CN104966882B - A kind of sapphire microwave cavity - Google Patents
A kind of sapphire microwave cavity Download PDFInfo
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- CN104966882B CN104966882B CN201510357836.1A CN201510357836A CN104966882B CN 104966882 B CN104966882 B CN 104966882B CN 201510357836 A CN201510357836 A CN 201510357836A CN 104966882 B CN104966882 B CN 104966882B
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- metallic shield
- cavity
- annular
- sapphire crystal
- sapphire
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 44
- 239000010980 sapphire Substances 0.000 title claims abstract description 44
- 239000013078 crystal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 239000004411 aluminium Substances 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 230000005672 electromagnetic field Effects 0.000 abstract description 2
- 238000009510 drug design Methods 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The present invention discloses a kind of sapphire microwave cavity, the metal chamber lid and annular sapphire crystal that opening including the metallic shield cavity with opening and the metallic shield cavity matches, the annular sapphire crystal is fixedly installed on the inside that the wire chamber covers and is located at the metallic shield cavity, the metal chamber lid is fixedly installed in the opening of metallic shield cavity, and the metallic shield cavity is provided with input/output port.Metallic shield cavity is mainly used in shielding influence of the external electromagnetic field to microwave cavity frequency, can use the metals such as copper, aluminium.Annular sapphire crystal has extremely low loss tangent value in high band, and Whispering-gallery-mode can be produced by rational design.The pattern has high Q values, and due to the annular sapphire crystal material of use, some regular TE moulds and TM patterns are filtered out so that the microwave cavity has wide pattern spacing.Metal chamber lid is used for stationary annular sapphire crystal.
Description
Technical field
The present invention relates to a kind of microwave dielectric resonator.More particularly, to a kind of sapphire microwave cavity.
Background technology
Modern radar uses coherent receivers, and the technical capability of current most of radars still cannot be guaranteed reliably to detect small
Target, the especially target under ground and water surface background.It is reliable for specific radar under its defined condition of work
Ground determines the minimum resolution of the specular cross section of target, and what is played a decisive role is the phase noise performance of frequency source.
Most of modern radar utilizes phase or frequency information, rather than is only completed in a traditional way using amplitude information
The major function of system, though or do not utilize phase or frequency information directly, must be highly steady in frequency source phase or frequency
On the premise of fixed, its systemic-function could be completed.For example, moving-target indication radar utilizes Doppler effect in time domain from background
Echo signal is extracted in interference, now low phase noise can effectively control the strong signal in static ground clutter, extraction
The signal of slow moving targets.Doppler range rate measurement is to obtain velocity information using Doppler frequency shift, and pulse compression radar is then profit
Broadening waveform and compressed signal are obtained with the stable frequency dispersion characteristic of device or stable phase code characteristic.So, if
Radar frequency source itself there is higher phase noise, then noise will mutually mix with useful frequency or phase information
Confuse, so as to greatly reduce the actual performance of radar system.
Therefore, Low phase noise, the Microwave Frequency Source of high stability are widely used in the fields such as radar, communication metering.It is low
Warm sapphire Microwave Frequency Source utilizes the performance of sapphire material low-loss tangent, sapphire microwave cavity is operated in echo wall die
Under formula, obtaining high Q values, (4K is about 109, 300K is about 105).Frequency source based on this microwave cavity has extremely low phase
Position noise (in X-band,<- 160dBc/Hz@10kHz) and excellent short-term stability (<1E-15@1s).Low temperature is blue precious at present
The microwave cavity that stone microwave source uses is that copper shield chamber combines cylindrical sapphire crystal, but the microwave cavity has narrower pattern
Spacing, high requirement is proposed for the filter function of system.John G.Hartnett et al. are brilliant using cylindrical sapphire
The microwave cavity of body development obtains international highest q value (in 9GHz Frequency point) (Optimum Design of a at that time
High-Q Room-Temperature Whispering-Gallery-Mode X-band Sapphire Resonator,
IEEE Transaction on Ultrasonic,Ferroelectrics,and Frequency Control,vol 60,
No.6.2013)。
The content of the invention
There is wide pattern spacing the technical problem to be solved in the present invention is to provide a kind of, and have under same order Whispering-gallery-mode
There is the sapphire microwave cavity of high q-factor.
In order to solve the above technical problems, the present invention uses following technical proposals：
A kind of sapphire microwave cavity, including the metallic shield cavity with opening, with the metallic shield cavity
The metal chamber lid to match that is open and annular sapphire crystal, the annular sapphire crystal are fixedly installed on the metal chamber lid
Go up and be located at the inside of the metallic shield cavity, the metal chamber lid is fixedly installed in the opening of metallic shield cavity, institute
State metallic shield cavity and be provided with input/output port.Metallic shield cavity is mainly used in shielding external electromagnetic field to microwave cavity frequency
Influence, the metal such as copper, aluminium can be used.Annular sapphire crystal has extremely low loss tangent value in high band, by reasonable
It is designed to produce Whispering-gallery-mode.The pattern has high Q values, due to the annular sapphire crystal material of use, some
Regular TE moulds and TM patterns is filtered out so that the microwave cavity has wide pattern spacing.It is blue that metal chamber lid is used for stationary annular
Gem crystal.
Preferably, the leg that the bottom of the annular sapphire crystal is an integrally formed, the leg are embedded in wire chamber
In lid, the wire chamber is covered provided with the screw for being used to fasten the leg.
Preferably, the bottom interval of the annular sapphire crystal is evenly provided with four legs.
Preferably, the external diameter of the annular sapphire crystal is 30~35mm, and internal diameter is 10~25mm, the height of four legs
Degree is 10~15mm.
Preferably, the metallic shield cavity is cylinder, and the input/output port is symmetrically disposed in metallic shield
In the side wall of cavity.
Preferably, the height of the metallic shield cavity is 40~50mm, and internal diameter is 35~50mm, and wall thickness is 1~3mm.
Beneficial effects of the present invention are as follows：
The sapphire microwave cavity of the present invention just has the advantages of Q values are high, pattern spacing is big, can be widely applied for various
Need the occasion of high performance filter.
Brief description of the drawings
The embodiment of the present invention is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 shows the structural representation of the present invention.
Embodiment
In order to illustrate more clearly of the present invention, the present invention is done further with reference to preferred embodiments and drawings
It is bright.Similar part is indicated with identical reference in accompanying drawing.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
The present embodiment is solved, really by taking 9.2GHz in X-band as an example by HFSS simulation softwares or Maxwell equation
The annular sapphire crystal of low order Whispering-gallery-mode and the parameter of metallic shield cavity are operated in when being scheduled on 9.2GHz.Such as Fig. 1 institutes
Show, a kind of sapphire microwave cavity includes metallic shield cavity 1, metal chamber lid 2 and annular sapphire crystal 3, metallic shield
Cavity 1 is the hollow cylinder of bottom opening, and input/output port is symmetrically offered in the side wall of metallic shield cavity 1
11, the wall thickness range of metallic shield cavity 1 is 1~3mm, and altitude range is 40~50mm, and inside diameter ranges are 35~50mm.Metal
Chamber lid 2 matches with the opening of metallic shield cavity 1 and is fixedly connected by screw with metallic shield cavity 1.Annular sapphire
The external diametrical extent of crystal 3 is 30~35mm, and inside diameter ranges are 10~25mm, and the bottom of annular sapphire crystal 3 is provided with to downward
Integrally formed four leg 31 stretched, the height of leg 31 is 10~15mm.The top surface of metal chamber lid 2 is provided with and leg 31
Corresponding groove, leg 31 are inserted in groove and fixed by screw 21, and the annular sapphire crystal 3 after installation is outstanding
Vacant lot is located at the inside of metallic shield cavity 1.Coupling ring is installed at the input/output port 11 of metallic shield cavity 1, it is actual
The form of coupling ring or coupling probe can be installed as needed, input/output port 11 has reciprocity, that is, inputs and defeated
Going out to be exchanged, and the microwave cavity is not influenceed.After coupling ring installs, using Network Analyzer measure designed by Frequency point
Q values, and the area by adjusting coupling ring is deep at input/output port 11 distance and annular optimizes to Q values.
After measuring maximum, by coupling ring fixation and metallic shield cavity 1, then the sapphire microwave cavity can be operated set
The frequency of meter, and there is high Q values and pattern spacing.
After optimization, in 9.2GHz Frequency point, we obtain 2.9E5 loaded Q, and pattern spacing is more than
40MHz.And the high loaded Q of state's actual value of cylindrical sapphire crystal microwave cavity is 2.3 E5, Frequency point 9GHz, pattern spacing
About 20MHz.As can be seen here, sapphire microwave cavity of the invention has Q values height, pattern spacing wide a little.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not pair
The restriction of embodiments of the present invention, for those of ordinary skill in the field, may be used also on the basis of the above description
To make other changes in different forms, all embodiments can not be exhaustive here, it is every to belong to this hair
Row of the obvious changes or variations that bright technical scheme is extended out still in protection scope of the present invention.
Claims (5)
- A kind of 1. sapphire microwave cavity, it is characterised in that：Including the metallic shield cavity with opening and the metal screen Metal chamber lid and the annular sapphire crystal that the opening of cavity matches are covered, the annular sapphire crystal is fixedly installed on described Wire chamber covers and is located at the inside of the metallic shield cavity, and the metal chamber lid is fixedly installed on opening for metallic shield cavity On mouth, the metallic shield cavity is provided with input/output port, what the bottom of the annular sapphire crystal was an integrally formed Leg, the leg are embedded in metal chamber lid, and the wire chamber is covered provided with the screw for being used to fasten the leg.
- A kind of 2. sapphire microwave cavity according to claim 1, it is characterised in that：The annular sapphire crystal Bottom interval is evenly provided with four legs.
- A kind of 3. sapphire microwave cavity according to claim 2, it is characterised in that：The annular sapphire crystal External diameter is 30~35mm, and internal diameter is 10~25mm, and the height of four legs is 10~15mm.
- A kind of 4. sapphire microwave cavity according to claim 1, it is characterised in that：The metallic shield cavity is circle Cylindricality, the input/output port are symmetrically disposed in the side wall of metallic shield cavity.
- A kind of 5. sapphire microwave cavity according to claim 4, it is characterised in that：The height of the metallic shield cavity It is 35~50mm to spend for 40~50mm, internal diameter, and wall thickness is 1~3mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510357836.1A CN104966882B (en) | 2015-06-25 | 2015-06-25 | A kind of sapphire microwave cavity |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510357836.1A CN104966882B (en) | 2015-06-25 | 2015-06-25 | A kind of sapphire microwave cavity |
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| CN104966882A CN104966882A (en) | 2015-10-07 |
| CN104966882B true CN104966882B (en) | 2018-02-13 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107229213B (en) * | 2016-12-14 | 2019-12-06 | 北京无线电计量测试研究所 | Sapphire loading microwave cavity for small hydrogen atomic clock |
| CN110658226B (en) * | 2019-11-05 | 2024-04-19 | 国仪量子技术(合肥)股份有限公司 | Microwave resonant cavity and electron paramagnetic resonance probe using same |
| CN116345106B (en) * | 2023-03-14 | 2024-10-18 | 北京理工大学 | A dual-mode high-quality factor microwave dielectric resonant cavity device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101267191A (en) * | 2007-03-13 | 2008-09-17 | 广州埃信电信设备有限公司 | Cavity resonancer with temperature stabilization and compensation function |
| CN101718966A (en) * | 2009-10-30 | 2010-06-02 | 中国科学院上海天文台 | Active atomic clock of sapphire resonant cavity and method for fabricating resonant cavity |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1010423C2 (en) * | 1998-10-29 | 2000-05-03 | M & I Raadgevend Ingenieursbur | Separation device. |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101267191A (en) * | 2007-03-13 | 2008-09-17 | 广州埃信电信设备有限公司 | Cavity resonancer with temperature stabilization and compensation function |
| CN101718966A (en) * | 2009-10-30 | 2010-06-02 | 中国科学院上海天文台 | Active atomic clock of sapphire resonant cavity and method for fabricating resonant cavity |
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