CN104980151B - A kind of ring oscillator - Google Patents
A kind of ring oscillator Download PDFInfo
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- CN104980151B CN104980151B CN201510359092.7A CN201510359092A CN104980151B CN 104980151 B CN104980151 B CN 104980151B CN 201510359092 A CN201510359092 A CN 201510359092A CN 104980151 B CN104980151 B CN 104980151B
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Abstract
The present invention provides a kind of ring oscillators, including：N number of phase inverter and 2N current limliting metal-oxide-semiconductor, 2N current limliting metal-oxide-semiconductor include N number of current limliting PMOS tube and N number of current limliting NMOS tube, and each phase inverter is connected with a current limliting PMOS tube and a current limliting NMOS tube；The the first current limliting PMOS tube and the first current limliting NMOS tube being connected with the first phase inverter follow circuit to be connected with Self-bias Current circuit and power supply；The electric current of first current limliting PMOS tube includes the electric current that the electric current that Self-bias Current circuit generates and power supply follow circuit to generate；The electric current of first current limliting NMOS tube includes the electric current that the electric current that Self-bias Current circuit generates and power supply follow circuit to generate；The electric current of first current limliting PMOS tube is transmitted to remaining current limliting PMOS tube in N number of current limliting PMOS tube by mirror image；The electric current of first current limliting NMOS tube is transmitted to remaining current limliting NMOS tube in N number of current limliting NMOS tube by mirror image.
Description
Technical field
The present invention relates to electronic technology fields, more particularly to a kind of ring oscillator.
Background technology
The structure of traditional ring oscillator is as shown in Figure 1, multiple ring inverters are linked in sequence, ring inverter a, ring
Shape phase inverter b, ring inverter c, ring inverter d and ring inverter e are linked in sequence successively, ring inverter e again with ring
The a connections of shape phase inverter.
Traditional ring oscillator haves the shortcomings that power consumption is big and frequency range is big due to the relationship of structure, also,
It is also influenced by technique, supply voltage and temperature bigger.
Invention content
The present invention provides a kind of ring oscillator, big with the ring oscillator frequency variation range for solving the problems, such as traditional.
To solve the above-mentioned problems, the present invention provides a kind of ring oscillators, including：N number of phase inverter and 2N current limliting
Metal-oxide-semiconductor, wherein N is positive integer；
The 2N current limliting metal-oxide-semiconductor includes N number of current limliting PMOS tube and N number of current limliting NMOS tube, each phase inverter and one
A current limliting PMOS tube is connected with a current limliting NMOS tube；
The the first current limliting PMOS tube and the first current limliting NMOS tube being connected with the first phase inverter in N number of phase inverter with
Self-bias Current circuit follows circuit to be connected with power supply；
Wherein, the electric current of the first current limliting PMOS tube includes the electric current and the electricity that the Self-bias Current circuit generates
Source follows the electric current that circuit generates；The electric current of the first current limliting NMOS tube includes the electric current that the Self-bias Current circuit generates
The electric current that circuit generates is followed with the power supply；
The electric current of the first current limliting PMOS tube is transmitted to remaining current limliting in N number of current limliting PMOS tube by mirror image
PMOS tube；The electric current of the first current limliting NMOS tube is transmitted to remaining current limliting in N number of current limliting NMOS tube by mirror image
NMOS tube.
Preferably, the electric current of the current limliting PMOS tube is equal with the electric current of current limliting NMOS tube.
Preferably, it includes that the diode for being equivalent to a resistance connection PMOS tube and one are equivalent that the power supply, which follows circuit,
NMOS tube is connected in the diode of resistance；
Wherein, the diode connection PMOS tube connect NMOS tube series connection with the diode.
Preferably, the diode connection PMOS tube connect the voltage at the tie point of NMOS tube with the diode by electricity
Source voltage connects partial pressure in NMOS tube with the diode in diode connection PMOS tube and obtains.
Preferably, enable signal is inputted in the Self-bias Current circuit, the auto bias circuit is enabled to start；
N number of current limliting PMOS tube in the Self-bias Current circuit be connected, N number of current limliting NMOS tube it is described from
It is connected in bias current circuit.
Compared with prior art, the present invention includes following advantages：
On the basis of traditional ring oscillator, the current limliting metal-oxide-semiconductor being connected with phase inverter is increased.Current limliting metal-oxide-semiconductor
Current source derives from Self-bias Current circuit in two parts, a part, and another part follows circuit from power supply.Wherein,
Self-bias Current circuit is mainly used for current deviation caused by compensating technique change, and power supply follows circuit mainly for generation of following
Mains voltage variations and the electric current changed.The size of current of current limliting metal-oxide-semiconductor determines the speed of phase inverter charge and discharge time, from
And the output frequency of different ring oscillators is obtained, improve the frequency convergence property of ring oscillator.
Description of the drawings
Fig. 1 is the structural schematic diagram of traditional ring oscillator；
Fig. 2 is a kind of structural schematic diagram of ring oscillator in the embodiment of the present invention one and two；
Fig. 3 is that the current limliting metal-oxide-semiconductor in the embodiment of the present invention one and two follows circuit with Self-bias Current circuit and power supply
Connection relationship diagram；
Fig. 4 is the structural schematic diagram that power supply in the embodiment of the present invention two follows circuit；
Fig. 5 is the structural schematic diagram of the Self-bias Current circuit in the embodiment of the present invention two.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
A kind of ring oscillator provided by the invention is discussed in detail below by several specific embodiments are enumerated.
Embodiment one
The embodiment of the present invention one provides a kind of ring oscillator.
With reference to Fig. 2, a kind of structural schematic diagram of ring oscillator in the embodiment of the present invention one is shown.
The ring oscillator may include N number of phase inverter and 2N current limliting metal-oxide-semiconductor, wherein N is positive integer.
The 2N current limliting metal-oxide-semiconductor includes N number of current limliting PMOS tube and N number of current limliting NMOS tube, each phase inverter and one
A current limliting PMOS tube is connected with a current limliting NMOS tube.
Ring oscillator shown in Fig. 2 includes five phase inverters, and five phase inverter sequences are connected to form annular, respectively
Phase inverter a, phase inverter b, phase inverter c, phase inverter d and phase inverter e further comprise ten current limliting metal-oxide-semiconductors, respectively current limliting MOS
Pipe P3, current limliting metal-oxide-semiconductor P4, current limliting metal-oxide-semiconductor P5, current limliting metal-oxide-semiconductor P6, current limliting metal-oxide-semiconductor P7, current limliting metal-oxide-semiconductor N3, current limliting metal-oxide-semiconductor N4,
Current limliting metal-oxide-semiconductor N5, current limliting metal-oxide-semiconductor N6, current limliting metal-oxide-semiconductor N7.
Wherein, current limliting metal-oxide-semiconductor P3, current limliting metal-oxide-semiconductor P4, current limliting metal-oxide-semiconductor P5, current limliting metal-oxide-semiconductor P6 and current limliting metal-oxide-semiconductor P7 are limited
Flow PMOS tube.Current limliting metal-oxide-semiconductor N3, current limliting metal-oxide-semiconductor N4, current limliting metal-oxide-semiconductor N5, current limliting metal-oxide-semiconductor N6 and current limliting metal-oxide-semiconductor N7 are current limliting
NMOS tube.
Phase inverter a is connected with current limliting PMOS tube P3 and current limliting NMOS tube N3, phase inverter b and current limliting PMOS tube P4 and current limliting
NMOS tube N4 is connected, and phase inverter a is connected with current limliting PMOS tube P3 and current limliting NMOS tube N3, phase inverter c and current limliting PMOS tube P5 and
Current limliting NMOS tube N5 is connected, and phase inverter d is connected with current limliting PMOS tube P6 and current limliting NMOS tube N6, phase inverter e and current limliting PMOS tube
P7 is connected with current limliting NMOS tube N7.
The the first current limliting PMOS tube and the first current limliting NMOS tube being connected with the first phase inverter in N number of phase inverter with
Self-bias Current circuit follows circuit to be connected with power supply.
With the first phase inverter (i.e. the first current limliting PMOS tube (i.e. current limliting PMOS tube P3) and the first current limliting that phase inverter a) is connected
NMOS tube (i.e. current limliting NMOS tube N3) follows circuit to be connected with Self-bias Current circuit and power supply, as shown in Figure 3.
Wherein, the electric current of the first current limliting PMOS tube may include the electric current and institute that the Self-bias Current circuit generates
State the electric current that power supply follows circuit to generate；The electric current of the first current limliting NMOS tube may include the Self-bias Current circuit production
Raw electric current and the power supply follow the electric current that circuit generates.
The electric current of the first current limliting PMOS tube can be transmitted to remaining limit in N number of current limliting PMOS tube by mirror image
Flow PMOS tube；The electric current of the first current limliting NMOS tube can be transmitted to remaining in N number of current limliting NMOS tube by mirror image
Current limliting NMOS tube.
In conclusion the embodiment of the present invention on the basis of traditional ring oscillator, increases and to be connected with phase inverter
Current limliting metal-oxide-semiconductor.The current source of current limliting metal-oxide-semiconductor derives from Self-bias Current circuit, another part source in two parts, a part
Circuit is followed in power supply.Wherein, Self-bias Current circuit is mainly used for current deviation caused by compensating technique change, and power supply follows
Circuit is mainly for generation of the electric current for following mains voltage variations and changing.The size of current of current limliting metal-oxide-semiconductor, determines phase inverter
The speed of charge and discharge time, to obtain the output frequency of different ring oscillators, the frequency for improving ring oscillator is received
Hold back characteristic.
Embodiment two
Second embodiment of the present invention provides a kind of ring oscillators.
With reference to Fig. 2, a kind of structural schematic diagram of ring oscillator in the embodiment of the present invention two is shown.
The ring oscillator may include N number of phase inverter and 2N current limliting metal-oxide-semiconductor, wherein N is positive integer.
The 2N current limliting metal-oxide-semiconductor includes N number of current limliting PMOS tube and N number of current limliting NMOS tube, each phase inverter and one
A current limliting PMOS tube is connected with a current limliting NMOS tube.
Ring oscillator shown in Fig. 2 includes five phase inverters, and five phase inverter sequences are connected to form annular, respectively
Phase inverter a, phase inverter b, phase inverter c, phase inverter d and phase inverter e further comprise ten current limliting metal-oxide-semiconductors, respectively current limliting MOS
Pipe P3, current limliting metal-oxide-semiconductor P4, current limliting metal-oxide-semiconductor P5, current limliting metal-oxide-semiconductor P6, current limliting metal-oxide-semiconductor P7, current limliting metal-oxide-semiconductor N3, current limliting metal-oxide-semiconductor N4,
Current limliting metal-oxide-semiconductor N5, current limliting metal-oxide-semiconductor N6, current limliting metal-oxide-semiconductor N7.
Wherein, current limliting metal-oxide-semiconductor P3, current limliting metal-oxide-semiconductor P4, current limliting metal-oxide-semiconductor P5, current limliting metal-oxide-semiconductor P6 and current limliting metal-oxide-semiconductor P7 are limited
Flow PMOS tube.Current limliting metal-oxide-semiconductor N3, current limliting metal-oxide-semiconductor N4, current limliting metal-oxide-semiconductor N5, current limliting metal-oxide-semiconductor N6 and current limliting metal-oxide-semiconductor N7 are current limliting
NMOS tube.
Phase inverter a is connected with current limliting PMOS tube P3 and current limliting NMOS tube N3, phase inverter b and current limliting PMOS tube P4 and current limliting
NMOS tube N4 is connected, and phase inverter a is connected with current limliting PMOS tube P3 and current limliting NMOS tube N3, phase inverter c and current limliting PMOS tube P5 and
Current limliting NMOS tube N5 is connected, and phase inverter d is connected with current limliting PMOS tube P6 and current limliting NMOS tube N6, phase inverter e and current limliting PMOS tube
P7 is connected with current limliting NMOS tube N7.
The the first current limliting PMOS tube and the first current limliting NMOS tube being connected with the first phase inverter in N number of phase inverter with
Self-bias Current circuit follows circuit to be connected with power supply.
With the first phase inverter (i.e. the first current limliting PMOS tube (i.e. current limliting PMOS tube P3) and the first current limliting that phase inverter a) is connected
NMOS tube (i.e. current limliting NMOS tube N3) follows circuit to be connected with Self-bias Current circuit and power supply, as shown in Figure 3.
Wherein, the electric current of the first current limliting PMOS tube may include the electric current and institute that the Self-bias Current circuit generates
State the electric current that power supply follows circuit to generate；The electric current of the first current limliting NMOS tube may include the Self-bias Current circuit production
Raw electric current and the power supply follow the electric current that circuit generates.
Preferably, the electric current of the current limliting PMOS tube can be equal with the electric current of current limliting NMOS tube.
The electric current of the first current limliting PMOS tube can be transmitted to remaining limit in N number of current limliting PMOS tube by mirror image
Flow PMOS tube；The electric current of the first current limliting NMOS tube can be transmitted to remaining in N number of current limliting NMOS tube by mirror image
Current limliting NMOS tube.
Preferably, it may include that a diode for being equivalent to resistance connects two NMOS tubes that the power supply, which follows circuit,
As shown in Figure 4.
Wherein, two NMOS tubes series connection of the diode connection, forms an equivalent resistance string.
Preferably, the diode connection PMOS tube connect the voltage at the tie point VOUT of NMOS tube with the diode
Partial pressure in NMOS tube is connected with the diode to obtain, realize tie point by supply voltage in diode connection PMOS tube
The function of voltage follow mains voltage variations at VOUT.
Moreover, connecting NMOS tube equivalent resistance with diode with diode connection PMOS tube, may be implemented on chip area
Optimization.
The structural schematic diagram of the Self-bias Current circuit is as shown in figure 5, the Self-bias Current circuit is mainly used to mend
Repay the error of process drift introducing.N number of current limliting PMOS tube is connected in the Self-bias Current circuit, N number of current limliting
NMOS tube is connected in the Self-bias Current circuit.
Specifically, current limliting PMOS tube all in the embodiment of the present invention is all connected together by PB, all current limliting NMOS
Pipe is connected together using NB.
Enable signal is inputted in the Self-bias Current circuit, the auto bias circuit is enabled to start.When the enabled letter of input
Number en by from 0 draw high to 1 when, just provide one to the Self-bias Current circuit and go up electric pathway so that the self-bias
Setting current circuit being capable of self-starting.After waiting for the Self-bias Current circuit stability, electric current is exported by IOUT.
It follows mechanism and Self-bias Current to compensate process drift error using current limiting mechanism, power supply, can make annular
The frequency range of oscillator substantially reduces, and for identical ring inverter size, final frequency range exists
30M is the 14.5% of the frequency range of traditional ring oscillator.
It should be noted that one current limliting PMOS tube of connection and a current limliting on a phase inverter in the embodiment of the present invention
Realize that charging, the size of current of electric discharge are identical when NMOS tube is to allow phase inverter to overturn again, the clock pulse width of generation is 50%
Empty accounting is optimal state.
In conclusion the embodiment of the present invention on the basis of traditional ring oscillator, increases and to be connected with phase inverter
Current limliting metal-oxide-semiconductor.The current source of current limliting metal-oxide-semiconductor derives from Self-bias Current circuit, another part source in two parts, a part
Circuit is followed in power supply.Wherein, Self-bias Current circuit is mainly used for current deviation caused by compensating technique change, and power supply follows
Circuit is mainly for generation of the electric current for following mains voltage variations and changing.The size of current of current limliting metal-oxide-semiconductor, determines phase inverter
The speed of charge and discharge time, to obtain the output frequency of different ring oscillators, as long as providing one powers on enable signal,
The output frequency for the ring oscillator that can be within 100ns is stablized, and the frequency convergence property of ring oscillator is improved.
Those skilled in the art should also know that embodiment described in this description belongs to preferred embodiment, it is involved
And action and module be not necessarily essential to the invention.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with
The difference of other embodiment, the same or similar parts between the embodiments can be referred to each other.
It is provided for the embodiments of the invention a kind of ring oscillator above, is described in detail, it is used herein
Principle and implementation of the present invention are described for specific case, and the explanation of above example is only intended to help to understand this
The method and its core concept of invention；Meanwhile for those of ordinary skill in the art, according to the thought of the present invention, specific
There will be changes in embodiment and application range, in conclusion the content of the present specification should not be construed as to the present invention's
Limitation.
Claims (4)
1. a kind of ring oscillator, which is characterized in that including：N number of phase inverter and 2N current limliting metal-oxide-semiconductor, wherein N is positive odd number；
The 2N current limliting metal-oxide-semiconductor includes N number of current limliting PMOS tube and N number of current limliting NMOS tube, and each phase inverter and one limit
Stream PMOS tube is connected with a current limliting NMOS tube, wherein the previous phase inverter of the input terminal of the phase inverter and the phase inverter
Output end connection, the output end of the phase inverter connect with the input terminal of the latter phase inverter of the phase inverter；It is described anti-
The grounding pin of phase device is grounded by current limliting NMOS tube, wherein the leakage of the grounding pin of the phase inverter and the current limliting NMOS tube
Pole connects, the source electrode ground connection of the current limliting NMOS tube；The power pins of the phase inverter are by current limliting PMOS tube connection power supply electricity
Source, wherein the power pins of the phase inverter are connect with the drain electrode of the current limliting PMOS tube, the source electrode of the current limliting PMOS tube with
The power supply connection；
The the first current limliting PMOS tube and the first current limliting NMOS tube being connected with the first phase inverter in N number of phase inverter are and self-bias
Set current circuit follows circuit to be connected with power supply, wherein first phase inverter is made of a PMOS tube and a NMOS tube,
The source electrode of the PMOS tube is connect with power supply, drain electrode and institute of the grid of the PMOS tube with the first current limliting PMOS tube
The drain electrode connection of the first current limliting NMOS tube is stated, the grid of the drain electrode and the NMOS tube of the PMOS tube, drain electrode connects, described
The source electrode of NMOS tube is grounded；The source electrode of the first current limliting PMOS tube is connect with power supply, the first current limliting PMOS tube
Grid is connect with the drain electrode of the first current limliting PMOS tube and the drain electrode of the first current limliting NMOS tube, the first current limliting PMOS
The drain electrode of pipe is connect with the drain electrode of the first current limliting NMOS tube, and grid and the power supply of the first current limliting NMOS tube follow
Circuit connects, and the source electrode of the first current limliting NMOS tube passes through resistance eutral grounding；The drain electrode of the first current limliting PMOS tube and described
The drain electrode of first current limliting NMOS tube is connect with the Self-bias Current circuit, wherein being inputted in the Self-bias Current circuit makes
Energy signal, enables the Self-bias Current circuit start；N number of current limliting PMOS tube is connected in the Self-bias Current circuit,
N number of current limliting NMOS tube is connected in the Self-bias Current circuit, and all current limliting PMOS tube are all connected together by PB,
All current limliting NMOS tubes are connected together using NB；
Wherein, the electric current of the first current limliting PMOS tube include electric current that the Self-bias Current circuit generates and the power supply with
The electric current generated with circuit；The electric current of the first current limliting NMOS tube includes the electric current and institute that the Self-bias Current circuit generates
State the electric current that power supply follows circuit to generate；
The electric current of the first current limliting PMOS tube is transmitted to remaining current limliting PMOS in N number of current limliting PMOS tube by mirror image
Pipe；The electric current of the first current limliting NMOS tube is transmitted to remaining current limliting NMOS tube in N number of current limliting NMOS tube by mirror image.
2. ring oscillator according to claim 1, which is characterized in that the electric current of the current limliting PMOS tube and the current limliting
The electric current of NMOS tube is equal.
3. ring oscillator according to claim 1, which is characterized in that the power supply follows circuit to be equivalent to including one
Two NMOS tubes of the diode connection of resistance；
Wherein, two NMOS tubes series connection of the diode connection, the drain electrode of one of NMOS tube receive supply voltage, grid
It is connected with drain electrode, source electrode is connect with the drain electrode of another NMOS tube；The grid of another NMOS tube is connected with drain electrode, source electrode
Ground connection.
4. ring oscillator according to claim 3, which is characterized in that the electricity of two NMOS tubes of the diode connection
Pressure, which is divided by supply voltage between the tie point for two NMOS tubes that the diode connects, to be obtained.
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| CN201510359092.7A CN104980151B (en) | 2015-06-25 | 2015-06-25 | A kind of ring oscillator |
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| CN201510359092.7A CN104980151B (en) | 2015-06-25 | 2015-06-25 | A kind of ring oscillator |
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| CN104980151A CN104980151A (en) | 2015-10-14 |
| CN104980151B true CN104980151B (en) | 2018-08-17 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5544120A (en) * | 1993-04-07 | 1996-08-06 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit including ring oscillator of low current consumption |
| CN1622457A (en) * | 2003-11-25 | 2005-06-01 | 三洋电机株式会社 | Oscillator circuit |
| CN1627440A (en) * | 2003-12-10 | 2005-06-15 | 海力士半导体有限公司 | Refresh oscillator |
| CN104300971A (en) * | 2013-07-17 | 2015-01-21 | 北京兆易创新科技股份有限公司 | Frequency stabilized ring oscillator |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4204210B2 (en) * | 2001-08-29 | 2009-01-07 | 株式会社リコー | PLL circuit |
-
2015
- 2015-06-25 CN CN201510359092.7A patent/CN104980151B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5544120A (en) * | 1993-04-07 | 1996-08-06 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit including ring oscillator of low current consumption |
| CN1622457A (en) * | 2003-11-25 | 2005-06-01 | 三洋电机株式会社 | Oscillator circuit |
| CN1627440A (en) * | 2003-12-10 | 2005-06-15 | 海力士半导体有限公司 | Refresh oscillator |
| CN104300971A (en) * | 2013-07-17 | 2015-01-21 | 北京兆易创新科技股份有限公司 | Frequency stabilized ring oscillator |
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| CN104980151A (en) | 2015-10-14 |
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Address after: 230601 Building 1, Pearl Plaza, Hefei Economic and Technological Development Zone, Anhui Province Patentee after: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 230601 Building 1, Pearl Plaza, Hefei Economic and Technological Development Zone, Anhui Province Patentee before: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
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