CN104877278A - Poly-n-butyl methacrylate/polyvinylidene fluoride vinyl compound dielectric film and preparation method thereof - Google Patents
Poly-n-butyl methacrylate/polyvinylidene fluoride vinyl compound dielectric film and preparation method thereof Download PDFInfo
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- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229920002981 polyvinylidene fluoride Polymers 0.000 title claims abstract description 21
- 239000002033 PVDF binder Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- -1 vinyl compound Chemical class 0.000 title abstract description 7
- 229920002554 vinyl polymer Polymers 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 claims abstract 12
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 11
- 229920002313 fluoropolymer Polymers 0.000 claims description 9
- 239000004811 fluoropolymer Substances 0.000 claims description 9
- 239000012766 organic filler Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 2
- 238000013019 agitation Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 238000005266 casting Methods 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 claims 1
- 238000009740 moulding (composite fabrication) Methods 0.000 claims 1
- 150000005846 sugar alcohols Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract description 13
- 238000002156 mixing Methods 0.000 abstract description 10
- 239000003989 dielectric material Substances 0.000 abstract description 6
- 239000000945 filler Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000010345 tape casting Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 35
- 239000002131 composite material Substances 0.000 description 25
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 23
- 229920001577 copolymer Polymers 0.000 description 10
- 229920000131 polyvinylidene Polymers 0.000 description 10
- 229920001166 Poly(vinylidene fluoride-co-trifluoroethylene) Polymers 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000005325 percolation Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101150004822 PSAN gene Proteins 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- HAUBPZADNMBYMB-UHFFFAOYSA-N calcium copper Chemical compound [Ca].[Cu] HAUBPZADNMBYMB-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920013657 polymer matrix composite Polymers 0.000 description 1
- 239000011160 polymer matrix composite Substances 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08L27/16—Homopolymers or copolymers or vinylidene fluoride
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2327/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers
- C08J2327/02—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment
- C08J2327/12—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08J2327/16—Homopolymers or copolymers of vinylidene fluoride
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2433/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
- C08J2433/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
- C08J2433/06—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C08J2433/10—Homopolymers or copolymers of methacrylic acid esters
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/16—Applications used for films
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Abstract
Description
技术领域 technical field
本发明属于复合介电薄膜领域,特别涉及一种聚甲基丙烯酸正丁酯(PBMA)/聚偏氟乙烯基复合介电薄膜。 The invention belongs to the field of composite dielectric films, in particular to a polyn-butyl methacrylate (PBMA)/polyvinylidene fluoride-based composite dielectric film.
背景技术 Background technique
拥有高介电常数、低介电损耗的聚合物基介电材料因其在储存电能方面有着巨大的潜能而被广泛应用,例如通信设备、电荷存储电容系统、人工肌肉、制动器和航天军事等方面。传统的电介质材料包括无机陶瓷材料和有机高分子材料。常见的无机陶瓷材料,如钛酸钡(BaTiO3)、钛酸铜钙(CCTO)、锆钛酸铅 (PZT) 等,具有非常高的介电常数,但是它们制备工艺复杂、易脆且介电损耗较大。常见的有机高分子材料有聚乙烯、聚丙烯、聚三氟乙烯、环氧树脂等,它们柔性好、介电损耗低、易于加工成膜,但是它们的介电常数相对较低。单一的电介质材料已经难以满足工业化的需要, 因此制备高介电性能的聚合物基复合材料具有非常重要的意义.目前,聚合物基介电材料主要分为以下三种类型:(1).无机陶瓷材料:如钛酸钡(BaTiO3),其电容较大,介电常数高达6300,但该材料烧结温度高、制备过程复杂、易脆,加工要求高,并且与聚合物相容性差,不易成膜,机械性能差。(2).导电材料:将石墨烯作为填料添加到PVDF中形成复合材料,在1000Hz复合材料的介电常数是PVDF基体的3倍还多,但是复合材料会受渗流阈值的影响,接近渗流阈值时介电损耗会有很大的提高,同时介电材料突变为导电材料,严重影响其生产应用。(3).有机复合材料:如聚苯乙烯(PS),通过溶液涂膜的方法制备了PSAN薄膜,薄膜的介电常数为4,介电损耗0.027,储能密度达到6.8J/cm3,柔韧性好,介电损耗低,但是介电常数过小。 Polymer-based dielectric materials with high dielectric constant and low dielectric loss are widely used because of their great potential in storing electrical energy, such as communication equipment, charge storage capacitor systems, artificial muscles, brakes, and aerospace military. . Traditional dielectric materials include inorganic ceramic materials and organic polymer materials. Common inorganic ceramic materials, such as barium titanate (BaTiO3), copper calcium titanate (CCTO), lead zirconate titanate (PZT), etc., have very high dielectric constants, but their preparation process is complex, brittle and dielectric The loss is large. Common organic polymer materials include polyethylene, polypropylene, polytrifluoroethylene, epoxy resin, etc. They have good flexibility, low dielectric loss, and are easy to process into films, but their dielectric constant is relatively low. A single dielectric material has been difficult to meet the needs of industrialization, so the preparation of polymer-based composite materials with high dielectric properties is of great significance. At present, polymer-based dielectric materials are mainly divided into the following three types: (1). Inorganic Ceramic materials: such as barium titanate (BaTiO 3 ), which has a large capacitance and a dielectric constant as high as 6300, but the material has a high sintering temperature, complicated preparation process, brittleness, high processing requirements, and poor compatibility with polymers, so it is not easy to Film-forming, poor mechanical properties. (2). Conductive material: Graphene is added to PVDF as a filler to form a composite material. At 1000Hz, the dielectric constant of the composite material is more than three times that of the PVDF matrix, but the composite material will be affected by the percolation threshold, which is close to the percolation threshold. At the same time, the dielectric loss will be greatly improved, and the dielectric material will suddenly change into a conductive material, which will seriously affect its production and application. (3). Organic composite materials: such as polystyrene (PS), prepared PSAN film by solution coating method, the dielectric constant of the film is 4, the dielectric loss is 0.027, and the energy storage density reaches 6.8J/cm 3 , Good flexibility and low dielectric loss, but the dielectric constant is too small.
发明内容 Contents of the invention
本发明的主要目的在于提供一种聚甲基丙烯酸正丁酯(PBMA)/聚偏氟乙烯基复合介电薄膜。该复合薄膜具有较好的介电性能。该聚甲基丙烯酸正丁酯(PBMA)/聚偏氟乙烯基复合介电薄膜由PBMA和含氟聚合物组成。其质量百分比组成为: The main purpose of the present invention is to provide a poly(n-butyl methacrylate) (PBMA)/polyvinylidene fluoride based composite dielectric film. The composite film has good dielectric properties. The polyn-butyl methacrylate (PBMA)/polyvinylidene fluoride-based composite dielectric film is composed of PBMA and fluoropolymer. Its mass percentage consists of:
PBMA 10%-30% PBMA 10%-30%
含氟聚合物 70%-90% Fluoropolymer 70%-90%
所述的聚甲基丙烯酸正丁酯(PBMA)/聚偏氟乙烯基复合介电薄膜,其特征在于,所述有机PBMA为市售商品; The poly-n-butyl methacrylate (PBMA)/polyvinylidene fluoride-based composite dielectric film is characterized in that the organic PBMA is a commercially available commodity;
所述含氟聚合物是聚偏氟乙烯-三氟乙烯共聚物[P(VDF-TrFE)]、聚偏氟乙烯-三氟乙烯-氟氯乙烯共聚物[P(VDF-TrFE-CFE)]中的一种。 The fluorine-containing polymer is polyvinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)], polyvinylidene fluoride-trifluoroethylene-fluorochloroethylene copolymer [P(VDF-TrFE-CFE)] One of.
本发明的另一目的是提供一种聚甲基丙烯酸正丁酯(PBMA)/聚偏氟乙烯基复合介电薄膜的制备方法: Another object of the present invention is to provide a preparation method of poly-n-butyl methacrylate (PBMA)/polyvinylidene fluoride-based composite dielectric film:
1.将PBMA、含氟聚合物和溶剂N,N-二甲基甲酰胺(DMF)混合后,超声搅拌分散均匀,形成稳定的溶胶;其质量百分比组成为: 1. After mixing PBMA, fluoropolymer and solvent N,N-dimethylformamide (DMF), ultrasonically stir and disperse evenly to form a stable sol; its mass percentage composition is:
PBMA 10%-30% PBMA 10%-30%
含氟聚合物 70%-90% Fluoropolymer 70%-90%
有机PBMA和含氟聚合物总质量与DMF的质量比为1:7-10 The mass ratio of the total mass of organic PBMA and fluoropolymer to DMF is 1:7-10
2、将步骤1制备的溶胶在模具上80±1℃流延成膜,干燥18±1h,再经过自然冷却、120±1℃退火8±1h,去除残留溶剂,即得到厚度110-150μm的有机填料/聚合物基复合介电薄膜。 2. Cast the sol prepared in step 1 on the mold at 80±1°C to form a film, dry for 18±1h, then undergo natural cooling, anneal at 120±1°C for 8±1h, and remove the residual solvent to obtain a film with a thickness of 110-150μm. Organic Filler/Polymer Matrix Composite Dielectric Films.
根据上述制备方法,在所述的有机PBMA质量比例范围内,调节其质量比例,即制得所需不同介电常数的复合介电薄膜。 According to the above preparation method, within the range of the mass ratio of the organic PBMA, the mass ratio of the organic PBMA is adjusted, that is, composite dielectric films with different required dielectric constants are prepared.
本发明具有以下有益效果: The present invention has the following beneficial effects:
a.该有机PBMA填料克服了背景技术中存在的诸多问题,其具有中级的极化率,表现出较高的介电常数,较低的介电损耗,透明性好,柔韧性较好,具有较高的机械性能。 a. The organic PBMA filler overcomes many problems in the background technology. It has intermediate polarizability, exhibits high dielectric constant, low dielectric loss, good transparency, good flexibility, and has Higher mechanical properties.
b. 该填料与基体介电常数相差较小,且与聚合物基底有很好的相容性,故复合介电薄膜具有较好的介电性能,而且其介电损耗没有明显的提升,仍维持在一个较低的位置,是一种新型的高介电复合材料。 b. The dielectric constant difference between the filler and the matrix is small, and it has good compatibility with the polymer substrate, so the composite dielectric film has good dielectric properties, and its dielectric loss does not increase significantly, still Maintained in a lower position, is a new type of high dielectric composite material.
c.该薄膜通过调节有机填料PBMA的质量比例,可以明显的改变材料的介电性能,从而制备所需高介电常数薄膜。 c. The film can obviously change the dielectric properties of the material by adjusting the mass ratio of the organic filler PBMA, so as to prepare the required high dielectric constant film.
d.该薄膜的制备工艺简单、复合温度低且对环境友好,可以根据要求而改变模具的形状大小,从而适用于不同的电子设备、储能材料中。 d. The preparation process of the film is simple, the compounding temperature is low, and it is environmentally friendly. The shape and size of the mold can be changed according to requirements, so that it is suitable for different electronic devices and energy storage materials.
本发明的复合薄膜,介电性能随着频率的变化相对稳定,没有很大的突变出现。复合薄膜的介电常数能提高到45左右。 The composite thin film of the present invention has relatively stable dielectric properties with changes in frequency, and no great mutation occurs. The dielectric constant of the composite film can be increased to about 45.
具体实施例 specific embodiment
下面通过具体的实施方案叙述本发明中产品和制备方法。除非特别说明,本发明中所用的技术手段均为本领域技术人员所公知的方法。另外,实施方案应理解为说明性的,而非限制本发明的范围,本发明的实质和范围仅由权利要求书所限定。对于本领域技术人员而言,在不违背本发明实质和范围的前提下,对这些实施方案中的比例和溶剂等条件进行的各种改变或改动也属于本发明的保护范畴。 Describe product and preparation method among the present invention by specific embodiment below. Unless otherwise specified, the technical means used in the present invention are methods known to those skilled in the art. In addition, the embodiments should be considered as illustrative rather than limiting the scope of the invention, the spirit and scope of which is defined only by the claims. For those skilled in the art, on the premise of not departing from the essence and scope of the present invention, various changes or modifications to the conditions such as ratios and solvents in these embodiments also belong to the protection category of the present invention.
以下结合具体实施例对本发明作进一步的说明,但不意味着对本发明保护范围的限制。 The present invention will be further described below in conjunction with specific examples, but it is not meant to limit the protection scope of the present invention.
实施例1: Example 1:
a.将0.0100g有机PBMA,0.1000g聚偏氟乙烯-三氟乙烯共聚物[P(VDF-TrFE)]和1.0005g溶剂DMF混合后,超声搅拌分散均匀,形成稳定的溶胶,该配料比组成为:有机PBMA为10%,聚合物为90%; a. After mixing 0.0100g of organic PBMA, 0.1000g of polyvinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] and 1.0005g of solvent DMF, ultrasonically stir and disperse evenly to form a stable sol. For: organic PBMA 10%, polymer 90%;
b.将步骤a制备的溶胶在模具上80℃流延成膜,干燥18h;再经过自然冷却、120℃退火8h,即制备出PBMA/ P(VDF-TrFE)复合介电薄膜。在1000Hz时,介电常数能达到16,介电损耗为0.21,击穿场强为322MV/m。 b. The sol prepared in step a was cast on a mold at 80°C to form a film, dried for 18 hours; then cooled naturally and annealed at 120°C for 8 hours to prepare a PBMA/P(VDF-TrFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 16, the dielectric loss is 0.21, and the breakdown field strength is 322MV/m.
实施例2: Example 2:
a.将0.0200g有机PBMA,0.1000g聚偏氟乙烯-三氟乙烯共聚物[P(VDF-TrFE)]和1.0005g溶剂DMF混合后,超声搅拌分散均匀,形成稳定的溶胶,该配料比组成为:有机PBMA为20%,聚合物为80%; a. After mixing 0.0200g of organic PBMA, 0.1000g of polyvinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] and 1.0005g of solvent DMF, ultrasonically stir and disperse evenly to form a stable sol. For: organic PBMA is 20%, polymer is 80%;
b.将步骤a制备的溶胶在模具上80℃流延成膜,干燥18h;再经过自然冷却、120℃退火8h,即制备出PBMA/ P(VDF-TrFE)复合介电薄膜。在1000Hz时,介电常数能达到23,介电损耗为0.29,击穿场强为243 MV/m。 b. The sol prepared in step a was cast on a mold at 80°C to form a film, dried for 18 hours; then cooled naturally and annealed at 120°C for 8 hours to prepare a PBMA/P(VDF-TrFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 23, the dielectric loss is 0.29, and the breakdown field strength is 243 MV/m.
实施例3: Example 3:
a.将0.0300g有机PBMA,0.1000g聚偏氟乙烯-三氟乙烯共聚物[P(VDF-TrFE)]和1.0005g溶剂DMF混合后,超声搅拌分散均匀,形成稳定的溶胶,该配料比组成为:有机PBMA为30%,聚合物为70%; a. After mixing 0.0300g of organic PBMA, 0.1000g of polyvinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] and 1.0005g of solvent DMF, ultrasonically stir and disperse evenly to form a stable sol. For: organic PBMA is 30%, polymer is 70%;
b.将步骤a制备的溶胶在模具上80℃流延成膜,干燥18h;再经过自然冷却、120℃退火8h,即制备出PBMA/ P(VDF-TrFE)复合介电薄膜。在1000Hz时,介电常数能达到21,介电损耗为0.30,击穿场强为259MV/m。 b. The sol prepared in step a was cast on a mold at 80°C to form a film, dried for 18 hours; then cooled naturally and annealed at 120°C for 8 hours to prepare a PBMA/P(VDF-TrFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 21, the dielectric loss is 0.30, and the breakdown field strength is 259MV/m.
实施例4: Example 4:
这组实施例为对比实施例。0.1000g聚偏氟乙烯-三氟乙烯共聚物[P(VDF-TrFE)]和1.0005g溶剂DMF混合后,超声搅拌分散均匀,形成稳定的溶胶,将制备的溶胶在模具上80℃流延成膜,干燥18h;再经过自然冷却、120℃退火8h,即制备出P(VDF-TrFE)复合介电薄膜。在1000Hz时,介电常数能达到15,介电损耗为0.23,击穿场强为300 MV/m。 This set of examples is comparative examples. After mixing 0.1000g of polyvinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] and 1.0005g of solvent DMF, it was dispersed evenly by ultrasonic stirring to form a stable sol, and the prepared sol was cast on a mold at 80°C to form The film was dried for 18 hours; then cooled naturally and annealed at 120°C for 8 hours to prepare a P(VDF-TrFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 15, the dielectric loss is 0.23, and the breakdown field strength is 300 MV/m.
实施例5: Example 5:
a.将0.0100g有机PBMA,0.1000g聚偏氟乙烯-三氟乙烯-氯氟乙烯共聚物[P(VDF-TrFE-CFE)]和1.0005g溶剂DMF混合后,超声搅拌分散均匀,形成稳定的溶胶,该配料比组成为:有机PBMA为10%,聚合物为90%; a. After mixing 0.0100g of organic PBMA, 0.1000g of polyvinylidene fluoride-trifluoroethylene-chlorofluoroethylene copolymer [P(VDF-TrFE-CFE)] and 1.0005g of solvent DMF, ultrasonically stir and disperse evenly to form a stable Sol, the proportion of the ingredients consists of: organic PBMA is 10%, polymer is 90%;
b.将步骤a制备的溶胶在模具上80℃流延成膜,干燥18h;再经过自然冷却、120℃退火8h,即制备出PBMA/ P(VDF-TrFE-CFE)复合介电薄膜。在1000Hz时,介电常数能达到45,介电损耗为2.5,击穿场强为322 MV/m。 b. The sol prepared in step a was cast on a mold at 80°C to form a film, dried for 18 hours; then cooled naturally and annealed at 120°C for 8 hours to prepare a PBMA/P(VDF-TrFE-CFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 45, the dielectric loss is 2.5, and the breakdown field strength is 322 MV/m.
实施例6: Embodiment 6:
a.将0.0200g有机PBMA,0.1000g聚偏氟乙烯-三氟乙烯-氯氟乙烯共聚物[P(VDF-TrFE-CFE)]和1.0005g溶剂DMF混合后,超声搅拌分散均匀,形成稳定的溶胶,该配料比组成为:有机PBMA为20%,聚合物为80%; a. After mixing 0.0200g of organic PBMA, 0.1000g of polyvinylidene fluoride-trifluoroethylene-chlorofluoroethylene copolymer [P(VDF-TrFE-CFE)] and 1.0005g of solvent DMF, ultrasonically stir and disperse evenly to form a stable Sol, the proportion of the ingredients is composed of: organic PBMA is 20%, polymer is 80%;
b.将步骤a制备的溶胶在模具上80℃流延成膜,干燥18h;再经过自然冷却、120℃退火8h,即制备出PBMA/ P(VDF-TrFE-CFE)复合介电薄膜。在1000Hz时,介电常数能达到34,介电损耗为1.6,击穿场强为203 MV/m。 b. The sol prepared in step a was cast on a mold at 80°C to form a film, dried for 18 hours; then cooled naturally and annealed at 120°C for 8 hours to prepare a PBMA/P(VDF-TrFE-CFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 34, the dielectric loss is 1.6, and the breakdown field strength is 203 MV/m.
实施例7: Embodiment 7:
a.将0.0300g有机PBMA,0.1000g聚偏氟乙烯-三氟乙烯-氯氟乙烯共聚物[P(VDF-TrFE-CFE)]和1.0005g溶剂DMF混合后,超声搅拌分散均匀,形成稳定的溶胶,该配料比组成为:有机PBMA为30%,聚合物为70%; a. After mixing 0.0300g of organic PBMA, 0.1000g of polyvinylidene fluoride-trifluoroethylene-chlorofluoroethylene copolymer [P(VDF-TrFE-CFE)] and 1.0005g of solvent DMF, ultrasonically stir and disperse evenly to form a stable Sol, the proportion of the ingredients consists of: organic PBMA is 30%, polymer is 70%;
b.将步骤a制备的溶胶在模具上80℃流延成膜,干燥18h;再经过自然冷却、120℃退火8h,即制备出PBMA/ P(VDF-TrFE-CFE)复合介电薄膜。在1000Hz时,介电常数能达到40,介电损耗为1.2,击穿场强为202 MV/m。 b. The sol prepared in step a was cast on a mold at 80°C to form a film, dried for 18 hours; then cooled naturally and annealed at 120°C for 8 hours to prepare a PBMA/P(VDF-TrFE-CFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 40, the dielectric loss is 1.2, and the breakdown field strength is 202 MV/m.
实施例8: Embodiment 8:
这组实施例为对比实施例。0.1000g聚偏氟乙烯-三氟乙烯-氯氟乙烯共聚物[P(VDF-TrFE-CFE)]和1.0005g溶剂DMF混合后,超声搅拌分散均匀,形成稳定的溶胶,将制备的溶胶在模具上80℃流延成膜,干燥18h;再经过自然冷却、120℃退火8h,即制备出P(VDF-TrFE-CFE)复合介电薄膜。在1000Hz时,介电常数能达到35,介电损耗为2.0,击穿场强为294 MV/m。 This set of examples is comparative examples. After mixing 0.1000g polyvinylidene fluoride-trifluoroethylene-chlorofluoroethylene copolymer [P(VDF-TrFE-CFE)] and 1.0005g solvent DMF, the ultrasonic stirring is dispersed evenly to form a stable sol, and the prepared sol is placed in the mold Cast at 80°C to form a film, dry for 18 hours; then cool naturally and anneal at 120°C for 8 hours to prepare a P(VDF-TrFE-CFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 35, the dielectric loss is 2.0, and the breakdown field strength is 294 MV/m.
以上对本发明的实施例作了详细说明,所有实施例在以本发明技术方案为前提下进行实施,给出了详细的实施方式和具体的操作过程,但本发明的保护范围不限于上述的实施例。 The embodiments of the present invention have been described in detail above. All embodiments are implemented on the premise of the technical solutions of the present invention, and detailed implementation methods and specific operating procedures are provided, but the protection scope of the present invention is not limited to the above-mentioned implementation. example.
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