CN104959161A - Method for preparing conjugated molecular hybridization semiconductor photocatalytic material by using mechanochemistry - Google Patents
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Abstract
本发明公开了一种机械化学制备共轭分子杂化半导体光催化材料的方法,属无机材料领域。该方法将含共轭大π键的分子及无机半导体纳米材料,按一定的质量比例混合均匀,在一定的球/料比下,加入到高能球磨的球磨罐中,在适当的球磨转速下,处理一定时间,得到共轭分子杂化的半导体光催化材料。本发明具有工艺流程简单,操作简便,不使用溶剂,后处理简单,制作成本低,制备得到的复合催化材料活性高,适合批量制备共轭分子杂化改性半导体光催化材料。
The invention discloses a method for mechanochemically preparing conjugated molecular hybrid semiconductor photocatalytic materials, which belongs to the field of inorganic materials. In this method, molecules containing conjugated large π bonds and inorganic semiconductor nanomaterials are uniformly mixed according to a certain mass ratio, and added to the ball milling tank of the high-energy ball mill at a certain ball/material ratio, and at an appropriate ball milling speed, After processing for a certain period of time, a semiconductor photocatalytic material hybridized with conjugated molecules is obtained. The invention has the advantages of simple process flow, easy operation, no solvent, simple post-treatment, low production cost, high activity of the prepared composite catalytic material, and is suitable for preparing conjugated molecular hybrid modified semiconductor photocatalytic materials in batches.
Description
技术领域 technical field
本发明涉及制备改性半导体光催化材料的方法,尤其涉及一种机械化学制备共轭分子杂 The invention relates to a method for preparing a modified semiconductor photocatalytic material, in particular to a mechanochemical preparation of a conjugated molecular hetero
化半导体光催化材料的新方法,属无机材料领域。 The invention discloses a new method for converting semiconductor photocatalytic materials, which belongs to the field of inorganic materials.
背景技术 Background technique
光催化材料的能效、活性和光腐蚀稳定性是制约其应用的关键,如何提高量子效率及可见光吸收仍然是目前光催化材料的核心问题。基于共轭分子表面杂化半导体促进光生载流子分离效应,表面杂化作用可以促进空穴的迁移,有效抑制光生电子与空穴的复合,提高光催化效率以及抑制光腐蚀的发生,是提高光催化性能的有效途径。 The energy efficiency, activity and photocorrosion stability of photocatalytic materials are the key to restrict their application. How to improve quantum efficiency and visible light absorption is still the core issue of photocatalytic materials. Based on the surface hybrid semiconductor of conjugated molecules to promote the separation effect of photogenerated carriers, surface hybridization can promote the migration of holes, effectively inhibit the recombination of photogenerated electrons and holes, improve the photocatalytic efficiency and inhibit the occurrence of photocorrosion, which is to improve Efficient pathways for photocatalytic performance.
半导体杂化改性处理一般是在液相体系中进行,其制备工艺条件多,使用溶剂多,后处理、分离过程较复杂,反应放大困难,不易规模生产等,且杂质难以完全去除,会对材料的催化活性及体系带来一定影响。因此,探索高效的杂化改性方法、简便的合成途径,十分必要。 Semiconductor hybrid modification treatment is generally carried out in a liquid phase system, which has many preparation process conditions, many solvents used, complicated post-treatment and separation processes, difficult reaction amplification, difficult scale production, etc., and it is difficult to completely remove impurities. The catalytic activity of the material and the system have a certain influence. Therefore, it is very necessary to explore efficient hybrid modification methods and simple synthetic routes.
机械化学一般指物质在机械力的诱发和作用下所发生的物理和化学的变化,具有操作简便、能耗低、无二次污染、产率高,易于规模生产等优点。运用机械化学制备共轭分子杂化改性半导体光催化材料,至今还没有发现类似的报道。 Mechanochemistry generally refers to the physical and chemical changes of substances under the induction and action of mechanical force. It has the advantages of simple operation, low energy consumption, no secondary pollution, high yield, and easy scale production. Using mechanochemistry to prepare conjugated molecular hybrid modified semiconductor photocatalytic materials, no similar reports have been found so far.
发明内容 Contents of the invention
针对目前液相法制备共轭分子杂化半导体光催化材料反应条件苛刻,工艺过程复杂,分离处理步骤繁琐,难以实现规模生产等。本发明目的在于提供一种简便的、低成本、可靠的制备杂化半导体光催化材料的方法,避免了溶剂的使用,后处理分离问题,产物产率高且能够量产。 For the preparation of conjugated molecular hybrid semiconductor photocatalytic materials by the current liquid phase method, the reaction conditions are harsh, the process is complicated, the separation and treatment steps are cumbersome, and it is difficult to achieve large-scale production. The purpose of the present invention is to provide a simple, low-cost, and reliable method for preparing hybrid semiconductor photocatalytic materials, which avoids the use of solvents, post-treatment separation problems, and has high product yields and can be mass-produced.
为实现本发明目的,技术方案如下: For realizing the object of the present invention, technical scheme is as follows:
1,将含共轭大π键的分子化合物和无机半导体纳米材料,按质量比混合研磨均匀,含共轭大π键的分子化合物质量分数占原料总质量的3%~5%; 1. Mix and grind molecular compounds containing conjugated large π bonds and inorganic semiconductor nanomaterials evenly according to the mass ratio, and the mass fraction of molecular compounds containing conjugated large π bonds accounts for 3% to 5% of the total mass of raw materials;
2,按球/料质量比10-20:1,将物料加入到球磨罐中,设置球磨转速、球磨时间,进行球磨处理。 2. According to the ball/material mass ratio of 10-20:1, put the material into the ball mill tank, set the ball mill speed and ball mill time, and carry out ball mill treatment.
3、取出球磨产物后,根据加入物料的情况,进行必要的后处理。 3. After taking out the ball milling product, carry out necessary post-processing according to the situation of the added materials.
所述含共轭大π键的分子化合物为氮化碳、石墨烯或聚苯胺等。 The molecular compound containing large conjugated π bonds is carbon nitride, graphene or polyaniline, etc.
所述无机半导体纳米材料为二氧化钛、氧化锌、铋系半导体、氧化铁、磷酸银等或其前驱物。 The inorganic semiconductor nanomaterials are titanium dioxide, zinc oxide, bismuth-based semiconductors, iron oxide, silver phosphate, etc. or their precursors.
采用行星式高能球磨机,其中磨球及球磨罐的材质均为玛瑙。 A planetary high-energy ball mill is used, in which the materials of the ball and the ball mill are agate.
所述第二步中,球磨转速为300~600转/分,连续球磨时间为2~4小时。 In the second step, the ball milling speed is 300-600 rpm, and the continuous ball milling time is 2-4 hours.
本发明利用机械化学制备共轭分子杂化改性半导体光催化材料,为无溶剂固相反应,产率高。能在常温、常压条件下,有效制备表面杂化半导体基光催化材料,适宜批量生产。从根本上避免了制备光催化材料过程中废液的产生,简化合成过程,降低成本。 The invention utilizes mechanochemistry to prepare conjugated molecule hybridization modified semiconductor photocatalytic material, which is a solvent-free solid phase reaction and has high yield. The surface hybrid semiconductor-based photocatalytic material can be effectively prepared under normal temperature and normal pressure conditions, and is suitable for mass production. The production of waste liquid in the process of preparing the photocatalytic material is fundamentally avoided, the synthesis process is simplified, and the cost is reduced.
本发明提供的纳米杂化半导体光催化材料可用于环境领域中水污染处理、空气净化、抗菌杀菌,以及能源领域中光解水制氢、二氧化碳转化等。 The nano-hybrid semiconductor photocatalytic material provided by the invention can be used for water pollution treatment, air purification, antibacterial and sterilization in the environmental field, as well as hydrogen production by photolysis of water and carbon dioxide conversion in the energy field.
将机械化学应用于半导体光催化材料改性,通过机械化学作用实现共轭 π 分子在半导体表面扩散、反应,形成化学键等,构筑由共轭分子表面杂化的半导体光催化材料。杂化结构及杂化作用,能有效促进光生载流子的有效分离,同时也扩展了半导体的光吸收范围,提高半导体光催化活性和产生可见光活性。 Apply mechanochemistry to the modification of semiconductor photocatalytic materials, realize the diffusion and reaction of conjugated π molecules on the surface of semiconductors, form chemical bonds, etc. through mechanochemical action, and construct semiconductor photocatalytic materials hybridized on the surface of conjugated molecules. The hybrid structure and hybridization effect can effectively promote the effective separation of photogenerated carriers, and at the same time expand the light absorption range of the semiconductor, improve the photocatalytic activity of the semiconductor and generate visible light activity.
附图说明 Description of drawings
图1为本发明实施例1制备的共轭分子杂化半导体光催化材料高分辨率透射电镜照片,其中a、b 为3%-C3N4/TiO2,c、d为 5%-C3N4/TiO2; Figure 1 is a high-resolution transmission electron micrograph of the conjugated molecular hybrid semiconductor photocatalytic material prepared in Example 1 of the present invention, where a, b are 3%-C 3 N 4 /TiO 2 , c, d are 5%-C 3 N 4 /TiO 2 ;
图2为本发明实施例1制备的共轭分子杂化半导体光催化材料晶体结构分析XRD图谱; Fig. 2 is the XRD spectrum of the crystal structure analysis of the conjugated molecular hybrid semiconductor photocatalytic material prepared in Example 1 of the present invention;
图3为在可见光照射下,实施例1制备的共轭分子杂化半导体光催化材料的光催化降解活性 (a) 和光电流图 (b); Figure 3 is the photocatalytic degradation activity (a) and photocurrent diagram (b) of the conjugated molecular hybrid semiconductor photocatalytic material prepared in Example 1 under visible light irradiation;
图4为在紫外光照射下,实施例1制备的共轭分子杂化半导体光催化材料的光催化降解活性 (a) 和光电流谱图 (b); Figure 4 is the photocatalytic degradation activity (a) and photocurrent spectrum (b) of the conjugated molecular hybrid semiconductor photocatalytic material prepared in Example 1 under ultraviolet light irradiation;
图5为本发明实施例2制备的共轭分子杂化半导体光催化材料高分辨率透射电镜照片,其中a、b 为3%-C3N4/ZnO,c、d为 7%-C3N4/ ZnO; Figure 5 is a high-resolution transmission electron micrograph of the conjugated molecular hybrid semiconductor photocatalytic material prepared in Example 2 of the present invention, where a and b are 3%-C 3 N 4 /ZnO, c and d are 7%-C 3 N 4 /ZnO;
图6为在可见光照射下,实施例2制备的共轭分子杂化半导体光催化材料的光催化降解活性 (a) 和光电流图 (b); Figure 6 is the photocatalytic degradation activity (a) and photocurrent diagram (b) of the conjugated molecular hybrid semiconductor photocatalytic material prepared in Example 2 under visible light irradiation;
图7为在可见光照射下,实施例2制备的共轭分子杂化半导体光催化材料的稳定性循环试验。 Fig. 7 is a stability cycle test of the conjugated molecular hybrid semiconductor photocatalytic material prepared in Example 2 under visible light irradiation.
具体实施方式 Detailed ways
以下结合具体的实施例对本发明的技术方案作进一步说明: The technical scheme of the present invention will be further described below in conjunction with specific embodiments:
实施例1 Example 1
将锐钛矿型纳米 二氧化钛(TiO2)与 共轭分子石墨相氮化碳(g-C3N4)按不同的质量比称量,掺杂源g-C3N4质量分数分别为原料总质量的3%~5%。在玛瑙研钵中研磨混合均匀,按球/料质量比为 10:1 加入 50 ml 玛瑙球磨罐中,在行星式高能球磨机中以 350 rpm 的速度球磨 3小时,得到不同比例的 g-C3N4/TiO2 杂化光催化材料。进行结构表征,并以亚甲基蓝为探针化合物,分别评价其可见、紫外光催化活性。结果显示,g-C3N4/TiO2的可见光催化活性是纯g-C3N4的约3倍,在紫外光下是纯TiO2 的约1.3倍,相对应的光电流分别约为2.5倍和1.5倍。 The anatase-type nano-titanium dioxide (TiO 2 ) and the conjugated molecular graphitic carbon nitride (gC 3 N 4 ) were weighed according to different mass ratios, and the mass fraction of the doping source gC 3 N 4 was 3% of the total mass of the raw materials. ~5%. Grind and mix them evenly in an agate mortar, add them into a 50 ml agate ball mill jar at a ball/material mass ratio of 10:1, and mill in a planetary high-energy ball mill at a speed of 350 rpm for 3 hours to obtain different proportions of gC 3 N 4 /TiO 2 hybrid photocatalytic materials. Structural characterization was carried out, and methylene blue was used as a probe compound to evaluate its visible and ultraviolet photocatalytic activity. The results show that the visible light catalytic activity of gC 3 N 4 /TiO 2 is about 3 times that of pure gC 3 N 4 and about 1.3 times that of pure TiO 2 under ultraviolet light, and the corresponding photocurrents are about 2.5 times and 1.5 times.
实施例2 Example 2
将纳米氧化锌(ZnO)与共轭分子g-C3N4按不同的质量比称量, 其中g-C3N4质量分数分别为原料总质量的3%~5%。在玛瑙研钵中研磨混合均匀,按球/料质量比为 20:1 放入 50 ml 玛瑙球磨罐中,在球磨机中以 450 rpm 的速度球磨 2小时,得到不同比例的 g-C3N4/ZnO 杂化光催化材料。对其进行结构表征,并以亚甲基蓝为探针化合物,在常温条件下,评价其光催化活性。结果显示,在可见光照射下g-C3N4/ZnO的光催化活性是纯g-C3N4的近3倍,对应的光电流约为2.5倍,且催化剂性能稳定。 The nanometer zinc oxide (ZnO) and the conjugated molecule gC 3 N 4 are weighed according to different mass ratios, wherein the mass fraction of gC 3 N 4 is respectively 3%~5% of the total mass of raw materials. Grind and mix evenly in an agate mortar, put them into a 50 ml agate ball mill jar at a ball/material mass ratio of 20:1, and mill in a ball mill at a speed of 450 rpm for 2 hours to obtain different proportions of gC 3 N 4 /ZnO hybrid photocatalytic materials. Its structure was characterized, and its photocatalytic activity was evaluated at room temperature with methylene blue as a probe compound. The results show that the photocatalytic activity of gC 3 N 4 /ZnO is nearly three times that of pure gC 3 N 4 under visible light irradiation, and the corresponding photocurrent is about 2.5 times, and the catalyst performance is stable.
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103252228A (en) * | 2013-06-08 | 2013-08-21 | 江苏悦达墨特瑞新材料科技有限公司 | Preparation method of composite nanomaterial of nano ZnO and graphene nanosheet |
-
2015
- 2015-06-17 CN CN201510335466.1A patent/CN104959161A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103252228A (en) * | 2013-06-08 | 2013-08-21 | 江苏悦达墨特瑞新材料科技有限公司 | Preparation method of composite nanomaterial of nano ZnO and graphene nanosheet |
Non-Patent Citations (1)
Title |
---|
JIANWEI ZHOU ET AL: ""Photocatalytic enhancement of hybrid C3N4/TiO2 prepared via ball milling method"", 《PHYS.CHEM.CHEM.PHYS》 * |
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