning fork wafer certainly will be made and then to attenuate, thinner tuning fork wafer becomes and difficult in the precision designed and produce, traditional cutting, grinding technics cannot meet the production of the traditional tuning-fork-type wafer being built in 3225 sized base, need to introduce expensive lithography corrosion process.
Tradition tuning fork wafer part A length range is 2.1-2.3mm, and the length range of part B is 0.9-1.1mm, and the width range of part B is 0.5-0.65mm, C partial width be 0.2-0.25mm, A+B total length scope is 3.0-3.5mm.Namely the overall dimensions of traditional tuning fork wafer is in the scope of 3.0mm × 0.5mm to 3.5mm × 0.65mm.
Summary of the invention
What the present invention proposed is a kind of T-shaped tuning fork wafer and method for designing, its object is to avoid tuning fork wafer attenuate and shorten the length of tuning fork wafer, make wafer be applicable to the product of the small size base of ceramic such as 3225, this tuning fork wafer fabrication method and traditional tuning fork wafer fabrication method different.
Technical solution of the present invention: a kind of T-shaped tuning fork wafer, its structure is that the external form of tuning fork wafer is T-shaped, and T-shaped longitudinal component is wafer prong part, and T-shaped lateral part is wafer terminal part, is a glue part between wafer and base of ceramic.
Method for designing, comprises following design procedure:
(1) the length A of wafer prong is 2.1-2.3mm,
(2) width C of wafer prong is 0.2-0.25mm,
(3) transverse directionization process is carried out in the terminal part of tuning fork wafer: 1) the prong part of tuning fork wafer is wafer reality of work live part, the effect of connecting wafer and base of ceramic is only played in terminal part, and the shape therefore changing terminal part within the specific limits does not affect the operating characteristic of wafer; 2) length of tuning fork wafer terminal part B reduced, width elongates, and the lateral separation of tuning fork wafer terminal part is broadened;
(4) reduce the length of wafer terminal length B, thus reduce tuning fork wafer overall length, namely wafer terminal length B is reduced to 0.2-0.3mm, and the width of wafer terminal is increased to 1.3-1.5mm;
(5) A+B total length controls at 2.3-2.6mm, and overall dimensions is at 2.3mm × 1.3mm-2.6mm × 1.5mm.
Advantage of the present invention: based on the above-mentioned deficiency of traditional tuning fork wafer, we are constant in conventional wafer prong length, under the prerequisite that wafer prong width is constant, by wafer terminal contraction in length, wafer terminal width is widened, and makes all to be applicable to the small size base of ceramic products such as 3225 in length and width.Meet the requirement of the SMD miniaturization of RTC product, also ensure that reliability and the accuracy of RTC product simultaneously, more do not need to introduce expensive lithography corrosion process.
Accompanying drawing explanation
Fig. 1 is traditional tuning fork wafer schematic diagram;
Fig. 2 is T-shaped tuning fork wafer schematic diagram;
In figure, A is wafer prong length, and C is wafer prong width, and B is wafer terminal length, and D part is wafer point glue part.
Embodiment
Contrast accompanying drawing 2, T-shaped tuning fork wafer, its external form is T-shaped shape, and T-shaped longitudinal component is wafer prong part, and T-shaped lateral part is wafer terminal part, and wherein D is the some glue part between wafer and base of ceramic.
Its method for designing, T-shaped tuning fork wafer prong part is constant, namely wafer prong length 2.1-2.3mm is constant, 0.2-0.25mm is constant for wafer prong width, transverse direction process is carried out in the terminal part of tuning fork wafer, reduce the length of wafer terminal length B, thus reduce tuning fork wafer overall length, namely wafer terminal length B is reduced to 0.2-0.3mm, the width range of wafer terminal is increased to 1.3-1.5mm, A+B total length controls at 2.3-2.6mm, and overall dimensions is at 2.3mm × 1.3mm-2.6mm × 1.5mm.
The external form of T-shaped tuning fork wafer is T-shaped shape, is convenient to the wafer process of SMD miniaturized products.
Show that the T-shaped tuning fork wafer adequate space made full use of 3225 base of ceramic width of the present invention realizes not reducing wafer prong width C and the total length A+B simultaneously reducing tuning fork wafer from above-mentioned.
Claims (2)
1. a T-shaped tuning fork wafer, is characterized in that the external form of tuning fork wafer is T-shaped, and T-shaped longitudinal component is wafer prong part, and T-shaped lateral part is wafer terminal part, is a glue part between wafer and base of ceramic.
2. the method for designing of T-shaped tuning fork wafer as claimed in claim 1, is characterized in that comprising following design procedure:
(1) the length A of wafer prong is 2.1-2.3mm,
(2) width C of wafer prong is 0.2-0.25mm,
(3) transverse directionization process is carried out in the terminal part of tuning fork wafer: 1) the prong part of tuning fork wafer is wafer reality of work live part, the effect of connecting wafer and base of ceramic is only played in terminal part, and the shape therefore changing terminal part within the specific limits does not affect the operating characteristic of wafer; 2) length of tuning fork wafer terminal part B reduced, width elongates, and the lateral separation of tuning fork wafer terminal part is broadened;
(4) reduce the length of wafer terminal length B, thus reduce tuning fork wafer overall length, namely wafer terminal length B is reduced to 0.2-0.3mm, and the width of wafer terminal is increased to 1.3-1.5mm;
(5) A+B total length controls at 2.3-2.6mm, and overall dimensions is at 2.3mm × 1.3mm-2.6mm × 1.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510491614.9A CN105024666A (en) | 2015-08-12 | 2015-08-12 | T type tuning fork wafer and design method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510491614.9A CN105024666A (en) | 2015-08-12 | 2015-08-12 | T type tuning fork wafer and design method thereof |
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| CN105024666A true CN105024666A (en) | 2015-11-04 |
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| CN201510491614.9A Pending CN105024666A (en) | 2015-08-12 | 2015-08-12 | T type tuning fork wafer and design method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425790A (en) * | 2003-05-16 | 2009-05-06 | 精工爱普生株式会社 | Tuning-fork-type piezoelectric resonator element and tuning-fork-type piezoelectric vibrator |
| JP4329286B2 (en) * | 2001-08-27 | 2009-09-09 | セイコーエプソン株式会社 | Vibrating piece, vibrator, oscillator and electronic device |
| CN101878590A (en) * | 2008-09-26 | 2010-11-03 | 株式会社大真空 | Tuning fork type piezoelectric vibrating piece and tuning fork type piezoelectric vibrating device |
| JP2011151562A (en) * | 2010-01-21 | 2011-08-04 | Kyocera Kinseki Corp | Tuning fork type bent crystal vibration element |
| US9455683B2 (en) * | 2013-08-29 | 2016-09-27 | Samsung Electro-Mechanics Co., Ltd. | Piezoelectric piece for piezoelectric vibrator and manufacturing method thereof |
-
2015
- 2015-08-12 CN CN201510491614.9A patent/CN105024666A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4329286B2 (en) * | 2001-08-27 | 2009-09-09 | セイコーエプソン株式会社 | Vibrating piece, vibrator, oscillator and electronic device |
| CN101425790A (en) * | 2003-05-16 | 2009-05-06 | 精工爱普生株式会社 | Tuning-fork-type piezoelectric resonator element and tuning-fork-type piezoelectric vibrator |
| CN101878590A (en) * | 2008-09-26 | 2010-11-03 | 株式会社大真空 | Tuning fork type piezoelectric vibrating piece and tuning fork type piezoelectric vibrating device |
| JP2011151562A (en) * | 2010-01-21 | 2011-08-04 | Kyocera Kinseki Corp | Tuning fork type bent crystal vibration element |
| US9455683B2 (en) * | 2013-08-29 | 2016-09-27 | Samsung Electro-Mechanics Co., Ltd. | Piezoelectric piece for piezoelectric vibrator and manufacturing method thereof |
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Application publication date: 20151104 |
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