CN104992920B - A kind of method for controlling electrostatic chuck suction - Google Patents
A kind of method for controlling electrostatic chuck suction Download PDFInfo
- Publication number
- CN104992920B CN104992920B CN201510277990.8A CN201510277990A CN104992920B CN 104992920 B CN104992920 B CN 104992920B CN 201510277990 A CN201510277990 A CN 201510277990A CN 104992920 B CN104992920 B CN 104992920B
- Authority
- CN
- China
- Prior art keywords
- wafer
- electrostatic chuck
- electrostatic
- deformation
- suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of method for controlling electrostatic chuck suction, and first before wafer process, incipient suction force N0 is set to wafer；Wherein, in the presence of incipient suction force N0, wafer is just adsorbed by electrostatic chuck；Then in technical process, the function f (t) of process time is fitted to the intensity of variation of wafer bow；The electrostatic attraction g (t) that overcomes required for wafer deformation is calculated then according to the modulus of elasticity of wafer material；Electrostatic attraction change function N (t)=N0+g (t) in technical process is finally calculated, so that wafer keeps just being adsorbed by electrostatic chuck in technical process.The present invention can rationally control the electrostatic attraction of the electrostatic chuck in technical process, prevent electrostatic attraction too small and cause film dancing phenomenon, prevent that the excessive frictional force that causes between wafer and electrostatic chuck of electrostatic attraction is excessive simultaneously, ensure product wafer quality, extend the electrostatic chuck life-span.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing equipment field, is related to a kind of method for controlling electrostatic chuck suction.
Background technology
In recent years, as the development of semiconductor fabrication process, plasma-treating technology are widely used in semiconductor element
In the processing procedure of device.Above-mentioned processing procedure, such as deposition, etching technics are usually to be carried out in plasma processing apparatus.It is general next
To say, plasma processing apparatus includes chamber, for providing process gas to the gas spray to chamber from air supply source, with
And the electrostatic chuck (Electrostatic chuck, abbreviation ESC) of fixed support wafer.Wherein electrostatic chuck is generally arranged at
The cavity bottom of plasma processing apparatus, it is connected as bottom electrode with radio frequency power source, and in the gas shower of chamber roof
Head is connected as Top electrode with radio frequency power source or ground.Rf electric field is formed between upper/lower electrode, is made by electronics of electric field acceleration etc.
Ionization, which occurs, for the etching gas molecule with being passed through processing chamber housing collides, and produces and is entered by the plasma that process gas is formed and wafer
Row reaction, to carry out required manufacturing process.
Referring to Fig. 1, Fig. 1 is the structural representation of electrostatic chuck and wafer, including electrostatic chuck 10 and wafer 20.
One group of DC electrode is inlayed in the insulating materials of electrostatic chuck, to be switched to dc source, makes positive and negative electrode respectively
Voltage swing is equal, opposite polarity (such as input 500V voltages, positive electricity pole tension is+250V, and negative electricity pole tension is -250V),
The surface of insulating matter can produce polarization charge, and Surface Polarized Charge can produce electric field, the electric field can further be placed in sucker it
On wafer bottom surface produce polarization charge, be distributed in the electric charge of chip back surface with the charge polarity being distributed in above sucker on the contrary,
So as to hold wafer.It can show that electrostatic attraction is according to Johnsen-Rahbek effects formula：
Wherein：F is electrostatic attraction, and electric capacity of the C between wafer and sucker, voltages of the V between positive and negative electrode, D is wafer
With the spacing of interambulacrum.
Electrostatic chuck uses a fixed suction in technical process at present, and in the kinds of processes step of wafer manufacture
In, due to the continuous change of temperature, pressure, membrane stress in whole technical process, the stress suffered by wafer also can be continuous
Change, at this moment if still maintaining a fixed suction, it will result in wafer bow and change, it is quiet so as to influence whether
The stability of electric suction.
Referring to Fig. 2, Fig. 2 be electrostatic chuck and deformation after wafer structural representation, including electrostatic chuck 10 with
And the wafer 20 after deformation.By taking aluminium film physical gas-phase deposition as an example：Assuming that wafer is flat board before aluminium film deposition, with
The progress of technical process, aluminium film can be such that wafer increasingly bends, if electrostatic attraction is too small, can remain brilliant initial stage in technique
Round absorption, but suction deficiency can then occur to technique latter stage, the back pressure for heat exchange is unable to maintain that, or even cause film dancing；
If electrostatic attraction is excessive, wafer rear and electrostatic chuck surface material friction are caused, damages product wafer quality and electrostatic chuck
Life-span.
Therefore, those skilled in the art, which need badly, provides a kind of method that can rationally control electrostatic chuck suction, to adapt to
Wafer produces the problem of deformation in technical process, prevents that electrostatic attraction is too small and causes film dancing phenomenon, while prevent electrostatic attraction
The excessive frictional force that causes between wafer and electrostatic chuck is excessive, and causes product wafer Quality Down and electrostatic chuck life-span to subtract
It is short.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of method that can rationally control electrostatic chuck suction, with suitable
The problem of wafer produces deformation in technical process is answered, prevents that electrostatic attraction is too small and causes film dancing phenomenon, while prevent electrostatic from inhaling
The frictional force that power is excessive to be caused between wafer and electrostatic chuck is excessive, and causes product wafer Quality Down and electrostatic chuck life-span
Shorten.
In order to solve the above-mentioned technical problem, it is including following the invention provides a kind of method for controlling electrostatic chuck suction
Step：
Step S01, before wafer process, incipient suction force N0 is set to wafer；Wherein, it is brilliant in the presence of incipient suction force N0
Circle is just adsorbed by electrostatic chuck；
Step S02, during wafer process, the function f of process time is fitted to the intensity of variation of wafer bow
(t)；
Step S03, the electrostatic attraction g (t) required for overcoming wafer deformation is calculated according to the modulus of elasticity of wafer material,
Wherein, the g (t) is the function that electrostatic attraction changes with the process time；
Step S04, electrostatic attraction change function N (t)=N0+g (t) in technical process is calculated, so that wafer is in technique
During keep just being adsorbed by electrostatic chuck.
Preferably, in step S03, electrostatic attraction g (t) direction and the side of wafer deformation required for wafer deformation are overcome
To opposite.
Preferably, the cross section after the wafer deformation is arc.
Preferably, the intermediate region of the cross section after the wafer deformation is protruded to the direction away from electrostatic chuck.
Preferably, one group of DC electrode is inlayed in the insulating materials of the electrostatic chuck.
Preferably, the DC electrode includes positive electricity level and negative electrode.
Compared with currently existing scheme, the method for control electrostatic chuck suction provided by the invention, solves existing process mistake
Cheng Zhong, the problem of electrostatic chuck electrostatic attraction is unstable, the electrostatic attraction of the electrostatic chuck in technical process can be rationally controlled,
Prevent electrostatic attraction too small and cause film dancing phenomenon, while prevent electrostatic attraction is excessive from causing rubbing between wafer and electrostatic chuck
It is excessive to wipe power, in technical process, wafer can be kept just to be adsorbed by electrostatic chuck, ensures product wafer quality, extends
The electrostatic chuck life-span.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, it will use below required in embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, on the premise of not paying creative work, it can also be obtained according to these accompanying drawings other attached
Figure.
Fig. 1 is the structural representation of electrostatic chuck and wafer in the prior art；
Fig. 2 be in the prior art electrostatic chuck and deformation after wafer structural representation；
Fig. 3 is the schematic flow sheet of the method for present invention control electrostatic chuck suction；
Fig. 4 to Fig. 6 is the structural representation of the method preferred embodiment of present invention control electrostatic chuck suction.
Label is described as follows in figure：
10th, electrostatic chuck；20th, wafer.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with implementation of the accompanying drawing to the present invention
Mode is described in further detail.Those skilled in the art can understand the present invention easily as the content disclosed by this specification
Other advantages and effect.The present invention can also be embodied or applied by other different embodiments, this explanation
Every details in book can also be based on different viewpoints and application, without departing from the spirit of the present invention carry out various modifications or
Change.
Above and other technical characteristic and beneficial effect, by conjunction with the embodiments and 3 to 6 pairs of accompanying drawing control electrostatic of the invention
The schematic flow sheet for the method that Fig. 3 is present invention control electrostatic chuck suction is described in detail in the method for force of suction cup；Fig. 4 is extremely
Fig. 6 is the structural representation of the method preferred embodiment of present invention control electrostatic chuck suction.
As shown in figure 3, the invention provides a kind of method for controlling electrostatic chuck suction, comprise the following steps：
Step S01, before the technique of wafer 20, incipient suction force N0 is set to wafer 20；Wherein, in incipient suction force N0 effect
Under, wafer 20 is just adsorbed by electrostatic chuck and (is referred to Fig. 4).One is inlayed in the insulating materials of electrostatic chuck in the present embodiment
Group DC electrode, DC electrode include positive electricity level and negative electrode.
Step S02, in the technical process of wafer 20, the function of process time is fitted to the intensity of variation of the flexibility of wafer 20
F (t) (refers to Fig. 5).Because wafer 20 can produce deformation, in general, the cross section after the deformation of wafer 20 in technical process
For arc, i.e. the intermediate region of cross section after the deformation of wafer 20 is protruded to the direction away from electrostatic chuck.
Step S03, the electrostatic attraction g required for overcoming the deformation of wafer 20 is calculated according to the modulus of elasticity of the material of wafer 20
(t), wherein, the g (t) is the function (referring to Fig. 6) that electrostatic attraction changes with the process time, is overcome needed for the deformation of wafer 20
The electrostatic attraction g (t) wanted direction is in opposite direction with the deformation of wafer 20.
Step S04, electrostatic attraction change function N (t)=N0+g (t) in technical process is calculated, so that wafer 20 is in work
Keep just being adsorbed by electrostatic chuck during skill, wherein, the incipient suction force N0 and overcome the deformation institute of wafer 20 that wafer 20 is set
The electrostatic attraction g (t) needed direction is consistent.
In summary, the method for control electrostatic chuck suction provided by the invention, during solving existing process, electrostatic
The problem of sucker electrostatic attraction is unstable, the electrostatic attraction of the electrostatic chuck in technical process can be rationally controlled, prevents electrostatic
Suction is too small and causes film dancing phenomenon, while prevents the excessive frictional force mistake caused between wafer and electrostatic chuck of electrostatic attraction
Greatly, in technical process, wafer can be kept just to be adsorbed by electrostatic chuck, ensures product wafer quality, extended electrostatic and inhale
The disk life-span.
Some preferred embodiments of the present invention have shown and described in described above, but as previously described, it should be understood that the present invention
Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations,
Modification and environment, and above-mentioned teaching or the technology or knowledge of association area can be passed through in the scope of the invention is set forth herein
It is modified., then all should be in this hair and the change and change that those skilled in the art are carried out do not depart from the spirit and scope of the present invention
In the protection domain of bright appended claims.
Claims (6)
- A kind of 1. method for controlling electrostatic chuck suction, it is characterised in that comprise the following steps：Step S01, before wafer process, incipient suction force N0 is set to wafer；Wherein, in the presence of incipient suction force N0, wafer is firm It is good to be adsorbed by electrostatic chuck, wherein, wafer and electrostatic chuck completely attach to；Step S02, during wafer process, the function f (t) of process time is fitted to the intensity of variation of wafer bow；Step S03, the electrostatic attraction g (t) required for overcoming wafer deformation is calculated according to the modulus of elasticity of wafer material, its In, the g (t) is the function that electrostatic attraction changes with the process time, and the wafer deformation is convex away from electrostatic chuck direction Go out deformation；Step S04, electrostatic attraction change function N (t)=N0+g (t) in technical process is calculated, so that wafer is in technical process Middle holding is just adsorbed by electrostatic chuck.
- 2. the method for control electrostatic chuck suction according to claim 1, it is characterised in that in step S03, overcome wafer The direction of electrostatic attraction g (t) required for deformation and wafer deformation it is in opposite direction.
- 3. the method for control electrostatic chuck suction according to claim 1, it is characterised in that the horizontal stroke after the wafer deformation Section is arc.
- 4. the method for control electrostatic chuck suction according to claim 3, it is characterised in that the horizontal stroke after the wafer deformation Protruded to the direction away from electrostatic chuck the intermediate region in section.
- 5. the method for control electrostatic chuck suction according to claim 1, it is characterised in that the insulation of the electrostatic chuck One group of DC electrode is inlayed in material.
- 6. the method for control electrostatic chuck suction according to claim 5, it is characterised in that the DC electrode is included just Electrode and negative electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510277990.8A CN104992920B (en) | 2015-05-27 | 2015-05-27 | A kind of method for controlling electrostatic chuck suction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510277990.8A CN104992920B (en) | 2015-05-27 | 2015-05-27 | A kind of method for controlling electrostatic chuck suction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104992920A CN104992920A (en) | 2015-10-21 |
| CN104992920B true CN104992920B (en) | 2017-12-08 |
Family
ID=54304709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510277990.8A Active CN104992920B (en) | 2015-05-27 | 2015-05-27 | A kind of method for controlling electrostatic chuck suction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104992920B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231515B (en) * | 2018-01-11 | 2019-10-11 | 上海华虹宏力半导体制造有限公司 | The transfer approach in silicon chip back side injection technology after being thinned |
| CN110491819B (en) * | 2018-05-14 | 2021-11-12 | 北京北方华创微电子装备有限公司 | Method for balancing electrostatic force and electrostatic chuck |
| CN112259492B (en) * | 2020-10-14 | 2022-08-16 | 华虹半导体(无锡)有限公司 | Electrostatic bonding method and electrostatic bonding apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4692836A (en) * | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
| CN101452870A (en) * | 2007-12-03 | 2009-06-10 | 爱德牌工程有限公司 | Electrostatic chuck and apparatus having the same |
| CN101877303A (en) * | 2009-04-30 | 2010-11-03 | 台湾积体电路制造股份有限公司 | Method for processing wafer and semiconductor manufacturing apparatus using the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9558981B2 (en) * | 2013-11-19 | 2017-01-31 | Applied Materials, Inc. | Control systems employing deflection sensors to control clamping forces applied by electrostatic chucks, and related methods |
-
2015
- 2015-05-27 CN CN201510277990.8A patent/CN104992920B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4692836A (en) * | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
| CN101452870A (en) * | 2007-12-03 | 2009-06-10 | 爱德牌工程有限公司 | Electrostatic chuck and apparatus having the same |
| CN101877303A (en) * | 2009-04-30 | 2010-11-03 | 台湾积体电路制造股份有限公司 | Method for processing wafer and semiconductor manufacturing apparatus using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104992920A (en) | 2015-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6548871B2 (en) | Laminated substrate peeling apparatus | |
| CN104992920B (en) | A kind of method for controlling electrostatic chuck suction | |
| JP2001298072A (en) | Electrostatic chucking device and vacuum processing device using the same | |
| US9427913B2 (en) | Heat transfer sheet adhering apparatus and method | |
| JP5708648B2 (en) | Support board | |
| JP5036614B2 (en) | Substrate stage | |
| JP2018142589A (en) | Substrate fixture and substrate fixing device | |
| US9053967B2 (en) | Apparatus for testing a wafer in a wafer testing process | |
| US10773505B2 (en) | Method of attaching substrate and apparatus for attaching substrate | |
| JP2009094147A (en) | Semiconductor wafer holding device | |
| CN108242421B (en) | Electrostatic chuck device and electrostatic adsorption method | |
| US20210335646A1 (en) | Simultaneous bonding approach for high quality wafer stacking applications | |
| TW200620528A (en) | Method for processing stuck object and electrostatic sticking method | |
| TWI517294B (en) | A method of forming a resin bump on a substrate mounting surface, and a resin protruding layer transfer member | |
| TW202002154A (en) | Electrostatic chuck | |
| CN210575889U (en) | Electrostatic chuck | |
| JP2016195155A (en) | Plasma processing apparatus and plasma processing method | |
| JP2016195151A (en) | Plasma processing apparatus and plasma processing method | |
| JP6481979B2 (en) | Plasma processing apparatus and plasma processing method | |
| US20030150123A1 (en) | Gap gauge | |
| JP6440120B2 (en) | Plasma processing apparatus and plasma processing method | |
| JP2014033045A (en) | Electrostatic attraction method and electrostatic attraction device | |
| CN112864072A (en) | Method for processing substrate | |
| US20050180088A1 (en) | Substrate attaching device and method | |
| JP2005209768A (en) | Electrostatic adsorption device and electrostatic adsorption method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |