CN104953208A - Ku band type double distribution filter - Google Patents

Abstract

The invention relates to a Ku-band double-distributed filter, which is composed of two microwave filters and a single-pole double-throw switch chip WKD0016H. Its function is mainly realized by the parallel resonant unit of stripline structure. The microwave filter bank structure is realized by LTCC process technology. The invention has the advantages of small size, high temperature resistance, low cost, high quality, good stability, high reliability, good material consistency, high yield, good environmental protection, etc., and is widely used in satellite communications such as mobile communications and Beidou navigation systems , Systems and equipment with high requirements on electrical properties, material consistency, thermomechanical properties, temperature stability, manufacturability and anti-interference.

Description

A Kind of Ku-band Bidistributed Filter

technical field

The invention relates to the technical field of filters, in particular to a Ku-band double-distribution filter.

Background technique

With the rapid development of the electronic industry, the integration, modularization, high performance and low cost of electronic components have become the development direction of the radio frequency field at home and abroad. At the same time, with the rapid increase of the operating frequency of electronic equipment, the frequency of electromagnetic interference is also increasing. The higher is the urgent need for a filter that can attenuate the high-frequency signal of radiation interference, which also puts forward higher requirements for the comprehensive performance of the microwave filter. The main indicators of this band-pass filter bank are: pass-band insertion loss, pass-band return loss, square coefficient, time-delay frequency characteristics, stop-band attenuation, pass-band VSWR, quality factor, etc. A bandpass filter allows signals of a certain frequency band to pass through, and suppresses signals, interference and noise below or above the frequency band. There are many types of processing techniques. In recent years, low-temperature co-fired ceramic technology is mostly used at home and abroad.

Low temperature co-fired ceramics (LTCC) is an integrated component technology developed in recent years. It has become the mainstream technology of passive integration and the development direction of passive components. It adopts multi-layer ceramic technology, which can build passive components inside the dielectric substrate, and can also mount active components on the surface of the substrate to make passive/active integrated functional modules. The use of LTCC to prepare chip passive integrated devices and modules has many advantages. Ceramic materials have excellent high-frequency and high-quality characteristics. Using metal materials with high conductivity as conductors is beneficial to the quality factor of the system, and can also adapt to large currents and durability. High temperature requirements, it can embed passive components in multi-layer circuit substrates, which is conducive to improving the system assembly density, and is easy to realize the integrated structure of multi-layer wiring and packaging, which can improve reliability, high temperature resistance, high humidity and other harsh environments. The discontinuous production process facilitates the quality inspection of each layer of wiring and interconnection holes before firing the substrate, reducing costs. Because LTCC technology has the advantages of three-dimensional integration, it is widely used in the microwave frequency band to manufacture various microwave passive components to achieve high integration of passive components. The stacking technology based on the LTCC process can realize three-dimensional integration, so that various micro microwave filters have many advantages such as small size, light weight, excellent performance, high reliability, good consistency in mass production performance, and low cost. The characteristics of three-dimensional integrated structure can realize micro-wave filters.

Contents of the invention

The object of the present invention is to provide a double-distributed microwave microwave oven with small volume, high temperature resistance, low cost, high quality, good stability, high reliability, good material consistency, high yield and good environmental protection realized by the strip line structure. filter.

The above objects of the invention are achieved by the technical features of the independent claims, which the dependent claims develop in an alternative or advantageous manner.

To achieve the above purpose, the present invention proposes a Ku-band double-distributed filter, which is composed of two band-pass microwave filters and a single-pole double-throw switch chip WKD0016H.

The first microwave filter includes a 50-ohm impedance first input port, a first input inductance, a first-level parallel resonance unit, a second-level parallel resonance unit, a third-level parallel resonance unit, a fourth-level parallel resonance unit, and a fifth-level Parallel resonant unit, first output inductor, first Z-shaped interstage coupling stripline, first coupling stripline, first ground capacitor, second ground capacitor, 50 ohm impedance first output port and ground terminal. The parallel resonant units at all levels are composed of two layers of parallel striplines, the first layer is composed of the first stripline, the third stripline, the fifth stripline, the seventh stripline, and the ninth stripline, The second layer is composed of the second stripline, the fourth stripline, the sixth stripline, the eighth stripline, and the tenth stripline, wherein the 50 ohm impedance first input port and the first input inductor end connected, the other end of the first input inductance is connected to the second stripline of the second layer of the first-level parallel resonant unit, and one end of the first output inductance is connected to the tenth stripline of the second layer of the fifth-level parallel resonant unit , the first output port with 50 ohm impedance is connected to the other end of the first output inductor, the first Z-shaped interstage coupling stripline is located under the parallel resonant unit, and the first coupled stripline is located on the second side of the second parallel resonant unit Below the fourth stripline of the layer, the first coupled stripline is located above the first Z-shaped interstage coupled stripline, the first ground capacitor is located above the first input inductor, and the second ground capacitor is located above the first output above the inductor. The ground terminal of each layer of stripline is the same, one end is grounded, the other end is open circuit, the second layer is opposite to the ground terminal of the first layer, the first coupled stripline, one end is grounded, one end is open circuit, the first ground capacitor, one end is grounded, and one end is open circuit , the second grounding capacitor has one end grounded and one end open circuited, and both ends of the first Z-shaped interstage coupling stripline are grounded.

The second microwave filter includes a 50-ohm impedance second input port, a second input inductance, a first-level parallel resonance unit, a second-level parallel resonance unit, a third-level parallel resonance unit, a fourth-level parallel resonance unit, and a fifth-level Parallel resonant unit, second output inductance, second Z-shaped interstage coupling stripline, first ground capacitor, second ground capacitor, first coupling stripline, 50 ohm impedance second output port and ground terminal. The parallel resonant units at all levels are composed of two layers of parallel striplines. The first layer consists of the eleventh stripline, the thirteenth stripline, the fifteenth stripline, the seventeenth stripline, and the nineteenth stripline. The second layer is composed of the twelfth stripline, the fourteenth stripline, the sixteenth stripline, the eighteenth stripline, and the twentieth stripline. Among them, the impedance of 50 ohms The second input port is connected to one end of the second input inductance, the twelfth strip line of the second layer of the first-level parallel resonance unit is connected to the other end of the second input inductance, and the second layer of the fifth-level parallel resonance unit Twenty striplines are connected to one end of the second output inductance, the second output port of 50 ohm impedance is connected to the other end of the second output inductance, the second Z-shaped interstage coupling stripline is located below the parallel resonant unit, and the second coupling strip The stripline is located below the fourteenth stripline of the second layer of the second-level parallel resonant unit, the second coupling stripline is located above the second Z-shaped interstage coupling stripline, and the third grounding capacitor is located on the second Above the input inductor, the fourth ground capacitor is located above the second output inductor. The ground terminals of each layer of stripline are the same, one end is grounded and the other end is open, the second layer is opposite to the ground terminal of the first layer, both ends of the second Z-shaped interstage coupling stripline are grounded, the second coupling stripline, one end Grounding, one end open circuit, the third grounding capacitor, one end grounding, one end open circuit, the fourth grounding capacitor, one end grounding, one end open circuit, RFOut1 of SPDT switch chip WKD0016H is connected to the first input port of 50 ohm impedance, RFOut2 is connected to 50 ohm impedance The second input port is connected.

LTCC is the processing technology adopted in the present invention, and it has the advantages of good consistency, high precision, small size, low cost, high reliability, good temperature stability, and high electrical performance, which are not available in other processing technologies.

It should be understood that all combinations of the foregoing concepts, as well as additional concepts described in more detail below, may be considered part of the inventive subject matter of the present disclosure, provided such concepts are not mutually inconsistent. Additionally, all combinations of claimed subject matter are considered a part of the inventive subject matter of this disclosure.

The foregoing and other aspects, embodiments and features of the present teachings can be more fully understood from the following description when taken in conjunction with the accompanying drawings. Other additional aspects of the invention, such as the features and/or advantages of the exemplary embodiments, will be apparent from the description below, or learned by practice of specific embodiments in accordance with the teachings of the invention.

Description of drawings

The figures are not intended to be drawn to scale. In the drawings, each identical or nearly identical component that is illustrated in various figures may be represented by a like reference numeral. For purposes of clarity, not every component may be labeled in every drawing. Embodiments of the various aspects of the invention will now be described by way of example with reference to the accompanying drawings, in which:

Fig. 1(a) is a schematic diagram of the shape and structure of a Ku-band bi-distributed filter according to some embodiments of the present invention.

Fig. 1(b) is a schematic diagram of the internal structure of the first microwave filter in the Ku-band double-distributed filter shown in Fig. 1(a).

Fig. 1(c) is a schematic diagram of the internal structure of the second microwave filter in the Ku-band double-distributed filter shown in Fig. 1(b).

Fig. 2 is the amplitude-frequency characteristic curve of the output port when the Ku-band double-distributed filter shown in Fig. 1 is connected to the first microwave filter.

Fig. 3 is the standing wave characteristic curve of the input port when the Ku-band double-distributed filter shown in Fig. 1 is connected to the first microwave filter.

Fig. 4 is the amplitude-frequency characteristic curve of the output port when the Ku-band double-distributed filter shown in Fig. 1 is connected to the second microwave filter.

Fig. 5 is the standing wave characteristic curve of the input port when the Ku-band double-distributed filter shown in Fig. 1 is connected to the second microwave filter.

Detailed ways

In order to better understand the technical content of the present invention, specific embodiments are given together with the attached drawings for description as follows.

Aspects of the invention are described in this disclosure with reference to the accompanying drawings, which show a number of illustrated embodiments. Embodiments of the present disclosure are not necessarily intended to include all aspects of the invention. It should be understood that the various concepts and embodiments described above, as well as those concepts and embodiments described in more detail below, can be implemented in any of a number of ways, which should be the concepts and embodiments disclosed by the present invention and not Not limited to any implementation. In addition, some aspects of the present disclosure may be used alone or in any suitable combination with other aspects of the present disclosure.

The present invention will be described in further detail below in conjunction with the accompanying drawings.

In conjunction with Fig. 1 a, b, c, a kind of Ku band double distribution filter of the present invention, the first microwave filter F1 of this filter group comprises the first input port P1 of 50 ohms impedance, the first input inductance Lin1, the first stage parallel connection The resonant unit is composed of L11 and L21, the second parallel resonant unit is composed of L12 and L22, the third parallel resonant unit is composed of L13 and L23, the fourth parallel resonant unit is composed of L14 and L24, the fifth parallel resonant unit Composed of L15 and L25, the first output inductance Lout1, the first Z-shaped inter-stage coupling stripline Z1, the first coupling stripline ZF1, the first grounding capacitor C1, the second grounding capacitor C2, and the first output of 50 ohm impedance port P2 and ground.

Parallel resonant units at all levels are composed of two layers of parallel striplines, the first layer consists of the first stripline L11, the third stripline L12, the fifth stripline L13, the seventh stripline L14, the ninth stripline The second layer is composed of the second stripline L21, the fourth stripline L22, the sixth stripline L23, the eighth stripline L24, and the tenth stripline L25.

Wherein, the first input port P1 with 50 ohm impedance is connected to one end of the first input inductance Lin1, and the second stripline L21 of the second layer of the first-stage parallel resonant unit L11, L21 is connected to the other end of the first input inductance Lin1 , the tenth stripline L25 of the second layer of the fifth-level parallel resonant unit L15, L25 is connected to one end of the first output inductor Lout1, and the first output port P2 of 50 ohm impedance is connected to the other end of the first output inductor Lout1, The first Z-shaped inter-stage coupling stripline Z1 is located below the parallel resonant unit, the first coupled stripline ZF1 is located below the fourth stripline L22 of the second layer of the second-stage parallel resonant unit L12, L22, and the second A coupling stripline ZF1 is located above the first Z-shaped inter-stage coupling stripline Z1, the first ground capacitor C1 is located above the first input inductor Lin1, and the second ground capacitor C2 is located above the first output inductor Lout1.

The ground terminals of each layer of stripline are the same, one end is grounded and the other end is open, the ground terminal of the second layer is opposite to that of the first layer, both ends of the first Z-shaped interstage coupling stripline Z1 are grounded, and the first coupling stripline ZF1 , one end is open and one end is grounded, the first grounding capacitor C1 has one end open and one end is grounded, the second grounding capacitor C2 has one end open and one end is grounded.

The second microwave filter F2 includes a 50-ohm impedance second input port P3, a second input inductance Lin2, the first-stage parallel resonant unit is composed of L31, L41, the second-stage parallel resonant unit is composed of L32, L42, and the third-stage parallel The resonance unit is composed of L33 and L43, the fourth-level parallel resonance unit is composed of L34 and L44, the fifth-level parallel resonance unit is composed of L35 and L45, the second output inductance Lout2, the second Z-shaped inter-stage coupling stripline Z2, The second coupled stripline ZF2, the third ground capacitor C3, the fourth ground capacitor C4, the 50 ohm impedance second output port P4, and the ground terminal.

The parallel resonant units at all levels are composed of two layers of parallel striplines, the first layer consists of the eleventh stripline L31, the thirteenth stripline L32, the fifteenth stripline L33, and the seventeenth stripline L34 , the nineteenth stripline L35, the second layer consists of the twelfth stripline L41, the fourteenth stripline L42, the sixteenth stripline L43, the eighteenth stripline L44, the twentieth stripline Formed by the shape line L45.

Wherein, the 50 ohm impedance second input port P3 is connected to one end of the second input inductance Lin2, and the twelfth strip line L41 of the second layer of the first-stage parallel resonant unit L31, L41 is connected to the other end of the second input inductance Lin2 Connection, the twentieth stripline L45 of the second layer of the fifth-level parallel resonant unit L35, L45 is connected to one end of the second output inductance Lout2, and the second output port P4 of 50 ohm impedance is connected to the other end of the second output inductance Lout2 connection, the second Z-shaped inter-stage coupling stripline Z2 is located below the parallel resonant unit, and the second coupled stripline ZF2 is located at the fourteenth stripline L42 of the second layer of the second-level parallel resonant unit L32, L42 Below, the second coupled stripline ZF2 is located above the second Z-shaped inter-stage coupled stripline Z2, the third ground capacitor C3 is located above the second input inductor Lin2, and the fourth ground capacitor C4 is located above the second output inductor Lout2 above.

The ground terminals of each stripline are the same, one end is grounded and the other end is open, the second layer is opposite to the ground terminal of the first layer, both ends of the second Z-shaped inter-stage coupling stripline Z2 are grounded, and the second coupling stripline ZF2 , one end is grounded and one end is open circuit, the third ground capacitor C3 has one end grounded and one end is open circuit, and the fourth ground capacitor C4 has one end grounded and one end open circuit. RFOut1 of the SPDT switch chip WKD0016H is connected to the first input port P1 with 50 ohm impedance, and RFOut2 is connected to the second input port P3 with 50 ohm impedance.

Combined with Figure 1 (a), (b), (c), 50 ohm impedance input port (P1, P3), 50 ohm impedance output port (P2, P4), input inductance (Lin1, Lin2), output inductance (Lout1, Lout2), grounding capacitors (C1, C2, C3, C4), coupled striplines (ZF1, ZF2), first-stage parallel resonant units (L11, L21, L31, L41), second-stage parallel resonant units (L12, L22, L32, L42), third-level parallel resonance unit (L13, L23, L33, L43), fourth-level parallel resonance unit (L14, L24, L34, L44), fifth-level parallel resonance unit (L15, L25, L35, L45), Z-shaped inter-stage coupling striplines (Z1, Z2) and ground terminals are all realized by multi-layer low-temperature co-fired ceramic technology.

A Ku-band double-distributed filter is realized by using a multi-layer LTCC process, so it has very high temperature stability and consistency, and also has a certain strength of the raw band. Because the structure adopts three-dimensional integration and multi-layer folding structure, and the metal shielding on the outer surface realizes grounding and packaging, the cost is minimized.

The dimensions of the two microwave filters in the Ku-band double-distributed filter of the present invention are both 3.2mm×3.2mm×1.5mm. Its performance can be seen from Figure 2, Figure 3, Figure 4, and Figure 5. The passband bandwidth of the first microwave filter is 11.5GHz to 14GHz, the return loss of the input port reaches 20dB, and the insertion loss of the output port reaches 2.9dB. The passband bandwidth of the second microwave filter is 15.5GHz to 18GHz, the return loss of the input port reaches 20dB, and the insertion loss of the output port reaches 3dB.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Those skilled in the art of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the claims.

Claims (3)

1. a Ku band dual distribution filter, it is characterized in that, be made up of two microwave band-pass filters (F1, F2) and a single-pole double-throw switch (SPDT) chip, described single-pole double-throw switch (SPDT) chip adopts WKD0016H chip, this chip passes through back metal via through holes ground connection, wherein:

Described first microwave filter (F1) comprises 50 ohmage first input end mouths (P1), first input inductance (Lin1), first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, first outputting inductance (Lout1), first Z-shaped interstage coupling strip line (Z1), first coupling strip line (ZF1), first ground capacity (C1), second ground capacity (C2), 50 ohmage first output port (P2) and earth terminals, described first order parallel resonance unit is made up of the first strip line L11 and the second strip line L21, second level parallel resonance unit is by the 3rd strip line (L12), 4th strip line (L22) is formed, third level parallel resonance unit is by the 5th strip line (L13), 6th shape line (L23) is formed, fourth stage parallel resonance unit is by the 7th strip line (L14), 8th strip line (L24) is formed, level V parallel resonance unit is by the 9th strip line (L15), tenth strip line (L25) is formed,

Parallel resonance unit at different levels forms by two-layer parallel strip line, and ground floor is made up of described the first strip line (L11), the 3rd strip line (L12), the 5th strip line (L13), the 7th strip line (L14), the 9th strip line (L15);

The second layer is made up of described the second strip line (L21), the 4th strip line (L22), the 6th strip line (L23), the 8th strip line (L24), the tenth strip line (L25);

Wherein, the connected mode of aforementioned two microwave band-pass filters (F1, F2) and a single-pole double-throw switch (SPDT) chip is as follows:

50 ohmage first input end mouths (P1) are connected with first one end inputting inductance (Lin1), the other end of the first input inductance (Lin1) is connected with the second strip line (L21), one end of first outputting inductance (Lout1) is connected with the tenth strip line (L25), the other end of the first outputting inductance (Lout1) is connected with first output port (P2) of 50 ohmages, first Z-shaped interstage coupling strip line (Z1) is positioned at the below of parallel resonance unit, first coupling strip line (ZF1) is positioned at the below of the 4th strip line (L22), first coupling strip line (ZF1) is positioned at the top of the first Z-shaped interstage coupling strip line (Z1), first ground capacity (C1) is positioned at the top of the first input inductance (Lin1), second ground capacity (C2) is positioned at the top of the first outputting inductance (Lout1),

Every layer of strip line earth terminal is identical, one end ground connection, and the other end is opened a way, the second layer is contrary with ground floor earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line (Z1) two ends, the first coupling strip line (ZF1), open a way in one end, one end ground connection, the first ground capacity (C1), open a way in one end, one end ground connection, second ground capacity (C2), open a way in one end, one end ground connection;

The input port that 50 ohmage first input end mouths (P1) are signal, input signal is transferred to the second strip line (L21) via the first input inductance (Lin1), through first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, first Z-shaped interstage coupling strip line (Z1), first coupling strip line (ZF1), first ground capacity (C1), the electromagnetic coupled of the second ground capacity (C2), be transferred to the tenth strip line (L25), via the first outputting inductance (Lout1), export at the first output port (P2),

Second microwave filter (F2) comprises 50 ohmage second input ports (P3), second input inductance (Lin2), first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, second outputting inductance (Lout2), second Z-shaped interstage coupling strip line (Z2), second coupling strip line (ZF2), 3rd ground capacity (C3), 4th ground capacity (C4), 50 ohmage second output port (P4) and earth terminals, wherein: first order parallel resonance unit is by the 11 strip line (L31), 12 strip line (L41) is formed, second level parallel resonance unit is by the 13 strip line (L32), 14 strip line (L42) is formed, third level parallel resonance unit is by the 15 strip line (L33), 16 strip line (L43) is formed, fourth stage parallel resonance unit is by the 17 strip line (L34), 18 strip line (L44) is formed, level V parallel resonance unit is by the 19 strip line L35, 20 strip line L45 is formed,

Parallel resonance unit at different levels forms by two-layer parallel strip line, and ground floor is made up of described 11 strip line (L31), the 13 strip line (L32), the 15 strip line (L33), the 17 strip line (L34), the 19 strip line (L35);

The second layer is made up of described 12 strip line (L41), the 14 strip line (L42), the 16 strip line (L43), the 18 strip line (L44), the 20 strip line (L45);

Wherein, one end that second input port (P3) and second of 50 ohmages inputs inductance (Lin2) is connected, the other end of the second input inductance (Lin2) is connected with the 12 strip line (L41), 20 strip line (L45) is connected with one end of the second outputting inductance (Lout2), second output port (P4) of 50 ohmages is connected with the other end of the second outputting inductance (Lout2), second Z-shaped interstage coupling strip line (Z2) is positioned at the below of parallel resonance unit, second coupling strip line (ZF2) is positioned at the below of the 14 strip line (L42), second coupling strip line (ZF2) is positioned at the top of the second Z-shaped interstage coupling strip line (Z2), 3rd ground capacity (C3) is positioned at the top of the second input inductance (Lin2), 4th ground capacity (C4) is positioned at the top of the second outputting inductance (Lout2),

Every layer of strip line earth terminal is identical, one end ground connection, the other end is opened a way, the second layer is contrary with ground floor earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line (Z2) two ends, second coupling strip line (ZF2), one end ground connection, open a way in one end, 3rd ground capacity (C3), one end ground connection, open a way in one end, 4th ground capacity (C4), one end ground connection, open a way in one end, 50 ohmage first input end mouths (P1) are connected with the RFOut1 of single-pole double-throw switch (SPDT) chips W KD0016H, 50 ohmage second input ports (P3) are connected with RFOut2,

The input port that second input port (P3) of 50 ohmages is signal, input signal is transferred to the 12 strip line (L41) via the second input inductance (Lin2), through first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, second Z-shaped interstage coupling strip line (Z2), second coupling strip line (ZF2), 3rd ground capacity (C3), the electromagnetic coupled of the 4th ground capacity (C4), be transferred to the 20 strip line (L45), via the second outputting inductance (Lout2), export at the second output port (P4).

2. Ku band dual distribution filter according to claim 1, it is characterized in that, described WKD0016H chip uses the long GaAs pseudomorphic high electron mobility transistor manufacture technics of 0.25 micron of grid to form, adopt 0/-5V power work, insertion loss in 6 ~ 18GHz: 2dB, isolation: 38dB, input vswr: 1.3:1, output VSWR: 1.3:1, switching time: 10ns.

3. Ku band dual distribution filter according to claim 1, it is characterized in that, described each 50 ohmage input port (P1, P3), 50 ohmage output port (P2, P4), input inductance (Lin1, Lin2), outputting inductance (Lout1, Lout2), ground capacity (C1, C2, C3, C4), first order parallel resonance unit (L11, L21, L31, L41), second level parallel resonance unit (L12, L22, L32, L42), third level parallel resonance unit (L13, L23, L33, L43), fourth stage parallel resonance unit (L14, L24, L34, L44), level V parallel resonance unit (L15, L25, L35, L45), Z-shaped interstage coupling strip line (Z1, Z2), coupling strip line (ZF1, ZF2) and earth terminal all adopt LTCC technique to realize.