CN104977735B - Method for integrating polymer electro-optical chip and microwave matching load circuit - Google Patents
Method for integrating polymer electro-optical chip and microwave matching load circuit Download PDFInfo
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- 229920000642 polymer Polymers 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000005540 biological transmission Effects 0.000 claims abstract description 71
- 230000003287 optical effect Effects 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims 3
- 230000005611 electricity Effects 0.000 claims 2
- 230000010354 integration Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
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- 238000002360 preparation method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000382 optic material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/061—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on electro-optical organic material
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Abstract
Description
技术领域technical field
本发明属于微波电路匹配负载技术领域，具体涉及一种聚合物电光芯片与微波匹配负载电路集成的方法。The invention belongs to the technical field of microwave circuit matching load, and in particular relates to a method for integrating a polymer electro-optical chip and a microwave matching load circuit.
背景技术Background technique
随着微波光子技术的快速发展，电光调制器、电光开关、光移相器、光模数转换器等电光器件得到了广泛的研究和应用。微波匹配负载电路是微波光子系统中不可缺少的重要部件，直接关系着系统的稳定性和微波源的安全。例如在微波光子系统中使用电光调制器时，没有微波匹配负载电路将使微波不能够有效传递到电光作用区，由此会严重影响电光转换的效率，使微波光子系统无法正常工作。因此，在微波光子系统中必须有一个合适的微波匹配负载电路，将多余的微波吸收掉，保证系统的安全正常工作。With the rapid development of microwave photonic technology, electro-optic devices such as electro-optic modulators, electro-optic switches, optical phase shifters, and optical analog-to-digital converters have been widely studied and applied. The microwave matching load circuit is an indispensable and important component in the microwave photonic system, which is directly related to the stability of the system and the safety of the microwave source. For example, when an electro-optic modulator is used in a microwave photonic system, without a microwave matching load circuit, the microwave cannot be effectively transmitted to the electro-optic action area, which will seriously affect the efficiency of electro-optic conversion and make the microwave photonic system unable to work normally. Therefore, there must be a suitable microwave matching load circuit in the microwave photonic system to absorb the excess microwave and ensure the safe and normal operation of the system.
目前，在传统的微波光子系统中实现微波匹配负载电路的方式有三种：1.通过在微波传输电路的输出端外接微波匹配负载电路的方式将多余的微波能量消耗掉，但需要额外的接头和匹配负载器，由此增加了微波光子系统的成本、体积和复杂性。并且微波传输电路的输出端接头的装配工艺也会影响微波传输电路的输入端的微波反射系数，在一些对微波反射系数要求严格的微波光子系统中，会带来额外的困难。2.使用单独制作的微波匹配负载电路，并用金丝压焊等技术将单独制作的微波匹配负载电路与电光芯片的微波传输电路的输出端连接，但这种方式需要额外的装配步骤，而且需要将电光芯片的微波传输电路引出到电光芯片的边缘，增加了设计的难度。3.在电光芯片上使用溅射和光刻的工艺在微波传输电路的输出端制作一层薄膜电阻将多余的微波能量消耗掉，增加了工艺复杂度和难度。对于聚合物电光芯片，由于聚合物电光材料对工艺耐受性差，这种方式的实现难度更大。由于微波光子技术在安全性和可靠性上的要求越来越高，当前急需一种结构紧凑、体积小、重量轻、可靠性高的微波匹配负载电路。At present, there are three ways to realize the microwave matching load circuit in the traditional microwave photonic system: 1. The excess microwave energy is consumed by externally connecting the microwave matching load circuit at the output end of the microwave transmission circuit, but additional connectors and Match the load, thereby increasing the cost, size and complexity of the microwave photonics system. Moreover, the assembly process of the connector at the output end of the microwave transmission circuit will also affect the microwave reflection coefficient of the input end of the microwave transmission circuit, which will bring additional difficulties in some microwave photonic systems that have strict requirements on the microwave reflection coefficient. 2. Use a separately produced microwave matching load circuit, and connect the separately produced microwave matching load circuit with the output end of the microwave transmission circuit of the electro-optic chip by gold wire pressure welding and other techniques, but this method requires additional assembly steps and requires Leading the microwave transmission circuit of the electro-optic chip to the edge of the electro-optic chip increases the difficulty of design. 3. Use sputtering and photolithography on the electro-optical chip to make a layer of thin-film resistors at the output end of the microwave transmission circuit to consume excess microwave energy, which increases the complexity and difficulty of the process. For polymer electro-optic chips, it is more difficult to realize this method due to the poor tolerance of polymer electro-optic materials to the process. Due to the increasing requirements of microwave photonic technology on safety and reliability, there is an urgent need for a microwave matching load circuit with compact structure, small size, light weight and high reliability.
发明内容Contents of the invention
本发明的目的是针对传统的微波光子系统中实现微波匹配负载电路的方式所存在的缺陷，从而提供一种聚合物电光芯片与微波匹配负载电路集成的方法。The purpose of the present invention is to provide a method for integrating a polymer electro-optical chip and a microwave matching load circuit to address the defects in the way of realizing microwave matching load circuits in traditional microwave photonic systems.
本发明的聚合物电光芯片与微波匹配负载电路集成的方法是：在聚合物电光芯片中的微波传输电路中的电光作用区之后增加一段具有微波匹配负载功能的与所述的电光作用区中的微波传输电路的尺寸相同或尺寸相近似的延长的微波传输电路，使通过所述的延长的微波传输电路中的微波信号消耗掉，实现聚合物电光芯片与微波匹配负载电路的集成。The method for integrating the polymer electro-optical chip and the microwave matching load circuit of the present invention is: after the electro-optic action area in the microwave transmission circuit in the polymer electro-optic chip, add a section with microwave matching load function and the electro-optic action area in the described electro-optic area The extended microwave transmission circuit with the same size or similar size consumes the microwave signal passing through the extended microwave transmission circuit, and realizes the integration of the polymer electro-optic chip and the microwave matching load circuit.
所述的尺寸相近似是指所述的延长的微波传输电路的尺寸与电光作用区中的微波传输电路的尺寸的差值在±20%以内。The similar size means that the difference between the size of the extended microwave transmission circuit and the size of the microwave transmission circuit in the electro-optical active area is within ±20%.
所述的使通过所述的延长的微波传输电路中的微波信号消耗掉，是指延长的微波传输电路能将由电光作用区中传输出来的微波信号衰减5dB以上。Said to consume the microwave signal passing through the extended microwave transmission circuit means that the extended microwave transmission circuit can attenuate the microwave signal transmitted from the electro-optical action area by more than 5dB.
所述的微波信号衰减是5dB～20dB。The microwave signal attenuation is 5dB-20dB.
本发明的聚合物电光芯片与微波匹配负载电路集成的方法不但适用于微波传输电路是使用微带电极结构的聚合物电光调制器芯片，也适用于微波传输电路是使用共面等其它电极结构的聚合物电光调制器芯片。The method for integrating the polymer electro-optical chip and the microwave matching load circuit of the present invention is not only applicable to the polymer electro-optic modulator chip using the microstrip electrode structure in the microwave transmission circuit, but also applicable to the microwave transmission circuit using other electrode structures such as coplanar Polymer electro-optic modulator chip.
本发明的聚合物电光芯片与微波匹配负载电路集成的方法，仅需在制作聚合物电光芯片中的微波传输电路的光刻掩模版时，将光刻掩模版图形中的微波传输电路通过电光作用区之后连接的匹配负载电路部分的图形替换成所述的延长的微波传输电路的图形即可，不需其它额外的制作或安装步骤。具有可靠性高、使用寿命长，以及结构紧凑、体积小、重量轻、适应高真空环境等特点。The method for integrating the polymer electro-optical chip and the microwave matching load circuit of the present invention only needs to pass the microwave transmission circuit in the photo-etching mask pattern through electro-optic action when making the photolithography mask plate of the microwave transmission circuit in the polymer electro-optic chip. The pattern of the matching load circuit connected after the zone can be replaced with the pattern of the extended microwave transmission circuit without any additional manufacturing or installation steps. It has the characteristics of high reliability, long service life, compact structure, small volume, light weight, and adaptability to high vacuum environment.
附图说明Description of drawings
图1.本发明中的微波传输电路是使用微带电极结构的集成微波匹配负载电路的聚合物电光调制器芯片的结构示意图。Fig. 1. The microwave transmission circuit among the present invention is the structural representation of the polymer electro-optic modulator chip of the integrated microwave matching load circuit using the microstrip electrode structure.
图2.是图1中A-A截面的示意图。Fig. 2 is a schematic diagram of the section A-A in Fig. 1 .
图3.本发明实施例1的微波信号输入端口S11参数的测试结果。Fig. 3. Test results of parameters of microwave signal input port S11 in Embodiment 1 of the present invention.
图4.本发明实施例2的微波信号输入端口S11参数的测试结果。Fig. 4. Test results of parameters of microwave signal input port S11 in Embodiment 2 of the present invention.
附图标记reference sign
1.微波信号的输入端口1. Microwave signal input port
2.实现共面电极-微带电极转换功能的过渡段2. Realize the transition section of coplanar electrode-microstrip electrode conversion function
3.电光作用区中的微波传输电路（微带电极结构）3. Microwave transmission circuit in the electro-optic action zone (microstrip electrode structure)
4.延长的微波传输电路4. Extended microwave transmission circuit
5.光波导的输入端口5. Input port of optical waveguide
6.光波导的输出端口6. The output port of the optical waveguide
7.基底7. Substrate
8.微带电极结构的微波传输电路的地电极8. Ground electrode of microwave transmission circuit with microstrip electrode structure
9.聚合物光波导层9. Polymer optical waveguide layer
10.光波导10. Optical waveguide
11.电光作用区中的微带电极结构的微波传输电路的信号电极11. Signal electrode of microwave transmission circuit with microstrip electrode structure in the electro-optic active region
12.延长的微波传输电路的信号电极12. Signal electrodes for extended microwave transmission circuits
13.电光作用区中的微带电极结构的微波传输电路的信号电极宽度13. The signal electrode width of the microwave transmission circuit of the microstrip electrode structure in the electro-optic active region
14.延长的微波传输电路的信号电极宽度14. Extended signal electrode width of microwave transmission circuit
下面结合附图对本发明做进一步说明。The present invention will be further described below in conjunction with the accompanying drawings.
具体实施方式Detailed ways
实施例1Example 1
如图1和图2所示，其典型的微波传输电路是使用微带电极结构的集成微波匹配负载电路的聚合物电光调制器芯片（所述的聚合物电光调制器芯片可为本领域中所用的任何聚合物电光调制器芯片），包括微波信号输入端口1、实现共面电极-微带电极转换功能的过渡段2、电光作用区中的微波传输电路3、延长的微波传输电路4、基底7（原聚合物电光调制器芯片的基底）、微带电极结构的微波传输电路的地电极8和聚合物光波导层9。As shown in Fig. 1 and Fig. 2, its typical microwave transmission circuit is the polymer electro-optic modulator chip (the polymer electro-optic modulator chip of described polymer electro-optic modulator chip can be used in the art using the integrated microwave matching load circuit of microstrip electrode structure Any polymer electro-optic modulator chip), including microwave signal input port 1, transition section 2 for realizing coplanar electrode-microstrip electrode conversion function, microwave transmission circuit 3 in the electro-optic active area, extended microwave transmission circuit 4, substrate 7 (the base of the original polymer electro-optic modulator chip), the ground electrode 8 and the polymer optical waveguide layer 9 of the microwave transmission circuit of the microstrip electrode structure.
如图1所示，当微波信号通过微波信号输入端口1进入聚合物电光芯片上，经过实现共面电极-微带电极转换功能的过渡段2后，沿着微波传输电路通过电光作用区中的微波传输电路3之后，再通过10cm长的一段与电光作用区中的微波传输电路尺寸相同的延长的微波传输电路4部分，微波信号在该段延长的微波传输电路部分的微波损耗在工作频段10GHz～30GHz达到10dB以上，在微波信号输入端口的S11参数低于-20dB，实现了聚合物电光芯片与微波匹配负载的功能。As shown in Figure 1, when the microwave signal enters the polymer electro-optic chip through the microwave signal input port 1, after passing through the transition section 2 that realizes the conversion function of the coplanar electrode-microstrip electrode, it passes through the electro-optic active area along the microwave transmission circuit. After the microwave transmission circuit 3, it passes through a 10cm-long section of the extended microwave transmission circuit 4 that is the same size as the microwave transmission circuit in the electro-optic area. ~30GHz reaches more than 10dB, and the S 11 parameter at the microwave signal input port is lower than -20dB, realizing the function of polymer electro-optical chip and microwave matching load.
对上述制作的样品，测试了微波信号输入端口的S11参数，典型的测试结果见图3，很好的实现了聚合物电光芯片与微波匹配负载的功能。For the samples made above, the S 11 parameter of the microwave signal input port was tested. The typical test results are shown in Figure 3, and the function of the polymer electro-optic chip and the microwave matching load is well realized.
微波传输电路是使用微带电极结构的集成微波匹配负载电路的聚合物电光调制器芯片的制备步骤为：将基底7清洗干净、使用微带电极结构的集成波匹配负载电路的聚合物电光调制器芯片的地电极模板制作微带电极结构的微波传输电路的地电极8、制作包含光波导10的聚合物光波导层9、使用微带电极结构的集成波匹配负载电路的聚合物电光调制器芯片的信号电极模板制作电光作用区中的微带电极结构的微波传输电路的信号电极11。在制作地电极和信号电极的光刻掩模版时，将微波传输电路通过电光作用区之后接匹配负载部分替换成与电光作用区中的微波传输电路的尺寸相同、传输方向上延长的微波传输电路4即可，仅仅需要在绘制光刻版图形时加以改变，聚合物电光芯片的制备过程与未集成微波匹配负载电路的聚合物电光芯片的制备步骤完全相同。The microwave transmission circuit is a polymer electro-optic modulator chip with integrated microwave matching load circuit using a microstrip electrode structure. The ground electrode template of the chip makes the ground electrode 8 of the microwave transmission circuit of the microstrip electrode structure, makes the polymer optical waveguide layer 9 including the optical waveguide 10, and uses the polymer electro-optic modulator chip of the integrated wave matching load circuit of the microstrip electrode structure The signal electrode template is used to make the signal electrode 11 of the microwave transmission circuit of the microstrip electrode structure in the electro-optic active area. When making the photolithography mask of the ground electrode and the signal electrode, the microwave transmission circuit passes through the electro-optic active area and then the matching load part is replaced with a microwave transmission circuit with the same size as the microwave transmission circuit in the electro-optic active area and extended in the transmission direction 4, only needs to be changed when drawing the pattern of the photolithography plate, the preparation process of the polymer electro-optic chip is exactly the same as that of the polymer electro-optic chip without integrated microwave matching load circuit.
实施例2Example 2
如图1和图2所示，其典型的微波传输电路是使用微带电极结构的集成微波匹配负载电路的聚合物电光调制器芯片（所述的聚合物电光调制器芯片可为本领域中所用的任何聚合物电光调制器芯片），包括微波信号输入端口1、实现共面电极-微带电极转换功能的过渡段2、电光作用区中的微波传输电路3、延长的微波传输电路4、基底7（原聚合物电光调制器芯片的基底）、微带电极结构的微波传输电路的地电极8和聚合物光波导层9。As shown in Fig. 1 and Fig. 2, its typical microwave transmission circuit is the polymer electro-optic modulator chip (the polymer electro-optic modulator chip of described polymer electro-optic modulator chip can be used in the art using the integrated microwave matching load circuit of microstrip electrode structure Any polymer electro-optic modulator chip), including microwave signal input port 1, transition section 2 for realizing coplanar electrode-microstrip electrode conversion function, microwave transmission circuit 3 in the electro-optic active area, extended microwave transmission circuit 4, substrate 7 (the base of the original polymer electro-optic modulator chip), the ground electrode 8 and the polymer optical waveguide layer 9 of the microwave transmission circuit of the microstrip electrode structure.
如图1所示，当微波信号通过微波信号输入端口1进入聚合物电光芯片上，经过实现共面电极-微带电极转换功能的过渡段2后，沿着微波传输电路通过电光作用区中的微波传输电路3之后，再通过12cm长的一段与电光作用区中的微波传输电路尺寸相同的延长的微波传输电路4部分，微波信号在该段延长的微波传输电路部分的微波损耗在工作频段10GHz～30GHz达到10dB以上，在微波信号输入端口的S11参数低于-20dB，实现了聚合物电光芯片与微波匹配负载的功能。As shown in Figure 1, when the microwave signal enters the polymer electro-optic chip through the microwave signal input port 1, after passing through the transition section 2 that realizes the conversion function of the coplanar electrode-microstrip electrode, it passes through the electro-optic active area along the microwave transmission circuit. After the microwave transmission circuit 3, it passes through a 12cm-long section of the extended microwave transmission circuit 4 that is the same size as the microwave transmission circuit in the electro-optic area. ~30GHz reaches more than 10dB, and the S 11 parameter at the microwave signal input port is lower than -20dB, realizing the function of polymer electro-optical chip and microwave matching load.
对上述制作的样品，测试了微波信号输入端口的S11参数，典型的测试结果见图4，很好的实现了聚合物电光芯片与微波匹配负载的功能。For the samples made above, the S 11 parameter of the input port of the microwave signal was tested. The typical test results are shown in Figure 4, and the function of the polymer electro-optic chip and the microwave matching load is well realized.
微波传输电路是使用微带电极结构的集成微波匹配负载电路的聚合物电光调制器芯片的制备步骤为：将基底7清洗干净、使用微带电极结构的集成波匹配负载电路的聚合物电光调制器芯片的地电极模板制作微带电极结构的微波传输电路的地电极8、制作包含光波导10的聚合物光波导层9、使用微带电极结构的集成波匹配负载电路的聚合物电光调制器芯片的信号电极模板制作电光作用区中的微带电极结构的微波传输电路的信号电极11。在制作地电极和信号电极的光刻掩模版时，将微波传输电路通过电光作用区之后接匹配负载部分替换成与电光作用区中的微波传输电路的尺寸相近、传输方向上延长的微波传输电路4即可，所述的尺寸相近是指延长的微波传输电路的信号电极12的延长的微波传输电路的信号电极宽度14仅仅比电光作用区中的微带电极结构的微波传输电路的信号电极宽度13增加了10%，其它尺寸都相同。仅仅需要在绘制光刻版图形时加以改变，聚合物电光芯片的制备过程与未集成微波匹配负载电路的聚合物电光芯片的制备步骤完全相同。The microwave transmission circuit is a polymer electro-optic modulator chip with integrated microwave matching load circuit using a microstrip electrode structure. The ground electrode template of the chip makes the ground electrode 8 of the microwave transmission circuit of the microstrip electrode structure, makes the polymer optical waveguide layer 9 including the optical waveguide 10, and uses the polymer electro-optic modulator chip of the integrated wave matching load circuit of the microstrip electrode structure The signal electrode template is used to make the signal electrode 11 of the microwave transmission circuit of the microstrip electrode structure in the electro-optic active area. When making the photolithographic mask of the ground electrode and the signal electrode, the microwave transmission circuit is replaced by a microwave transmission circuit that is similar in size to the microwave transmission circuit in the electro-optic action area and extended in the transmission direction 4, the similar size means that the signal electrode width 14 of the signal electrode 12 of the extended microwave transmission circuit is only smaller than the signal electrode width of the microwave transmission circuit of the microstrip electrode structure in the electro-optical active region 13 increased by 10%, all other dimensions are the same. It only needs to be changed when drawing the pattern of the photolithography plate, and the preparation process of the polymer electro-optic chip is exactly the same as that of the polymer electro-optic chip without integrated microwave matching load circuit.
以上实施例，并非对本发明做任何形式上的限制，凡是依据本发明的技术，对以上实施例所做的任何简单修改、等同变化和修饰，均仍属于本发明的范围内。The above embodiments do not limit the present invention in any form. Any simple modifications, equivalent changes and modifications made to the above embodiments according to the technology of the present invention still fall within the scope of the present invention.
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