CN104977798A - Image correcting method - Google Patents
Image correcting method Download PDFInfo
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- CN104977798A CN104977798A CN201410133561.9A CN201410133561A CN104977798A CN 104977798 A CN104977798 A CN 104977798A CN 201410133561 A CN201410133561 A CN 201410133561A CN 104977798 A CN104977798 A CN 104977798A
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000008859 change Effects 0.000 claims abstract description 24
- 238000012937 correction Methods 0.000 claims description 38
- 238000013461 design Methods 0.000 claims description 34
- 238000002715 modification method Methods 0.000 claims description 26
- 238000012360 testing method Methods 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 7
- 239000000428 dust Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 description 28
- 230000003287 optical effect Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 238000013459 approach Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012940 design transfer Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 206010057855 Hypotelorism of orbit Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- General Physics & Mathematics (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
An image correcting method comprises the steps of providing an initial image which comprises a plurality of contact hole images and a plurality of connected images, wherein the contact hole images and the corrected images are overlapped, the contact hole images are rectangular, the side lengths of the contact hole images, vertical to the side lengths of the connected images, are first side lengths, and the side lengths of the contact hole images, parallel to the side lengths of the connected images, are second side lengths; judging that contact hole images to be corrected are positioned in a dense area or an isolated area; when the contact hole images to be corrected are positioned in the isolated area, carrying out first image change on the contact hole images to be corrected, thus increasing the first side lengths and the second side lengths of the contact hole images to be corrected; and when the contact hole images to be corrected are positioned in the dense area, carrying out second image change on the contact hole images to be corrected, thus increasing the second side lengths of the contact hole images to be corrected, wherein the first lengths are smaller than the second side lengths. The performance of an electric conduction structure formed by the corrected images can be improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of figure modification method.
Background technology
In semiconductor fabrication, photoetching technique is an important semiconductor fabrication, significant to the development of integrated circuit.Before photoetching process starts, first need circuit pattern to copy on mask plate, then by lithographic equipment, the patterning on mask plate is copied on silicon chip.
Along with integrated circuit feature size (CD, Critical Dimension) reduce, and be exposed board (OET, Optical Exposure Tool) the impact of resolution limit (Resolution Limit), when carrying out exposure manufacture process to carry out design transfer to the reticle pattern of high-density array, easy generation optical approach effect (OPE, Optical Proximity Effect), such as right angle turns rounding (Right-angledCorner Rounded), linear end tightens (Line End Shortened) and straight line live width increases or reduces (Line Width Increase/Decrease) etc., it is all the reticle pattern transfer defect that common light approach effect causes.
In order to avoid the problems referred to above, need that optics is carried out to circuit pattern and close on correction (OPC, OpticalProximity Correction), to eliminate optical approach effect, and then be formed on mask plate according to corrected circuit pattern.Therefore, optics closes on correction namely by carrying out amendment in advance to circuit pattern, make index word just can the defect that causes of compensate for optical approach effect, after being formed in mask plate with the circuit pattern closing on correction through optics, with the design transfer on this mask plate on wafer, the pattern that wafer is formed can be made to reach the requirement of exposure technology.
Along with reducing of integrated circuit feature size, for semiconductor devices electrical connection time in integrated circuits metal interconnecting wires (Metal Line) and the size of contact hole (Via) is also corresponding reduces, how to ensure that the performance of metal interconnecting wires and contact hole is particularly important.
But, although existing optical proximity correction method can eliminate optical approach effect, the performance of the contact hole that revised figure is formed cannot be taken into account simultaneously, easily cause the contact hole hydraulic performance decline formed with revised figure.
Summary of the invention
The problem that the present invention solves is to provide a kind of figure modification method, and the conductive structure performance formed with revised figure is improved.
For solving the problem, the invention provides a kind of figure modification method, comprise: initial graphics is provided, described initial graphics comprises some contact hole graph and some interconnection line figures, described contact hole graph and interconnection line graphics overlay, described contact hole graph is rectangle, and described contact hole graph is first length of side perpendicular to the length of side of interconnection line figure, and the length of side being parallel to interconnection line figure is second length of side; Wait described in judgement that revising contact hole graph is positioned at compact district or isolated region; When described in time revising contact hole graph and be positioned at isolated region, wait that revising contact hole graph carries out the first graphic change to described, described in making, wait first length of side and the increase of second length of side of revising contact hole graph; When described in time revising contact hole graph and be positioned at compact district, wait that revising contact hole graph carries out second graph change to described, wait described in making that second length of side revising contact hole graph increases, and first length of side is less than second length of side.
Optionally, also comprise: when described in time revising contact hole graph and be positioned at compact district, wait that revising contact hole graph carries out design rule detection to described; And described in changing according to the result that described design rule detects, wait to revise first length of side of contact hole graph.
Optionally, described design rule detects and comprises: wait described in test to revise contact hole graph first length of side and described in wait to revise the distance between contact hole graph to adjacent interconnection line graph.
Optionally, when described in time revising contact hole graph and interconnection line figure meets design rule, wait described in test to revise the distance of contact hole graph to adjacent contact hole pattern, obtain second distance; When described second distance is less than the second pre-set dimension, described in making, wait that first length of side revising contact hole graph reduces; When described second distance is greater than the second pre-set dimension, described in making, wait that first length of side revising contact hole graph increases.
Optionally, when described second distance is less than or equal to the second pre-set dimension, described second distance is less, described in wait revise contact hole graph first the length of side reduce size larger.
Optionally, when described second distance is greater than the second pre-set dimension, described second distance is larger, described in wait revise contact hole graph first the length of side increase size larger.
Optionally, described second pre-set dimension is 500 dust ~ 700 dusts.
Optionally, when described in time revising contact hole graph and violate design rule, wait described in making that first length of side revising contact hole graph increases, and the size that described first length of side increases is less than the size that second length of side increases.
Optionally, also comprise: wait described in test to revise the distance of contact hole graph to adjacent contact hole pattern, obtain second distance; When described second distance is larger, described in wait revise contact hole graph first the length of side increase size larger.
Optionally, treat described in determining that correction contact hole graph is positioned at compact district or the method for isolated region comprises: wait described in test to revise contact hole graph to the distance of adjacent interconnection line graph, obtain the first distance; When described first distance is greater than the first pre-set dimension, described in wait revise contact hole graph be positioned at isolated region; When described first distance is less than the first pre-set dimension, described in wait revise contact hole graph be positioned at compact district.
Optionally, wait described in that the both sides revising contact hole graph have interconnection line figure respectively.
Optionally, when the first distance of described both sides to adjacent interconnection line graph wait revising contact hole graph is all less than the first pre-set dimension, described in treat first length of side of correction contact hole graph change to first size; Treat that the first side of correction contact hole graph is less than the first pre-set dimension to the first distance of adjacent interconnection line graph when described, when first distance of described the second side to adjacent interconnection line graph wait revising contact hole graph is greater than the first pre-set dimension, described wait revise contact hole graph first length of side change to the second size, described second size is greater than first size.
Optionally, treat described in determining that correction contact hole graph is positioned at compact district or the method for isolated region comprises: wait described in test to revise the distance of contact hole graph to adjacent contact hole pattern, obtain second distance; When described second distance is greater than the first pre-set dimension, described in wait revise contact hole graph be positioned at isolated region; When described second distance is less than the first pre-set dimension, described in wait revise contact hole graph be positioned at compact district.
Optionally, described first pre-set dimension is greater than 1000 dusts.
Optionally, in described initial graphics, first length of side of described contact hole graph is 60 nanometer ~ 70 nanometers, and second length of side of described contact hole graph is 60 nanometer ~ 70 nanometers.
Optionally, some interconnection line figures are arranged in parallel.
Compared with prior art, technical scheme of the present invention has the following advantages:
In method of the present invention, described in first determining, wait that revising contact hole graph is positioned at isolated region or compact district.Wait that revising contact hole pattern is positioned at isolated region when described, wait to revise the contact hole that contact hole pattern formed not easily and between adjacent interconnection line or contact hole dielectric breakdown occurs with described, therefore, it is possible to wait first length of side and second length of side of revising contact hole graph described in increasing simultaneously, wait described in making that the area revising contact hole graph increases, to wait the electromobility revising the conductive plunger that contact hole pattern is formed described in improving.When described in time revising contact hole pattern and be positioned at compact district, dielectric breakdown is there is between the interconnection line easy and adjacent with the described contact hole treating that correction contact hole pattern is formed or contact hole, therefore second length of side of contact hole graph is waited to revise described in only increasing, increase as required simultaneously or reduce first length of side, while waiting described in guarantee that revising contact hole pattern is not easy to adjacent interconnection line or contact hole generation dielectric breakdown, wait described in avoiding that the area revising contact hole graph is reduced, therefore, it is possible to while preventing dielectric breakdown, ensure that the electromobility waiting to revise the conductive plunger that contact hole pattern is formed.Therefore, the performance of the contact hole formed with revised figure improves.
Further, when described in time revising contact hole graph and be positioned at compact district, wait that revising contact hole graph carries out design rule detection to described, and wait to revise first length of side of contact hole graph described in changing according to the result that described design rule detects.Can while not reducing contact hole graph area, avoid waiting revising hypotelorism between contact hole graph and adjacent interconnection line graph or contact hole graph, thus can avoid between formed adjacent contact hole or between contact hole and interconnection line, dielectric breakdown occur.And the conductive plunger electromobility formed in formed contact hole can not reduce, and ensure that the functional of formed conductive structure.
Further, described in time revising contact hole graph and interconnection line figure and meet design rule, namely described in exposure in time revising contact hole graph, optical approach effect can not occur, the first limit that therefore contact hole graph revised by described band can either reduce and also can increase.When described second distance is less than the second pre-set dimension, wait to revise contact hole graph namely too near to the distance of adjacent contact hole pattern, therefore need described in making, to wait that first length of side revising contact hole graph reduces.When described second distance is greater than the second pre-set dimension, wait to revise contact hole graph namely comparatively large to the distance of adjacent contact hole pattern, described in therefore allowing, wait that first length of side revising contact hole graph increases.
Further, when described in time revising contact hole graph and violate design rule, namely wait described in exposure that revising contact hole graph optical approach effect can occur, described in therefore not allowing, wait that first length of side revising contact hole graph reduces.Treat described in making that first length of side and second length of side of correction contact hole graph all increase, and, wait that revising contact hole graph is positioned at compact district due to described, therefore the size that described first length of side increases needs the size being less than the second length of side increase, thus, to wait that the conductive plunger electromobility revising contact hole formation is comparatively large, and not easily there is dielectric breakdown.
Accompanying drawing explanation
Fig. 1 and Fig. 2 is a kind of embodiment schematic diagram revising contact hole pattern of the present invention;
Fig. 3 is the schematic flow sheet of the figure makeover process of the embodiment of the present invention;
Fig. 4 to Fig. 8 is the structural representation of the figure makeover process of the embodiment of the present invention;
Fig. 9 be when described in time revising contact hole graph and interconnection line figure and meet meter rule, change the schematic flow sheet waiting to revise contact hole graph first length of side;
Figure 10 be when described in time revising contact hole graph and interconnection line figure and violate design rule, change the schematic flow sheet waiting to revise contact hole graph first length of side;
Figure 11 is after revising rear figure formation contact hole, the voltage breakdown between contact hole and the graph of a relation puncturing ratio.
Embodiment
As stated in the Background Art, optical proximity correction method while elimination optical approach effect, cannot take into account the contact hole performance that etching is formed using revised figure as mask pattern.
In semiconductor devices or circuit, metal interconnecting wires is positioned at contact hole top or bottom, and the conductive plunger formed in contact hole is interconnected with metal interconnecting wires, therefore contact hole pattern and pattern of metal interconnect lines overlapped.When carrying out optics to contact hole pattern and closing on correction, need to consider to wait whether revise contact hole is positioned at device compact district.If described in wait revise contact hole graph be positioned at device compact district, then expose described in wait revise contact hole graph time, not only easily produce optical approach effect, also easily cause between formed contact hole or between contact hole and adjacent metal interconnects line and dielectric breakdown occurs.
Fig. 1 and Fig. 2 is a kind of embodiment schematic diagram revising contact hole pattern of the present invention.
Please refer to Fig. 1, provide initial graphics 100, described initial pattern 100 comprises: some pattern of metal interconnect lines 101 arranged in parallel and the some contact hole patterns 102 overlapping with pattern of metal interconnect lines 101.The width of described pattern of metal interconnect lines 101 is L2; Described contact hole pattern 102 is square, and the described foursquare initial length of side is L1; Distance between adjacent contact sectional hole patterns 102 is H1.
Please refer to Fig. 2, carry out figure correction to described initial graphics 100, make the foursquare length of side of described contact hole pattern 102 be contracted to L2, the distance between adjacent contact sectional hole patterns 102 increases to H2.
Above-mentioned figure modification method can while suppression optical approach effect, increase the distance between adjacent contact sectional hole patterns, to reduce time-based dielectric breakdown (TDDB, the TimeDependent Dielectric Breakdown) phenomenon between adjacent contact hole.But, the corresponding reduction of area due to described contact hole pattern, causes the conductive plunger resistivity formed with described contact hole pattern to improve, the electromobility (EM of described conductive plunger, Electro-Migration) decline, cause the hydraulic performance decline of formed conductive plunger.
In order to solve the problem, the present invention proposes another figure modification method.Please refer to Fig. 3, Fig. 3 is the schematic flow sheet of the figure makeover process of the embodiment of the present invention, comprising:
Step S11, initial graphics is provided, described initial graphics comprises some contact hole graph and some interconnection line figures, described contact hole graph and interconnection line graphics overlay, described contact hole graph is rectangle, described contact hole graph is first length of side perpendicular to the length of side of interconnection line figure, and the length of side being parallel to interconnection line figure is second length of side;
Step S12, waits described in judgement that revising contact hole graph is positioned at compact district or isolated region;
To described, step S13, when described in time revising contact hole graph and be positioned at isolated region, wait that revising contact hole graph carries out the first graphic change, waits first length of side and the increase of second length of side of revising contact hole graph described in making;
To described, step S14, when described in time revising contact hole graph and be positioned at compact district, wait that revising contact hole graph carries out second graph change, wait that second length of side revising contact hole graph increases, and first length of side is less than second length of side described in making.
Wherein, wait that revising contact hole pattern is positioned at isolated region when described, wait to revise the contact hole that contact hole pattern formed not easily and between adjacent interconnection line or contact hole dielectric breakdown occurs with described, therefore, it is possible to wait first length of side and second length of side of revising contact hole graph described in increasing simultaneously, wait described in making that the area revising contact hole graph increases, to wait the electromobility revising the conductive plunger that contact hole pattern is formed described in improving.When described in time revising contact hole pattern and be positioned at compact district, dielectric breakdown is there is between the interconnection line easy and adjacent with the described contact hole treating that correction contact hole pattern is formed or contact hole, therefore second length of side of contact hole graph is waited to revise described in only increasing, and increase according to demand or reduce first length of side, while waiting described in guarantee that revising contact hole pattern is not easy to adjacent interconnection line or contact hole generation dielectric breakdown, wait described in avoiding that the area revising contact hole graph is reduced, therefore, it is possible to while preventing dielectric breakdown, ensure that the electromobility waiting to revise the conductive plunger that contact hole pattern is formed.Therefore, the performance of the contact hole formed with revised figure improves.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Perform S11, provide initial graphics 200, as shown in Figure 4.
Described initial graphics 200 comprises some contact hole graph 201 and some interconnection line figures 202, described contact hole graph 201 is overlapping with interconnection line figure 202, described contact hole graph 201 is rectangle, described contact hole graph 201 is the first length of side L1 perpendicular to interconnection line figure 202 length of side, and the length of side being parallel to interconnection line figure 202 is the second length of side L2.
Described interconnection line figure 202 is copied on mask plate, interconnection line graphic mask version can be formed, expose with the photoresist of described interconnection line graphic mask version to crystal column surface, can described interconnection line figure 202 be copied on wafer, after the metal level of the photoresist etching crystal column surface after exposure, interconnection line can be formed on wafer.
Described contact hole graph 201 is copied on mask plate, contact hole graph mask plate can be formed, expose with the photoresist of described contact hole graph mask plate to crystal column surface, can described contact hole graph 201 be copied on wafer, after the photoresist etching wafer after exposure, contact hole can be formed, for the formation of conductive plunger in described contact hole on wafer.Described conductive plunger is used for the upper and lower two-layer interconnection line of conducting, and therefore, described contact hole graph 201 is overlapping with interconnection line figure 202.
In the present embodiment, some interconnection line figures 202 are arranged in parallel, and the some contact hole graph 201 be positioned on adjacent interconnection line graph 202 are interspersed, and contact hole graph 201 and interconnection line figure 202 axis overlapping with this contact hole graph 201 overlap.
In described initial graphics 200, the first length of side L1 of described contact hole graph 201 is 60 nanometer ~ 70 nanometers, and the second length of side L2 of described contact hole graph 201 is 60 nanometer ~ 70 nanometers.In the present embodiment, the contact hole graph 201 in described initial graphics 200 is square, and described first length of side L1 is equal with the second length of side L2.
In the present embodiment, the width of described interconnection line figure 201 is less than described first length of side L1, and therefore, described contact hole graph 201 is parallel to the border of interconnection line figure 202, protrudes from the border of described interconnection line figure 202.
Perform S12, described in judgement, wait that revising contact hole graph 201a is positioned at compact district or isolated region.
Described wait revise contact hole graph 201a be positioned at compact district or isolated region, can by waiting to revise contact hole graph 201a to the Distance Judgment of adjacent interconnection line graph 202, or can by treating the Distance Judgment of correction contact hole graph 201a to adjacent contact hole pattern 201.
In the present embodiment, treat described in determining that correction contact hole graph 201a is positioned at compact district or the method for isolated region comprises: wait described in test to revise the distance of contact hole graph 201a to adjacent interconnection line graph 202, obtain the first distance H1(as shown in Figure 4); When described first distance H1 is greater than the first pre-set dimension, described in wait revise contact hole graph 201a be positioned at isolated region; When described first distance H1 is less than the first pre-set dimension, described in wait revise contact hole graph 201a be positioned at compact district.
In the present embodiment, described first pre-set dimension is greater than 1000 dusts.In other embodiments, described first pre-set dimension can adjust according to the design requirement of integrated circuit, dielectric breakdown phenomenon can not occur between the conductive structure formed with adjacent pattern and be as the criterion.
In another embodiment, treat described in determining that correction contact hole graph is positioned at compact district or the method for isolated region comprises: wait described in test to revise the distance of contact hole graph to adjacent contact hole pattern, obtain second distance; When described second distance is greater than the first pre-set dimension, described in wait revise contact hole graph be positioned at isolated region; When described second distance is less than the first pre-set dimension, described in wait revise contact hole graph be positioned at compact district.
It should be noted that, described in when the first distance H1 revising contact hole graph 201a at least side is less than the first pre-set dimension, treat namely that correction contact hole graph 201a is positioned at compact district.
In one embodiment, please refer to Fig. 5, describedly wait that revising the both sides of contact hole graph 201a has interconnection line figure 202 respectively, and described in wait that the first distance H1 revising contact hole graph first side A is less than the first pre-set dimension, describedly wait that the first distance H1 revising contact hole second side B is greater than the first pre-set dimension, described in treat that correction contact hole graph 201a is positioned at compact district.
In another embodiment, please refer to Fig. 6, describedly wait that revising the both sides of contact hole graph 201a has interconnection line figure respectively, and described in wait that the first distance H1 revising contact hole graph both sides is all less than the first pre-set dimension, described in treat that correction contact hole graph 201a is positioned at compact district.
In other embodiments, described in wait that revising contact hole graph only has interconnection line figure in side, and described in wait that the first distance revised between contact hole graph and this interconnection line figure is less than the first pre-set dimension, described in wait that revising contact hole graph 201a is positioned at compact district.
Perform S13, when described in time revising contact hole graph 201a and be positioned at isolated region, wait that revising contact hole graph 201a carries out the first graphic change to described, described in making, treat that first length of side L1 of correction contact hole graph 201a and the second length of side L2 increases, form contact hole graph 201b, as shown in Figure 7.
When described in time revising contact hole graph 201a and be positioned at isolated region, to wait that the conductive plunger revising contact hole graph 201a formation is larger to the spacing of adjacent conductive structure, described conductive plunger not easily and dielectric breakdown phenomenon occurs between adjacent conductive structure, therefore, it is possible to treat described in allowing that first length of side L1 of correction contact hole graph 201a and the second length of side L2 all increases, to strengthen the electromobility of the conductive plunger formed, to wait that the conductive plunger performance revising contact hole graph 201a formation is improved.
And, when wait revise contact hole graph 201a larger to the distance of adjacent contact hole pattern 202, described first length of side L1 and the second length of side L2 increase more.
Concrete, when being positioned at isolated region until correction contact hole graph 201a described in determining, waiting described in test to revise the distance of contact hole graph 201a to adjacent contact hole pattern 202, obtaining second distance H2(as shown in Figure 6); When described second distance H2 is less than the second pre-set dimension, described in wait that revising first length of side L1 of contact hole graph 201a and the second length of side L2 all changes to first size; When described second distance H2 is greater than the second pre-set dimension, described in wait that revising first length of side L1 of contact hole graph 201a and the second length of side L2 all changes to the second size, described second size is greater than first size.In the present embodiment, described first size is 3 nanometer ~ 5 nanometers, and described second is of a size of 8 nanometer ~ 10 nanometers.
It should be noted that, after carrying out the first graphic change, the figure after to change is needed to carry out optical approach effect detection, determine after the figure after changing exposes, exposing patterns clearly can be obtained, further, if the dim design after the graph exposure after change, then the increase of described first length of side L1 and the second length of side L2 is reduced.
Perform S14, when described in time revising contact hole graph 201a and be positioned at compact district, wait that revising contact hole graph 201a carries out second graph change to described, wait described in making that the second length of side L2 revising contact hole graph 201a increases, and the first length of side L1 is less than the second length of side L2, form contact hole graph 201b, as shown in Figure 8.
In the present embodiment, when described in time revising contact hole graph 201a and be positioned at compact district, wait that revising contact hole graph 201a carries out design rule detection to described; And described in changing according to the result that described design rule detects, wait to revise first length of side L1 of contact hole graph 201a.
When described in time revising contact hole graph 201a and be positioned at compact district, to wait that the conductive plunger revising contact hole graph 201a formation is less to the spacing of adjacent conductive structure, dielectric breakdown phenomenon is there is between the conductive structure that described conductive plunger is easy and adjacent, therefore only can by increase second length of side L2 to improve the conductive plunger electromobility formed.Simultaneously, for the change waiting the first length of side L1 revising contact hole graph 201a, (DRC is detected based on design rule, Design Rule Checking) result determine, need to determine to increase or reduce first length of side, to guarantee dielectric breakdown to occur between formed conductive plunger and adjacent conductive structures according to design rule.Thus can ensure that the figure after second graph change can the conductive plunger of forming property good stable or interconnection line.
Described design rule detection can be used in judgement and treats whether correction pattern 201a optical approach effect can occur, if wait that revising contact hole graph 201a violates design rule detection, then illustrate with the described dim design waiting to revise contact hole 201a exposure formation, then treat described in that first length of side L1 of correction contact hole graph 201a and the second length of side L2 can not be reduced.
In the present embodiment, described design rule detects and comprises: wait described in test to revise contact hole graph 201a the first length of side L1 and described in wait to revise the distance between contact hole graph 201a to adjacent interconnection line graph 202.
When described in time revising contact hole graph 201a and interconnection line figure 202 meets design rule, as shown in Figure 9, change the flow process waiting to revise contact hole graph 201a first length of side L1, comprising:
Step S101, when described in time revising contact hole graph 201a and interconnection line figure 202 meets design rule, wait described in test to revise the distance of contact hole graph 201a to adjacent contact hole pattern 202, obtains second distance H2.
Step S102, when described second distance H2 is less than the second pre-set dimension, waits described in making that the first length of side L1 revising contact hole graph 201a reduces.
Step S103, when described second distance H2 is greater than the second pre-set dimension, waits described in making that the first length of side L1 revising contact hole graph 201a increases.
When described second distance H2 is less than or equal to the second pre-set dimension, described second distance H2 is less, described in wait revise contact hole graph 201a first length of side L1 reduce size larger.
In the present embodiment, described second pre-set dimension is 500 dust ~ 700 dusts.When described second distance H2 is in first size interval range, and when described first size interval is less than the second pre-set dimension, described first length of side L1 reduces to be of a size of a; When described second distance H2 is in the second size interval range, first size interval is greater than between described second size field, and when being less than the second pre-set dimension between described second size field, described first length of side L1 reduces to be of a size of b, and described size b is less than size a, such as, described size a is 5 nanometers, and described size b is 3 nanometers.
Accordingly, when described second distance H2 is greater than the second pre-set dimension, described second distance H2 is larger, described in wait revise contact hole graph 201a first length of side L1 increase size larger.
On the other hand, when described in time revising contact hole graph 201a and violate design rule, wait described in making that the first length of side L1 revising contact hole graph 201a increases, and the size that described first length of side L1 increases is less than the size that the second length of side L2 increases.
When described in time revising contact hole graph 201a and interconnection line figure 202 violates design rule, as shown in Figure 10, change the flow process waiting to revise contact hole graph 201a first length of side L1, comprising:
Step S201, when described in time revising contact hole graph 201a and interconnection line figure 202 violates design rule, wait described in test to revise the distance of contact hole graph 201a to adjacent contact hole pattern 201, obtains second distance H2.
Step S202, when described second distance H2 is less than the second pre-set dimension, waits described in making that the first length of side L1 revising contact hole graph 201a increases to the 3rd size.
Step S203, when described second distance H2 is greater than the second pre-set dimension, wait described in making that the first length of side L1 revising contact hole graph 201a increases to the 4th size, described 3rd size is less than the 4th size.
When described second distance H2 is larger, described in wait revise contact hole graph 201a first length of side L1 increase size larger.
It should be noted that, no matter, wait that revising contact hole graph 201a meets or violate design rule, when the described both sides until correction contact hole graph 201a are all less than the first pre-set dimension to the first distance H1 of adjacent interconnection line graph 202, as shown in Figure 6.Describedly treat that correction pattern 201a both sides all easily dielectric breakdown phenomenon occur, describedly wait that revising first length of side L1 of contact hole graph 201a changes to first size, and, the described border, both sides, identical to the distance of described interconnection line figure 202 boundary direction indentation of waiting to revise contact hole graph 201a and being parallel to interconnection line figure 202, the axis of the contact hole graph 201b after second graph change still overlaps with the axis of interconnection line figure 202.
In another embodiment, treat that the first side A of correction contact hole graph 201a is less than the first pre-set dimension to the first distance H1 of adjacent interconnection line graph 202 when described, when the first distance H1 of described the second side B to adjacent interconnection line graph 202 wait revising contact hole graph 201a is greater than the first pre-set dimension, as shown in Figure 5, described the first side A waiting to revise contact hole graph 201a, compared with the second side B, dielectric more easily occurs to be exposed, therefore, describedly wait that revising first length of side L1 of contact hole graph 201a changes to the second size, described second size is greater than first size, and, described first A border, side is larger to the distance of the direction indentation on interconnection line figure 202 border, and the second B border, side is less to the distance of interconnection line figure 202 boundary direction indentation, the axis of revised contact hole graph 201b, do not overlap with the axis of interconnection line figure 202.
It should be noted that, revised contact hole graph 201b needs to meet design rule, and revised contact hole graph 201b is when meeting design rule, again can carry out the above-mentioned figure correction of figure.
Please refer to Figure 11, Figure 11 is after revising initial graphics with the figure modification method described in the embodiment of the present invention, the voltage breakdown between the contact hole formed with revised figure and puncture proportionate relationship figure.
Wherein, straight line A1 and straight line A2 represents: after the figure modification method correction pattern of Fig. 1 to Fig. 2, form twice conductive structure using revised figure as mask pattern after, voltage breakdown and the linear relationship puncturing ratio of the conductive structure formed.Straight line B1 and straight line B2 represents, with the figure modification method correction initial graphics 200 of the embodiment of the present invention, and after forming twice conductive structure with revised figure, and voltage breakdown and the linear relationship puncturing ratio of described conductive structure.As shown in Figure 11, after the figure modification method correction initial graphics 200 of the present embodiment, the conductive structure voltage breakdown formed with revised figure improves, and the difficulty that namely dielectric breakdown occurs between adjacent conductive structures increases, therefore, the performance improvement of the conductive structure formed.
In the present embodiment, wait that revising contact hole pattern is positioned at isolated region when described, wait to revise the contact hole that contact hole pattern formed not easily and between adjacent interconnection line or contact hole dielectric breakdown occurs with described, therefore, it is possible to wait first length of side and second length of side of revising contact hole graph described in increasing simultaneously, wait described in making that the area revising contact hole graph increases, to wait the electromobility revising the conductive plunger that contact hole pattern is formed described in improving.When described in time revising contact hole pattern and be positioned at compact district, dielectric breakdown is there is between the interconnection line easy and adjacent with the described contact hole treating that correction contact hole pattern is formed or contact hole, therefore second length of side of contact hole graph is waited to revise described in only increasing, increase as required simultaneously or reduce first length of side, while waiting described in guarantee that revising contact hole pattern is not easy to adjacent interconnection line or contact hole generation dielectric breakdown, wait described in avoiding that the area revising contact hole graph is reduced, therefore, it is possible to while preventing dielectric breakdown, ensure that the electromobility waiting to revise the conductive plunger that contact hole pattern is formed.Therefore, the performance of the contact hole formed with revised figure improves.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (16)
1. a figure modification method, is characterized in that, comprising:
Initial graphics is provided, described initial graphics comprises some contact hole graph and some interconnection line figures, described contact hole graph and interconnection line graphics overlay, described contact hole graph is rectangle, described contact hole graph is first length of side perpendicular to the length of side of interconnection line figure, and the length of side being parallel to interconnection line figure is second length of side;
Wait described in judgement that revising contact hole graph is positioned at compact district or isolated region;
When described in time revising contact hole graph and be positioned at isolated region, wait that revising contact hole graph carries out the first graphic change to described, described in making, wait first length of side and the increase of second length of side of revising contact hole graph;
When described in time revising contact hole graph and be positioned at compact district, wait that revising contact hole graph carries out second graph change to described, wait described in making that second length of side revising contact hole graph increases, and first length of side is less than second length of side.
2. figure modification method as claimed in claim 1, is characterized in that, also comprise: when described in time revising contact hole graph and be positioned at compact district, waits that revising contact hole graph carries out design rule detection to described; And described in changing according to the result that described design rule detects, wait to revise first length of side of contact hole graph.
3. figure modification method as claimed in claim 2, is characterized in that, described design rule detects and comprises: wait described in test to revise contact hole graph first length of side and described in wait to revise the distance between contact hole graph to adjacent interconnection line graph.
4. figure modification method as claimed in claim 2, is characterized in that, when described in time revising contact hole graph and interconnection line figure meets design rule, wait to revise the distance of contact hole graph to adjacent contact hole pattern, obtain second distance described in test; When described second distance is less than the second pre-set dimension, described in making, wait that first length of side revising contact hole graph reduces; When described second distance is greater than the second pre-set dimension, described in making, wait that first length of side revising contact hole graph increases.
5. figure modification method as claimed in claim 4, it is characterized in that, when described second distance is less than or equal to the second pre-set dimension, described second distance is less, described in wait to revise contact hole graph the size that reduces of first length of side larger.
6. figure modification method as claimed in claim 4, it is characterized in that, when described second distance is greater than the second pre-set dimension, described second distance is larger, described in wait that the size of the first length of side increase revising contact hole graph is larger.
7. figure modification method as claimed in claim 4, it is characterized in that, described second pre-set dimension is 500 dust ~ 700 dusts.
8. figure modification method as claimed in claim 2, it is characterized in that, when described in time revising contact hole graph and violate design rule, wait described in making that first length of side revising contact hole graph increases, and the size that described first length of side increases is less than the size that second length of side increases.
9. figure modification method as claimed in claim 8, is characterized in that, also comprise: wait described in test to revise the distance of contact hole graph to adjacent contact hole pattern, obtain second distance; When described second distance is larger, described in wait revise contact hole graph first the length of side increase size larger.
10. figure modification method as claimed in claim 1, it is characterized in that, treat described in determining that correction contact hole graph is positioned at compact district or the method for isolated region comprises: wait described in test to revise contact hole graph to the distance of adjacent interconnection line graph, obtain the first distance; When described first distance is greater than the first pre-set dimension, described in wait revise contact hole graph be positioned at isolated region; When described first distance is less than the first pre-set dimension, described in wait revise contact hole graph be positioned at compact district.
11. figure modification methods as claimed in claim 10, is characterized in that, described in wait that revising the both sides of contact hole graph has interconnection line figure respectively.
12. figure modification methods as claimed in claim 11, it is characterized in that, when the first distance of described both sides to adjacent interconnection line graph wait revising contact hole graph is all less than the first pre-set dimension, described in treat first length of side of correction contact hole graph change to first size; Treat that the first side of correction contact hole graph is less than the first pre-set dimension to the first distance of adjacent interconnection line graph when described, when first distance of described the second side to adjacent interconnection line graph wait revising contact hole graph is greater than the first pre-set dimension, described wait revise contact hole graph first length of side change to the second size, described second size is greater than first size.
13. figure modification methods as claimed in claim 1, it is characterized in that, treat described in determining that correction contact hole graph is positioned at compact district or the method for isolated region comprises: wait described in test to revise the distance of contact hole graph to adjacent contact hole pattern, obtain second distance; When described second distance is greater than the first pre-set dimension, described in wait revise contact hole graph be positioned at isolated region; When described second distance is less than the first pre-set dimension, described in wait revise contact hole graph be positioned at compact district.
14. figure modification methods as described in claim 10 or 13, it is characterized in that, described first pre-set dimension is greater than 1000 dusts.
15. figure modification methods as claimed in claim 1, is characterized in that, in described initial graphics, first length of side of described contact hole graph is 60 nanometer ~ 70 nanometers, and second length of side of described contact hole graph is 60 nanometer ~ 70 nanometers.
16. figure modification methods as claimed in claim 1, it is characterized in that, some interconnection line figures are arranged in parallel.
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